CN105000529B - Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof - Google Patents
Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof Download PDFInfo
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- CN105000529B CN105000529B CN201510353479.1A CN201510353479A CN105000529B CN 105000529 B CN105000529 B CN 105000529B CN 201510353479 A CN201510353479 A CN 201510353479A CN 105000529 B CN105000529 B CN 105000529B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000005516 engineering process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 238000002360 preparation method Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to a pressure sensor chip of various pressure forms based on MEMS (Micro Electro Mechanical System) technology and a manufacturing method thereof. In the manufacturing process of the pressure sensor chip, the product range is determined by means of a surface micromechanical machining process, and whether subsequent procedures are needed or not can be selected with the same surface process in order to manufacture pressure sensor chips of sealing gauge pressures, gauge pressures and absolute pressures respectively. For a large-range product, the chip size can be up to 0.6mm. A piezoresistor is a polysilicon resistor with low temperature drift and high temperature resistance. Mass blocks are designed on sensitive films, so that the phenomenon of release adhesion can be prevented, and meanwhile the overload capability of the pressure sensor can be enhanced. The mass blocks are positioned in the stress matching area of the piezoresistor, so that the sensitivity and linearity of the pressure sensor can be enhanced. The pressure sensor chip based on the MEMS technology related to the invention is simple in process, small in chip size, low in cost and high in production efficiency, temperature characteristic and static puncture resistance, and can be applied to various high temperature resistance fields.
Description
Technical field
The present invention relates to mems design and field of semiconductor processing, specially a kind of many pressure pattern based on mems technique
Pressure sensor chip and preparation method thereof.
Background technology
" the transducer market depth investigation of 2014-2019 China and investment landscape assessment that China's Industry Information Network is issued
Ask report " point out: in recent years, global transducer market is always maintained at rapid growth, and 2009 and 2010 annual growth rates reach
More than 20%, being glided by global economy within 2011 is affected, the downslide 5% in 2010 of transducer market speed increasing ratio, and market scale is
82800000000 dollars.With the progressively recovery of world market, global transducer market scale has reached 95,200,000,000 dollars within 2012, and 2013
Year is about 105,500,000,000 dollars.In future, with the lasting improvement of economic environment, market will be on the increase to the demand of sensor, according to
Prediction, coming years whole world transducer market will keep more than 20% growth rate, and market scale will break through 1500 within 2015
Hundred million dollars.And at present, flow transducer, pressure transducer, the market scale maximum of temperature sensor, wherein, pressure passes
Sensor accounts for the 18% about of the market share.
Silicon piezoresistance type pressure sensor is one kind of pressure transducer, and most of silicon piezoresistance type pressure sensors are all adopted at present
With the preparation of mems bulk silicon micromachining technique, pass through the plane ic technique such as oxidation, photoetching, ion implanting in silicon chip surface and prepare
After going out presser sensor resistance and metal interconnecting line, carry out anisotropic wet corrosion from silicon chip back side, by adjustment corrosion speed
Rate and the thickness of time control pressure sensitive membrane, need after etching to be bonded with glass, as the supporting construction of chip.
Thickness evenness using the pressure transducer pressure sensitive film of above-mentioned technique preparation is poor, and chip volume is big, and yield rate is low, performance
Unstable, high cost.
Pressure transducer according to the present invention adopts surface micromachined technique to prepare, and can avoid body silicon color sensor
Preparation sealing gauge sensor chip, adds that icp and silicon on glass bonding technique can realize gauge pressure and absolutely in same design
The preparation of pressure chip；The polysilicon being deposited using lpcvd, as varistor, can improve operating temperature range.The present invention relates to
Pressure transducer technique realize upper simpler, integrated beneficial to sensor and follow-up signal testing circuit, realize electromechanics one
Body, and contribute to the reduction of sensor cost.
Content of the invention
The invention provides a kind of many pressure pattern pressure sensor chip based on mems technique and preparation method thereof, with
A set of domain can realize sealing the chip preparation of gauge pressure, gauge pressure and three kinds of pressure pattern of absolute pressure simultaneously；4 layers of composite membrane pass through suitably
Thickness Matching and annealing, it is possible to decrease the residual stress of pressure sensitive film；Prepare mass in sensitive membrane, prevent release viscous
Even phenomenon, and improve cell overload ability and the linearity；Polysilicon resistance is produced on the top layer silicon nitride of composite membrane, nitridation
Silicon can play the effect of shielding charged ion, and forms soi structure, improves the operating temperature range of chip.
