CN107085125A - A kind of capacitance acceleration transducer for becoming spacing and preparation method thereof - Google Patents
A kind of capacitance acceleration transducer for becoming spacing and preparation method thereof Download PDFInfo
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- CN107085125A CN107085125A CN201710293169.4A CN201710293169A CN107085125A CN 107085125 A CN107085125 A CN 107085125A CN 201710293169 A CN201710293169 A CN 201710293169A CN 107085125 A CN107085125 A CN 107085125A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
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- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of capacitance acceleration transducer for becoming spacing and preparation method thereof, the capacitance acceleration transducer of specifically a kind of change spacing based on MEMS micro-processing technology, changes to cause the change of equivalent capacity to determine acceleration using gap of the inertial mass in the presence of outer acceleration between detecting electrode.The invention and ic process compatibility, can have higher sensitivity with integrated signal process circuit, affected by environment small.By carrying out ion implanting formation PN junction in silicon substrate different parts, using the unilateral conduction of PN junction, realize that the dynamic substrate between tooth and fixed tooth of acceleration transducer sensitization capacitance structure is electrically isolated, prevent bi directional conductibility, manufacture craft is simple, can reduce cost, stability is good.
Description
Technical field
The present invention relates to a kind of capacitance acceleration transducer for becoming spacing and preparation method thereof, especially one kind is based on
Capacitance acceleration transducer of change spacing of MEMS micro-processing technology and preparation method thereof, belongs to micro-electronic mechanical system technique
Field.
Background technology
Acceleration is the important parameter of reaction system external environment and own situation, to environmental monitoring, the shape of system itself
State identification has a major impact, therefore quick and precisely measures acceleration and have important practical significance.It is well known that utilizing machinery
Although the accelerometer of processing can also measure acceleration, these mechanical devices have simultaneously because easy to wear with moving parts
There is volume big, price height is, it is necessary to the shortcomings of often safeguarding.Minitype inertial based on MEMS (microelectromechanical systems) process technology
Sensor has small volume, and price is low, the characteristics of good product consistency, is the focus of inertial sensor research in recent years.
The type of acceleration transducer has pressure resistance type, piezoelectric type and condenser type etc. a variety of, wherein, based on capacitance acceleration
The measurement of sensor has proven to a kind of acceleration measurement method based on simple and reliable principle.Capacitance acceleration is passed
Sensor has measurement accuracy high, and output is stable, low in energy consumption, the advantages of temperature drift is small.Sensor-based a pair of capacitance measurement
Overlapping area change between two surfaces of capacitance electrode.Electric capacity between the two surfaces, that is, store the capacitance of electric charge,
Depending on surface area and its spacing.Capacitance measurement can even be used in the measurement range of at a fairly low acceleration magnitude.It is how real
It is existing it is a kind of can the acceleration transducer mutually compatible with integrated circuit technology be one of its study hotspot.
The content of the invention
Purpose：To solve the deficiencies in the prior art, there is provided a kind of electricity of the change spacing of based single crystal silicon epitaxy envelope chamber technique
Appearance formula acceleration transducer and preparation method thereof, device manufacturing process is simple, with compatible with integrated circuit, in same silicon lining
It can be achieved to be electrically isolated on bottom, low cost, the features such as sensitivity is big.
