CN103743947B - Linear capacitance type micro-wave power sensor based on MEMS structure - Google Patents
Linear capacitance type micro-wave power sensor based on MEMS structure Download PDFInfo
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- CN103743947B CN103743947B CN201410009225.3A CN201410009225A CN103743947B CN 103743947 B CN103743947 B CN 103743947B CN 201410009225 A CN201410009225 A CN 201410009225A CN 103743947 B CN103743947 B CN 103743947B
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Abstract
The invention discloses a kind of linear capacitance type micro-wave power sensor based on MEMS structure, including substrate, on substrate, it is arranged in order the cantilever beam anchor district of setting, microstrip line, sensing electrode, and it is arranged on the irregularly shaped cantilever beam above microstrip line, one end of cantilever beam is connected with cantilever beam anchor district, and the other end is corresponding unsettled above induction electrode.The present invention utilizes the cantilever beam sensing microwave power being suspended on above microstrip line and produces bending, contacts, with induction electrode, the capacitance size formed by cantilever beam and realizes the measurement of microwave power.Meanwhile, the present invention is by adopting " zip mode " motion contacted between irregular cantilever beam shape and free end and the induction electrode of cantilever beam, it is achieved linearizing output between hand capacity value and microwave power.Present invention achieves linearisation output, reduce subsequent process circuit and demarcate test request, having expanded the range of application of sensor.
Description
Technical field
The invention belongs to technical field of microelectronic devices, relate to the structure of a kind of microwave power measured and transmit on microstrip line.
Background technology
In research of microwave technology, microwave power is the important parameter characterizing microwave signal feature.In microwave wireless application and measurement technology, the detection of microwave power is a very important part.Traditional technology measuring microwave power is based on critesistor, thermocouple or diode and realizes, and these are terminal part, and microwave signal will be completely consumed in power measurement.In recent years, propose three classes both at home and abroad based on MEMS(Chinese) the online microwave power detector structure of technology: a kind of is utilize the ohmic loss on co-planar waveguide holding wire, is translated into thermoelectrical potential output by placing nigh thermal reactor；The second places MEMS film above co-planar waveguide, by measure film because of on co-planar waveguide the microwave power of transmission its displacement attracting to produce is realized the measurement of microwave power；The third places MEMS film above co-planar waveguide, is coupled out by sub-fraction microwave power and introduces thermoelectric pile realized the measurement of microwave power by the electric capacity that couples between film with holding wire.The online microwave power detector of these three type is after measuring the power of microwave signal, and microwave signal still can use, and it is little with Si technique or the GaAs technique advantage such as compatible mutually to have simple in construction, volume.
Microwave power detector in the present invention is also based on MEMS technology, adopts the microwave signal of transmission on cantilever beam sensing microstrip line to produce displacement, and realizes the test of microwave power by the change of electric capacity between induction electrode measurement cantilever beam and induction electrode.This structure adopts capacitive principle, but unlike that above-mentioned online microwave power detector, the cantilever beam of this structure adopts the linearisation that irregular shape and " zip mode " motion realize capacitance change and microwave power size to export.Comparatively speaking, microwave power detector in the present invention has following main feature: one, cantilever beam structure is more sensitive to microwave signal, and the bulky capacitor that contacts that cantilever beam sensing microwave signal generation displacement achieves between cantilever beam free end and induction electrode changes, sensitivity therefore can be improved；Two, cantilever beam consumes microwave power hardly；Three, erose cantilever beam structure and " zip mode " motion are capable of the linearisation output between capacitance and microwave power, reduce subsequent process circuit and demarcate test request；Four, the making without special material and completely compatible with Si or GaAs technique of whole microwave power detector.
Feature based on above linear capacitance type micro-wave Power sensor arrangement, it can readily be seen that the present invention improves performance compared with other online microwave power detector, simplify subsequent process circuit, it is prone to measure and demarcate, and have that volume is little and the advantage such as Si or GaAsMMIC process compatible, high duplication, low production cost, well meet the integrated circuit basic demand to device.Therefore, linear capacitance type micro-wave power sensor has good using value and wide market potential.
Summary of the invention
Goal of the invention: it is an object of the invention to provide one and can obtain linearisation output, simplify subsequent process circuit and demarcate the linear capacitance type micro-wave power sensor measuring workload.
Technical scheme: for achieving the above object, the scheme that the present invention adopts is: a kind of linear capacitance type micro-wave power sensor based on MEMS structure, this sensor include substrate, over the substrate successively spaced cantilever beam anchor district, microstrip line, sensing electrode, and it is arranged on the cantilever beam above microstrip line, one end of cantilever beam is connected with cantilever beam anchor district, and the other end is corresponding unsettled above induction electrode.
Preferably, described cantilever beam adopts irregularly shaped.
