CN108147360A - MEMS structure, MEMS component and its manufacturing method - Google Patents
MEMS structure, MEMS component and its manufacturing method Download PDFInfo
- Publication number
- CN108147360A CN108147360A CN201810015599.4A CN201810015599A CN108147360A CN 108147360 A CN108147360 A CN 108147360A CN 201810015599 A CN201810015599 A CN 201810015599A CN 108147360 A CN108147360 A CN 108147360A
- Authority
- CN
- China
- Prior art keywords
- layer
- groove
- mems structure
- release aperture
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 45
- 208000005189 Embolism Diseases 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910017083 AlN Inorganic materials 0.000 claims description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 176
- 239000004020 conductor Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
Abstract
This application discloses MEMS structure, MEMS component and its manufacturing methods.The method includes forming template layer；The first groove and multiple second grooves around the first groove are formed in template layer；Stop-layer is formed on template layer, conformally covers template layer；Sacrificial layer is formed on stop-layer, fills the first groove and multiple second grooves；Mask layer is formed on stop-layer and sacrificial layer, covers sacrificial layer；Multiple release apertures are formed on mask layer；Cavity is formed via multiple release apertures and multiple second grooves removal sacrificial layer；And confining bed is formed on mask layer, confining bed closes multiple release apertures, wherein, multiple second grooves are corresponding with the position of release aperture, confining bed includes multiple protruding portion, and multiple protruding portion is inserted into across multiple release apertures in multiple second grooves, so as to form embolism to close multiple release apertures.This method is using embolism structure filling release aperture and closed cavity, to improve the job stability of MEMS structure and reliability.
Description
Technical field
The present invention relates to MEMS (MEMS) technology, more particularly, to MEMS structure, MEMS component and its manufacture
Method.
Background technology
MEMS (MEMS) is the microsystem formed on a semiconductor substrate using the techniques such as photoetching and etching.
Include the micro-structures such as cavity, electrode inside MEMS structure, a plurality of types of products have been derived, including accelerometer, pressure
Sensor, humidity sensor, fingerprint sensor, gyroscope, microphone, motor, Micropump etc..
With the development of the mobile terminals such as mobile phone, fingerprint sensor has been widely used.Fingerprint refers to the finger of people
The lines of the convex injustice of the positive surface skin fovea superior in end, the different line type of the regular arrangement form of lines.Fingerprint recognition, which refers to, passes through ratio
The details of more different fingerprints carry out identity authentication.Due to unchangeable property, uniqueness and convenience, fingerprint knowledge
Other application is more and more extensive.Fingerprint sensor is, for example, the MEMS structure for including piezoelectric material, utilizes the inverse pressure of piezoelectric material
Electrical effect generates ultrasonic wave.The ultrasonic wave when touching fingerprint, shown in the ridge, valley in fingerprint different reflectivity and thoroughly
Penetrate rate.Finger print information can be read by the ultrasonic beam signal scanned in certain area.
Further, fingerprint sensor can be MEMS component, including the MEMS structure integrated and cmos circuit.
Ultrasonic wave, cmos circuit are used to provide drive signal and processing detection letter for MEMS structure MEMS structure for transmitting and receiving
Number.Eutectic bonding is integrated CMOS circuit and the effective ways of MEMS structure.But bonding slurry can be generated in bonding process
Overflow phenomena leads to the structure member short circuit of tube core and fails, yield greatly reduces.Meanwhile bonding technology alignment precision
It is not high, it is larger so as to cause the size for the eutectic bonding of electrical connection point, improve manufacture cost.Using bonding technology collection
Lead to manufacturing process complication, high cost and low yield into cmos circuit and MEMS structure.
In improved method, MEMS structure can be directly made on cmos circuit.However, due on cmos circuit
The lamination of MEMS structure is formed, therefore, formation cavity is extremely difficult in MEMS structure, is especially difficult to be accurately defined cavity
Size.For example, the MEMS structure can only provide a Free Surface along stacking direction always, thus in the step for forming cavity
It is only capable of being open on the Free Surface in rapid, so as to limit technique degree of freedom.In addition, cmos circuit itself includes multiple interlayers
Dielectric layer, wherein containing a large amount of gas, such as Ar, H2, in the step of forming cavity or later, gas is discharged to cavity
In, it is deteriorated so as to cause the mechanical performance and acoustical behavior of cavity.
Therefore, it is desirable to the cavity forming method being further improved in MEMS structure with improve with CMOS technology compatibility and
Improve the job stability and reliability of MEMS structure.
Invention content
In view of this, the object of the present invention is to provide MEMS structure, MEMS component and its manufacturing method, wherein, using envelope
The protruding portion for closing layer forms embolism structure filling release aperture and closed cavity, to improve the job stability of MEMS structure and can
By property.
According to a kind of method for manufacturing MEMS structure provided by the invention, including：Form template layer；In the template
The first groove and multiple second grooves around first groove are formed in layer；Stop-layer is formed on the template layer,
The stop-layer conformally covers the template layer；Form sacrificial layer on the stop-layer, the sacrificial layer filling described the
One groove and the multiple second groove；Mask layer, the mask layer covering are formed on the stop-layer and the sacrificial layer
The sacrificial layer；Multiple release apertures are formed on the mask layer；Via the multiple release aperture and the multiple second groove
It removes the sacrificial layer and forms cavity；And confining bed is formed on the mask layer, the confining bed closing is the multiple to be released
Discharge hole, wherein, the multiple second groove is corresponding with the position of the release aperture, and the confining bed includes multiple protruding portion,
The multiple protruding portion is inserted into across the multiple release aperture in the multiple second groove, so as to form embolism to close
State multiple release apertures.
Preferably, wherein, first groove and the multiple second groove are formed using etching so that described first is recessed
Slot and the multiple second groove extend downwardly the first depth and the second depth from the surface of the template layer respectively, wherein, institute
The first depth is stated more than the second depth.
