CN1858601B - Capacitance microwave power sensor - Google Patents
Capacitance microwave power sensor Download PDFInfo
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- CN1858601B CN1858601B CN200610085329A CN200610085329A CN1858601B CN 1858601 B CN1858601 B CN 1858601B CN 200610085329 A CN200610085329 A CN 200610085329A CN 200610085329 A CN200610085329 A CN 200610085329A CN 1858601 B CN1858601 B CN 1858601B
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- microwave power
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- power sensor
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Abstract
A condenser-like microwave power sensor utilizes the microwave power transmitted on a coplanar waveguide to attract the MEMS cantilever to result in the displacement of the cantilever and gets a microwave power structure transmitted on the coplanar waveguide by testing the change of capacitance between the catilever and the sensing electrode, in which, said sensor takes GaAs or a Si substrate as the substrate with a coplanar waveguide, a cantilever vertical to and floating above the waveguide is set on the earth wire of the waveguide and a sensing electrode is connected below the end of the catilever.
Description
Technical field
The present invention utilizes the microwave power that transmits on the co-planar waveguide attraction of MEMS semi-girder to be caused the displacement of beam, record the structure of the microwave power that transmits on the co-planar waveguide by the mode of measuring capacitance variations between semi-girder and the sensing electrode, belong to technical field of microelectronic devices.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature.In microwave wireless application and measuring technique, the detection of microwave power is a very important part.The technology of traditional measurement microwave power is based on thermistor, thermocouple or diode and realizes, and these are terminal part, and microwave signal will be fallen by full consumption in power measurement.In recent years, proposed the online microwave power detector structure of two classes based on the MEMS technology abroad: a kind of is the ohmic loss of utilizing on the co-planar waveguide signal wire, is translated into thermoelectrical potential output by placing nigh thermal reactor; Another kind is placed the MEMS film above co-planar waveguide, the displacement of its attraction generation is realized the measurement of microwave power because of the microwave power that transmits on the co-planar waveguide by measuring film.This online microwave power detector of two types is after measuring the power of microwave signal, and microwave signal still can be used, and have simple in structure, volume is little, with Si technology or GaAs technology advantage such as compatibility mutually.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of capacitance microwave power sensor, the sensor of using this structure can improve the sensitivity and the simplified structure of power sensor, and has realized the problem in all many-sides such as material, technology, repeatability and production costs.
Technical scheme: the capacitance microwave power sensor among the present invention is a substrate with GaAs or Si, on GaAs or Si substrate, be provided with co-planar waveguide, on the co-planar waveguide ground wire, connect one with the perpendicular semi-girder of co-planar waveguide, this semi-girder is suspended on the top of co-planar waveguide, is connected with a sensing electrode below the end of semi-girder.Constitute a capacitance structure between semi-girder and the sensing electrode, thereby make the displacement of semi-girder can be converted into changes in capacitance.This structure places co-planar waveguide top induction microwave power with semi-girder, and places a sensor electrode and measured so that change in displacement is converted into capacitance variations below the semi-girder free end.
Should be noted that some problems in the whole technical proposal, comprising: the control of stress in the semi-girder, this realization for the entire device structure has crucial meaning; The sensitivity of semi-girder height and device and reflection coefficient all have relation, therefore need choose suitable height so that do a compromise between sensitivity and reflection coefficient.Usually choosing the cantilever depth of beam is 1～3 micron.
The capacitance microwave power sensor structure of using among the present invention can realize the commercial application of power measurement structure in integrated circuit, and then promotes the development of whole IC industry.
Capacitance microwave power sensor among the present invention also is based on the MEMS technology, but be different from above-mentioned online microwave power detector, this structure utilizes the microwave signal of transmitting on the semi-girder induction co-planar waveguide to produce displacement, and it is converted into capacitance variations. Comparatively speaking, capacitance microwave power sensor has following principal feature: one, cantilever beam structure is responsive more to microwave signal, and semi-girder free end induction microwave signal generation displacement is bigger than the MEMS film, therefore can improve sensitivity; Two, cantilever beam structure consumes microwave power hardly; Three, cantilever beam structure is easier to drawing of press welding block; Four, the making of capacitance microwave power sensor need not special material and compatible fully with Si or GaAs MMIC technology.