Specifically, technical scheme is as follows:
A kind of based on mems operation pressure sensor chip it is characterised in that: include multilayer pressure sensitive membrane, form this many
Varistor 11 above stressor layer sensitive membrane, described varistor 11 forms wheatstone bridge configuration；It is formed at described multilamellar
Mass 6 below pressure sensitive film, this mass prevents adhesion phenomenon, and improve described pressure transducer overload capacity and
The linearity.
Further, described multilayer pressure sensitive membrane includes silicon nitride layer 5, polysilicon layer 8, silicon oxide layer 9, silicon nitride
Insulating barrier 10.
Further, also include the interconnection 12 that is formed on varistor 11.
Further, also include being formed at the protective layer on described varistor 11 surface.
Further, also include being bonded in the sheet glass 14 at silicon substrate 1 back side.
The present invention also proposes a kind of pressure sensor chip manufacture method based on mems technique, comprises the following steps:
(1) corrode on substrate and pressure reference chamber 2；
(2) deposit sacrifice layer 3, described sacrifice layer 3 covers described pressure reference chamber 2；
(3) half bore 4 is etched on sacrifice layer 3；
(4) deposited silicon nitride layer 5 on sacrifice layer 3, described silicon nitride fills up half bore 4 on sacrifice layer, to form mass
6；
(5) releasing sacrificial layer 3；
(6) deposit polycrystalline silicon layer 8, silicon oxide layer 9, silicon nitride dielectric layer 10 on silicon nitride layer 5, to constitute multilayer pressure
Sensitive membrane；
(7) deposited polycrystalline silicon thin film, ion implantation doping, and etch varistor 11, form wheatstone bridge configuration；
(8) prepare interconnecting line 12.
Further, before step (1), also include determining chip and presser sensor according to pressure transducer range requirement
Film size, determines the stress distribution of multilayer complex films, arrangement polycrystalline resistor and mass position using finite element analysis software
Step.
Further, described corrosion pressure reference chamber 2 and includes p-type or N-shaped polished silicon slice 1 are aoxidized, and photoetching is simultaneously
Wet etching go out 6-8um about depth shallow silicon cup.
Further, described half bore 4 includes multiple, has depth, the aperture of 1-2 micron of 2-4 micron.
Further, it is additionally included in substrate back bonding sheet glass 14, to form absolute pressure pressure sensor chip.
Brief description
The many pressure pattern pressure sensor chip based on mems technique that Fig. 1 is related to for a present invention wherein embodiment is close
Envelope gauge pressure type sectional view；
The many pressure pattern pressure sensor chip table based on mems technique that Fig. 2 is related to for a present invention wherein embodiment
Pressure sectional view；
The many pressure pattern pressure sensor chip based on mems technique that Fig. 3 is related to for a present invention wherein embodiment
Absolute pressure sectional view；
The many pressure pattern pressure sensor chip based on mems technique that Fig. 4 is related to for a present invention wherein embodiment and
Its preparation method process chart.
Wherein: 1 is p-type or n-type substrate silicon chip, 2 is shallow silicon cup, and 3 is psg sacrifice layer, and 4 is half bore, and 5 is silicon nitride layer, 6
For silicon nitride gauge block, 7 discharge through hole for sacrifice layer, and 8 is polysilicon, and 9 is thermal oxide layer, and 10 is silicon nitride dielectric layer, and 11 are
Polycrystalline resistor, 12 is metal interconnection, and 13 is gauge pressure chip pressure reference chamber, and 14 is bonding sheet glass.
Specific embodiment
In order that those skilled in the art are better understood from technical scheme, 1-4 is carried out in detail below in conjunction with the accompanying drawings
The thin specific embodiment describing the present invention.
Embodiment 1
The present invention proposes a kind of sealing gauge pressure mems pressure sensor chip, referring to Fig. 1, including p-type or n-type substrate silicon chip
1, be formed at the shallow silicon cup 2 on silicon substrate 1, the depth of this shallow silicon cup 2 is 6-8 micron, in shallow silicon cup 2 deposition have sacrifice layer 3,
For example, psg sacrifice layer, forms pressure reference chamber after sacrifice layer 3 release.This pressure sensor chip includes 4 layers of composite membrane and is formed
Pressure sensitive film, this composite membrane includes silicon nitride film 5, polysilicon film 8, heat oxide film 9, silicon nitride dielectric layer 10, in pressure
Sensitive membrane, towards shallow silicon cup side, is formed with multiple masses 6；The design of mass 6 desirably prevents to discharge adhesion phenomenon, matter
Gauge block is located at varistor Stress match region, can improve Sensitivity in Pressure Sensors and the linearity；Top layer nitrogen in composite membrane
Polysilicon resistance layer is prepared on SiClx insulating barrier 10, and ion implanted, etching formation polysilicon varistor 11, to form favour
Stone bridge structure.Varistor is distributed in the symmetrical region of tensile stress and compressive stress on pressure sensitive film；Polysilicon resistance system
Make on the top layer silicon nitride of composite membrane, silicon nitride can play the effect of shielding charged ion, and forms soi structure, improve
The operating temperature range of chip.Also include ion implanting and form Ohmic contact concentrated boron area, deposit metal interconnecting line 12.Also wrap
Include the passivation protection layer being formed at polysilicon varistor 11 surface.