Preferably, wherein, first groove penetrates the template layer, so as to first depth and the template layer
Thickness is corresponding.
Preferably, wherein, the multiple second groove is respectively included in the first opening of the surface exposure of the template layer,
And the second opening of the side wall exposure in first groove, first opening are one corresponding to the multiple release aperture
Release aperture connects, and second opening is connected with first groove.
Preferably, wherein, the supporting layer to be formed and be used to support the template layer is further included.
Preferably, wherein, the lateral dimension of the release aperture is 0.1 micron to 5 microns.
Preferably, wherein, the template layer is any by being selected from metal, semiconductor, non-crystalline silicon, silica and silicon nitride
Material forms.
Preferably, wherein, the confining bed is formed by being selected from aluminium nitride, silica and any material of silicon nitride.
Preferably, wherein, the cross sectional shape of the multiple release aperture is selected from circle, ellipse, triangle, rectangle, lacks
Any one of angular moment shape, pentagon.
Preferably, wherein, the cross sectional shape of the multiple second groove be selected from circle, ellipse, triangle, rectangle,
Any one of unfilled corner rectangle, pentagon.
Preferably, in addition on the confining bed form laminated piezoelectric, the laminated piezoelectric include stacking gradually the
One electrode, piezoelectric layer and second electrode.
Preferably, wherein, the sacrificial layer is made of silica.
Preferably, wherein, the step of forming cavity, is included using gas phase etching, wherein the etching gas used is HF.
Preferably, wherein, the mask layer and the stop-layer are made of respectively corrosion resistant material.
Preferably, wherein, the corrosion resistant material includes any one in tantalum, gold, aluminium nitride, aluminium oxide and non-crystalline silicon
Kind.
According to another MEMS structure provided by the invention, including：Template layer, the template layer include limiting cavity
The first groove；Stop-layer on the template layer, the stop-layer cover the bottom and side wall of first groove, from
And it is formed and the corresponding cavity of first groove；Mask layer on the cavity, the mask layer include with
Multiple release apertures of the cavity connection；And the confining bed on the mask layer, the confining bed closing are the multiple
Release aperture, wherein, the template layer further includes multiple second grooves around first groove, the multiple second groove with
The position of the release aperture is corresponding, and the confining bed includes multiple protruding portion, and the multiple protruding portion passes through the multiple release
Discharge hole is inserted into the multiple second groove, so as to form embolism to close the multiple release aperture, wherein, described first is recessed
First depth of slot is more than the second depth of the second groove.
Preferably, wherein, the multiple second groove is respectively included in the first opening of the surface exposure of the template layer,
And the second opening of the side wall exposure in first groove, first opening are one corresponding to the multiple release aperture
Release aperture connects, and second opening is connected with first groove.
Preferably, it further includes：It is used to support the supporting layer of the template layer.
Preferably, wherein, first groove penetrates the template layer.
Preferably, wherein, the lateral dimension of the release aperture is 0.1 micron to 5 microns.
Preferably, wherein, the template layer is any by being selected from metal, semiconductor, non-crystalline silicon, silica and silicon nitride
Material forms.
Preferably, wherein, the mask layer and the stop-layer are made of respectively corrosion resistant material.
Preferably, wherein, the corrosion resistant material includes any one in tantalum, gold, aluminium nitride, aluminium oxide and non-crystalline silicon
Kind.
Preferably, wherein, the confining bed is formed by being selected from aluminium nitride, silica and any material of silicon nitride.
Preferably, the cross sectional shape of the multiple release aperture is selected from circle, ellipse, triangle, rectangle, unfilled corner square
Any one of shape, pentagon.
Preferably, wherein, the cross sectional shape of the multiple second groove be selected from circle, ellipse, triangle, rectangle,
Any one of unfilled corner rectangle, pentagon.
Preferably, it further includes：Laminated piezoelectric on the confining bed.
Preferably, wherein, the laminated piezoelectric includes the first electrode, piezoelectric layer and the second electrode that stack gradually.
Preferably, it further includes：It is used to support the supporting layer of the template layer.
According to another MEMS component provided by the invention, including：Cmos circuit；And according in claim 16 to 28
Any one of them MEMS structure, wherein, the cmos circuit is connected with the MEMS structure, for the MEMS structure
Drive signal is provided and receives the detection signal of the MEMS structure.
According to another MEMS component provided by the invention, including：TFT circuit；And according in claim 16 to 29
Any one of them MEMS structure, wherein, the TFT circuit is connected with the MEMS structure, described in selectively inciting somebody to action
A part for MEMS structure is connected to external circuit, and the external circuit provides drive signal and reception to the MEMS structure
The detection signal of the MEMS structure.
The MEMS structure and its manufacturing method of the present invention is limited the size of cavity using the first groove in template layer, adopted
It is inserted into the multiple protruding portion in confining bed in the second groove of the release aperture in mask layer and template layer, so as to form embolism,
It is steady so as to improve the compatibility with CMOS technology and the work for improving MEMS structure to improve sealing effect and improve mechanical strength
Qualitative and reliability.
In a preferred embodiment, multiple second grooves are distributed in the periphery of cavity, so as to maintain the integrality of mask layer
And mechanical strength so that the mask layer can support confining bed.
This method can obtain size uniform and accurate vacuum cavity, and stop-layer and mask layer can be utilized to completely cut off
The gas of interlayer dielectric layer release in cmos circuit, further improves the compatibility with CMOS technology.The MEMS structure can be with
With forming MEMS component, such as ultrasonic fingerprint sensor together with cmos circuit, fingerprint sensor working frequency can be improved
Stability and dependability.
Description of the drawings
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
The bottom view of confining bed and MEMS groups in MEMS component according to embodiments of the present invention is shown respectively in Fig. 1 a to 1c
The sectional view of the different location of part；
Fig. 2 a and 2b to 9a and 9b shows cutting for the manufacturing method different phase of MEMS component according to embodiments of the present invention
Face figure.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described the present invention.In various figures, identical element is using similar attached
Icon is remembered to represent.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to it is not shown certain
Well known part.