Characteristics based on above capacitance microwave power sensor structure, the present invention as can be seen clearly compares with MEMS membrane structure microwave power detector and has improved performance, structure is simpler, and have volume little, with advantages such as Si or GaAs MMIC process compatible, high duplication, low production cost, well satisfied the basic demand of integrated circuit to device.Therefore, the structure of capacitance microwave power sensor has using value and vast market potentiality preferably.
Beneficial effect:, the research and development of such device only are confined to scientific research field for a long time because based on the singularity of the microwave power detector structure of MEMS technology.The large-scale production that is applied to integrated circuit based on the microwave power detector of MEMS structure exists a series of obstacles such as incompatible with main flow technology, repeatable poor, production cost height.Capacitance microwave power sensor structure among the present invention, the thermoelectric (al) power sensor of traditional thermocouple structure and the thinking restriction of technology have been broken through, searched out the implementation method based on Si or GaAs MMIC technology, compatible and repeatability all is greatly improved.Simultaneously, the capacitance microwave power sensor structure have simple in structure, wide frequency range, highly sensitive, the linearity good, can measure advantages such as smaller power.The capacitance microwave power sensor structure provides support and assurance for real the realization based on the commercial application of power measurement structure in integrated circuit of MEMS technology.
Description of drawings
Fig. 1 is the capacitance microwave power sensor structural representation.
Wherein have: GaAs or Si substrate 1, co-planar waveguide 2, co-planar waveguide ground wire 21, semi-girder 3, sensing electrode 4.
Embodiment
Capacitance microwave power sensor of the present invention is a substrate with GaAs or Si substrate 1, on GaAs or Si substrate 1, be provided with co-planar waveguide 2, on co-planar waveguide ground wire 21, connect one with the perpendicular semi-girder 3 of co-planar waveguide 2, this semi-girder 3 is suspended on the top of co-planar waveguide 2, is placed with a sensing electrode 4 below the end of semi-girder 3.Semi-girder 3 height all have relation with the sensitivity and the reflection coefficient of device, and the height of therefore choosing semi-girder 3 is 1～3 micron.
The manufacture craft of capacitance microwave power sensor and standard Si technology or GaAs MMIC technology are compatible fully.
The online microwave power detector based on the MEMS technology that the capacitance microwave power sensor structure is different from the past, this structure utilize the microwave signal of transmitting on the semi-girder induction co-planar waveguide to produce displacement, and it is converted into capacitance variations.Capacitance microwave power sensor has following principal character: one, cantilever beam structure is responsive more to microwave signal, and semi-girder free end induction microwave signal generation displacement is bigger than the MEMS film, so sensitivity is higher; Two, cantilever beam structure consumes microwave power hardly; Three, cantilever beam structure is easier to drawing of press welding block; Four, the manufacture craft of capacitance microwave power sensor and Si or GaAs MMIC technology are compatible fully.In addition, capacitance microwave power sensor is that dwindling with integrated of power sensing device size provides the foundation and guarantee, and provides support for further online accurate measurement microwave power simultaneously.
Distinguish whether to be the standard of this structure as follows:
(a) adopt the co-planar waveguide through-put power,
(b) semi-girder is placed on the co-planar waveguide top,
(c) below the semi-girder free end, be placed with sensing electrode.
The structure that satisfies above three conditions promptly should be considered as the structure of this capacitance microwave power sensor.
Claims (2)
1. capacitance microwave power sensor, it is characterized in that this sensor is a substrate with GaAs or Si substrate (1), on GaAs or Si substrate (1), be provided with co-planar waveguide (2), co-planar waveguide ground wire (21) go up to connect one with the perpendicular semi-girder (3) of co-planar waveguide (2), this semi-girder (3) is suspended on the top of co-planar waveguide (2), is placed with a sensing electrode (4) in the below of semi-girder (3) end.
