CN103121658B - The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope - Google Patents
The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope Download PDFInfo
- Publication number
- CN103121658B CN103121658B CN201110371162.2A CN201110371162A CN103121658B CN 103121658 B CN103121658 B CN 103121658B CN 201110371162 A CN201110371162 A CN 201110371162A CN 103121658 B CN103121658 B CN 103121658B
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- anchor point
- metal
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of machining manufacture of capacitive triaxial micro gyroscope, two panels silicon substrate and thick polysilicon epitaxy technology are provided, polysilicon movable structure bottom electrode plate can be realized detect, the connection of the inner electrical structure of seal chamber and the electrical outer connecting structure of containment portion and single-layer metal electrical interconnects and intracellular signaling can be realized.Interconnection line intersection region, use epipolysilicon layer electrically to put up a bridge and avoid the short circuit of single-layer metal interconnection, this electrically puts up a bridge by ground connection anchor point, and inside and outside cavity, electric connection layer, electrically outer connecting structure supporting construction realize.Compare traditional SOI technology and silex glass bonding technology cost advantage of the present invention is obvious, can do on the basis of the wafer of structure sheaf, realize the Vacuum Package of wafer level in saving a slice.And polysilicon thickness controls simple, can realize multiple different thickness requirement.Reduce one deck light shield and multi-step process step, improving product stability and reliability simultaneously.
Description
Technical field
The present invention relates to a kind of machining manufacture for capacitive triaxial micro gyroscope, integrated bottom crown measuring ability is realized by epi polysilicon technology in particular to one, and the machining manufacture of electrical interconnects is realized at underlying polysilicon layer, only can realize the function of electrical intercommunication and the Vacuum Package (wafer level packaging of wafer level by two panels silicon substrate and processing technology, be exactly that wafer carries out overall vacuum encapsulation, be different from traditional single chips Vacuum Package).
Background technology
Capacitive triaxial micro gyroscope is a kind of motion chip that can be used for the change of detection angle rate signal based on MEMS, being widely used in the industries such as national defence, automobile, mobile phone, accurate agricultural machinery, game, navigation, medical treatment, is the connection tie of important man-machine interaction interface.Three axles refer to can simultaneously for X, Y, Z tri-axle stereoscopic and omnibearing detect, be different from that the cross assembly of traditional single axis gyroscope is integrated could realize three s functions.Condenser type refers to that condenser type electrostatic drives and condenser type differential output, requires in process, form corresponding comb framework or capacitor board structure.Its processing technology compare single shaft and twin shaft more accurate, more complicated, and requirement can control process layer quantity, reduces light shield quantity and process costs.
Traditional microthrust test processing technology, as SOI(Silicon on isolator, silicon in dielectric substrate) technological requirement uses two panels silicon substrate and a slice SOI wafer, wherein a slice silicon substrate connects up, thus realize electrical and signal linkage function, another sheet silicon substrate is as vacuum cover plate, this technique also can realize the function of capacitive triaxial micro gyroscope, but cause cost higher because using three silicon substrates, processing step is more, and need custom skin silicon thickness because of SOI wafer, thus it is dumb to the THICKNESS CONTROL of the movable structure layer that surface silicon namely will be formed.
Another kind of traditional handicraft silex glass bonding technology connects up in movable silicon structure, thus realize electrical interconnects and intracellular signaling, but on movable silicon, only realize the driving of comb and detect all functions that cannot realize three axles, particularly when movable structure does the up-down vibration perpendicular to horizontal plane, only undesirable with the detection of comb to the signal of telecommunication, and the signal of telecommunication on middle isolated island structure silicon cannot be drawn, respective production three-axis gyroscope is more difficult.
Summary of the invention
For making up above deficiency, the invention provides a kind of machining manufacture of the capacitive triaxial micro gyroscope based on thick polysilicon epitaxy technology, technique is simple, easy to use, be convenient to technology controlling and process, and the above-mentioned counter electrode partitioned signal vibrated vertically can be solved detect and isolated island is electrically outer connects.