Embodiment 2
The present invention proposes a kind of gauge pressure mems pressure sensor chip, referring to Fig. 2, structure same as Example 1 and portion
Part repeats no more, and difference is: by icp deep etching process, silicon substrate 1 forms gauge pressure chip pressure reference chamber 13,
Prepare gauge sensor chip, wherein: silicon nitride 4 is icp etching barrier layer, realizes etch-stop.
Embodiment 3
The present invention proposes a kind of absolute pressure mems vacuum pressure sensor chip, referring to Fig. 3, enters on the basis of gauge pressure chip
Row silicon on glass bonding technique, bonding glass 14, to silicon substrate 1, forms absolute pressure vacuum pressure reference cavity 13, can complete absolute pressure pressure
The preparation of sensor chip.Repeat no more with embodiment 1,2 identical structures and part.
Embodiment 4
For the mems pressure sensor chip of embodiment 1-3, the present embodiment provides its preparation method, referring to Fig. 4, this
Many pressure pattern pressure sensor chip based on mems technique of bright proposition and preparation method thereof comprises the following steps:
(1) require to determine chip and pressure sensitive film size according to pressure transducer range, using finite element analysis software
Determine the stress distribution of multilayer complex films, arrangement polycrystalline resistor and mass；
(2) p-type or N-shaped polished silicon slice 1 are aoxidized, photoetching wet etching go out 6-8um about depth shallow silicon cup 2,
Pressure reference chamber as pressure transducer；
(3) deposit psg sacrifice layer 3, sacrifice layer cover shallow silicon cup 2, and exceed shallow silicon cup 1um about thickness；
(4) half bore 4 is etched on sacrifice layer 3；The etching depth of this half bore is 2-4 micron, and aperture is 1-2 micron；
(5) pecvd silicon nitride layer 5 on sacrifice layer, silicon nitride fills up sacrifice layer half bore 4, forms mass 6, and to nitridation
Silicon etching forms release through hole 7；Wherein lithographic method is, for example, dry etching, aperture about 3-4 micron；
(6) adopt wet method or dry method hf releasing sacrificial layer 3, discharge the sealing reference cavity 2 of pressure transducer；
(7) lpcvd polysilicon 8, thermal oxide generates silicon oxide 9, then passes through pecvd technique deposit silicon nitride insulating barrier 10,
Form the sensitive membrane of pressure transducer, closing release through hole 7 is to form pressure reference chamber, and 1000-1100 DEG C of annealing release is thin
Membrane stress；Wherein first silicon nitride film 5, polysilicon film 8, silicon oxide film 9, the ratio of the thickness of the second silicon nitride film 10 are 1～2:
0.5～1.5:4～8:1～2, preferably 1.5:1:6:1.5；Thickness is determined by the range of pressure sensor chip；
(8) lpcvd polysilicon membrane, ion implanting is doped, and etches varistor 11, forms Wheatstone bridge knot
Structure；
(9) ion implanting forms Ohmic contact concentrated boron area, deposits metal interconnecting line 12, completes to seal after test, cutting
The preparation of gauge sensor chip.
For gauge sensor chip, further comprising the steps of:
By icp deep etching process, the first silicon nitride film 5 is icp etching barrier layer, realizes etch-stop, forms table
Pressure chip pressure reference chamber 13.
For absolute pressure vacuum pressure sensor chip, further comprise the following steps:
Carry out silicon on glass bonding technique on the basis of gauge pressure chip, sheet glass 14 is bonded on silicon substrate 1, shape
Become absolute pressure vacuum pressure reference cavity, the preparation of absolute pressure pressure sensor chip can be completed.
It should be noted that above-described embodiment belongs to preferred embodiment, involved module not necessarily the application institute
Necessary.Each embodiment in this specification is all described by the way of going forward one by one, what each embodiment stressed be with
The difference of other embodiment, between each embodiment identical similar partly mutually referring to.
