CN108303567A - A kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers - Google Patents
A kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers Download PDFInfo
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- CN108303567A CN108303567A CN201810108278.9A CN201810108278A CN108303567A CN 108303567 A CN108303567 A CN 108303567A CN 201810108278 A CN201810108278 A CN 201810108278A CN 108303567 A CN108303567 A CN 108303567A
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- accelerometer
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- soi wafer
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- differential type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
Abstract
A kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers.It is related to sensor field, and in particular to the preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers.This three axis of three axis accelerometer has respective mass block, and X, Y, Z three axis accelerometer are integrated in single substrate, and X, Y-axis accelerometer are arranged on Z axis accelerometer both sides, and each axial direction uses tablet differential type capacitance.Accelerometer in the present invention uses three mass blocks, and cross jamming is minimum between three axis, and stability is good；X, tri- directions Y, Z are all made of tablet differential type capacitance detecting, and detection accuracy is high；Using soi wafer technique, three axis accelerometer is molded simultaneously, simple for process, is easy to produce in batches, and degree of repeatability is high.As existing monolithic integrated tri-axial acceleration meter, have many advantages, such as it is small, be not necessarily to manual calibration.
Description
Technical field
The present invention relates to sensor fields, and in particular to single chip integrated three mass Ms EMS capacitance differential type 3-axis accelerations
The preparation method of meter.
Background technology
Capacitive accelerometer is exactly the typical microsensor developed with MEMS technology, its purposes is very wide
It is general, it is applied not only to General Aviation, vehicle control, high-speed railway, robot, industrial automation, mine locating, toy, mobile phone etc., and
Also have application in the navigation etc. of missile guidance and aircraft, with the development of science and technology with the further demand in market, in order to more
The comprehensive movable information for understanding object, the research and development of three axis accelerometer have become trend.Currently, the realization of three axis accelerometer
There are three types of mode, respectively hybrid integrated formula, piece is interior, the outer integrated form of piece, single-chip integration formula.
Hybrid integrated formula accelerometer carries out 3 uniaxial accelerometers respectively, then fits together and constitutes three axis
Accelerometer.But the demand that volume is excessive, the shortcomings of manual calibration is needed to can not meet market, nothing are exposed in practical applications
Method is applied in consumer electronics field；
Integrated form uses integrated form, the accelerometer of vertical direction to need a latch assembly and water in horizontal plane in piece, outside piece
Plane is connected, and equally also needs to calibrate with hybrid integrated formula accelerometer, can not volume production；
Three axial directions are made in same lining by single-chip integration formula application MEMS Bulk micro machinings or surface micromachined technique
On bottom, single mass or multimass block structure are generally used, has compared to first two small, manual calibration is not necessarily to, is easy to batch
The features such as quantization production, degree of repeatability is high.
However, using single mass block, i.e. X, Y, Z-direction share a mass block, such as acceleration based on off-set structures
Degree meter, this structure preparation process is simple, but all directions acceleration detection has serious interference, and Z-direction can not
Realize that Differential Detection, detection accuracy be not high.Using two mass blocks, typically plane X, Y-direction is erected respectively with a mass block
Straight Z axis uses torsion bar type difference comb-tooth-type structure, such as seesaw type accelerometer, again such that Z-direction is by X, Y-direction inspection
The signal interference of survey influences the accuracy of detection；More than three mass, usually all it is to use nested structure, prepares complexity,
Equally exist signal interference problem between each other.
Invention content
The present invention provides a kind of preparation method of single chip integrated three mass differential type capacitance accelerometer, this three axis adds
Three axis of speedometer has respective mass block, and X, Y, Z three axis accelerometer are integrated in single substrate, X, the score of Y-axis acceleration
Z axis accelerometer both sides are listed in, each axial direction uses tablet differential type capacitance.
The technical scheme is that:Include the following steps：
1）, on a glass substrate slot；
2）, deposited metal and etched features；
3）, etched portions soi wafer device layer；
4）, further etched features layer；
5）, soi wafer and glass substrate linked together；
6）, soi wafer operation layer is thinned；
7）, on the operation layer of soi wafer deposited metal, then etch figure；
8）, mask etching soi wafer operation layer；
9）, be etched away soi wafer subregion oxygen buried layer；
10）, be made three axis accelerometer.
In method and step 1 provided by the invention）In, the method fluting of wet etching under the action of mask, for level
Axes accelerometers.
