CN105486435A - MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof - Google Patents

MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof Download PDF

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Publication number
CN105486435A
CN105486435A CN201610000841.1A CN201610000841A CN105486435A CN 105486435 A CN105486435 A CN 105486435A CN 201610000841 A CN201610000841 A CN 201610000841A CN 105486435 A CN105486435 A CN 105486435A
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CN
China
Prior art keywords
polysilicon
film
pressure
sensor chip
mems
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CN201610000841.1A
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Chinese (zh)
Inventor
王健
揣荣岩
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沈阳化工大学
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Priority to CN201610000841.1A priority Critical patent/CN105486435A/en
Publication of CN105486435A publication Critical patent/CN105486435A/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers,, i.e. electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers,, i.e. electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

Abstract

The invention provides a MEMS polysilicon nanofilm pressure sensor chip and a manufacturing method thereof, and relates to a sensor chip and a manufacturing method thereof. The sensor includes a monocrystalline silicon substrate (1), a pressure sensing film (4) having the section of a flat polysilicon is arranged on the silicon substrate, an enclosed cavity (2) is formed between the pressure sensing film and the substrate by taking silica as a sacrificial layer, the upper surface of the pressure sensing film (4) is provided with four polysilicon nanofilm force sensing resistors (5), the four polysilicon nanofilm force sensing resistors (5), the pressure sensing film (4), and metal leads are isolated by insulation layers (7), the four force sensing resistors (5) are connected to form a Wheatstone bridge via the metal leads to convert the pressure to voltage to output, and sealed corrosion holes (3) are arranged outside the edge of the pressure sensing film (4). The sensor preparing method is compatible with integrated circuit technology and is easy to integrate. The sensor has the characteristics of high linearity sensitivity, wide operational temperature range, high overload capability, easy integration, and low cost.

