CN208429862U - MEMS structure, MEMS component - Google Patents

Abstract

This application discloses MEMS structures, MEMS component.It include: template layer, the template layer includes the first groove for limiting cavity；Stop-layer on the template layer；Mask layer on the cavity；Confining bed on the mask layer, the confining bed closes the multiple relief hole, wherein, the template layer further includes multiple second grooves around first groove, the multiple second groove is corresponding with the position of the relief hole, the confining bed includes multiple protruding portion, wherein, first depth of first groove is greater than the second depth of the second groove, wherein, multiple second grooves are corresponding with the position of relief hole, confining bed includes multiple protruding portion, multiple protruding portion passes through multiple relief holes and is inserted into multiple second grooves, to form embolism to close multiple relief holes.Relief hole and closed cavity are filled using embolism structure, to improve the job stability and reliability of MEMS structure.

Description

MEMS structure, MEMS component

Technical field

The utility model relates to MEMS (MEMS) technologies, more particularly, to MEMS structure, MEMS component.

Background technique

MEMS (MEMS) is the microsystem formed on a semiconductor substrate using the techniques such as photoetching and etching. Include the micro-structures such as cavity, electrode inside MEMS structure, has derived a plurality of types of products, including accelerometer, pressure Sensor, humidity sensor, fingerprint sensor, gyroscope, microphone, motor, Micropump etc..

With the development of the mobile terminals such as mobile phone, fingerprint sensor is had been widely used.Fingerprint refers to the finger of people The lines of the convex injustice of the positive surface skin fovea superior in end, the regular arrangement of lines form different line types.Fingerprint recognition, which refers to, passes through ratio The details of more different fingerprints carry out identity authentication.Due to unchangeable property, uniqueness and convenience, fingerprint knowledge Other application is more and more extensive.Fingerprint sensor is, for example, the MEMS structure for including piezoelectric material, utilizes the inverse pressure of piezoelectric material Electrical effect generates ultrasonic wave.The ultrasonic wave shows different reflectivity and thoroughly when touching fingerprint in the ridge of fingerprint, valley Penetrate rate.Finger print information can be read by the ultrasonic beam signal scanned in certain area.

Further, fingerprint sensor can be MEMS component, the MEMS structure including integrating and CMOS electricity Road.Ultrasonic wave, CMOS circuit are used to provide driving signal and processing detection for MEMS structure MEMS structure for transmitting and receiving Signal.Eutectic bonding is the effective ways of integrated CMOS circuit and MEMS structure.But bonding can be generated in bonding process Slurry overflow phenomena leads to the structure member short circuit of tube core and fails, yield greatly reduces.Meanwhile bonding technology is aligned Precision is not high, larger so as to cause the size for the eutectic bonding of electrical connection point, improves manufacturing cost.Using bonding work Skill integrated CMOS circuit and MEMS structure lead to manufacturing process complication, high cost and low yield.

In improved method, MEMS structure can be directly made on cmos circuit.However, due on cmos circuit The lamination of MEMS structure is formed, therefore, formation cavity is extremely difficult in MEMS structure, is especially difficult to be accurately defined cavity Size.For example, the MEMS structure can only provide a Free Surface along stacking direction always, thus forming cavity It is only capable of in step in the Free Surface upper opening, to limit technique freedom degree.In addition, cmos circuit itself includes multiple Interlayer dielectric layer, wherein contain a large amount of gas, such as Ar, H2, in the step of forming cavity or later, gas release Into cavity, deteriorated so as to cause the mechanical performance and acoustical behavior of cavity.

Therefore, it is desirable to which the cavity forming method being further improved in MEMS structure is to improve the compatibility with CMOS technology With the job stability and reliability for improving MEMS structure.

Utility model content

In view of this, the purpose of the utility model is to provide MEMS structure, MEMS component and its manufacturing methods, wherein adopt Embolism structure filling relief hole and closed cavity are formed with the protruding portion of confining bed, to improve the job stability of MEMS structure And reliability.

