CN207395752U - A kind of micro- inertia component of tunnel magnetoresistive detection - Google Patents
A kind of micro- inertia component of tunnel magnetoresistive detection Download PDFInfo
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- CN207395752U CN207395752U CN201721017176.3U CN201721017176U CN207395752U CN 207395752 U CN207395752 U CN 207395752U CN 201721017176 U CN201721017176 U CN 201721017176U CN 207395752 U CN207395752 U CN 207395752U
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Abstract
A kind of micro- inertia component of tunnel magnetoresistive detection, primary structure is by bonding substrate, braced frame, sensitive-mass block, detect beam, link block, cantilever beam, detect magnet, tunnel magnetoresistance element, signal line group into, sensitive-mass block is set on the support frame, detection combination beam, cantilever beam, detection magnet is set on sensitive-mass block, detection combination beam is by detection beam, link block forms, tunnel magnetoresistance element is arranged in bonding substrate recess and corresponding with detecting magnet above sensitive-mass block, there is high-sensitivity characteristic to Weak magentic-field variation, the design of this apparatus structure is reasonable, simply, without driving, easy single-chip integration, it is suitble to micromation.
Description
Technical field
A kind of technical field of the utility model category inertial navigation, and in particular to micro- inertia component of tunnel magnetoresistive detection.
Background technology
Inertial technology mainly includes the important key technology such as inertial guidance, inertial navigation, inertia measurement, is unique while has
There is autonomous, real-time, continuous, interference-free movable information cognition technology.Inertial navigation technology is mainly the measurement of attitude angle,
Middle core devices are gyro and accelerometer, in the fields such as modern industry control, aerospace, national defense and military, consumer electronics hair
Wave important function.
At present, micro- inertia component is mostly discrete integrated using uniaxial inertia device gyro, discrete integrated simple with design
The advantages of, but manifest the problems such as volume is big, integrated level is low.With the continuous improvement of MEMS technology, measurement total space posture letter
For the micro- inertia component of single-chip integration of breath by as the inexorable trend of development, the micro- inertia component of single-chip integration is applied to inertial navigation system
In system, there are the advantages such as small, integrated level is high.
The core of micro- inertia system is gyro, so the indexs such as the volume of micro- inertia system, cost, precision, overload capacity
Depending on used gyro performance.Gyro is divided into three categories by operation principle, is mechanical gyro, optical gyroscope and MEMS respectively
Gyro, mechanical gyroes precision is high but volume is larger, and load resistant power is not strong；Optical gyroscope relative volume is smaller but of high cost, only
Can apply to high-end field, tactical missile, intelligent projectile, unmanned plane, unmanned vehicle, it is steady as surely take aim at etc. weapon systems because cost,
Volume and overload performance requirement limitation are larger, this allows for MEMS gyros because of the property such as at low cost, small, strong shock resistance
Can possess the widely used advantage in micro- inertia system.
In the prior art, the common detection mode of micromechanical gyro has pressure resistance type, piezoelectric type, condenser type, resonance tunnel-through
Formula, electron tunneling effect formula etc., wherein piezoresistive effect detect, and sensitivity is relatively low, and temperature coefficient is big, thus limits accuracy of detection
Further improve；, it is necessary to often correct, zero is slow for the sensitivity of piezoelectric effect detection easily drift, unsuitable follow-on test；Capacitance
Detection uses comb structure, and displacement resolution is higher, and capacitance structure is processed suitable for MEMS technology, but with further miniature
Change, broach voltage easily punctures, during side knock also can pull-in failure, especially broach precision of manufacturing process requirement is high, into
Product rate is relatively low, restricts the development of the direction；The sensitivity of resonance tunneling effect is tested compared with the high an order of magnitude of silicon piezoresistive effect
Obtained detection sensitivity is relatively low, there are the problem of be that bias voltage easily drifts about when gyro drives, cause gyro steady
Fixed work；Electron tunneling effect formula device fabrication is extremely complex, and also relative difficult realizes that yield rate is low to detection circuit, difficult
With normal work, it is unfavorable for integrating, is particularly difficult the distance between control tunnel knot tunnel point and electrode plate in nanoscale, it can not
Ensure normal operation of sensor.Therefore, it is badly in need of carrying out the structural research of new effect testing principle.
Spin effect of the tunnel magneto-resistance effect based on electronics is separated with insulation in pinned magnetic layer and free magnetic layer middle ware
The magnetic multilayer film structure of the non-magnetosphere of body or semiconductor, when free magnetic layer is under the action of outfield, magnetization direction
Change, and the direction of magnetization of pinning layer is constant, two magnetospheric intensity of magnetization relative orientations change at this time, then can be in horizontal stroke
It is tied across the magnetic tunnel of insulating layer and observes big resistance variations, this physical effect is based on electronics in insulating layer
Tunneling effect, because referred to herein as tunnel magneto-resistance effect, tunnel magneto-resistance effect have the excellent of " high sensitivity, easily micromation, detection "
Gesture, this patent are exactly the inspection that tunnel magneto-resistance effect is applied to tri-axis angular rate and 3-axis acceleration signal using this advantage
It surveys.
