CN103472410B - A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type - Google Patents

A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type Download PDF

Info

Publication number
CN103472410B
CN103472410B CN201310455985.2A CN201310455985A CN103472410B CN 103472410 B CN103472410 B CN 103472410B CN 201310455985 A CN201310455985 A CN 201310455985A CN 103472410 B CN103472410 B CN 103472410B
Authority
CN
China
Prior art keywords
electric capacity
hole
pad
rocks
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310455985.2A
Other languages
Chinese (zh)
Other versions
CN103472410A (en
Inventor
陈洁
梁秋实
周志浩
薛铭豪
景晟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southeast University
Original Assignee
Southeast University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southeast University filed Critical Southeast University
Priority to CN201310455985.2A priority Critical patent/CN103472410B/en
Publication of CN103472410A publication Critical patent/CN103472410A/en
Application granted granted Critical
Publication of CN103472410B publication Critical patent/CN103472410B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses a kind of two micro electronmechanical magnetic field sensor of torsional pendulum type, comprise the substrate, bottom electrode layer, sacrifice layer, metal level and the silicon nitride layer that superpose setting from bottom to top successively, the end face of silicon nitride layer is provided with anchor district, anchor district is while be provided with the second pad, the 4th pad and two the 5th pads, and anchor district another side is provided with the first pad, the 3rd pad, the tenth pad and two the 6th pads; The middle part of silicon nitride layer is provided with first and rocks beam, and first rocks beam is fixedly connected with anchor district by two the first brace summers; First inner side of rocking beam is provided with second and rocks beam; First rock beam edge and second rock beam edge be laid with the first driving metal wire and second drive metal wire; First bottom surface of rocking beam is provided with the first electric capacity and the second electric capacity; Second bottom surface of rocking beam is provided with the 3rd electric capacity and the 4th electric capacity.This magnetic field sensor can measure magnetic field amplitude and angle, and this magnetic field sensor structure is simple.