According to a kind of MEMS structure provided by the utility model, comprising: template layer, the template layer include for limiting sky First groove of chamber；Stop-layer on the template layer, the stop-layer cover the bottom and side wall of first groove, To form the cavity corresponding with first groove；Mask layer on the cavity, the mask layer include The multiple relief holes being connected to the cavity；And the confining bed on the mask layer, the confining bed closing are described more A relief hole, wherein the template layer further includes multiple second grooves around first groove, the multiple second groove Corresponding with the position of the relief hole, the confining bed includes multiple protruding portion, and the multiple protruding portion passes through the multiple Relief hole is inserted into the multiple second groove, to form embolism to close the multiple relief hole, wherein described first First depth of groove is greater than the second depth of the second groove.

Preferably, wherein the multiple second groove is respectively included in the first opening of the surface exposure of the template layer, And the second opening of the side wall exposure in first groove, first opening are one corresponding to the multiple relief hole Relief hole connection, second opening are connected to first groove.

Preferably, further includes: be used to support the supporting layer of the template layer.

Preferably, wherein first groove penetrates the template layer.

Preferably, wherein the lateral dimension of the relief hole is 0.1 micron to 5 microns.

Preferably, wherein the template layer is by any selected from metal, semiconductor, amorphous silicon, silica and silicon nitride Material composition.

Preferably, wherein the mask layer and the stop-layer are made of corrosion resistant material respectively.

Preferably, wherein the corrosion resistant material includes any one in tantalum, gold, aluminium nitride, aluminium oxide and amorphous silicon Kind.

Preferably, wherein the confining bed selected from aluminium nitride, silica and any material of silicon nitride by forming.

Preferably, the cross sectional shape of the multiple relief hole is in circle, ellipse, triangle, rectangle, pentagon It is any.

Preferably, wherein the cross sectional shape of the multiple second groove be selected from circle, ellipse, triangle, rectangle, Any one of pentagon.

Preferably, further includes: the laminated piezoelectric on the confining bed.

Preferably, wherein the laminated piezoelectric includes the first electrode stacked gradually, piezoelectric layer and second electrode.

According to another MEMS component provided by the utility model, comprising: cmos circuit；And according to described above MEMS structure, wherein the cmos circuit is connected with the MEMS structure, for providing driving letter to the MEMS structure Number and receive the detection signal of the MEMS structure.

According to another MEMS component provided by the utility model, comprising: TFT circuit；And according to described above MEMS structure, wherein the TFT circuit is connected with the MEMS structure, for selectively by the one of the MEMS structure It is partially attached to external circuit, the external circuit provides driving signal to the MEMS structure and receives the MEMS structure Detection signal.

The MEMS structure of the utility model limits the size of cavity using the first groove in template layer, using confining bed In multiple protruding portion insertion mask layer in relief hole and template layer the second groove in, it is close to improve to form embolism Seal effect and improve mechanical strength, so as to improve with CMOS technology compatibility and raising MEMS structure job stability and Reliability.

In a preferred embodiment, multiple second grooves are distributed in the periphery of cavity, to maintain the integrality of mask layer And mechanical strength, allow the mask layer to support confining bed.

This method can obtain of uniform size and accurate vacuum cavity, and can use stop-layer and mask layer isolation The gas of interlayer dielectric layer release in cmos circuit, further improves the compatibility with CMOS technology.The MEMS structure can be with It is formed together MEMS component, such as ultrasonic fingerprint sensor with cmos circuit, can be improved fingerprint sensor working frequency Stability and dependability.

Detailed description of the invention

By referring to the drawings to the description of the utility model embodiment, above-mentioned and other mesh of the utility model , feature and advantage will be apparent from, in the accompanying drawings:

Fig. 1 a to 1c be shown respectively in the MEMS component according to the utility model embodiment the bottom view of confining bed and The sectional view of the different location of MEMS component；

Fig. 2 a and 2b to 9a and 9b shows the manufacturing method different phase according to the MEMS component of the utility model embodiment Sectional view.

