CN107894576B - Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution - Google Patents
Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution Download PDFInfo
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Abstract
The invention discloses an integrated low-power-consumption triaxial magnetic field sensor with high Z-direction resolution, which comprises an insulating substrate, track-changing soft magnetic blocks and four magnetic measurement units, wherein the four magnetic measurement units are arranged on the surface of the insulating substrate in a centrosymmetric manner, the track-changing soft magnetic blocks are symmetrically arranged on the four magnetic measurement units by taking the central points of the four magnetic measurement units as centers, and one part of each magnetic measurement unit is positioned right below the track-changing soft magnetic block. Aiming at the problems of insufficient Z-direction resolution, low compensation efficiency and the like in the existing scheme, the invention realizes high-efficiency track change of a Z-direction magnetic field by adopting the track change soft magnetic block and four centrosymmetric magnetic measurement units, can realize aggregation amplification and planarization measurement of a three-axis magnetic field, effectively improves the three-axis orthogonality and the resolution of the Z-direction magnetic field, can realize high-resolution measurement of weak three-axis magnetic field signals and high-efficiency compensation of magnetic hysteresis, and has the advantages of low energy consumption and low cost.
Description
Technical field
The present invention relates to faint magnetic signal Detection Techniques, and in particular to a kind of integrated low-power consumption three of high Z-direction resolving power
Axis magnetic field sensor.
Background technique
Magnetic sensor can directly acquire the three-component information in magnetic field, be widely used in target acquisition, earth-magnetism navigation,
The military affairs such as geological prospecting, biomedicine and national economy field.Meanwhile with Weak magentic-field detection, carrying platform miniaturization etc.
It is required that continuous improvement, magnetic sensor technologies show the development trends such as high resolution, small size, low-power consumption.
With the development of MEMS (MEMS) technology, existed using the integrated magnetic sensor that MEMS technology manufactures
Volume, weight, power consumption and reliability etc. have shown big advantage, while also can effectively solve traditional three axis of assembly type
The poor problem of Magnetic Sensor orthogonality, but there is also certain deficiencies for existing MEMS triaxial magnetic field sensor, especially in Z
Non-linear inhibition of high-resolution survey and magnetic hysteresis to magnetic field etc..
Magnetic sensor be integrated in maximum difficult point be the high-resolution survey in Z-direction magnetic field.Based on Hall
Although the magnetic sensor of magnetic susceptibility unit and Lorentz force resonance can guarantee orthogonality well, resolving power is generally not
It is high；High-resolution survey demand, but MR sensing unit may be implemented using MR sensing units such as giant magnetoresistance, tunnel magnetoresistives (TMR)
It is usually only capable of the magnetic field of X or Y-direction in sensitive plane, and it is insensitive for the magnetic field of Z-direction.Under normal circumstances, integration three
Axis magnetic field sensor has preferably orthogonality than assembly type triaxial magnetic field sensor, and can also be real using micro-processing technology
The miniaturization of existing MR sensor；But MR sensing unit only to magnetic-field-sensitive planar, to the magnetic in vertical plane direction
Field is insensitive.Solving this problem, there are mainly two types of thinkings:
1, magnetic susceptibility unit style is standby on substrate inclined-plane, such as: 1, pit or boss on substrate are etched, MR is quick
Unit style is felt on prism, obtains Z-direction after carrying out integrated treatment using output signal of the circuit unit to each sensing unit
Magnetic field (american documentation literature that number of patent application is US20120068698)；2, in the first surface of monocrystal silicon substrate respectively to different
Property etch the second face, the angle (54.74 °) that is determined by silicon crystalline structure is formed between the second face and first surface, then
MR sensing unit is prepared on the second surface, because MR sensing unit and base plane are in a certain angle, can measure Z-direction magnetic field.So
And above scheme is because of reasons such as oblique incidences in preparation process, the MR sensing unit performance on inclined-plane is poor, surveys to Z-direction magnetic field
Amount makes a big impact.