Description

A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type
Technical field
The invention belongs to sensor technical field, specifically, relate to a kind of two micro electronmechanical magnetic field sensor of torsional pendulum type.
Background technology
Magnetic field sensor has long history, and the invention of compass is to Modern Traffic navigation, and magnetic field sensor is more and more paid attention to by people.
Magnetic field sensor and our life closely bound up, all there is magnetic field or the information relevant to magnetic field with many places of human society life in nature.The magnetic field utilizing the artificial permanent magnet arranged to produce, can be used as the carrier of much information perhaps.Therefore, detect, gather, store, change, reappear and monitor in various magnetic field and magnetic field the task of the various information carried, naturally just drop on it magnetic field sensor.Develop the Magnetic Sensor utilizing various physics, chemistry and biological effect, and be used widely in the various aspects of scientific research, production and social life, bear the task of probing into all information.
Along with the development of MEMS (micro electro mechanical system) (MEMS) technology, greatly promote the development of MEMS magnetic field sensor, there is the structure of some Miniature magnetic field sensors, the MEMS technology of simultaneously new development can utilize the English full name of IC(to be on a silicon substrate: integrated circuit, Chinese is: integrated circuit) aftertreatment technology makes various physical construction, design for magnetic field sensor opens new approach, in recent years, propose the structure of some Miniature magnetic field sensors, as the Vincent Beroulle of France, the MEMS magnetic field sensor that Laurent Latorre proposes, pressure drag is done near semi-girder and anchor district, by measuring the output detections magnetic field of pressure drag.Torsional pendulum type MEMS magnetic field sensor is proposed by people such as Beverley Eyre the earliest, measures the amplitude that structure is rocked after magnetic fields lower stress, measures the size in magnetic field.These magnetic field sensors can only measure the size in magnetic field.Magnetic field is a vector, so very important to magnetic direction information.
Summary of the invention
technical matters:technical matters to be solved by this invention is: provide a kind of two micro electronmechanical magnetic field sensor of torsional pendulum type, this magnetic field sensor can measure magnetic field amplitude and angle, and this magnetic field sensor structure is simple.
technical scheme:for solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, this magnetic field sensor comprises the substrate, bottom electrode layer, sacrifice layer, metal level and the silicon nitride layer that superpose setting from bottom to top successively, sacrifice layer, metal level and silicon nitride layer are hollow structure, the end face of silicon nitride layer is provided with anchor district, anchor district is while be provided with the second pad, the 4th pad and two the 5th pads, and anchor district another side is provided with the first pad, the 3rd pad, the tenth pad and two the 6th pads; The middle part of silicon nitride layer is provided with first and rocks beam, and first rocks beam is fixedly connected with anchor district by two the first brace summers, and first rocks beam and the first brace summer is in vacant state; First inner side of rocking beam is provided with second and rocks beam, and second rocks beam is fixedly connected with the first inwall rocking beam by two the second brace summers, and second rocks beam and the second brace summer is in vacant state; First rock beam edge and second rock beam edge be laid with the first driving metal wire and second drive metal wire; First bottom surface of rocking beam is provided with the first electric capacity and the second electric capacity, and the first end face rocking beam is provided with the first capacitance leading wire and the second capacitance leading wire; Second bottom surface of rocking beam is provided with the 3rd electric capacity and the 4th electric capacity, and second rocks the end face of beam and the first end face rocking beam is provided with the 3rd capacitance leading wire and the 4th capacitance leading wire; First rocks in beam and is provided with the first through hole of containing metal post and the second through hole of containing metal post, and the first electric capacity is connected with one end of the first capacitance leading wire by the first through hole, and the other end of the first capacitance leading wire is connected with the first pad; Second electric capacity is connected with one end of the second capacitance leading wire by the second through hole, and the other end of the second capacitance leading wire is connected with the second pad; Second fourth hole rocking in beam third through-hole and the containing metal post being provided with containing metal post, the 3rd electric capacity is connected by third through-hole one end