Specific embodiment

Hereinafter reference will be made to the drawings is more fully described the utility model.In various figures, identical element is using similar Appended drawing reference indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to be not shown Certain well known parts.

Many specific details of the utility model, such as the structure of device, material, size, place are described hereinafter Science and engineering skill and technology, to be more clearly understood that the utility model.But just as the skilled person will understand, The utility model can not be realized according to these specific details.

In the following description, term " MEMS component " indicates that cmos circuit and MEMS structure integrate to be formed Component.In an example, MEMS component is, for example, the ultrasonic sensor for including cmos circuit and ultrasonic transducer.So And the embodiments of the present invention are not limited to MEMS component and are the situation of ultrasonic sensor, but may adapt to any packet It includes the MEMS structure of cavity and its integrates the MEMS component to be formed with cmos circuit.

The utility model can be presented in a variety of manners, some of them example explained below.

Fig. 1 a to 1c be shown respectively in the MEMS component according to the utility model embodiment the bottom view of confining bed and The sectional view of the different location of MEMS component.Show the confining bed 125 in MEMS component in fig 1 a, the bottom view be from The view that substrate is observed to confining bed.

As shown in Figure 1a, in MEMS component 100, confining bed 125 is used for closed cavity.In fig 1 a by confining bed 125 It is separately shown.However, it is to be appreciated that confining bed 125 is only a part of total in final MEMS component 100 And it is located above cavity.

Confining bed 125 includes the multiple protruding portion 125a extended in relief hole, as embolism, for closing relief hole. The position of the multiple protruding portion 125a is corresponding with relief hole, that is, is separated from each other and is distributed in the periphery of cavity.In fig 1 a Line AA and BB the different interception positions of subsequent sectional view are shown, wherein line AA is without protruding portion 125a, and line BB is then by prominent Portion 125a out.

Fig. 1 b and 1c be shown respectively along AA and line BB sectional view.As shown, MEMS component 100 includes stacking Cmos circuit 110 and MEMS structure 120.

The cmos circuit 110 includes multiple transistors that at least part is formed in P type substrate 101, and described The multiple wiring layers and multiple interlayer dielectric layers stacked gradually above multiple transistors.As an example, being shown in Fig. 1 b and 1c Only one P-type transistor and only one N-type transistor, the first interlayer dielectric layer 106, the first wiring layer 107 and the second layer Between dielectric layer 108.N-type well region 102 is formed in P type substrate 101.Then, P-type transistor is formed in N-type well region 102 Source/drain region 103.The source/drain region 104 of N-type transistor is formed in P type substrate 101.In P type substrate 101 and N-type well region 102 It is upper to form the gate-dielectric 111 and grid conductor 105 stacked gradually.In P-type transistor, grid conductor 105 and N-type well region It is separated between 102 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region, so that N-type trap Area 102 is located at a part of 105 lower section of grid conductor as channel region.In N-type transistor, grid conductor 105 and p-type are served as a contrast It is separated between bottom 101 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region, so that p-type serves as a contrast Bottom 101 is located at a part of 105 lower section of grid conductor as channel region.The source/drain region 103 of P-type transistor and N-type transistor Source/drain region 104 and grid conductor 105 can be electrically connected via conductive channel with the first wiring layer 107.

The MEMS structure 120 include positioned at the top of the second interlayer dielectric layer 108 of cmos circuit 110 template layer 121, Stop-layer 122, mask layer 124 and confining bed 125.Template layer 121 is located on the second interlayer dielectric layer 108 and including first Groove 131, the stop-layer 122 conformally cover the template layer 121, to form cavity in first groove 131 133.The first groove 131 in template layer 121 is used to limit the positions and dimensions of cavity, so as to accurately control cavity Lateral dimension and longitudinal size.Mask layer 124 includes relief hole 132, which is used for the forming process in cavity 133 It is middle provide etchant into channel and the passing away of etch products.The cross sectional shape of relief hole 132 is selected from round, ellipse Any one of circle, triangle, rectangle, unfilled corner rectangle, pentagon.In a preferred embodiment, the transverse direction of relief hole 132 Substantially 0.1 micron to 5 microns of size.The stop-layer 122 and the common surrounding cavity 133 of mask layer 124.

