CN2924545Y - Capacitive microwave power sensor - Google Patents
Capacitive microwave power sensor Download PDFInfo
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- CN2924545Y CN2924545Y CN 200620073645 CN200620073645U CN2924545Y CN 2924545 Y CN2924545 Y CN 2924545Y CN 200620073645 CN200620073645 CN 200620073645 CN 200620073645 U CN200620073645 U CN 200620073645U CN 2924545 Y CN2924545 Y CN 2924545Y
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- microwave power
- cantilever beam
- girder
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- coplanar waveguide
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Abstract
A capacitive microwave sensor utilizes microwave power transmitted on coplanar waveguide to attract cantilever beam to result in displacement of cantilever beam, and measures the configuration of microwave power transmitted on coplanar waveguide by measuring capacitance changes between cantilever beam and sensor electrode, the sensor takes the substrate GaAs or Si (1) as a substrate, a coplanar waveguide (2) is arranged on the substrate GaAs or Si (1), the ground wire (21) of the coplanar waveguide is connected with a cantilever beam (3) perpendicular to the coplanar waveguide (2), the cantilever beam (3) is suspended above of the coplanar waveguide (2), a sensor electrode (4) is connected with the bottom end of the cantilever beam (3). The capacitive microwave sensor configuration utilizes cantilever beam to induce microwave power transmitted on coplanar waveguide to produce displacement, and translates the displacement into capacitance changes, then can increase power sensor sensitivity and simplify structure, and solves the problems in materials, techniques, repeatability, producing cost and a plurality of other aspects.
Description
Technical field
The utility model is to utilize the microwave power that transmits on the co-planar waveguide attraction of MEMS semi-girder to be caused the displacement of beam, record the structure of the microwave power that transmits on the co-planar waveguide by the mode of measuring capacitance variations between semi-girder and the sensing electrode, belong to technical field of microelectronic devices.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature.In microwave wireless application and measuring technique, the detection of microwave power is a very important part.The technology of traditional measurement microwave power is based on thermistor, thermocouple or diode and realizes, and these are terminal part, and microwave signal will be fallen by full consumption in power measurement.In recent years, proposed the online microwave power detector structure of two classes based on the MEMS technology abroad: a kind of is the ohmic loss of utilizing on the co-planar waveguide signal wire, is translated into thermoelectrical potential output by placing nigh thermal reactor; Another kind is placed the MEMS film above co-planar waveguide, the displacement of its attraction generation is realized the measurement of microwave power because of the microwave power that transmits on the co-planar waveguide by measuring film.This online microwave power detector of two types is after measuring the power of microwave signal, and microwave signal still can be used, and have simple in structure, volume is little, with Si technology or GaAs technology advantage such as compatibility mutually.
Summary of the invention
Technical matters: the purpose of this utility model provides a kind of capacitance microwave power sensor, the sensor of using this structure can improve the sensitivity and the simplified structure of power sensor, and has realized the problem in all many-sides such as material, technology, repeatability and production costs.
Technical scheme: the capacitance microwave power sensor in the utility model is a substrate with GaAs or Si, on GaAs or Si substrate, be provided with co-planar waveguide, on the co-planar waveguide ground wire, connect one with the perpendicular semi-girder of co-planar waveguide, this semi-girder is suspended on the top of co-planar waveguide, is connected with a sensing electrode below the end of semi-girder.Constitute a capacitance structure between semi-girder and the sensing electrode, thereby make the displacement of semi-girder can be converted into changes in capacitance.This structure places co-planar waveguide top induction microwave power with semi-girder, and places a sensor electrode and measured so that change in displacement is converted into capacitance variations below the semi-girder free end.
Should be noted that some problems in the whole technical proposal, comprising: the control of stress in the semi-girder, this realization for the entire device structure has crucial meaning; The sensitivity of semi-girder height and device and reflection coefficient all have relation, therefore need choose suitable height so that do a compromise between sensitivity and reflection coefficient.Usually choosing the cantilever depth of beam is 1～3 micron.
