CN110824196B - Stress insensitive MEMS capacitive Z-axis accelerometer - Google Patents
Stress insensitive MEMS capacitive Z-axis accelerometer Download PDFInfo
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- CN110824196B CN110824196B CN201911125779.9A CN201911125779A CN110824196B CN 110824196 B CN110824196 B CN 110824196B CN 201911125779 A CN201911125779 A CN 201911125779A CN 110824196 B CN110824196 B CN 110824196B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
Abstract
The invention discloses a MEMS capacitive Z-axis accelerometer insensitive to stress, wherein a sensitive unit comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a supporting beam and a central anchor point; the movable mass block is suspended on a central anchor point through two supporting beams, and the central anchor point is fixed on the substrate; the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass; the substrates at two sides of the central anchor point are provided with fixed tooth anchor points which are symmetrical by using the supporting beams, and fixed comb teeth are arranged on the fixed tooth anchor points; the movable mass block is provided with movable comb teeth towards the fixed tooth anchor point, the movable comb teeth are cooperatively inserted between the fixed comb teeth, and a group of comb tooth capacitors are respectively formed on two sides of the central anchor point. The MEMS capacitive Z-axis accelerometer insensitive to stress has the advantages of good linearity, small temperature drift, good long-term stability, no obvious increase of manufacturing difficulty and the like.
Description
Technical Field
The invention relates to the technical field of silicon micromechanical sensors, in particular to a MEMS capacitive Z-axis accelerometer insensitive to stress.
Background
As an important application field of MEMS technology, silicon micro-accelerometers have been widely used in various fields of inertial measurement with advantages of low cost, small volume, low power consumption, easy integration, high reliability, and the like. The capacitive silicon micro-accelerometer is one of the most developed and most widely applied inertial devices at present due to the excellent characteristics of simple manufacturing process, good repeatability, low drift and the like. With the development of technology, the performance requirement on the MEMS accelerometer is higher and higher, and the influence of external stress and temperature on the performance of the MEMS capacitive accelerometer is more remarkable.
The basic working principle of the capacitive accelerometer is that the inertial force generated by the acceleration to be measured causes the change of the polar plate gap (gap-changing type) or polar plate overlapping area (area-changing type) of the sensitive capacitor, the capacitance change is in proportional relation with the acceleration, and the change of the sensitive capacitor is obtained through a signal processing circuit, so that the acceleration can be obtained.
The gap-changing type capacitance sensing mode mostly adopts a flat capacitance structure, and is characterized by high sensitivity, large nonlinearity and obvious attraction effect. The variable area type capacitance sensing mode mostly adopts a comb tooth capacitance structure, and the comb tooth capacitance consists of movable comb teeth and fixed comb teeth and has the advantages of good linearity, no influence of applied voltage signals and the like.
For a Z-axis (out-of-plane) accelerometer, a variable gap type plate capacitor structure is mostly adopted at present due to the motion mode of the accelerometer. US6935175, US8079262 describe two typical structures, both employing a lower electrode plate fabricated on a substrate and a movable mass plate to form a sensitive capacitor. The deformation of the substrate caused by external stress and temperature change directly causes the deformation of the lower electrode plate, thereby generating the change of the sensitive capacitance and enabling the output to drift.
The design method for realizing Z-axis acceleration detection based on variable area comb tooth capacitance is first proposed by Arjun Selvakumar et al at Michigan university in 1996. US7140250 proposes a Z-axis torsion pendulum accelerometer for differential comb capacitance detection. In both designs, the mass block anchor point and the tooth fixing anchor point are distributed in a scattered manner, and the design cannot well adapt to substrate deformation caused by external stress and temperature change, and output drift caused by sensitive capacitance change is generated.
At present, there are two main means for reducing or inhibiting the influence of external stress and temperature change on the drift of the MEMS capacitive accelerometer: firstly, stress release or isolation design, for example, ZL201410306360.4 describes a stress isolation structure based on a bump supporting layer manufactured by silicon-silicon bonding, CN201510473172 describes a monolithic integrated embedded stress isolation structure, and the stress isolation structure increases the difficulty of manufacturing or packaging a chip and cannot inhibit stress and deformation influence from a sensitive unit source; secondly, a sensitive unit insensitive to stress is designed, CN201510114611.3 introduces a MEMS chip insensitive to packaging stress, and the lower electrode plate of the panel capacitor is subjected to single-point suspension, so that the lower electrode plate is not influenced by substrate deformation.
