CN109917182B - Microwave power sensor based on graphene piezoresistive effect - Google Patents
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Abstract
The invention relates to a microwave power sensor based on a graphene piezoresistive effect, which comprises a substrate, a coplanar waveguide transmission line, a mass block, a clamped beam and a graphene piezoresistive block, wherein the substrate is provided with a plurality of coplanar waveguide transmission lines; the middle of the substrate is provided with a coplanar waveguide transmission line, the two sides of the substrate are provided with ground wires, the clamped beam is fixed on the ground wires, and the coplanar waveguide transmission line is positioned below the clamped beam; the mass block is positioned above the clamped beam, and the graphene piezoresistive block is positioned between the coplanar waveguide transmission line and the clamped beam; one end of the graphene piezoresistive block is connected with the current input port through a first transmission line, and the other end of the graphene piezoresistive block is connected with the current output port through a second transmission line. The sensor of the invention utilizes the piezoresistive effect of the graphene, not only greatly improves the sensitivity of the sensor, but also improves the precision of microwave signal detection power and the stability of the system due to the special structure of zero band gap of the graphene, and has the advantages of small volume, convenient integration, simple structure and the like.
Description
Technical Field
The invention belongs to the technical field of microwave power sensors, and particularly relates to a microwave power sensor based on a graphene piezoresistive effect.
Background
In the research of various links such as signal generation, transmission and reception of microwaves, the measurement of microwave power is an indispensable basic test technology. At present, the most common is a microwave power sensor with a clamped beam structure with a horizontal surface, when a microwave signal enters, an electrostatic force is generated to bend the clamped beam, so that capacitance changes, and finally microwave power is obtained. However, the output of the capacitive microwave power sensor is nonlinear, the influence of parasitic capacitance and distributed capacitance on sensitivity and measurement accuracy is large, and a clamped beam structure in the structural design of the existing sensor is not stable enough, the overload resistance is poor, and the sensitivity is not high enough. The conventional power sensor is matched with a clamped beam and a piezoelectric material and detects microwave power through testing voltage change, but the sensitivity and the stability of the sensor are greatly limited because the piezoelectric material used in the power sensor has low induction sensitivity and poor stability under large stress.
Chinese patent CN108594007A (patent application number: CN201810420335.7) discloses a microwave power sensor based on piezoresistive effect of clamped beam, which comprises a high-resistance silicon substrate, a coplanar waveguide transmission line and a clamped beam are arranged on a high-resistance silicon substrate, the coplanar waveguide transmission line comprises a CPW signal line and a CPW ground line, a clamped beam bridge pier is respectively arranged between the CPW ground wire and the CPW signal wire, two ends of the clamped beam are respectively fixed above the CPW signal wire through the clamped beam bridge pier, two ends of the clamped beam are connected with the high-resistance silicon substrate through the clamped beam bridge pier, a metal mass block is arranged right above the CPW signal line and on the upper surface of the clamped beam, diffusion resistors are arranged on the upper surface and the lower surface of the clamped beam, the deformation of the clamped beam causes the surface stress change of the clamped beam when the microwave power sensor works, the value of the diffusion resistor changes, the microwave power value can be directly measured by measuring the voltage change between the nodes by a Wheatstone bridge method. The microwave power sensor of the patent detects microwave power by using the matching of the clamped beam and the piezoelectric material and through testing voltage, but the performance of the microwave power sensor is not perfect because the used diffusion resistor has the problems of low sensitivity, small measurement range, poor stability and the like compared with graphene due to the piezoresistive effect.
Chinese patent No. CN1885047B (patent application No. 200610085330.0) discloses a piezoresistive microwave power sensor which is a structure that a terminal resistor absorbs microwave power to generate heat to generate film stress and measures input microwave power in a piezoresistor mode, wherein the sensor takes a Si substrate (1) as a substrate, and Si is used as a substrate3N4/SiO2The layer is arranged at the bottom of the Si substrate, and SiO is arranged on the Si substrate2Insulating layer of SiO2The insulating layer and the silicon film on the etched Si substrate form a double-layer film structure, the double-layer film structure is provided with a coplanar waveguide, the terminal of the coplanar waveguide is provided with a matching resistor, and the edge of the double-layer film structure is provided with four edges<110>The piezoresistor in the direction is a Wheatstone bridge formed by metal wires through contact metal, and four lead ends of the Wheatstone bridge are respectively connected with the pressure welding blocks. The structure measures the stress change of the film by the piezoresistor arranged at the edge of the double-layer film to obtain the input microwave power. The sensor in the patent also utilizes a voltage dependent resistor, but first absorbs microwave power through a terminal resistor to generate heat to generate film stress, which consumes microwave power, and belongs to a terminal type power sensorThe number cannot be subsequently utilized.
