CN203275512U - Sensor of intelligently detecting microwave power - Google Patents
Sensor of intelligently detecting microwave power Download PDFInfo
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- CN203275512U CN203275512U CN 201320272166 CN201320272166U CN203275512U CN 203275512 U CN203275512 U CN 203275512U CN 201320272166 CN201320272166 CN 201320272166 CN 201320272166 U CN201320272166 U CN 201320272166U CN 203275512 U CN203275512 U CN 203275512U
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- microwave power
- planar waveguide
- girder
- coplanar waveguide
- microwave
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Abstract
The utility model discloses a sensor of intelligently detecting a microwave power. The sensor of intelligently detecting the microwave power comprises a substrate, and a coplanar waveguide first earth wire, a coplanar waveguide signal line, a coplanar waveguide second earth wire, a sensing electrode, a driving electrode and a system on chip (SOC) circuit which are arranged on the substrate orderly, and a seesaw type double-end cantilever beam which is arranged on the coplanar waveguide second earth wire and is perpendicular to coplanar waveguides. The middle lower side of the seesaw type double-end cantilever beam is connected with the coplanar waveguide second earth wire; one end of the seesaw type double-end cantilever beam is hung over the coplanar waveguide signal line, and the other end is hung over the sensing electrode and the driving electrode; and the SOC circuit is connected with the coplanar waveguide second earth wire, the sensing electrode and the driving electrode separately via conducting wires. The sensor of intelligently detecting the microwave power of the utility model enables the influences of a power sensing structure on the device reflection coefficient to be reduced furthest, guarantees a good microwave signal transmission performance, at the same time, enables the sensitivity and intelligentization of a power sensor to be improved.
Description
Technical field
The utility model belongs to technical field of microelectronic devices, relates to the structure of measuring the microwave power that transmits on co-planar waveguide.
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal feature.In microwave wireless application and measuring technique, the detection of microwave power is a very important part.The technology of traditional measurement microwave power is based on thermistor, thermocouple or diode and realizes, and these are terminal part, and microwave signal will be completely consumed in power measurement.In recent years, proposed the online microwave power detector structure of three classes based on the MEMS technology abroad: a kind of is the ohmic loss of utilizing on the co-planar waveguide signal wire, is translated into thermoelectrical potential output by placing nigh thermal reactor; The second is placed the MEMS film above co-planar waveguide, the displacement of its attraction generation is realized the measurement of microwave power by measuring film because of the microwave power that transmits on co-planar waveguide; The third places the MEMS film above co-planar waveguide, the sub-fraction microwave power is coupled out and introduces the measurement that thermoelectric pile is realized microwave power by the coupling capacitance between film and signal wire.The online microwave power detector of this three types is after measuring the power of microwave signal, and microwave signal still can be used, and have simple in structure, volume is little, with Si technique or the GaAs technique advantage such as compatible mutually.
Intelligent Measurement microwave power detector in the utility model also is based on the MEMS technology, but be different from above-mentioned online microwave power detector, this structure is utilized the microwave signal of transmitting on a wherein end induction co-planar waveguide of moving seesaw-type both-end semi-girder, pass through SOC(System on chip at the other end, system integrated chip) circuit module intelligent compensation and apply voltage and make seesaw keep in the horizontal direction balance is converted into the variation of microwave power the variation of voltage.Comparatively speaking, the Intelligent Measurement microwave power detector has following principal feature: one, the moving seesaw-type cantilever beam structure is more responsive to microwave signal, and semi-girder free end induction microwave signal generation displacement is larger than traditional MEMS film or single-ended semi-girder, therefore can improve sensitivity; Two, apply voltage by the other end at seesaw and make seesaw keep the mode of balance, reduce the deteriorated of original microwave signal transmission performance of causing due to stray capacitance that seesaw is introduced on the microwave signal line; Three, by the SOC circuit, intelligent compensation is carried out in the variation of the equivalent voltage that applies, measuring accuracy can further improve by the optimization to the SOC circuit; Four, the making of whole microwave power detector need not special material and fully compatible with Si or GaAs MMIC technique.