According to the present invention, a kind of silicon epitaxy manufacture method of capacitive triaxial micro gyroscope is provided, it is characterized in that:
Its movable structure and substrate comprise silicon substrate 1, insulating layer of silicon oxide 2, first throughholes 3, anchor point are electrically connected metal level 4, silicon dioxide sacrificial layer 5, second throughholes 6, ground connection anchor point 7, metal pressing structure sheaf 8, unsettled comb 9, can charged anchor point 10, first cavity 11, insulation anchor point 12, bottom crown 13, electrically outer connecting structure pad 14, electric connection layer 15 and electrical outer connecting structure supporting construction 16 inside and outside cavity;
The manufacturing step of its movable structure and substrate comprises:
Using silicon substrate 1 as substrate layer, silicon substrate 1 grows insulating layer of silicon oxide 2, oxidation insulating layer 2 is made structure through photoetching and is formed the first throughholes 3, and on oxidation insulating layer 2, grow layer of metal and structure patterning, generate anchor point respectively and be electrically connected metal level 4, electric connection layer 15 inside and outside bottom crown 13 and cavity, wherein the first throughholes 3 and anchor point are electrically connected metal level 4 and are connected, anchor point is electrically connected metal level 4 and is connected with the second throughholes 6 that silicon dioxide sacrificial layer 5 is formed by etching, bottom crown 13 is with insulation anchor point 12 and can be connected by charged anchor point 10, inside and outside cavity, electric connection layer 15 is connected with electrical outer connecting structure supporting construction 16 with ground connection anchor point 7, finally growing metal pressing structure layer 8 on ground connection anchor point 7, electrical outer connecting structure supporting construction 16 grows electrical outer connecting structure pad14, and through the release of silicon dioxide sacrificial layer 5, form the first cavity 11 and unsettled comb 9,
Its vacuum cover plate comprises thin silicon substrate a, the first oxidation insulating layer b, insulating layer openings c, silicon opening d, the first thermal oxide layer e, the second insulating barrier f, cavity g, metal pressing structure sheaf h, the second thermal oxide layer i and adsorbent j;
The manufacturing step of its vacuum cover plate comprises:
With thin silicon substrate a for substrate, the back side grows the first oxidation insulating layer b, forms insulating layer openings c thereafter, forms silicon opening d, grow the first thermal oxide layer e thereafter on silicon opening d through over etching;
Front grows the second insulating barrier f, and graphically, graphic based etches cavity g, grows the second thermal oxide layer i thereafter on cavity framework, and on the insulating barrier f of front second growing metal pressing structure layer h and adsorbent j;
Finally, movable structure and substrate and vacuum cover plate are realized pressure, generate metal eutectic layer k.
According to a preferred embodiment of the invention, wherein bottom crown 13, anchor point electric connection metal level 4 and electrical outer connecting structure pad14 are made up of same layer metal, and this layer of metal can insert the first throughholes 3, the interconnection of realization and silicon substrate 1.
According to a preferred embodiment of the invention, wherein ground connection anchor point 7, unsettled comb 9, electrically outer connecting structure supporting construction 16 are graphically realized afterwards by same layer epitaxial polysilicon layer.
According to a preferred embodiment of the invention, wherein electrically outer connecting structure pad14 and metal pressing structure sheaf are realized by same layer metal.
According to a preferred embodiment of the invention; wherein the first cavity 11 forms by with silicon dioxide sacrificial layer 5 and insulating layer of silicon oxide 2 before being released; partial oxidation sacrificial silicon layer 5 is subject to the protection of ground connection anchor point 7 in dispose procedure; partial oxidation silicon insulating barrier 2 is subject to the protection that anchor point is electrically connected electric connection layer 15 inside and outside metal level 4, bottom crown 13 and cavity in dispose procedure; protected part finally stays, and does not have protected part to be released formation first cavity 11.
According to a preferred embodiment of the invention, wherein pass through between bottom crown 13 to realize interconnection by the conductive silicon structure on top layer by charged anchor point 10, can with the top layer electric bridge of an anchor point as connection two underlying substrate.
According to a preferred embodiment of the invention, the wherein partial width place opening of vacuum cover plate on single chips, conveniently to take in disk transfer process.
A silicon epitaxy manufacturer for capacitive triaxial micro gyroscope, comprises the following steps:
1) provide the silicon substrate of a slice twin polishing, the process combination that thickness adopts grinding to add wet method release stress is controlled.
2) CVD(Chemical vapor deposition chemical vapour deposition (CVD) is utilized in the wherein one side of this silicon substrate) or hot oxygen method deposits or growth layer of silicon dioxide, the basis of this silica deposits one deck silicon nitride with CVD, the effect of silica and silicon nitride is as the insulating barrier between bottom metal (the first metal layer) and silicon, and wherein silica is also as the stress-buffer layer of silicon nitride and silicon substrate.
3) through the combination layer of light mask image transition diagram silicon nitride and silica, and etch formation first throughholes through RIE, the effect of this through hole is the connection forming bottom metal (i.e. the first metal layer) and silicon substrate, formation ground connection.
4) magnetic control sputtering plating deposition bottom metal (i.e. first layer metal) graphical, the effect of this metal level realizes bottom crown and electrical and signal interconnection.
5) on bottom metal (i.e. the first metal layer), utilize CVD to deposit thick layer silica, this silicon dioxide layer realizes metal surface insulation, and utilizes this thick silicon dioxide layer to serve as sacrifice layer.
6) through light mask image transfer and through RIE(Reaction Ion etch, plasma vapor phase etchant) etching makes thick silicon dioxide layer pattern, and exposing can charged anchor point, insulation anchor point, the join domain of ground connection anchor point.
7) thick polysilicon extension, grows the thickness that design is wanted, and through surface finish after extension completes, makes polysilicon surface smooth.
8) at thick polysilicon top layer magnetic control sputtering plating second layer metal (i.e. the second metal level), and graphically, the effect of this metal level is the wherein one deck forming electrical outer connecting structure Pad and hermetically-sealed construction bonded layer.
9) again graphical, the figure of the gyroscope gauge outfit of design is transferred to thick polysilicon and second layer metal (i.e. the second metal level) surface through light shield, DRIE(Deep reaction ion etch, dark silicon etching), comb required for formation, cantilever beam, various independent anchor point and movable structure sheaf, and thick polysilicon layer, forming electrical interconnects between charged anchor point, plays the effect of three-dimensional bridge joint.
10) the silica release bottom thick polysilicon, form cavity, and make comb, cantilever beam structure is unsettled.
11) provide another sheet silicon substrate as vacuum cover plate, the process combination that same thickness adopts grinding to add wet method release stress is controlled.
