CN103438936B

CN103438936B - Based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method

Info

Publication number: CN103438936B
Application number: CN201310393751.XA
Authority: CN
Inventors: 王立峰; 任青颖; 唐丹; 黄庆安
Original assignee: Southeast University
Current assignee: Southeast University
Priority date: 2013-09-02
Filing date: 2013-09-02
Publication date: 2016-06-15
Anticipated expiration: 2033-09-02
Also published as: CN103438936A

Abstract

The invention discloses a kind of based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method, described manufacture method utilizes the deep silicon etching technology of substep and SOI sheet device layer silicon to combine with glass anode linkage technology, flat board bulky capacitor structure that membrane structure needed for can simultaneously preparing integrated sensor, electrode gap are minimum and seal cavity body structure, it is characterized in that achieving the Integrated manufacture of the sensitive temperature of plenary capacitance, humidity and baroceptor, namely achieve low-power consumption integrated multi-sensor structure. The present invention can realize on the sheet of temperature, humidity and baroceptor integrated, and the area of sensor integration structure is greatly reduced, interconnection line length reduction system reliability is improved.

Description

Based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method

Technical field

The present invention relates to the manufacture method of a kind of sensor, be specifically related to a kind of based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method.

Background technology

Along with the application demand of the progress of micro-processing technology and intelligent miniature sensor-based system, integrated on monolithic of multiple sensors will become a kind of development trend. On the sheet of multiple sensors, integrated approach can be divided into two big classes, and the first kind is to utilize multichip modules technology integrated on the same substrate after multiple sensor manufactures respectively, and this kind of technology relative maturity is widely used. The complexity that the advantage of multichip modules technology is one single chip reduces therefore its R&D costs reduction, its shortcoming mainly includes that level of integrated system is low causes the problems such as relatively big, longer, the reliability reduction of interconnection circuit of area, and the performance of the multiple-sensor integration system therefore assembled based on multi-chip is difficult to break through. Multisensor is directly carried out Integrated manufacture by Equations of The Second Kind exactly on a disk, this method can overcome many shortcomings of multichip modules technology, its advantage includes system dimension reduction, interconnection length minimizing reliability improves, produces cost reduction etc. in batches, and its shortcoming will be the expense raising that therefore research and development difficulty increase researches and develops.

Compare the integrated of sensor with integrated circuit and seem increasingly difficult, reason be the operation principle of different sensors and organization plan difference very big.From operation principle, some sensors are resistance sensitivity principle, and some sensors are capacitance-sensitive principles; From organization plan, some needs the special constructions such as thin film, and some then needs special sensitive material. Therefore the sensor of these different principle and structure is carried out Integrated manufacture, it is necessary to study a set of specific processing method.

Summary of the invention

Goal of the invention: for above-mentioned prior art, the present invention provides a kind of based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method, it is achieved directly on a disk, multiple sensors is carried out Integrated manufacture.

Technical scheme: based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method, the method realizes based on SOI sheet and glass substrate, and described SOI sheet is made up of the substrate silicon set gradually from top to bottom, buried oxide, device layer silicon; Utilize the deep silicon etching technology of substep and device layer silicon to combine with glass anode linkage technology, prepare membrane structure, flat board bulky capacitor structure simultaneously and seal cavity body structure, ultimately forming humidity sensor, baroceptor and temperature sensor integrated morphology; The method comprises the steps:

Step 1), device layer silicon described in dry etching, control etching depth and respectively obtain the silicon thin film structure of baroceptor and temperature sensor; Adopt ion implantation technique to reduce the resistivity of described device layer silicon, generate dielectric layer etched features, obtain the dielectric strained layer of humidity sensor, temperature sensor and baroceptor; Adopt dry etching to cut through device layer silicon and obtain the comb capacitance structure of humidity sensor and the cantilever beam structure of temperature sensor, obtain the groove that humidity sensor, baroceptor and temperature sensor are electrically isolated from each other simultaneously;

Step 2), at dielectric strained layer surface deposition the etch pattern of described temperature sensor, obtain the temperature sensing metal layer of temperature sensor;

Step 3), in described glass substrate, deposited metal etch pattern obtain the electrode of humidity sensor, baroceptor and temperature sensor; Electrode surface at described humidity sensor applies humidity-sensitive material etch pattern and obtains the humidity sensing layer of humidity sensor; The upper electrode of humidity sensor is obtained again at the surface deposition metal level of the humidity sensing layer of described humidity sensor etch pattern;

Step 4), described device layer silicon and described glass substrate are carried out anode linkage and obtains sealing bonding face, and form baroceptor sealing cavity;

Step 5), corrode described SOI sheet substrate silicon and SOI sheet buried oxide release structure, obtain final humidity sensor, baroceptor and temperature sensor.

Beneficial effect: (1) present invention can realize on the sheet of temperature, humidity and baroceptor integrated, compared with assembling with discrete device, the area of integrated system is greatly reduced, interconnection line length reduction system reliability improves;

(2) present invention utilizes the deep silicon etching technology of substep and SOI sheet device layer silicon to combine with glass anode linkage technology, flat board bulky capacitor structure that the membrane structure needed for can simultaneously preparing integrated sensor, electrode gap are minimum and sealing cavity body structure;

(3) present invention achieves on the sheet of the sensitive temperature of plenary capacitance, humidity and baroceptor integrated, capacitance-sensitive sensor does not have DC power, and have only to during capacitance measurement use ac small signal, therefore the power consumption of temperature, humidity and baroceptor integrated morphology is extremely low.

Accompanying drawing explanation

Fig. 1 is structural representation after the etching of SOI sheet, ion implanting etch again;

Fig. 2 is structural representation after insulating medium layer and metal level corrosion;

Fig. 3 is structural representation after metal level on glass, wet sensory material and metal level corrosion;

Fig. 4 is structural representation after device layer silicon and glass anode linkage;

Fig. 5 obtains temperature, humidity and baroceptor structural representation after SOI sheet substrate silicon and buried oxide corrosion;

Fig. 6 is the top view adopting this method to obtain three sensor constructions.

Detailed description of the invention

Below in conjunction with accompanying drawing the present invention done and further explain.

A kind of based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method, the method realizes based on SOI sheet and glass substrate 6, and SOI sheet is made up of the substrate silicon 1 set gradually from top to bottom, buried oxide 2, device layer silicon 3. The deep silicon etching technology of substep and device layer silicon is utilized to combine with glass anode linkage technology, prepare the flat board bulky capacitor structure of membrane structure, baroceptor and temperature sensor simultaneously and seal cavity body structure, ultimately forming humidity sensor, baroceptor and temperature sensor integrated morphology. The method comprises the steps:

Step 1), as it is shown in figure 1, device layer silicon 3 described in dry etching, control etching depth and respectively obtain the silicon thin film structure 31 of baroceptor and temperature sensor; Adopt ion implantation technique to reduce the resistivity of device layer silicon 3, generate dielectric layer etched features, obtain the dielectric strained layer 4 of humidity sensor, temperature sensor and baroceptor; Adopt dry etching to cut through device layer silicon 3 again and obtain the comb capacitance structure of humidity sensor and the cantilever beam structure of temperature sensor, obtain the groove 32 that humidity sensor, baroceptor and temperature sensor are electrically isolated from each other simultaneously;

Step 2), as in figure 2 it is shown, at the pole plate shaped graphic of dielectric strained layer 4 surface deposition of temperature sensor corrosion temperature sensor, obtain the temperature sensing metal layer 5 of temperature sensor;

Step 3), as it is shown on figure 3, deposited metal etch pattern obtain the electrode 7 of humidity sensor, baroceptor and temperature sensor in glass substrate 6; The humidity sensing layer 8 of humidity sensor is obtained again at electrode 7 surface of humidity sensor coating humidity-sensitive material etch pattern; The upper electrode 9 of humidity sensor is obtained again at the surface deposition metal level of the humidity sensing layer 8 of humidity sensor etch pattern; Wherein, humidity-sensitive material can adopt polyimides, porous silicon.

Step 4), as shown in Figure 4, device layer silicon 3 and glass substrate 6 are carried out anode linkage and obtains sealing bonding face 10, and form baroceptor sealing cavity;

Step 5), as it is shown in figure 5, corrode described SOI sheet substrate silicon 1 and SOI sheet buried oxide 2 discharges structure, obtain final humidity sensor 11, baroceptor 12 and temperature sensor 13, as shown in Figure 6.

The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.

Claims

1. based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method, it is characterized in that: the method realizes based on SOI sheet and glass substrate (6), and described SOI sheet is made up of the substrate silicon (1) set gradually from top to bottom, buried oxide (2), device layer silicon (3);Utilize the deep silicon etching technology of substep and device layer silicon to combine with glass anode linkage technology, prepare membrane structure, flat board bulky capacitor structure simultaneously and seal cavity body structure, ultimately forming humidity sensor, baroceptor and temperature sensor integrated morphology; The method comprises the steps:

Step 1), device layer silicon (3) described in dry etching, control etching depth and respectively obtain the silicon thin film structure (31) of baroceptor and temperature sensor; Adopt ion implantation technique to reduce the resistivity of described device layer silicon (3), generate dielectric layer etched features, obtain the dielectric strained layer (4) of humidity sensor, temperature sensor and baroceptor; Adopt dry etching to cut through device layer silicon (3) and obtain the comb capacitance structure of humidity sensor and the cantilever beam structure of temperature sensor, obtain the groove (32) that humidity sensor, baroceptor and temperature sensor are electrically isolated from each other simultaneously;

Step 2), at dielectric strained layer (4) surface deposition the etch pattern of described temperature sensor, obtain the temperature sensing metal layer (5) of temperature sensor;

Step 3), the electrode (7) of humidity sensor, baroceptor and temperature sensor is obtained in the upper deposited metal of described glass substrate (6) etch pattern; The humidity sensing layer (8) of humidity sensor is obtained at electrode (7) surface of described humidity sensor coating humidity-sensitive material etch pattern; The upper electrode (9) of humidity sensor is obtained again at the surface deposition metal level of the humidity sensing layer (8) of described humidity sensor etch pattern;

Step 4), described device layer silicon (3) and described glass substrate (6) are carried out anode linkage and obtains sealing bonding face (10), and form baroceptor sealing cavity;

Step 5), corrode described SOI sheet substrate silicon (1) and SOI sheet buried oxide (2) and discharge structure, obtain final humidity sensor (11), baroceptor (12) and temperature sensor (13).