Preferably, induction electrode includes the induction electrode metal being arranged on substrate and the induction electrode insulating barrier being located on induction electrode metal, " zip mode " motion is adopted between free end and the induction electrode of cantilever beam, adopting between free end and the induction electrode of cantilever beam " " motion, namely the free end of cantilever beam adopts, with sensing electrode, the motion mode progressively contacted with induction electrode by cantilever beam free end top to direction, cantilever beam anchor district to zip mode.
Beneficial effect: the present invention compared with prior art, has the advantage that
1, linearisation output, subsequent process circuit and demarcation test request is low；2, simple in construction, reliability is high；3, metal-insulating layer-metal capacitor is adopted, highly sensitive；4, there is very wide operating frequency range；5, processing technology and Si or GaAs process compatible.
Prior art realizes the measurement of microwave power by detecting the capacitance change between cantilever beam structure and microwave transmission line, existence with air layer, therefore capacitance change is little, sensitivity is not high, and the present invention realizes the detection of microwave power by measuring the hand capacity between cantilever beam and induction electrode.Sensor of the invention can improve the sensitivity of power sensor, and reduced subsequent process circuit by linearisation output and demarcate test request, has expanded the range of application of sensor.Linear capacitance type micro-wave Power sensor arrangement is that the real commercial application in integrated circuits of the power measurement structure based on MEMS technology that realizes provides support and ensures.
For a long time due to the particularity of the microwave power detector structure based on MEMS technology, the research and development of such device are limited only to scientific research field.It is applied to the large-scale production of integrated circuit based on the microwave power detector of MEMS structure and there are a series of obstacles such as difference incompatible with prevailing technology, repeatable, production cost be high.Linear capacitance type micro-wave Power sensor arrangement in the present invention, breaches the thinking restriction of the power sensor of traditional nonlinear object, has searched out the method that realizes based on Si or GaAs technique, and compatible and repeatability is all greatly improved.Meanwhile, linear capacitance type micro-wave Power sensor arrangement has that simple in construction, output linearity, wide frequency range, microwave property be good, sensitivity advantages of higher.
Accompanying drawing explanation
Fig. 1 a is linear capacitance type micro-wave Power sensor arrangement top view.
Fig. 1 b is linear capacitance type micro-wave Power sensor arrangement sectional view.
Figure has: microstrip line 1, cantilever beam anchor district 2, cantilever beam 3, induction electrode 4, including induction electrode metal 41, induction electrode insulating barrier 42, GaAs or Si substrate 5.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is further described.
The linear capacitance type micro-wave power sensor of the present invention, using GaAs or Si material as substrate 5, is provided with microstrip line 1, cantilever beam anchor district 2, cantilever beam 3, induction electrode 4 on substrate 5, and induction electrode 4 is made up of induction electrode metal 41 and induction electrode insulating barrier 42.Cantilever beam anchor district 2 and induction electrode 4 are separately positioned on the both sides of microstrip line, induction electrode metal 41 is arranged above with one layer of induction electrode insulating barrier 42, microstrip line 1 be provided above irregularly shaped cantilever beam 3, one end of cantilever beam 3 is arranged in cantilever beam anchor district 2, and the other end is corresponding unsettled above induction electrode 4.This microwave power detector senses the microwave signal power level of transmission on microstrip line 1 by cantilever beam 3 and produces displacement, the induction electrode 4 being placed into contact with below cantilever beam 3 free end, the capacitance size formed by detecting cantilever beam 3 to contact with induction electrode 4 realizes the measurement of microwave power.But, the cantilever beam shape of rule can make to present non-linear relation between the change of its hand capacity value and the size of microwave power, therefore, by adopting " zip mode " motion contacted between free end and the induction electrode of irregular cantilever beam shape and cantilever beam, linearizing output between hand capacity value and microwave power can be realized.Induction electrode (4) includes the induction electrode metal (41) being arranged on substrate (5) and the induction electrode insulating barrier (42) being located on induction electrode metal (41), adopting " zip mode " motion between free end and the induction electrode (4) of cantilever beam (3), namely the free end of cantilever beam 3 adopts the motion mode progressively contacted with induction electrode 4 by cantilever beam 3 free end top to direction, cantilever beam anchor district 2 with sensing electrode 4.
The processing technology of the linear capacitance type micro-wave power sensor based on MEMS structure of the present invention is completely compatible with standard Si technique or GaAs technique.
The online microwave power detector different from the past based on the linear capacitance type micro-wave power sensor of MEMS structure of the present invention, this structure utilizes the microwave signal of transmission on erose cantilever beam sensing microstrip line the linearisation relation that " zip mode " motion passing through to contact between free end and the induction electrode of cantilever beam realizes between hand capacity value and microwave power.Comparatively speaking, linear capacitance type micro-wave power sensor has following main feature: one, cantilever beam structure is more sensitive to microwave signal, and the bulky capacitor that contacts that cantilever beam sensing microwave signal generation displacement achieves between cantilever beam free end and induction electrode changes, sensitivity therefore can be improved；Two, cantilever beam consumes microwave power hardly；Three, erose cantilever beam structure and " zip mode " motion are capable of the linearisation output between capacitance and microwave power, reduce subsequent process circuit and demarcate test request；Four, the making without special material and completely compatible with Si or GaAs technique of whole microwave power detector.In addition, linear capacitance type micro-wave power sensor is the miniaturization of power sensing device, intellectuality, integrated provides the foundation and guarantee, and provides support for online microwave power of accurately measuring further simultaneously.