12) utilize CVD or hot oxygen method deposition in the wherein one side of this silicon substrate or grow layer of silicon dioxide, through Graphic transitions, two step RIE etchings form designed figure as alignment mark point.
13) utilize CVD or hot oxygen method deposition at the another side of alignment mark point or grow layer of silicon dioxide, etch through Graphic transitions with to the RIE of silica, spill the region of corresponding movable structure and the region of electrical outer connecting structure pad, through wet etching, etch the degree of depth of needs, the groove required for formation.
14) this silicon substrate alignment mark face Graphic transitions and through RIE etching, expose designed electrical outer connecting structure pad region, through wet etching, the silicon in electrical outer connecting structure pad region carve wear.
15) at the silicon substrate backside deposition adsorbent of alignment mark, the effect of adsorbent assists to reach required condition of high vacuum degree.
16) at the silicon substrate backside deposition third layer metal (i.e. the 3rd metal level) of alignment mark, and graphically, the effect of this metal level is the corresponding other one deck forming hermetically-sealed construction bonded layer.
17) two panels silicon substrate realizes metal bonding through contraposition in vacuum bonding machine, and this technique completes.
Compared with prior art, the present invention has distinguishing feature and advantage, process like this is only used two panels silicon substrate and can be detected realizing polysilicon movable structure bottom electrode plate, the connection of the inner electrical structure of seal chamber and the electrical outer connecting structure of containment portion and single-layer metal electrical interconnects and intracellular signaling, and achieve the vacuum seal of wafer level.
Although the present invention will be described in conjunction with some exemplary enforcements and using method hereinafter, it will be appreciated by those skilled in the art that and be not intended to the present invention to be limited to these embodiments.Otherwise, be intended to cover all substitutes be included in spirit of the present invention and scope that appending claims defines, correction and equivalent.
Other advantage of the present invention, object and feature will be set forth to a certain extent in the following description, and to a certain extent, based on will be apparent to those skilled in the art to investigating hereafter, or can be instructed from the practice of the present invention.Object of the present invention and other advantage can by descriptions below, claims, and in accompanying drawing, specifically noted structure realizes and obtains.
Accompanying drawing explanation
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 is the present invention's deposition of silica on structure silicon-based plate, silicon nitride, the generalized section of bottom metal (the first metal layer) and counter structure;
Fig. 2 is the generalized section of the present invention before hanging structure release;
Fig. 3 is the cross-sectional view of the structure silicon-based plate of the present invention after hanging structure release;
Fig. 4 is the cross-sectional view of vacuum cover plate of the present invention;
Fig. 5 is the cross-sectional view of final finished of the present invention;
Fig. 6 is the Pad selective etch region front view of vacuum cover plate of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.It should be noted that according to the embodiment of the machining manufacture of the capacitive triaxial micro gyroscope based on thick polysilicon epitaxy technology of the present invention as just example, but the invention is not restricted to this detailed description of the invention.
As shown in Figure 1, provide the silicon substrate of a slice twin polishing, the process combination that thickness can adopt grinding to add wet method release stress is controlled, and general thickness controls at 300 to 400 microns.CVD(Chemical vapor deposition is utilized in the wherein one side of this silicon substrate, chemical vapour deposition (CVD)) or hot oxygen method deposits or growth layer of silicon dioxide, the basis of this silica deposits one deck silicon nitride with CVD, the effect of silica and silicon nitride is as the insulating barrier between bottom metal (the first metal layer) and silicon, and wherein silica is also as the stress-buffer layer of silicon nitride and silicon substrate.After litho pattern transfer, the first throughholes is exposed in etching.To expose the silicon nitride surface magnetic control sputtering plating layer of metal of through hole, this metal ingredient selects W(tungsten) or WTi(titanium-tungsten), use the feature that its fusing point is higher, because of higher in the outer time delay temperature of thick polysilicon.Graphic transitions forms bottom crown, is electrically connected, the structure of Signal transmissions, wherein bottom crown edge layout will with the justified margin of corresponding hanging structure induction mass.
As shown in Figure 2, at the upper deposition of thick silicon dioxide layer of bottom metal (the first metal layer), layer thickness control at 1 to 10 micron, to form the cavity shown in Fig. 3.Thick silicon dioxide layer is through Graphic transitions, and what etch corresponding design is with an anchor point, the raceway groove of insulation anchor point and ground connection anchor point, so that in the outer time delay of thick polysilicon, thick polysilicon can grow on the metal needing to do anchor point or silicon dioxide layer by direct part.Then by epitaxial furnace grow thick polysilicon, thickness can control at 10 to 100 microns, because thick polysilicon extension rear surface is smooth not, so will through CMP(Chemical mechanical polishing, cmp) grinding, the flatness of control surface, homogeneity.Polysilicon surface after grinding will realize the electric conductivity control of polysilicon through the boron P type polysilicon doping of trivalent, annealing, discharges the internal stress produced in doping process.Thereafter jet-plating metallization copper (Cu) on smooth polysilicon layer, and make copper (Cu) thickness be increased to 3 to 6 microns with plating, as wherein one deck that metal is diffusion interlinked.