with the 3rd capacitance leading wire, and the 3rd capacitance leading wire other end is connected with the 3rd pad; 4th electric capacity is connected with the 4th capacitance leading wire one end by fourth hole, and the 4th capacitance leading wire other end is connected with the 4th pad; First drives the two ends of metal wire to be connected with the 5th pad respectively, first rocks beam is provided with the fifth hole of containing metal post and the 6th through hole of containing metal post, first drives the first intermediate ends of metal wire to be connected with one end of the first connecting line by the metal column of fifth hole, and first drives the second intermediate ends of metal wire to be connected with the first connecting line other end by the metal column of the 6th through hole; Second drives the two ends of metal wire to be connected with the 6th pad respectively, first rocks beam is provided with the 7th through hole of containing metal post and the 8th through hole of containing metal post, second drives the 3rd intermediate ends of metal wire to be connected with one end of the second connecting line by the metal column of the 7th through hole, and second drives the 4th intermediate ends of metal wire to be connected with the other end of the second connecting line by the metal column of the 8th through hole; Be provided with the 9th through hole containing metal column in sacrifice layer, be provided with the tenth through hole of containing metal post in silicon nitride layer, bottom electrode layer is connected with the 7th pad with the tenth through hole by the 9th through hole, metal level.
Further, the first described electric capacity and the second electric capacity are positioned at first and rock on two relative limits of beam, the first electric capacity and the second electric capacity be not all connected to the first brace summer first rock beam same on.
Further, the first described electric capacity and the second electric capacity are positioned at the bottom edge center that first rocks beam, and the first electric capacity and the second electric capacity are on same straight line, and symmetrical.
Further, the 3rd described electric capacity and the 4th electric capacity are positioned at second and rock on two articles of relative limits of beam, the 3rd electric capacity and the 4th electric capacity be not all connected to the second brace summer second rock beam same on.
Further, the 3rd described electric capacity and the 4th electric capacity are positioned at the bottom edge center that second rocks beam, and the 3rd electric capacity and the 4th electric capacity are on same straight line, and symmetrical.
beneficial effect:compared with prior art, the present invention has following beneficial effect:
1. structure is simple, can realize the measurement of magnetic field amplitude and angle.The micro electronmechanical magnetic field sensor of of the present invention pair of torsional pendulum type, utilize two to rock structure and can respond to orthogonal magnetic fields respectively, two magnetic direction motion amplitudes can be realized like this can compare, by magnetic direction being obtained from the first electric capacity, the second electric capacity, the 3rd electric capacity and the 4th capacitance variations relation, the amplitude in magnetic field can be obtained simultaneously.
2. little, the dependable performance of power consumption.The present invention utilizes measurement two to rock the displacement of beam, measures the direction in magnetic field.Electric current used in whole measuring process is direct current, and in addition, the counteracting avoiding interaction force laid by metal wire by the present invention, and under same magnetic field condition, the displacement of the stressed maximum generation of twisted plate is also maximum, and therefore power consumption is little.In addition, capacitance detecting is affected by the external environment less, the sensor of relative thermal drivers, and this magnetic field sensor Lorentz force relatively easily drives, dependable performance.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the a-a sectional view in Fig. 1.
Fig. 3 is the b-b sectional view in Fig. 1.
Fig. 4 is the c-c sectional view in Fig. 1.
Fig. 5 is the d-d sectional view in Fig. 1.
Fig. 6 is the e-e sectional view in Fig. 1.
Fig. 7 is the f-f sectional view in Fig. 1.
Have in figure: first rocks beam 1, first brace summer 2, second rocks beam 3, second brace summer 4, first electric capacity 5, second electric capacity 6, 3rd electric capacity 7, 4th electric capacity 8, first drives metal wire 9, second drives metal wire 10, end electric capacity 11, substrate 12, bottom electrode layer 13, sacrifice layer 14, metal level 15, silicon nitride layer 16, anchor district 17, 3rd intermediate ends 18, 4th intermediate ends 19, first intermediate ends 20, second intermediate ends 21, first connecting line 22, second connecting line 23, first capacitance leading wire 51, second capacitance leading wire 61, 3rd capacitance leading wire 71, 4th capacitance leading wire 81, first pad 52, second pad 62, 3rd pad 72, 4th pad 82, 5th pad 92, 6th pad 102, 7th pad 112, first through hole 53, second through hole 63, third through-hole 73, fourth hole 83, fifth hole 93, 6th through hole 94, 7th through hole 103, 8th through hole 104, 7th pad 112, tenth through hole 113, 9th through hole 114.