The capacitance microwave power sensor structure of using in the utility model can realize the commercial application of power measurement structure in integrated circuit, and then promotes the development of whole IC industry.
Beneficial effect:, the research and development of such device only are confined to scientific research field for a long time because based on the singularity of the microwave power detector structure of MEMS technology.The large-scale production that is applied to integrated circuit based on the microwave power detector of MEMS structure exists a series of obstacles such as incompatible with main flow technology, repeatable poor, production cost height.Capacitance microwave power sensor structure among the present invention, the thermoelectric (al) power sensor of traditional thermocouple structure and the thinking restriction of technology have been broken through, searched out the implementation method based on Si or GaAs MMIC technology, compatible and repeatability all is greatly improved.Simultaneously, the capacitance microwave power sensor structure have simple in structure, wide frequency range, highly sensitive, the linearity good, can measure advantages such as smaller power.
Capacitance microwave power sensor in the utility model also is based on the MEMS technology, but be different from above-mentioned online microwave power detector, this structure utilizes the microwave signal of transmitting on the semi-girder induction co-planar waveguide to produce displacement, and it is converted into capacitance variations.Comparatively speaking, capacitance microwave power sensor has following principal feature: one, cantilever beam structure is responsive more to microwave signal, and semi-girder free end induction microwave signal generation displacement is bigger than the MEMS film, therefore can improve sensitivity; Two, cantilever beam structure consumes microwave power hardly; Three, cantilever beam structure is easier to drawing of press welding block; Four, the making of capacitance microwave power sensor need not special material and compatible fully with Si or GaAs MMIC technology.
Characteristics based on above capacitance microwave power sensor structure, the present invention as can be seen clearly compares with MEMS membrane structure microwave power detector and has improved performance, structure is simpler, and have volume little, with advantages such as Si or GaAs MMIC process compatible, high duplication, low production cost, well satisfied the basic demand of integrated circuit to device.Therefore, the structure of capacitance microwave power sensor has using value and vast market potentiality preferably.
The capacitance microwave power sensor structure provides support and assurance for real the realization based on the commercial application of power measurement structure in integrated circuit of MEMS technology.
Description of drawings
Fig. 1 is the capacitance microwave power sensor structural representation.
Wherein have: GaAs or Si substrate 1, co-planar waveguide 2, co-planar waveguide ground wire 21, semi-girder 3, sensing electrode 4.
Embodiment
Capacitance microwave power sensor of the present utility model is a substrate with GaAs or Si substrate 1, on GaAs or Si substrate 1, be provided with co-planar waveguide 2, on co-planar waveguide ground wire 21, connect one with the perpendicular semi-girder 3 of co-planar waveguide 2, this semi-girder 3 is suspended on the top of co-planar waveguide 2, is placed with a sensing electrode 4 below the end of semi-girder 3.Semi-girder 3 height all have relation with the sensitivity and the reflection coefficient of device, and the height of therefore choosing semi-girder 3 is 1～3 micron.
The manufacture craft of capacitance microwave power sensor and standard Si technology or GaAs MMIC technology are compatible fully.
The online microwave power detector based on the MEMS technology that the capacitance microwave power sensor structure is different from the past, this structure utilize the microwave signal of transmitting on the semi-girder induction co-planar waveguide to produce displacement, and it is converted into capacitance variations.Capacitance microwave power sensor has following principal character: one, cantilever beam structure is responsive more to microwave signal, and semi-girder free end induction microwave signal generation displacement is bigger than the MEMS film, so sensitivity is higher; Two, cantilever beam structure consumes microwave power hardly; Three, cantilever beam structure is easier to drawing of press welding block; Four, the manufacture craft of capacitance microwave power sensor and Si or GaAs MMIC technology are compatible fully.In addition, capacitance microwave power sensor is that dwindling with integrated of power sensing device size provides the foundation and guarantee, and provides support for further online accurate measurement microwave power simultaneously.