Disclosure of Invention
The invention aims to solve at least one of the problems in the prior art, provides a microwave power sensor based on graphene piezoresistive effect and a method for testing microwave power, and solves the problems of poor stability, low sensitivity, small measurement range and the like of the conventional microwave power sensor.
The implementation mode of the invention is as follows: the microwave power sensor based on the graphene piezoresistive effect comprises a substrate, a coplanar waveguide transmission line, a mass block, a clamped beam and a graphene piezoresistive block; the middle of the substrate is provided with a coplanar waveguide transmission line, the two sides of the substrate are provided with ground wires, the clamped beam is fixed on the ground wires, and the coplanar waveguide transmission line is positioned below the clamped beam; the mass block is positioned above the clamped beam, and the graphene piezoresistive block is positioned between the coplanar waveguide transmission line and the clamped beam; one end of the graphene piezoresistive block is connected with the current input port through a first transmission line, and the other end of the graphene piezoresistive block is connected with the current output port through a second transmission line.
According to the microwave power sensor, the microwave power is tested by utilizing the piezoresistive effect of the graphene piezoresistive block, and the graphene piezoresistive block has a good response characteristic to deformation, so that the sensitivity of the system can be improved; due to the unique zero band gap structure of the graphene, the structure of the graphene is stable, the graphene can stably and repeatedly work, the graphene can stably work for 150 periods within the maximum stress range, and the reliability of a system is improved. And utilize graphite alkene pressure resistance piece to detect microwave signal, belong to online, compare in traditional terminal thermoelectric type microwave power sensor, can not consume the microwave signal completely, can continue advantages such as utilization by follow-up process.
According to the invention, the lower part of the clamped beam is supported by the graphene piezoresistive blocks, so that part of stress of the clamped beam is shared, and compared with the traditional capacitive microwave power sensor, the structure of the beam is more stable, so that the sensor has extremely high structural stability, and the power measurement range of the sensor is greatly expanded. And the clamped beam is supported by the graphene piezoresistive blocks and can be processed into a longer size, so that the sensitivity and the stability of the system can be greatly improved. The allowable dynamic range of the power signal to be detected is large, the output signal is large, the detection is easy, and the method has the advantages of strong overload resistance, large dynamic range and the like.
Preferably, the current input port and the current output port are used for being connected with a voltage source and forming a loop, and the magnitude of the microwave power transmitted on the coplanar waveguide transmission line is calculated by measuring the variation of the current. Compared with other methods, the current testing method is more visual in result observation, the current and the resistance value change of the graphene have a good linear relation, and the microwave power transmitted on the coplanar waveguide transmission line can be obtained by measuring the variable quantity of the current.
Preferably, the mass is a mass made of copper, aluminum, titanium or aluminum. The metal block with high density is adopted, so that the displacement amplitude of the clamped beam is increased, the resonance frequency is reduced, and the high-power microwave detection in the underground poor environment is realized.
Preferably, the clamped beam is a clamped beam made of weakly doped monocrystalline silicon or monocrystalline germanium. The structure has the advantages of high stability, easy realization through micro-machining and the like.
Preferably, the substrate is made of gallium nitride, has high electron mobility, and is suitable for a high-frequency sensor.
Preferably, the microwave power sensor is manufactured by adopting an MEMS planar processing method.
And the MEMS technology is adopted for processing, so that the sensor has the advantages of small volume, high integration level and the like compared with the traditional microwave power sensor.
The invention also discloses a method for testing microwave power by using the microwave power sensor based on the graphene piezoresistive effect, which comprises the following steps: the current input port and the current output port are connected with a voltage source to form a loop, when microwave signals are transmitted to the lower portion of the clamped beam through the coplanar waveguide transmission line, downward electrostatic force is generated on the clamped beam, and then vertical stress is applied to the graphene piezoresistance block, so that the loop current is changed due to the change of the resistance value of the graphene film, different microwave powers correspond to different current variable quantities one by one, and the microwave power can be calculated by measuring the variable quantities of the current.
In summary, the microwave power sensor of the present invention has the following advantages:
(1) the sensor with a simple structure is ingeniously designed and processed by adopting the MEMS process, so that the sensor has the advantages of small volume, high integration level and the like compared with the traditional microwave power sensor;
(2) the invention utilizes the graphene piezoresistive blocks to detect microwave signals, belongs to an on-line type, and compared with the traditional terminal thermoelectric type microwave power sensor, the invention has the advantages that the microwave signals are not completely consumed, the microwave signals can be continuously utilized in the subsequent process, and the like.
(3) Compared with the traditional capacitive microwave power sensor, the structure of the beam is more stable, the allowable dynamic range of the power signal to be detected is large, the output signal is large, the detection is easy, and the microwave power sensor has the advantages of strong overload resistance, large dynamic range and the like.