2, become after the Z-direction magnetic field of vertical plane is diverted in plane by rail structure with the magnetic line of force again with high resolution MR magnetosensitive
Sense unit measures, and is expected to realize the high orthogonal and high resolution of three axis simultaneously.In terms of based on above-mentioned thinking measurement Z-direction magnetic field
Also there are many schemes to propose at present.Such as: 1, discrete soft magnetism collector in MR sensing unit two sides is prepared, the Z-direction magnetic line of force is few
It is measured (american documentation literature of Patent No. US7505233B2) in the torsion guidance to plane of part, but the Z of the program
It is very low that efficiency is turned to magnetic field, generally only a few percent；2, the magnetic variation rail collector in MR sensing unit two sides is located at one
In pit, rail is become (in Publication No. CN103116143A by the pit and magnetic collector on pit inclined-plane realization Z-direction magnetic field
State's patent document)；3, the substrate for being loaded with MR sensing unit is placed on the pedestal equipped with a pit, soft magnetism is placed in pit
Block (Chinese patent literature of Publication No. CN103323795A), relatively before scheme, the program effectively increases Z-direction magnetic field
Resolving power, but due to the finite thickness of soft magnetism block in pit, and soft magnetism block is farther out from MR sensing unit plane, limits Z-direction magnetic
Field resolving power further increases.
Aiming at the problem that hysteresis restricts magnetic field sensor precision and improves, some units are reducing magnetic hysteresis non-linear effects
Aspect has carried out correlative study.The magnetic texure of Portuguese system engineering and copmputing laboratory by design MTJ free layer, drop
The low magnetic hysteresis of MTJ magnetic responsiveness curve, effectively increases the performance of Magnetic Sensor, but accurately control the nanometer of MTJ free layer
Constructive difficulty is larger, and effect is limited；Angstrom erlang root-Nuremburge university of Germany builds according to the mathematical model of hysteresis loop
It has stood and has significantly reduced the non-linear effects of magnetic hysteresis for reducing magnetic hysteresis nonlinear algorithm, but its calculated result can allow magnetic field
Measured value generates certain error；National University of Defense technology's (Chinese patent literature of Publication No. CN103323794A) is directly from magnetic
The raw Physical Mechanism of bradytoia is set out, and the plane micro coil for field compensation is devised, which is preparation completely in substrate table
The loop coil in face has the advantages that structure is simple, it is convenient to prepare, and effectively reduces magnetic field sensor magnetic hysteresis, but the program
Planar coil construction it is loose, the compensation efficiency of outer coil reduces very fast, and that there are compensation efficiencies is lower, takes up too much space etc. asks
Topic.
Summary of the invention
The technical problem to be solved in the present invention: it is asked for Z-direction lack of resolution, compensation efficiency existing for existing scheme are low etc.
Topic provides a kind of using the high efficiency change rail for becoming rail soft magnetism block and four centrosymmetric magnetic measurement units realization Z-direction magnetic fields, energy
The aggregation amplification and planarization measurement for enough realizing three-axle magnetic field, effectively increase the resolving power in three axis intercepts and Z-direction magnetic field,
It can be realized that faint three-axle magnetic field signal high-resolution survey, magnetic hysteresis effectively compensating, low energy consumption, low-cost high Z-direction is differentiated
The integrated low-power consumption triaxial magnetic field sensor of power.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power, including dielectric base, become rail soft magnetism block and
Four magnetic measurement units, four magnetic measurement units, which are centrosymmetric, is arranged in the surface of dielectric base, the change rail soft magnetism
Block is symmetrically disposed on four magnetic measurement units centered on the central point of four magnetic measurement units, each magnetic measurement unit
A part is located at the underface for becoming rail soft magnetism block.
Preferably, the magnetic measurement unit includes magnetic line of force collector, bucking coil and magnetic susceptibility unit, the magnetic line of force
Collector is the cyclic structure that middle part is equipped with axis, and the axis is equipped with gap, and the bucking coil is wound around on axis
Gap two sides, the magnetic susceptibility unit are by two sensitive magneto-resistors and two Wheatstone bridges formed with reference to magneto-resistor, institute
Two sensitive magneto-resistors are stated to be arranged in the gap of dielectric base, it is described two to be located at below magnetic line of force collector with reference to magneto-resistor
Magnetic field shielding region in, two driving electrodes of the bucking coil, two driving electrodes of magnetic susceptibility unit and output
Electrode is arranged in dielectric base.
Preferably, the gap and axis are arranged in 45° angle, and the direction phase in the gap in all magnetic measurement units
Together.
Preferably, the magnetic line of force collector is made up on a dielectric base of the growth of high magnetic conductivity film, or is insulating
It is made up in substrate of plating or sputtering.