As shown in Figure 3, through the Graphic transitions of designed gyroscope gauge outfit and movable structure, rear DRIE(Deep reaction ion etch, dark silicon etching), obtain all comb, anchor point, the blank of girder construction, then through BOE(Buffered Oxide Etch, buffer silicon oxide etches) wet etching, discharge silicon dioxide sacrificial layer and part of silica and silicon nitride bottom, this step can decide the scope of release areas by time controling.
As shown in Figure 4, provide the silicon substrate of a slice twin polishing, thickness can adopt first grind add afterwards wet etching release stress process combination controlled, general thickness controls at 300 to 400 microns.Utilize CVD or hot oxygen method deposition in the wherein one side of this silicon substrate or grow layer of silicon dioxide, the insulating barrier of the mask layer that this silica etches as silicon and silicon, then Graphic transitions etching silicon forms designed raceway groove, using as loci, through overheated oxygen, the silicon face that raceway groove is exposed generates silica.And make the silicon face of loci figure with this, as the back side of this silicon vacuum cover plate.Front grows layer of silicon dioxide by the technology mode of CVD or hot oxygen equally; silicon wet method is also carried out in raceway groove designed by Graphic transitions and corresponding pad region; use KOH to the etching characteristic of silicon; etch the raceway groove of certain ramp slope; and hot oxygen again, at the top layer of silicon growth silica to form the protection to silicon.The corresponding Graphic transitions designed by pad region in the back side, dry etching falls top layer silica, and then using silica as mask, KOH wet etching silicon, the raceway groove that silicon is etched to pad corresponding region, front is worn to carve.Then at front deposition adsorbent, adsorbent can select Ti(titanium), as the page film material that SAES company provides, this material is the conventional adsorbent of gyroscope processing wafer level encapsulant, and graphical, front plated metal copper (Cu), and graphically, rear plating makes the thickness of copper (Cu) reach 3 to 6 microns, forms other one deck of metal bonding hermetically-sealed construction.
As shown in Figure 5, the loci utilizing said method to make in aligning machine carries out the contraposition of movable structure silicon substrate and silicon vacuum cover plate, then in vacuum bonding machine, carry out metal diffusion interlinked, vacuum values can set according to design needs, completes the gyrostatic manufacture process of capacitance-type triaxial.
As shown in Figure 6 be the shape of electrical outer connecting structure (Pad) exposed area of vacuum cover plate, only hollow out on the partial width of every chips, still can to keep after having etched and between connection, achieve the integrality of full wafer cover plate.In other words, in full wafer wafer, and between vacuum cover plate connect together, only hollow out on partial width, facilitates the transfer in transmitting procedure and operation.
All Graphic transitions mentioned above utilize spin coating photoresist, and the light shield then through corresponding design carries out exposing and developing forming required figure.
The invention discloses a kind of machining manufacture of capacitive triaxial micro gyroscope, two panels silicon substrate and thick polysilicon epitaxy technology are provided, polysilicon movable structure bottom electrode plate can be realized detect, the connection of the inner electrical structure of seal chamber and the electrical outer connecting structure of containment portion and single-layer metal electrical interconnects and intracellular signaling can be realized.Interconnection line intersection region, use epipolysilicon layer electrically to put up a bridge and avoid the short circuit of single-layer metal interconnection, this electrically puts up a bridge by ground connection anchor point 7, and inside and outside cavity, electric connection layer 15, electrically outer connecting structure supporting construction 16 realize.Compare traditional SOI technology and silex glass bonding technology cost advantage of the present invention is obvious, can do on the basis of the wafer of structure sheaf, realize the Vacuum Package of wafer level in saving a slice.And polysilicon thickness controls simple, can realize multiple different thickness requirement.And thick polysilicon is put up a bridge, the operational mode that is connected with metal is flexible and changeable, the wiring limitation of labyrinth can be broken through, reduce the concaveconvex structure impact that multi-layer metal wiring brings, reduce one deck light shield and multi-step process step, improving product stability and reliability simultaneously.
According to the present invention, a kind of silicon epitaxy manufacture method of capacitive triaxial micro gyroscope is provided, it is characterized in that:
Its movable structure and substrate comprise silicon substrate 1, insulating layer of silicon oxide 2, first throughholes 3, anchor point are electrically connected metal level 4, silicon dioxide sacrificial layer 5, second throughholes 6, ground connection anchor point 7, metal pressing structure sheaf 8, unsettled comb 9, can charged anchor point 10, first cavity 11, insulation anchor point 12, bottom crown 13, electrically outer connecting structure pad 14, electric connection layer 15 and electrical outer connecting structure supporting construction 16 inside and outside cavity;
The manufacturing step of its movable structure and substrate comprises:
Using silicon substrate 1 as substrate layer, silicon substrate 1 grows oxidation insulating layer 2, oxidation insulating layer 2 is made structure through photoetching and is formed the first throughholes 3, and on oxidation insulating layer 2, grow layer of metal and structure patterning, generate anchor point respectively and be electrically connected metal level 4, electric connection layer 15 inside and outside bottom crown 13 and cavity, wherein the first throughholes 3 and anchor point are electrically connected metal level 4 and are connected, anchor point is electrically connected metal level 4 and is connected by the second throughholes 6 with silicon dioxide sacrificial layer 5, bottom crown 13 is with insulation anchor point 12 and can be connected by charged anchor point 10, inside and outside cavity, electric connection layer 15 is connected with electrical outer connecting structure supporting construction 16 with ground connection anchor point 7, finally growing metal pressing structure layer 8 on ground connection anchor point 7, electrical outer connecting structure supporting construction 16 grows electrical outer connecting structure pad14, and through the release of silicon dioxide sacrificial layer 5, form the first cavity 11 and unsettled comb 9,
Its vacuum cover plate comprises thin silicon substrate a, the first oxidation insulating layer b, insulating layer openings c, silicon opening d, the first thermal oxide layer e, the second insulating barrier f, cavity g, metal pressing structure sheaf h, the second thermal oxide layer i and adsorbent j;
The manufacturing step of its vacuum cover plate comprises:
With thin silicon substrate a for substrate, the back side grows the first oxidation insulating layer b, forms insulating layer openings c thereafter, forms silicon opening d, grow the first thermal oxide layer e thereafter on silicon opening d through over etching;
Front grows the second insulating barrier f, and graphically, graphic based etches cavity g, grows the second thermal oxide layer i thereafter on cavity framework, and on the insulating barrier f of front second growing metal pressing structure layer h and adsorbent j;
Finally, movable structure and substrate and vacuum cover plate are realized pressure, generate metal eutectic layer k.