Description

A kind of MEMS polysilicon nanometer film pressure sensor chip and preparation method thereof
Technical field
The present invention relates to a kind of sensor chip and preparation method thereof, particularly relate to a kind of MEMS polysilicon nanometer film pressure sensor chip and preparation method thereof.
Background technology
MEMS(MEMS (micro electro mechanical system)) pressure transducer utilizes the piezoresistive effect of semiconductor material and good elasticity, the sensor prepared with integrated circuit technology and micromachining technology.Having the advantage that volume is little and highly sensitive, is one of sensor be most widely used.MEMS pressure sensor is mainly divided into condenser type and pressure resistance type, and condenser type is due to complex process, and technology stability requires high, and therefore, the whole world more than 90% MEMS pressure sensor is all silicon piezoresistance type.
Silicon piezoresistance type pressure sensor is divided into bulk silicon micro mechanic and face micromachining technology two kinds by processing technology.Bulk silicon micro mechanic (also claiming diffuse si) technical characterstic is technical maturity, but not easily miniaturization and integrated.Surface micromachined technology (also claiming sacrificial layer technology) feature is low, the easy of integration and miniaturization of cost.Along with the rise of smart mobile phone, panel computer, wearable device, and the great market of comparatively ripe automotive electronics and industrial control field is to demand that is small-sized and integrated transducer, and face micro mechanical pressure sensor is flourish.
Usually, face micro mechanical pressure sensor is divided into flat type and stepped ramp type two kinds by structure.Flat type pressure transducer closed cavity is made up of the groove etched monocrystalline substrate and smooth polysilicon film, and stepped ramp type pressure transducer closed cavity is made up of the polysilicon film of monocrystalline substrate and convex (pressure-sensitive face and supporting surface are formed).The flat type linearity is good, and stepped ramp type is highly sensitive.
The pressure transducer force sensing resistance of face micromachined generally adopts common polycrystalline silicon thin film resistance (thickness is greater than 0.3 μm), this resistance-temperature characteristic is good, but sensitivity comparatively diffusion silicon pressure sensor is low, therefore, common polycrystalline silicon thin film constrains face micromechanics semiconductor pressure sensor superior structure performance.
Polysilicon nanometer film be thickness close to or be less than the polysilicon membrane of 100nm.Thickness is 80nm ~ 100nm polysilicon nanometer thin film is 3 × 10 in doping content 20cm -3have significant tunnel piezoresistive effect time neighbouring, show the piezoresistive characteristic more superior than conventional polysilicon nano thin-film, strain factor can reach 34, higher than common polycrystalline silicon thin film by more than 25%; Temperature-coefficient of electrical resistance can be less than 10 -4/ DEG C, less of than general thin an order of magnitude; Strain factor temperature coefficient can be less than 10 -3/ DEG C, less than general thin more than one times.This material is applied and is compared sensitivity than common polycrystalline silicon thin film and obviously improve in body silicon pressure sensor.
In order to improve transducer sensitivity, people adopt on soi chip, and with epitaxial growth monocrystalline silicon for structural sheet, with the silicon dioxide of SOI for sacrifice layer, diffuse si is that force sensing resistance manufactures pressure transducer.But owing to adopting soi chip, cost significantly increases than silicon single crystal wafer.
Current, there are the following problems for face micro mechanical pressure sensor:
(1) because face micro mechanical pressure sensor volume is little and pressure sensitive film is thin, the linearity is slightly poor;
(2) face micro mechanical pressure sensor adopts common polycrystalline silicon thin film to be force sensing resistance usually, compared with diffuse si, and good temp characteristic but remolding sensitivity is low.
Summary of the invention
The object of the present invention is to provide a kind of MEMS polysilicon nanometer film pressure sensor chip and preparation method thereof, the present invention adopt smooth profile micro mechanical structure to make the cost of sensor is low, the linearity is high; Polysilicon nanometer thin film is adopted to improve sensitivity and good temp characteristic as force sensing resistance; Preparation technology and integrated circuit are completely compatible, easy of integrationization; Adopt appropriate cavities height, improve overload capacity; Insulating medium isolation is adopted to expand operating temperature range.
