CN1885047B - Piezoresistance type microwave power sensor and microwave power sensing method thereof - Google Patents
Piezoresistance type microwave power sensor and microwave power sensing method thereof Download PDFInfo
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- CN1885047B CN1885047B CN2006100853300A CN200610085330A CN1885047B CN 1885047 B CN1885047 B CN 1885047B CN 2006100853300 A CN2006100853300 A CN 2006100853300A CN 200610085330 A CN200610085330 A CN 200610085330A CN 1885047 B CN1885047 B CN 1885047B
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Abstract
The invention relates to a piezoresistance microwave power sensor which uses terminal resistance to absorb the microwave power to heat to generate film stress, and uses piezoresistance to test the input microwave power, wherein said sensor uses Si substrate (1) as substrate; the Si3N4/SiO2 layer (9) is arranged on the bottom of substrate; the Si substrate is arranged with SiO2 insulated layer (2);said SiO2 insulated layer (2) and the silicon film (11) etched on Si substrate form dual-layer film (8) structure arranged with common-surface waveguide (3). The terminal of common waveguide is arranged with matched resistance (4).
Description
Technical field
The present invention utilizes terminal resistance to absorb the microwave power heating to produce membrane stress, records the structure of input microwave power in the mode of voltage dependent resistor (VDR), belongs to technical field of microelectronic devices.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature.In microwave wireless application and measuring technique, the detection of microwave power is a very important part.Traditional power meter adopts the focus power sensor of waveguide form, bismuth-antimony commonly used is made thermocouple, adopt concentric cable as transmission line, its major defect is a low-response, the level of burning is low, will use attenuator when measuring high power, and can not be integrated in the circuit.In recent years, terminal type microwave power detector based on the MEMS technology has abroad been proposed, it is divided into two types of direct-type and indirect types, principle is to utilize terminal resistance to absorb the microwave power heating, and survey the size that near the terminal resistance temperature difference obtains microwave power by thermocouple or thermal reactor, that such microwave power detector has is simple in structure, volume is little, performance is comparatively good, with Si technology or GaAs technology advantage such as compatibility mutually.For a long time because based on the singularity of the microwave power detector structure of MEMS technology, the research and development of such device only are confined to scientific research field.The large-scale production that is applied to integrated circuit based on the microwave power detector of MEMS structure exists and a series of obstacles such as incompatible, the repeatable poor reliability of main flow technology, production cost height.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of pressure resistance type microwave power detector and microwave power method for sensing thereof, this sensor is a kind of structure of utilizing the terminal resistance heating to produce stress realization microwave power measurement on duplicature.Use this structure and can improve the sensitivity of power sensor and reduce the non-linear of output voltage, and realized problem in all many-sides such as material, technology, reliability and repeatabilities.
Technical scheme: pressure resistance type microwave power detector of the present invention is a substrate with the Si substrate, the Si3N4/SiO2 layer is located at the bottom of Si substrate, on the Si substrate, be provided with the SiO2 insulation course, the SiO2 insulation course constitutes double membrane structure with the silicon fiml that corrodes on the Si substrate, on double membrane structure, be provided with co-planar waveguide, terminal at co-planar waveguide is provided with build-out resistor, be provided with four edge＜110 at the edge of double membrane structure〉voltage dependent resistor (VDR) of direction, voltage dependent resistor (VDR) constitutes Wheatstone bridge by contacting metal by plain conductor, and four lead ends of Wheatstone bridge join with press welding block respectively.The terminal build-out resistor is placed on the center of duplicature to produce maximum STRESS VARIATION.Place on voltage dependent resistor (VDR) edge＜110〉direction, and be positioned at the center at duplicature edge, thereby make the variable quantity of resistance reach maximum.
The microwave power method for sensing of pressure resistance type microwave power detector is by the terminal build-out resistor being produced on the double membrane structure with different heat expansion coefficient, utilize the terminal build-out resistor to absorb the microwave power heating and cause producing between the duplicature levels different thermal expansions, measure the STRESS VARIATION of film by the voltage dependent resistor (VDR) at the edge that is placed on duplicature, finally obtain importing the size of microwave power.