Above the application is described in detail, specific case used herein is to the principle of the application and embodiment party
Formula is set forth, and the explanation of above example is only intended to help and understands the present processes and its core concept；Meanwhile, right
In one of ordinary skill in the art, according to the thought of the application, all have change in specific embodiments and applications
Part, in sum, this specification content should not be construed as the restriction to the application.
Claims (5)
1. a kind of pressure sensor chip manufacture method based on mems technique, comprises the following steps:
(1) corrode on substrate and pressure reference chamber (2)；
(2) deposit sacrifice layer (3), described sacrifice layer (3) covers described pressure reference chamber (2)；
(3) in sacrifice layer (3) upper etching half bore (4)；
(4) in sacrifice layer (3) upper deposition the first silicon nitride layer (5), described first silicon nitride layer fills up half bore on sacrifice layer (4),
To form mass (6)；
(5) releasing sacrificial layer (3)；
(6) in the first silicon nitride layer (5) upper deposit polycrystalline silicon layer (8), silicon oxide layer (9), the second silicon nitride layer (10), to constitute
Multilayer pressure sensitive membrane；
(7) deposited polycrystalline silicon thin film, ion implantation doping, and etch varistor (11), form wheatstone bridge configuration；
(8) prepare interconnecting line (12).
2. a kind of pressure sensor chip manufacture method based on mems technique according to claim 1 it is characterised in that:
Before step (1), also include determining chip and pressure sensitive film size, using finite element according to pressure transducer range requirement
Analysis software determines the stress distribution of multilayer complex films, the step of arrangement polycrystalline resistor and mass position.
3. a kind of pressure sensor chip manufacture method based on mems technique according to claim 1 it is characterised in that:
Described corrosion pressure reference chamber (2) and includes p-type or N-shaped polished silicon slice (1) are aoxidized, photoetching wet etching goes out 6-
The shallow silicon cup of 8um depth.
4. a kind of pressure sensor chip manufacture method based on mems technique according to claim 1 it is characterised in that:
Described half bore (4) inclusion is multiple, has depth, the aperture of 1-2 micron of 2-4 micron.
5. a kind of pressure sensor chip manufacture method based on mems technique according to claim 1 it is characterised in that:
It is additionally included in substrate back bonding sheet glass (14), to form absolute pressure pressure sensor chip.
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| CN201510353479.1A CN105000529B (en) | 2015-06-24 | 2015-06-24 | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510353479.1A CN105000529B (en) | 2015-06-24 | 2015-06-24 | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof |
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| CN105000529B true CN105000529B (en) | 2017-02-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108318218B (en) * | 2018-05-14 | 2024-01-16 | 中国空气动力研究与发展中心低速空气动力研究所 | Flexible film type multi-measuring-point pressure measuring belt for low-speed wind tunnel |
| CN112393838A (en) * | 2021-01-19 | 2021-02-23 | 南京高华科技股份有限公司 | Pressure sensor with wafer-level self-sealing vacuum cavity structure and preparation method thereof |
| CN113401861B (en) * | 2021-05-21 | 2024-02-23 | 成都凯天电子股份有限公司 | Multi-range integrated composite diaphragm type MEMS pressure sensor |
| CN115615587B (en) * | 2022-12-20 | 2023-03-07 | 苏州敏芯微电子技术股份有限公司 | Pressure sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201653604U (en) * | 2010-04-09 | 2010-11-24 | 无锡芯感智半导体有限公司 | Pressure sensor |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
| CN103645000A (en) * | 2013-11-22 | 2014-03-19 | 中航（重庆）微电子有限公司 | High-temperature pressure sensor and preparation method thereof |
| CN104071744A (en) * | 2014-06-24 | 2014-10-01 | 上海天英微系统科技有限公司 | Pressure sensor and making method thereof |
-
2015
- 2015-06-24 CN CN201510353479.1A patent/CN105000529B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201653604U (en) * | 2010-04-09 | 2010-11-24 | 无锡芯感智半导体有限公司 | Pressure sensor |
| CN102419227A (en) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | Novel micro-pressure sensor chip |
| CN103645000A (en) * | 2013-11-22 | 2014-03-19 | 中航（重庆）微电子有限公司 | High-temperature pressure sensor and preparation method thereof |
| CN104071744A (en) * | 2014-06-24 | 2014-10-01 | 上海天英微系统科技有限公司 | Pressure sensor and making method thereof |
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