According to a preferred embodiment of the invention, wherein bottom crown 13, anchor point electric connection metal level 4 and electrical outer connecting structure pad14 are made up of same layer metal, and this layer of metal can insert the first throughholes 3, the interconnection of realization and silicon substrate 1.
According to a preferred embodiment of the invention, wherein ground connection anchor point 7, unsettled comb 9, electrically outer connecting structure supporting construction 16 are graphically realized afterwards by same layer epitaxial polysilicon layer.
According to a preferred embodiment of the invention, wherein electrically outer connecting structure pad14 and metal pressing structure sheaf are realized by same layer metal.
According to a preferred embodiment of the invention; wherein the first cavity 11 forms by with silicon dioxide sacrificial layer 5 and insulating layer of silicon oxide 2 before being released; partial oxidation sacrificial silicon layer 5 is subject to the protection of ground connection anchor point 7 in dispose procedure; partial oxidation silicon insulating barrier 2 is subject to the protection that anchor point is electrically connected electric connection layer 15 inside and outside metal level 4, bottom crown 13 and cavity in dispose procedure; protected part finally stays, and does not have protected part to be released formation first cavity 11.
According to a preferred embodiment of the invention, wherein can pass through between bottom crown 13 can realize interconnection by the conductive silicon structure on top layer by charged anchor point 10, can with the top layer electric bridge of an anchor point as connection two underlying substrate.
According to a preferred embodiment of the invention, the wherein partial width place opening of vacuum cover plate on single chips, conveniently to take in disk transfer process.
According to the silicon epitaxy manufacturer that the invention provides a kind of capacitive triaxial micro gyroscope, comprise the following steps:
1) provide the silicon substrate of a slice twin polishing, the process combination that thickness can adopt grinding to add wet method release stress is controlled.
2) CVD(Chemical vapor deposition chemical vapour deposition (CVD) is utilized in the wherein one side of this silicon substrate) or hot oxygen method deposits or growth layer of silicon dioxide, the basis of this silica deposits one deck silicon nitride with CVD, the effect of silica and silicon nitride is as the insulating barrier between bottom metal (the first metal layer) and silicon, and wherein silica is also as the stress-buffer layer of silicon nitride and silicon substrate.
3) through the combination layer of light mask image transition diagram silicon nitride and silica, and etch formation first throughholes through RIE, the effect of this through hole is the connection forming bottom metal (i.e. the first metal layer) and silicon substrate, formation ground connection.
4) magnetic control sputtering plating deposition bottom metal (i.e. first layer metal) graphical, the effect of this metal level realizes bottom crown and electrical and signal interconnection.
5) on bottom metal (i.e. the first metal layer), utilize CVD to deposit thick layer silica, this silicon dioxide layer realizes metal surface insulation, and utilizes this thick silicon dioxide layer to serve as sacrifice layer.
6) through light mask image transfer and through RIE(Reaction Ion etch, plasma vapor phase etchant) etching makes thick silicon dioxide layer pattern, and exposing can charged anchor point, insulation anchor point, the join domain of ground connection anchor point.
7) thick polysilicon extension, grows the thickness that design is wanted, and through surface finish after extension completes, makes polysilicon surface smooth.
8) at thick polysilicon top layer magnetic control sputtering plating second layer metal (i.e. the second metal level), and graphically, the effect of this metal level is the wherein one deck forming electrical outer connecting structure Pad and hermetically-sealed construction bonded layer.
9) again graphical, the figure of the gyroscope gauge outfit of design is transferred to thick polysilicon and second layer metal (i.e. the second metal level) surface through light shield, DRIE(Deep reaction ion etch, dark silicon etching), comb required for formation, cantilever beam, various independent anchor point and movable structure sheaf.And thick polysilicon layer, can forming electrical interconnects between charged anchor point, plays the effect of three-dimensional bridge joint.
10) the silica release bottom thick polysilicon, form cavity, and make comb, the structures such as cantilever beam are unsettled.
11) provide another sheet silicon substrate as vacuum cover plate, the process combination that same thickness can adopt grinding to add wet method release stress is controlled.
