CN102798387B - The huge piezoresistive effect microthrust test of a kind of SOI base - Google Patents
The huge piezoresistive effect microthrust test of a kind of SOI base Download PDFInfo
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- CN102798387B CN102798387B CN201210329775.4A CN201210329775A CN102798387B CN 102798387 B CN102798387 B CN 102798387B CN 201210329775 A CN201210329775 A CN 201210329775A CN 102798387 B CN102798387 B CN 102798387B
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Abstract
The invention discloses the huge piezoresistive effect microthrust test of a kind of SOI base, primary structure comprises: bonding substrate and microthrust test angular speed sensitive body.Bonding upper surface of base plate centre position is etched with rectangle kerve; Microthrust test angular speed sensitive body is located at bonding upper surface of base plate and is connected with bonding substrate.Microthrust test angular speed sensitive body comprises further: the fixed fingers electrode anode of bonding substrate left and right side upper surface distribution; The comb electrodes negative pole of forward and backward side upper surface distribution; The fixed fingers structure that fixed fingers electrode anode upper surface is arranged; The holder that comb electrodes negative pole upper surface is arranged; Correspondence is located at the sensitive-mass block above kerve, and sensitive-mass block upper surface is evenly distributed with damping hole; Sensitive-mass block is connected with holder by combination beam; The detection beam root of combination beam is provided with silicon nanowires resistance as sensitive mechanism.Adopt overall construction design according to the micromechanical gyro of the embodiment of the present invention, rational in infrastructure, compact, testing circuit is simple, easy to use, good reliability, be applicable to microminiaturized.
Description
Technical field
The present invention relates to micro-inertial navigation Primary Component research field, be specifically related to the micromechanical gyro of the huge piezoresistive effect of a kind of SOI base.
Background technology
At present, the detection mode that micromechanical gyro is conventional is condenser type and pressure resistance type, pressure resistance type realizes based on the piezoresistive effect principle of highly doped silicon, because the resistor-strain coefficient of silicon voltage dependent resistor (VDR) is less, along with diminishing of size sensor, the voltage dependent resistor (VDR) of Traditional dopant technique can not meet the requirement of modern high sensitivity test; The raising of condenser type precision utilizes to increase capacity area, and due to the microminaturization of device, its precision is difficult to because of reducing of effective capacitance area improve.
Micromechanical gyro has come by the conversion of pick-up unit realizable force electricity the measurement of angular velocity, its sensitivity, resolution are very important, because gyroscope is microminiaturized and integrated, the sensitizing range detected reduces thereupon, so make the indexs such as the sensitivity of detection, resolution reach the ultimate limit state of sensitizing range detection, thus limit the further raising of gyroscope accuracy of detection, be difficult to the needs meeting modern military, civilian equipment.
Summary of the invention
The present invention is intended at least to solve one of technical matters existed in prior art.
In view of this, the present invention needs to provide micromechanical gyro, and this micromechanical gyro is SOI(Silicon-On-Insulator, the silicon in dielectric substrate) micromechanical gyro of the huge piezoresistive effect of base, at least can improve the accuracy of detection of micromechanical gyro.
The invention provides a kind of micromechanical gyro, comprising: bonding substrate, described bonding upper surface of base plate etches the kerve that promising sensitive-mass block provides motion; Microthrust test angular speed sensitive body, described microthrust test angular speed sensitive body is located at bonding surface, and firm with bonding substrate bonding, and microthrust test angular speed sensitive body comprises: fixed fingers electrode anode, is located at the upper surface of bonding substrate left and right side; Comb electrodes negative pole, is located at the upper surface of the forward and backward side of bonding substrate; Fixed fingers, is located at fixed fingers electrode anode upper surface; Holder, is located at comb electrodes negative pole upper surface; Sensitive-mass block, is located at above kerve, and surface uniform is distributed with through hole damping hole; Driving comb, is located at the edge of the sensitive-mass block left and right sides, and intersects identical with fixed fingers; Combination beam, for connecting sensitive-mass block and holder; Silicon nanowires resistive layer, is located at the detection beam root of combination beam as sensitive mechanism.