Specific embodiments
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in detail.
As shown in Figures 1 to 7, the two micro electronmechanical magnetic field sensor of torsional pendulum type of one of the present invention, comprises the substrate 12, bottom electrode layer 13, sacrifice layer 14, metal level 15 and the silicon nitride layer 16 that superpose setting from bottom to top successively.Sacrifice layer 14, metal level 15 and silicon nitride layer 16 are hollow structure.The end face of silicon nitride layer 16 is provided with anchor district 17.Anchor district 17 is while be provided with the second pad 62, the 4th pad 82 and two the 5th pads 92, and anchor district 17 another side is provided with the first pad 52, the 3rd pad 72, the tenth pad 112 and two the 6th pads 102.The middle part of silicon nitride layer 16 is provided with first and rocks beam 1.First rocks beam 1 is fixedly connected with anchor district 17 by two the first brace summers 2.First rocks beam 1 and the first brace summer 2 is in vacant state.First inner side of rocking beam 1 is provided with second and rocks beam 3, and second rocks beam 3 is fixedly connected with the first inwall rocking beam 1 by two the second brace summers 4.Second rocks beam 3 and the second brace summer 4 is in vacant state.First rocks beam 1 edge and second rocks beam 2 edge and is laid with the first driving metal wire 9 and second and drives metal wire 10.First bottom surface of rocking beam 1 is provided with the first electric capacity 5 and the second electric capacity 6.First end face rocking beam 1 is provided with the first capacitance leading wire 51 and the second capacitance leading wire 61.Second bottom surface of rocking beam 3 is provided with the 3rd electric capacity 7 and the 4th electric capacity 8, the second and rocks the end face of beam 3 and the first end face rocking beam 1 is provided with the 3rd capacitance leading wire 71 and the 4th capacitance leading wire 81.First the second through hole 63, first electric capacity 5 rocking in beam 1 the first through hole 53 and containing metal post being provided with containing metal post is connected with one end of the first capacitance leading wire 51 by the first through hole 53, and the other end of the first capacitance leading wire 51 is connected with the first pad 52.Second electric capacity 6 is connected with one end of the second capacitance leading wire 61 by the second through hole 63, and the other end of the second capacitance leading wire 61 is connected with the second pad 62.Second fourth hole the 83, three electric capacity 7 rocking the third through-hole 73 and containing metal post being provided with containing metal post in beam 3 is connected with one end of the 3rd capacitance leading wire 71 by third through-hole 73, and the 3rd capacitance leading wire 71 other end is connected with the 3rd pad 72.4th electric capacity 8 is connected with the 4th capacitance leading wire 81 one end by fourth hole 83, and the 4th capacitance leading wire 81 other end is connected with the 4th pad 82; First drives the two ends of metal wire 9 to be connected with the 5th pad 92 respectively,
First rocks beam 1 is provided with the fifth hole 93 of containing metal post and the 6th through hole 94 of containing metal post, first drives the first intermediate ends 20 of metal wire 9 to be connected with one end of the first connecting line 22 by the metal column of fifth hole 93, and first drives the second intermediate ends 21 of metal wire 9 to be connected with first connecting line 22 other end by the metal column of the 6th through hole 94.Second drives the two ends of metal wire 10 to be connected with the 6th pad 102 respectively, first rocks beam 1 is provided with the 7th through hole 103 of containing metal post and the 8th through hole 104 of containing metal post, second drives the 3rd intermediate ends 18 of metal wire 10 to be connected with one end of the second connecting line 23 by the metal column of the 7th through hole 103, and second drives the 4th intermediate ends 19 of metal wire 10 to be connected with the other end of the second connecting line 23 by the metal column of the 8th through hole 104.Be provided with the 9th through hole 114 containing metal column in sacrifice layer 14, be provided with the tenth through hole 113 of containing metal post in silicon nitride layer 16, bottom electrode layer 13 is connected with the 7th pad 112 with the tenth through hole 113 by the 9th through hole 114, metal level 15.
Further, the first described electric capacity 5 and the second electric capacity 6 are positioned at first and rock on two relative limits of beam 1, the first electric capacity 5 and the second electric capacity 6 be not all connected to the first brace summer 2 first rock beam 1 same on.Such two capacitance profile, when twisting under transverse magnetic field effect, the position torsional displacement residing for electric capacity is maximum, and the change of such electric capacity is also maximum, improves the sensitivity that transverse magnetic field is measured.
