CN103604538B - MEMS pressure sensor chip and its manufacture method based on SOI technology - Google Patents
MEMS pressure sensor chip and its manufacture method based on SOI technology Download PDFInfo
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Abstract
The invention discloses a kind of MEMS pressure sensor and its manufacture method based on SOI technology, suitable for measurement absolute pressure, including monocrystalline substrate, flat type flexible sheet is set on the groove of monocrystalline substrate, flexible sheet edge sets etch pit, flexible sheet constitutes closed cavity with silicon substrate groove, provided with four monocrystalline silicon strain resistors on flexible sheet, between each monocrystalline silicon strain resistor and they are isolated between flexible sheet using dielectric, four strain resistors connect into Wheatstone bridge by plain conductor, convert pressure into voltage output.The present invention has small volume, repeatability and hysteresis are good, sensitivity is high, operating temperature range is wide, manufacturing process and the features such as ic process compatibility.
Description
Technical field
The invention mainly relates to based on SOI（Silicon in dielectric substrate）The MEMS pressure sensor of technology and its manufacturer
Method, belongs to MEMS（MEMS）Field.
Background technology
The use of extensive semiconductor pressure sensor is at present structure of silicon cup diffusion silicon pressure sensor, this sensor
The quick electric bridge of power use p-type monocrystalline silicon strain resistor, elastic membrane be on n-type silicon substrate corrode silicon cup form, between resistance and
Isolate between resistance and elastic membrane by reverse biased pn-junction, when operating temperature is more than 120 DEG C, the aggravation of pn junction leakages makes biography
Sensor characteristic is of serious failure, thus is not suitable for working under the high temperature conditions.If sensor can be improved using medium isolation
Maximum operating temperature reaches more than 200 DEG C, and SOI is that buried layer of silicon dioxide is introduced between top layer silicon and substrate silicon, top layer and lining
It is medium isolation between bottom, therefore, SOI materials are the good materials for making high-temp pressure sensor.
Currently, most SOI high-temp pressure sensors are that SOI top monocrystalline silicon films are made into four monocrystalline silicon strains
Resistance, and strain resistor is linked to be Wheatstone bridge by splash-proofing sputtering metal, afterwards in the list of the appropriate location of four strain resistors of correspondence
The crystalline silicon substrate back side makes structure of silicon cup formation flexible sheet.Due to using structure of silicon cup, sensor bulk is larger, technique and collection
Compatibility is difficult into circuit technology, is unfavorable for integrated.
In order to overcome structure of silicon cup shortcoming, surface micro pressure sensor is developed.This sensor uses two
Silica is sacrifice layer, and polysilicon is flexible sheet, the polysilicon strain resistor of medium isolation, with small volume, operating temperature
Scope is wide and is conducive to integrated advantage with ic process compatibility.But due to using polysilicon strain resistor, sensor
Repeatability and the poor-performing such as sluggishness.
The present invention is under grant of national natural science foundation（Item number 61372019）Complete, it is intended to propose a kind of comprehensive
Close the semiconductor pressure sensors of three aspect advantages such as monocrystalline silicon strain resistor, sacrifice layer cavity body structure and medium isolation
The manufacture method of chip.
The content of the invention
Goal of the invention
The present invention is a kind of MEMS pressure sensor chip and its manufacture method based on SOI technology, it is therefore an objective to improves and passes
Sensor performance, is conducive to integrated, reduction chip area, expands operating temperature range.
Technical scheme
The present invention is achieved through the following technical solutions：
A kind of MEMS pressure sensor chip based on SOI technology, including monocrystalline substrate；It is characterised by：In monocrystalline silicon
Flat type flexible sheet is set on the groove of substrate；Flexible sheet constitutes closed cavity with monocrystalline substrate groove；In elastic membrane
It is provided with above piece between four monocrystalline silicon strain resistors, each monocrystalline silicon strain resistor and monocrystalline silicon strain resistor and elastic membrane
Isolated between piece using oxide layer, four monocrystalline silicon strain resistors connect into Wheatstone bridge by plain conductor, pressure is turned
Change voltage output into；Flexible sheet edge is provided with etch pit.