Confining bed 125 is located on cavity 133, including multiple protruding portion 125a, for closing relief hole 132.It is the multiple The position of protruding portion 125a is corresponding with the position of relief hole 132, that is, is separated from each other and is distributed in the periphery of cavity.The distribution side Formula can keep the integrality and mechanical strength of mask layer 124 above cavity, and mask layer 124 is allowed to support confining bed 125.The protruding portion 125a extends above mask layer 124, passes through relief hole 132, and reaches 124 lower section of mask layer Predetermined depth.

Template layer 121 includes multiple second groove 121a, is respectively used to accommodate the lower part of the multiple protruding portion 125a. The cross sectional shape of second groove 121a is any in circle, ellipse, triangle, rectangle, unfilled corner rectangle, pentagon Kind.The second groove 121a includes the corresponding with relief hole 132 first the second opening for being open and being connected to cavity 133. Such as second opening is the opening for removing a part of side wall of first groove 131 and being formed.The multiple protruding portion 125a passes through relief hole 132 and is inserted into the second groove 121a, so that embolism is formed, to close relief hole 132.

In the above-described embodiment, MEMS component 100 includes the cmos circuit 110 stacked gradually and MEMS structure 120, Cavity 133 is formed in MEMS structure 120.Cavity is formed using template layer 121 and stop-layer 122, can not only reduce cavity The difficulty of formation, and can more accurately limit the size of cavity.Relief hole is inserted into simultaneously using the protruding portion of confining bed 125 And extend in the second groove of template layer 121, so that embolism is formed, to improve sealing effect and improve mechanical strength, thus Improve the compatibility with CMOS technology and improves the job stability and reliability of MEMS structure.

In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor, and MEMS structure 120 can also include More layers.For example, the laminated piezoelectric of ultrasonic transducer can also be further formed above confining bed 125.In the structure In, confining bed 125 provides mechanical support for laminated piezoelectric.

The laminated piezoelectric of the ultrasonic transducer includes the seed layer stacked gradually, first electrode, piezoelectric layer and the second electricity Pole.It, can be using the release in seed layer closing mask layer 124 if forming seed layer in an alternative embodiment Hole 132, to save the confining bed independently formed.Further, MEMS component 100 further includes for by 110 He of cmos circuit The first contact and the second contact that MEMS structure 120 is electrically connected to each other.First contact is connected to via the through-hole for passing through piezoelectric layer First electrode below piezoelectric layer, second connects to second electrode.First contact and the second contact are via from piezoelectricity The through-hole that layer reaches the first wiring layer is connected to the first wiring layer.Therefore, the piezoelectric layer in ultrasonic transducer two opposite tables First electrode and second electrode on face are utilized respectively the first contact and second and connect to below ultrasonic transducer Cmos circuit.

In the above-described embodiment, MEMS structure 120 is formed in the top of cmos circuit 110.In the implementation that one substitutes In example, CMOS circuit can be substituted using thin film transistor (TFT) (TFT) circuit.TFT circuit is for example including glass substrate and thereon The multiple TFT formed.Multiple TFT in TFT circuit can be used as switch, be connected respectively with the pixel unit in CMOS structure It connects, obtains sensing signal from pixel unit to pixel unit, or selectively to selectively provide driving signal.Another In one alternative embodiment, cmos circuit can be substituted using insulating substrate.In this embodiment, insulating substrate is MEMS knot Structure provides support, and MEMS component mainly realizes the relevant function of MEMS structure, and using external circuit provide driving signal and Signal processing function.