Technical scheme：In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of capacitance acceleration transducer for becoming spacing, it is characterised in that：Using monocrystalline silicon as substrate, pass through monocrystalline silicon
Extension envelope chamber technique formation seal cavity structure；Ion is injected separately on seal cavity top and surrounding, acceleration sensing is realized
The dynamic substrate between tooth and fixed tooth of device sensitization capacitance structure is electrically isolated；By sputtering, photoetching, corrosion and splash-proofing sputtering metal technique,
Metal pad and lead are provided with monocrystalline substrate；Total is discharged by photoetching and ICP silicon etchings, suspension monocrystalline is formed
Siliceous gauge block, when sensor does acceleration or deceleration motion, suspension monocrystalline silicon mass can move freely.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：In monocrystalline substrate
Surface grows silica and silicon nitride successively, and in silicon nitride and silicon oxide surface photoetching, that corrosion forms acceleration transducer is quick
Feel the contact hole that capacitance structure moves tooth and fixed tooth pad.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：The lead and weldering
The material of disk is Al.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：Injected on substrate
Ion, forms N-type semiconductor and P-type semiconductor；Pass through ion implantation technology so that acceleration transducer sensitization capacitance structure is moved
Tooth is different with silicon substrate type from the semiconductor type of fixed tooth.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：If silicon substrate is P
Type semiconductor, then make it that the semiconductor type that acceleration transducer sensitization capacitance structure moves tooth and fixed tooth is N by ion implanting
Type semiconductor；If conversely, silicon substrate is N-type semiconductor, causing acceleration transducer sensitization capacitance structure by ion implanting
The semiconductor type for moving tooth and fixed tooth is P-type semiconductor.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：In silicon substrate with adding
Apply reverse bias voltage on the PN junction of velocity sensor sensitization capacitance structure formation, so that silicon substrate, acceleration sensing
The dynamic substrate that formed between tooth and fixed tooth three of device sensitization capacitance structure is electrically isolated.
Preferably, the capacitance acceleration transducer of described change spacing, it is characterised in that：The material of the substrate
Matter is p type single crystal silicon.
The preparation method of the capacitance acceleration transducer of above-mentioned change spacing, it is characterised in that：Comprise the following steps：
Step 1), using p type single crystal silicon as substrate, by anisotropic rie technique in monocrystalline substrate
1-10 μm of shallow slot of upper etching；
Step 2), while being protected to the shallow groove sidewall of monocrystalline substrate, to monocrystalline substrate carry out isotropism
Corrosion, is that ensuing epitaxial monocrystalline silicon envelope chamber technique is prepared；
Step 3), epitaxial growth monocrystalline silicon, be internally formed seal cavity in monocrystalline substrate；
Step 4), make by CMP process monocrystalline substrate surface smooth, be ensuing photoetching and ion
Injection is prepared；
Step 5), carry out ion implanting respectively so that acceleration transducer sensitization capacitance structure moves partly leading for tooth and fixed tooth
Body type is different from silicon substrate type；If silicon substrate is P-type semiconductor, cause acceleration transducer sensitive by ion implanting
It is N-type semiconductor that capacitance structure, which moves tooth and the semiconductor type of fixed tooth,；If conversely, silicon substrate is N-type semiconductor, passing through ion
Injection causes acceleration transducer sensitization capacitance structure moves tooth and the semiconductor type of fixed tooth to be P-type semiconductor, to realize acceleration
The dynamic substrate between tooth and fixed tooth of sensor sensing capacitance structure is spent to be electrically isolated；
Step 6), surface growing silicon oxide and silicon nitride successively on a monocrystaline silicon substrate；
Step 7), in silicon nitride and silicon oxide surface photoetching, corrosion, form acceleration transducer sensitization capacitance structure and move tooth
With the contact hole of fixed tooth；
Step 8), in silicon nitride surface splash-proofing sputtering metal layer Al, and photoetching corrosion formation electrical connecting wire and pad；
Step 9), total discharged by photoetching and ICP silicon etchings, form acceleration transducer sensitization capacitance structure,
Produce.
The preparation method of the capacitance acceleration transducer of described change spacing, the height of seal cavity is 3-7 μm, optimal
Elect 5 μm as.
