CN102419227A - Novel micro-pressure sensor chip - Google Patents
Novel micro-pressure sensor chip Download PDFInfo
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- CN102419227A CN102419227A CN201110268589XA CN201110268589A CN102419227A CN 102419227 A CN102419227 A CN 102419227A CN 201110268589X A CN201110268589X A CN 201110268589XA CN 201110268589 A CN201110268589 A CN 201110268589A CN 102419227 A CN102419227 A CN 102419227A
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Abstract
The invention provides a novel micro-pressure sensor chip. The chip comprises a monocrystalline silicon wafer, substrate glass and four force-sensing resistors, wherein the positive side of the monocrystalline silicon wafer is provided with a convex beam, and the four force-sensing resistors are respectively arranged on the convex beam; a groove is formed on the back side of the monocrystalline silicon wafer, and at least two back islands are formed at the bottom of the groove; the convex beam is arranged corresponding to the position of the groove; a frame is formed on the periphery of the groove on the back side of the monocrystalline silicon wafer, and is in bonding encapsulation with the substrate glass. According to the integrated chip design of the islands and the beam, large deformation of the chip under high pressure is avoided, and a good effect of concentrating stress is played, the sensitivity, linearity and overload resistance are improved, and the problems of low sensitivity and poor overload resistance of a conventional flat film structure chip are solved. The novel micro-pressure sensor chip can sense the micro-pressure of between 0 and 200Pa, and has good economical benefit and social benefit.
Description
Technical field
The invention belongs to the pressure transducer technical field, specifically, related to a kind of novel micropressure sensor chip.
Background technology
Micropressure sensor all has a very wide range of applications in technical fields such as Industry Control, petroleum industry, space flight, aviation, communications and transportation, metallurgy, machine-building; Yet existing micropressure sensor is in precision and quantitatively all be difficult to satisfy the demand in market.
Pressure sensor chip utilizes piezoresistive effect; The ambient pressure of reaction diaphragm induction is transformed into the variation of strain and stress; Force sensing resistance is placed on the maximum stress place, and two force sensing resistances are placed on the compressive stress district, and two other is placed on the tension zone; Constitute Wheatstone bridge, maximum voltage output is just arranged.For micropressure sensor, its external pressure of responding to is very little, wants to improve the stress value on the diaphragm; With regard to the diaphragm that necessarily requires sensor do very thin; But can bring two problems like this: on the one hand, very thin diaphragm is difficult to processing on technology; On the other hand, relatively thinner diaphragm can produce bigger flexural deformation, makes the nonlinearity of sensor sharply increase, and has also reduced the precision of sensor simultaneously.Flat membranous type chip structure is easy to " balloon effect " occur under the Large Deflection Deformation situation, makes the anti-overload ability of sensor and the linearity descend greatly.
In order to solve the problem of above existence, people are seeking a kind of desirable technical solution always.
Summary of the invention
The objective of the invention is the deficiency to prior art, thus provide a kind of highly sensitive, the linearity good, anti-overload ability is strong, the simple novel micropressure sensor chip of making.
To achieve these goals; The technical scheme that the present invention adopted is: a kind of novel micropressure sensor chip; Include monocrystalline silicon piece, substrate glasses and four force sensing resistances, said monocrystalline silicon piece front is provided with protruding beam, and four said force sensing resistances are separately positioned on the said protruding beam; The said monocrystalline silicon piece back side offers groove, and said groove bottom land is provided with and is no less than two back of the body islands; The corresponding said groove of said protruding beam position is provided with; Form a frame around the groove at the said monocrystalline silicon piece back side, said frame and said substrate glasses bonding are packaged together.
Based on above-mentioned, said protruding beam is the protruding beam of cruciform flat-top, and four said force sensing resistances are separately positioned on four beam arms of the protruding beam of said cruciform flat-top; Said groove bottom land is distributed with four symmetrically arranged in twos back of the body islands.
Based on above-mentioned, insulation course is set on the said monocrystalline silicon piece and constitutes pressure-sensitive diaphragm with this, the corresponding said groove of said pressure-sensitive diaphragm position is provided with.
Based on above-mentioned, the thickness on said back of the body island is not less than three times of thickness that said pressure-sensitive diaphragm does not have protruding beam position.
Based on above-mentioned, the thickness that said pressure-sensitive diaphragm does not have protruding beam position is the 11--13 micron.
Based on above-mentioned, it is the 34--36 micron that said pressure-sensitive diaphragm has the thickness at protruding beam position.