The object of the invention is to be achieved through the following technical solutions:
A kind of MEMS polysilicon nanometer film pressure sensor chip, described chip comprises monocrystalline substrate, the pressure sensitive film that section is flat type is set on a monocrystaline silicon substrate, pressure sensitive film is connected with monocrystalline substrate and forms closed cavity between, outside pressure sensitive film edge, surrounding is provided with corrosion hole, on pressure sensitive film, be provided with four force sensing resistances, four force sensing resistances connect into Wheatstone bridge by plain conductor, pressure are converted to voltage and export.
Described a kind of MEMS polysilicon nanometer film pressure sensor chip, described pressure sensitive film, is provided with insulation course between force sensing resistance and plain conductor.
Described a kind of MEMS polysilicon nanometer film pressure sensor chip, forms vacuum in described cavity.
Described a kind of MEMS polysilicon nanometer film pressure sensor chip, described force sensing resistance is P type polysilicon nanometer film resistance.
Described a kind of MEMS polysilicon nanometer film pressure sensor chip, described pressure sensitive film is polysilicon, and its plan view shape is rectangle or circle.
A kind of MEMS polysilicon nanometer film pressure sensor chip method for making, described method comprises following preparation process:
(1) adopt the method for thermal oxide post-etching to form groove on a silicon substrate, deposit silicon dioxide is sacrifice layer in a groove;
(2) deposit ground floor polysilicon annealing, etching corrosion hole;
(3) by corrosion hole, selective wet etching removes sacrifice layer and drying;
(4) deposit second layer polysilicon, seal erosion hole, and form pressure sensitive film with ground floor polysilicon;
(5) on pressure sensitive film, deposit or oxidation form insulation course as separation layer, then depositing polysilicon nano thin-film, and boron ion implanted dopant and annealing, etched 4 polysilicon nanometer thin film resistance;
(6) carve fairlead, splash-proofing sputtering metal, has etched electrical connection.
Advantage of the present invention and effect are:
1., for pressure transducer of the present invention, the cost of sensor is low, the linearity is high to adopt smooth profile micro mechanical structure to make; Polysilicon nanometer thin film is adopted to improve sensitivity and good temp characteristic as force sensing resistance; Preparation technology and integrated circuit are completely compatible, easy of integrationization; Adopt appropriate cavities height, improve overload capacity; Insulating medium isolation is adopted to expand operating temperature range.
2.the present invention adopts smooth profile micro mechanical structure to improve the linearity and miniaturization, adopts polysilicon nanometer film to be that force sensing resistance improves sensitivity, adopts integrated circuit compatible technology to realize sensor easy of integration.
3. the primary structure of sensor of the present invention is made up of silicon substrate, pressure sensitive film, cavity, corrosion hole and force sensing resistance.Pressure sensitive film is made up of polysilicon, and cavity adopts face micromachining technology, i.e. sacrificial layer technology, removes silicon dioxide sacrificial layer with hydrofluorite by corrosion hole and form, close corrosion hole with polysilicon, and pressure sensitive film and silicon substrate form closed cavity, are approximately vacuum.On pressure sensitive film, deposit silicon dioxide is insulation course, then, respectively arranges two P type polysilicon nanometer thin film force sensing resistances, and connect into Wheatstone bridge at the edge of pressure sensitive film and center, and circuit adopts constant pressure source or constant current source power supply.When pressure effect, sensor diaphragm all bends, and membrane strains acts on force sensing resistance and produces piezoresistive effect, and electric bridge output differential voltage signal is corresponding with force value.When pressure is in transducer range scope, sensor exports and the linear magnitude of voltage of pressure, when pressure exceed range reach a certain value time, the pressure sensitive film of sensor and substrate contact, slow down diaphragm stress with pressure trend, under ensureing large pressure, diaphragm does not rupture, and improves overload capacity.By changing sensor diaphragm thickness of the present invention and diaphragm size, the pressure transducer of various range can be designed.
Accompanying drawing explanation
Fig. 1 is sensor vertical view of the present invention;
Fig. 2 is sensor sectional view of the present invention;
Fig. 3 is the present invention's first time thermal oxidation technology sectional view;
Fig. 4 is the present invention's second time thermal oxidation technology sectional view;
Fig. 5 is deposit ground floor polysilicon process sectional view of the present invention;
Fig. 6 is etching cavity process section of the present invention;
Fig. 7 is that the present invention forms annular seal space process section.
Wherein: 1. monocrystalline substrate, 2. cavity, 3. corrosion hole, 4. pressure sensitive film, 5. force sensing resistance, 6. plain conductor, 7. insulation course, 101. ground floor polysilicons, 102. second layer polysilicons, 103. silicon nitrides, 104. silicon dioxide.
Embodiment
Below in conjunction with embodiment, the present invention is described in detail.
Embodiment 1
The present invention is a kind of MEMS polysilicon nanometer film pressure sensor chip, as shown in Figures 1 and 2.Sensor comprises: monocrystalline substrate 1; Monocrystalline substrate 1 is provided with the pressure sensitive film 4 that section is flat type, and thickness is 3 μm, and area is 200 μm × 100 μm; Pressure sensitive film 4 is connected with monocrystalline substrate 1 and forms closed cavity 2 between, and housing depth is 1 μm; Outside pressure sensitive film 4 edge, surrounding is provided with corrosion hole 3, closes form near vacuum cavity after erosion removal sacrifice layer with polysilicon; On pressure sensitive film 4, be provided with four force sensing resistances 5, force sensing resistance is P type polysilicon nanometer film; Four force sensing resistances 5 connect into Wheatstone bridge by plain conductor 6, pressure are converted to voltage and export.
Embodiment 2
The present invention proposes a kind of MEMS polysilicon nanometer film pressure sensor chip preparation method, comprises the following steps:
(1) Figure 3 shows that first time thermal oxidation technology.Using plasma strengthens chemical vapour deposition technique (PECVD) deposit 0.2 μm of thick silicon nitride as masking layer on a monocrystaline silicon substrate, reheating oxidation growth 1 μm of thick silicon dioxide, adopt phosphoric acid and hydrofluorite to remove silicon nitride and silicon dioxide respectively, on silicon chip, Formation Depth is 0.5 μm of groove.
(2) Figure 4 shows that second time thermal oxidation technology.Repeat step (1), silicon chip is formed the notch cuttype groove of two degree of depth of 0.5 μm and 1 μm.
(3) Figure 5 shows that deposit ground floor polysilicon process.Adopt PECVD deposit silicon dioxide in a groove, adopt low-pressure chemical vapour deposition technique (LPCVD) deposit 1 μm of thick polysilicon above, annealing (temperature: 900 DEG C ~ 1200 DEG C; Time: 10min ~ 180min; Nitrogen protection).
(4) Figure 6 shows that etching cavity technique.Adopt dry etching technology to prepare corrosion hole, be put into by chip by the rotten clean silicon dioxide sacrificial layer of corrosion hole in hydrofluoric acid solution, adopt critical seasoning, corrosive liquid is used liquid CO by the method gradually 2replace, sample is placed in CO afterwards 2in critical point, the interface of gas, liquid disappears, drier silicon chip.
(5) Figure 7 shows that formation annular seal space technique.Adopt LPCVD deposit one deck 2.0 μm of thick polysilicons and second layer polysilicon 104, realize polysilicon seal erosion hole, form vacuum seal cavity 2, two-layer polysilicon forms pressure sensitive film 4.
(6) Figure 2 shows that formation resistance and metallization line process.Adopt PECVD deposition techniques one deck 0.2 μm of thick silicon dioxide as insulation course, realize polysilicon pressure sensitive film and resistive isolation.LPCVD deposition techniques 0.09 μm of thick polysilicon nanometer film is adopted to be electrostrictive strain resistance layer; Adopt LPCVD deposition techniques one deck 0.12 μm of thick silicon dioxide as insulation course; Make masking film with photoresist, adopt ion implantation technique, realize the boron doping of polysilicon nanometer membrane strain resistance, energy is 20keV, and dosage is 2.3 × 10 15cm -2.By annealing (temperature: 900 DEG C ~ 1200 DEG C; Time: 10min ~ 180min; Nitrogen protection) activator impurity, etching forms polysilicon nanometer film force sensing resistance 5.Photoetching polysilicon nanometer membrane strain resistance lead hole, and realize aluminum metal wire 6 by Conventional microelectronic technique and connect up, complete chip manufacturing.
The transducer range obtained by above-mentioned technique is 2MPa, and its Full-span output is 68mV/V, nonlinearity ﹤ 0.1%, thermal zero drift is 0.01%/DEG C, thermal sensitivity drift is 1%/DEG C, overload pressure is 8 times of full scales, and the working temperature upper limit is 350 DEG C.
Pressure sensor chip of the present invention can be widely used in the pressure survey in the fields such as smart electronics product, Internet of Things, environmental Kuznets Curves pressure survey and air line, petrochemical industry, electric power.