2. capacitance microwave power sensor according to claim 1 is characterized in that semi-girder (3) height and the sensitivity and the reflection coefficient of device all have relation, and the height of therefore choosing semi-girder (3) is 1～3 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610085329A CN1858601B (en) | 2006-06-09 | 2006-06-09 | Capacitance microwave power sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610085329A CN1858601B (en) | 2006-06-09 | 2006-06-09 | Capacitance microwave power sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1858601A CN1858601A (en) | 2006-11-08 |
| CN1858601B true CN1858601B (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200610085329A Expired - Fee Related CN1858601B (en) | 2006-06-09 | 2006-06-09 | Capacitance microwave power sensor |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100498348C (en) * | 2007-01-17 | 2009-06-10 | 东南大学 | Two-end heated microwave power sensor |
| CN101332971B (en) * | 2008-07-29 | 2011-07-06 | 东南大学 | Passing type microwave power detector based on microelectronic mechanical cantilever beam and manufacturing method |
| CN102375090B (en) * | 2011-09-22 | 2014-08-06 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN103091835B (en) * | 2013-02-05 | 2015-04-15 | 无锡微奥科技有限公司 | Vertical large displacement micro-electromechanical system (MEMS) micromirror and processing technology |
| CN103278681B (en) * | 2013-05-20 | 2015-03-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN103257268B (en) * | 2013-05-20 | 2015-06-03 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN103346786B (en) * | 2013-06-19 | 2015-09-09 | 东南大学 | Based on phase-locked loop and the preparation method of micromachine cantilever beam condenser type power sensor |
| CN103743947B (en) * | 2014-01-08 | 2016-06-29 | 东南大学 | Linear capacitance type micro-wave power sensor based on MEMS structure |
| CN104635910A (en) * | 2014-12-30 | 2015-05-20 | 宁波江东波莫纳电子科技有限公司 | Power management control system for computer |
| CN105486884B (en) * | 2015-12-03 | 2018-09-18 | 东南大学 | A kind of airspeedometer based on micromechanics coupler and direct-type power sensor |
| CN105548604B (en) * | 2015-12-03 | 2018-09-18 | 东南大学 | A kind of beam type wind speed wind direction sensor and its measurement method based on coplanar waveguide transmission line |
| CN106932636B (en) * | 2017-05-05 | 2023-04-25 | 南京邮电大学 | Capacitive microwave power sensor with three-finger staggered structure |
| CN110579643A (en) * | 2019-09-16 | 2019-12-17 | 南京邮电大学 | Microwave power sensor based on arc-shaped clamped beam |
| CN110568256B (en) * | 2019-10-16 | 2021-09-28 | 南京邮电大学 | Online microwave power sensor based on double-layer beam structure and use method thereof |
| CN111679364B (en) * | 2020-06-02 | 2021-07-27 | 中国科学院上海微系统与信息技术研究所 | Suspended edge coupler applied to intermediate infrared band |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2844791A (en) * | 1952-03-04 | 1958-07-22 | Thompson Prod Inc | Micro wave power measuring instrument |
| CN1359009A (en) * | 2000-12-14 | 2002-07-17 | 中国科学院电子学研究所 | Microbridge structured thermalcouple type microwave power sensor |
| CN1588099A (en) * | 2004-09-27 | 2005-03-02 | 东南大学 | Direct heating terminal type micro electronic mechanical system microwave power sensor and its producing method |
| CN2924545Y (en) * | 2006-06-09 | 2007-07-18 | 东南大学 | Capacitive microwave power sensor |
-
2006
- 2006-06-09 CN CN200610085329A patent/CN1858601B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2844791A (en) * | 1952-03-04 | 1958-07-22 | Thompson Prod Inc | Micro wave power measuring instrument |
| CN1359009A (en) * | 2000-12-14 | 2002-07-17 | 中国科学院电子学研究所 | Microbridge structured thermalcouple type microwave power sensor |
| CN1588099A (en) * | 2004-09-27 | 2005-03-02 | 东南大学 | Direct heating terminal type micro electronic mechanical system microwave power sensor and its producing method |
| CN2924545Y (en) * | 2006-06-09 | 2007-07-18 | 东南大学 | Capacitive microwave power sensor |
Non-Patent Citations (2)
| Title |
|---|
| 范小燕等.MEMS微波功率传感器的研究与进展.微波学报21 2.2005,21(2),63-69. |
| 范小燕等.MEMS微波功率传感器的研究与进展.微波学报21 2.2005,21(2),63-69. * |
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| CN1858601A (en) | 2006-11-08 |
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