CN106744651A - A kind of condenser type microelectronics baroceptor and preparation method thereof - Google Patents
A kind of condenser type microelectronics baroceptor and preparation method thereof Download PDFInfo
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- CN106744651A CN106744651A CN201710016949.4A CN201710016949A CN106744651A CN 106744651 A CN106744651 A CN 106744651A CN 201710016949 A CN201710016949 A CN 201710016949A CN 106744651 A CN106744651 A CN 106744651A
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- baroceptor
- silicon
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- monocrystalline
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Condenser type microelectronics baroceptor the invention discloses a kind of based single crystal silicon epitaxy envelope chamber technique and preparation method thereof, specifically a kind of capacitive baroceptor based on MEMS micro-processing technology, due to epitaxial monocrystalline silicon technical maturity, the silicon microstructure satisfactory mechanical property that it is formed, the cavity body structure sealing property formed especially with epitaxial monocrystalline silicon is very excellent.The capacitive baroceptor capacitance being consequently formed mainly determines by film body thickness, and by environment temperature and pressure influence.Based on dielectric flex effect principle, capacitive dielectric material dielectric constant value changes with the change of pressure, and obvious monotonicity is presented, and the characteristic can realize the Data Detections such as pressure or air pressure.With reference to MEMS micro-processing technology, the capacitive baroceptor small volume, low in energy consumption, the response time is short.
Description
Technical field
It is especially a kind of micro- based on MEMS the present invention relates to a kind of condenser type microelectronics baroceptor and preparation method thereof
Condenser type microelectronics baroceptor of process technology and preparation method thereof, belongs to technical field of microelectronic mechanical systems.
Background technology
The sensitivity principle of conventional air pressure sensor mainly includes two kinds of resistance sensing and capacitive sensing.The principle of resistance sensing
When being the pressure change of tested gas, film deformation drives thimble, causes the resistance of resistance on film to change.Capacitive sensing
When principle is the pressure change of tested gas, the movable electrode of electric capacity produces the spacing of certain displacement, electric capacity to produce change, leads
The value for sending a telegraph appearance produces change.The major defect of both baroceptors is：（1）For resistance-type baroceptor,
The resistance size of guarantee resistance, shape and the position put first meets the requirements, and secondly ensures to form Wheatstone bridge
Four resistances are essentially equal, so having high requirement to the manufacture craft of such baroceptor；（2）For conventional electricity
For appearance formula baroceptor, due to there is a movable electrode, extraction electrode is relatively difficult, and the encapsulation of sensor later stage is also compared
More difficult, sealing technology requirement is high, causes the Reliability comparotive of such baroceptor poor.
The content of the invention
Purpose：To solve the deficiencies in the prior art, there is provided a kind of condenser type microelectronics baroceptor and preparation method thereof,
Device manufacturing process is simple, with Stability Analysis of Structures, the features such as inexpensive, and has preferable compatibility with CMOS IC techniques.Substantially
Method：Using MEMS micro-processing technology, cavity is formed in silicon chip by monocrystalline silicon epitaxy seal cavity technique, and in sealing
Cavity sensitization capacitance is formed on cavity so as to realize the function of baroceptor.
Technical scheme：In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of condenser type microelectronics baroceptor, it is characterised in that：Including monocrystalline silicon seal cavity and based on upper and lower two electrode
Between apart from variable quantity capacitive baroceptor；
Using monocrystalline silicon as substrate, chamber technique is sealed by monocrystalline silicon epitaxy and forms seal cavity structure；By sputtering, photoetching is rotten
Etching technique, in the capacitor lower electrode of growth successively, sacrifice layer, the Top electrode of annular seal space upper surface；Finally to electricity on capacitor
While pole, capacitor lower electrode are protected, isotropic corrosion is carried out to sacrifice layer, remove sacrifice layer；In monocrystalline silicon
Metal pad and lead are provided with substrate for drawing Top electrode, the bottom electrode of capacitor respectively.
Preferably, the monocrystalline substrate upper surface grows silica and silicon nitride, and photoetching, corrosion successively
Form contact hole.
Preferably, the material of the capacitor lower electrode, Top electrode, lead and pad is metal.
Preferably, the material of the capacitor lower electrode, Top electrode, lead and pad is Al.
Preferably, the material of the sacrifice layer is phosphorosilicate glass.
Preferably, described condenser type microelectronics baroceptor, it is characterised in that：It is close in monocrystalline substrate
Envelope housing depth is 4-6 μm.
