CN112363097A - Magneto-resistance sensor chip - Google Patents
Magneto-resistance sensor chip Download PDFInfo
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- CN112363097A CN112363097A CN202011205282.0A CN202011205282A CN112363097A CN 112363097 A CN112363097 A CN 112363097A CN 202011205282 A CN202011205282 A CN 202011205282A CN 112363097 A CN112363097 A CN 112363097A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
- G01R33/0082—Compensation, e.g. compensating for temperature changes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
Abstract
A magnetoresistive sensor chip comprising: the first sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on a pair of opposite bridge arms are shielded by a soft magnetic layer; the second sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on one pair of opposite bridge arms are shielded by the soft magnetic layer, and the magnetic resistors on the other pair of opposite bridge arms are in a bias magnetic field; and the data processing unit divides the output of the first sensing unit and the output of the second sensing unit and outputs a final sensing signal. According to the invention, two sensing units are arranged, one sensing unit outputs signals related to temperature and a magnetic field, the other sensing unit outputs signals only related to temperature, and division processing is carried out on the two output signals, so that the interference of the external temperature to the sensor chip is eliminated, the temperature drift of the sensor chip is reduced, and the sensor chip has higher accuracy and sensitivity.
Description
Technical Field
The invention belongs to the technical field of sensor chips, and particularly relates to a magneto-resistance sensor chip.
Background
The Tunneling Magnetoresistance (TMR) is a magnetic tunnel junction of a sandwich structure of ferromagnetic layer/insulating layer/ferromagnetic layer, and when the magnetization directions of the upper and lower ferromagnetic layers are parallel or antiparallel, the tunneling magnetoresistance exhibits different resistance values and exhibits a very strong magnetoresistance effect at room temperature. The magneto-resistance sensor chip manufactured based on the effect can accurately sense the change of a magnetic field and convert the change into a voltage signal to be output externally, and has the characteristics of small volume, low cost, low power consumption, high integration level, high response frequency, high sensitivity and the like. At present, the tunnel magneto-resistance material is widely applied to a magnetic disk reading magnetic head and a nonvolatile random access memory, and a related magnetic sensor also shows good application prospect in various industries.
At normal temperature, the tunneling magneto-resistance sensor chip has very good linearity and extremely high sensitivity, but in a low-temperature or high-temperature environment, along with the change of temperature, the resistance value can generate a temperature drift phenomenon, and the temperature drift phenomenon can cause the sensitivity and the linearity of the sensor chip to be reduced, so that the measurement range and the measurement precision of the sensor are influenced. In order to solve the temperature drift problem of the magneto-resistance sensor, a commonly used method at present is to use a thermistor to collect the ambient temperature and perform temperature compensation on the output of a sensor chip. However, due to the limitation of the thermistor, the thermistor sensor chip can only have high sensitivity within the temperature range of 0-50 ℃, and once the temperature exceeds the temperature range, the sensor chip still has a relatively obvious temperature drift phenomenon.
In order to solve the temperature drift problem of the sensor, another solution has been proposed, a two-dimensional magnetic field sensor disclosed in chinese utility model patent No. 2018209705482 is provided with a magnetic flux guide on a substrate, the magnetic flux guide is divided into two or four regions, each region is provided with a pair of magnetoresistors, the magnetoresistors in two regions at opposite angles form a wheatstone bridge, one of the two sets of wheatstone bridges is shielded by a soft magnetic material, and the other set can induce the magnetic field, thereby obtaining the output of two differential signals, and suppressing the temperature drift. However, if only one set of wheatstone bridges is magnetically shielded, the differential output signals of the wheatstone bridges are actually very small due to the fact that the four resistors on the bridge arms are almost the same, and the capability of reflecting temperature changes is extremely limited.
Disclosure of Invention
The invention aims to provide a low-temperature-drift magneto-resistance sensor chip.
In order to achieve the purpose, the invention adopts the following technical solutions:
a magnetoresistive sensor chip comprising: the first sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on a pair of opposite bridge arms are shielded by a soft magnetic layer; the second sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on one pair of opposite bridge arms are shielded by the soft magnetic layer, and the magnetic resistors on the other pair of opposite bridge arms are in a bias magnetic field; and the data processing unit divides the output of the first sensing unit and the output of the second sensing unit and outputs a final sensing signal.
As a specific embodiment of the magnetoresistive sensor chip of the invention, the bias magnetic field is formed by permanent magnets disposed on both sides of the magnetoresistive sensor chip.