According to the micromechanical gyro of the embodiment of the present invention, adopt overall construction design, structural design compact and reasonable, can make full use of space, can suppress again drive on detect impact, be applicable to device from decoupling zero and microminiaturization.Silicon nanowires resistance is made up of silicon nanowires resistive layer, silicon nanowires resistance positive pole, silicon nanowires resistance negative pole, silicon nanowires resistive layer there are huge piezoresistive effect pressing diagram height about 2 orders of magnitude than traditional silicon piezoresistive pressure sensor, significantly can improve detection sensitivity and the resolution of piezoresistive silicon sensor, be the method for the silica-based pressure resistance type MEMS of a kind of very good raising.Except above feature, the measurement circuit design of this microthrust test angular speed sensitive body is simple, easy to use, good reliability, is applicable to microminiaturized.
According to one embodiment of present invention, described bonding radical slab integral is rectangular configuration, which is provided with rectangular recess and kerve.Upper and lower, the side-to-side movement that can be the sensitive-mass block of microthrust test angular speed sensitive body instrument provide space.
According to one embodiment of present invention, described microthrust test angular speed sensitive body comprises further: fixed fingers electrode anode, described fixed fingers electrode anode is two, be placed in the upper surface of the left and right frame of bonding substrate respectively and bond firmly, and this electrode top establishes fixed fingers, and bonding firmly; Comb electrodes negative pole, described comb electrodes negative pole is the electrode of sensitive-mass block arranged on left and right sides driving comb, this electrode and fixed fingers electrode anode are at same plane, be placed in the forward and backward frame upper surface of bonding substrate, and bonding firmly, and the upper surface of this electrode establishes holder, and bonding firmly; Sensitive-mass block, the described uniform through hole damping hole in sensitive-mass block surface.Sensitive-mass block arranged on left and right sides edge is evenly distributed with driving comb, and sensitive-mass block is connected with holder by combination beam.Combination beam, described combination beam is formed by driving beam, detection beam, contiguous block, and for connection fixing base and sensitive-mass block, the upper surface detecting beam is provided with silicon nanowires resistance.
According to one embodiment of present invention, described fixed fingers electrode is provided with the pedestal of described fixed fingers; Described comb electrodes negative pole is provided with described holder, and holder has former and later two, is placed in two comb electrodes negative pole upper surfaces respectively, and is connected with sensitive-mass block by combination beam; Be connected with the combination beam upper surface at position of holder is provided with silicon nanowires resistance electrode.
According to one embodiment of present invention, described sensitive-mass block is rectangle, and is embedded in the kerve of bonding substrate, and can upper and lower in this kerve, forward and backward, side-to-side movement; The described forward and backward symmetric position of sensitive-mass block is connected with holder respectively by combination beam.
According to one embodiment of present invention, described combination beam is inflection shape, drives beam to be connected by contiguous block with detection beam, and contiguous block two ends are that " several " font drives beam, and contiguous block interposition installs detection beam; Drive the thickness of beam identical with the thickness of sensitive-mass block in combination beam, the thickness detecting beam is less than both sides and drives beam; Detect the root upper surface of beam near holder one end and be provided with silicon nanowires resistance.
According to one embodiment of present invention, described fixed fingers and the driving comb of described sensitive-mass block both sides of the edge intersect identical.
According to one embodiment of present invention, the corner symmetric position of described sensitive-mass block is processed with combination beam space, and combination beam is embedded in combination beam space respectively, and combination beam can top to bottom, left and right, front and rear motion in combination beam space.