Preferably, the width at the both ends of the axis gradually becomes smaller to middle part.
Preferably, the bucking coil includes upper coil and inner coil, and the upper coil is located at the upper table of axis
Face, the inner coil are located at the lower surface of axis, upper coil and inner coil be collectively formed toroid cyclic structure and around
System is at the both ends of axis.
Preferably, the upper coil and inner coil are made by the way of plating film forming.
Preferably, the sensitive magneto-resistor and reference magneto-resistor are tunnel magneto resistance sensor TMR.
Preferably, the change rail soft magnetism block is fixed on magnetic line of force collector, bucking coil in such a way that epoxy glue is bonded
In the planar structure of composition.
Preferably, the dielectric base is the intrinsic silicon that surface deposits a layer insulating by gas-phase chemical reaction.
The integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power of the invention has an advantage that
1, the present invention includes that dielectric base, change rail soft magnetism block and four magnetic measurement units, four magnetic measurement units are in
It is centrosymmetrically arranged in the surface of dielectric base, the change rail soft magnetism block is symmetrical centered on the central point of four magnetic measurement units
It is placed on four magnetic measurement units, a part of each magnetic measurement unit is located at the underface for becoming rail soft magnetism block, using change
Rail soft magnetism block and four magnetic measurement units realize that the high efficiency in Z-direction magnetic field becomes rail, realize the aggregation amplification peace of three-axle magnetic field
Faceization measurement, can effectively improve the resolving power in three axis intercepts and Z-direction magnetic field.
2, structure of the invention can be used MEMS technology preparation, have it is small in size, realize simple advantage.
Detailed description of the invention
Fig. 1 is the schematic view of the front view of the embodiment of the present invention.
Fig. 2 is the A-A schematic cross-sectional view of Fig. 1.
Fig. 3 is the magnetic susceptibility cellular construction schematic diagram of the embodiment of the present invention.
Fig. 4 is the magnetic measurement cellular construction schematic diagram of the embodiment of the present invention.
Marginal data: 1, dielectric base；2, become rail soft magnetism block；3, magnetic measurement unit；31, magnetic line of force collector；311, in
Axis；312, gap；32, bucking coil；321, upper coil；322, inner coil；33, magnetic susceptibility unit；331, sensitive magnetoelectricity
Resistance；332, with reference to magneto-resistor.
Specific embodiment
As shown in Figure 1, the integrated low-power consumption triaxial magnetic field sensor of the high Z-direction resolving power of the present embodiment includes insulation base
Bottom 1 becomes rail soft magnetism block 2 and four magnetic measurement units 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4), four magnetic measurement units
Be centrosymmetric is arranged in the surface of dielectric base 1 to 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4), become rail soft magnetism block 2 with
It is symmetrically disposed at centered on the central point of four magnetic measurement units 3 on four magnetic measurement units 3, each magnetic measurement unit 3
A part is located at the underface for becoming rail soft magnetism block 2.The integrated low-power consumption triaxial magnetic field sensor of the present embodiment is soft using rail is become
Magnetic patch 2 and four magnetic measurement units 3 realize that the high efficiency in Z-direction magnetic field becomes rail, realize the aggregation amplification and plane of three-axle magnetic field
Change measurement, the resolving power in three axis intercepts and Z-direction magnetic field can be effectively improved.
In the present embodiment, dielectric base 1 is the intrinsic silicon that surface deposits a layer insulating by gas-phase chemical reaction.