The utility model devises a kind of micro- inertia component of tunnel magnetoresistive detection, and overall construction design rationally, simply, collects
It is high into degree, without driving, small, the three axis disresonance type microthrust tests and 3-axis acceleration by no driving of this patent novelty
Meter is integrated into same framework, and tunnel magneto-resistance effect is applied in micro- inertia component, realizes that tri-axis angular rate and three axis add
The detection of speed signal is not yet shown in the technical field and has been reported that, is the technical field that world technology circle is explored.
Utility model content
The purpose of this utility model designs a kind of micro- inertia group of tunnel magnetoresistive detection aiming at the deficiency of background technology
Part, makes that micro- inertia component overall structure is simpler, easy single-chip integration.
Technical solution
A kind of micro- inertia component of tunnel magnetoresistive detection, micro- inertia component application tunnel magneto-resistance effect carry out angle speed
Rate and acceleration detection, micro- inertia component include：
As the bonding substrate of carrier, the bonding substrate is hollow frame structure, at the inner circumferential side of bonding substrate,
And centre position is fixedly installed tunnel magnetoresistance element；
With being bonded the fixed braced frame of substrate, it is connected in the centre position of the braced frame by cantilever beam structure
Sensitive-mass block, the position directly above that tunnel magnetoresistance element is corresponded at the braced frame inner rim are provided with detection combination beam,
The detection combination beam includes detection beam, link block；
The detection beam is the elongated beam structure of at least one layer of bending fold, and connects the support by the link block
Frame detects the displacement of micro- inertia component inertia force and centrifugal force, the sensitivity of increase detection displacement.
Further, the braced frame is hollow square frame, and the inner rim middle of the square frame is set
There are detection magnet and sensitive-mass block；
Described detection beam one end connects braced frame by the link block, and the other end connects the sensitive-mass block.
Further, the sensitive-mass block positioned at the braced frame middle passes through four cantilever beams and support frame respectively
The inner rim of frame is fixedly connected；
The one side of the sensitive-mass block sets the detection magnet；
The detection magnet is correspondingly arranged with the tunnel magnetoresistance element, and can interact position.
Further, the link block is used to connect braced frame and detection beam；
The length of the beam of the detection beam is much larger than its width, for connecting sensitive-mass block and link block.
Further, the detection combination beam includes the first detection combination beam, the second detection combination beam, the 3rd detection combination
Beam, the 4th detection combination beam, the 5th detection combination beam, the 6th detection combination beam, the 7th detection combination beam, the 8th detection combination
Beam；
The sensitive-mass block includes the first sensitive-mass block, the second sensitive-mass block, the 3rd sensitive-mass block, the 4th quick
Feel mass block, the 5th sensitive-mass block；
The first sensitive-mass block both sides connect the first detection combination beam, the second detection combination beam respectively, described
Second sensitive-mass block both sides connect the 3rd detection combination beam, the 4th detection combination beam, the 3rd sensitive-mass respectively
Block both sides connect the 5th detection combination beam, the 6th detection combination beam respectively, and the 4th sensitive-mass block both sides connect respectively
Seven detection combination beams, the 8th detection combination beam；
The 5th sensitive-mass block is located at the centre position of the braced frame, and passes through cantilever beam and the tunnel magnetic
Resistance element is correspondingly arranged.
Further, the cantilever beam includes the first cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam, institute
State the 5th sensitive-mass block respectively by first cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam with it is described
The surrounding vertical connection of braced frame.
Further, the tunnel magnetoresistance element includes the first tunnel magnetoresistance element, the second tunnel magnetoresistance element, the 3rd tunnel
Road magnetoresistive element, the 4th tunnel magnetoresistance element, the 5th tunnel magnetoresistance element；
The bonding substrate overall structure is square, and intermediate processed through technique is etched with a square groove, right on groove
Claim to set the first tunnel magnetoresistance element, the second tunnel magnetoresistance element, the 3rd tunnel magnetoresistance element, the 4th tunnel magnetoresistance element, and
In the middle position of the bonding substrate, the 5th tunnel magnetoresistance element is set.
Further, in the first tunnel magnetoresistance element, the second tunnel magnetoresistance element, the 3rd tunnel magnetoresistance element, the 4th tunnel
The first signal wire, secondary signal line are respectively provided on road magnetoresistive element, the 5th tunnel magnetoresistance element.
Further, in the first sensitive-mass block, the second sensitive-mass block, the 3rd sensitive-mass block, the 4th sensitivity
Mass block, the 5th sensitive-mass block one side be respectively arranged with the first detection magnet, second detection magnet, the 3rd detection magnet,
4th detection magnet, the 5th detection magnet.
Further, the detection magnet includes but not limited to permanent magnet, hot-wire coil, light-operated magnet；
For the detection magnet using ferromagnetic thin film, the detection magnet is fixed on sensitive-mass block one side, and with it is described
Tunnel magnetoresistance element correspondence is set every sky；
The tunnel magnetoresistance element is nanometer multilayer membrane structure, and the nanometer multilayer membrane structure is in semiconductive material substrate layer
On from top to bottom successively arrangement for top electrode layer, free magnetic layer, insulating layer, pinned magnetic layer, bottom electrode layer.