Beneficial effect：Capacitance acceleration transducer of change spacing that the present invention is provided and preparation method thereof, sets up close
On the monocrystalline silicon cavity body structure of envelope, device architecture is simple, and the seal cavity structure passes through monocrystalline silicon epitaxial growth technology shape
Into.With respect to the FBAR structures of bonding or surface sacrificial process formation, set up in monocrystalline silicon epitaxy envelope chamber technique
FBAR structures have manufacturing process simple, device satisfactory mechanical property, the features such as stability is high.And using front sputtering and
Etching technics can just complete the processing of FBAR devices, and processing step is simple and reliable.Whole process is not interfering with silicon chip just
The existing cmos circuit in face, so becoming the capacitance acceleration transducer of spacing can be carried out using post-CMOS processing technologys
Processing, so as to further realize that the monolithic of chip is intelligent, can also reduce the size and cost of chip.
Brief description of the drawings
Fig. 1 is the front view of structure of the present invention；
Fig. 2 is the top view of structure of the present invention；
Fig. 3 is the schematic flow sheet that the present invention makes；
In figure：Substrate 1, silica 2, silicon nitride 3, N-type semiconductor 4, metal Al 5, seal cavity 6, wire 7, pad 8,
Anchor area 9, fixed tooth 10, dynamic tooth 11, cantilever beam 12.
Embodiment
The present invention is illustrated with reference to example：
Embodiment 1：
As shown in Figure 1 to Figure 3, the capacitance acceleration transducer for the change spacing that the present invention is provided, by following steps system
It is standby：
A, using p type single crystal silicon as substrate 1, by anisotropic rie technique in monocrystalline substrate 1
Etch 1-10 μm of shallow slot；
B, while being protected to the shallow groove sidewall of monocrystalline substrate, to monocrystalline substrate 1 carry out isotropic etch,
Prepared for ensuing epitaxial monocrystalline silicon envelope chamber technique；
C, epitaxial growth monocrystalline silicon, seal cavity is internally formed in monocrystalline substrate, and cavity is high about 5 μm；
D, by chemically-mechanicapolish polishing (CMP) technique make monocrystalline substrate surface smooth, be ensuing photoetching and ion
Injection is prepared；
E, progress phosphonium ion injection technology so that region 4 is that the silicon substrate beyond N-type semiconductor, region 4 is still p-type half
Conductor, to realize that the dynamic substrate between tooth and fixed tooth of acceleration transducer sensitization capacitance structure is electrically isolated；
F, in the upper surface of monocrystalline substrate 1 successively growing silicon oxide 2 and silicon nitride 3；
G, silicon nitride 2 and the photomask surface of silica 3, corrosion formed acceleration transducer sensitization capacitance structure move tooth with it is fixed
The contact hole of tooth；
H, in silicon nitride surface splash-proofing sputtering metal layer Al 5, and photoetching corrosion formation electrical connecting wire 7 and pad 8；
I, pass through photoetching and ICP silicon etchings and discharge total, form acceleration transducer sensitization capacitance structure, main bag
Kuo Mao areas 9, fixed tooth 10, dynamic tooth 11 and cantilever beam 12.
According to capacitance equationDynamic tooth 11 is connected with cantilever beam 12, is supported by anchor area 9 and is fixed on silicon lining
On bottom, when sensor is moved by acceleration or deceleration degree, cantilever beam 12 and dynamic tooth 11 thereon are straight due to inertia and fixed tooth 10
Practice midwifery raw relative motion, it causes the electric capacity overlapping area between fixed tooth 10 and dynamic tooth 11 to change, so that its capacitance
Generation respective change.By detecting that the size away from capacitance between fixed tooth 10 and dynamic tooth 11 can derive that sensor local environment adds
The size of velocity amplitude.
Capacitance acceleration transducer of change spacing that the present invention is provided and preparation method thereof, device manufacturing process is simple,
With compatible with integrated circuit, it can be achieved to be electrically isolated on same silicon substrate, low cost, the features such as sensitivity is big.Using
MEMS micro-processing technology, forms cavity, on seal cavity top and four by monocrystalline silicon epitaxy seal cavity technique in silicon chip
Week is injected separately into ion, realizes that the dynamic substrate between tooth and fixed tooth of acceleration transducer sensitization capacitance structure is electrically isolated；By splashing
Penetrate, photoetching and etching process are provided with metal pad and lead on a monocrystaline silicon substrate；Discharged by photoetching and ICP silicon etchings
Total, forms suspended matter gauge block, it is moved freely in acceleration or retarded motion.