The present invention also provides the preparation method of described condenser type microelectronics baroceptor, it is characterised in that：Including with
Lower step：
Step 1）, using n type single crystal silicon as substrate, carved on a monocrystaline silicon substrate by anisotropic rie technique
Erosion shallow slot；
Step 2）, while being protected to the shallow groove sidewall of monocrystalline substrate, isotropic etch is carried out to monocrystalline substrate,
For ensuing epitaxial monocrystalline silicon envelope chamber technique is prepared；
Step 3）, epitaxial growth monocrystalline silicon, be internally formed seal cavity in monocrystalline substrate；
Step 4）, surface growing silicon oxide and silicon nitride successively on a monocrystaline silicon substrate, and photoetching, corrosion form contact hole；
Step 5）, in silicon nitride surface sputter first layer metal, photoetching, corrosion form pad, are electrically interconnected under line and capacitor
Electrode；
Step 6）, sputter sacrificial layer material on silicon nitride and first layer metal, photoetching, corrosion form sacrifice layer；
Step 7）, sputter second layer metal on silicon nitride and sacrifice layer, photoetching, corrosion form pad, line and electricity are electrically interconnected
Container Top electrode, and multiple grid through holes are offered on electrode on the capacitor, sacrificed as between corrosion capacitance device upper/lower electrode
The window of layer；
Step 8）, while being protected to capacitor top electrode, capacitor lower electrode, sacrifice layer is carried out isotropic
Corrosion, exposes the lead and pad of lower capacitor plate.
Beneficial effect：The condenser type microelectronics baroceptor that the present invention is provided, sets up the seal cavity knot in monocrystalline silicon
On the basis of structure, device architecture is simple, and the seal cavity structure is formed by monocrystalline silicon epitaxial growth technology.Relative to logical
The seal cavity structure that bonding or surface sacrificial process are formed is crossed, is set up in the monocrystalline technologic gas of silicon epitaxy seal cavity
Pressure sensor structure has manufacturing process simple, and structural stability is high, the features such as device satisfactory mechanical property.And utilize front
Sputtering and etching technics can just complete the processing to capacitive baroceptor device, and processing technology and step are simple and reliable.
Whole process does not interfere with the existing cmos circuit of front side of silicon wafer, and such as temperature sensor can process work using CMOS
Skill is processed, so as to further realize that the monolithic of chip is intelligent, while reducing the size of chip, reduces chip
Cost.
Brief description of the drawings
Fig. 1 is the schematic flow sheet that the present invention makes；
Fig. 2 is the front view of structure of the present invention；
Fig. 3 is the top view of structure of the present invention；
In figure：Substrate 1, silica 2, silicon nitride 3, capacitor lower electrode 4, sacrifice layer 5, capacitor top electrode 6, seal cavity 7,
Pad 8.
Specific embodiment
The present invention is illustrated with reference to example：
Embodiment 1：
As shown in Figure 1 to Figure 3, the condenser type microelectronics baroceptor that the present invention is provided is prepared by following steps：
（a）Using N-type（100）Monocrystalline silicon is served as a contrast by anisotropic rie RIE techniques as substrate 1 in monocrystalline silicon
1-10 μm of shallow slot is etched on bottom 1；
（b）While being protected to the shallow groove sidewall of monocrystalline substrate 1, isotropic etch is carried out to monocrystalline substrate, be
Ensuing epitaxial monocrystalline silicon envelope chamber technique is prepared；
（c）Epitaxial growth monocrystalline silicon, seal cavity 7 has been internally formed in monocrystalline substrate, and cavity is high about 5 μm；
（d）In the upper surface of monocrystalline substrate 1 successively growing silicon oxide 2 and silicon nitride 3, and photoetching, corrosion form contact hole；
（e）First layer metal Al is sputtered on the surface of silicon nitride 3, photoetching, corrosion form pad 8, are electrically interconnected under line and capacitor
Electrode 4；
（f）Sacrificial layer material is sputtered on silicon nitride 3 and first layer metal（Such as phosphorosilicate glass）, photoetching, corrosion form sacrifice layer
5；
（g）Second layer metal Al is sputtered on silicon nitride 3 and sacrifice layer 5, photoetching, corrosion form pad 8, line and electricity is electrically interconnected
Container Top electrode 6, and multiple grid through holes are offered on electrode 6 on the capacitor, it is used as between corrosion capacitance device upper/lower electrode
The window of sacrifice layer；
（h）While being protected to capacitor top electrode 6, capacitor lower electrode 4, sacrifice layer 5 is carried out isotropic
Corrosion, exposes the lead and pad 8 of lower capacitor plate 4.
Below the present invention is disclosed with preferred embodiment, so it is not intended to limiting the invention, all use equivalents
Or the technical scheme that equivalent transformation mode is obtained, it is within the scope of the present invention.