Advantageous effect
The utility model has apparent advance compared with background technology, this device is to use overall construction design, with
Bonding substrate is carrier, four the same sensitive-mass blocks of symmetrical arrangement and eight inspections in braced frame front, rear, left and right
Combination beam is surveyed, and coincide and is connected with braced frame, one sensitive-mass block and four cantilevers are set in braced frame centre position
Beam, and coincide and be connected with braced frame, in five the same tunnel magnetic of groove front, rear, left and right, middle symmetric position setting structure
Resistance element sets detection magnet and, detection group corresponding with the tunnel magnetoresistance element that groove top is set on sensitive-mass block
It closes beam to be made of link block, detection beam, tunnel magnetoresistance element is by substrate layer, free magnetic layer, insulating layer, pinned magnetic layer, top
Electrode layer, bottom electrode layer composition, the design of this apparatus structure is rationally simple, without driving, easy single-chip integration, easy to use, reliable
Property is good, is suitable for the measurement of high speed rotating object angular speed and acceleration.
Description of the drawings
Fig. 1 is overall structure diagram
Fig. 2 is overall structure top view
Fig. 3 is overall structure side view
Fig. 4 is bonding board structure figure
Fig. 5 is bonding substrate top view
Fig. 6 is support frame structure figure
Fig. 7 is braced frame top view
Fig. 8 is sensitive-mass block structural diagram
Fig. 9 is sensitive-mass block top view
Figure 10 is sensitive-mass block side view
Figure 11 is sensitive-mass block and detection combination girder construction figure
Figure 12 is sensitive-mass block and detection combination beam top view
Figure 13 is sensitive-mass block and detection combination beam side view
Figure 14 is sensitive-mass block and cantilever beam structure figure
Figure 15 is sensitive-mass block and cantilever beam top view
Figure 16 is sensitive-mass block and cantilever beam side view
Figure 17 detects magnet and tunnel magnetoresistance element position assumption diagram for detection Liang Chu
Figure 18 detects magnet and tunnel magnetoresistance element position sectional view for detection Liang Chu
Figure 19 is detection magnet at cantilever beam and tunnel magnetoresistance element position assumption diagram
Figure 20 is detection magnet at cantilever beam and tunnel magnetoresistance element position front view
Figure 21 is tunnel magnetoresistance element nanometer multilayer membrane structure
Figure 22 (a) is the sensitive-mass block schematic diagram of another embodiment
Figure 22 (b) is the detection combination beam schematic diagram of another embodiment
Shown in figure, list of numerals is as follows：
1- braced frames；2- the first sensitive-mass blocks；3- the second sensitive-mass blocks；The 3rd sensitive-mass blocks of 4-；5- the 4th
Sensitive-mass block；The 5th sensitive-mass blocks of 6-；7- the first detection combination beams；8- the second detection combination beams；The 3rd detection combinations of 9-
Beam；The 4th detection combination beams of 10-；The 5th detection combination beams of 11-；The 6th detection combination beams of 12-；The 7th detection combination beams of 13-；
The 8th detection combination beams of 14-；15- first detects magnet；16- second detects magnet；17- the 3rd detects magnet；18- the 4th is examined
Survey magnet；19- the 5th detects magnet；The first seat slots of 20-；The second seat slots of 21-；The 3rd seat slots of 22-；The 4th seat slots of 23-；24-
Five seat slots；25- first detects beam；26- second detects beam；27- the 3rd detects beam；28- the 4th detects beam；The first link blocks of 29-；
The second link blocks of 30-；The first cantilever beams of 31-；The second cantilever beams of 32-；The 3rd cantilever beams of 33-；The 4th cantilever beams of 34-；35- first
Detect space；36- second detects space；37- is bonded substrate；The first tunnel magnetoresistance elements of 38-；The second tunnels of 39-
Magnetoresistive element；The 3rd tunnel magnetoresistance elements of 40-；The 4th tunnel magnetoresistance elements of 41-；The 5th tunnel magnetoresistance elements of 42-；43-
One signal wire；44- secondary signal lines；45- substrate layers；46- bottom electrode layers；47- pinned magnetic layers；48- insulating layers；49- is magnetic
Free layer；50- top electrode layers；51- grooves.
Specific embodiment
The embodiment of the utility model is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and it is not intended that the utility model
Limitation.
In the description of the utility model, it is to be understood that term " " center ", " on ", " under ", "front", "rear",
The orientation or position relationship of the instructions such as "left", "right" are based on orientation shown in the drawings or position relationship, are for only for ease of and retouch
State the utility model and simplify description rather than instruction or imply signified combination or element must have specific orientation, with
Specific azimuth configuration and operation, therefore it is not intended that limitation to the utility model.In addition, the utility model embodiment
During description, the device positions relation such as " on ", " under ", "front", "rear", "left", "right" in all figures, using Fig. 1 as mark
It is accurate.