The present invention is disclosed with preferred embodiment above, so it is not intended to limiting the invention, all use equivalent substitutions
Or the technical scheme that equivalent transformation mode is obtained, it is within the scope of the present invention.
Claims (9)
1. a kind of capacitance acceleration transducer for becoming spacing, it is characterised in that：Using monocrystalline silicon as substrate, by monocrystalline silicon outside
Prolong envelope chamber technique formation seal cavity structure；Ion is injected separately on seal cavity top and surrounding, acceleration transducer is realized
The dynamic substrate between tooth and fixed tooth of sensitization capacitance structure is electrically isolated；Pass through sputtering, photoetching, corrosion and splash-proofing sputtering metal technique, in list
Metal pad and lead are provided with crystalline silicon substrate；Total is discharged by photoetching and ICP silicon etchings, suspension monocrystalline silicon is formed
Mass, when sensor does acceleration or deceleration motion, suspension monocrystalline silicon mass can move freely.
2. the capacitance acceleration transducer according to claim 1 for becoming spacing, it is characterised in that：Monocrystalline substrate upper table
Face grows silica and silicon nitride successively, and acceleration transducer sensitivity is formed in silicon nitride and silicon oxide surface photoetching, corrosion
Capacitance structure moves the contact hole of tooth and fixed tooth pad.
3. the capacitance acceleration transducer according to claim 1 for becoming spacing, it is characterised in that：The lead and pad
Material be Al.
4. the capacitance acceleration transducer according to claim 1 for becoming spacing, it is characterised in that：Injected on substrate from
Son, forms N-type semiconductor and P-type semiconductor；Pass through ion implantation technology so that acceleration transducer sensitization capacitance structure moves tooth
It is different with silicon substrate type from the semiconductor type of fixed tooth.
5. the capacitance acceleration transducer according to claim 4 for becoming spacing, it is characterised in that：If silicon substrate is p-type
Semiconductor, then make it that the semiconductor type that acceleration transducer sensitization capacitance structure moves tooth and fixed tooth is N-type by ion implanting
Semiconductor；
If conversely, silicon substrate be N-type semiconductor, by ion implanting cause acceleration transducer sensitization capacitance structure move tooth with
The semiconductor type of fixed tooth is P-type semiconductor.
6. the capacitance acceleration transducer according to claim 4 for becoming spacing, it is characterised in that：In silicon substrate with accelerating
Apply reverse bias voltage on the PN junction of degree sensor sensing capacitance structure formation, so that silicon substrate, acceleration transducer
The dynamic substrate that formed between tooth and fixed tooth three of sensitization capacitance structure is electrically isolated.
7. the capacitance acceleration transducer according to claim 1 for becoming spacing, it is characterised in that：The material of the substrate
For p type single crystal silicon.