According to one embodiment of present invention, the layer-of-substrate silicon of described detection beam is manufactured with silicon dioxide layer, silicon dioxide layer is manufactured with the silicon nanowires resistive layer of folding shape, the two ends of silicon nanowires resistive layer are connected to silicon nanowires resistance positive pole, silicon nanowires resistance negative pole.
According to one embodiment of present invention, described silicon nanowires resistive layer adopts SOI material to make.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the one-piece construction stereographic map of the embodiment of the present invention;
Fig. 2 is the one-piece construction planimetric map of the embodiment of the present invention;
Fig. 3 is the microthrust test angular speed sensitive body three-dimensional structure diagram of the embodiment of the present invention;
Fig. 4 is the sensitive-mass block plane structure chart of the embodiment of the present invention;
Fig. 5 is the bonding substrate three-dimensional structure diagram of the embodiment of the present invention;
Fig. 6 is the silicon nanowires resistance junction composition of the embodiment of the present invention;
Fig. 7 is the combination beam three-dimensional structure diagram of the embodiment of the present invention;
Fig. 8 is the combination beam three-view diagram of the embodiment of the present invention;
Fig. 9 is the fixed fingers structural drawing of the embodiment of the present invention;
Shown in figure, list of numerals is as follows:
1, sensitive-mass block, 2, damping hole, 3, holder, 4, fixed fingers pedestal, 5, fixed fingers, 6, silicon nanowires resistance, 7, silicon nanowires resistance positive pole, 8, silicon nanowires resistance negative pole, 9, driving comb, 10, combination beam space, 11, drive beam, 12, detect beam, 13, contiguous block, 14, comb, 15, comb groove, 16, comb electrodes negative pole, 17, fixed fingers electrode anode, 18, layer-of-substrate silicon, 19, silicon dioxide layer, 20, silicon nanowires resistive layer, 21, bonding substrate, 22, kerve, 23, microthrust test angular speed sensitive body, 24, combination beam
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, it will be appreciated that, term " on ", the orientation of the instruction such as D score, "front", "rear", "left", "right" or position relationship be based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " is connected ", " connection " should be interpreted broadly, such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
Silicon nanowires resistance is a kind of novel silicon piezoresistance type resistance, the resistor-strain coefficient of its huge piezoresistive effect characterized up to 5000, than resistor-strain coefficient (about 100) height about 2 orders of magnitude of silicon pressure drag of conventional bulk processing.The succession to traditional pressure sensitive resistance-type micromechanical gyro and breakthrough by the research that this novel silicon nanowires resistance is applied to micromechanical gyro.
Below in conjunction with accompanying drawing, the present invention is described further:
As shown in Figure 1-2, micromechanical gyro according to an embodiment of the invention, comprising: bonding substrate 21 and microthrust test angular speed sensitive body 23 two large divisions;
Specifically, can with bonding substrate 21 for carrier, such as bonding substrate 21 can be made up of semiconductor material, and bonding substrate 21 upper surface center is provided with thinking that sensitive-mass block provides the kerve 22 of space.
Microthrust test angular speed sensitive body 23 can be located at the upper surface of bonding substrate 21, and be connected with bonding substrate 21, and microthrust test angular speed sensitive body 23 can comprise: sensitive-mass block 1, be located on kerve 22, and interval separates therebetween, sensitive-mass block 1 can vibrate top to bottom, left and right, front and rear in kerve 22; Fixed fingers 5, is located at fixed fingers electrode anode 17 upper surface, and bonding firmly, and fixed fingers 5 and sensitive-mass block 1 are at same plane; Driving comb 9, be located at sensitive-mass block 1 left and right sides, comb is uniform, and intersects identical with fixed fingers 5, and the two can drive sensitive-mass block 1 under the effect of electrostatic force, makes its side-to-side vibrations.