As a specific embodiment of the magnetoresistive sensor chip of the present invention, the permanent magnet is SmCo or NdFeB.
As a specific implementation mode of the magnetoresistive sensor chip, the magnetic field intensity of the permanent magnet is 100-200 Oe.
As a specific embodiment of the magnetoresistive sensor chip of the present invention, the soft magnetic layer is a permalloy layer.
As a specific embodiment of the magnetoresistive sensor chip of the invention, the magnetoresistance of the first sensing unit is the same as the magnetoresistance of the second sensing unit, and the first sensing unit and the second sensing unit are formed on the same wafer at one time by adopting a magnetron sputtering film forming process.
As a specific embodiment of the magnetoresistive sensor chip according to the invention, the first sensing unit and the second sensing unit further include an output terminal for outputting a signal to the outside and a power supply terminal connected to an external power supply.
As a specific embodiment of the magnetoresistive sensor chip according to the present invention, the data processing unit includes a first logarithmic circuit, a second logarithmic circuit, a subtraction circuit, and an exponential circuit, the first logarithmic circuit is connected to an output terminal of the first sensing unit, the second logarithmic circuit is connected to an output terminal of the second sensing unit, the subtraction circuit receives and processes outputs from the first logarithmic circuit and the second logarithmic circuit, and outputs a processing result to the exponential circuit, and the exponential circuit processes an output of the subtraction circuit and outputs a final sensing signal.
As a specific embodiment of the magnetoresistive sensor chip of the present invention, the magnetoresistance is a TMR cell or a GMR cell.
As a specific embodiment of the magnetoresistive sensor chip of the present invention, the magnetoresistive sensor chip is a magnetoresistive cell, or a plurality of magnetoresistive cells are connected in series.
According to the technical scheme, two sensing units are arranged, one sensing unit adopts a Wheatstone bridge formed by a magnetic resistor and a magnetic resistor shielded by a soft magnetic shielding layer to output signals related to temperature and a magnetic field, the other sensing unit adopts a Wheatstone bridge formed by a magnetic resistor biased by a permanent magnet and a magnetic resistor shielded by a soft magnetic shielding layer to output signals only related to temperature, and then division processing is carried out on the two output signals to achieve the purpose of eliminating the interference of the external temperature on a sensor chip; the Wheatstone bridges in the two induction units are different in structure, the magnetic shielding structure and the bias and magnetic shielding structure are respectively adopted, and the resistance value of the Wheatstone bridge structure in the bias field does not change along with the change of an external magnetic field, so that a larger differential output signal can be obtained, a more ideal temperature change condition can be obtained, the purpose of reducing the temperature drift of the sensor chip is realized, the sensor chip has higher accuracy and sensitivity, and the sensor chip can be used in a wider temperature range.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
FIG. 1 is a block diagram of an embodiment of the present invention;
FIG. 2 is a schematic circuit diagram of a first sensing unit according to an embodiment of the invention;
FIG. 3 is a circuit diagram of a second sensing unit according to an embodiment of the present invention;
FIG. 4 is a block diagram of a data processing unit according to an embodiment of the present invention;
FIG. 5 is a diagram showing the relationship between the magnetoresistance and the external magnetic field.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the magnetoresistive sensor chip of this embodiment includes a first sensing unit 1, a second sensing unit 2 and a data processing unit 3, and the first sensing unit 1, the second sensing unit 2 and the data processing unit 3 of this embodiment are all bare chip units. The first induction unit 1 is used for collecting magnetic field information related to temperature and then outputting a voltage signal V to the data processing unit 3MThe second sensing unit 2 is used for collecting temperature information and then outputting a voltage signal V to the data processing unit 3BThe data processing unit 3 processes the signals from the first sensing unit 1 and the second sensing unit 2 and outputs the processed signals to the outside, and the data processing unit 3 of this embodiment includes a division circuit for dividing the voltage signal V output by the first sensing unit 1MAnd a voltage signal V output by the second sensing unit 2BDivides and outputs the final induction signal V0。