Fig. 2 a and 2b to 9a and 9b shows the manufacturing method different phase according to the MEMS component of the utility model embodiment Sectional view, wherein Fig. 2 a to 9a be respectively along Fig. 1 a middle line AA interception sectional view, Fig. 2 b to 9b is along Fig. 1 a respectively The sectional view of line BB interception.

Template layer 121 is formed on cmos circuit 110, as shown in figures 2 a and 2b.It is used to form the technique of cmos circuit 110 Be it is known, this will not be detailed here.

The cmos circuit is for example including the multiple transistors being formed in P type substrate 101 at least partially, and described The first interlayer dielectric layer 106, the first wiring layer 107 and the second interlayer dielectric layer 108 stacked gradually above multiple transistors.Make For example, only one P-type transistor and only one N-type transistor are shown in Fig. 3 a.N-type is formed in P type substrate 101 Well region 102.Then, the source/drain region 103 of P-type transistor is formed in N-type well region 102.It is brilliant that N-type is formed in P type substrate 101 The source/drain region 104 of body pipe.The gate-dielectric 111 and grid stacked gradually is formed in P type substrate 101 and N-type well region 102 Conductor 105.In P-type transistor, separated between grid conductor 105 and N-type well region 102 by gate-dielectric 111, grid conductor 105 are laterally extended between adjacent source/drain region, so that N-type well region 102 is located at a part of conduct of 105 lower section of grid conductor Channel region.In N-type transistor, separated between grid conductor 105 and P type substrate 101 by gate-dielectric 111, grid conductor 105 are laterally extended between adjacent source/drain region, so that P type substrate 101 is located at a part of conduct of 105 lower section of grid conductor Channel region.The source/drain region 103 of P-type transistor and the source/drain region 104 of N-type transistor and grid conductor 105 can be via leading Electric channel is electrically connected with the first wiring layer 107.

In alternate embodiments, the transistor in cmos circuit 110 is not limited to two, but may include at least one Transistor, the interlayer dielectric layer in cmos circuit 110 may include at least one interlayer dielectric layer not only in two, Wiring layer in cmos circuit 110 is not limited to one, but may include at least one wiring layer.

Template layer 121 for example by being formed selected from amorphous silicon, silica and any material of silicon nitride, for example, by using it is equal from Daughter enhances chemical vapor deposition (PE-CVD) and is formed.E.g., about 0.2 micron to 5 microns of the thickness of template layer 121.

Using the photoetching process for including gluing, exposure and imaging, photoresist mask is formed.It is lost via photoresist mask It carves, template layer 121 is patterned, to form the first groove 131 and the second groove 121a in template layer 121.The etching example It such as can be the wet etching process using etching solution, or the dry method etch technology carried out in the reactor chamber, such as etc. Plasma.After the etching, by dissolving or being ashed removal photoresist mask in a solvent.

The first groove 131 formed in template layer 121 is used to limit the positions and dimensions of finally formed cavity.Upper In the patterning step stated, the pattern of photoresist mask limits position and the lateral dimension of cavity, and etch depth limits cavity Depth.In one embodiment, desired etch depth can be obtained by control etching period.In preferred embodiment In, the first groove 131 penetrates template layer 121.If the second interlayer dielectric layer 108 of template layer 121 and cmos circuit 110 is adopted It is formed with different materials, then in the step of etching, stop-layer can be used as using the second interlayer dielectric layer 108, etching is deep It spends consistent with the thickness of template layer 121.Therefore, desired etching can be obtained by controlling the thickness of template layer 121 deeply Degree.