Characteristics based on above Intelligent Measurement microwave power detector structure, can find out that the utility model is compared with traditional MEMS membrane structure or semi-girder microwave power detector and improved performance clearly, measure robotization more and accurately, and have and greatly to reduce test structure to the effect of signal transmission microwave property impact.The utility model structural volume is little, with the advantages such as Si or GaAs process compatible, high duplication, low production cost, well satisfied the basic demand of integrated circuit to device.Therefore, the structure of Intelligent Measurement microwave power detector has using value and wide market potential preferably.
The utility model content
Technical matters:The utility model provides a kind of sensitivity and intellectuality that can improve power sensor, and has reduced the reflection coefficient of device, has realized the Intelligent Measurement microwave power detector of the optimize transmissions of original microwave signal.
﹠lt, b TranNum="62" ﹠gt, technical scheme: ﹠lt, / b ﹠gt, Intelligent Measurement microwave power detector of the present utility model, the substrate that comprises GaAs or Si material, be arranged in order co-planar waveguide first ground wire of setting on substrate, the co-planar waveguide signal wire, co-planar waveguide the second ground wire, sensing electrode, drive electrode and SOC circuit, and be arranged on co-planar waveguide the second ground wire and the moving seesaw-type both-end semi-girder vertical with co-planar waveguide, the middle part downside of moving seesaw-type both-end semi-girder is connected with co-planar waveguide the second ground wire, the unsettled top that is arranged at the co-planar waveguide signal wire of one end, the unsettled top that is arranged at sensing electrode and drive electrode of the other end, the SOC circuit by wire respectively with co-planar waveguide the second ground wire, sensing electrode is connected with drive electrode.
In the utility model, the sensing electrode of one end of moving seesaw-type both-end semi-girder and its below consists of the inductance capacitance structure, thereby can weigh the quality of balance of the horizontal direction of seesaw by the variation of Detection capacitance, adjust on this basis the size of the actuation voltage that applies.This structure is placed in co-planar waveguide top induction microwave power with an end of moving seesaw-type both-end semi-girder, and places a drive electrode be converted into change in voltage with the variation with microwave power and measured below another free end of both-end semi-girder.
In the utility model, moving seesaw-type both-end semi-girder passes through SOC circuit measuring inductance capacitance value, and keeps the balance of moving seesaw-type both-end semi-girder by applying balanced voltage.
In the utility model, co-planar waveguide the first ground wire, co-planar waveguide signal wire and co-planar waveguide the second ground wire form co-planar waveguide.
Should be noted that some problems in whole technical scheme, comprising: the control of stress in moving seesaw-type both-end semi-girder, this tool of realizing for whole device architecture is of great significance; Sensitivity and the reflection coefficient of semi-girder height and device have relation, therefore need to choose suitable elemental height in order to do a compromise between sensitivity and reflection coefficient.
The Intelligent Measurement microwave power detector structure of using in the utility model can realize the commercial application of power measurement structure in integrated circuit, and then promotes the development of whole IC industry.
The utility model is to utilize the microwave power that transmits on co-planar waveguide the wherein attraction of an end of moving seesaw-type MEMS both-end semi-girder to be caused the deflection of beam, the equivalent voltage that applies corresponding size at the other end comes balancing seesaw, by the SOC circuit, equivalent voltage is carried out intelligent compensation and measurement, obtain the size of equivalent voltage corresponding to microwave power, finally record the microwave power that transmits on co-planar waveguide.
Beneficial effect:The utility model compared with prior art has the following advantages:
1, avoid introducing stray capacitance, microwave property is excellent; 2, simple in structure, highly sensitive; 3, has very wide operating frequency range; 4, the measurement by balanced voltage realizes reading of direct current signal, and measuring accuracy can be improved by the optimization of SOC circuit; 5, manufacture craft and Si or GaAs process compatible.
Prior art realizes the measurement of microwave power by the capacitance change between detection MEMS membrane structure and microwave transmission line, and the utility model is to apply by placing drive electrode at an end of moving seesaw-type both-end semi-girder the measurement that balanced voltage is realized microwave power.Sensor of the present utility model can improve sensitivity and the intellectuality of power sensor, and has reduced the reflection coefficient of device, has realized the optimize transmissions of original microwave signal.Intelligent Measurement microwave power detector structure provides support and has guaranteed based on the commercial application of power measurement structure in integrated circuit of MEMS technology for real the realization.