Claims (6)

1. a MEMS polysilicon nanometer film pressure sensor chip, it is characterized in that, described chip comprises monocrystalline substrate (1), monocrystalline substrate (1) arranges the pressure sensitive film (4) that section is flat type, pressure sensitive film (4) is connected with monocrystalline substrate (1) and forms closed cavity (2) between, outside pressure sensitive film (4) edge, surrounding is provided with corrosion hole (3), four force sensing resistances (5) are provided with on pressure sensitive film (4), four force sensing resistances (5) connect into Wheatstone bridge by plain conductor (6), pressure are converted to voltage and export.
2. a kind of MEMS polysilicon nanometer film pressure sensor chip according to claim 1, is characterized in that, described pressure sensitive film (4), is provided with insulation course between force sensing resistance (5) and plain conductor (6).
3. a kind of MEMS polysilicon nanometer film pressure sensor chip according to claim 1, is characterized in that, forms vacuum in described cavity (2).
4. a kind of MEMS polysilicon nanometer film pressure sensor chip according to claim 1, is characterized in that, described force sensing resistance (5) is P type polysilicon nanometer film resistance.
5. a MEMS polysilicon nanometer film pressure sensor chip, is characterized in that, described pressure sensitive film (4) is polysilicon, and its plan view shape is rectangle or circle.
6. a MEMS polysilicon nanometer film pressure sensor chip method for making, is characterized in that, described method comprises following preparation process:
(1) adopt the method for thermal oxide post-etching to form groove on a silicon substrate, deposit silicon dioxide is sacrifice layer in a groove;
(2) deposit ground floor polysilicon annealing, etching corrosion hole;
(3) by corrosion hole, selective wet etching removes sacrifice layer and drying;
(4) deposit second layer polysilicon, seal erosion hole, and form pressure sensitive film with ground floor polysilicon;
(5) on pressure sensitive film, deposit or oxidation form insulation course as separation layer, then depositing polysilicon nano thin-film, and boron ion implanted dopant and annealing, etched 4 polysilicon nanometer thin film resistance;
(6) carve fairlead, splash-proofing sputtering metal, has etched electrical connection.
CN201610000841.1A 2016-01-04 2016-01-04 MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof CN105486435A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106168517A (en) * 2016-09-21 2016-11-30 成都创慧科达科技有限公司 A kind of high sensitivity integrated pressure sensor
CN106525326A (en) * 2016-10-26 2017-03-22 中南大学 Method of reducing temperature drift of pressure-resistance sensor
CN106768515A (en) * 2017-01-10 2017-05-31 中南大学 Differential type pressure cell and its method of production based on double hamburger structures
CN106813810A (en) * 2017-01-17 2017-06-09 中南大学 The method for separating flexible temperature pressure sensing component temperature pressure-responsive
CN109764998A (en) * 2018-12-27 2019-05-17 西安交通大学 A kind of diaphragm type graphene MEMS micro-pressure sensor chip and preparation method thereof
CN110446915A (en) * 2017-03-29 2019-11-12 Tdk株式会社 Fluid pressure test device
WO2020062215A1 (en) * 2018-09-30 2020-04-02 深圳大学 Stress detection device and stress detection matrix system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120105230A (en) * 2011-03-15 2012-09-25 지이센싱코리아(주) Method for producing micro-absolute pressure type pressure sensor
CN103196596A (en) * 2013-03-21 2013-07-10 揣荣岩 Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof
CN103604538A (en) * 2013-11-29 2014-02-26 沈阳工业大学 MEMS pressure sensor chip based on SOI technology and manufacturing method thereof
CN104864988A (en) * 2015-06-10 2015-08-26 中国电子科技集团公司第十三研究所 MEMS pressure sensor in silicon island-diaphragm structure, and manufacturing method thereof
CN205449349U (en) * 2016-01-04 2016-08-10 沈阳化工大学 MEMS polycrystalline silicon nanometer membrane pressure sensor chip

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120105230A (en) * 2011-03-15 2012-09-25 지이센싱코리아(주) Method for producing micro-absolute pressure type pressure sensor
CN103196596A (en) * 2013-03-21 2013-07-10 揣荣岩 Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof
CN103604538A (en) * 2013-11-29 2014-02-26 沈阳工业大学 MEMS pressure sensor chip based on SOI technology and manufacturing method thereof
CN104864988A (en) * 2015-06-10 2015-08-26 中国电子科技集团公司第十三研究所 MEMS pressure sensor in silicon island-diaphragm structure, and manufacturing method thereof
CN205449349U (en) * 2016-01-04 2016-08-10 沈阳化工大学 MEMS polycrystalline silicon nanometer membrane pressure sensor chip

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106168517A (en) * 2016-09-21 2016-11-30 成都创慧科达科技有限公司 A kind of high sensitivity integrated pressure sensor
CN106525326A (en) * 2016-10-26 2017-03-22 中南大学 Method of reducing temperature drift of pressure-resistance sensor
CN106525326B (en) * 2016-10-26 2018-12-18 中南大学 A method of reducing piezoresistance sensor temperature drift
CN106768515A (en) * 2017-01-10 2017-05-31 中南大学 Differential type pressure cell and its method of production based on double hamburger structures
CN106768515B (en) * 2017-01-10 2019-01-18 中南大学 Differential type pressure cell and its method of production based on double hamburger structures
CN106813810A (en) * 2017-01-17 2017-06-09 中南大学 The method for separating flexible temperature pressure sensing component temperature pressure-responsive
CN110446915A (en) * 2017-03-29 2019-11-12 Tdk株式会社 Fluid pressure test device
WO2020062215A1 (en) * 2018-09-30 2020-04-02 深圳大学 Stress detection device and stress detection matrix system
CN109764998A (en) * 2018-12-27 2019-05-17 西安交通大学 A kind of diaphragm type graphene MEMS micro-pressure sensor chip and preparation method thereof

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Application publication date: 20160413