Claims (7)
1. a kind of condenser type microelectronics baroceptor, it is characterised in that：Including monocrystalline silicon seal cavity and based on upper and lower two electricity
The capacitive baroceptor of anode-cathode distance variable quantity；
Using monocrystalline silicon as substrate, chamber technique is sealed by monocrystalline silicon epitaxy and forms seal cavity structure；By sputtering, photoetching is rotten
Etching technique, in the capacitor lower electrode of growth successively, sacrifice layer, the Top electrode of annular seal space upper surface；Finally to electricity on capacitor
While pole, capacitor lower electrode are protected, isotropic corrosion is carried out to sacrifice layer, remove sacrifice layer；In monocrystalline silicon
Metal pad and lead are provided with substrate for drawing Top electrode, the bottom electrode of capacitor respectively.
2. condenser type microelectronics baroceptor according to claim 1, it is characterised in that：The monocrystalline substrate upper table
Face grows silica and silicon nitride successively, and photoetching, corrosion form contact hole.
3. condenser type microelectronics baroceptor according to claim 1, it is characterised in that：The capacitor lower electrode,
The material of Top electrode, lead and pad is metal.
4. condenser type microelectronics baroceptor according to claim 1, it is characterised in that：The capacitor lower electrode,
The material of Top electrode, lead and pad is Al.
5. condenser type microelectronics baroceptor according to claim 1, it is characterised in that：The material of the sacrifice layer is
Phosphorosilicate glass.
6. condenser type microelectronics baroceptor according to claim 1, it is characterised in that：Sealing in monocrystalline substrate
Housing depth is 4-6 μm.
7. the preparation method of the condenser type microelectronics baroceptor according to claim any one of 1-6, it is characterised in that：
Comprise the following steps：
Step 1）, using n type single crystal silicon as substrate, carved on a monocrystaline silicon substrate by anisotropic rie technique
Erosion shallow slot；
Step 2）, while being protected to the shallow groove sidewall of monocrystalline substrate, isotropic etch is carried out to monocrystalline substrate,
For ensuing epitaxial monocrystalline silicon envelope chamber technique is prepared；
Step 3）, epitaxial growth monocrystalline silicon, be internally formed seal cavity in monocrystalline substrate；
Step 4）, surface growing silicon oxide and silicon nitride successively on a monocrystaline silicon substrate, and photoetching, corrosion form contact hole；
Step 5）, in silicon nitride surface sputter first layer metal, photoetching, corrosion form pad, are electrically interconnected under line and capacitor
Electrode；
Step 6）, sputter sacrificial layer material on silicon nitride and first layer metal, photoetching, corrosion form sacrifice layer；
Step 7）, sputter second layer metal on silicon nitride and sacrifice layer, photoetching, corrosion form pad, line and electricity are electrically interconnected
Container Top electrode, and multiple through holes are offered on electrode on the capacitor, as sacrifice layer between corrosion capacitance device upper/lower electrode
Window；
Step 8）, while being protected to capacitor top electrode, capacitor lower electrode, sacrifice layer is carried out isotropic
Corrosion, exposes the lead and pad of lower capacitor plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710016949.4A CN106744651A (en) | 2017-01-11 | 2017-01-11 | A kind of condenser type microelectronics baroceptor and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342566A (en) * | 2017-08-28 | 2017-11-10 | 江苏昊昱科技咨询有限公司 | A kind of cable testing bridge |
| CN108012416A (en) * | 2017-12-25 | 2018-05-08 | 佛山市车品匠汽车用品有限公司 | A kind of self-powered multifunction flexible circuit board |
| CN109399555A (en) * | 2017-08-18 | 2019-03-01 | 无锡华润上华科技有限公司 | A kind of preparation method of semiconductor devices |
| CN109399553A (en) * | 2017-08-15 | 2019-03-01 | 无锡华润上华科技有限公司 | A kind of preparation method of semiconductor devices |
| CN110006490A (en) * | 2019-04-19 | 2019-07-12 | 河海大学常州校区 | A kind of temperature, pressure integrated sensor and preparation method thereof |
| CN113544484A (en) * | 2019-01-25 | 2021-10-22 | 西医药服务有限公司 | Real-time, non-destructive container closure integrity measurement |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109399553A (en) * | 2017-08-15 | 2019-03-01 | 无锡华润上华科技有限公司 | A kind of preparation method of semiconductor devices |
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| CN110006490A (en) * | 2019-04-19 | 2019-07-12 | 河海大学常州校区 | A kind of temperature, pressure integrated sensor and preparation method thereof |
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Application publication date: 20170531 |