As shown in the figure2, the first sensing unit 1 includes four magnetoresistors: the magnetic resistance sensor comprises a first magnetic resistance 1-1, a second magnetic resistance 1-2, a third magnetic resistance 1-3 and a fourth magnetic resistance 1-4, wherein the four magnetic resistances are connected into a Wheatstone bridge, and in the Wheatstone bridge, the magnetic resistances on a pair of opposite bridge arms are shielded by a soft magnetic layer, so that a magnetic field cannot be induced, and only temperature can be induced; the magneto-resistance of the other pair of opposite arms can normally induce a magnetic field related to temperature, thereby forming a shielded Wheatstone bridge. In this embodiment, the second magnetoresistance 1-2 and the fourth magnetoresistance 1-4 are shielded by the soft magnetic layer, and do not respond to an external magnetic field, so that the external magnetic field cannot be sensed, and the first magnetoresistance 1-1 and the third magnetoresistance 1-3 are normal magnetoresistance and have linear response to the external magnetic field. The soft magnetic layer can be made of permalloy and other soft magnetic materials, and the soft magnetic materials can be prepared by magnetron sputtering and other modes, wherein the soft magnetic materials can be formed by combining iron, cobalt, nickel and other soft magnetic metal materials according to different proportions. An output terminal is respectively arranged between the first magnetic resistor 1-1 and the second magnetic resistor 1-2 and between the third magnetic resistor 1-3 and the fourth magnetic resistor 1-4: a first output terminal A and a second output terminal B for outputting a voltage signal V related to the magnetic fieldM. A power supply terminal is respectively arranged between the second magnetic resistor 1-2 and the third magnetic resistor 1-3 and between the first magnetic resistor 1-1 and the fourth magnetic resistor 1-4: the first induction unit 1 is provided with a first power supply terminal C and a second power supply terminal D, and an external power supply provides voltage drop for the first induction unit 1 through the power supply terminals, so that the first induction unit 1 is in a working state. The output terminal and the power supply terminal of the embodiment are connected with the magneto resistor through the lead wires. The magnetoresistance of the present invention may be a TRM cell or a GMR cell, preferably a TMR cell, and the magnetoresistance may be a single magnetoresistive cell (a TMR cell or a GMR cell), or may be formed by connecting a plurality of magnetoresistive cells (a plurality of TMR cells or a plurality of GMR cells) in series.
The second induction unit 2 is provided with a permanent magnet on the basis of the first induction unit 1, and provides a bias magnetic field for a part of the magnetic resistors to perform biasing. As shown in fig. 3, the second sensing cell 2 also comprises four magnetoresistors: fifth magnetism is magnetic resistance 2-1, sixth magnetism is magnetic resistance 2-2, seventh magnetism is magnetic resistance 2-3 and eighth magnetism is magnetic resistance 2-4, and second induction unit 2 still includes two pairs of permanent magnets: relative to each otherThe magneto-resistance device comprises a first permanent magnet 2-5, a second permanent magnet 2-6, a third permanent magnet 2-7 and a fourth permanent magnet 2-8 which are arranged oppositely, wherein the permanent magnets are used for providing a bias magnetic field for magneto-resistance, the permanent magnets are deposited on two sides of the magneto-resistance, and the magneto-resistance is located in the bias magnetic field formed by the permanent magnets after magnetization. The permanent magnet can be made of permanent magnet materials such as SmCo, NdFeB and the like, is prepared by a magnetron sputtering method, and can obtain a magnetic field of 100-200 (Oe) by adjusting the thickness of the permanent magnet. The four magneto resistors are connected into a Wheatstone bridge, and in the Wheatstone bridge of the second sensing unit 2, the magneto resistors on a pair of opposite bridge arms are shielded by the soft magnetic layer, so that a magnetic field cannot be sensed, and only temperature can be sensed; the magneto-resistor on the other pair of opposite bridge arms is biased by the permanent magnet and cannot induce a magnetic field. In the embodiment, the sixth magnetic resistor 2-2 and the eighth magnetic resistor 2-4 are shielded by soft magnetic layers, the first permanent magnet 2-5 and the second permanent magnet 2-6 form a pair of permanent magnet pairs which are arranged oppositely, the two permanent magnets are respectively arranged at two sides of the fifth magnetic resistor 2-1, the fifth magnetic resistor 2-1 is biased by a permanent magnetic material, the third permanent magnet 2-7 and the fourth permanent magnet 2-8 form another pair of permanent magnet pairs which are arranged oppositely, the two permanent magnets are respectively arranged at two sides of the seventh magnetic resistor 2-3, and the seventh magnetic resistor 2-3 is biased by a permanent magnetic material. An output terminal is respectively arranged between the fifth magneto resistor 2-1 and the sixth magneto resistor 2-2 and between the seventh magneto resistor 2-3 and the eighth magneto resistor 2-4: a third output terminal E and a fourth output terminal G for outputting a temperature-dependent voltage signal V to the outsideB. A power supply terminal is respectively arranged between the sixth magnetic resistor 2-2 and the seventh magnetic resistor 2-3 and between the fifth magnetic resistor 2-1 and the eighth magnetic resistor 2-4: a third power supply terminal F and a fourth power supply terminal H, through which an external power supply provides a voltage drop for the second sensing unit 2, so that the second sensing unit 2 is in a working state.