Distinguish whether to be the standard of this structure as follows:
(a) adopt the co-planar waveguide through-put power,
(b) semi-girder is placed on the co-planar waveguide top,
(c) below the semi-girder free end, be placed with sensing electrode.
The structure that satisfies above three conditions promptly should be considered as the structure of this capacitance microwave power sensor.
Claims (2)
1. capacitance microwave power sensor, it is characterized in that this sensor is a substrate with GaAs or Si substrate (1), on GaAs or Si substrate (1), be provided with co-planar waveguide (2), co-planar waveguide ground wire (21) go up to connect one with the perpendicular semi-girder (3) of co-planar waveguide (2), this semi-girder (3) is suspended on the top of co-planar waveguide (2), is placed with a sensing electrode (4) in the below of semi-girder (3) end.
2. capacitance microwave power sensor according to claim 1 is characterized in that semi-girder (3) height and the sensitivity and the reflection coefficient of device all have relation, and the height of therefore choosing semi-girder (3) is 1～3 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620073645 CN2924545Y (en) | 2006-06-09 | 2006-06-09 | Capacitive microwave power sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620073645 CN2924545Y (en) | 2006-06-09 | 2006-06-09 | Capacitive microwave power sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2924545Y true CN2924545Y (en) | 2007-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620073645 Expired - Fee Related CN2924545Y (en) | 2006-06-09 | 2006-06-09 | Capacitive microwave power sensor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858601B (en) * | 2006-06-09 | 2010-05-12 | 东南大学 | Capacitance microwave power sensor |
| CN101387496B (en) * | 2008-09-25 | 2010-06-16 | 中北大学 | Micro-displacement sensor based on ring micro-chamber and cantilever beam of integration plane |
| CN103746161A (en) * | 2014-01-08 | 2014-04-23 | 东南大学 | Self-protecting microwave equilizer based on MEMS (Micro Electro Mechanical System) structure |
| CN103792504A (en) * | 2012-10-31 | 2014-05-14 | 京元电子股份有限公司 | Self-test system for sensing element and method thereof |
| CN105259031A (en) * | 2008-05-16 | 2016-01-20 | 德瑞索大学 | System and method for evaluating tissue |
| CN107632193A (en) * | 2017-09-28 | 2018-01-26 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN112461887A (en) * | 2021-01-25 | 2021-03-09 | 南京高华科技股份有限公司 | Humidity sensor based on MEMS structure |
-
2006
- 2006-06-09 CN CN 200620073645 patent/CN2924545Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858601B (en) * | 2006-06-09 | 2010-05-12 | 东南大学 | Capacitance microwave power sensor |
| CN105259031A (en) * | 2008-05-16 | 2016-01-20 | 德瑞索大学 | System and method for evaluating tissue |
| US10076247B2 (en) | 2008-05-16 | 2018-09-18 | Wan Y. Shih | System and method for evaluating tissue |
| CN101387496B (en) * | 2008-09-25 | 2010-06-16 | 中北大学 | Micro-displacement sensor based on ring micro-chamber and cantilever beam of integration plane |
| CN103792504A (en) * | 2012-10-31 | 2014-05-14 | 京元电子股份有限公司 | Self-test system for sensing element and method thereof |
| CN103746161A (en) * | 2014-01-08 | 2014-04-23 | 东南大学 | Self-protecting microwave equilizer based on MEMS (Micro Electro Mechanical System) structure |
| CN103746161B (en) * | 2014-01-08 | 2015-07-29 | 东南大学 | Based on the self-shield microwave equalizer of MEMS structure |
| CN107632193A (en) * | 2017-09-28 | 2018-01-26 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN107632193B (en) * | 2017-09-28 | 2019-05-07 | 东南大学 | A kind of microwave power detector based on metamaterial structure |
| CN112461887A (en) * | 2021-01-25 | 2021-03-09 | 南京高华科技股份有限公司 | Humidity sensor based on MEMS structure |
| CN112461887B (en) * | 2021-01-25 | 2021-04-20 | 南京高华科技股份有限公司 | Humidity sensor based on MEMS structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |