CN104280696A - Three-axis sensor and manufacturing process thereof - Google Patents
Three-axis sensor and manufacturing process thereof Download PDFInfo
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- CN104280696A CN104280696A CN201310278214.0A CN201310278214A CN104280696A CN 104280696 A CN104280696 A CN 104280696A CN 201310278214 A CN201310278214 A CN 201310278214A CN 104280696 A CN104280696 A CN 104280696A
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Abstract
The invention discloses a three-axis sensor and a manufacturing process of the three-axis sensor. The manufacturing process of the three-axis sensor comprises the steps that a dielectric material is deposited on a substrate so that a first dielectric layer can be formed; a groove array is formed in the first dielectric layer; a second dielectric material is deposited on the first dielectric layer with the groove array formed so that a second dielectric layer can be formed; magnetic materials are deposited so that a magnetic material layer can be formed; protection materials are deposited so that a protection material layer can be formed, grooves are filled so as to enable the surface of the protection material layer to form a plane, and subsequent operation is enabled to be converted into a planar process; annealing is carried out in a magnetic field, wherein the annealing atmosphere is nitrogen or inert gas or vacuum; the image of a magnetic sensor is generated, a magnetic material layer of a sensing unit is formed, and magnetic conductive units are formed by the application of the grooves, and namely, the three-axis sensor is formed on single chip; through holes and electrodes are manufactured. According to the three-axis sensor and the manufacturing process of the three-axis sensor, the flow of the process can be optimized, and the performance of the sensor can be improved.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of sensor, particularly relate to a kind of three-axis sensor; Meanwhile, the invention still further relates to the preparation technology of three-axis sensor.
Background technology
Magnetic Sensor is according to its principle, following a few class can be divided into: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel junction magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, inductive coil, superconductive quantum interference magnetometer etc.
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
Below introduce the principle of work of existing Magnetic Sensor.Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic induction density in detection space.This alloy material magnetic field to external world with crystal structure is very sensitive, and the power change in magnetic field can cause AMR self-resistance value to change.
In manufacture, application process, be added on AMR unit by a high-intensity magnetic field and make it magnetize in one direction, set up a main magnetic domain, the axle vertical with main magnetic domain is called as the sensitive axes of this AMR, as shown in Figure 1.In order to make measurement result change in a linear fashion, the plain conductor on AMR material is 45° angle oblique arrangement, and electric current flows through from these wires and AMR material, as shown in Figure 2; The main magnetic domain set up on AMR material by initial high-intensity magnetic field and sense of current have the angle of 45 °.
When there is external magnetic field Ha, on AMR unit, main magnetic domain direction will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, as shown in Figure 3.For AMR material, the change at θ angle can cause the change of AMR self resistance, as shown in Figure 4.
By the measurement changed AMR cell resistance, external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge to detect the change of AMR resistance, as shown in Figure 5.R1/R2/R3/R4 is the AMR resistance that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R.Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function (can with reference to US Patent No. 5247278, US5952825, US6529114, US7126330, US7358722) of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on two circle crystalline substances or chip, link together finally by encapsulation.At present, Dan Yuanjing/chip cannot realize simultaneously the manufacture of three-axis sensor.
But existing three-axis sensor complex structure, manufacturing process is loaded down with trivial details.In view of this, nowadays in the urgent need to designing a kind of new three-axis sensor and preparation technology thereof, to overcome the above-mentioned defect of existing device and technique.
Summary of the invention
Technical matters to be solved by this invention is: provide a kind of three-axis sensor, can promote the performance of sensor, the flow process of optimized fabrication technique.
In addition, the present invention also provides a kind of preparation technology of three-axis sensor, can the flow process of Optimization Technology, and promotes the performance of obtained sensor.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation technology for three-axis sensor, described preparation technology comprises the steps:
Step S1, in substrate deposits dielectric materials, form first medium layer;
Step S2, on first medium layer, form groove array;
Step S4, deposition magnetic material, form flux material layer;
Step S5, deposition protective material, form protects material layer, and groove tamped, and makes protects material layer surface form plane, make subsequent transition become planar technology;
Step S6, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum;
The figure of step S7, generation Magnetic Sensor, forms the flux material layer of sensing unit, forms magnetic conduction unit simultaneously, namely form three-axis sensor on a single chip by the application of groove; The main part of described magnetic conduction unit is arranged in groove, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit; Described sensing unit is arranged near groove, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal;
Step S8, manufacture through hole and electrode.
As a preferred embodiment of the present invention, step S3, the second medium material that deposition is identical or different from described first medium material on the first medium layer of described formation groove array, form second dielectric layer, thickness is less than 100 nanometers;
As a preferred embodiment of the present invention, in described step S7, be provided with gap between the flux material layer of sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
As a preferred embodiment of the present invention, in step S1, the dielectric material that substrate deposits is monox or ethyl orthosilicate TEOS.
As a preferred embodiment of the present invention, in step S2, the width of groove is 100 ~ 1000 nanometers.
As a preferred embodiment of the present invention, in step S3, described second medium material is one or more in monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride, silicon oxynitride.
As a preferred embodiment of the present invention, in step S4, the magnetic material of deposition is AMR material or GMR material or TMR material.
As a preferred embodiment of the present invention, described preparation technology also comprises step S9 after step S8: manufacture more multi-layered flux material layer, layer of dielectric material IMD and metal level.
A kind of three-axis sensor, described three-axis sensor comprises:
Substrate;
First medium layer, is arranged at substrate surface, and first medium layer is provided with groove array;
Second dielectric layer, is arranged on the first medium layer of described formation groove array;
Magnetic conduction unit, its main part is arranged in groove, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit;
Sensing unit, arranges near groove, and has gap between magnetic conduction unit, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal;
Protects material layer, on the flux material layer being arranged at sensing unit and magnetic conduction unit, and fills up groove.
As a preferred embodiment of the present invention, described sensing unit comprises flux material layer and is arranged at the electrode on flux material layer.
As a preferred embodiment of the present invention, be provided with gap between the flux material layer of described sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
Beneficial effect of the present invention is: the three-axis sensor that the present invention proposes and preparation technology thereof, deposits dielectric materials in substrate, then groove is formed by photoetching and etching technics, and then fill magnetic material inside groove, and groove is tamped, the flow process of final optimization pass technique and the performance of sensor.Advantage of the present invention achieves planar technology after being groove to tamp, and simplifies follow-up multiple tracks technological process.And thicken the thickness of the magnetic material of vertical direction from physical significance, the sensitivity of the 3rd axle is got a promotion.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and direction of current.
Fig. 4 is the θ-R family curve schematic diagram of magnetic material.
Fig. 5 is the connection layout of Wheatstone bridge.
Fig. 6 is the schematic diagram in embodiment one after manufacturing technology steps S2 of the present invention.
Fig. 7 is the schematic diagram in embodiment one after manufacturing technology steps S3 of the present invention.
Fig. 8 is the schematic diagram in embodiment one after manufacturing technology steps S5 of the present invention.
Fig. 9 is the schematic diagram in embodiment one after manufacturing technology steps S7 of the present invention.
Figure 10 is the vertical view in embodiment one after manufacturing technology steps S7 of the present invention.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Present invention is disclosed a kind of preparation technology of three-axis sensor, specifically comprise the steps:
[step S1] deposits dielectric materials in substrate, as monox, TEOS, forms first medium layer 10;
[step S2] refers to Fig. 6, first medium layer 10 is formed groove 11 array, size (groove width) can control in 100 nanometers, 200 nanometers, or 300 nanometers, and the size of groove 11 depends on the thickness requirements of the magnetic material of required three-axis sensor.The cross section of groove 11 can be rectangle, circle etc., and minor face is as critical size; Long limit does not limit, and minor face is restricted to and is greater than 1 nanometer.
[step S3] refers to Fig. 7, at the second medium material that the upper sedimentary facies of above-mentioned dielectric material (containing groove) is same or different, as monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride or silicon oxynitride etc., thickness is less than 100 nanometers (for 40 nanometers), forms second dielectric layer 20.
[step S4] refers to Fig. 8, and deposition magnetic material, form flux material layer 30, magnetic material is AMR, or is GMR, or is TMR material.
[step S5] deposits protective material, and groove is tamped, and forms protects material layer 40, makes the surface of protects material layer 40 form plane, makes subsequent transition become planar technology, as shown in Figure 8.
[step S6] anneals in magnetic field, and annealing atmosphere is nitrogen, or is inert gas (as argon gas), or is vacuum.
[step S7] refers to Fig. 9, by semiconductor or similar technique, form the figure of Magnetic Sensor, except forming sensing unit 32(X axle Y-axis sensor at substrate surface) except, by the application of groove, also form magnetic conduction unit 31(Z axle sensor), as shown in Figure 9, namely form the sensor of three axles on a single chip, its vertical view as shown in Figure 10.
The main part of described magnetic conduction unit 31 is arranged in groove 11, in order to collect the magnetic signal of third direction (as Z-direction), and this magnetic signal is exported to sensing unit 32.Described sensing unit 32 is arranged at the surface of described second dielectric layer 20, and arranges near groove, in order to receive the magnetic signal of the third direction that described magnetic conduction unit 31 exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal.
(gap size can between 1 nanometer be to 5 microns gap between sensing unit 32 and magnetic conduction unit 31, as 1 nanometer, 5 nanometers, 1 micron, 5 microns etc.), namely both are not communicated with, its advantage has been good signal to noise ratio (S/N ratio), simultaneously because the existence in gap, electric current in sensing unit 32 can not arrive magnetic conduction unit 31, helpful to the sensitivity of sensor.
[step S8] manufactures through hole and electrode.
[step S9] manufactures more multi-layered IMD and metal level according to the actual needs.
Please again consult Fig. 9, the three-axis sensor that preparation technology of the present invention obtains comprises substrate, first medium layer 10, second dielectric layer 20, magnetic conduction unit 31, sensing unit 32, protects material layer 41,42.
First medium layer 10 is arranged at substrate surface, which is provided with groove 11 array; Second dielectric layer 20 is arranged on the first medium layer 10 of described formation groove array.
The main part of magnetic conduction unit 31 is arranged in groove 11, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit 32.
Described sensing unit 31 comprises flux material layer and is arranged at the electrode on flux material layer; Sensing unit 32 is arranged near groove 11, and (gap size can between 1 nanometer be to 5 microns gap between magnetic conduction unit 31, as 1 nanometer, 5 nanometers, 1 micron, 5 microns etc.), in order to receive the magnetic signal of the third direction that described magnetic conduction unit 31 exports, and measure magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal.
On the flux material layer that protects material layer 41,42 is arranged at sensing unit 32 and magnetic conduction unit 31, and groove 11 is filled up.
In sum, the three-axis sensor that the present invention proposes and preparation technology thereof, deposits dielectric materials in substrate, then groove is formed by photoetching and etching technics, and then fill magnetic material inside groove, and groove is tamped, the flow process of final optimization pass technique and the performance of sensor.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (11)
1. a preparation technology for three-axis sensor, is characterized in that, described preparation technology comprises the steps:
Step S1, in substrate deposits dielectric materials, form first medium layer;
Step S2, on first medium layer, form groove array;
Step S4, deposition magnetic material, form flux material layer;
Step S5, deposition protective material, form protects material layer, and groove tamped, and makes protects material layer surface form plane, make subsequent transition become planar technology;
Step S6, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum;
The figure of step S7, generation Magnetic Sensor, forms the flux material layer of sensing unit, forms magnetic conduction unit simultaneously, namely form three-axis sensor on a single chip by the application of groove; The main part of described magnetic conduction unit is arranged in groove, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit; Described sensing unit is arranged near groove, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal;
Step S8, manufacture through hole and electrode.
2. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
The second medium material that described method also comprises step S3 between step S2 from step S4, deposition is identical or different with described first medium material on the first medium layer of described formation groove array, forms second dielectric layer.
3. the preparation technology of three-axis sensor according to claim 2, is characterized in that:
In step S3, described second medium material is one or more in monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride, silicon oxynitride; The thickness of second dielectric layer is less than 100 nanometers.
4. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
In described step S7, be provided with gap between the flux material layer of sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
5. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
In step S1, the dielectric material that substrate deposits is monox or ethyl orthosilicate TEOS.
6. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
In step S2, the width of groove is 100 ~ 1000 nanometers.
7. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
In step S4, the magnetic material of deposition is AMR material or GMR material or TMR material.
8. the preparation technology of three-axis sensor according to claim 1, is characterized in that:
Described preparation technology also comprises step S9 after step S8: manufacture more multi-layered flux material layer, layer of dielectric material and metal level.
9. a three-axis sensor, is characterized in that, described three-axis sensor comprises:
Substrate;
First medium layer, is arranged at substrate surface, and first medium layer is provided with groove array;
Second dielectric layer, is arranged on the first medium layer of described formation groove array;
Magnetic conduction unit, its main part is arranged in groove, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit;
Sensing unit, arranges near groove, and has gap between magnetic conduction unit, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal;
Protects material layer, on the flux material layer being arranged at sensing unit and magnetic conduction unit, and fills up groove.
10. three-axis sensor according to claim 9, is characterized in that:
Described sensing unit comprises flux material layer and is arranged at the electrode on flux material layer.
11. three-axis sensors according to claim 9, is characterized in that:
Be provided with gap between the flux material layer of described sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
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Citations (6)
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|---|---|---|---|---|
| JPH01231669A (en) * | 1988-03-10 | 1989-09-14 | Seiko Electronic Components Ltd | Piezoelectric actuator |
| JP2002173097A (en) * | 2000-12-05 | 2002-06-18 | Mitsubishi Electric Corp | Disturbance control device for three-axis stabilizing satellite |
| CN202903988U (en) * | 2012-11-16 | 2013-04-24 | 天津市泰华科技有限公司 | Triaxial orthogonal fluxgate sensor |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
| CN103887428A (en) * | 2012-12-21 | 2014-06-25 | 磁感科技香港有限公司 | Manufacturing technology of magnetic sensing device |
-
2013
- 2013-07-03 CN CN201310278214.0A patent/CN104280696A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01231669A (en) * | 1988-03-10 | 1989-09-14 | Seiko Electronic Components Ltd | Piezoelectric actuator |
| JP2002173097A (en) * | 2000-12-05 | 2002-06-18 | Mitsubishi Electric Corp | Disturbance control device for three-axis stabilizing satellite |
| CN202903988U (en) * | 2012-11-16 | 2013-04-24 | 天津市泰华科技有限公司 | Triaxial orthogonal fluxgate sensor |
| CN103887428A (en) * | 2012-12-21 | 2014-06-25 | 磁感科技香港有限公司 | Manufacturing technology of magnetic sensing device |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
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Application publication date: 20150114 |