, it is necessary to illustrate in the description of the utility model, unless otherwise clearly defined and limited, term " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or be integrally connected；It can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in utility model.
The utility model is described further below in conjunction with attached drawing：
As shown in Figure 1, 2, 3, it is the structure diagram of the utility model embodiment, micro- inertia component includes bonding base
Plate 37, braced frame 1, the first sensitive-mass block 2, the second sensitive-mass block 3, the 3rd sensitive-mass block 4, the 4th sensitive-mass block
5th, the 5th sensitive-mass block 6, the first detection combination beam 7, the second detection combination beam 8, the 3rd detection combination beam 9, the 4th detection group
Close beam 10, the 5th detection combination beam 11, the 6th detection combination beam 12, the 7th detection combination beam 13, the 8th detection combination beam 14, the
One cantilever beam 31, the second cantilever beam 32, the 3rd cantilever beam 33, the 4th cantilever beam 34, first detection magnet 15, second detect magnet
16th, the 3rd detection magnet the 17, the 4th detects magnet the 18, the 5th and detects magnet 19, the first tunnel magnetoresistance element 38, the second tunnel magnetic
Resistance element 39, the 3rd tunnel magnetoresistance element 40, the 4th tunnel magnetoresistance element 41, the 5th tunnel magnetoresistance element 42, the first signal wire
35th, secondary signal line 36, bonding substrate 37 on set braced frame 1, and bonding reinforce, braced frame 1 it is forward and backward, left,
Right four positions set the second sensitive-mass block 3, the 4th sensitive-mass block 5, the first sensitive-mass block 2, the 3rd sensitive-mass block 4
With the first detection combination beam 7, the second detection combination beam 8, the 3rd detection combination beam 9, the 4th detection combination beam 10, the 5th detection group
Beam 11, the 6th detection combination beam 12, the 7th detection combination beam 13, the 8th detection combination beam 14 are closed, and is coincide with braced frame 1
Connection sets the 5th sensitive-mass block 6 and the first cantilever beam 31, the second cantilever beam the 32, the 3rd in the centre position of braced frame 1
Cantilever beam 33, the 4th cantilever beam 34, and coincide and connect with braced frame 1, in the first sensitive-mass block 2, the second sensitive-mass block
3rd, the 3rd sensitive-mass block 4, the top centre position of the 4th sensitive-mass block 5 set the first detection magnet 15, the second detection magnetic
The 16, the 3rd detection magnet the 17, the 4th of resistance detects magnet 18, and bonding is reinforced, the first sensitive-mass block 2, the 3rd sensitive-mass block 4
Left and right movement can be done on bonding substrate 37, the second sensitive-mass block 3, the 4th sensitive-mass block 5 can be done on bonding substrate 37
Forward and backward movement sets the 5th detection magnet 19 in the top centre position of the 5th sensitive-mass block 6, and bonding is reinforced, and the 5th is quick
Sense mass block 6 can move up and down on bonding substrate 37.
Fig. 4, shown in 5, to be bonded board structure figure, 37 overall structure of bonding substrate is square, is made of semi-conducting material,
Centre is etched with a rectangular recess 51 through technique processing, and the first tunnel magnetoresistance element is symmetrical arranged in the left and right portion of groove 51
38th, the 3rd tunnel magnetoresistance element 40, and bonding reinforce, the front and rear portions of groove 51 be symmetrical arranged the second tunnel magnetoresistance element 39,
4th tunnel magnetoresistance element 41, and bonding is reinforced, and the 5th tunnel magnetoresistance element 42 is set at the middle part of groove 51, and bond solid
Jail, the depth of groove 51 is more than the thickness of each tunnel magnetoresistance element, in the first tunnel magnetoresistance element 38, the second tunnel magnetoresistance element
39th, the 3rd tunnel magnetoresistance element 40, the 4th tunnel magnetoresistance element 41, the first signal of side arrangement of the 5th tunnel magnetoresistance element 42
Line 43, secondary signal line 44, the first signal wire 43, secondary signal line 44 are gold thread, for detect each tunnel magnetoresistive
Signal is drawn.
Fig. 6, it is support frame structure figure shown in 7, braced frame 1 is located on bonding substrate 37, is grown with being bonded substrate 37
Wide size is consistent, and the second seat slot 21, the 4th seat slot 23, the first seat slot 20, the are set in the front, rear, left and right portion of braced frame 1
Three seat slots 22, rectangular slot set the first sensitive-mass block 2, the detection of the first detection combination beam 7, second in the first seat slot 20
Combination beam 8 sets the second sensitive-mass block 3, the 3rd detection combination beam 9, the 4th detection combination beam 10 in the second seat slot 21,
3rd sensitive-mass block 4, the 5th detection combination beam 11, the 6th detection combination beam 12 are set in the 3rd seat slot 22, in the 4th seat slot
4th sensitive-mass block 4, the 7th detection combination beam 13, the 8th detection combination beam 14 are set in 23, in the interposition of braced frame 1
The 5th seat slot 24 is installed, be square slot, and the 5th sensitive-mass block 6 and the first cantilever beam 31, the are set in the 5th seat slot 24
Two cantilever beams 32, the 3rd cantilever beam 33, the 4th cantilever beam 34, and coincide and connected by each cantilever beam and braced frame 1, each seat slot
Width be more than sensitive-mass block width, provide space for each sensitive-mass block.