8. the preparation method of the capacitance acceleration transducer of the change spacing according to claim any one of 1-7, its feature
It is：Comprise the following steps：
Step 1）, using p type single crystal silicon as substrate, carved on a monocrystaline silicon substrate by anisotropic rie technique
Lose 1-10 μm of shallow slot；
Step 2）, while being protected to the shallow groove sidewall of monocrystalline substrate, to monocrystalline substrate carry out isotropic etch,
Prepared for ensuing epitaxial monocrystalline silicon envelope chamber technique；
Step 3）, epitaxial growth monocrystalline silicon, be internally formed seal cavity in monocrystalline substrate；
Step 4）, make by CMP process monocrystalline substrate surface smooth, be ensuing photoetching and ion implanting
Prepare；
Step 5）, carry out ion implanting respectively so that acceleration transducer sensitization capacitance structure moves the semiconductor type of tooth and fixed tooth
Type is different from silicon substrate type；If silicon substrate is P-type semiconductor, acceleration transducer sensitization capacitance is caused by ion implanting
It is N-type semiconductor that structure, which moves tooth and the semiconductor type of fixed tooth,；If conversely, silicon substrate is N-type semiconductor, passing through ion implanting
So that it is P-type semiconductor that acceleration transducer sensitization capacitance structure, which moves tooth and the semiconductor type of fixed tooth, to realize that acceleration is passed
The dynamic substrate between tooth and fixed tooth of sensor sensitization capacitance structure is electrically isolated；
Step 6）, surface growing silicon oxide and silicon nitride successively on a monocrystaline silicon substrate；
Step 7）, in silicon nitride and silicon oxide surface photoetching, corrosion, formed acceleration transducer sensitization capacitance structure move tooth with it is fixed
The contact hole of tooth；
Step 8）, in silicon nitride surface splash-proofing sputtering metal layer Al, and photoetching corrosion formation electrical connecting wire and pad；
Step 9）, total discharged by photoetching and ICP silicon etchings, form acceleration transducer sensitization capacitance structure, produce.
9. the preparation method of the capacitance acceleration transducer according to claim 8 for becoming spacing, it is characterised in that：Sealing
The height of cavity is 3-7 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710293169.4A CN107085125B (en) | 2017-04-28 | 2017-04-28 | A kind of capacitance acceleration transducer and preparation method thereof becoming spacing |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710293169.4A CN107085125B (en) | 2017-04-28 | 2017-04-28 | A kind of capacitance acceleration transducer and preparation method thereof becoming spacing |
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| CN107085125A true CN107085125A (en) | 2017-08-22 |
| CN107085125B CN107085125B (en) | 2019-06-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584310A (en) * | 2020-06-08 | 2020-08-25 | 东南大学 | Reconfigurable drive voltage RF MEMS switch and manufacturing method thereof |
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|---|---|---|---|---|
| US5631422A (en) * | 1995-02-02 | 1997-05-20 | Robert Bosch Gmbh | Sensor comprising multilayer substrate |
| US5747353A (en) * | 1996-04-16 | 1998-05-05 | National Semiconductor Corporation | Method of making surface micro-machined accelerometer using silicon-on-insulator technology |
| CN1605871A (en) * | 2004-10-18 | 2005-04-13 | 北京大学 | Comb capacitance type Z axis accelerometer and preparation method thereof |
| CN106586942A (en) * | 2016-12-27 | 2017-04-26 | 河海大学常州校区 | Microelectronic air pressure sensor and preparation method therefor |
-
2017
- 2017-04-28 CN CN201710293169.4A patent/CN107085125B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5631422A (en) * | 1995-02-02 | 1997-05-20 | Robert Bosch Gmbh | Sensor comprising multilayer substrate |
| US5747353A (en) * | 1996-04-16 | 1998-05-05 | National Semiconductor Corporation | Method of making surface micro-machined accelerometer using silicon-on-insulator technology |
| CN1605871A (en) * | 2004-10-18 | 2005-04-13 | 北京大学 | Comb capacitance type Z axis accelerometer and preparation method thereof |
| CN106586942A (en) * | 2016-12-27 | 2017-04-26 | 河海大学常州校区 | Microelectronic air pressure sensor and preparation method therefor |
Non-Patent Citations (2)
| Title |
|---|
| GANG ZHANG: "Design and Simulation of A CMOS-MEMS Accelerometer", 《CARNEGIE MELLON UNIVERSITY》 * |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584310A (en) * | 2020-06-08 | 2020-08-25 | 东南大学 | Reconfigurable drive voltage RF MEMS switch and manufacturing method thereof |
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