Disclosure of Invention
The invention aims to:
aiming at the problems, the invention aims to provide the MEMS capacitive Z-axis accelerometer insensitive to stress, which has the advantages of good linearity, small temperature drift, good long-term stability, no obvious increase of manufacturing difficulty and the like.
The technical scheme is as follows:
the MEMS capacitive Z-axis accelerometer insensitive to stress comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a supporting beam and a central anchor point;
the movable mass block is suspended on a central anchor point through two supporting beams, and the central anchor point is fixed on the substrate;
the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass;
the substrates at two sides of the central anchor point are provided with fixed tooth anchor points which are symmetrical by using the supporting beams, and fixed comb teeth are arranged on the fixed tooth anchor points;
the movable mass block is provided with movable comb teeth towards the fixed tooth anchor point, the movable comb teeth are cooperatively inserted between the fixed comb teeth, and a group of comb tooth capacitors are respectively formed on two sides of the central anchor point.
Further, all the tooth fixing anchor points and the central anchor points are intensively arranged in a set anchor region taking the central anchor point as a geometric center, and the area of the anchor region is < < the chip area occupied by the movable mass block.
Further, the two groups of comb tooth capacitors form a pair of differential capacitors, and the comb tooth capacitors are of unequal-height comb tooth structures.
Further, a first height difference is formed between the top of the movable comb teeth and the top of the fixed comb teeth.
Further, a second height difference is formed between the bottom of the movable comb teeth and the bottom of the fixed comb teeth.
Further, the plurality of sensitive units form an array, and the sensitive units are connected by the coupling beam to realize the same-frequency and same-direction rotation.
Further, the number of sensitive units contained in the array is three, four, five or six.
Further, the coupling beam adopts a hinge structure capable of turning and twisting.
Further, the coupling beam is a folding beam.
Further, the coupling beam has an out-of-plane stiffness that is greater than an in-plane stiffness.
The invention has the beneficial effects that:
the MEMS capacitive Z-axis accelerometer insensitive to stress has the advantages of good linearity, small temperature drift, good long-term stability, no obvious increase of manufacturing difficulty and the like.
Drawings
Fig. 1A is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable gap type sensitive capacitor and a schematic diagram of the principle of sensitivity to stress (substrate without deformation).
Fig. 1B is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable gap type sensitive capacitor and a schematic diagram of the principle of the Z-axis accelerometer on stress sensitivity (deformation of a substrate).
Fig. 2A is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable area type sensing capacitor and a schematic diagram of the principle of sensitivity to stress (substrate without deformation).
Fig. 2B is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable area type sensing capacitor and a schematic diagram of the structure and the principle of the sensitivity to stress (deformation of a substrate).
FIG. 3A is an overall schematic diagram of a stress insensitive MEMS capacitive Z-axis accelerometer according to the invention.
Fig. 3B is a cross-sectional view A-A of fig. 3A.
FIG. 4 is a three-dimensional schematic diagram of the unequal height comb capacitance structure of the stress insensitive MEMS capacitive Z-axis accelerometer of the present invention.
Fig. 5 is a schematic diagram of the working principle of the MEMS capacitive Z-axis accelerometer insensitive to stress according to the present invention.
Fig. 6 is a schematic diagram of the principle of the stress-insensitive MEMS capacitive Z-axis accelerometer according to the present invention.
FIG. 7 is a schematic diagram of an array of stress insensitive MEMS capacitive Z-axis accelerometers according to the present invention.
FIG. 8 is a schematic diagram of the stress relief principle of the array form B-B view of the stress insensitive MEMS capacitive Z-axis accelerometer of the invention of FIG. 7.
In the figure, 1 is a sensitive unit, 11 is a substrate, 13 is a movable mass block, 14 is a supporting beam, 15 is a central anchor point, 101a and 101b are lower electrode plates, 16 is a comb tooth capacitor, 16a is a movable comb tooth, 16b is a fixed comb tooth, 16c is a comb tooth arm, 17 is a fixed tooth anchor point, 17a is a left fixed tooth anchor point, 17b is a right fixed tooth anchor point, and 22 is a coupling beam.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
The stress-insensitive MEMS capacitive Z-axis accelerometer is shown in the whole schematic diagram in fig. 3A and 3B, and the sensitive unit 1 comprises a substrate 11, a movable mass block 13, fixed comb teeth 16B, a fixed tooth anchor point 17, a supporting beam 14 and a central anchor point 15. The movable mass 13 is suspended from a central anchor 15 via two support beams 14, the central anchor 15 is fixed on the substrate 11, and the movable mass 13 has poor mass on both sides with the support beams 14 as torsion shafts. The fixed comb 16b includes a comb arm 16c, and is fixed to the substrate via a fixed-teeth anchor 17, and the comb arm 16c is a cantilever structure extending out of the fixed-teeth anchor 17. The tooth-fixing anchor point 17 includes left and right tooth-fixing anchor points 17a, 17b on left and right sides symmetrically arranged next to the center anchor point 15. The movable mass 13 includes movable comb teeth 16a matched with the fixed comb teeth 16b, the movable comb teeth 16a are inserted between the fixed comb teeth 16b, a group of comb tooth capacitors are respectively formed at two sides of the supporting beam 14, and the two groups of comb tooth capacitors form a pair of differential capacitors. The whole sensitive unit is in a single-pivot quasi-suspension structure.
All tooth-fixing anchor points 17 and center anchor points 15 are arranged in a close-up manner in a circular anchor region with the center anchor point 15 as the geometric center, and the area of the circular anchor region is far smaller than the chip area occupied by the movable mass 13.
The movable mass 13 of the Z-axis accelerometer performs out-of-plane swinging motion, and in order to cause differential capacitance to generate differential modulus, an unequal-height comb tooth capacitance structure is adopted, and in combination with the structure shown in fig. 4, the movable comb tooth 16a and the fixed comb tooth 16b are formed, the fixed comb tooth 16b is quasi-suspended on a fixed tooth anchor point 17, and a height difference Top Offset and a height difference Bot Offset are respectively stored at the Top and the bottom of the movable comb tooth 16a and the Top and the bottom of the fixed comb tooth 16b, and the height difference should be larger than the maximum out-of-plane displacement of the movable mass 13 in a normal working range so as to ensure the linearity of the comb tooth capacitance. The unequal-height comb tooth capacitor is manufactured by adopting a deep silicon etching process, and the comb tooth structure with smaller gap is manufactured by adopting a high aspect ratio etching technology, so that the sensitivity of the comb tooth capacitor is improved.
FIG. 5 is a schematic diagram of a stress insensitive MEMS capacitive Z-axis accelerometer, wherein under the action of acceleration perpendicular to the plane of the mass, the mass difference of the movable mass generates an inertia moment causing deflection around the support beam, the deflection angle is proportional to the acceleration to be measured, and inversely proportional to the torsional stiffness of the support beam. The deflection of the movable mass causes the overlapping area of the differential comb capacitance to increase by one and decrease, i.e. the differential comb capacitance to increase by one (">) One decrease ()>）, />、/>Base capacitors of two comb capacitors respectively, < >>For the change of capacitance caused by acceleration to be measuredAmount of conversion.
In fact, except for the change of the sensitive capacitance caused by the acceleration to be measured, the change of the sensitive capacitance caused by any other factors is detected by the signal processing circuit, so that the accuracy of the sensor is reduced. The sensitive capacitance change caused by the environmental factors such as external stress, temperature and the like is most remarkable, and the temperature change can introduce group packaging thermal stress when the materials are thermally mismatched. These stresses are transmitted and eventually manifest themselves as deformations of the MEMS chip, such as warpage, bending, etc. The sensing unit of the accelerometer of the embodiment is placed on the substrate of the MEMS chip. In practice, deformation of the substrate due to external stress and temperature variation inevitably exists.
A MEMS capacitive Z-axis accelerometer that is insensitive to stress, which is different from the typical structure of two existing Z-axis accelerometers. As shown in fig. 1A and 1B, a variable gap type sensitive capacitor is formed by a movable mass block 13 (upper electrode) and lower electrode plates 101A and 101B, wherein the lower electrode plates 101A and 101B are integrally attached to the surface of a substrate 11, are arranged below the movable mass block 13 and are symmetrically distributed on two sides taking a supporting beam as an axis to form a pair of differential capacitors. When the substrate deforms due to external stress or temperature change, the movable mass 13 has completely free mechanical characteristics due to the single-point supporting structure characteristic, namely, the movable mass 13 is not deformed, but the lower electrode plate can follow the deformation of the substrate 11, so that the gap of the sensitive capacitor changes, the gap change depends on the distribution of the lower electrode plate, and the larger the distance L between the lower electrode plate and the torsion shaft (supporting beam) is, the larger the gap change is, and the larger the capacitance change is. Assuming that the degree of bending of the substrate is expressed by the radius of curvature ρ, the capacitance varies. Ideally, the capacitance is varied->Belongs to the common modulus of differential capacitance, in practice the sensitive unit cannot be completely symmetrical, and the signal processing circuit also has common mode leakage, thus the capacitance change +.>Will cause a drift in the output.