As shown in Fig. 2, becoming rail soft magnetism block 2 as block structure made of high magnetic conduction soft magnetic materials, becomes rail soft magnetism block 2 and pass through ring
Oxygen glue bonding mode be fixed on magnetic line of force collector 31, bucking coil 32 constitute planar structure on.Based on this structure, make
The parameters such as the height of rail soft magnetism block 2 must be become can not (can be from original number by the constraint of thick film preparative capacibility in MEMS technology
Ten microns are promoted to several millimeters), be conducive to the change rail efficiency for promoting Z-direction magnetic field, and then can overcome and lead because becoming rail efficiency deficiency
The disadvantage for causing Z-direction magnetic field resolving power low.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, magnetic measurement unit 3 includes magnetic line of force collector 31, bucking coil 32 and magnetosensitive
Feel unit 33, magnetic line of force collector 31 is the cyclic structure that middle part is equipped with axis 311, and axis 311 is equipped with gap 312, compensation
Coil 32 is wound around 312 two sides of gap on axis 311, and magnetic susceptibility unit 33 is by two sensitive magneto-resistors 331 and two ginsengs
The Wheatstone bridge of the composition of magneto-resistor 332 is examined, two sensitive magneto-resistors 331 are arranged in the gap 312 of dielectric base 1, and two
Being located at 31 lower section of magnetic line of force collector with reference to magneto-resistor 332, (in the magnetic field shielding region that present position is, magnetic field cannot by shielding
Sensitive magnetic field), two driving electrodes (for compensating electric current for the access of bucking coil 32) of bucking coil 32, magnetic susceptibility unit 33
Two driving electrodes (for for magnetic susceptibility unit 33 power) and output electrode (for exporting the detection of magnetic susceptibility unit 33
Signal) it is arranged in dielectric base 1.Magnetic measurement unit 3 has an advantage that 1. bucking coil 32 is wound around magnetic line of force aggregation
On the axis 311 of device 31, penalty coefficient is big, compensates electric current and small power consumption；2. bucking coil 32 is wound around the gap on axis 311
312 two sides, so that 312 two sides of gap of magnetic line of force collector 31 form secondary side, secondary side can make the magnetic field shape of bucking coil 32
At circuit, the penalty coefficient of bucking coil 32 is improved, reduces the power consumption of bucking coil 32.
Referring to Fig. 3, four magnetic measurement units 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4) include four magnetic susceptibilities altogether
Unit 33 (magnetic susceptibility unit 33#1~magnetic susceptibility unit 33#4), each magnetic susceptibility unit 33 are by two sensitive magneto-resistors
331 and two with reference to magneto-resistor 332 form Wheatstone bridges.Sensitive magneto-resistor 331 is non-conterminous two in Wheatstone bridge
A magneto-resistor is located in gap, can sensitive magnetic field, resistance value becomes R0+△R.It is Wheatstone bridge with reference to magneto-resistor 332
In in addition non-conterminous two magneto-resistors, be located at magnetic line of force collector below, the insensitive magnetic of shielding by magnetic line of force collector
, resistance value R0It does not change；In the present embodiment, two sensitive magneto-resistors 331 and two reference magneto-resistors 332 are formed
The Wheatstone bridge of semibridge system.In supply voltage VcUnder the action of, shown in the output such as formula (1) of single magnetic susceptibility unit 33:
In formula (1), VoIndicate the output of single magnetic susceptibility unit 33, R0For the resistance value with reference to magneto-resistor 332, R0+△R
For the resistance value of sensitive magneto-resistor 331, △ R is the resistance difference (inductive reactance) of sensitive magneto-resistor 331 and reference magneto-resistor 332,
VcFor the supply voltage for inputting magnetic susceptibility unit 33.
Referring to Fig. 1, Fig. 3 and Fig. 4, each magnetic measurement unit 3 includes six electrodes altogether: two drivings of bucking coil 32
Electrode (for be the access compensation of bucking coil 32 electric current), two driving electrodes of magnetic susceptibility unit 33 (are used to be magnetic susceptibility list
Member 33 is powered) and output electrode (for exporting the detection signal of magnetic susceptibility unit 33), four magnetic measurement units 3 are altogether comprising two
14 electrodes.Wherein magnetic susceptibility unit 33#1~magnetic susceptibility unit 33#4 electrode is as follows: two of magnetic susceptibility unit 33#1
Driving electrodes are VcAnd two output electrodes of GND, magnetic susceptibility unit 33#1 are V11And V12, two drives of magnetic susceptibility unit 33#2
Moving electrode is VcAnd two output electrodes of GND, magnetic susceptibility unit 33#1 are V21And V22, two drivings of magnetic susceptibility unit 33#3
Electrode is VcAnd two output electrodes of GND, magnetic susceptibility unit 33#1 are V31And V32, two drivings electricity of magnetic susceptibility unit 33#4
Extremely VcAnd two output electrodes of GND, magnetic susceptibility unit 33#1 are V41And V42, unquestionably, magnetic susceptibility unit 33#1~magnetic
The driving electrodes of sensing unit 33#4 both can be independently-powered, also can according to need parallel powering, principle and the present embodiment
It is identical, therefore details are not described herein.