Further, the first described electric capacity 5 and the second electric capacity 6 are positioned at the bottom edge center that first rocks beam 1, and the first electric capacity 5 and the second electric capacity 6 are on same straight line, and symmetrical.Such two electric capacity are symmetrical, and when twisting under transverse magnetic field effect, some same components just can be offset, and leave absolute difference, reduce error.
Further, the 3rd described electric capacity 7 and the 4th electric capacity 8 are positioned at second and rock on two articles of relative limits of beam 3, the 3rd electric capacity 7 and the 4th electric capacity 8 be not all connected to the second brace summer 4 second rock beam 3 same on.Such two capacitance profile, when twisting under longitudinal magnetic field effect, the position torsional displacement residing for electric capacity is maximum, and the change of such electric capacity is also maximum, improves the sensitivity of longitudinally measuring herein.
Further, the 3rd described electric capacity 7 and the 4th electric capacity 8 are positioned at the bottom edge center that second rocks beam 3, and the 3rd electric capacity 7 and the 4th electric capacity 8 are on same straight line, and symmetrical.Such two electric capacity are symmetrical, and when twisting under longitudinal magnetic field effect, some same components just can be offset, and leave absolute difference, reduce error.Further, for reducing to drive metal wire to rock first the interphase interaction that beam 1 and second rocks beam 3, described driving metal wire rocks in beam at two and is in position relatively far away as far as possible, the position displacement residing for electric capacity so just can be made large as far as possible, improve sensitivity.
The magnetic field sensor course of work of this structure is: as shown in Figure 1, drive metal wire 9, second to drive in metal wire 10 at first of magnetic field sensor and apply an arbitrary DC current, under magnetic fields, structure can deform, and measures the capacitance variations of the first electric capacity 5, second electric capacity 6, the 3rd electric capacity 7 and the 4th electric capacity 8.First electric capacity 5 and the second electric capacity 6 are positioned at the bottom edge center that first rocks beam 1, and the first electric capacity 5 and the second electric capacity 6 are on same straight line, and symmetrical.At transverse magnetic field B h(B hcross stream component for magnetic field) effect under, first drives metal wire 9 and second to drive the effect that in metal wire 10, (supposing that electric current is clockwise direction) will be magnetic field force induced, first electric capacity 5 will be bent downwardly in the first position of rocking residing for beam 1, electric capacity diminishes, second electric capacity 6 will be bent upwards in the first position of rocking residing for beam 1, and electric capacity becomes large.Rock beam 3 outer side center because the 3rd electric capacity 7 and the 4th electric capacity 8 are in second, electric capacity can not change.The absolute value that can obtain the first electric capacity 5 and the change of the second electric capacity 6 is like this equal, can obtain amount of bow, and then can rock the coefficient of torsion of beam 1 according to first, obtain first and rock the stressed of beam 1 thus obtain transverse magnetic field B by capacitance variations hvalue.Further, by the capacitance change of the first electric capacity 5 and the second electric capacity 6, the direction of transverse magnetic field can be obtained.
Equally, the 3rd electric capacity 7 and the 4th electric capacity 8 are positioned at the bottom edge center that second rocks beam 3, and the 3rd electric capacity 7 and the 4th electric capacity 8 are on same straight line, and symmetrical.At longitudinal magnetic field B v(B vcross stream component for magnetic field) effect under, first drives metal wire 9 and second to drive the effect that in metal wire 10, (supposing that electric current is clockwise direction) will be magnetic field force induced, 4th electric capacity 8 will be bent downwardly in the second position of rocking residing for beam 3, electric capacity diminishes, 3rd electric capacity 7 will be bent upwards in the second position of rocking residing for beam 3, and electric capacity becomes large.The absolute value that can obtain the 3rd electric capacity 7 and the change of the 4th electric capacity 8 is like this equal, and capacitance variations can obtain amount of bow, and then can rock the coefficient of torsion of beam 3 according to second, obtains second and rocks the stressed of beam 3 thus obtain longitudinal magnetic field B vvalue.Further, by the capacitance change of the 3rd electric capacity 7 and the 4th electric capacity 8, the direction of longitudinal magnetic field can be obtained.Magnetic direction and size can be obtained like this.