The magnetoresistance structure in the first induction unit 1 is the same as that in the second induction unit 2, only different data are induced by the corresponding magnetoresistance through arranging the soft magnetic layer and the permanent magnet, the magnetoresistance shielded by the soft magnetic material can only sense data related to temperature and cannot sense data related to a magnetic field, the resistance value of the magnetoresistance biased by the permanent magnetic material does not change along with the change of an external magnetic field, and the magnetoresistance not shielded by the soft magnetic material and biased by the permanent magnetic material can sense an external magnetic field. As a preferred embodiment of the invention, the magnetoresistance structures of the first and second sensing units are the same, the formulas are consistent, and the magnetoresistance structure can be formed on the same wafer at one time by adopting a magnetron sputtering film forming process, so that the preparation process is simplified.
As shown in fig. 4, the data processing unit 3 of the present embodiment includes a first logarithmic circuit, a second logarithmic circuit, a subtraction circuit, and an exponential circuit, so that the data processing unit 3 can divide the voltage signals output by the first sensing unit 1 and the second sensing unit. The first logarithmic circuit is connected with the output end of the first induction unit 1, and the voltage signal V output by the first induction unit 1MAfter being processed by the first logarithmic circuit, the first logarithmic circuit outputs a logarithmic signal lnVMThe second logarithmic circuit is connected with the output end of the second induction unit 2, and the voltage signal V output by the second induction unit 2BAfter being processed by the second logarithmic circuit, the other logarithmic signal lnV is outputBThe two paths of logarithmic signals are output to a subtraction circuit which processes the logarithmic signals and outputs a subtraction signal ln (V)M/VB) The subtracted signal is processed by the index circuit to obtain the final induction signal V of the sensor chip0。
The principle of the invention is explained below with reference to fig. 5:
FIG. 5 shows the relationship between the magneto-resistance and the external magnetic field. P represents that the magnetization directions of the layers of the upper and lower ferromagnetic layers in the magneto-resistance part are the same, namely, the parallel state, and AP represents that the magnetization directions of the layers of the upper and lower ferromagnetic layers in the magneto-resistance part are opposite, namely, the anti-parallel state. In the parallel state, the resistance of the magnetoresistance is minimum, and is RPIn the antiparallel state, the resistance of the magnetoresistance is maximum, RAPWhen the magnetization directions of the upper and lower ferromagnetic layers are between 0 DEG and 180 DEG, the magnetoresistance exhibits a typical correspondence with the change in the external magnetic field, as shown in FIG. 5, in the regions [ a, b ]]In the range, the magneto-resistance is linear with the change of the external magnetic field.
In general, the output voltage V of a Wheatstone bridge formed by magneto-resistanceout＝Vinf(T)·g(H)，Where f (T) is a function dependent on temperature, g (H) is a function dependent on an external magnetic field, VinIs the operating voltage provided by the external power supply to the sensor chip.
