CN206828092U - A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms - Google Patents
A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms Download PDFInfo
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- CN206828092U CN206828092U CN201720459220.XU CN201720459220U CN206828092U CN 206828092 U CN206828092 U CN 206828092U CN 201720459220 U CN201720459220 U CN 201720459220U CN 206828092 U CN206828092 U CN 206828092U
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Abstract
The utility model discloses a kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms.Including glass substrate, n-type single-crystal silicon element main body, separation layer, protective layer；The outer rim of n-type single-crystal silicon element main body is supported on the top of glass substrate, and the middle part of n-type single-crystal silicon element main body is engraved structure, makes to form closed cavity therebetween；The top wall surface of closed cavity is provided with diaphragm pressure-sensitive structure；Diaphragm pressure-sensitive structure is divided into flat-die layer and Liang Mo mechanisms layer；Liang Mo mechanisms layer is made up of matrix pattern resonance beam and peninsula resonance beam, and Liang Mo mechanisms have the advantages that the linearity is good, high sensitivity.Piezo-resistance uses single crystal silicon material, while separation layer is provided between pressure sensitive film and piezo-resistance, further increases sensitivity and temperature characterisitic, the defects of overcoming in the prior art because temperature is too high, and cause sensor failure.This sensor preparation technology is simple and easy to do, cost is cheap, being easily integrated and miniaturization.
Description
Technical field
It the utility model is related to pressure sensor, more particularly to a kind of pressure sensor for micro electro-mechanical system core of Liang Mo mechanisms
Piece.
Background technology
MEMS (MEMS) pressure sensor is broadly divided into condenser type and resistance-type, condenser type due to complex process,
Cost is high.Present MEMS pressure sensor is mainly used to silicon piezoresistance type, and piezoresistive transducer has small volume, and reliability is high, into
This is low, the characteristics of being adapted to produce in batches.
The resistance chip of MEMS pressure sensor is the piezoresistive effect according to Semiconducting Silicon Materials.Semiconductor silicon is diffused into
On substrate, Wheatstone bridge is constituted, piezo-resistance when mechanical stress by, by Wheatstone bridge, converting pressure into electricity
Pressure output.Sensor voltage-sensitive bridge uses p-type diffusion resistance, elastic membrane n-type, reverse-biased p-n junction is leaned between resistance and elastic membrane
Isolation, when operating temperature is more than 125 DEG C, the aggravation of p-n junction leakage current, make sensor characteristics of serious failure.Piezo-resistance is commonly used
It is monocrystalline silicon or polycrystalline silicon material, because High Temperature Polysilicon Pressure Sensor using DOPOS doped polycrystalline silicon does strain resistor, and it is more
Crystal silicon has the longrange disorder in structure so that and the piezoresistance coefficient of polysilicon will be significantly less than the piezoresistance coefficient of monocrystalline silicon, because
And the sensitivity of polysilicon resistance film is less than the sensitivity of monocrystalline silicon resistive film.
Generally, the diaphragm of micropressure sensor is divided into two kinds of flat-die mechanism and Dao Mo mechanisms by mechanism.
For flat-die mechanism, if sensitivity can be improved by reducing diaphragm thickness；However, its amount of deflection is relative to diaphragm thickness
It is significantly increased.
The amount of deflection of sensor can be greatly reduced using Dao Mo mechanisms, the defeated of sensitivity is compensated by increasing diaphragm size
Go out, but size sensor also accordingly increases.
For the deficiency of both the above diaphragm assembly, a variety of beam film mechanism patterns are suggested, but they are also much deposited
The problem of：Sensor bulk is small and pressure sensitive film is thin, and the linearity is slightly worse, and good temp characteristic still answer by remolding sensitivity bottom, diaphragm
Power is big but amount of deflection increases.
Silicon piezoresistive materials pressure sensor processing method is broadly divided into surface micromachined and bulk silicon micromachining technology
Two kinds.Surface micromachined technical costs is low, is easily integrated and minimizes.Bulk silicon micro mechanic process technology feature be technique into
It is ripe, but it is not easy integration and miniaturization.
The content of the invention
The shortcomings that the purpose of this utility model is to overcome above-mentioned prior art and deficiency, there is provided a kind of Liang Mo mechanisms it is micro-
Mechatronic Systems pressure sensor chip.
The utility model is achieved through the following technical solutions：
A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms, including such as lower component：
Glass substrate 1；
N-type single-crystal silicon element main body 2；
Separation layer 5；
Protective layer 6；
The outer rim of the n-type single-crystal silicon element main body 2 is supported on the top of glass substrate 1, n-type single-crystal silicon element main body 2
Middle part be engraved structure 3, make to form closed cavity therebetween；The top wall surface 4 of closed cavity is provided with diaphragm pressure-sensitive structure；
The separation layer 5 is arranged between n-type single-crystal silicon element main body 2 and diaphragm pressure-sensitive structure；
The protective layer 6 is arranged on the top of separation layer 5；
The diaphragm pressure-sensitive structure is provided with four p-type monocrystalline silicon piezo-resistances 7, four p-type monocrystalline silicon piezo-resistances 7
Wheatstone bridge is connected into by plain conductor, it is defeated for the mechanical pressure for being applied to its strain region to be converted into voltage data
Go out.
The diaphragm pressure-sensitive structure is divided into flat-die layer and Liang Mo mechanisms layer；
Liang Mo mechanisms layer is made up of matrix pattern resonance beam 11 and peninsula resonance beam 10；
The four p-type monocrystalline silicon piezo-resistance 7 is distributed in peninsula resonance beam 10.
The lead district is distributed in the periphery of Liang Mo mechanisms layer, and it is made up of five metal wiring terminals 9；
By the combination of this five metal wiring terminals 9 and metal lead wire 8, p-type monocrystalline silicon piezo-resistance 7 is connected into favour
Stone electric bridge.
The section shape of the engraved structure 3 is in isosceles trapezoidal structure.
The preparation method of the pressure sensor for micro electro-mechanical system chip of the utility model Liang Mo mechanisms is as follows：
Oxidation processes are carried out to n-type single-crystal silicon element main body 2；
Then p-type monocrystalline silicon piezo-resistance 7 is prepared with the method for photoetching corrosion and ion implanting；
The protective mulch 6 in p-type monocrystalline silicon piezo-resistance 7；
Then deep silicon etching is carried out to the back side of n-type single-crystal silicon element main body 2, to obtain engraved structure 3；
Then the lead district of p-type monocrystalline silicon piezo-resistance 7 is gone out to the front photoetching corrosion of n-type single-crystal silicon element main body 2；
Again by the good metal lead wire 8 of method cloth of metal sputtering, and Liang Mo mechanisms layer is performed etching；
N-type single-crystal silicon element main body 2 and (Pyrex) glass substrate 1 are bonded together to form into closed reference pressure chamber, even if the two
Between form closed cavity；
It will be connected finally by bonding method between metal lead wire 8 and metal wiring terminal 9；
Complete the preparation of the pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms.
The utility model is had the following advantages and effect relative to prior art：
The pressure sensor for micro electro-mechanical system chip of the utility model Liang Mo mechanisms, employs Liang Mo mechanisms, the linearity is good,
High sensitivity.
Piezo-resistance uses single crystal silicon material, while separation layer is provided between pressure sensitive film and piezo-resistance, further improves
Sensitivity and temperature characterisitic, the defects of overcome in the prior art because temperature is too high, and cause sensor failure.
The utility model preparation technology is simple and easy to do, cost is cheap, being easily integrated and miniaturization.
Brief description of the drawings
Fig. 1 is the structural representation of the pressure sensor for micro electro-mechanical system chip of the utility model Liang Mo mechanisms.
Fig. 2 is the schematic diagram of the utility model diaphragm pressure-sensitive structure.
Fig. 3 is the circuit interconnect pattern of the utility model p-type monocrystalline silicon piezo-resistance.
Embodiment
The utility model is more specifically described in detail with reference to specific embodiment.
As shown in Figures 1 to 3.The utility model discloses a kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms,
Including such as lower component：
Glass substrate 1；
N-type single-crystal silicon element main body 2；
(the SiO of separation layer 52)；
(the Si of protective layer 63N4)；
The outer rim of the n-type single-crystal silicon element main body 2 is supported on the top of glass substrate 1, n-type single-crystal silicon element main body 2
Middle part be engraved structure 3, make to form closed cavity therebetween；The top wall surface 4 of closed cavity is provided with diaphragm pressure-sensitive structure；
The separation layer 5 is arranged between n-type single-crystal silicon element main body 2 and diaphragm pressure-sensitive structure；
The protective layer 6 is arranged on the top of separation layer 5；
The diaphragm pressure-sensitive structure is provided with four p-type monocrystalline silicon piezo-resistances 7, four p-type monocrystalline silicon piezo-resistances 7
Wheatstone bridge is connected into by plain conductor, it is defeated for the mechanical pressure for being applied to its strain region to be converted into voltage data
Go out.
The diaphragm pressure-sensitive structure is divided into flat-die layer and Liang Mo mechanisms layer；
Liang Mo mechanisms layer is made up of matrix pattern resonance beam 11 and peninsula resonance beam 10；
The four p-type monocrystalline silicon piezo-resistance 7 is distributed in peninsula resonance beam 10.
The lead district is distributed in the periphery of Liang Mo mechanisms layer, and it is made up of five metal wiring terminals 9；
By the combination of this five metal wiring terminals 9 and metal lead wire 8, p-type monocrystalline silicon piezo-resistance 7 is connected into favour
Stone electric bridge.
The section shape of the engraved structure 3 is in isosceles trapezoidal structure.