Flexible sheet and four monocrystalline silicon strain resistors are to use the smart peeling method and MEMS sacrificial layer skill in SOI technology
Art, which is combined, to be fabricated by.
Near vacuum is formed in closed cavity.
Flexible sheet is made up of polysilicon, is shaped as rectangle or circle.
Monocrystalline silicon strain resistor is monocrystalline silicon thin film resistance.
A kind of MEMS pressure sensor chip manufacture method as described above based on SOI technology, it is characterised in that：Technique
Step is as follows：
（1）Wet etching groove is used on a monocrystaline silicon substrate；
（2）Deposited oxide layer makes substrate planarization, and remove groove as sacrifice layer by polishing on a monocrystaline silicon substrate
With the oxide of exterior domain；
（3）Deposit first layer polysilicon is simultaneously annealed, and etches etch pit；
（4）By etch pit, selective wet etching sacrifice layer and drying；
（5）Second layer polysilicon is deposited, seal erosion hole forms flexible sheet；
（6）Using the smart peeling method in SOI technology, will be had been injected into after surface oxidation the monocrystalline silicon piece of hydrogen ion layer with it is upper
The silicon chip contact bonding for being prepared for flexible sheet is stated, process annealing makes the hydrogen ion formation bubble of injection make silicon chip peel off afterwards,
Monocrystalline silicon thin film so between oxide layer and hydrogen ion layer is left on flexible sheet, finally by polishing by this layer of monocrystalline
Silicon film surface is planarized；
（7）Diffusion or ion implantation doping on the monocrystalline silicon thin film of flexible sheet, and by being lithographically formed four monocrystalline
Silicon strain resistor；
（8）Deposit forms oxide layer after monocrystalline silicon strain resistor is made, and carves splash-proofing sputtering metal after fairlead, photolithographic layer shape
Into plain conductor, scribing completes sensor chip manufacture.
Advantage and effect
The invention has the advantages that and beneficial effect：
The invention provides a kind of MEMS pressure sensor chip and its manufacture method based on SOI technology, due to using
Sacrificial layer structure makes sensor easy of integration and minimized；Using monocrystalline silicon diffusion resistance make transducer sensitivity high, repeatability and
Good stability；Senor operating temperature scope is improved using medium isolation.
Brief description of the drawings
Fig. 1 is inventive sensor top view；
Fig. 2 is inventive sensor profile；
Fig. 3 is the profile that the present invention is formed after groove；
Fig. 4 is the profile that the present invention is formed after sacrifice layer planarization；
Fig. 5 is the profile that the present invention is formed after etch pit；
Fig. 6 is that shape of the present invention removes the profile after sacrifice layer；
Fig. 7 is the profile that the present invention is formed after second layer polysilicon and seal cavity；
Fig. 8 is the profile before sliver after bonding technology of the present invention；
Fig. 9 is that the profile before post-passivation is made in strain resistor of the present invention.
Wherein：1. monocrystalline substrate, 2. cavitys, 3. etch pits, 4. flexible sheets, 5. oxide layers, 6. monocrystalline silicon electrostrictive strains
Resistance, 7. plain conductors, 8. monocrystalline silicon pieces, 101. grooves, 102. sacrifice layers, 103. first layer polysilicons, 104. second layer polycrystalline
Silicon, 105. hydrogen ions layer.
Embodiment
The present invention will be described in detail with reference to the accompanying drawings：
The present invention is a kind of MEMS pressure sensor chip based on SOI technology, as shown in Fig. 1-Fig. 9, sensor bag
Include monocrystalline substrate 1；Flat type flexible sheet 4 is set on the groove 101 of monocrystalline substrate 1；Flexible sheet 4 is served as a contrast with monocrystalline silicon
The groove 101 at bottom 1 constitutes closed cavity 2；Provided with four monocrystalline silicon strain resistors 6 on flexible sheet 4, each monocrystalline silicon should
Become between resistance 6 and isolated between monocrystalline silicon strain resistor 6 and flexible sheet 4 using oxide layer 5, four monocrystalline silicon electrostrictive strains
Resistance 6 connects into Wheatstone bridge by plain conductor 7, converts pressure into voltage output；The edge of flexible sheet 4 is provided with corrosion
Hole 3.