Claims (5)

1. two micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, this magnetic field sensor comprises the substrate (12) superposing setting from bottom to top successively, bottom electrode layer (13), sacrifice layer (14), metal level (15) and silicon nitride layer (16), sacrifice layer (14), metal level (15) and silicon nitride layer (16) are hollow structure, the end face of silicon nitride layer (16) is provided with anchor district (17), anchor district (17) is while be provided with the second pad (62), 4th pad (82) and two the 5th pads (92), anchor district (17) another side is provided with the first pad (52), 3rd pad (72), 7th pad (112) and two the 6th pads (102), the middle part of silicon nitride layer (16) is provided with first and rocks beam (1), first rocks beam (1) is fixedly connected with anchor district (17) by two the first brace summers (2), and first rocks beam (1) and the first brace summer (2) is in vacant state, first inner side of rocking beam (1) is provided with second and rocks beam (3), second rocks beam (3) is fixedly connected with the first inwall rocking beam (1) by two the second brace summers (4), and second rocks beam (3) and the second brace summer (4) is in vacant state, first rock beam (1) edge and second rock beam (2) edge be laid with the first driving metal wire (9) and second drive metal wire (10), first bottom surface of rocking beam (1) is provided with the first electric capacity (5) and the second electric capacity (6), and the first end face rocking beam (1) is provided with the first capacitance leading wire (51) and the second capacitance leading wire (61), second bottom surface of rocking beam (3) is provided with the 3rd electric capacity (7) and the 4th electric capacity (8), and the end face that the second end face and first rocking beam (3) rocks beam (1) is provided with the 3rd capacitance leading wire (71) and the 4th capacitance leading wire (81), first rocks and is provided with first through hole (53) of containing metal post and second through hole (63) of containing metal post in beam (1), first electric capacity (5) is connected by the first through hole (53) one end with the first capacitance leading wire (51), and the other end of the first capacitance leading wire (51) is connected with the first pad (52), second electric capacity (6) is connected by the second through hole (63) one end with the second capacitance leading wire (61), and the other end of the second capacitance leading wire (61) is connected with the second pad (62), second rocks and is provided with the third through-hole (73) of containing metal post and the fourth hole (83) of containing metal post in beam (3), 3rd electric capacity (7) is connected by third through-hole (73) one end with the 3rd capacitance leading wire (71), and the 3rd capacitance leading wire (71) other end is connected with the 3rd pad (72), 4th electric capacity (8) is connected with the 4th capacitance leading wire (81) one end by fourth hole (83), and the 4th capacitance leading wire (81) other end is connected with the 4th pad (82), first drives the two ends of metal wire (9) to be connected with the 5th pad (92) respectively, first rocks beam (1) is provided with the fifth hole (93) of containing metal post and the 6th through hole (94) of containing metal post, first drives first intermediate ends (20) of metal wire (9) to be connected with one end of the first connecting line (22) by the metal column of fifth hole (93), and first drives second intermediate ends (21) of metal wire (9) to be connected with the first connecting line (22) other end by the metal column of the 6th through hole (94), second drives the two ends of metal wire (10) to be connected with the 6th pad (102) respectively, first rocks beam (1) is provided with the 7th through hole (103) of containing metal post and the 8th through hole (104) of containing metal post, second drives the 3rd intermediate ends (18) of metal wire (10) to be connected with one end of the second connecting line (23) by the metal column of the 7th through hole (103), second drives the 4th intermediate ends (19) of metal wire (10) to be connected with the other end of the second connecting line (23) by the metal column of the 8th through hole (104), the 9th through hole (114) containing metal column is provided with in sacrifice layer (14), be provided with the tenth through hole (113) of containing metal post in silicon nitride layer (16), bottom electrode layer (13) is connected with the 7th pad (112) with the tenth through hole (113) by the 9th through hole (114), metal level (15).
2. according to the according to claim 1 pair of micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, described the first electric capacity (5) and the second electric capacity (6) are positioned at first and rock on two relative limits of beam (1), the first electric capacity (5) and the second electric capacity (6) be not all connected to the first brace summer (2) first rock beam (1) same on.
3. according to the according to claim 2 pair of micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, described the first electric capacity (5) and the second electric capacity (6) are positioned at the bottom edge center that first rocks beam (1), first electric capacity (5) and the second electric capacity (6) are on same straight line, and symmetrical.
4. according to the according to claim 1 pair of micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, the 3rd described electric capacity (7) and the 4th electric capacity (8) are positioned at second and rock on two articles of relative limits of beam (3), the 3rd electric capacity (7) and the 4th electric capacity (8) be not all connected to the second brace summer (4) second rock beam (3) same on.
5. according to the according to claim 4 pair of micro electronmechanical magnetic field sensor of torsional pendulum type, it is characterized in that, the 3rd described electric capacity (7) and the 4th electric capacity (8) are positioned at the bottom edge center that second rocks beam (3), 3rd electric capacity (7) and the 4th electric capacity (8) are on same straight line, and symmetrical.
CN201310455985.2A 2013-09-30 2013-09-30 A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type Expired - Fee Related CN103472410B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310455985.2A CN103472410B (en) 2013-09-30 2013-09-30 A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310455985.2A CN103472410B (en) 2013-09-30 2013-09-30 A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type

