CN107607210A - A kind of temperature sensor based on metamaterial structure - Google Patents
A kind of temperature sensor based on metamaterial structure Download PDFInfo
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- CN107607210A CN107607210A CN201710900821.4A CN201710900821A CN107607210A CN 107607210 A CN107607210 A CN 107607210A CN 201710900821 A CN201710900821 A CN 201710900821A CN 107607210 A CN107607210 A CN 107607210A
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Abstract
The invention discloses a kind of temperature sensor based on metamaterial structure,Including substrate,Input micro-strip signal wire,Export micro-strip signal wire,Open stub inductance,Thermal drivers V-beam,Drive rod,Insulating barrier,Metal contact,Press welding block and microstrip line ground wire,Microstrip line ground wire is located at the lower surface of substrate,Remainder is positioned over the upper surface of substrate,Input micro-strip signal wire and export micro-strip signal wire respectively with open stub inductance connection,And it is gap to input between micro-strip signal wire and output micro-strip signal wire,One end face gap of metal contact is set,The other end is connected by insulating barrier with drive rod,Thermal drivers V-beam one end is connected with drive rod,The other end is connected with press welding block,The present invention breaches the thinking limitation of traditional detection principle,The implementation method based on phase shift detection is searched out,High sensitivity,And exported for phase shift,Measurement error is small；Also there is the advantages such as simple in construction, cost is low, small volume, low in energy consumption, process compatible.
Description
Technical field
The present invention is a kind of temperature sensor based on metamaterial structure, belongs to technical field of microelectronic devices.
Background technology
Temperature is a physical quantity closely related with daily life, and one needs in scientific experiment and production activity
One of important physical amount for measuring and controlling.Therefore, temperature sensor is a kind of application and its extensive sensor.Traditional
TEMP principle includes resistance-type, PN junction formula, thermoelectric (al) type, radiant type, optical fiber type, ultrasonic type, surface acoustic wave type and frequency
Formula etc., the temperature sensor of all kinds of principles is in operating temperature range, sensitivity, error, stability, uniformity, the linearity, body
Product, response speed, power consumption, cost etc. respectively have advantage and disadvantage, suitable for a variety of application scenarios.In recent years, both at home and abroad
Several arrangement of temperature sensor based on MEMS technology are proposed, they realize the measurement of temperature by MEMS structure, including outstanding
Arm beam voltage-resistor type temp sensor, dual-resonator digital temperature sensor, cantilever beam capacitive temperature sensor, these temperature
Sensor realizes the advantages that miniaturization of structure, high sensitivity, high uniformity, low-power consumption, low cost, tool by MEMS technology
Standby wide application prospect.
The content of the invention
To solve the above problems, the invention provides a kind of temperature sensor based on metamaterial structure, Meta Materials are utilized
The phase shift output principle of structure is realized, when environment temperature changes, thermal expansion occurs for hanging thermal drivers V-beam, causes
The displacement of drive rod, cause to be subjected to displacement by the metal contact that insulating barrier is connected with drive rod so that metal contact and input
Capacitance variations between micro-strip signal wire and output micro-strip signal wire, this causes what is be made up of the electric capacity and open stub inductance
Metamaterial structure produces corresponding phase shift output, by detecting the phase shift of metamaterial structure, realizes the measurement of temperature.Using the knot
Structure can realize high sensitivity, phase shift output and low-power consumption, and can be mutually compatible with Si or GaAs techniques, solve in material, work
The problem of skill, reliability, repeatability and production cost etc. are all many-sided, so as to be passed for temperature of the realization based on metamaterial structure
The commercial application of sensor in integrated circuits provides support and ensured.
To reach above-mentioned purpose, technical scheme is as follows：
A kind of temperature sensor based on metamaterial structure, the temperature sensor include substrate, input micro-strip signal wire, be defeated
Go out micro-strip signal wire, open stub inductance, thermal drivers V-beam, drive rod, insulating barrier, metal contact, press welding block and micro-strip
Line ground wire, the temperature sensor are to place to be made up of hanging V-beam driving structure and open stub inductance on substrate
Metamaterial structure, concrete structure are the lower surface that microstrip line ground wire is located at substrate, and remainder is positioned over the upper surface of substrate, defeated
Band signal line and output micro-strip signal wire and input micro-strip signal wire and output is micro- respectively with open stub inductance connection in a subtle way
It is gap between band signal line, one end face gap of metal contact is set, and the other end is connected by insulating barrier and drive rod
Connect, thermal drivers V-beam one end is connected with drive rod, and the other end is connected with press welding block.When environment temperature changes, hanging
Thermal expansion occurs for thermal drivers V-beam, causes the displacement of drive rod, and the metal contact for causing with drive rod to be connected by insulating barrier is sent out
Raw displacement so that the capacitance variations between metal contact and input micro-strip signal wire and output micro-strip signal wire, this causes by this
The metamaterial structure that electric capacity and open stub inductance are formed produces corresponding phase shift output, by the phase for detecting metamaterial structure
Move, realize the measurement of temperature.The phase shift formula of metamaterial structure is：
Wherein, Δ φ is phase shift variations, and f is input microwave signal frequency, and L is open stub inductance value, and C is a certain base
Reference edge capacitance at quasi- temperature, edge capacitance variable quantity when Δ C is temperature change.
The beneficial effects of the invention are as follows：
Temperature sensor of the present invention based on metamaterial structure, simple in construction, whole sensor passes through microelectronics
Processing technology, the precision of physical dimension can reach higher level, and volume significantly reduces, and is advantageously implemented the small-sized of sensor
Change；Edge capacitance pair between the hanging metal contact of the temperature sensor and input micro-strip signal wire and output micro-strip signal wire
Temperature is sensitive, high sensitivity, and is exported for phase shift, and measurement error is small；The temperature sensor breaches the think of of traditional detection principle
Dimension limitation, has searched out the implementation method based on phase shift detection, sensitivity and volume have larger lifting.Meanwhile Meta Materials
The temperature sensor of structure also has the advantages such as simple in construction, cost is low, small volume, low in energy consumption, process compatible.
Brief description of the drawings
Fig. 1 is the structural representation of the temperature sensor based on metamaterial structure.
Fig. 2 is the temperature sensor A-A ' profiles based on metamaterial structure.
Fig. 3 is the temperature sensor B-B ' profiles based on metamaterial structure.
Wherein have：Substrate 1, input micro-strip signal wire 2, output micro-strip signal wire 3, open stub inductance 4,5, thermal drivers
V-beam 6, drive rod 7, insulating barrier 8, metal contact 9, press welding block 10, microstrip line ground wire 11.
Embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Referring to Fig. 1, Fig. 2 and Fig. 3, the invention provides a kind of temperature sensor based on metamaterial structure, the temperature passes
Sensor include substrate 1, input micro-strip signal wire 2, output micro-strip signal wire 3, open stub inductance 4,5, thermal drivers V-beam 6,
Drive rod 7, insulating barrier 8, metal contact 9, press welding block 10, microstrip line ground wire 11；The microstrip line ground wire 11 is located under substrate 1
Surface, remainder are positioned over the upper surface of substrate 1, and input micro-strip signal wire 2 and output micro-strip signal wire 3 are short with open circuit respectively
Transversal inductance 4,5 connects, and it is gap to input between micro-strip signal wire 2 and output micro-strip signal wire 3, and the one of metal contact 9
Rectify and gap is set, the other end is connected by insulating barrier 8 with drive rod 7, and the one end of thermal drivers V-beam 6 connects with drive rod 7
Connect, the other end is connected with press welding block 10.
The application method of the temperature sensor is：When environment temperature changes, hanging thermal drivers V-beam 6 occurs
Thermal expansion, cause the displacement of drive rod 7, cause to be subjected to displacement by the metal contact 9 that insulating barrier 8 is connected with drive rod 7 so that
Edge capacitance between metal contact 9 and input micro-strip signal wire 2 and output micro-strip signal wire 3 changes, and this causes by the electric capacity
Corresponding phase shift output is produced with the metamaterial structure that open stub inductance 4,5 is formed, by the phase for detecting metamaterial structure
Move, realize the measurement of temperature.
The arrangement of temperature sensor is simple, and for whole sensor by microelectronic processing technology, the precision of physical dimension can be with
Reach higher level, volume significantly reduces, and is advantageously implemented the miniaturization of sensor；The hanging metal contact of the temperature sensor
Edge capacitance between input micro-strip signal wire and output micro-strip signal wire is temperature sensitive, high sensitivity, and defeated for phase shift
Go out, measurement error is small.