In method and step 2 provided by the invention）In, the metal deposited on a glass substrate is as horizontal and vertical acceleration
The metal contact of degree meter；
In method and step 3 provided by the invention）In, etched portions SOI device layer so that the bottom electrode of vertical accelerometer and
There are capacitance gaps between detection quality；
In method and step 4 provided by the invention）In, continue etched features layer, forms the detection matter of vertically and horizontally accelerometer
Amount；
In method and step 5 provided by the invention）In, glass substrate and soi wafer are connected；
In method and step 6 provided by the invention）In, soi wafer is thinned and operates layer thickness；
In method and step 7 provided by the invention）In, the metal deposited on soi wafer operation layer is used for vertical axis accelerometer
Electrode contact；
In method and step 8 provided by the invention）In, mask etching soi wafer operation layer obtains the perforation of vertical axis accelerometer
Top electrodes；
In method and step 9 provided by the invention）In, it is etched away soi wafer subregion oxygen buried layer.
Horizontal accelerometer and horizontal axis accelerometer in three axis accelerometer are located at vertical accelerometer both sides, at
"-" type arranges.
Accelerometer in the present invention uses three mass blocks, and cross jamming is minimum between three axis, and stability is good；X、Y、Z
Three directions are all made of tablet differential type capacitance detecting, and detection accuracy is high；Using soi wafer technique, three axis accelerometer is same
When be molded, it is simple for process, be easy to produce in batches, degree of repeatability is high.As existing monolithic integrated tri-axial acceleration meter, have
It is small, be not necessarily to manual calibration the advantages that.
Description of the drawings
Fig. 1 is the flow process chart of the present invention；
Fig. 2 is step 1）Schematic diagram；
Fig. 3 is step 2）Schematic diagram；
Fig. 4 is step 3）Schematic diagram；
Fig. 5 is step 4）Schematic diagram；
Fig. 6 is step 5）Schematic diagram；
Fig. 7 is step 6）Schematic diagram；
Fig. 8 is step 7）Schematic diagram；
Fig. 9 is step 8）Schematic diagram；
Figure 10 is step 9）Schematic diagram；
Figure 11 is the structural schematic diagram of three axis accelerometer of the present invention；
Figure 12 is the local structural graph of three axis accelerometer of the present invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, to the design of three mass differential type capacitance accelerometer of monolithic list provided in an embodiment of the present invention
It is described in detail with the specific implementation mode of preparation method.
Wherein each layer thickness of attached drawing, shape, size do not reflect actual proportions, simply to illustrate that the content of present invention.
Method, this side are designed and prepared an embodiment of the present invention provides three mass differential type capacitance accelerometer of monolithic
Three axis accelerometer is integrated in monolithic by method, and preparation process is simple.As shown in Figure 1, specifically comprising the following steps：
110 slot on a glass substrate；
120 deposited metals and etched features；
The part of devices layer of 130 etching soi wafers；
140 further etch soi wafer device layer；
150 link together soi wafer and glass substrate；
160 thinned soi wafer operation layers；
170 on the operation layer of soi wafer deposited metal, and etch figure；
180 mask etching operation layers；
190 etching soi wafer subregion oxygen buried layers；
Three axis accelerometer is made.
Since the direction x, y preparation method is the same, only towards different, therefore following only it is in preparation method explanation
The existing directions x y and z directional acceleration meter preparation methods.
Wherein, it is to slot on a glass substrate as Figure 2 shows, using 49% HF solution wet etching glass substrates,
Reach effect as shown in Figure 2,1 indicate is glass substrate, 2 slots formed for wet etching in figure；
The metal that deposits on a glass substrate as shown in Figure 3,3 indicate Cr/Au in figure；
Etching SOI device layer as shown in Figure 4 so that there are 3um electricity between the bottom electrode and detection quality of vertical accelerometer
Hold gap, in figure 4 indicate soi wafers 300um thickness operation layer, 5 indicate the oxygen buried layer of the 2um thickness of soi wafers, 6 expression quilts
The device layer of the 35um thickness of partial etching；
As shown in figure 5, continuing etched features layer, the detection quality of 7 expression horizontal directions in figure, 8 indicate the detection of vertical direction
Quality；
As shown in fig. 6, connecting silicon chip and glass substrate by the way of anode linkage, anode linkage mode temperature is low, without adding
Add intermediate materials, workpiece deformation small；
As shown in fig. 7, the operation layer of soi wafer is thinned to 50um with polishing method, 9 indicate the soi wafer behaviour after being thinned in figure
Make layer；
As shown in figure 8, the deposited metal on SOI operation layers, as the top electrodes of vertical axis accelerometer, 10 be deposition in figure
Metal Cr/Au；
As shown in figure 9, the operation layer of etching soi wafer, forms capacity plate antenna, 11 indicate the flat of vertical direction accelerometer in figure
Plate capacitance, multiple tablets, is detected with calculus of finite differences, excludes the interference of the factors to signal such as environment temperature, humidity, and 12 indicate level side
To capacity plate antenna；
As shown in Figure 10, BHF etches soi wafer part oxygen buried layer, forms capacity plate antenna vertically and horizontally；
Horizontal accelerometer and horizontal axis accelerometer in three axis accelerometer are located at vertical accelerometer both sides, at a word
Type arranges.