Shown in Fig. 8,9,10, for sensitive-mass block structural diagram, the first sensitive-mass block 2, the second sensitive-mass block the 3, the 3rd
Sensitive-mass block 4, the 4th sensitive-mass block 5, structure size is the same, in the first sensitive-mass block 2, the second sensitive-mass block 3,
Three sensitive-mass blocks 4,5 top of the 4th sensitive-mass block set the first detection magnet 15, second to detect magnet the 16, the 3rd and detect
Magnet the 17, the 4th detects magnet 18, and specifically by taking the first sensitive-mass block 2 as an example, first is set above the first sensitive-mass block 2
Magnet 15 is detected, both sides are symmetrical arranged the first detection space 35, second detection space 36, the first detection space
35th, the second detection space 36 is used to set detection combination beam.
It is sensitive-mass block and detection combination girder construction figure shown in Figure 11,12,13, sensitive-mass block can be first sensitive
Mass block 2, the second sensitive-mass block 3, the 3rd sensitive-mass block 4, the 4th sensitive-mass block 5, detection combination beam include the first inspection
Survey combination beam 7, the second detection combination beam 8, the 3rd detection combination beam 9, the 4th detection combination beam 10, the 5th detection combination beam 11,
6th detection combination beam 12, the 7th detection combination beam 13, the 8th detection combination beam 14, totally 8, structure size is the same, first
2 both sides of sensitive-mass block set the first detection combination beam 7, the second detection combination beam 8, are set in 3 both sides of the second sensitive-mass block
3rd detection combination beam 9, the 4th detection combination beam 10 set the 5th detection combination beam 11, the in 4 both sides of the 3rd sensitive-mass block
Six detection combination beams 12,5 both sides of the 4th sensitive-mass block set the 7th detection combination beam 13, the 8th detection combination beam 14, each to examine
Combination beam is surveyed to be made of two detection beams and a link block, two detection combination beams support a sensitive-mass blocks, specifically with
Exemplified by first sensitive-mass block 2, the first detection combination beam 7 and the second detection are symmetrical arranged in the both sides of the first sensitive-mass block 2
Combination beam 8, the first detection combination beam 7 detect beam 28 by the second link block the 30, the 3rd detection beam the 27, the 4th and form, the second detection
Combination beam 8 detects beam 26 by the first link block 29, first detection beam 25, second and forms, the first link block 29, the second link block
30, " T " shape, thickness and the first detection detection detection detection beam 28 and first of beam the 27, the 4th of beam the 26, the 3rd of beam 25, second are quick
Mass block 2, the second sensitive-mass block 3, the 3rd sensitive-mass block 4, the consistency of thickness of the 4th sensitive-mass block 5 are felt, for connecting
Braced frame 1 and detection beam, be symmetrical arranged in the both sides of the first link block 29 first detection beam 25, second detection beam 26, second
30 both sides of link block are symmetrical arranged the 3rd detection beam the 27, the 4th and detect beam 28, and each beam that detects is in " slender beam " structure, the i.e. length of beam
Degree is much larger than its width, and for connecting sensitive-mass block and link block, two detection beams are mutually parallel, and structure size is complete
It is identical, the first detection magnet 15 is set above the first sensitive-mass block 2, it is each detect magnet can be permanent magnet, hot-wire coil,
Light-operated magnet etc. all can generate the device in magnetic field.
Shown in Figure 14,15,16, be sensitive-mass block and cantilever beam structure figure, the first cantilever beam 31, the second cantilever beam 32,
3rd cantilever beam 33, the 4th cantilever beam 34, totally 4, structure size is the same, in the front, rear, left and right side of the 5th sensitive-mass block 6
Four positions set the second cantilever beam 32, the 4th cantilever beam 34, the first cantilever beam 31, the 3rd cantilever beam 33, for connecting the 5th
Sensitive-mass block 6 and braced frame 1, the cantilever beam are in flat, i.e., the width of beam is much larger than thickness, ensures in Z-direction
Rigidity much smaller than other both directions, and the first cantilever beam 31, the second cantilever beam 32, the 3rd cantilever beam 33, the 4th cantilever beam
34 thickness is much smaller than sensitive-mass block 6 and the thickness of braced frame 1.