Many specific details of the present invention, such as the structure of device, material, size, processing work is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
In the following description, term " MEMS component " represents that cmos circuit and MEMS structure integrate the group to be formed
Part.In an example, MEMS component is, for example, the ultrasonic sensor for including cmos circuit and ultrasonic transducer.However,
The embodiment of the present invention is not limited to MEMS component and is the situation of ultrasonic sensor, but may adapt to any including cavity
MEMS structure and its MEMS component to be formed is integrated with cmos circuit.
The present invention can be presented in a variety of manners, some of them example explained below.
The bottom view of confining bed and MEMS groups in MEMS component according to embodiments of the present invention is shown respectively in Fig. 1 a to 1c
The sectional view of the different location of part.The confining bed 125 in MEMS component is shown in fig 1 a, which is from substrate to envelope
Close the view of layer observation.
As shown in Figure 1a, in MEMS component 100, confining bed 125 is used for closed cavity.In fig 1 a by confining bed 125
It is separately shown.However, it is to be appreciated that in final MEMS component 100, confining bed 125 is only a part for total
And above cavity.
Confining bed 125 includes extending to the multiple protruding portion 125a in release aperture, as embolism, for closing release aperture.
The position of the multiple protruding portion 125a is corresponding with release aperture, that is, is separated from each other and is distributed in the periphery of cavity.In fig 1 a
Line AA and BB the different interception positions of subsequent sectional view are shown, wherein, line AA is without protruding portion 125a, and line BB is then by prominent
Go out portion 125a.
Fig. 1 b and 1c be shown respectively along the sectional view of AA and line BB.As shown in the figure, MEMS component 100 includes what is stacked
Cmos circuit 110 and MEMS structure 120.
The cmos circuit 110 includes the multiple transistors being formed at least partially in P type substrate 101 and described
The multiple wiring layers and multiple interlayer dielectric layers stacked gradually above multiple transistors.As an example, it is shown in Fig. 1 b and 1c
Only one P-type transistor and only one N-type transistor, the first interlayer dielectric layer 106, the first wiring layer 107 and the second layer
Between dielectric layer 108.N-type well region 102 is formed in P type substrate 101.Then, P-type transistor is formed in N-type well region 102
Source/drain region 103.The source/drain region 104 of N-type transistor is formed in P type substrate 101.In P type substrate 101 and N-type well region 102
Form the gate-dielectric 111 stacked gradually and grid conductor 105.In P-type transistor, grid conductor 105 and N-type well region
It is separated between 102 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region so that N-type well region
102 are located at a part for 105 lower section of grid conductor as channel region.In N-type transistor, grid conductor 105 and P type substrate
It is separated between 101 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region so that P type substrate
101 are located at a part for 105 lower section of grid conductor as channel region.The source/drain region 103 of P-type transistor and N-type transistor
Source/drain region 104 and grid conductor 105 can be electrically connected via conductive channel with the first wiring layer 107.
The MEMS structure 120 includes the template layer 121 positioned at 108 top of the second interlayer dielectric layer of cmos circuit 110, stops
Only layer 122, mask layer 124 and confining bed 125.Template layer 121 is located on the second interlayer dielectric layer 108 and including the first groove
131, the stop-layer 122 conformally covers the template layer 121, so as to form cavity 133 in first groove 131.
The first groove 131 in template layer 121 is used to limit the positions and dimensions of cavity, so as to accurately control the transverse direction of cavity
Size and longitudinal size.Mask layer 124 includes release aperture 132, which is used to carry in the forming process of cavity 133
For etchant into channel and the passing away of etch products.The cross sectional shape of release aperture 132 is selected from round, oval
Any one of shape, triangle, rectangle, unfilled corner rectangle, pentagon.In a preferred embodiment, the lateral dimension of release aperture 132
Substantially 0.1 micron to 5 microns.124 common surrounding cavity 133 of the stop-layer 122 and mask layer.
Confining bed 125 is located on cavity 133, including multiple protruding portion 125a, for closing release aperture 132.It is the multiple
The position of protruding portion 125a is corresponding with the position of release aperture 132, that is, is separated from each other and is distributed in the periphery of cavity.The distribution side
Formula can keep the integrality and mechanical strength of mask layer 124 above cavity so that mask layer 124 can support confining bed
125.The protruding portion 125a extends above mask layer 124, across release aperture 132, and reaches the pre- of 124 lower section of mask layer
Depthkeeping degree.
Template layer 121 includes multiple second groove 121a, is respectively used to accommodate the lower part of the multiple protruding portion 125a.The
The cross sectional shape of two groove 121a is selected from any one of circle, ellipse, triangle, rectangle, unfilled corner rectangle, pentagon.
The second groove 121a includes the be open with release aperture 132 corresponding first and connected with cavity 133 second opening.Such as
Second opening is to remove the opening that a part of side wall of first groove 131 is formed.The multiple protruding portion 125a is worn
It crosses release aperture 132 and is inserted into the second groove 121a, so as to form embolism, to close release aperture 132.
In the above-described embodiment, MEMS component 100 includes the cmos circuit 110 stacked gradually and MEMS structure 120,
Cavity 133 is formed in MEMS structure 120.Cavity is formed using template layer 121 and stop-layer 122, can not only reduce cavity shape
Into difficulty, and can more accurately limit the size of cavity.Using confining bed 125 protruding portion be inserted into release aperture and
It extends in the second groove of template layer 121, so as to form embolism, to improve sealing effect and improve mechanical strength, so as to change
Kind job stability and reliability compatible and that improve MEMS structure with CMOS technology.
In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor, and MEMS structure 120 can also include
More layers.For example, above confining bed 125, the laminated piezoelectric of ultrasonic transducer can also be further formed.In the structure
In, confining bed 125 provides mechanical support for laminated piezoelectric.