Near vacuum is formed in closed cavity 2.
Sensor construction uses polysilicon flexible sheet 4, and flexible sheet 4 is made up of polysilicon, is shaped as rectangle or circle.
Monocrystalline silicon strain resistor 6 is monocrystalline silicon thin film resistance.
Flexible sheet 4 and four monocrystalline silicon strain resistors 6 are to use the smart peeling method and MEMS sacrificial layer in SOI technology
Technology, which is combined, to be fabricated by.
By changing inventive sensor flexible sheet thickness and diaphragm size, the pressure sensing of various ranges can be designed
Device.
A kind of MEMS pressure sensor chip manufacture method as described above based on SOI technology, it is characterised in that：Technique
Step is as follows：
（1）Using wet etching formation step groove 101 in monocrystalline substrate 1；
（2）Deposited oxide makes substrate planarization, and remove as sacrifice layer 102 by polishing in monocrystalline substrate 1
Groove is with the oxide of exterior domain；
（3）Deposit first layer polysilicon 103 is simultaneously annealed, and etch pit 3 is etched after annealing；
（4）By etch pit 3, wet etching sacrifice layer 102 is simultaneously dried；
（5）Second layer polysilicon 104 or mul-tiple layers of polysilicon are deposited, seal erosion hole 3 forms flexible sheet 4；
（6）Using the smart peeling method in SOI technology, the monocrystalline silicon piece 8 of hydrogen ion layer 105 will be had been injected into after surface oxidation
Bonding is contacted with the above-mentioned silicon chip for being prepared for flexible sheet 4, process annealing makes the hydrogen ion formation bubble of injection make silicon chip afterwards
Peel off, the monocrystalline silicon thin film so between oxide layer 5 and hydrogen ion layer 105 has been left on flexible sheet 4, finally by throwing
Light is by this layer of monocrystalline silicon thin film surface planarisation；
（7）Diffusion or ion implantation doping on the monocrystalline silicon thin film of flexible sheet 4, and by being lithographically formed four monocrystalline
Silicon strain resistor 6；
（8）Deposit forms oxide layer 5 after monocrystalline silicon strain resistor 6 is made, and carves splash-proofing sputtering metal after fairlead, photolithographic layer
Plain conductor 7 is formed, scribing completes sensor chip manufacture.
The design principle of the present invention：The present invention primary structure by monocrystalline substrate, flexible sheet, cavity, etch pit and
Monocrystalline silicon strain resistor is constituted.Flexible sheet is made up of polysilicon flexible sheet, and cavity uses surface micromachined technology, i.e.,
Sacrificial layer technology, removes silicon dioxide sacrificial layer by etch pit with hydrofluoric acid and forms, and etch pit, elastic membrane are closed with polysilicon
Piece and monocrystalline substrate constitute closed cavity, are approximately vacuum.Two are respectively set at the edge and center of sensor flexible sheet
It is situated between monocrystalline silicon strain resistor, monocrystalline silicon strain resistor and using oxide between monocrystalline silicon strain resistor and flexible sheet
Matter is isolated, and connects into differential full-bridge, constitutes pressure measurement circuitry, and circuit uses constant pressure source or constant current source power supply.
When pressure is acted on, sensor diaphragm bends, and causes monocrystalline silicon strain resistor to produce piezoresistive effect, differential complete
Bridge output differential voltage signal is corresponding with pressure value.When pressure is in transducer range scope, sensor output is with pressure into line
The magnitude of voltage of sexual intercourse, when pressure, which exceedes range, reaches a certain value, the flexible sheet and substrate contact of sensor, slowing down diaphragm should
Power is with pressure trend, it is ensured that diaphragm constantly splits under big pressure, improves overload capacity.