Pressure resistance type microwave power detector of the present invention adopts the Si substrate, and obtains certain thickness silicon fiml by the substrate back etching process, is provided with SiO on the Si substrate
2Insulation course is by silicon fiml and SiO
2Insulation course constitutes double membrane structure, on double membrane structure, be provided with co-planar waveguide, terminal at co-planar waveguide is a build-out resistor, be provided with four edge＜110 at the edge of double membrane structure〉voltage dependent resistor (VDR) of direction, voltage dependent resistor (VDR) connects and composes Wheatstone bridge by plain conductor, and four lead ends and the press welding block of Wheatstone bridge join.This sensor is by being produced on the terminal build-out resistor on the double membrane structure with different heat expansion coefficient, utilize the terminal build-out resistor to absorb the microwave power heating and cause producing between the duplicature levels different thermal expansions, measure the STRESS VARIATION of film by the voltage dependent resistor (VDR) at the edge that is placed on film, finally obtain importing the size of microwave power.The pressure resistance type microwave power detector structure of using among the present invention can realize the commercial application of power measurement structure in integrated circuit, and then promotes the development of whole IC industry.
Beneficial effect: the pressure resistance type microwave power detector structure among the present invention, the thermoelectric (al) power sensor of traditional thermocouple structure and the thinking restriction of technology have been broken through, searched out the implementation method based on main flow Si technology, repeatable and reliability all is greatly improved.Simultaneously, pressure resistance type microwave power detector structure have that the linearity is good, wide frequency range, highly sensitive, can measure advantages such as smaller power.
Pressure resistance type microwave power detector among the present invention also is based on the MEMS technology, but be different from above-mentioned terminal type microwave power detector, this structure is produced on terminal resistance on the double membrane structure with different heat expansion coefficient, because absorbing the microwave power heating, terminal resistance can cause temperature variation, thereby make the different thermal expansion of generation between the duplicature levels, place the Wheatstone bridge that constitutes by voltage dependent resistor (VDR) at the edge of film and measure the stress that causes owing to thermal expansion, finally obtain importing the size of microwave power.Comparatively speaking, the pressure resistance type microwave power detector has following principal feature: one, the pressure resistance type structure is simple and measuring technique is ripe than the manufacture craft of terminal type structure; Two, pressure resistance type structural sensitivity height can obtain desirable big output and non-linear less.Three, the making of pressure resistance type structure need not special material and compatible mutually with Si technology.
Characteristics based on above pressure resistance type microwave power detector structure, the present invention as can be seen clearly compares with the terminal type microwave power detector and has improved performance, technology is simple more ripe, and taken into account simple in structure, volume is little, with advantages such as Si process compatible, high reliability, high duplication, well satisfied the basic demand of integrated circuit to device.Therefore, the structure of pressure resistance type microwave power detector has using value and vast market potentiality preferably.Pressure resistance type microwave power detector structure provides support and assurance for real the realization based on the commercial application of power measurement structure in integrated circuit of MEMS technology.
Description of drawings
Fig. 1 is a pressure resistance type microwave power detector structural representation.
Fig. 2 is a pressure resistance type microwave power detector section of structure.
Have among the above figure: Si substrate 1, silicon fiml 11, SiO
2Insulation course 2, co-planar waveguide 3, terminal resistance 4, plain conductor 5, voltage dependent resistor (VDR) 6, press welding block 7, duplicature 8, Si
3N
4/ SiO
2Layer 9, contacting metal 10.
Embodiment
Pressure resistance type microwave power detector of the present invention adopts the Si substrate, and obtains certain thickness silicon fiml by the substrate back etching process, is provided with SiO on the Si substrate
2Insulation course is by silicon fiml and SiO
2Insulation course constitutes double membrane structure, on double membrane structure, be provided with co-planar waveguide, terminal at co-planar waveguide is a build-out resistor, be provided with four edge＜110 at the edge of double membrane structure〉voltage dependent resistor (VDR) of direction, voltage dependent resistor (VDR) connects and composes Wheatstone bridge by plain conductor, and four lead ends and the press welding block of Wheatstone bridge join.This sensor is by being produced on the terminal build-out resistor on the double membrane structure with different heat expansion coefficient, utilize the terminal build-out resistor to absorb the microwave power heating and cause producing between the duplicature levels different thermal expansions, measure the STRESS VARIATION of film by the voltage dependent resistor (VDR) at the edge that is placed on film, finally obtain importing the size of microwave power.
The manufacture craft of pressure resistance type microwave power detector and standard Si process compatible.
The terminal type microwave power detector that pressure resistance type microwave power detector structure is different from the past based on the MEMS technology, this structure is by being produced on terminal resistance on the double membrane structure with different heat expansion coefficient, utilize terminal resistance to absorb the microwave power heating and cause producing between the duplicature levels different thermal expansions, measure the STRESS VARIATION of film by the voltage dependent resistor (VDR) at the edge that is placed on film, finally obtain importing the size of microwave power.The pressure resistance type microwave power detector has following principal character: one, the pressure resistance type structure is simple and measuring technique is ripe than the manufacture craft of terminal type structure; Two, pressure resistance type structural sensitivity height can obtain desirable big output and non-linear less.Three, the manufacture craft of pressure resistance type structure is compatible mutually with Si technology.In addition, the pressure resistance type microwave power detector is that dwindling with integrated of power sensing device size provides the foundation and guarantee, and provides support for further accurately measuring microwave power simultaneously.Numerous advantageous characteristic based on the Promethean invention of this structure and this invention.Distinguish whether to be the standard of this structure as follows:
(a) adopt co-planar waveguide input microwave power, and be the terminal resistance that matches in the co-planar waveguide terminal,
(b) adopt double membrane structure with different heat expansion coefficient,
(c) utilize the STRESS VARIATION of voltage dependent resistor (VDR) sense film.
The structure that satisfies above three conditions promptly should be considered as the structure of this pressure resistance type microwave power detector.
Sensor of the present invention is a substrate with Si substrate 1, Si3N4/SiO2 layer 9 is located at the bottom of Si substrate 1, on Si substrate 1, be provided with SiO2 insulation course 2, SiO2 insulation course 2 constitutes duplicature 8 structures with the silicon fiml 11 that corrosion Si substrate 1 forms, on duplicature 8 structures, be provided with co-planar waveguide 3, terminal at co-planar waveguide 3 is provided with build-out resistor 4, be provided with four edge＜110 at the edge of duplicature 8 structures〉voltage dependent resistor (VDR) 6 of direction, voltage dependent resistor (VDR) 6 constitutes Wheatstone bridge by contacting metal 10 by plain conductor 5, and four lead ends of Wheatstone bridge join with press welding block 7 respectively.Terminal build-out resistor 4 is placed on the center of duplicature 8 to produce maximum STRESS VARIATION.Place on voltage dependent resistor (VDR) 6 edges＜110〉direction, and be positioned at the center at duplicature 8 edges, thereby make the variable quantity of resistance reach maximum.
The microwave power method for sensing of pressure resistance type microwave power detector of the present invention is: this method for sensing is by being produced on terminal build-out resistor 4 on duplicature 8 structures with different heat expansion coefficient, utilize terminal build-out resistor 4 to absorb the microwave power heating and cause producing between duplicature 8 levels different thermal expansions, measure the STRESS VARIATION of films by the voltage dependent resistor (VDR) 6 at the edge that is placed on duplicature 8, finally obtain importing the size of microwave power.
Total need be produced on the duplicature 8 that is made of silicon fiml 11 and silicon dioxide insulating layer 2, thereby produces STRESS VARIATION by thermal expansions different between duplicature 8 levels.
Pressure resistance type microwave power detector structure fabrication among the present invention is on double membrane structure, utilize the co-planar waveguide input microwave power of 50 Ω characteristic impedances, terminal at co-planar waveguide inserts a terminal build-out resistor, this resistance is formed in parallel by the resistance of two 100 Ω, resistance is placed on the center of duplicature, places the Wheatstone bridge that is made of four voltage dependent resistor (VDR)s at the edge of film.
Should be noted that some problems in the whole technical proposal, comprising: the resistance of terminal resistance must be accurate as much as possible, so the control of resistance size is extremely important; The doping content of voltage dependent resistor (VDR) and pressure drag sensitivity are inversely proportional to, and are directly proportional with temperature independence, therefore will do a compromise between sensitivity and temperature independence; The piezoresistance coefficient of P type resistance is＜110〉the direction maximum, and for (100) silicon substrate, the silicon fiml edge that its back side anisotropic etch obtains is＜110〉crystal orientation, promptly want the edge of the quick resistance of pressure parallel or vertical with the silicon fiml edge; Produce silicon fiml with KOH solution anisotropic etch silicon substrate,, therefore must know the thickness of substrate, the thickness and the corrosion rate of the silicon fiml of wanting accurately because corrosion process will stop in certain time by the corrosion rate decision.
Claims (4)
1. pressure resistance type microwave power detector, it is characterized in that this sensor is a substrate with Si substrate (1), Si3N4/SiO2 layer (9) is located at the bottom of Si substrate (1), on Si substrate (1), be provided with SiO2 insulation course (2), SiO2 insulation course (2) constitutes duplicature (8) structure with the silicon fiml (11) that corrodes on the Si substrate (1), on duplicature (8) structure, be provided with co-planar waveguide (3), terminal at co-planar waveguide (3) is provided with build-out resistor (4), be provided with the voltage dependent resistor (VDR) (6) on four edges "＜110〉direction " at the edge of duplicature (8) structure, voltage dependent resistor (VDR) (6) constitutes Wheatstone bridge by contacting metal (10) by plain conductor (5), and four lead ends of Wheatstone bridge join with press welding block (7) respectively.
2. pressure resistance type microwave power detector according to claim 1 is characterized in that terminal build-out resistor (4) is placed on the center of duplicature (8) to produce maximum STRESS VARIATION.
3. pressure resistance type microwave power detector according to claim 1 is characterized in that voltage dependent resistor (VDR) (6) along "＜110〉direction " placement, and is positioned at the center at duplicature (8) edge, thereby makes the variable quantity of resistance reach maximum.
4. the microwave power method for sensing of a pressure resistance type microwave power detector as claimed in claim 1, it is characterized in that this method for sensing is by being produced on terminal build-out resistor (4) on duplicature (8) structure with different heat expansion coefficient, utilize terminal build-out resistor (4) to absorb the microwave power heating and cause producing between duplicature (8) levels different thermal expansions, measure the STRESS VARIATION of film by the voltage dependent resistor (VDR) (6) at the edge that is placed on duplicature (8), finally obtain importing the size of microwave power.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2006100853300A CN1885047B (en) | 2006-06-09 | 2006-06-09 | Piezoresistance type microwave power sensor and microwave power sensing method thereof |
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| CN2006100853300A CN1885047B (en) | 2006-06-09 | 2006-06-09 | Piezoresistance type microwave power sensor and microwave power sensing method thereof |
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| CN1885047A CN1885047A (en) | 2006-12-27 |
| CN1885047B true CN1885047B (en) | 2010-04-21 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100498348C (en) * | 2007-01-17 | 2009-06-10 | 东南大学 | Two-end heated microwave power sensor |
| CN101377531B (en) * | 2007-08-29 | 2011-09-14 | 海华科技股份有限公司 | Output power detecting structure with direction coupler and direction coupler |
| CN207468189U (en) * | 2017-09-21 | 2018-06-08 | 广东电网有限责任公司惠州供电局 | A kind of pressure resistance type MEMS temperature sensor |
| CN108594007B (en) * | 2018-05-04 | 2023-05-23 | 南京邮电大学 | Microwave power sensor based on piezoresistive effect of clamped beam |
| CN109932561B (en) * | 2019-03-27 | 2021-02-12 | 南京邮电大学 | Microwave power sensor based on composite arched beam |
| CN114839432B (en) * | 2022-04-14 | 2023-06-16 | 南京高华科技股份有限公司 | Microwave power sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302024A (en) * | 1990-10-09 | 1994-04-12 | Lockheed Sanders, Inc. | Monolithic microwave power sensor using a heat sensing diode junction |
| CN1510425A (en) * | 2002-12-26 | 2004-07-07 | 中国科学院电子学研究所 | Semiconductor thermocouple microwave power sensor |
| US6767129B2 (en) * | 2002-09-03 | 2004-07-27 | Korea Electronics Technology Institute | Microwave power sensor and method for manufacturing the same |
| CN200962131Y (en) * | 2006-06-09 | 2007-10-17 | 东南大学 | Pressure resistance microwave power sensor |
-
2006
- 2006-06-09 CN CN2006100853300A patent/CN1885047B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302024A (en) * | 1990-10-09 | 1994-04-12 | Lockheed Sanders, Inc. | Monolithic microwave power sensor using a heat sensing diode junction |
| US6767129B2 (en) * | 2002-09-03 | 2004-07-27 | Korea Electronics Technology Institute | Microwave power sensor and method for manufacturing the same |
| CN1510425A (en) * | 2002-12-26 | 2004-07-07 | 中国科学院电子学研究所 | Semiconductor thermocouple microwave power sensor |
| CN200962131Y (en) * | 2006-06-09 | 2007-10-17 | 东南大学 | Pressure resistance microwave power sensor |
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