The multiple second groove 121a surrounding cavities formed in template layer 121.Second groove 121a is used for subsequent Etched channels, and the protruding portion for accommodating the confining bed subsequently formed are provided in etch process.For this purpose, second groove The first the second opening for being open and being connected to cavity 133 that 121a includes and exposes on 121 surface of template layer.For example, second Opening is a part of side wall for removing first groove 131 and the opening formed.In above-mentioned patterning step, photoresist The pattern of mask limits position and the lateral dimension of the second groove 121a, and etch depth limits the depth of the second groove 121a.

Then, such as by deposition, conformal stop-layer is formed on the second interlayer dielectric layer 108 and template layer 121 122, as best shown in figures 3 a and 3b.Stop-layer 122 is made of corrosion resistant material, such as by the metal material selected from tantalum or gold or is selected from nitrogen Change the nonmetallic materials composition of aluminium, aluminium oxide and amorphous silicon.The thickness of stop-layer 122 is, for example, 0.1 micron to 1 micron.

The stop-layer 122 is consistent with the surface shape of template layer 121.Therefore, after forming stop-layer 122, the stopping Layer 122 is located in the bottom and side wall of the first groove 131, to be formed in stop-layer 122 and the first groove 131 is consistent opens Mouthful.Further, which is also located in the bottom and side wall of the second groove 121a, thus the shape in stop-layer 122 At with the second consistent opening of groove 121a.

Then, such as by deposition, sacrificial layer 123 is formed on stop-layer 122, as shown in Figs. 4a and 4b.Sacrificial layer 123 are for example made of silica, are formed for example, by using plasma enhanced chemical vapor deposition (PE-CVD).Sacrificial layer 123 Thickness is, for example, 1 micron to 6 microns, so as to fill the first groove 131 and the second groove that are formed in stop-layer 122 121a。

Then, using a part of the smooth removal sacrificial layer 123 of chemical-mechanical planarization (CMP), so that only sacrificial layer 123 parts for being located inside the first groove 131 and the second groove 121a retain, and obtain smooth body structure surface, such as Fig. 5 a With shown in 5b.

Then, such as by deposition, mask layer 124 is formed on stop-layer 122 and sacrificial layer 123, such as Fig. 6 a and 6b institute Show.Mask layer 124 is made of corrosion resistant material, such as by the metal material selected from tantalum or gold or selected from aluminium nitride, aluminium oxide and non- The nonmetallic materials of crystal silicon form.The thickness of mask layer 124 is, for example, 0.2 micron to 2 microns.

Then, using above-mentioned photoetching process and etch process, mask layer 124 is patterned to comprising multiple relief holes 132 mask pattern, as illustrated in figs. 7 a and 7b.Substantially 0.1 micron to 5 microns of the lateral dimension of relief hole 132.The relief hole 132 by as etchant into channel and the passing away of etch products.The multiple relief holes formed in mask layer 124 132 surrounding cavities, it is corresponding with the position of the multiple second groove 121a.That is, the multiple relief hole 132 with it is the multiple The first opening of second groove 121a is in alignment with each other.

Then, sacrificial layer 123 is further etched via the relief hole 132 of mask layer 124, as shown in figs. 8 a and 8b.As above Described, multiple relief holes 132 in mask layer 124 are corresponding with the position of multiple second groove 121a in template layer 121.Cause This, in the etching step, etchant successively etches sacrificial layer 123 and is located at the portion in the second groove 121a via relief hole 132 Point, so that the first opening of the second groove 121a and the second open communication, then further etching sacrificial layer 123 is located at first Part in groove 131.Using the selectivity of etchant, so that the surface for being etched in mask layer 124 and stop-layer 122 stops, So as to remove sacrificial layer 123, cavity 133 is formed in stop-layer 122.Relief hole 132 communicates with each other with cavity 133.

Preferably, it is formed using different etch process patterned mask layers 124 and in the second interlayer dielectric layer 108 Cavity 133.For example, using wet etching process in patterned mask layer 124, gas phase etching work is used when forming cavity 133 Skill.Preferably, sacrificial layer 123 is made of silica, and stop-layer 122 and mask layer 124 are made of amorphous silicon, then is forming cavity The etchant used when 133 is gas HF.