In order to realize the monocrystalline silicon strain resistor set on polysilicon diaphragm, SOI technology is employed.SOI（Dielectric substrate
On silicon）Buried layer of silicon dioxide is introduced between top layer silicon and substrate silicon and is realized.The method of currently manufactured SOI wafer
Mainly there are two kinds, one is note oxygen isolation method；Two be smart peeling method.Note oxygen isolation method is to use the special O +ion implanted of big line
O +ion implanted into Silicon Wafer, is then carried out high annealing by machine in inert gas, so as to be formed at the top of silicon wafer garden thick
Degree uniform very thin surface silicon layer and buried layer of silicon dioxide.Note oxygen isolation method advantage is the thickness of silicon thin layer and buried layer of silicon dioxide
Accurately control, have the disadvantage, because oxygen injection can cause the destruction to silicon crystal lattice, to cause silicon thin layer defect concentration higher.Intelligence stripping
It is that the hydrogen ion injection of median dose is carried out to the monocrystalline silicon piece after surface oxidation from method, one is formed about in monocrystalline silicon sheet surface
The airflow layer of depthkeeping degree, then monocrystalline silicon piece oxidation aspect contacts bonding with another monocrystalline substrate at low temperature, then carries out
Process annealing makes the silicon wafer of note hydrogen be stripped down from airflow layer position, between simultaneous oxidation layer and oxide layer and airflow layer
Monocrystalline silicon thin film stayed in another monocrystalline substrate, it is last polished to planarize the monocrystalline silicon thin film on surface to obtain
SOI monocrystalline substrates.It the method overcome the shortcoming of note oxygen isolation method.The present invention uses smart peeling method, after surface oxidation
Had been injected into hydrogen ion layer monocrystalline silicon piece be bonded in the monocrystalline substrate containing sacrificial layer structure, process annealing makes injection
Hydrogen ion formation bubble is made after silicon chip stripping, high annealing increase bonding dynamics, is formed after surface planarisation and is contained polysilicon, oxygen
The flexible sheet of three layers of compound and monocrystalline silicon, is then doped and by being lithographically formed four monocrystalline to the monocrystalline silicon of the superiors
Silicon strain resistor.
The internal stress of polysilicon flexible sheet is the important control parameter in surface micromechanical process, and it is to mechanical structure
Performance and influence of crust deformation it is very big, pressure internal stress can make structure sheaf occur flexing, and structure sheaf will likely be made by opening internal stress greatly
Fracture.To ensure that device has good mechanical property, structure sheaf is preferably zero internal stress, and structure sheaf should at least ensured to be small
Interior tensile stress.People have worked out the process of a variety of reduction polysilicon internal stress, and main method is using doping, annealing
Technique.This programme employs annealing process.
When being dried after sacrifice layer corrosion, if taken no action to, due to polysilicon internal stress and surface tension of liquid
Effect can make to adhere to each other between upper and lower surface in cavity, cause component failure.To prevent from sticking, dried after sacrifice layer corrosion
Method can use cool drying method, critical seasoning, liquid bridge cracking process or hydrophobic coating method.