The relative prior art of the present invention has outstanding substantive distinguishing features and marked improvement; Specifically; Through the island beam integrated setting of back of the body island and positive protruding beam, back of the body island is arranged on the back side of monocrystalline silicon piece, and force sensing resistance is arranged on the positive protruding beam of monocrystalline silicon piece; Not only avoided chip big deformation quantity under big pressure; Also play the effect that good stress is concentrated simultaneously, improved sensitivity, the linearity and the anti-overload ability of said novel micropressure sensor chip, solved the low problem with the anti-overload ability difference of general flat membrane structure chip sensitivity; Force sensing resistance is processed by polycrystalline silicon material, the temperature at zero point of said novel micropressure sensor chip is floated can accomplish very little, and the temperature coefficient of zero-bit, resistance and sensitivity all is linear change with temperature, is easy to compensation; Said novel micropressure sensor chip can be experienced the minute-pressure power of 0-200Pa, has good economic benefits and social benefit.
Description of drawings
Fig. 1 is the plan structure synoptic diagram of said novel micropressure sensor chip.
Fig. 2 is the sectional structure synoptic diagram of said novel micropressure sensor chip.
Fig. 3 is the structure synoptic diagram of said monocrystalline silicon piece.
Embodiment
Through embodiment, technical scheme of the present invention is done further detailed description below.
Like Fig. 1, Fig. 2 and shown in Figure 3, a kind of novel micropressure sensor chip includes monocrystalline silicon piece 1, substrate glasses 2 and four force sensing resistances 3, and said monocrystalline silicon piece 1 front is provided with 4, four said force sensing resistances 3 of protruding beam and is separately positioned on the said protruding beam 4; Said monocrystalline silicon piece 1 back side offers groove, and said groove bottom land is provided with four back of the body islands 5; Said protruding beam 4 corresponding said groove positions are provided with; Form a rectangular shaped rim around the groove at said monocrystalline silicon piece 1 back side, said rectangular shaped rim and said substrate glasses 2 electrostatic bondings are packaged together.
Specifically; Said protruding beam 4 is the protruding beams of cruciform flat-top that on said monocrystalline silicon piece 1 front, form through photoetching corrosion; Four said force sensing resistances 3 are separately positioned on four beam arms of the protruding beam 4 of said cruciform flat-top; The resistor stripe of four said force sensing resistances 3 for the boron-doped nanometer silicon thin film is carried out forming behind the photoetching corrosion, evaporation or sputter gold are as the lead-in wire of electrode then; The position of corresponding said groove is provided with insulation course on the said monocrystalline silicon piece 1; And constitute pressure-sensitive diaphragm 6 with this; Said pressure-sensitive diaphragm 6 is to adopt silicon oxide film that chemical vapour deposition technique deposits the 3um left and right thickness or/and the monocrystalline silicon piece 1 of silicon nitride film, and at no protruding girder construction place, the thickness of said pressure-sensitive diaphragm 6 is about 12um; Protruding girder construction place is arranged, and the thickness of said pressure-sensitive diaphragm 6 is about 35um; Four said back of the body islands 5 are same to be formed through lithography corrosion process, and its thickness is not less than three times of thickness at said pressure-sensitive diaphragm 6 no protruding beam positions; After the rectangular shaped rim electrostatic bonding encapsulation with the substrate glasses 2 and said monocrystalline silicon piece 1 back side, the structure of entire chip can be accomplished.
Should be noted that at last: above embodiment is only in order to technical scheme of the present invention to be described but not to its restriction; Although with reference to preferred embodiment the present invention has been carried out detailed explanation, the those of ordinary skill in affiliated field is to be understood that: still can specific embodiments of the invention make amendment or the part technical characterictic is equal to replacement; And not breaking away from the spirit of technical scheme of the present invention, it all should be encompassed in the middle of the technical scheme scope that the present invention asks for protection.
Claims (6)
1. a novel micropressure sensor chip includes monocrystalline silicon piece, substrate glasses and four force sensing resistances, and it is characterized in that: said monocrystalline silicon piece front is provided with protruding beam, and four said force sensing resistances are separately positioned on the said protruding beam; The said monocrystalline silicon piece back side offers groove, and said groove bottom land is provided with and is no less than two back of the body islands; The corresponding said groove of said protruding beam position is provided with; Form a frame around the groove at the said monocrystalline silicon piece back side, said frame and said substrate glasses bonding are packaged together.