As shown in figure 11, the vertical view of monolithic simple substance amount capacitance differential type accelerometer, wherein 13 indicate that Y direction accelerates
The vertical view of meter is spent, 14 indicate Z axis, and 15 indicate X-axis.X and Y-axis accelerometer are located at Z axis accelerometer both sides, at a word
Type arranges, and makes full use of space, connection and reasonable arrangement.
As shown in figure 12, three mass capacitance differential type accelerometer partial, detailed view of monolithic, wherein 16,18 indicate X-direction
Two electrodes, 23,25 indicate two electrodes of Y-direction, and 17,24 indicate X respectively, the mass block of Y-direction, 19,20 and 21 difference
Indicate top electrodes, mass block and the bottom electrode of Z-direction.
In the present invention, the accelerometer in tri- directions X, Y, Z is integrated on single substrate；X, tri- directional accelerations of Y, Z
In respect of respective mass block, all directions independent detection is not interfere with each other；Each axes accelerometers use tablet differential type capacitance
Detection；
X and Y-axis accelerometer are located at Z axis accelerometer both sides, are arranged at "-" type；Using SOI technology, three axis accelerometer is same
When be molded.
Claims (5)
1. a kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers, which is characterized in that packet
Include following steps：
1）, glass substrate top surface slot, be used for horizontal axis accelerometer；
2）, in the top surface deposited metal of glass substrate, the metal for horizontal and vertical accelerometer contacts；
3）, soi wafer from top to bottom successively include device layer, oxygen buried layer and operation layer, etch the device layer of soi wafer；
4）, further etched features layer, form vertical and horizontal accelerometer detection quality；
5）, by soi wafer and glass substrate bonding connection；
6）, the thickness of soi wafer operation layer is thinned；
7）, on the operation layer of soi wafer deposited metal, for vertical axis accelerometer electrode contact；
8）, mask etching soi wafer operation layer, form the perforated top electrode of vertical axis accelerometer；
9）, the oxygen buried layer that is etched away in soi wafer；
10）, be made three axis accelerometer.
2. a kind of preparation of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers according to claim 1
Method, which is characterized in that step 1）In, using HF solution wet etching glass substrates.
3. a kind of preparation of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers according to claim 1
Method, which is characterized in that step 5）In, by the gold on the device layer and glass substrate of soi wafer by the way of anode linkage
Symbolic animal of the birth year connects.
4. a kind of preparation of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers according to claim 1
Method, which is characterized in that step 9）In, soi wafer part oxygen buried layer is etched by BHF, forms vertically and horizontally flat
Plate capacitance.
5. a kind of preparation of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers according to claim 1
Method, which is characterized in that horizontal accelerometer and horizontal axis accelerometer in three axis accelerometer are located at normal acceleration
Both sides are counted, are arranged at "-" type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810108278.9A CN108303567B (en) | 2018-02-02 | 2018-02-02 | Preparation method of three-mass MEMS capacitance differential type triaxial accelerometer integrated by single chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810108278.9A CN108303567B (en) | 2018-02-02 | 2018-02-02 | Preparation method of three-mass MEMS capacitance differential type triaxial accelerometer integrated by single chip |
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| CN108303567A true CN108303567A (en) | 2018-07-20 |
| CN108303567B CN108303567B (en) | 2020-04-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110080744A (en) * | 2019-04-30 | 2019-08-02 | 南京信息工程大学 | Underground detection device and preparation method based on monolithic integrated sensor |
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