Embodiment 1
The manufacture method of MEMS pressure sensor based on SOI technology, as shown in Fig. 2 ~ Fig. 9, is concretely comprised the following steps：
（1）Isotropic etch agent HNA is used on a monocrystaline silicon substrate（Hydrofluoric acid/nitric acid/acetic acid）Pass through Twi-lithography
And corrosion, stepped groove is formed, as a result as shown in Figure 3；
（2）Silica is deposited as sacrifice layer using PECVD in the monocrystalline substrate for foring stepped groove
101, substrate is recovered smooth by polishing, while eliminating groove with the silica of exterior domain, as a result as shown in Figure 4；
（3）One layer of polysilicon formation first layer polysilicon 103, dry etching formation cavity after annealing are deposited using LPCVD
Etch pit 3, as a result as shown in Figure 5；
（4）Chip is put into hydrofluoric acid solution by etch pit etching away silicon dioxide sacrificial layer, using critical drying
Method, i.e. corrosive liquid gradually use high-pressure liquid CO2Instead of sample is placed in CO afterwards2In critical point, the interface of gas, liquid disappears, then
Silicon chip is dried, as a result as shown in Figure 6；
（5）One layer of polysilicon formation second layer polysilicon 104 is deposited using LPCVD, polysilicon seal erosion hole, shape is realized
Into vacuum closed cavity 2, first layer polysilicon 103 and the two-layer polysilicon of second layer polysilicon 104 constitute flexible sheet, as a result such as
Shown in Fig. 7；
（6）Using the smart peeling method in SOI technology, the monocrystalline silicon piece 8 of hydrogen ion layer 105 will be had been injected into after surface oxidation
Oxide layer 5 contact bonding with the above-mentioned silicon chip for being prepared for flexible sheet 4, afterwards process annealing make injection hydrogen ion formation gas
Pauling silicon chip is peeled off, and the monocrystalline silicon thin film so between oxide layer 5 and hydrogen ion layer 105 has been left on flexible sheet 4, is led to
Polishing is crossed by this layer of monocrystalline silicon thin film surface planarisation, the elastic membrane containing three layers of polysilicon, silica and monocrystalline silicon is formed
Piece, as a result as shown in Figure 8；
（7）Boron doping is carried out by ion implanting or method of diffusion on surface single crystal silicon thin film, four lists are lithographically formed
Crystal silicon strain resistor 6, as a result as shown in Figure 9；
（8）Rear deposited oxide layer 5 is made in monocrystalline silicon strain resistor 6, is realized after carving fairlead by Conventional microelectronic technique
Aluminum metal wire 7, last scribing completes sensor chip manufacture, as a result as shown in Figure 2.
This MEMS pressure sensor chip based on SOI technology of the present invention can be widely used for multichannel pressure in automobile and survey
Pressure measxurement in the field such as amount, environmental Kuznets Curves pressure measxurement and air line, petrochemical industry, electric power.
Claims (5)
1. a kind of manufacture method of the MEMS pressure sensor chip based on SOI technology, the pressure sensor chip includes single
Crystalline silicon substrate（1）；It is characterised by：In monocrystalline substrate（1）Groove on set flat type flexible sheet（4）；Flexible sheet（4）
With monocrystalline substrate（1）Groove constitutes closed cavity（2）；In flexible sheet（4）Above provided with four monocrystalline silicon strain resistors
（6）, each monocrystalline silicon strain resistor（6）Between and monocrystalline silicon strain resistor and flexible sheet（4）Between use oxide layer（5）
Isolation, four monocrystalline silicon strain resistors（6）Pass through plain conductor（7）Wheatstone bridge is connected into, voltage is converted pressure into defeated
Go out；Flexible sheet（4）Edge is provided with etch pit（3）；Described manufacture method, its processing step is as follows：
（1）Wet etching groove is used on a monocrystaline silicon substrate；
（2）Deposited oxide makes substrate planarization, and remove beyond groove as sacrifice layer by polishing on a monocrystaline silicon substrate
The oxide in region；
（3）Deposit first layer polysilicon is simultaneously annealed, and etches etch pit；
（4）By etch pit, selective wet etching sacrifice layer and drying；
（5）Second layer polysilicon is deposited, seal erosion hole forms flexible sheet；
（6）Using the smart peeling method in SOI technology, the monocrystalline silicon piece and above-mentioned system of hydrogen ion layer will be had been injected into after surface oxidation
It is bonded for the silicon chip contact of flexible sheet, process annealing makes the hydrogen ion formation bubble of injection make silicon chip peel off afterwards, so
Monocrystalline silicon thin film between oxide layer and hydrogen ion layer is left on flexible sheet, finally by polishing that this layer of monocrystalline silicon is thin
Film surface planarisation；
（7）Diffusion or ion implantation doping on the monocrystalline silicon thin film of flexible sheet, and should by being lithographically formed four monocrystalline silicon
Become resistance；
（8）Deposit forms oxide layer after monocrystalline silicon strain resistor is made, and carves splash-proofing sputtering metal after fairlead, and photolithographic layer forms gold
Belong to wire, scribing completes sensor chip manufacture.
2. the manufacture method of the MEMS pressure sensor chip according to claim 1 based on SOI technology, its feature exists
In：Flexible sheet（4）With four monocrystalline silicon strain resistors（6）It is to use the smart peeling method and MEMS sacrificial layer in SOI technology
Technology, which is combined, to be fabricated by.