2. novel micropressure sensor chip according to claim 1 is characterized in that: said protruding beam is the protruding beam of cruciform flat-top, and four said force sensing resistances are separately positioned on four beam arms of the protruding beam of said cruciform flat-top; Said groove bottom land is distributed with four symmetrically arranged in twos back of the body islands.
3. novel micropressure sensor chip according to claim 1 and 2 is characterized in that: insulation course is set on the said monocrystalline silicon piece and constitutes pressure-sensitive diaphragm with this, the corresponding said groove of said pressure-sensitive diaphragm position is provided with.
4. novel micropressure sensor chip according to claim 3 is characterized in that: the thickness on said back of the body island is not less than three times of thickness that said pressure-sensitive diaphragm does not have protruding beam position.
5. novel micropressure sensor chip according to claim 4 is characterized in that: the thickness that said pressure-sensitive diaphragm does not have protruding beam position is the 11--13 micron.
6. novel micropressure sensor chip according to claim 5 is characterized in that: it is the 34--36 micron that said pressure-sensitive diaphragm has the thickness at protruding beam position.
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| CN201110268589XA CN102419227A (en) | 2011-09-13 | 2011-09-13 | Novel micro-pressure sensor chip |
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| CN201110268589XA CN102419227A (en) | 2011-09-13 | 2011-09-13 | Novel micro-pressure sensor chip |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| CN103115720A (en) * | 2013-01-16 | 2013-05-22 | 西安交通大学 | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure |
| CN103954383A (en) * | 2014-04-28 | 2014-07-30 | 西北工业大学 | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof |
| CN104458076A (en) * | 2014-11-26 | 2015-03-25 | 西安交通大学 | Micro-pressure sensor with high overloads and low accelerated speed interference |
| CN104748904A (en) * | 2015-03-24 | 2015-07-01 | 西安交通大学 | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
| CN105000529A (en) * | 2015-06-24 | 2015-10-28 | 无锡芯感智半导体有限公司 | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof |
| CN106298614A (en) * | 2015-05-13 | 2017-01-04 | 无锡华润安盛科技有限公司 | A kind of thimble for backside openings chip |
| CN111504526A (en) * | 2020-05-29 | 2020-08-07 | 西安交通大学 | Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof |
| CN111513425A (en) * | 2020-06-04 | 2020-08-11 | 厉晨宇 | Detecting insole and walking posture adjusting system |
| CN111802890A (en) * | 2020-06-29 | 2020-10-23 | 徐峰 | Carpet, system and method capable of collecting sound data and pressure data |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| CN103115720A (en) * | 2013-01-16 | 2013-05-22 | 西安交通大学 | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure |
| CN103115720B (en) * | 2013-01-16 | 2015-05-13 | 西安交通大学 | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure |
| CN103954383A (en) * | 2014-04-28 | 2014-07-30 | 西北工业大学 | Bottom separation plate microsensor capable of being used for measuring wall shear stress in high temperature environment and manufacturing method thereof |
| CN104458076A (en) * | 2014-11-26 | 2015-03-25 | 西安交通大学 | Micro-pressure sensor with high overloads and low accelerated speed interference |
| CN104458076B (en) * | 2014-11-26 | 2017-01-04 | 西安交通大学 | A kind of micropressure sensor with the low acceleration noise of high overload |
| CN104748904B (en) * | 2015-03-24 | 2017-05-17 | 西安交通大学 | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
| CN104748904A (en) * | 2015-03-24 | 2015-07-01 | 西安交通大学 | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method |
| CN106298614A (en) * | 2015-05-13 | 2017-01-04 | 无锡华润安盛科技有限公司 | A kind of thimble for backside openings chip |
| CN105000529A (en) * | 2015-06-24 | 2015-10-28 | 无锡芯感智半导体有限公司 | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof |
| CN105000529B (en) * | 2015-06-24 | 2017-02-01 | 无锡芯感智半导体有限公司 | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof |
| CN111504526A (en) * | 2020-05-29 | 2020-08-07 | 西安交通大学 | Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof |
| CN111504526B (en) * | 2020-05-29 | 2021-05-28 | 西安交通大学 | Piezoresistive pressure sensor chip with stress concentration structure and preparation method thereof |
| CN111513425A (en) * | 2020-06-04 | 2020-08-11 | 厉晨宇 | Detecting insole and walking posture adjusting system |
| CN111802890A (en) * | 2020-06-29 | 2020-10-23 | 徐峰 | Carpet, system and method capable of collecting sound data and pressure data |
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Application publication date: 20120418 |