Whether distinguish is that the standard of this structure is as follows:
A () is placed on above microstrip line by cantilever beam,
B () cantilever beam adopts irregularly shaped,
" zip mode " motion is adopted between free end and the induction electrode of (c) cantilever beam.
Namely the device meeting three above condition should be regarded as the linear capacitance type micro-wave Power sensor arrangement of the present invention.
The present invention utilizes the microwave power of transmission on microstrip line that the attraction of cantilever beam causes the displacement of beam, by measuring hand capacity size between cantilever beam and induction electrode, it is achieved the microwave power detection of transmission on microstrip line.Linear capacitance type micro-wave power sensor in the application present invention can realize power measurement structure commercial application in integrated circuits.
In the linear capacitance type micro-wave power sensor of the present invention, cantilever beam is suspended on the top sensing microwave power of microstrip line and produces bending, the induction electrode being placed into contact with below cantilever beam free end, the capacitance size formed by detecting cantilever beam to contact with induction electrode realizes the measurement of microwave power.Because the degree of cantilever beam correspondence bending is different from required microwave power level, microwave power is more big, and cantilever beam degree of crook is more big, and corresponding hand capacity is more big.According to the capacitance size that cantilever beam contacts with induction electrode, namely can determine that the size of microwave power.But, due to if the cantilever beam shape of rule, non-linear relation is presented between the change of its hand capacity value and the size of microwave power, this just tests to the demarcation of subsequent process circuit and sensor and brings great inconvenience, therefore, by adopting " zip mode " motion contacted between free end and the induction electrode of irregular cantilever beam shape and cantilever beam, linearizing output between hand capacity value and microwave power can be realized.
Whole technical scheme should be noted that some problems, including: the control of stress in cantilever beam, the erose accurate calculating of cantilever beam and design, cantilever beam length and highly impact on device sensitivity and reflection coefficient, this realizes all having being of great significance for structure and the index of whole sensor.
Claims (2)
1. the linear capacitance type micro-wave power sensor based on MEMS structure, it is characterized in that, this sensor includes substrate (5), on described substrate (5) successively spaced cantilever beam anchor district (2), microstrip line (1), sensing electrode (4), and it is arranged on the cantilever beam (3) of microstrip line (1) top, one end of cantilever beam (3) is connected with cantilever beam anchor district (2), the corresponding unsettled top in induction electrode (4) of the other end；
Induction electrode (4) includes the induction electrode metal (41) being arranged on substrate (5) and the induction electrode insulating barrier (42) being located on induction electrode metal (41), " zip mode " motion is adopted between free end and the induction electrode (4) of cantilever beam (3), adopt between free end and the induction electrode (4) of cantilever beam (3) " zip mode " motion, namely the free end of cantilever beam (3) adopts, with sensing electrode (4), the motion mode progressively contacted with induction electrode (4) by cantilever beam (3) free end top to cantilever beam anchor district (2) direction.
2. the linear capacitance type micro-wave power sensor based on MEMS structure according to claim 1, it is characterised in that described cantilever beam (3) adopts irregularly shaped.
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| CN109709386B (en) * | 2019-01-15 | 2020-10-27 | 南京邮电大学 | Three-channel microwave power sensor |
| CN111044798B (en) * | 2019-12-31 | 2021-10-26 | 东南大学 | MEMS microwave power sensor capable of realizing online self-detection and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| CN102411086A (en) * | 2011-08-11 | 2012-04-11 | 东南大学 | Five-port capacitance type microwave power sensor based on micro mechanical clamped beam |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN203688659U (en) * | 2014-01-08 | 2014-07-02 | 东南大学 | Linear capacitance-type microwave power sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| MY145205A (en) * | 2007-12-28 | 2012-01-13 | Mimos Berhad | Vibratory sensor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1858601A (en) * | 2006-06-09 | 2006-11-08 | 东南大学 | Capacitance microwave power sensor |
| CN102411086A (en) * | 2011-08-11 | 2012-04-11 | 东南大学 | Five-port capacitance type microwave power sensor based on micro mechanical clamped beam |
| CN103278681A (en) * | 2013-05-20 | 2013-09-04 | 东南大学 | Microwave power sensor with multi-cantilever structure |
| CN203688659U (en) * | 2014-01-08 | 2014-07-02 | 东南大学 | Linear capacitance-type microwave power sensor |
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