As shown in fig. 2A and 2B, another conventional Z-axis accelerometer is shown, a movable mass block 13 is fixed on a substrate 11 through a central anchor point 15, a variable area type sensitive capacitor is formed by movable comb teeth and fixed comb teeth, the fixed comb teeth are arranged on the outer sides of the movable comb teeth, the fixed comb teeth are fixed on the substrate through fixed comb teeth anchor points 17a and 17B, and the fixed comb teeth anchor points and the central anchor points are distributed in a multi-point manner. When the substrate is bent and deformed, the fixed tooth anchor point is displaced along with the substrate, and the displacement is proportional to the quadratic power of the distance L between the fixed tooth anchor point and the central anchor point and inversely proportional to the curvature radius of the substrate, so that the fixed comb teeth deviate from the original position, and the capacitance of the comb teeth changes due to the change of the overlapping areaAn output drift is generated.
Whereas the stress insensitive MEMS capacitive Z-axis accelerometer of the present invention is shown in fig. 6 when the substrate is deformed. The movable mass 13 has completely free mechanical properties due to the structural features of the single point support, i.e. the movable mass is not deformed. The left tooth anchor point 17a and the center anchor point 15 which are arranged next to each other in the circular anchor region fix the displacement of the comb teeth in the out-of-plane (Z-axis) direction assuming that the distance is L' and the radius of curvature of the substrate is ρApproximately->. Because the area of the circular anchor area is far smaller than the area of the chip occupied by the movable mass block, L ' is usually small in design, and compared with the prior proposal in FIG. 2A and FIG. 2B, L ' is small in design '<<L, namely the comb capacitance change introduced by substrate deformation is very small, even when L' is small enough, the influence of the substrate deformation on the comb capacitance overlapping area can be almost ignored, so that the design of the Z-axis accelerometer sensitive unit insensitive to stress is realized.
The MEMS capacitive Z-axis accelerometer shown in fig. 3A and 3B, which is insensitive to stress, can further improve performance in an array form to adapt to the application requirements of high sensitivity and low noise. The design of centering anchor point and tooth fixing anchor point are arranged in the circular anchor area in a concentrated manner, and although the problem of stress sensitivity is solved well, the length of the fixed comb teeth extending out of the tooth fixing anchor point in the X-axis direction is limited, and the structural stability of the fixed comb teeth can be reduced due to the fact that the length of the fixed comb teeth extending out of the circular anchor area is too long, so that the sensitivity of comb tooth capacitance is limited to a certain extent.
The array of fig. 7 is used in an embodiment to improve the capacitance sensitivity. A plurality of identical stress insensitive MEMS capacitive Z-axis accelerometer sensing units 1 are arranged in an array along the Y-axis, with the movable masses of adjacent sensing units 1 being connected by two coupling beams 22 symmetrically distributed about the support beam. Coupling beam 22 has the characteristics of relatively high out-of-plane (Z-axis) stiffness, relatively low in-plane (Y-axis) stiffness, and being torsionally stiff along the X-axis, typically a folded beam as shown in fig. 7. The characteristic of relatively large out-of-plane rigidity is used for coupling the motion of each sensitive unit, so that the plurality of sensitive units 1 integrally rotate around the Y axis in the same frequency and the same direction, and the capacitance sensitivity and the effective mass are multiplied. After the plurality of sensitive units 1 are arrayed, central anchor points of the sensitive units 1 are distributed along the Y axis, the distance is relatively large, the deformation of the substrate 11 can enable all anchor points to generate displacement, so that stress is generated on all movable mass blocks, however, the rigidity in the plane (Y axis) of the coupling beam 22 is relatively small, and the characteristic of torsion along the X axis can almost completely release the stress on the movable mass blocks, so that the influence of external stress and thermal stress on the rigidity and mechanical sensitivity of the support beam of the accelerometer is avoided to the greatest extent. At this point, the comb capacitance of each sensitive unit 1 in the array is still insensitive to substrate deformation.