Shown in Figure 17,18,19,20, magnet and the tunnel magnetoresistance element location drawing are detected for avris, sensitive-mass block can be the
One sensitive-mass block 2, the second sensitive-mass block 3, the 3rd sensitive-mass block 4, the 4th sensitive-mass block 5, top set the first inspection
It surveys magnet 15, second and detects the detection detection magnet 18 of magnet the 17, the 4th of magnet the 16, the 3rd, and 37 top of substrate is bonded with lower section
The first tunnel magnetoresistance element 38, the second tunnel magnetoresistance element 39, the 3rd tunnel magnetoresistance element 40, the 4th tunnel magnetoresistive set is first
Part 41 is corresponding, and specifically by taking the first sensitive-mass block 2 as an example, first is set in the top centre position of the first sensitive-mass block 2
Magnet 15 is detected, is connected by the first detection combination beam 7 and the second detection combination beam 8 with braced frame 1, and bonding is reinforced,
It is bonded on substrate 37 and is symmetrical arranged the first tunnel magnetoresistance element 38, the first tunnel magnetoresistance element 38 is located in groove X-axis, and closes on
37 edge of substrate is bonded, and, first tunnel magnetoresistive corresponding with the first detection magnet 15 that 2 top of the first sensitive-mass block is set
Element 38 is particularly located at the highfield change rate region of the first detection magnet 15 generation, and the first detection magnet 15 can be with the first tunnel
38 transposition of road magnetoresistive element.
Figure 19, shown in 20, magnet and the tunnel magnetoresistance element location drawing are detected at centroplasm gauge block, sensitive-mass block is the 5th
Sensitive-mass block 6, front, rear, left and right portion set the second cantilever beam 32, the 4th cantilever beam 34, the first cantilever beam 31, the 3rd cantilever
Beam 33, top set the 5th detection magnet 19, and the 5th tunnel magnetoresistive of 37 upper middle portion of substrate setting is bonded with lower section
Element 42 is corresponding, is particularly located at the highfield change rate region that the 5th detection magnet 19 generates, and the 5th detection magnet 19 can
With 42 transposition of the 5th tunnel magnetoresistance element.
Be tunnel magnetoresistance element nano-multilayer film structure chart shown in Figure 21, on semiconductive material substrate layer 45 from upper and
Under successively arrangement for top electrode layer 50, free magnetic layer 49, insulating layer 48, pinned magnetic layer 47, bottom electrode layer 46, when extraneous magnetic
When field changes, the middle tunnelling current of tunnel magnetoresistance element 38,39,40,41,42 changes, and shows violent resistance value and becomes
Change, signal output will be detected by top electrode layer 50 and bottom electrode layer 46.
Shown in Figure 22 (a), Figure 22 (b), for the sensitive-mass block of another embodiment and detection combination beam schematic diagram, sensitive matter
Gauge block can be the first sensitive-mass block 2, the second sensitive-mass block 3, the 3rd sensitive-mass block 4, the 4th sensitive-mass block 5, the
One sensitive-mass block, 2 both sides set the first detection combination beam 7, the second detection combination beam 8, are set in 3 both sides of the second sensitive-mass block
The 3rd detection combination beam 9, the 4th detection combination beam 10 are put, the 5th detection combination beam is set in 4 both sides of the 3rd sensitive-mass block
11st, the 6th detection combination beam 12,5 both sides of the 4th sensitive-mass block set the 7th detection combination beam 13, the 8th detection combination beam
14, each detection combination beam is made of two detection beams and a link block, and two detection combination beams support a sensitive-mass block,
Specifically by taking the first sensitive-mass block 2 as an example, the first detection combination beam 7 and are symmetrical arranged in the both sides of the first sensitive-mass block 2
Two detection combination beams 8, the first detection combination beam 7 can be detected the detection beam 28 of beam the 27, the 4th by the second link block the 30, the 3rd and formed,
Second detection combination beam 8 can be detected the detection beam 26 of beam 25, second by the first link block 29, first and be formed, in addition the first detection group
Closing beam 7 can also be made of the 3rd detection detection beam 28 of beam the 27, the 4th, and the second detection combination beam 8 can be by the first detection beam 25, second
Detection beam 26 forms, and the first detection beam 25, second detects beam the 26, the 3rd and detects the detection 28 flexible folding of beam of beam the 27, the 4th,
For multi-layer beam structure, the number of plies can be layer 1-7, and rigidity is smaller, and faint inertia force can make detection girder construction bend, and can have
Effect improves the detection sensitivity of micro- inertia component.
Utility model principle：
When there is the input of X-axis acceleration, two sensitive-mass blocks in X-axis, which are acted on by inertia force along X-axis, occurs fortune in the same direction
Dynamic, two sensitive-mass blocks drive the detection magnet of top two to occur compared with the tunnel magnetoresistance element above bonding substrate recess
Micro-displacement detects relative displacement between magnet and tunnel magnetoresistance element and changes, and tunnel magnetoresistance element is sensitive to small position
Changes of magnetic field caused by shifting, changes of magnetic field cause spinning electron tunnelling probability in tunnel magnetoresistance element to change and tunnel magnetoresistive occurs
So as to cause the resistance value of tunnel magnetoresistance element acute variation occurs for effect, can by the change in resistance for measuring tunnel magnetoresistance element
Realize the detection of X-axis acceleration.