12) utilize CVD or hot oxygen method deposition in the wherein one side of this silicon substrate or grow layer of silicon dioxide, through Graphic transitions, two step RIE etchings form designed figure as alignment mark point.
13) utilize CVD or hot oxygen method deposition at the another side of alignment mark point or grow layer of silicon dioxide, etch through Graphic transitions with to the RIE of silica, spill the region of corresponding movable structure and the region of electrical outer connecting structure pad, through wet etching, etch the degree of depth of needs, the groove required for formation.
14) this silicon substrate alignment mark face Graphic transitions and through RIE etching, expose designed electrical external structure pad and connect region.Through wet etching, the silicon in pad region is carved and wears.
15) at the silicon substrate backside deposition adsorbent of alignment mark, the effect of adsorbent assists to reach required condition of high vacuum degree.
16) at the silicon substrate backside deposition third layer metal (i.e. the 3rd metal level) of alignment mark, and graphically, the effect of this metal level is the corresponding other one deck forming hermetically-sealed construction bonded layer.
17) two panels silicon substrate realizes metal bonding through contraposition in vacuum bonding machine, and this technique completes.
Compared with prior art, the present invention has distinguishing feature and advantage, process like this is only used two panels silicon substrate and can be detected realizing polysilicon movable structure bottom electrode plate, the connection of the inner electrical structure of seal chamber and the electrical outer connecting structure of containment portion and single-layer metal electrical interconnects and intracellular signaling, and achieve the vacuum seal of wafer level.
The technical process of above preferred embodiment is the one in the processing method of advanced three axle gyroscopes, when can adjust technological parameter and processing step without prejudice to when this technological process and principle.Again emphasize, the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. a silicon epitaxy manufacture method for capacitive triaxial micro gyroscope, is characterized in that:
Its movable structure and substrate comprise silicon substrate (1), insulating layer of silicon oxide (2), first throughholes (3), anchor point is electrically connected metal level (4), silicon dioxide sacrificial layer (5), second throughholes (6), ground connection anchor point (7), metal pressing structure sheaf (8), unsettled comb (9), can charged anchor point (10), first cavity (11), insulation anchor point (12), bottom crown (13), electrical outer connecting structure pad(14), electric connection layer (15) and electrical outer connecting structure supporting construction (16) inside and outside cavity,
The manufacturing step of its movable structure and substrate comprises:
Using silicon substrate (1) as substrate layer, silicon substrate (1) grows insulating layer of silicon oxide (2), oxidation insulating layer (2) is made structure through photoetching and is formed the first throughholes (3), and on oxidation insulating layer (2), grow layer of metal and structure patterning, generate anchor point respectively and be electrically connected metal level (4), electric connection layer (15) inside and outside bottom crown (13) and cavity, wherein the first throughholes (3) and anchor point are electrically connected metal level (4) and are connected, anchor point is electrically connected metal level (4) and is connected with the second throughholes (6) that silicon dioxide sacrificial layer (5) is formed by etching, bottom crown (13) is with insulation anchor point (12) and can be connected by charged anchor point (10), inside and outside cavity, electric connection layer (15) is connected with electrical outer connecting structure supporting construction (16) with ground connection anchor point (7), finally at the upper growing metal pressing structure layer (8) of ground connection anchor point (7), at the electrical outer connecting structure pad(14 of the upper growth of electrical outer connecting structure supporting construction (16)), and through the release of silicon dioxide sacrificial layer (5), form the first cavity (11) and unsettled comb (9),
Its vacuum cover plate comprise thin silicon substrate (a), the first oxidation insulating layer (b), insulating layer openings (c), silicon opening (d), the first thermal oxide layer (e), the second insulating barrier (f), cavity (g), metal pressing structure sheaf (h), the second thermal oxide layer (i) with adsorbent (j);
The manufacturing step of its vacuum cover plate comprises:
With thin silicon substrate (a) for substrate, the back side grows the first oxidation insulating layer (b), forms insulating layer openings (c) thereafter, forms silicon opening (d) through over etching, thereafter at upper growth first thermal oxide layer (e) of silicon opening (d);
Front grows the second insulating barrier (f), and graphically, graphic based etches cavity (g), grows the second thermal oxide layer (i) thereafter on cavity framework, and at upper growing metal pressing structure layer (h) of front second insulating barrier (f) and adsorbent (j);
Finally, movable structure and substrate and vacuum cover plate are realized pressure, generates metal eutectic layer (k).
2. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein bottom crown (13), anchor point are electrically connected metal level (4) and electrical outer connecting structure pad(14) be made up of same layer metal, and this layer of metal can insert the first throughholes (3), the interconnection of realization and silicon substrate (1).
3. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein ground connection anchor point (7), unsettled comb (9), electrically outer connecting structure supporting construction (16) are graphically realized afterwards by same layer epitaxial polysilicon layer.
4. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein electrical outer connecting structure pad(14) and metal pressing structure sheaf realized by same layer metal.
5. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein the first cavity (11) forms by with silicon dioxide sacrificial layer (5) and insulating layer of silicon oxide (2) before being released, partial oxidation sacrificial silicon layer (5) is subject to the protection of ground connection anchor point (7) in dispose procedure, partial oxidation silicon insulating barrier (2) is subject to anchor point and is electrically connected metal level (4) in dispose procedure, the protection of electric connection layer (15) inside and outside bottom crown (13) and cavity, protected part finally stays, protected part is not had to be released formation first cavity (11).
6. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein pass through between bottom crown (13) interconnection to be realized by the conductive silicon structure on top layer by charged anchor point (10), can with the top layer electric bridge of an anchor point as connection two underlying substrate.
7. the silicon epitaxy manufacture method of capacitive triaxial micro gyroscope according to claim 1, wherein the partial width place opening of vacuum cover plate on single chips, conveniently to take in disk transfer process.
8. a silicon epitaxy manufacture method for capacitive triaxial micro gyroscope, is characterized in that comprising the steps:
1) provide the silicon substrate of a slice twin polishing, the process combination that thickness adopts grinding to add wet method release stress is controlled;
2) utilize chemical vapor deposition (CVD) or hot oxygen method deposition in the wherein one side of this silicon substrate or grow layer of silicon dioxide, the basis of this silica deposits one deck silicon nitride with CVD, the effect of silica and silicon nitride is as the insulating barrier between bottom metal and silicon, and wherein silica is also as the stress-buffer layer of silicon nitride and silicon substrate;
3) through the combination layer of light mask image transition diagram silicon nitride and silica, and etch formation first throughholes through RIE, the effect of this through hole forms bottom metal, i.e. the connection of the first metal layer and silicon substrate, formation ground connection;
4) magnetic control sputtering plating deposition the first metal layer is also graphical, and the effect of this metal level realizes bottom crown and electrical and signal interconnection;
5) utilize CVD to deposit thick layer silica on the first metal layer, this silicon dioxide layer realizes metal surface insulation, and utilizes this thick silicon dioxide layer to serve as sacrifice layer;
6) make thick silicon dioxide layer pattern through light mask image transfer through plasma vapor phase etchant (RIE) etching, exposing can charged anchor point, insulation anchor point, the join domain of ground connection anchor point;
7) thick polysilicon extension, grows the thickness that design is wanted, and through surface finish after extension completes, makes polysilicon surface smooth;
8) at thick polysilicon top layer magnetic control sputtering plating second metal level, and graphically, the effect of this metal level is the wherein one deck forming electrical outer connecting structure Pad and hermetically-sealed construction bonded layer;
9) again graphical, the figure of the gyroscope gauge outfit of design is transferred to thick polysilicon and the second layer on surface of metal through light shield, dark silicon etching (DRIE), comb required for formation, cantilever beam, various independent anchor point and movable structure sheaf, and thick polysilicon layer is forming electrical interconnects between charged anchor point, plays the effect of three-dimensional bridge joint;
10) the silica release bottom thick polysilicon, form cavity, and make comb, cantilever beam structure is unsettled;
11) provide another sheet silicon substrate as vacuum cover plate, the process combination that same thickness adopts grinding to add wet method release stress is controlled;
12) utilize CVD or hot oxygen method deposition in the wherein one side of this silicon substrate or grow layer of silicon dioxide, through Graphic transitions, two step RIE etchings form designed figure as alignment mark point;
13) utilize CVD or hot oxygen method deposition at the another side of alignment mark point or grow layer of silicon dioxide, etch through Graphic transitions with to the RIE of silica, spill the region of corresponding movable structure and the region of electrical outer connecting structure Pad, through wet etching, etch the degree of depth of needs, the groove required for formation;
14) this silicon substrate alignment mark face Graphic transitions and through RIE etching, expose designed electrical outer connecting structure Pad region, through wet etching, the silicon in electrical outer connecting structure pad region carve wear;
15) at the silicon substrate backside deposition adsorbent of alignment mark, the effect of adsorbent assists to reach required condition of high vacuum degree;
16) at silicon substrate backside deposition the 3rd metal level of alignment mark, and graphically, the effect of this metal level is the corresponding other one deck forming hermetically-sealed construction bonded layer;
17) two panels silicon substrate realizes metal bonding through contraposition in vacuum bonding machine, and this technique completes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110371162.2A CN103121658B (en) | 2011-11-21 | 2011-11-21 | The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110371162.2A CN103121658B (en) | 2011-11-21 | 2011-11-21 | The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103121658A CN103121658A (en) | 2013-05-29 |
| CN103121658B true CN103121658B (en) | 2015-10-28 |
Family
ID=48452854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110371162.2A Active CN103121658B (en) | 2011-11-21 | 2011-11-21 | The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103121658B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103523743B (en) * | 2013-10-28 | 2016-06-29 | 北京大学科技开发部 | A kind of miniature friction formula energy collecting device and preparation method thereof |
| CN104671192A (en) * | 2013-11-29 | 2015-06-03 | 无锡华润上华半导体有限公司 | Manufacturing method of movable mass block for micro electro mechanical system |