The preparation method of the pressure sensor for micro electro-mechanical system chip of the utility model Liang Mo mechanisms is as follows：
Oxidation processes are carried out to n-type single-crystal silicon element main body 2；
Then p-type monocrystalline silicon piezo-resistance 7 is prepared with the method for photoetching corrosion and ion implanting；
The protective mulch 6 in p-type monocrystalline silicon piezo-resistance 7；
Then deep silicon etching is carried out to the back side of n-type single-crystal silicon element main body 2, to obtain engraved structure 3；
Then the lead district of p-type monocrystalline silicon piezo-resistance 7 is gone out to the front photoetching corrosion of n-type single-crystal silicon element main body 2；
Again by the good metal lead wire 8 of method cloth of metal sputtering, and Liang Mo mechanisms layer is performed etching；
N-type single-crystal silicon element main body 2 and (Pyrex) glass substrate 1 are bonded together to form into closed reference pressure chamber, even if the two
Between form closed cavity；
It will be connected finally by bonding method between metal lead wire 8 and metal wiring terminal 9；
Complete the preparation of the pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms.
When changing in the range of pressure acts on 0-10kPa, the top wall surface 4 of closed cavity bends, and diaphragm should act on
In piezo resistance effect, it is corresponding with pressure value that Wheatstone bridge goes out difference voltage signal.
When measuring by the insulating effect of separation layer, the electrical isolation between p-type monocrystalline silicon piezo-resistance 7 is realized, is solved
P-n junction isolated pressure sensor temperature is higher than Problem of Failure at 125 DEG C.
As described above, it can preferably realize the utility model.
Embodiment of the present utility model is simultaneously not restricted to the described embodiments, and other are any without departing from of the present utility model
Spirit Essence with made under principle change, modification, replacement, combine, simplification, should be equivalent substitute mode, be included in
Within the scope of protection of the utility model.
Claims (4)
- A kind of 1. pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms, it is characterised in that：Including such as lower component：Glass substrate (1)；N-type single-crystal silicon element main body (2)；Separation layer (5)；Protective layer (6)；The outer rim of the n-type single-crystal silicon element main body (2) is supported on the top of glass substrate (1), n-type single-crystal silicon element main body (2) middle part is engraved structure (3), makes to form closed cavity therebetween；The top wall surface (4) of closed cavity is provided with diaphragm pressure-sensitive Structure；The separation layer (5) is arranged between n-type single-crystal silicon element main body (2) and diaphragm pressure-sensitive structure；The protective layer (6) is arranged on above separation layer (5)；The diaphragm pressure-sensitive structure is provided with four p-type monocrystalline silicon piezo-resistances (7), four p-type monocrystalline silicon piezo-resistances (7) Wheatstone bridge is connected into by plain conductor, it is defeated for the mechanical pressure for being applied to its strain region to be converted into voltage data Go out.
- 2. the pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms according to claim 1, it is characterised in that：The diaphragm pressure-sensitive structure is divided into flat-die layer and Liang Mo mechanisms layer；Liang Mo mechanisms layer is made up of matrix pattern resonance beam (11) and peninsula resonance beam (10)；The four p-type monocrystalline silicon piezo-resistance (7) is distributed in peninsula resonance beam (10).
- 3. the pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms according to claim 2, it is characterised in that：Lead is distinguished In the periphery of Liang Mo mechanisms layer, it is made up of cloth five metal wiring terminals (9)；By the combination of this five metal wiring terminals (9) and metal lead wire (8), p-type monocrystalline silicon piezo-resistance (7) is connected into Wheatstone bridge.
- 4. the pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms according to claim 3, it is characterised in that：The hollow out The section shape of structure (3) is in isosceles trapezoidal structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720459220.XU CN206828092U (en) | 2017-04-28 | 2017-04-28 | A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720459220.XU CN206828092U (en) | 2017-04-28 | 2017-04-28 | A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946211A (en) * | 2017-04-28 | 2017-07-14 | 华南理工大学 | A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms and preparation method thereof |
| CN109485011A (en) * | 2018-11-23 | 2019-03-19 | 北京遥测技术研究所 | MEMS resonant pressure sensor and manufacturing process based on Si-Si-Si- glass wafer bonding techniques |
| WO2021035742A1 (en) * | 2019-08-30 | 2021-03-04 | 深圳纽迪瑞科技开发有限公司 | Pressure sensing assembly, pressure sensing method and device |
| WO2021089263A1 (en) * | 2019-11-06 | 2021-05-14 | Shl Medical Ag | Spray nozzle chip |
-
2017
- 2017-04-28 CN CN201720459220.XU patent/CN206828092U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946211A (en) * | 2017-04-28 | 2017-07-14 | 华南理工大学 | A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms and preparation method thereof |
| CN109485011A (en) * | 2018-11-23 | 2019-03-19 | 北京遥测技术研究所 | MEMS resonant pressure sensor and manufacturing process based on Si-Si-Si- glass wafer bonding techniques |
| WO2021035742A1 (en) * | 2019-08-30 | 2021-03-04 | 深圳纽迪瑞科技开发有限公司 | Pressure sensing assembly, pressure sensing method and device |
| WO2021089263A1 (en) * | 2019-11-06 | 2021-05-14 | Shl Medical Ag | Spray nozzle chip |
| CN114555160A (en) * | 2019-11-06 | 2022-05-27 | 艾斯曲尔医疗公司 | Nozzle chip |
| CN114555160B (en) * | 2019-11-06 | 2023-11-21 | 艾斯曲尔医疗公司 | Nozzle chip |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180102 Termination date: 20190428 |