The number of the arrays of the sensing units 1 may be three, four, five, six, etc., and is specifically determined by design, and five sensing unit arrays are used in the embodiment. Fig. 8 is a simulation of group package stress in the form of an array of multiple sensitive cells, from which it can be seen that the coupling beams 22 release the stress on the movable mass in bending and torsional deformations, the stress on the whole movable mass and the support beams being kept at a very low level.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (7)
1. The MEMS capacitive Z-axis accelerometer insensitive to stress is characterized in that a sensitive unit comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a supporting beam and a central anchor point;
the movable mass block is suspended on a central anchor point through two supporting beams, and the central anchor point is fixed on the substrate;
the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass;
the substrates at two sides of the central anchor point are provided with fixed tooth anchor points which are symmetrical by using the supporting beams, and fixed comb teeth are arranged on the fixed tooth anchor points;
the movable mass block is provided with movable comb teeth towards the fixed tooth anchor point, the movable comb teeth are cooperatively inserted between the fixed comb teeth, and a group of comb tooth capacitors are respectively formed at two sides of the central anchor point;
the two groups of comb tooth capacitors form a pair of differential capacitors, and the comb tooth capacitors are of unequal-height comb tooth structures;
the top of the movable comb teeth and the top of the fixed comb teeth are provided with a first height difference;
the bottom of the movable comb teeth and the bottom of the fixed comb teeth are provided with a second height difference.
2. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 1, wherein all tooth anchor points and center anchor points are centrally disposed within a set anchor region centered on the center anchor point, the area of the anchor region < < the chip area occupied by the movable mass.
3. The MEMS capacitive Z-axis accelerometer insensitive to stress according to claim 2, wherein an array is formed by a plurality of the sensing units, and the sensing units are connected by a coupling beam to realize the same-frequency and same-direction rotation.
4. A MEMS capacitive Z-axis accelerometer that is insensitive to stress according to claim 3 wherein the number of sensitive cells contained in the array is three, four, five or six.
5. A MEMS capacitive Z-axis accelerometer that is insensitive to stress according to claim 3 wherein the coupling beam employs a hinge structure that can twist in a flip.
6. A MEMS capacitive Z-axis accelerometer that is insensitive to stress according to claim 3, wherein the coupling beam is a folded beam.
7. A MEMS capacitive Z-axis accelerometer that is insensitive to stress according to claim 3 wherein the coupling beam has an out-of-plane stiffness that is greater than an in-plane stiffness.
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| CN111551761B (en) * | 2020-04-03 | 2021-11-30 | 四川知微传感技术有限公司 | Low-noise MEMS accelerometer |
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| CN114509578A (en) * | 2020-10-29 | 2022-05-17 | 华为技术有限公司 | Accelerometer, inertial measurement unit IMU and electronic equipment |
| CN113419081B (en) * | 2021-08-24 | 2021-11-23 | 杭州麦新敏微科技有限责任公司 | MEMS accelerometer and signal processing method thereof |
| CN114280331A (en) * | 2021-12-16 | 2022-04-05 | 宁波奥拉半导体有限公司 | Z-axis accelerometer |
| CN114383762B (en) * | 2022-01-11 | 2022-12-27 | 西安交通大学 | MEMS capacitive micro-force sensor based on multi-comb array and decoupling test method |
| CN114814293B (en) * | 2022-06-29 | 2022-09-09 | 成都华托微纳智能传感科技有限公司 | MEMS accelerometer with sawtooth-shaped comb tooth structure |
| CN115356507A (en) * | 2022-10-14 | 2022-11-18 | 成都本原聚能科技有限公司 | Three-axis accelerometer |
| CN116338246B (en) * | 2023-03-16 | 2024-02-20 | 瑞声开泰科技(武汉)有限公司 | Accelerometer |
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| CN105911309A (en) * | 2016-06-24 | 2016-08-31 | 东南大学 | Single anchor supporting-type double axis silicon micro resonant accelerometer |
| CN108226235A (en) * | 2016-12-21 | 2018-06-29 | 中国矿业大学 | A kind of capacitive MEMS gas sensor |
| CN207832823U (en) * | 2018-01-26 | 2018-09-07 | 成都信息工程大学 | A kind of big mass block comb capacitance type 3-axis acceleration sensor |
| CN109946481A (en) * | 2019-04-02 | 2019-06-28 | 四川知微传感技术有限公司 | A kind of MEMS closed-loop accelerometer based on rigidity compensation |
| CN110308308A (en) * | 2019-06-27 | 2019-10-08 | 深迪半导体(上海)有限公司 | Flatly moving type accelerometer in a kind of face with compensating electrode |
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