According to the micromechanical gyro of the embodiment of the present invention, adopt overall construction design, reasonable in design is compact, can make full use of space, can suppress again drive on detect impact, be applicable to device from decoupling zero and microminiaturization.Sensitive-mass block 1 is under the activation force of static broach 9, and do linear simple harmonic vibration along X-direction, when gyroscope has turning rate input in the Y-axis direction, due to the effect of coriolis force, sensitive-mass block 1 will produce precession in the Z-axis direction.Drive combination beam 24 makes detection beam 12 that deformation occur by this precession, thus causes the silicon nanowires resistive layer 20 being made in detection beam 12 root that deformation occurs.Because silicon nanowires resistive layer 20 has huge piezoresistive effect, therefore faint deformation just can make this nano wire resistive layer that violent change in resistance occurs.So just a faint Ge Shi force signal can be changed into a stronger electrical signal, by just can detect the size of Y direction input angular velocity to the process of this signal.The measurement circuit design of this device is simple, easy to use, good reliability, is applicable to microminiaturized
Shown in Fig. 3, according to one embodiment of present invention, microthrust test angular speed sensitive body 23 comprises further: sensitive-mass block 1, holder 3, fixed fingers 5, combination beam 24, comb electrodes negative pole 16, fixed fingers electrode anode 17.
Specifically, described fixed fingers electrode anode 17 is two, be placed in the upper surface of the left and right frame of bonding substrate 21 respectively and bond firmly, and this electrode top establishes fixed fingers 5, and bonding firmly; Described comb electrodes negative pole 16 is the electrode of sensitive-mass block 1 arranged on left and right sides driving comb 9, this electrode and fixed fingers electrode anode 17, at same plane, are placed in the forward and backward frame upper surface of bonding substrate 21, and bonding firmly, and the upper surface of this electrode establishes holder 3, and bonding firmly; The surperficial uniform through hole damping hole 2 of described sensitive-mass block 1.Sensitive-mass block 1 arranged on left and right sides edge is evenly distributed with driving comb 9, and sensitive-mass block 1 is connected with holder 3 by combination beam 24.Described combination beam 24 is made up of driving beam 11, detection beam 12, contiguous block 13, and for connection fixing base and sensitive-mass block, the upper surface detecting beam 12 is provided with silicon nanowires resistance 6.
Shown in Fig. 4, according to one embodiment of present invention, sensitive-mass block 1 is rectangular, by combination beam 24 be connected to holder 3, inner side four corners position, be embedded in the kerve 22 of bonding substrate 21 upper surface; The shape of the corner symmetric position combination beam space 10 of combination beam 24 is coincide in the outer side edges shaped as frame shape of combination beam 24 just, combination beam 4 can combination beam space 10 in up and down, all around moves; Sensitive-mass block 1 can use semi-conducting material manufacturing, under the support of combination beam 24 and can in this kerve 22 all around, up-down vibration; The uniform through hole damping hole 2 in surface of sensitive-mass block 1; Damping hole 2 runs through sensitive-mass block 1, and damping hole 2 can be rounded, also can be square, and the number of the quantity of damping hole 2 and the large I of size are determined according to applied environment and ratio of damping.
Shown in Fig. 5, according to one embodiment of present invention, bonding substrate 21 is rectangular, and the center of upper surface is manufactured with kerve 22, and this kerve 22 can provide space for seesawing up and down of sensitive-mass block 1.
Shown in Fig. 6, according to one embodiment of present invention, silicon substrate 18 is provided with silicon dioxide layer 19, silicon dioxide layer 19 is provided with silicon nanowires resistance 6, the two ends of silicon nanowires resistance 6 are connected to silicon nanowires resistance positive pole 7, silicon nanowires resistance negative pole 8; Silicon nanowires resistive layer 20 adopts SOI material to make, upper layer of silicon structure forms the silicon nanowires resistance with huge piezoresistive effect after overdoping, and the width of silicon nanowires resistive layer 20, the size of length and inflection quantity will look micromechanical gyro design parameter and applied environment determines; Silicon nanowires resistance positive pole 7, silicon nanowires resistance negative pole 8 are gold copper-base alloy, carry out good process form good ohmic contact with silicon nanowires resistance positive pole 7, silicon nanowires resistance negative pole 8 at the two ends of silicon nanowires resistive layer 20.
Shown in Fig. 7-8, according to one embodiment of present invention, combination beam 24 comprises: drive beam 11, detect beam 12, contiguous block 13.Combination beam 24 end is contiguous block 13, is symmetrically arranged with drives beam 11 in the left and right portion of contiguous block 13, and drive for detecting beam 12 between beam 11 two, detect beam 12 end and connect contiguous block 13, three is structure as a whole.Drive beam 11 identical with contiguous block 13 thickness, the thickness detecting beam 12 is less than driving beam 11 and contiguous block 13, and the thickness of contiguous block 13, driving beam 11 is identical with the thickness of sensitive-mass block 1.Ensure to detect beam 12 global stiffness in the Z-axis direction to be also far smaller than and to drive beam 11 global stiffness in the Z-axis direction, can realize microthrust test angular speed sensitive body driving direction, i.e. X-direction and detection side to, namely in Z-direction from decoupling zero; Be provided with silicon nanowires resistive layer 20 at the root upper surface of detection beam 12 near holder 3 one end, this structure is gyrostatic sensitive structure.
As shown in Figure 9, according to one embodiment of present invention, fixed fingers comprises: fixed fingers pedestal 4, comb 14, comb groove 15, fixed fingers pedestal 4 be bonded on fixed fingers electrode anode 17, the side spaced set comb 14 of fixed fingers 5, be comb groove 15 between comb 14, comb 14, comb groove 15 and driving comb 9 cross correlation on sensitive-mass block 1, fixed fingers 5 is identical with the thickness of sensitive-mass block 1.
In the description of this instructions, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that, can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalents thereof.
Claims (9)
1. a micromechanical gyro, is characterized in that, described micromechanical gyro, based on the huge piezoresistive effect of SOI base, specifically comprises:
Bonding substrate, described bonding upper surface of base plate is provided with rectangular recess and kerve;
Microthrust test angular speed sensitive body, described microthrust test angular speed sensitive body is located at bonding surface, and firm with bonding substrate bonding, and microthrust test angular speed sensitive body comprises: the fixed fingers electrode anode of bonding substrate left and right side upper surface distribution; The comb electrodes negative pole of forward and backward side upper surface distribution; The fixed fingers structure that fixed fingers electrode anode upper surface is arranged; The holder that comb electrodes negative pole upper surface is arranged; Correspondence is located at the sensitive-mass block above kerve, sensitive-mass block is evenly distributed with through hole damping hole; Sensitive-mass block is connected with holder by combination beam; The detection beam root of combination beam is provided with silicon nanowires resistance as sensitive mechanism;
Fixed fingers electrode anode, described fixed fingers electrode anode is two, be placed in the upper surface of the left and right frame of bonding substrate respectively and bond firmly, and this fixed fingers electrode anode upper surface establishes fixed fingers, and bonding is firmly;
Comb electrodes negative pole, described comb electrodes negative pole is the electrode of sensitive-mass block arranged on left and right sides driving comb, this electrode and fixed fingers electrode anode are at same plane, be placed in the forward and backward frame upper surface of bonding substrate, and bonding firmly, and the upper surface of this electrode establishes holder, and bonding firmly;
Sensitive-mass block, the described uniform through hole damping hole in sensitive-mass block surface, sensitive-mass block arranged on left and right sides edge is evenly distributed with driving comb, and sensitive-mass block is connected with holder by combination beam;
Combination beam, described combination beam is formed, for connection fixing base and sensitive-mass block by driving beam, detection beam, contiguous block.
2. micromechanical gyro according to claim 1, is characterized in that, described bonding radical slab integral is rectangular configuration, and upper and lower, the side-to-side movement that can be the sensitive-mass block of microthrust test angular speed sensitive body instrument provide space.