The utility model is by an end induction microwave power of moving seesaw-type both-end semi-girder, apply by the other end balance that balanced voltage keeps seesaw, farthest reduce the power sensing structure to the impact of device reflection coefficient, guarantee the good transmission performance of microwave signal, realize simultaneously the intellectuality of voltage-regulation and measurement by the SOC circuit.
For a long time due to the singularity based on the microwave power detector structure of MEMS technology, the research and development of such device only are confined to scientific research field.The large-scale production that is applied to integrated circuit based on the microwave power detector of MEMS structure exists a series of obstacles such as incompatible with main flow technique, that repeatability is poor, production cost is high.Intelligent Measurement microwave power detector structure in the utility model, the thermoelectric (al) power sensor of traditional thermocouple structure and the thinking restriction of technique have been broken through, searched out the implementation method based on Si or GaAs technique, compatible and repeatability all is greatly improved.Simultaneously, Intelligent Measurement microwave power detector structure has simple in structure, wide frequency range, microwave property is good, highly sensitive, the linearity good, the advantage such as intelligent.
Description of drawings
Fig. 1 is Intelligent Measurement microwave power detector structural representation.
Have in figure: GaAs or Si substrate 1, co-planar waveguide 2, co-planar waveguide the first ground wire 21, moving seesaw-type both-end semi-girder 3, sensing electrode 4, drive electrode 5, SOC circuit 6.
Embodiment
Intelligent Measurement microwave power detector of the present utility model with GaAs or Si material as substrate 1, be provided with co-planar waveguide 2, sensing electrode 4, drive electrode 5 and SOC circuit 6 on substrate 1, co-planar waveguide 2 is made of co-planar waveguide the first ground wire 21, co-planar waveguide signal wire 22 and co-planar waveguide the second ground wire 23.Connect on co-planar waveguide the second ground wire 23 one with the perpendicular moving seesaw-type both-end semi-girder 3 of co-planar waveguide 2, one end of this moving seesaw-type both-end semi-girder 3 is suspended on the top of co-planar waveguide signal wire 22, be placed with a sensing electrode 4 and a drive electrode 5 below the other end of moving seesaw-type both-end semi-girder 3, the another side of drive electrode 5 is voltage intelligent compensations and measures SOC circuit 6.this microwave power detector is responded to the microwave signal power level of transmission on co-planar waveguide 2 and produces displacement by an end of both-end semi-girder 3, the other end of both-end semi-girder 3 and sensing electrode 4 consist of the inductance capacitance structure, the both arms semi-girder is because the displacement meeting of the microwave signal power level generation of transmission on induction co-planar waveguide 2 causes the other end of both-end semi-girder 3 and the appearance value variation that sensing electrode 4 consists of inductance capacitances, measuring SOC circuit 6 detects the variation of inductance capacitance and applies balanced voltage, make the both-end semi-girder keep in the horizontal direction balance, measure the power level of microwave signal by detecting this size that applies balanced voltage.
The manufacture craft of Intelligent Measurement microwave power detector and standard Si technique or GaAs technique are fully compatible.
The online microwave power detector based on the MEMS technology that Intelligent Measurement microwave power detector structure is different from the past, this structure is utilized the microwave signal of transmitting on a wherein end induction co-planar waveguide of moving seesaw-type both-end semi-girder, by SOC circuit module intelligent compensation with apply voltage and make seesaw keep in the horizontal direction balance, the variation of microwave power is converted into the variation of voltage at the other end.Comparatively speaking, the Intelligent Measurement microwave power detector has following principal feature: one, the moving seesaw-type cantilever beam structure is more responsive to microwave signal, and semi-girder free end induction microwave signal generation displacement is larger than traditional MEMS film or single-ended semi-girder, therefore can improve sensitivity; Two, apply voltage by the other end at seesaw and make seesaw keep the mode of balance, reduce the deteriorated of original microwave signal transmission performance of causing due to stray capacitance that seesaw is introduced on the microwave signal line; Three, by the SOC circuit, intelligent compensation is carried out in the variation of the equivalent voltage that applies, measuring accuracy can further improve by the optimization to the SOC circuit; Four, the making of whole microwave power detector need not special material and fully compatible with Si or GaAs technique.In addition, the Intelligent Measurement microwave power detector is miniaturization, intellectuality, integrated the providing the foundation and guarantee of power sensing device, provides support for further accurately measuring online microwave power simultaneously.