When there is the input of Y-axis acceleration, two sensitive-mass blocks in Y-axis, which are acted on by inertia force along Y-axis, occurs fortune in the same direction
Dynamic, two sensitive-mass blocks drive the detection magnet of top two to occur compared with the tunnel magnetoresistance element above bonding substrate recess
Micro-displacement detects relative displacement between magnet and tunnel magnetoresistance element and changes, and tunnel magnetoresistance element is sensitive to small position
Changes of magnetic field caused by shifting, changes of magnetic field cause spinning electron tunnelling probability in tunnel magnetoresistance element to change and tunnel magnetoresistive occurs
So as to cause the resistance value of tunnel magnetoresistance element acute variation occurs for effect, can by the change in resistance for measuring tunnel magnetoresistance element
Realize the detection of Y-axis acceleration.
When there is the input of Z axis acceleration, the sensitive-mass block on Z axis is occurred along Z axis up or down by inertia force effect
Movement, sensitive-mass block drive top detection magnet that small position occurs compared with the tunnel magnetoresistance element above bonding substrate recess
It moves, detects relative displacement between magnet and tunnel magnetoresistance element and change, tunnel magnetoresistance element sensitivity causes to micro-displacement
Changes of magnetic field, changes of magnetic field causes in tunnel magnetoresistance element spinning electron tunnelling probability to change and tunnel magneto-resistance effect occurs,
Acute variation occurs so as to cause the resistance value of tunnel magnetoresistance element, Z can be realized by the change in resistance for measuring tunnel magnetoresistance element
The detection of axle acceleration.
When there is the input of X-axis angular speed, two sensitive-mass blocks in Y-axis are moved out by centrifugal force effect, and two quick
Feeling mass block drives the detection magnet of top two that micro-displacement occurs compared with the tunnel magnetoresistance element above bonding substrate recess,
Relative displacement changes between detection magnet and tunnel magnetoresistance element, magnetic caused by tunnel magnetoresistance element sensitivity to micro-displacement
Field variation, changes of magnetic field cause spinning electron tunnelling probability in tunnel magnetoresistance element to change and tunnel magneto-resistance effect occurs, so as to
Cause the resistance value of tunnel magnetoresistance element that acute variation occurs, X-axis angle can be realized by the change in resistance for measuring tunnel magnetoresistance element
The detection of rate.
When there is the input of Y-axis angular speed, two sensitive-mass blocks in X-axis are moved out by centrifugal force effect, and two quick
Feeling mass block drives the detection magnet of top two that micro-displacement occurs compared with the tunnel magnetoresistance element above bonding substrate recess,
Relative displacement changes between detection magnet and tunnel magnetoresistance element, magnetic caused by tunnel magnetoresistance element sensitivity to micro-displacement
Field variation, changes of magnetic field cause spinning electron tunnelling probability in tunnel magnetoresistance element to change and tunnel magneto-resistance effect occurs, so as to
Cause the resistance value of tunnel magnetoresistance element that acute variation occurs, Y-axis angle can be realized by the change in resistance for measuring tunnel magnetoresistance element
The detection of rate.
When there is the input of Z axis angular speed, totally four sensitive-mass blocks in X-axis and Y-axis are moved out by centrifugal force effect,
Sensitive-mass block drives detection magnet that micro-displacement, detection magnetic occurs compared with the tunnel magnetoresistance element above bonding substrate recess
Relative displacement changes between body and tunnel magnetoresistance element, and magnetic field caused by tunnel magnetoresistance element sensitivity to micro-displacement becomes
To change, changes of magnetic field causes spinning electron tunnelling probability in tunnel magnetoresistance element to change and tunnel magneto-resistance effect occurs, so as to cause
Acute variation occurs for the resistance value of tunnel magnetoresistance element, and Z axis angular speed can be realized by the change in resistance for measuring tunnel magnetoresistance element
Detection.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example describe
Structure, material or feature are contained at least one embodiment or example of the utility model.In the present specification, to above-mentioned art
The schematic representation of language may not refer to the same embodiment or example.Moreover, description specific features, structure, material or
Person's feature can in an appropriate manner combine in any one or more embodiments or example.
While there has been shown and described that the embodiment of the utility model, it will be understood by those skilled in the art that
In the case where not departing from the principle and objective of the utility model can these embodiments be carried out with a variety of variations, modification, replaced
And modification, the scope of the utility model are limited by claim and its equivalent.
Claims (10)
- A kind of 1. micro- inertia component of tunnel magnetoresistive detection, which is characterized in that micro- inertia component application tunnel magneto-resistance effect Carrying out angular speed and acceleration detection, micro- inertia component includes：As the bonding substrate of carrier, it is described bonding substrate be hollow frame structure, bonding substrate inner circumferential side at and in Between position be fixedly installed tunnel magnetoresistance element；With being bonded the fixed braced frame of substrate, sensitivity is connected with by cantilever beam structure in the centre position of the braced frame Mass block, the position directly above that tunnel magnetoresistance element is corresponded at the braced frame inner rim is provided with detection combination beam, described Detection combination beam includes detection beam, link block；The detection beam is the elongated beam structure of at least one layer of bending fold, and passes through the link block and connect the support frame Frame detects the displacement of micro- inertia component inertia force and centrifugal force, the sensitivity of increase detection displacement.