3. micromechanical gyro according to claim 1, is characterized in that, described fixed fingers electrode anode is provided with the pedestal of described fixed fingers; Described comb electrodes negative pole is provided with described holder, and holder has former and later two, is placed in two comb electrodes negative pole upper surfaces respectively, and is connected with sensitive-mass block by combination beam; Be connected with the combination beam upper surface at position of holder is provided with silicon nanowires resistance electrode.
4. micromechanical gyro according to claim 1, is characterized in that, described sensitive-mass block is rectangle, and is embedded in the kerve of bonding substrate, and can upper and lower in this kerve, forward and backward, side-to-side movement; The described forward and backward symmetric position of sensitive-mass block is connected with holder respectively by combination beam.
5. micromechanical gyro according to claim 1, is characterized in that, described combination beam is inflection shape, drives beam to be connected by contiguous block with detection beam, and contiguous block two ends are that " several " font drives beam, and contiguous block interposition installs detection beam; Drive the thickness of beam identical with the thickness of sensitive-mass block in combination beam, the thickness detecting beam is less than both sides and drives beam, is provided with silicon nanowires resistance at the root upper surface of detection beam near holder one end.
6. micromechanical gyro according to claim 1, is characterized in that, described fixed fingers and the driving comb of described sensitive-mass block both sides of the edge intersect identical.
7. micromechanical gyro according to claim 4, it is characterized in that, the corner symmetric position of described sensitive-mass block is processed with combination beam space, and combination beam is embedded in combination beam space respectively, and combination beam can top to bottom, left and right, front and rear motion in combination beam space.
8. micromechanical gyro according to claim 5, it is characterized in that, the layer-of-substrate silicon of described detection beam is manufactured with silicon dioxide layer, silicon dioxide layer is manufactured with silicon nanowires resistive layer, the two ends of silicon nanowires resistive layer are connected to silicon nanowires resistance positive pole, silicon nanowires resistance negative pole.
9. micromechanical gyro according to claim 8, is characterized in that, described silicon nanowires resistive layer adopts SOI material to make.
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| US20140190260A1 (en) * | 2013-01-09 | 2014-07-10 | Kuan-Wen Chen | Mems apparatus |
| CN105181189B (en) * | 2015-10-23 | 2018-05-29 | 南京信息工程大学 | Silicon nanowire pressure sensor and its encapsulating structure based on huge piezoresistive characteristic |
| CN107449410A (en) * | 2017-08-15 | 2017-12-08 | 中北大学 | Microthrust test device is detected in electromagnetic drive type tunnel magnetoresistive face |
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| CN101042411A (en) * | 2007-04-19 | 2007-09-26 | 中北大学 | Three-axis piezoresistance micro-accelerometer |
| CN101270990A (en) * | 2008-05-06 | 2008-09-24 | 中北大学 | Testing apparatus of multi-layer nano-film tunneling micro-gyroscope |
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| FR2917731B1 (en) * | 2007-06-25 | 2009-10-23 | Commissariat Energie Atomique | DEVICE RESONANT TO PIEZORESISTIVE DETECTION REALIZED IN SURFACE TECHNOLOGIES |
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|---|---|---|---|---|
| CN101042411A (en) * | 2007-04-19 | 2007-09-26 | 中北大学 | Three-axis piezoresistance micro-accelerometer |
| CN101270990A (en) * | 2008-05-06 | 2008-09-24 | 中北大学 | Testing apparatus of multi-layer nano-film tunneling micro-gyroscope |
| CN101655368A (en) * | 2009-09-26 | 2010-02-24 | 中北大学 | Electromagnet driven gyroscope based on nanometer film quantum tunneling effect |
| CN102633227A (en) * | 2012-03-16 | 2012-08-15 | 中北大学 | Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure |
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