The laminated piezoelectric of the ultrasonic transducer includes the Seed Layer stacked gradually, first electrode, piezoelectric layer and the second electricity
Pole.In an alternative embodiment, if forming Seed Layer, the release in Seed Layer closing mask layer 124 may be used
Hole 132, so as to save the confining bed independently formed.Further, MEMS component 100 is further included for by 110 He of cmos circuit
The first contact and the second contact that MEMS structure 120 is electrically connected to each other.First contact is connected to via the through-hole across piezoelectric layer
First electrode below piezoelectric layer, second connects to second electrode.First contact and the second contact are via from piezoelectricity
The through-hole that layer reaches the first wiring layer is connected to the first wiring layer.Therefore, the opposite table of the piezoelectric layer in ultrasonic transducer two
First electrode and second electrode on face are utilized respectively the first contact and second and connect to below ultrasonic transducer
Cmos circuit.
In the above-described embodiment, MEMS structure 120 is formed in the top of cmos circuit 110.In the implementation of a replacement
In example, thin film transistor (TFT) (TFT) circuit may be used and substitute cmos circuit.TFT circuit is for example including glass substrate and thereon
The multiple TFT formed.Multiple TFT in TFT circuit can be used as switch, be connected respectively with the pixel unit in CMOS structure
It connects, sensing signal is obtained to pixel unit or selectively from pixel unit so as to selectively provide drive signal.Another
In one alternative embodiment, dielectric substrate may be used and substitute cmos circuit.In this embodiment, dielectric substrate is tied for MEMS
Structure provides support, and MEMS component mainly realizes the relevant function of MEMS structure, and using external circuit provide drive signal and
Signal processing function.
Fig. 2 a and 2b to 9a and 9b shows cutting for the manufacturing method different phase of MEMS component according to embodiments of the present invention
Face figure, wherein, Fig. 2 a to 9a are the sectional view intercepted along Fig. 1 a center lines AA respectively, and Fig. 2 b to 9b are cut along Fig. 1 a center lines BB respectively
The sectional view taken.
Template layer 121 is formed on cmos circuit 110, as shown in figures 2 a and 2b.It is used to form the technique of cmos circuit 110
It is known, this will not be detailed here.
The cmos circuit is for example including multiple transistors for being formed at least partially in P type substrate 101 and described
The first interlayer dielectric layer 106, the first wiring layer 107 and the second interlayer dielectric layer 108 stacked gradually above multiple transistors.Make
For example, only one P-type transistor and only one N-type transistor are shown in Fig. 3 a.N-type is formed in P type substrate 101
Well region 102.Then, the source/drain region 103 of P-type transistor is formed in N-type well region 102.It is brilliant that N-type is formed in P type substrate 101
The source/drain region 104 of body pipe.The gate-dielectric 111 and grid stacked gradually is formed in P type substrate 101 and N-type well region 102
Conductor 105.In P-type transistor, separated between grid conductor 105 and N-type well region 102 by gate-dielectric 111, grid conductor
105 are laterally extended between adjacent source/drain region so that N-type well region 102 is located at a part of conduct of 105 lower section of grid conductor
Channel region.In N-type transistor, separated between grid conductor 105 and P type substrate 101 by gate-dielectric 111, grid conductor
105 are laterally extended between adjacent source/drain region so that P type substrate 101 is located at a part of conduct of 105 lower section of grid conductor
Channel region.The source/drain region 103 of P-type transistor and the source/drain region 104 of N-type transistor and grid conductor 105 can be via leading
Electric channel is electrically connected with the first wiring layer 107.
In alternate embodiments, the transistor in cmos circuit 110 is not limited to two, but can include at least one
Transistor, the interlayer dielectric layer in cmos circuit 110 can include at least one interlayer dielectric layer not only in two,
Wiring layer in cmos circuit 110 is not limited to one, but can include at least one wiring layer.
Template layer 121 is for example formed by being selected from non-crystalline silicon, silica and any material of silicon nitride, for example, by using wait from
Daughter enhancing chemical vapor deposition (PE-CVD) is formed.E.g., about 0.2 micron to 5 microns of the thickness of template layer 121.
Using including gluing, exposed and developed photoetching process, photoresist mask is formed.It is lost via photoresist mask
It carves, template layer 121 is patterned, so as to form the first groove 131 and the second groove 121a in template layer 121.The etching example
Such as can be the dry method etch technology for using the wet etching process of etching solution or carrying out in the reactor chamber, such as etc.
Plasma.After the etching, by dissolving or being ashed removal photoresist mask in a solvent.
The first groove 131 formed in template layer 121 is used to limit the positions and dimensions of finally formed cavity.Upper
In the patterning step stated, the pattern of photoresist mask limits position and the lateral dimension of cavity, and etch depth limits cavity
Depth.In one embodiment, desired etch depth can be obtained by controlling etching period.In preferred embodiment
In, the first groove 131 penetrates template layer 121.If the second interlayer dielectric layer 108 of template layer 121 and cmos circuit 110 uses
Then in the step of etching, the second interlayer dielectric layer 108 may be used as stop-layer, etch depth in different material compositions
It is consistent with the thickness of template layer 121.Therefore, desired etch depth can be obtained by the thickness of Control architecture layer 121.
The multiple second groove 121a surrounding cavities formed in template layer 121.Second groove 121a is used for subsequent
Etched channels are provided in etch process and for accommodating the protruding portion of confining bed subsequently formed.For this purpose, second groove
121a includes and the first opening exposed on 121 surface of template layer and the second opening connected with cavity 133.For example, second
Opening is a part of side wall for removing first groove 131 and the opening formed.In above-mentioned patterning step, photoresist
The pattern of mask limits position and the lateral dimension of the second groove 121a, and etch depth limits the depth of the second groove 121a.