- 2. micro- inertia component of a kind of tunnel magnetoresistive detection according to claim 1, which is characterized in that the braced frame is Hollow square frame, the inner rim middle of the square frame are provided with detection magnet and sensitive-mass block；Described detection beam one end connects braced frame by the link block, and the other end connects the sensitive-mass block.
- 3. a kind of micro- inertia component of tunnel magnetoresistive detection according to claim 2, which is characterized in that positioned at the support frame The sensitive-mass block of frame middle is fixedly connected respectively by four cantilever beams with the inner rim of braced frame；The one side of the sensitive-mass block sets the detection magnet；The detection magnet is correspondingly arranged with the tunnel magnetoresistance element, and can interact position.
- 4. a kind of micro- inertia component of tunnel magnetoresistive detection according to claim 1, which is characterized in that the link block is used for Connect braced frame and detection beam；The length of the beam of the detection beam is much larger than its width, for connecting sensitive-mass block and link block.
- A kind of 5. micro- inertia component of tunnel magnetoresistive detection according to claim 3, which is characterized in that the detection combination beam Including the first detection combination beam, the second detection combination beam, the 3rd detection combination beam, the 4th detection combination beam, the 5th detection combination Beam, the 6th detection combination beam, the 7th detection combination beam, the 8th detection combination beam；The sensitive-mass block includes the first sensitive-mass block, the second sensitive-mass block, the 3rd sensitive-mass block, the 4th sensitive matter Gauge block, the 5th sensitive-mass block；The first sensitive-mass block both sides connect the first detection combination beam, the second detection combination beam respectively, and described second Sensitive-mass block both sides connect the 3rd detection combination beam, the 4th detection combination beam, the 3rd sensitive-mass block two respectively Side connects the 5th detection combination beam, the 6th detection combination beam respectively, and the 4th sensitive-mass block both sides connect the 7th inspection respectively Survey combination beam, the 8th detection combination beam；The 5th sensitive-mass block is located at the centre position of the braced frame, and passes through cantilever beam and tunnel magnetoresistive member Part is correspondingly arranged.
- 6. a kind of micro- inertia component of tunnel magnetoresistive detection according to claim 5, which is characterized in that the cantilever beam includes First cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam, the 5th sensitive-mass block pass through described respectively One cantilever beam, the second cantilever beam, the 3rd cantilever beam, the 4th cantilever beam and the surrounding vertical connection of the braced frame.
- A kind of 7. micro- inertia component of tunnel magnetoresistive detection according to claim 1, which is characterized in that the tunnel magnetoresistive member Part includes the first tunnel magnetoresistance element, the second tunnel magnetoresistance element, the 3rd tunnel magnetoresistance element, the 4th tunnel magnetoresistance element, the Five tunnel magnetoresistance elements；The bonding substrate overall structure is square, and intermediate processed through technique is etched with a square groove, is symmetrically set on groove The first tunnel magnetoresistance element, the second tunnel magnetoresistance element, the 3rd tunnel magnetoresistance element, the 4th tunnel magnetoresistance element are put, and in institute The middle position for stating bonding substrate sets the 5th tunnel magnetoresistance element.
- 8. a kind of micro- inertia component of tunnel magnetoresistive detection according to claim 7, which is characterized in that in the first tunnel magnetoresistive Element, the second tunnel magnetoresistance element, the 3rd tunnel magnetoresistance element, the 4th tunnel magnetoresistance element, on the 5th tunnel magnetoresistance element First signal wire, secondary signal line are set.
- 9. a kind of micro- inertia component of tunnel magnetoresistive detection according to claim 5, which is characterized in that sensitive described first Mass block, the second sensitive-mass block, the 3rd sensitive-mass block, the 4th sensitive-mass block, the 5th sensitive-mass block one side difference It is provided with the first detection magnet, the second detection magnet, the 3rd detection magnet, the 4th detection magnet, the 5th detection magnet.
- A kind of 10. micro- inertia component of tunnel magnetoresistive detection according to claim 3, which is characterized in that the detection magnet Including but not limited to permanent magnet, hot-wire coil, light-operated magnet；For the detection magnet using ferromagnetic thin film, the detection magnet is fixed on sensitive-mass block one side, and with the tunnel Magnetoresistive element correspondence is set every sky；The tunnel magnetoresistance element be nanometer multilayer membrane structure, the nanometer multilayer membrane structure on semiconductive material substrate layer from Arrangement is top electrode layer, free magnetic layer, insulating layer, pinned magnetic layer, bottom electrode layer successively under above.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356249A (en) * | 2017-08-15 | 2017-11-17 | 中北大学 | A kind of micro- inertia component of tunnel magnetoresistive detection |
| CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
-
2017
- 2017-08-15 CN CN201721017176.3U patent/CN207395752U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356249A (en) * | 2017-08-15 | 2017-11-17 | 中北大学 | A kind of micro- inertia component of tunnel magnetoresistive detection |
| CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
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