As shown in Figure 1 and Figure 4, gap 312 and axis 311 are arranged in 45° angle, and the gap in all magnetic measurement units 3
312 direction is identical.312 direction of gap on four magnetic line of force collectors 31 is same direction, can make all magnetic susceptibilities
The sensitive direction of the sensitive magneto-resistor 331 of unit 33 is same direction (perpendicular to the longitudinal direction in gap 312), is avoided same
The difficulty that the sensitive magneto-resistor 331 of different sensitive directions is prepared in one dielectric base 1 significantly reduces sensitive magneto-resistor 331
Difficulty is prepared, while eliminating influencing each other between different sensitive direction sensitivity magneto-resistors 331.
In the present embodiment, magnetic line of force collector 31 is grown in dielectric base 1 by high magnetic conductivity film and is made, and furthermore may be used
To be made up in dielectric base 1 of plating or sputtering as needed.It is prepared using MEMS technology, there is small in size, realization letter
Single advantage.In the present embodiment, four magnetic lines of force of four magnetic measurement units 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4)
Collector 31 (magnetic line of force collector 31#1~magnetic line of force collector 31#4) structure is the same, and there is gap 312 in centre, by high magnetic conductance
Rate soft magnetic materials (such as NiFe, CoZrNb) is made, and is centrosymmetric distribution with the planar central of dielectric base 1.
As shown in Figure 1 and Figure 4, the width at the both ends of axis 311 gradually becomes smaller to middle part, can effectively enhance magnetic line of force aggregation
The magnetic line of force congregational rate of device 31, improves the resolving power of magnetic field sensor.In the present embodiment, the both ends two sides of axis 311 are all provided with
There is symmetrical wedge structure, so that the width at the both ends of axis 311 gradually becomes smaller to middle part, realized by symmetrical wedge structure,
Both ends are thick, intermediate small structure enhances magnetic line of force congregational rate, improve the resolving power of magnetic field sensor.
As shown in Fig. 2, bucking coil 32 includes upper coil 321 and inner coil 322, upper coil 321 is located at axis
311 upper surface, inner coil 322 are located at the lower surface of axis 311, and ring is collectively formed in upper coil 321 and inner coil 322
Shape coil structure and the both ends for being wound on axis 311.Bucking coil 32 is directly wound on the axis 311 of magnetic line of force collector 31
On, the compensation magnetic field generated at gap 312 is larger, and required compensation electric current is relatively small, to reduce power consumption.Compensating line
Circle 32 generates corresponding magnetic field and the magnetic field at gap 312 is made to be in relatively steady state, can reduce magnetic hysteresis, non-linear factor
Influence.
In the present embodiment, upper coil 321 and inner coil 322 are made by the way of plating film forming, and film forming is electroplated
Thickness is larger, and coil side step coverage is good, and coil resistance is small, low in energy consumption.But upper coil 321 and inner coil 322
Preparation method be not limited to plating mode.
In the present embodiment, sensitive magneto-resistor 331 and reference magneto-resistor 332 are tunnel magneto resistance sensor TMR.
In the present embodiment, become rail soft magnetism block 2 and four magnetic measurement units 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4)
The basic structure of triaxial magnetic field sensor is together constituted, the measurement of three-axle magnetic field and decoupling principle are as follows:
The magnetic field that four magnetic measurement units 3 (magnetic measurement unit 3#1~magnetic measurement unit 3#4) measure is respectively such as formula (2) institute
Show:
In formula (2), B1~B4The magnetic field that respectively magnetic measurement unit 3#1~magnetic measurement unit 3#4 is measured, G are poly- for the magnetic line of force
The magnetic field amplification factor of storage, Bext-x,Bext-y,Bext-zThree components in respectively tested magnetic field；K is to become rail coefficient, by change rail
Soft magnetism block 2 and four magnetic measurement units 3 codetermine, expression be Z-direction magnetic field turn to be flat magnetic field efficiency.
Decoupling can be obtained shown in the calculation formula such as formula (3) in three-component magnetic field:
In formula (3), Bext-x,Bext-y,Bext-zThree components in respectively tested magnetic field, B1~B4Respectively magnetic measurement unit
The magnetic field that 3#1~magnetic measurement unit 3#4 is measured, G are the magnetic field amplification factor of magnetic line of force collector；K is to become rail coefficient, by change rail
Soft magnetism block 2 and four magnetic measurement units 3 codetermine, expression be Z-direction magnetic field turn to be flat magnetic field efficiency.Therefore, it adopts
Become rail with the high efficiency that change rail soft magnetism block 2 and four magnetic measurement units 3 can be realized Z-direction magnetic field, realizes the poly- of three-axle magnetic field
Collection amplification and planarization measurement, can effectively improve the resolving power in three axis intercepts and Z-direction magnetic field.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
Those of ordinary skill for, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power, it is characterised in that: including dielectric base (1),
Become rail soft magnetism block (2) and four magnetic measurement units (3), four magnetic measurement units (3), which are centrosymmetric, is arranged in insulation base
The surface at bottom (1), the change rail soft magnetism block (2) are symmetrically disposed at four centered on the central point of four magnetic measurement units (3)
On magnetic measurement unit (3), a part of each magnetic measurement unit (3) is located at the underface for becoming rail soft magnetism block (2)；The magnetic survey
Measuring unit (3) includes magnetic line of force collector (31), bucking coil (32) and magnetic susceptibility unit (33), the magnetic line of force collector
(31) cyclic structure of axis (311) is equipped with for middle part, the axis (311) is equipped with gap (312), the bucking coil
(32) gap (312) two sides of axis (311) are wound around, the magnetic susceptibility unit (33) is by two sensitive magneto-resistors (331)
With two Wheatstone bridges with reference to magneto-resistor (332) composition, described two sensitivity magneto-resistors (331) are arranged in dielectric base
(1) described two to be located at the magnetic field shielding area below magnetic line of force collector (31) with reference to magneto-resistor (332) in gap (312)
In domain, two driving electrodes of the bucking coil (32), two driving electrodes of magnetic susceptibility unit (33) and output electrode
It is arranged on dielectric base (1).
2. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 1, it is characterised in that:
The gap (312) and axis (311) are arranged in 45° angle, and the direction side in the gap (312) in all magnetic measurement units (3)
To identical.
3. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 1, it is characterised in that:
The magnetic line of force collector (31) is grown on dielectric base (1) by high magnetic conductivity film and is made, or on dielectric base (1)
It is made by being electroplated or sputtering.
4. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 1, it is characterised in that:
The width at the both ends of the axis (311) gradually becomes smaller to middle part.
5. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 1, it is characterised in that:
The bucking coil (32) includes upper coil (321) and inner coil (322), and the upper coil (321) is located at axis
(311) upper surface, the inner coil (322) are located at the lower surface of axis (311), upper coil (321) and inner coil
(322) toroid cyclic structure is collectively formed and is wound on the both ends of axis (311).
6. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 5, it is characterised in that:
The upper coil (321) and inner coil (322) are made by the way of plating film forming.
7. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 2, it is characterised in that:
The sensitivity magneto-resistor (331) and reference magneto-resistor (332) are tunnel magneto resistance sensor TMR.
8. the integrated low-power consumption triaxial magnetic field sensor of high Z-direction resolving power according to claim 1, it is characterised in that:
The change rail soft magnetism block (2) is fixed on magnetic line of force collector (31) in such a way that epoxy glue is bonded, bucking coil (32) is constituted
Planar structure on.
9. the integrated low-power consumption three-axle magnetic field of high Z-direction resolving power described according to claim 1~any one of 8 senses
Device, it is characterised in that: the dielectric base (1) is the intrinsic silicon that surface deposits a layer insulating by gas-phase chemical reaction.
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| CN108919147B (en) * | 2018-06-22 | 2021-02-09 | 钱正洪 | Three-axis magnetic field sensor |
| CN110286340B (en) * | 2019-06-13 | 2021-04-09 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
| CN110286338B (en) * | 2019-06-13 | 2021-04-02 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN110345938B (en) * | 2019-06-25 | 2021-08-31 | 潍坊歌尔微电子有限公司 | Wafer-level magnetic sensor and electronic equipment |
| JP7522129B2 (en) * | 2019-11-22 | 2024-07-24 | Tdk株式会社 | Magnetic Sensors |
| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN114114102B (en) * | 2021-11-18 | 2024-01-23 | 中国人民解放军国防科技大学 | Integrated planarization triaxial magnetic sensor and application method thereof |
| CN116997244B (en) * | 2023-08-01 | 2024-05-31 | 北京航空航天大学青岛研究院 | Magnetic flux collector, manufacturing method thereof and magnetic sensing chip |
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