Then, such as by deposition, conformal stop-layer is formed on the second interlayer dielectric layer 108 and template layer 121
122, as best shown in figures 3 a and 3b.Stop-layer 122 is made of corrosion resistant material, such as by being selected from the metal material of tantalum or gold or selected from nitrogen
Change the nonmetallic materials composition of aluminium, aluminium oxide and non-crystalline silicon.The thickness of stop-layer 122 is, for example, 0.1 micron to 1 micron.
The stop-layer 122 is consistent with the surface shape of template layer 121.Therefore, after stop-layer 122 is formed, the stopping
Layer 122 is located in the bottom and side wall of the first groove 131, so as to form with the first groove 131 opening unanimously in stop-layer 122
Mouthful.Further, which is also located in the bottom and side wall of the second groove 121a, so as to be formed in stop-layer 122
The opening consistent with the second groove 121a.
Then, such as by deposition, formation sacrificial layer 123, as shown in Figs. 4a and 4b on stop-layer 122.Sacrificial layer 123
Such as be made of silica, for example, by using plasma enhanced chemical vapor deposition (PE-CVD) formation.The thickness of sacrificial layer 123
For example, 1 micron to 6 microns, so as to fill the first groove 131 and the second groove 121a that are formed in stop-layer 122.
Then, using a part for the smooth removal sacrificial layer 123 of chemical-mechanical planarization (CMP) so that only sacrificial layer
123 parts for being located inside the first groove 131 and the second groove 121a retain, and obtain smooth body structure surface, such as Fig. 5 a
Shown in 5b.
Then, such as by deposition, mask layer 124 is formed on stop-layer 122 and sacrificial layer 123, such as Fig. 6 a and 6b institutes
Show.Mask layer 124 is made of corrosion resistant material, such as by being selected from the metal material of tantalum or gold or selected from aluminium nitride, aluminium oxide and non-
The nonmetallic materials composition of crystal silicon.The thickness of mask layer 124 is, for example, 0.2 micron to 2 microns.
Then, using above-mentioned photoetching process and etch process, mask layer 124 is patterned to comprising multiple release apertures
132 mask pattern, as illustrated in figs. 7 a and 7b.Substantially 0.1 micron to 5 microns of the lateral dimension of release aperture 132.The release aperture
132 using as etchant into channel and the passing away of etch products.The multiple release apertures formed in mask layer 124
132 surrounding cavities, it is corresponding with the position of the multiple second groove 121a.That is, the multiple release aperture 132 with it is the multiple
The first opening of second groove 121a is in alignment with each other.
Then, sacrificial layer 123 is further etched via the release aperture 132 of mask layer 124, as shown in figs. 8 a and 8b.As above
Described, multiple release apertures 132 in mask layer 124 are corresponding with the position of multiple second groove 121a in template layer 121.Cause
This, in the etching step, etchant etches the portion that sacrificial layer 123 is located in the second groove 121a successively via release aperture 132
Point so that the first of the second groove 121a is open and the second open communication, and then it is recessed to be located at first for further etching sacrificial layer 123
Part in slot 131.Utilizing the selectivity of etchant so that the surface for being etched in mask layer 124 and stop-layer 122 stops, from
And sacrificial layer 123 can be removed, cavity 133 is formed in stop-layer 122.Release aperture 132 communicates with each other with cavity 133.
Preferably, it is formed using different etch process patterned mask layers 124 and in the second interlayer dielectric layer 108
Cavity 133.For example, gas phase etching work is used when forming cavity 133 using wet etching process in patterned mask layer 124
Skill.Preferably, sacrificial layer 123 is made of silica, and stop-layer 122 and mask layer 124 are made of non-crystalline silicon, then is forming cavity
The etchant used when 133 is gas HF.
Chemical reaction in the gas phase etching is：SiO2+ 4HF=SiF4+2H2O.Etch products are SiF4And water, the two are equal
For gaseous state, easily discharged from cavity.
Even if release aperture 132 is small-sized, etchant can also reach sacrificial layer 123, etching production via release aperture 132
Object can also be discharged via release aperture 132.Therefore, the size of release aperture 132 there is no is limited by etch process.By
In isotropic etching characteristic, large-sized cavity 133 can be formed via release aperture 132.
Further, since multiple release apertures 132 are distributed in the periphery of cavity 133, and be separated from each other.The distribution mode
The integrality and mechanical strength of mask layer 124 can be kept above cavity so that mask layer 124 can support what is subsequently formed
Confining bed 125.
Then, such as by deposition, confining bed 125 is formed on mask layer 124, as illustrated in figures 9 a and 9b.Confining bed 125
Such as it is made of a kind of in aluminium nitride, silica and silicon nitride.Preferably, confining bed 125 is made of aluminium nitride, such as
It is formed using physical vapour deposition (PVD) (PVD).Confining bed 125 is located at 124 top of mask layer, fills the release aperture in mask layer 124
132 so that cavity 133 is also closing.
If forming confining bed 125 under vacuum conditions, the cavity 133 formed is vacuum cavity.The cavity 133 it is interior
Wall liner has stop-layer 122 and mask layer 124, and the release gas so as to prevent interlayer dielectric layer enters in cavity.
In a kind of alternative embodiment, if there is Seed Layer, then Seed Layer can be used as insulating layer.It is replaced at another
In the embodiment in generation, additional sealant may be used instead of the closing opening of confining bed 125.The sealant can be by any materials
Composition, such as non-crystalline silicon or metal.
Preferably, the size of release aperture 132 is selected according to the deposition characteristics of confining bed 125 so that confining bed 125 is discharging
The top in hole 132 can be extended continuously.In this embodiment, the diameter of release aperture 132 is about 0.1 micron to 5 microns.Confining bed
125 are located on cavity 133, including multiple protruding portion 125a.The protruding portion 125a extends above mask layer 124, across releasing
Discharge hole 132, and the predetermined depth of 124 lower section of mask layer is reached, so as to be inserted into the second groove 121a of the template layer 121
In, so as to form embolism, to close release aperture 132.