For the sensor chip of the present invention, the working voltages supplied from the external power source to the first sensing unit 1 and the second sensing unit 2 are the same and are all Vin. And the magnetoresistance of the first sensing unit 1 is the same as the magnetoresistance of the second sensing unit 2, so the temperature effect on the first sensing unit 1 and the second sensing unit 2 is the same. Thus, the output voltage of the first sensing unit 1 can be written as: vM＝Vinf(T)·g1(H) The output voltage of the second sensing unit 2 can be written as: vB＝Vinf(T)·g2(H)。
Within the linear working range of the first induction unit 1, the output voltage VMIn linear relationship with the external magnetic field H, i.e. g1(H) α H, α in the formula is a proportionality coefficient, so that the output voltage of the first sensing unit 1 is: vM＝αHVinf (T). In the second sensing unit 2, since a pair of magneto-resistors (2-2, 2-4) are shielded by the soft magnetic material, the resistance values of the two magneto-resistors are not changed with the change of the external magnetic field and are constant (R in FIG. 5)0) The other pair of magneto resistors (2-1 and 2-3) is biased by the permanent magnet and is in a biased state, and the resistance values of the two magneto resistors do not change along with the change of an external magnetic field in the working magnetic field range of the sensor chip and are also a certain value (R in figure 5)POr RAP) Thus, for the second sensor element 2, its total resistance is a defined variable independent of the external magnetic field variations in the operating magnetic field range of the sensor chip, so that its output signal VBIs also not affected by external magnetic field, then g2(H) Is a constant, denoted by k, the output voltage of the second sensing unit 2 is then VB＝kVinf(T)。
The data processing unit 3 divides the voltage signals output by the first sensing unit 1 and the second sensing unit 2, and the final output signal of the sensor chip is V0＝VM/VBα H/k. As can be seen from the equation, of the sensor chipOutput signal V0Independent of temperature, only dependent on magnetic field H, can eliminate the influence of temperature to magnetism resistance sensor chip.
The sensor chip integrates 3 groups of bare chip units with different functions, namely a first induction unit 1 which is used for linearly inducing an external magnetic field, a second induction unit 2 which cannot induce an external magnetic field, and a data processing unit 3 which can divide the output of the first induction unit 1 and the output of the second induction unit 2. When the magnetoresistance in the two sensing units are formed on the same wafer once through a film forming process, the influence of the temperature on the two sensing units is basically the same, and the influence of the temperature on the sensor chip can be counteracted by processing output signals of the two sensing units through division operation. Compared with the existing sensor chip using the thermistor for temperature compensation, the method saves the production process of integrating the thermistor, more importantly, expands the use temperature range of the sensor chip, enables the sensor chip to work in the temperature range of minus 40 ℃ to 120 ℃, and has higher accuracy of the output measurement result.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A magnetoresistive sensor chip, comprising:
the first sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on a pair of opposite bridge arms are shielded by a soft magnetic layer;
the second sensing unit comprises a Wheatstone bridge consisting of magnetic resistors, wherein the magnetic resistors on one pair of opposite bridge arms are shielded by the soft magnetic layer, and the magnetic resistors on the other pair of opposite bridge arms are in a bias magnetic field;
and the data processing unit divides the output of the first sensing unit and the output of the second sensing unit and outputs a final sensing signal.
2. The magnetoresistive sensor chip of claim 1, wherein: the bias magnetic field is formed by permanent magnets arranged on both sides of the magneto resistor.
3. The magnetoresistive sensor chip of claim 2, wherein: the permanent magnet is SmCo or NdFeB.
4. The magnetoresistive sensor chip of claim 2, wherein: the magnetic field intensity of the permanent magnet is 100-200 Oe.
5. The magnetoresistive sensor chip of claim 1, wherein: the soft magnetic layer is a permalloy layer.
6. The magnetoresistive sensor chip of claim 1, wherein: the magnetoresistance structure of the first sensing unit is the same as that of the second sensing unit, and the first sensing unit and the second sensing unit are formed on the same wafer at one time by adopting a magnetron sputtering film forming process.
7. The magnetoresistive sensor chip of claim 1, wherein: the first sensing unit and the second sensing unit further include an output terminal outputting a signal to the outside and a power supply terminal connected to an external power supply.
8. The magnetoresistive sensor chip of claim 1, wherein: the data processing unit comprises a first logarithmic circuit, a second logarithmic circuit, a subtraction operation circuit and an exponential circuit, the first logarithmic circuit is connected with the output end of the first induction unit, the second logarithmic circuit is connected with the output end of the second induction unit, the subtraction operation circuit receives and processes the output of the first logarithmic circuit and the output of the second logarithmic circuit and outputs the processed result to the exponential circuit, and the exponential circuit processes the output of the subtraction operation circuit and outputs the final induction signal.
9. The magnetoresistive sensor chip of claim 1, wherein: the magnetoresistance is a TMR cell or a GMR cell.
10. The magnetoresistive sensor chip of claim 1, wherein: the magnetoresistance is a magnetoresistance unit, or a plurality of magnetoresistance units are connected in series.
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| WO2022183826A1 (en) * | 2021-03-01 | 2022-09-09 | 歌尔微电子股份有限公司 | Magnetic sensor and manufacturing method therefor, and electronic device |
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