Chemical reaction in the gas phase etching are as follows: SiO₂+ 4HF=SiF₄+2H₂O.Etch products are SiF₄And water, the two It is gaseous state, is easy to be discharged from cavity.

Even if relief hole 132 is small-sized, etchant can also reach sacrificial layer 123 via relief hole 132, and etching produces Object can also be discharged via relief hole 132.Therefore, the size of relief hole 132 there is no the limitation by etch process.By In isotropic etching characteristic, large-sized cavity 133 can be formed via relief hole 132.

Further, it since multiple relief holes 132 are distributed in the periphery of cavity 133, and is separated from each other.The distribution mode Integrality and mechanical strength that mask layer 124 can be kept above cavity supports mask layer 124 and subsequently forms Confining bed 125.

Then, such as by deposition, confining bed 125 is formed on mask layer 124, as illustrated in figures 9 a and 9b.Confining bed 125 selected from one of aluminium nitride, silica and silicon nitride for example by forming.Preferably, confining bed 125 is made of aluminium nitride, It is formed for example, by using physical vapour deposition (PVD) (PVD).Confining bed 125 is located at 124 top of mask layer, fills releasing in mask layer 124 Discharge hole 132, so that cavity 133 is also closed.

If forming confining bed 125 under vacuum conditions, the cavity 133 formed is vacuum cavity.The cavity 133 it is interior Wall liner has stop-layer 122 and mask layer 124, so as to prevent the release gas of interlayer dielectric layer from entering in cavity.

In a kind of alternative embodiment, if there is seed layer, then seed layer can be used as insulating layer.It replaces at another In the embodiment in generation, the closing opening of confining bed 125 can be replaced using additional sealant.The sealant can be by any material Material composition, such as amorphous silicon or metal.

Preferably, the size that relief hole 132 is selected according to the deposition characteristics of confining bed 125, so that confining bed 125 is discharging The top in hole 132 can be extended continuously.In this embodiment, the diameter of relief hole 132 is about 0.1 micron to 5 microns.Closing Layer 125 is located on cavity 133, including multiple protruding portion 125a.The protruding portion 125a extends above mask layer 124, passes through Relief hole 132, and the predetermined depth of 124 lower section of mask layer is reached, to be inserted into the second groove of the template layer 121 In 121a, so that embolism is formed, to close relief hole 132.

In the method for the embodiment, relief hole 132 is inserted into using the protruding portion of confining bed 125 and extends to template layer In 121 the second groove 121a, to form embolism, to improve sealing effect and improve mechanical strength, so as to improve with CMOS The compatibility of technique and the job stability and reliability for improving MEMS structure.

In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor.This method can be further formed more More layers.For example, the laminated piezoelectric of ultrasonic transducer can also be further formed above confining bed 125.In the structure In, confining bed 125 provides mechanical support for laminated piezoelectric.The laminated piezoelectric of the ultrasonic transducer includes the seed stacked gradually Layer, first electrode, piezoelectric layer and second electrode.The piezoelectric layer is by being selected from aluminium nitride, segregation vinyl fluoride, segregation vinyl fluoride-trifluoro Any one composition during ethylene, lead titanate piezoelectric ceramics, lithium niobate piezoelectric are ceramic.First electrode and second electrode are by any Conductor material composition, for example, the metal selected from one of Au, Ag and Al.

In terms of the manufacturing, the manufacturing method of the MEMS component is compatible with CMOS technology, can be direct in CMOS fabrication line Processing.In terms of the subsequent applications of MEMS component, such as when MEMS component is as ultrasonic fingerprint sensor, in subsequent shifting The application field of dynamic terminal is not necessarily to the aperture on the media such as glass, can penetrate the media such as glass and directly apply, reduce subsequent Application cost.In terms of terminal applies, compared with capacitive fingerprint sensing device, the ultrasonic signal of ultrasonic fingerprint sensor by The influence such as greasy dirt, sweat is small, is influenced small, the high accuracy for examination of identification with humidity by temperature.