The temperature sensor based on metamaterial structure is different from other MEMS temperature sensors in the present invention, and the temperature passes
Sensor has following main feature：First, metal contact and input micro-strip signal wire and output micro-strip signal wire in metamaterial structure
Between edge capacitance it is temperature sensitive so that the phase shift exporting change of metamaterial structure is larger, therefore can improve sensitivity；
2nd, the temperature sensor exports for phase shift, defeated compared to the voltage of other MEMS temperature sensors, resistance or frequency variation
It is bigger to go out measurement range, measurement error is smaller；3rd, the arrangement of temperature sensor is simple, small volume and hardly consumes microwave work(
Rate, it is possible to achieve the application demand of highly reliable, miniaturization and low-power consumption；4th, the making of the temperature sensor is without special material
Expect and completely compatible with Si or GaAs techniques.
Distinguish whether be the structure standard it is as follows：
(a) realize that the displacement of temperature-driven metal contact produces edge capacitance change to sense using V-beam thermal actuator
Temperature change,
(b) using the metamaterial structure being made up of edge capacitance and open stub inductance.
Meet that the structure of two above condition should be regarded as the temperature sensor of the structure.
The foregoing is only the present invention better embodiment, protection scope of the present invention not using above-mentioned embodiment as
Limit, as long as equivalent modification that those of ordinary skill in the art are made according to disclosed content or change, should all include power
In protection domain described in sharp claim.
Claims (2)
- A kind of 1. temperature sensor based on metamaterial structure, it is characterised in that：The temperature sensor includes substrate（1）, input Micro-strip signal wire（2）, output micro-strip signal wire（3）, open stub inductance（4）（5）, thermal drivers V-beam（6）, drive rod （7）, insulating barrier（8）, metal contact（9）, press welding block（10）, microstrip line ground wire（11）；The microstrip line ground wire（11）Positioned at base Plate（1）Lower surface, remainder is positioned over substrate（1）Upper surface, input micro-strip signal wire（2）With output micro-strip signal wire （3）Respectively with open stub inductance（4）（5）Connection, and input micro-strip signal wire（2）With exporting micro-strip signal wire（3）Between For gap, metal contact（9）One end face gap set, the other end passes through insulating barrier（8）With drive rod（7）Connection, Thermal drivers V-beam（6）One end and drive rod（7）Connection, the other end and press welding block（10）Connection.
- 2. the application method of the temperature sensor based on metamaterial structure according to claim 1, it is characterised in that：Work as environment When temperature changes, hanging thermal drivers V-beam（6）Generation thermal expansion, causes drive rod（7）Displacement, cause by exhausted Edge layer（8）With drive rod（7）Connected metal contact（9）It is subjected to displacement so that metal contact（9）With inputting micro-strip signal wire （2）With output micro-strip signal wire（3）Between edge capacitance change, this causes by the electric capacity and open stub inductance（4）（5） The metamaterial structure of composition produces corresponding phase shift output, by detecting the phase shift of metamaterial structure, realizes the measurement of temperature.
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| CN201710900821.4A CN107607210A (en) | 2017-09-28 | 2017-09-28 | A kind of temperature sensor based on metamaterial structure |
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| CN108760070A (en) * | 2018-07-23 | 2018-11-06 | 南京林业大学 | A kind of temperature sensor and preparation method thereof of V-beam structure LC resonance |
| CN110132446A (en) * | 2019-05-27 | 2019-08-16 | 电子科技大学 | A kind of electromagnetic oven temp measuring system based on the load super surface of thermistor electromagnetism |
| CN112097938A (en) * | 2020-09-17 | 2020-12-18 | 南京林业大学 | Passive wireless temperature sensor based on mechanical metamaterial structure |
| CN112097936A (en) * | 2020-09-17 | 2020-12-18 | 东南大学 | Temperature sensor |
| CN114623759A (en) * | 2022-03-15 | 2022-06-14 | 东南大学 | Curvature and threshold temperature integrated sensor |
| US11929203B2 (en) | 2020-07-15 | 2024-03-12 | Shanghai United Imaging Healthcare Co., Ltd. | Superconducting magnet assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114623759B (en) * | 2022-03-15 | 2023-12-15 | 东南大学 | Curvature and threshold temperature integrated sensor |
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