3. the manufacture method of the MEMS pressure sensor chip according to claim 1 based on SOI technology, its feature exists
In：Closed cavity（2）Middle formation near vacuum.
4. the manufacture method of the MEMS pressure sensor chip according to claim 1 based on SOI technology, its feature exists
In：Flexible sheet（4）It is made up of polysilicon, is shaped as rectangle or circle.
5. the manufacture method of the MEMS pressure sensor chip according to claim 1 based on SOI technology, it is characterised in that：It is single
Crystal silicon strain resistor（6）For monocrystalline silicon thin film resistance.
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| CN105084296B (en) * | 2014-04-25 | 2017-02-08 | 无锡华润上华半导体有限公司 | Manufacturing method for MEMS(Micro Electro Mechanical Systems) capacitive pressure transducer |
| CN105384143B (en) * | 2014-09-04 | 2017-05-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and production method thereof, and electronic apparatus |
| CN104330196B (en) * | 2014-11-28 | 2017-02-22 | 杭州士兰集成电路有限公司 | Cavity film piezoresistive pressure sensor and manufacturing method thereof |
| CN105203250B (en) * | 2015-10-21 | 2017-10-10 | 美新半导体（无锡）有限公司 | A kind of hot type pressure sensor |
| CN105486435A (en) * | 2016-01-04 | 2016-04-13 | 沈阳化工大学 | MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof |
| CN106969874B (en) * | 2016-01-14 | 2019-09-13 | 中国科学院上海微系统与信息技术研究所 | The differential pressure sensing arrangement and preparation method thereof of power sensitive film thickness controllable precise |
| CN105738025A (en) * | 2016-03-24 | 2016-07-06 | 东南大学 | Pressure sensor and preparation mehtod |
| DE102016118268A1 (en) * | 2016-09-27 | 2018-03-29 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
| CN106643463B (en) * | 2016-12-19 | 2019-05-14 | 华中科技大学 | A kind of flexibility full-bridge type resistance strain gage |
| DE102017211451B4 (en) * | 2017-07-05 | 2019-03-21 | Robert Bosch Gmbh | Micromechanical sensor device and corresponding manufacturing method |
| EP3671155B1 (en) | 2017-09-20 | 2021-10-20 | Asahi Kasei Kabushiki Kaisha | Surface stress sensor, hollow structural element, and method for manufacturing same |
| CN108121976A (en) * | 2018-01-08 | 2018-06-05 | 杭州士兰微电子股份有限公司 | Closed cavity structure and its manufacturing method and ultrasonic fingerprint sensor |
| CN108147360A (en) * | 2018-01-08 | 2018-06-12 | 杭州士兰微电子股份有限公司 | MEMS structure, MEMS component and its manufacturing method |
| CN108862186B (en) * | 2018-07-13 | 2021-07-06 | 河南汇纳科技有限公司 | Multi-sensor cooperative manufacturing process flow |
| CN109231154B (en) * | 2018-08-27 | 2024-03-15 | 深圳市兰丰科技有限公司 | Silicon-glass sealed black silicon surface infrared light source chip and preparation method thereof |
| CN112067189B (en) * | 2020-11-10 | 2021-09-21 | 南京高华科技股份有限公司 | Pressure sensor with peripheral medium isolation cup structure and preparation method thereof |
| CN112903149A (en) * | 2021-01-22 | 2021-06-04 | 上海芯物科技有限公司 | Pressure sensor and manufacturing method thereof |
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| EP1860418A1 (en) * | 2006-05-23 | 2007-11-28 | Sensirion AG | A method for fabricating a pressure sensor using SOI wafers |
| CN101551284B (en) * | 2009-04-22 | 2011-07-27 | 江苏英特神斯科技有限公司 | Pressure sensor based on Si-Si direct bonding and manufacturing method thereof |
| CN201653605U (en) * | 2010-04-09 | 2010-11-24 | 无锡芯感智半导体有限公司 | Silicon-bonding based pressure sensor |
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