It should be noted that herein, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that There is also other identical elements in process, method, article or equipment including the element.

It is as described above according to the embodiments of the present invention, these embodiments details all there is no detailed descriptionthe, Also not limiting the utility model is only the specific embodiment.Obviously, as described above, many modification and change can be made Change.These embodiments are chosen and specifically described to this specification, is in order to preferably explain the principles of the present invention and actually to answer With so that skilled artisan be enable to utilize the utility model and repairing on the basis of the utility model well Change use.The utility model is limited only by the claims and their full scope and equivalents.

Claims (15)

1. a kind of MEMS structure, comprising:

Template layer, the template layer include the first groove for limiting cavity；

Stop-layer on the template layer, the stop-layer covers the bottom and side wall of first groove, to be formed The cavity corresponding with first groove；

Mask layer on the cavity, the mask layer include the multiple relief holes being connected to the cavity；And

Confining bed on the mask layer, the confining bed close the multiple relief hole,

It is characterized in that, the template layer further includes multiple second grooves around first groove, the multiple second is recessed Slot is corresponding with the position of the relief hole, and the confining bed includes multiple protruding portion, and the multiple protruding portion passes through described more A relief hole is inserted into the multiple second groove, to form embolism to close the multiple relief hole, wherein described First depth of one groove is greater than the second depth of the second groove.

2. MEMS structure according to claim 1, which is characterized in that the multiple second groove is respectively included in the mould First opening of the surface exposure of plate layer, and the second opening of the side wall exposure in first groove, first opening Relief hole connection corresponding to the multiple relief hole, second opening are connected to first groove.

3. MEMS structure according to claim 1, which is characterized in that further include: it is used to support the support of the template layer Layer.

4. MEMS structure according to claim 1, which is characterized in that first groove penetrates the template layer.

5. MEMS structure according to claim 1, which is characterized in that the lateral dimension of the relief hole is 0.1 micron to 5 Micron.

6. MEMS structure according to claim 1, which is characterized in that the template layer is by being selected from metal, semiconductor, amorphous Silicon, silica and silicon nitride it is any material composition.

7. MEMS structure according to claim 1, which is characterized in that the mask layer and the stop-layer are respectively by anti-corrosion Material composition.

8. MEMS structure according to claim 7, which is characterized in that the corrosion resistant material includes being selected from tantalum, gold, nitridation Any one in aluminium, aluminium oxide and amorphous silicon.

9. MEMS structure according to claim 1, which is characterized in that the confining bed by selected from aluminium nitride, silica and Any material composition of silicon nitride.

10. MEMS structure according to claim 1, which is characterized in that the cross sectional shape of the multiple relief hole be selected from Any one of circle, ellipse, triangle, rectangle, pentagon.

11. MEMS structure according to claim 1, which is characterized in that the cross sectional shape of the multiple second groove is choosing From any one of circle, ellipse, triangle, rectangle, pentagon.

12. MEMS structure according to claim 1, which is characterized in that further include: the piezo stack on the confining bed Layer.

13. MEMS structure according to claim 12, which is characterized in that the laminated piezoelectric includes first stacked gradually Electrode, piezoelectric layer and second electrode.

14. a kind of MEMS component, comprising:

Cmos circuit；And

MEMS structure according to any one of claim 1 to 13,

It is characterized in that, the cmos circuit is connected with the MEMS structure, for providing driving letter to the MEMS structure Number and receive the detection signal of the MEMS structure.

15. a kind of MEMS component, comprising:

TFT circuit；And

MEMS structure according to any one of claim 1 to 13,

It is characterized in that, the TFT circuit is connected with the MEMS structure, for selectively by the one of the MEMS structure It is partially attached to external circuit, the external circuit provides driving signal to the MEMS structure and receives the MEMS structure Detection signal.