Publications (2)

Publication Number Publication Date
CN103472410A CN103472410A (en) 2013-12-25
CN103472410B true CN103472410B (en) 2015-09-23

Family

ID=49797331

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310455985.2A Expired - Fee Related CN103472410B (en) 2013-09-30 2013-09-30 A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type

Country Status (1)

Country Link
CN (1) CN103472410B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107329099A (en) * 2017-06-22 2017-11-07 东南大学 One kind rocks parallel-moving type microcomputer emf sensor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105129719B (en) * 2015-07-06 2017-02-01 中国科学院半导体研究所 Bidirectionally tandem MEMS actuator based on Lorentz force
CN107192967B (en) * 2017-06-02 2019-04-30 合肥工业大学 A kind of plane torsion for high magnetic measuring declines sensor
CN107356889B (en) * 2017-06-22 2019-08-20 东南大学 A kind of interdigital microcomputer emf sensor of torsional pendulum type
CN107370757B (en) * 2017-08-28 2020-09-11 苏州乐菲昂科技有限公司 Internet of things system based on ANT protocol, angle measuring method and device
CN111487567B (en) * 2020-05-14 2022-09-23 上海科技大学 Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101475139A (en) * 2009-01-19 2009-07-08 清华大学 MEMS horizontal resonant vibration type magnetometer
CN101515026A (en) * 2009-03-20 2009-08-26 东南大学 Resonance micro electromechanical system magnetic field sensor and measuring method thereof
JP4801881B2 (en) * 2004-01-16 2011-10-26 光照 木村 Resonance type magnetic sensor and magnetic field detection device using the same
CN102680917A (en) * 2012-04-28 2012-09-19 中国科学院上海微系统与信息技术研究所 Micro-mechanical magnetic field sensor and preparation method thereof
CN102759720A (en) * 2012-07-10 2012-10-31 东南大学 Magnetic sensor easy to encapsulate
CN102914749A (en) * 2012-11-19 2013-02-06 中国科学院上海微系统与信息技术研究所 Micromechanical magnetic field sensor and application thereof
CN103105592A (en) * 2013-01-29 2013-05-15 中国科学院上海微系统与信息技术研究所 Single-chip three-shaft magnetic field sensor and production method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664786B2 (en) * 2001-07-30 2003-12-16 Rockwell Automation Technologies, Inc. Magnetic field sensor using microelectromechanical system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4801881B2 (en) * 2004-01-16 2011-10-26 光照 木村 Resonance type magnetic sensor and magnetic field detection device using the same
CN101475139A (en) * 2009-01-19 2009-07-08 清华大学 MEMS horizontal resonant vibration type magnetometer
CN101515026A (en) * 2009-03-20 2009-08-26 东南大学 Resonance micro electromechanical system magnetic field sensor and measuring method thereof
CN102680917A (en) * 2012-04-28 2012-09-19 中国科学院上海微系统与信息技术研究所 Micro-mechanical magnetic field sensor and preparation method thereof
CN102759720A (en) * 2012-07-10 2012-10-31 东南大学 Magnetic sensor easy to encapsulate
CN102914749A (en) * 2012-11-19 2013-02-06 中国科学院上海微系统与信息技术研究所 Micromechanical magnetic field sensor and application thereof
CN103105592A (en) * 2013-01-29 2013-05-15 中国科学院上海微系统与信息技术研究所 Single-chip three-shaft magnetic field sensor and production method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
MEMS磁场传感器的研究进展;陈洁等;《电子器件》;20061231;第29卷(第4期);第1384-1388页 *
Resonant Magnetic Field Sensors Based On MEMS Technology;Agustín L. Herrera-May et al.;《Sensors》;20090930;第7785-7813页 *
Resonant Mechanical Magnetic Sensor in Standard CMOS;Beverley Eyre et al.;《IEEE ELECTRON DEVICE LETTERS》;19981231;第19卷(第12期);第496-498页 *
两种结构MEMS磁场传感器的研究;陈洁;《传感技术学报》;20121231;第25卷(第12期);第1648-1652页 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107329099A (en) * 2017-06-22 2017-11-07 东南大学 One kind rocks parallel-moving type microcomputer emf sensor
CN107329099B (en) * 2017-06-22 2019-08-20 东南大学 One kind rocking parallel-moving type microcomputer emf sensor