In the method for the embodiment, it is inserted into release aperture 132 using the protruding portion of confining bed 125 and extends to template layer
In 121 the second groove 121a, so as to form embolism, with improve sealing effect and improve mechanical strength, so as to improve with CMOS
The compatibility of technique and the job stability and reliability for improving MEMS structure.
In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor.This method can be further formed more
More layers.For example, above confining bed 125, the laminated piezoelectric of ultrasonic transducer can also be further formed.In the structure
In, confining bed 125 provides mechanical support for laminated piezoelectric.The laminated piezoelectric of the ultrasonic transducer includes the seed stacked gradually
Layer, first electrode, piezoelectric layer and second electrode.The piezoelectric layer is by being selected from aluminium nitride, segregation vinyl fluoride, segregation vinyl fluoride-trifluoro
Any one composition in ethylene, lead titanate piezoelectric ceramics, lithium niobate piezoelectric ceramics.First electrode and second electrode are by arbitrary
Conductor material forms, for example, the metal selected from one of Au, Ag and Al.
In terms of the manufacturing, the manufacturing method of the MEMS component is compatible with CMOS technology, can be direct in CMOS fabrication line
Processing.In terms of the subsequent applications of MEMS component, such as when MEMS component is as ultrasonic fingerprint sensor, in subsequent movement
The application field of terminal can penetrate the media such as glass and directly apply, reduce subsequent answer without the trepanning on the media such as glass
Use cost.In terms of terminal applies, compared with capacitive fingerprint sensing device, the ultrasonic signal of ultrasonic fingerprint sensor is by oil
The influence such as dirt, sweat is small, is influenced small, the high accuracy for examination of identification with humidity by temperature.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any this practical relationship or sequence.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those
Element, but also including other elements that are not explicitly listed or further include as this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
Also there are other identical elements in process, method, article or equipment including the element.
According to the embodiment of the present invention as described above, these embodiments are there is no all details of detailed descriptionthe, also not
It is only the specific embodiment to limit the invention.Obviously, as described above, can make many modifications and variations.This explanation
Book is chosen and specifically describes these embodiments, is in order to preferably explain the principle of the present invention and practical application, belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its four corner and equivalent.
Claims (31)
1. a kind of method for manufacturing MEMS structure, including：
Form template layer；
The first groove and multiple second grooves around first groove are formed in the template layer；
Stop-layer is formed on the template layer, the stop-layer conformally covers the template layer；
Sacrificial layer is formed on the stop-layer, the sacrificial layer fills first groove and the multiple second groove；
Mask layer is formed on the stop-layer and the sacrificial layer, the mask layer covers the sacrificial layer；
Multiple release apertures are formed on the mask layer；
The sacrificial layer, which is removed, via the multiple release aperture and the multiple second groove forms cavity；And
Confining bed is formed on the mask layer, the confining bed closes the multiple release aperture,
Wherein, the multiple second groove is corresponding with the position of the release aperture, and the confining bed includes multiple protruding portion, institute
Multiple protruding portion is stated to be inserted into the multiple second groove across the multiple release aperture, it is described to close so as to form embolism
Multiple release apertures.
2. according to the method described in claim 1, wherein, first groove and the multiple second recessed is formed using etching
Slot so that first groove and the multiple second groove respectively from the surface of the template layer extend downwardly the first depth and
Second depth, wherein, first depth is more than the second depth.
3. according to the method described in claim 2, wherein, first groove penetrates the template layer, so as to which described first is deep
Degree is corresponding with the thickness of the template layer.
4. according to the method described in claim 2, wherein, the multiple second groove is respectively included in the surface of the template layer
Exposed first opening and the second opening for exposing of side wall in first groove, first opening with it is the multiple
The corresponding release aperture connection of release aperture, second opening are connected with first groove.
5. according to the method described in claim 1, further include the supporting layer to be formed and be used to support the template layer.
6. according to the method described in claim 1, wherein, the lateral dimension of the release aperture is 0.1 micron to 5 microns.
7. according to the method described in claim 1, wherein, the template layer is by being selected from metal, semiconductor, non-crystalline silicon, silica
Any material composition with silicon nitride.
8. according to the method described in claim 1, wherein, the confining bed is any by being selected from aluminium nitride, silica and silicon nitride
The material composition of kind.
9. according to the method described in claim 1, wherein, the cross sectional shape of the multiple release aperture be selected from round, ellipse,
Any one of triangle, rectangle, unfilled corner rectangle, pentagon.
10. according to the method described in claim 1, wherein, the cross sectional shape of the multiple second groove is selected from round, oval
Any one of shape, triangle, rectangle, unfilled corner rectangle, pentagon.
11. according to the method described in claim 1, also include forming laminated piezoelectric, the laminated piezoelectric on the confining bed
Including first electrode, piezoelectric layer and the second electrode stacked gradually.
12. according to the method described in claim 1, wherein, the sacrificial layer is made of silica.
13. according to the method for claim 12, wherein, the step of forming cavity, is included using gas phase etching, wherein using
Etching gas be HF.
14. according to the method for claim 13, wherein, the mask layer and the stop-layer are respectively by corrosion resistant material group
Into.
15. according to the method for claim 14, wherein, the corrosion resistant material is included selected from tantalum, gold, aluminium nitride, aluminium oxide
With any one in non-crystalline silicon.
16. a kind of MEMS structure, including：
Template layer, the template layer include the first groove for limiting cavity；
Stop-layer on the template layer, the stop-layer covers the bottom and side wall of first groove, so as to be formed
With the corresponding cavity of first groove；
Mask layer on the cavity, the mask layer include the multiple release apertures connected with the cavity；And
Confining bed on the mask layer, the confining bed close the multiple release aperture,
Wherein, the template layer further includes multiple second grooves around first groove, the multiple second groove and institute
The position for stating release aperture is corresponding, and the confining bed includes multiple protruding portion, and the multiple protruding portion passes through the multiple release
Hole is inserted into the multiple second groove, so as to form embolism to close the multiple release aperture, wherein, first groove
The first depth be more than the second groove the second depth.