Distinguish that to be whether the standard of this structure as follows:
(a) adopt the co-planar waveguide through-put power,
(b) be placed on co-planar waveguide top by moving seesaw-type both-end semi-girder,
(c) be placed with sensing electrode and drive electrode below free end of both-end semi-girder,
(d) realize the automatic adjusting of voltage parameter by the SOC circuit.
The structure that satisfies above four conditions namely should be considered as the structure of this Intelligent Measurement microwave power detector.
Claims (3)
1. Intelligent Measurement microwave power detector, it is characterized in that, this sensor comprises the substrate (1) of GaAs or Si material, be arranged in order co-planar waveguide first ground wire (21) of setting on described substrate (1), co-planar waveguide signal wire (22), co-planar waveguide the second ground wire (23), sensing electrode (4), drive electrode (5) and SOC circuit (6), and be arranged on described co-planar waveguide the second ground wire (23) and the moving seesaw-type both-end semi-girder (3) vertical with co-planar waveguide (2), the middle part downside of described moving seesaw-type both-end semi-girder (3) is connected with co-planar waveguide the second ground wire (23), the unsettled top that is arranged at co-planar waveguide signal wire (22) of one end, the unsettled top that is arranged at sensing electrode (4) and drive electrode (5) of the other end, described SOC circuit by wire respectively with co-planar waveguide the second ground wire (23), sensing electrode (4) is connected 5 with drive electrode) connect.
2. Intelligent Measurement microwave power detector according to claim 1, is characterized in that, the sensing electrode (4) of an end of described moving seesaw-type both-end semi-girder (3) and its below consists of the inductance capacitance structure.
3. Intelligent Measurement microwave power detector according to claim 1, it is characterized in that, described moving seesaw-type both-end semi-girder (3) is measured the inductance capacitance value by SOC circuit (6), and keeps the balance of moving seesaw-type both-end semi-girder (3) by applying balanced voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320272166 CN203275512U (en) | 2013-05-20 | 2013-05-20 | Sensor of intelligently detecting microwave power |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320272166 CN203275512U (en) | 2013-05-20 | 2013-05-20 | Sensor of intelligently detecting microwave power |
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| CN203275512U true CN203275512U (en) | 2013-11-06 |
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| CN 201320272166 Withdrawn - After Issue CN203275512U (en) | 2013-05-20 | 2013-05-20 | Sensor of intelligently detecting microwave power |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257268A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN109270340A (en) * | 2018-12-06 | 2019-01-25 | 南京邮电大学 | A kind of moving seesaw-type microwave power detector of dilatation |
| CN110568256A (en) * | 2019-10-16 | 2019-12-13 | 南京邮电大学 | Online microwave power sensor based on double-layer beam structure and use method thereof |
| CN111044798A (en) * | 2019-12-31 | 2020-04-21 | 东南大学 | MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof |
-
2013
- 2013-05-20 CN CN 201320272166 patent/CN203275512U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257268A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN103257268B (en) * | 2013-05-20 | 2015-06-03 | 东南大学 | Warping plate type intelligent detection microwave power sensor |
| CN109270340A (en) * | 2018-12-06 | 2019-01-25 | 南京邮电大学 | A kind of moving seesaw-type microwave power detector of dilatation |
| CN109270340B (en) * | 2018-12-06 | 2023-09-15 | 南京邮电大学 | Capacity-expanded seesaw type microwave power sensor |
| CN110568256A (en) * | 2019-10-16 | 2019-12-13 | 南京邮电大学 | Online microwave power sensor based on double-layer beam structure and use method thereof |
| CN110568256B (en) * | 2019-10-16 | 2021-09-28 | 南京邮电大学 | Online microwave power sensor based on double-layer beam structure and use method thereof |
| CN111044798A (en) * | 2019-12-31 | 2020-04-21 | 东南大学 | MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof |
| CN111044798B (en) * | 2019-12-31 | 2021-10-26 | 东南大学 | MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20131106 Effective date of abandoning: 20150603 |
|
| RGAV | Abandon patent right to avoid regrant |