Also Published As

Publication number Publication date
CN103472410A (en) 2013-12-25

Similar Documents

Publication Publication Date Title
CN103472410B (en) A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type
CN103499796B (en) A kind of micro electronmechanical magnetic field sensor of comb structure
CN101059557B (en) Micro-electro-mechanical system magnetic field sensor and magnetic field measurement method
CN102156201B (en) Three-axis capacitive micro accelerometer based on silicon on insulator (SOI) process and micropackage technology
CN102759720B (en) Magnetic sensor easy to encapsulate
CN102981131B (en) Low-noise micro plane fluxgate sensor based on main and auxiliary coil double incentive
CN101320081A (en) Micro electro-mechanical system magnetic field sensor and measuring method
CN101515026A (en) Resonance micro electromechanical system magnetic field sensor and measuring method thereof
CN102914750B (en) Micromechanical magnetic field sensor and application thereof
CN103792267B (en) A kind of differential capacitance type humidity sensor
CN101475139A (en) MEMS horizontal resonant vibration type magnetometer
CN101482441B (en) Dual-spindle surface shearing stress sensor
CN100409014C (en) Heat driven minisize electric field sensor
CN103472412B (en) A kind of capacitive microcomputer electromagnetic field sensor
CN105301344A (en) Quartz resonant DC voltage sensor chip based on driving beam arrays
CN111077343A (en) Tunnel magnetoresistance MEMS accelerometer structure based on magnetic film and control method
CN201620874U (en) Nine-parameter logging instrument
EP2998757B1 (en) Magnetic field sensor
CN107356889B (en) A kind of interdigital microcomputer emf sensor of torsional pendulum type
CN103995151A (en) Composite eight-beam high-frequency-response acceleration sensor chip
CN107329099B (en) One kind rocking parallel-moving type microcomputer emf sensor
CN104568304A (en) Data acquisition system for enhanced stress type force sensor
CN103472413B (en) A kind of micro electro-mechanical system magnetic field sensor for measuring magnetic direction
CN104697679B (en) A kind of inductance type strain gauge
CN204203262U (en) A kind of passive acceleration sensing chip

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province

Patentee after: Southeast University

Address before: 211103 No. 5 Runfa Road, Jiangning District, Nanjing City, Jiangsu Province

Patentee before: Southeast University

CP02 Change in the address of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150923

Termination date: 20190930

CF01 Termination of patent right due to non-payment of annual fee