| CN104671194B (en) * | 2013-12-03 | 2016-08-17 | 中芯国际集成电路制造(上海)有限公司 | Prevent MEMS that structure sheaf comes off and preparation method thereof |
| US9714166B2 (en) * | 2014-07-16 | 2017-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film structure for hermetic sealing |
| CN105987687B (en) * | 2015-02-15 | 2019-06-28 | 水木智芯科技（北京）有限公司 | New silicon nitride obstructs three-axis gyroscope technique |
| CN105947969B (en) * | 2016-04-27 | 2018-04-17 | 上海华虹宏力半导体制造有限公司 | A kind of manufacture method of MEMS motion sensors product silicon chip |
| CN107169416B (en) * | 2017-04-14 | 2023-07-25 | 杭州士兰微电子股份有限公司 | Ultrasonic fingerprint sensor and manufacturing method thereof |
| CN109974681B (en) * | 2019-04-09 | 2021-01-26 | 东南大学 | Disc type resonance gyroscope based on optical waveguide and processing and packaging method thereof |
| CN112194097B (en) * | 2020-12-07 | 2021-05-07 | 中芯集成电路制造(绍兴)有限公司 | Inertial sensor and forming method thereof |
| CN112777563B (en) * | 2021-01-12 | 2023-09-26 | 清华大学 | Manufacturing method of airtight radio frequency MEMS device and airtight radio frequency MEMS device |
| CN114791295A (en) * | 2021-01-25 | 2022-07-26 | 群创光电股份有限公司 | Electronic device and method for manufacturing sensor in electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391673B1 (en) * | 1999-11-04 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level |
| EP1352877A2 (en) * | 2002-04-12 | 2003-10-15 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
| EP1405821A2 (en) * | 2002-10-04 | 2004-04-07 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
| CN101339202A (en) * | 2007-07-02 | 2009-01-07 | 株式会社电装 | Semiconductor device and manufacturing method of the same |
| CN201653422U (en) * | 2010-01-21 | 2010-11-24 | 深迪半导体(上海)有限公司 | Double-shaft MEMS gyroscope |
| CN102001614A (en) * | 2009-08-28 | 2011-04-06 | 美商明锐光电股份有限公司 | Method and system for MEMS devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040147056A1 (en) * | 2003-01-29 | 2004-07-29 | Mckinnell James C. | Micro-fabricated device and method of making |
-
2011
- 2011-11-21 CN CN201110371162.2A patent/CN103121658B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391673B1 (en) * | 1999-11-04 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of fabricating micro electro mechanical system structure which can be vacuum-packed at wafer level |
| EP1352877A2 (en) * | 2002-04-12 | 2003-10-15 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
| EP1405821A2 (en) * | 2002-10-04 | 2004-04-07 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
| CN101339202A (en) * | 2007-07-02 | 2009-01-07 | 株式会社电装 | Semiconductor device and manufacturing method of the same |
| CN102001614A (en) * | 2009-08-28 | 2011-04-06 | 美商明锐光电股份有限公司 | Method and system for MEMS devices |
| CN201653422U (en) * | 2010-01-21 | 2010-11-24 | 深迪半导体(上海)有限公司 | Double-shaft MEMS gyroscope |
Non-Patent Citations (1)
| Title |
|---|
| Micro-G Silicon Accelerometer Using Surface Electrodes;Rober G Walmsley, et al.;《IEEE SENSORS》;20091231;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103121658A (en) | 2013-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103121658B (en) | The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope | |
| JP5123457B2 (en) | Manufacturing method of membrane sensor | |
| CN103922273B (en) | The manufacture method of stack combinations formula MEMS chip and stack combinations formula MEMS chip thereof | |
| CN110550598B (en) | Resonant differential pressure sensor and preparation method thereof | |
| US8558327B2 (en) | Micromechanical component and corresponding production method | |
| CN105874312B (en) | Inertia and pressure sensor on a single chip | |
| US8828771B2 (en) | Sensor manufacturing method | |
| US9840410B2 (en) | Micromechanical component | |
| CN104860258B (en) | Aluminum Nitride (ain) Devices With Infrared Absorption Structural Layer | |
| CN110668394B (en) | Preparation method of anti-interference overload-resistant MEMS accelerometer | |
| CN104140072B (en) | The integrated chip of MEMS and integrated circuit and manufacture method thereof | |
| CN207689049U (en) | MEMS device | |
| CN105174201A (en) | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof | |
| WO2015051084A1 (en) | Inertial and pressure sensors on single chip | |
| TWI634069B (en) | Hybrid integrated component and process for its production | |
| CN105097809A (en) | Mechanical stress-decoupling in semiconductor device | |
| CN103575260A (en) | Micro gyroscope and processing manufacturing method thereof | |
| CN105984830A (en) | Manufacturing method of integrated circuit fused MEMS sensor | |
| US10988377B2 (en) | Method for producing a stress-decoupled micromechanical pressure sensor | |
| CN203269551U (en) | Integrated chip of MEMS and integrated circuit | |
| CN102381681A (en) | Micromechanical structure and integrated circuit monolithic integrated processing method | |
| CN108117034A (en) | MEMS component and its manufacturing method | |
| CN103420330A (en) | Manufacturing method applied to micro device wafer level encapsulating through hole metal interconnection | |
| CN108463431A (en) | Method for manufacturing multilayer MEMS component and corresponding multilayer MEMS component | |
| CN110402233A (en) | For manufacturing the method for being used for the MEMS device of micro mechanical pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220704 Address after: 528400 room 103, East 1st floor, building 2, Shennong Road, Torch Development Zone, Zhongshan City, Guangdong Province Patentee after: Guangdong Tianmu Zhixin Sensor Technology Co.,Ltd. Address before: 100084 5th floor, block B, science and technology building, Tsinghua Science Park, Haidian District, Beijing Patentee before: TUMEMS TECHNOLOGY (BEIJING) CO.,LTD. |
|
| TR01 | Transfer of patent right |