17. MEMS structure according to claim 16, wherein, the multiple second groove is respectively included in the template layer
Surface exposure first opening and first groove side wall expose second opening, it is described first opening and institute
The corresponding release aperture connection of multiple release apertures is stated, second opening is connected with first groove.
18. MEMS structure according to claim 16, further includes：It is used to support the supporting layer of the template layer.
19. MEMS structure according to claim 16, wherein, first groove penetrates the template layer.
20. MEMS structure according to claim 16, wherein, the lateral dimension of the release aperture is micro- for 0.1 micron to 5
Rice.
21. MEMS structure according to claim 16, wherein, the template layer by be selected from metal, semiconductor, non-crystalline silicon,
Silica and silicon nitride it is any material composition.
22. MEMS structure according to claim 16, wherein, the mask layer and the stop-layer are respectively by corrosion resistant material
Composition.
23. MEMS structure according to claim 22, wherein, the corrosion resistant material is included selected from tantalum, gold, aluminium nitride, oxygen
Change any one in aluminium and non-crystalline silicon.
24. MEMS structure according to claim 16, wherein, the confining bed is by being selected from aluminium nitride, silica and nitridation
Any material composition of silicon.
25. MEMS structure according to claim 16, wherein, the cross sectional shape of the multiple release aperture be selected from it is round,
Any one of ellipse, triangle, rectangle, unfilled corner rectangle, pentagon.
26. MEMS structure according to claim 1, wherein, the cross sectional shape of the multiple second groove be selected from it is round,
Any one of ellipse, triangle, rectangle, unfilled corner rectangle, pentagon.
27. MEMS structure according to claim 16, further includes：Laminated piezoelectric on the confining bed.
28. MEMS structure according to claim 27, wherein, the laminated piezoelectric include the first electrode stacked gradually,
Piezoelectric layer and second electrode.
29. MEMS structure according to claim 16, further includes：It is used to support the supporting layer of the template layer.
30. a kind of MEMS component, including：
Cmos circuit；And
MEMS structure according to any one of claim 16 to 28,
Wherein, the cmos circuit is connected with the MEMS structure, for the MEMS structure provide drive signal and
Receive the detection signal of the MEMS structure.
31. a kind of MEMS component, including：
TFT circuit；And
MEMS structure according to any one of claim 16 to 29,
Wherein, the TFT circuit is connected with the MEMS structure, for selectively connecting a part for the MEMS structure
External circuit is connected to, the external circuit provides drive signal to the MEMS structure and receives the detection of the MEMS structure
Signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810015599.4A CN108147360A (en) | 2018-01-08 | 2018-01-08 | MEMS structure, MEMS component and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810015599.4A CN108147360A (en) | 2018-01-08 | 2018-01-08 | MEMS structure, MEMS component and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108147360A true CN108147360A (en) | 2018-06-12 |
Family
ID=62460794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810015599.4A Pending CN108147360A (en) | 2018-01-08 | 2018-01-08 | MEMS structure, MEMS component and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108147360A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110458135A (en) * | 2019-08-19 | 2019-11-15 | 京东方科技集团股份有限公司 | A kind of ultrasonic sensor and preparation method thereof, display device |
| CN111115555A (en) * | 2019-12-20 | 2020-05-08 | 北京航天控制仪器研究所 | Silicon groove structure for MEMS wafer-level eutectic bonding packaging and preparation method |
| CN111151431A (en) * | 2018-11-08 | 2020-05-15 | 格芯新加坡私人有限公司 | Piezoelectric micromechanical ultrasonic transducer and method for producing same |
| CN111170266A (en) * | 2019-12-31 | 2020-05-19 | 杭州士兰集成电路有限公司 | Semiconductor device and method for manufacturing the same |
| US20210294093A1 (en) * | 2020-03-19 | 2021-09-23 | Obsidian Sensors, Inc. | Active matrix programmable mirror |
| CN116199182A (en) * | 2023-04-28 | 2023-06-02 | 润芯感知科技(南昌)有限公司 | Semiconductor device and manufacturing method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200702719A (en) * | 2005-01-28 | 2007-01-16 | Seiko Epson Corp | Optical tunable filter and method of manufacturing the same |
| WO2010006065A2 (en) * | 2008-07-08 | 2010-01-14 | Wispry, Inc. | Thin-film lid mems devices and methods |
| CN102539033A (en) * | 2012-03-09 | 2012-07-04 | 上海宏力半导体制造有限公司 | Method for making micro electromechanical system pressure sensor |
| CN103063351A (en) * | 2012-12-21 | 2013-04-24 | 上海宏力半导体制造有限公司 | Micro electro mechanical system pressure sensor and manufacture method thereof and micro electro mechanical system |
| CN103196596A (en) * | 2013-03-21 | 2013-07-10 | 揣荣岩 | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof |
| CN103449358A (en) * | 2013-08-27 | 2013-12-18 | 上海先进半导体制造股份有限公司 | Manufacturing method of closed cavity of micro-electromechanical system (MEMS) |
| CN103604538A (en) * | 2013-11-29 | 2014-02-26 | 沈阳工业大学 | MEMS pressure sensor chip based on SOI technology and manufacturing method thereof |
| CN105486435A (en) * | 2016-01-04 | 2016-04-13 | 沈阳化工大学 | MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof |
| CN106932138A (en) * | 2015-12-31 | 2017-07-07 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS pressure sensor and preparation method thereof, electronic installation |
| CN107092880A (en) * | 2017-04-14 | 2017-08-25 | 杭州士兰微电子股份有限公司 | Ultrasonic fingerprint sensor and its manufacture method |
-
2018
- 2018-01-08 CN CN201810015599.4A patent/CN108147360A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200702719A (en) * | 2005-01-28 | 2007-01-16 | Seiko Epson Corp | Optical tunable filter and method of manufacturing the same |
| WO2010006065A2 (en) * | 2008-07-08 | 2010-01-14 | Wispry, Inc. | Thin-film lid mems devices and methods |
| CN102539033A (en) * | 2012-03-09 | 2012-07-04 | 上海宏力半导体制造有限公司 | Method for making micro electromechanical system pressure sensor |
| CN103063351A (en) * | 2012-12-21 | 2013-04-24 | 上海宏力半导体制造有限公司 | Micro electro mechanical system pressure sensor and manufacture method thereof and micro electro mechanical system |
| CN103196596A (en) * | 2013-03-21 | 2013-07-10 | 揣荣岩 | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof |
| CN103449358A (en) * | 2013-08-27 | 2013-12-18 | 上海先进半导体制造股份有限公司 | Manufacturing method of closed cavity of micro-electromechanical system (MEMS) |
| CN103604538A (en) * | 2013-11-29 | 2014-02-26 | 沈阳工业大学 | MEMS pressure sensor chip based on SOI technology and manufacturing method thereof |
| CN106932138A (en) * | 2015-12-31 | 2017-07-07 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS pressure sensor and preparation method thereof, electronic installation |
| CN105486435A (en) * | 2016-01-04 | 2016-04-13 | 沈阳化工大学 | MEMS polysilicon nanofilm pressure sensor chip and manufacturing method thereof |
| CN107092880A (en) * | 2017-04-14 | 2017-08-25 | 杭州士兰微电子股份有限公司 | Ultrasonic fingerprint sensor and its manufacture method |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111151431A (en) * | 2018-11-08 | 2020-05-15 | 格芯新加坡私人有限公司 | Piezoelectric micromechanical ultrasonic transducer and method for producing same |
| US11329098B2 (en) | 2018-11-08 | 2022-05-10 | Vanguard International Semiconductor Singapore Pte. Ltd. | Piezoelectric micromachined ultrasonic transducers and methods for fabricating thereof |
| CN110458135A (en) * | 2019-08-19 | 2019-11-15 | 京东方科技集团股份有限公司 | A kind of ultrasonic sensor and preparation method thereof, display device |
| CN110458135B (en) * | 2019-08-19 | 2022-04-15 | 京东方科技集团股份有限公司 | Ultrasonic sensor, preparation method thereof and display device |
| CN111115555A (en) * | 2019-12-20 | 2020-05-08 | 北京航天控制仪器研究所 | Silicon groove structure for MEMS wafer-level eutectic bonding packaging and preparation method |
| CN111115555B (en) * | 2019-12-20 | 2023-08-29 | 北京航天控制仪器研究所 | Silicon groove structure for MEMS wafer-level eutectic bonding packaging and preparation method |
| CN111170266A (en) * | 2019-12-31 | 2020-05-19 | 杭州士兰集成电路有限公司 | Semiconductor device and method for manufacturing the same |
| CN111170266B (en) * | 2019-12-31 | 2023-07-21 | 杭州士兰集成电路有限公司 | Semiconductor device and method for manufacturing the same |
| US20210294093A1 (en) * | 2020-03-19 | 2021-09-23 | Obsidian Sensors, Inc. | Active matrix programmable mirror |
| CN116199182A (en) * | 2023-04-28 | 2023-06-02 | 润芯感知科技(南昌)有限公司 | Semiconductor device and manufacturing method thereof |
| CN116199182B (en) * | 2023-04-28 | 2024-01-19 | 润芯感知科技(南昌)有限公司 | Semiconductor device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108147360A (en) | MEMS structure, MEMS component and its manufacturing method | |
| US10272470B2 (en) | CMOS ultrasonic transducers and related apparatus and methods | |
| TWI254343B (en) | Electronic component, electronic component module and method of manufacturing the electronic component | |
| EP2011132B1 (en) | Capacitive micro- electro- mechanical sensors with single crystal silicon electrodes | |
| US7402907B2 (en) | Semiconductor device and manufacturing method thereof | |
| EP1860418A1 (en) | A method for fabricating a pressure sensor using SOI wafers | |
| CN111523436B (en) | Ultrasonic fingerprint identification pixel structure, chip and electronic equipment | |
| TWI664755B (en) | Integration of ain ultrasonic transducer on a cmos substrate using fusion bonding process | |
| US20110150261A1 (en) | Capacitive transducer and fabrication method | |
| US9787280B2 (en) | Acoustic resonator and method of manufacturing the same | |
| US8199963B2 (en) | Microphone arrangement and method for production thereof | |
| US10979840B2 (en) | Method for manufacturing MEMS microphone | |
| JP2006289520A (en) | Semiconductor device using mems technology | |
| US8716816B2 (en) | SOI-based CMUT device with buried electrodes | |
| TWI712190B (en) | Wafer scale ultrasonic sensing device and manufacation method thereof | |
| CN206838450U (en) | Ultrasonic transducer | |
| US11203522B2 (en) | Sidewall stopper for MEMS device | |
| CN103379392A (en) | Capacitive ultrasonic sensor chip and manufacturing method thereof | |
| CN108121976A (en) | Closed cavity structure and its manufacturing method and ultrasonic fingerprint sensor | |
| CN207780806U (en) | Closed cavity structure and ultrasonic fingerprint sensor | |
| CN206991333U (en) | Ultrasonic fingerprint sensor | |
| US11516596B2 (en) | MEMS device and manufacturing method thereof | |
| CN208429862U (en) | MEMS structure, MEMS component | |
| EP3290389A1 (en) | Method for reducing cracks in a step-shaped cavity | |
| CN109665488A (en) | MEMS device and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180612 |