(4) According to the microwave power sensor, the graphene piezoresistive blocks are used for detecting microwave signals, and the sensitivity of the microwave power sensor is greatly improved by using the piezoresistive effect of the graphene; and due to the unique zero band gap structure of the graphene, the graphene can stably work for 150 periods within the maximum stress range, so that the stability of the system is greatly improved.
Drawings
Fig. 1 is a schematic top view of a microwave power sensor based on graphene piezoresistive effect in example 1;
fig. 2 is a schematic front view of a microwave power sensor based on graphene piezoresistive effect in example 1;
in the figure: 1. a coplanar waveguide transmission line; 2. a ground wire; 3. fixedly supporting the beam; 4. a mass block; 5. a current input port; 6. a current output port; 7. a first transmission line; 8. a second transmission line; 9. graphene piezoresistive blocks.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It is to be understood that the specific drawings described herein are merely illustrative of the invention and are not intended to limit the invention. All other technical solutions obtained by a person skilled in the art without creative efforts based on the specific embodiments of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it is to be noted that the terms "center", "upper", "lower", and "upper" are used for the purpose of describing the present invention,
The directional or positional relationships indicated by "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention. Furthermore, the term "first"),
"second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
As shown in fig. 1-2, the microwave power sensor based on the graphene piezoresistive effect in this embodiment is composed of a substrate, a coplanar waveguide transmission line 1, a ground line 2, a clamped beam 3, a mass block 4, a current input port 5, a current output port 6, a first transmission line 7, a second transmission line 8, and a graphene piezoresistive block 9; a coplanar waveguide transmission line 1 is arranged in the middle of the substrate, ground wires 2 are arranged on two sides of the substrate, a clamped beam 3 is fixed on the ground wires 2, and the coplanar waveguide transmission line 1 is positioned below the clamped beam 3; the mass block 4 is positioned above the clamped beam 3, and the graphene piezoresistive block 9 is positioned between the coplanar waveguide transmission line 1 and the clamped beam 3; one end of the graphene piezoresistive block 9 is connected with the current input port 5 through a first transmission line 7, and the other end of the graphene piezoresistive block 9 is connected with the current output port 6 through a second transmission line 8. The substrate is made of gallium nitride. The microwave power sensor is manufactured by adopting an MEMS plane processing method.
The method for testing the microwave power of the microwave power sensor based on the graphene piezoresistive effect comprises the following steps: the current input port and the current output port are connected with a voltage source to form a loop, when microwave signals are transmitted to the lower portion of the clamped beam through the coplanar waveguide transmission line, downward electrostatic force is generated on the clamped beam, and then vertical stress is applied to the graphene piezoresistance block, so that the loop current is changed due to the fact that the resistance value of the graphene film is changed, different microwave powers correspond to different current variable quantities one by one, and the size of the microwave power can be obtained by measuring the variable quantities of the current.
Compared with the traditional beam structure, the clamped beam has longer processing size due to the support of the graphene piezoresistive blocks, and the graphene piezoresistive blocks can repeatedly and stably work 3500 times through simulation software, so that the sensitivity and the stability of the system can be greatly improved.
The microwave power sensor based on the graphene piezoresistive effect is characterized in that: the input matching is better, the transmission loss is lower, and the CMOS technology is compatible. The coplanar waveguide can be subjected to impedance matching design to improve microwave characteristics, the graphene piezoresistive blocks are used as a supporting structure of the clamped beam to absorb stress and improve sensitivity, and the stability and reliability of the whole system are improved.
The sensor has high stability because the graphene piezoresistive blocks are arranged below the clamped beam for supporting, can measure microwave signals with high power (up to 50W), and has good overload resistance; a higher output signal is provided, and the experiment proves that the high-stability long-term stability is achieved; the variation range of the sensitivity in the X wave band is relatively stable.
The microwave power sensor based on the graphene piezoresistive effect adopts an MEMS (micro electro mechanical systems) plane processing technology, and has the advantages of small volume, high integration level, high sensitivity and the like. In addition, the graphene piezoresistive blocks are used for supporting the clamped beam, so that the power range of the microwave signal to be detected can be greatly improved, the overload resistance is good, and the detection system is protected; and the piezoresistive effect of the graphene piezoresistive blocks is utilized, so that the accuracy of a detection signal and the sensitivity of the system are greatly improved. In summary, the microwave power sensor based on the graphene piezoresistive effect of the embodiment has the advantages of high precision, large measurement range, high sensitivity, high stability and the like.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The microwave power sensor based on the graphene piezoresistive effect is characterized by comprising a substrate, a coplanar waveguide transmission line, a mass block, a clamped beam and a graphene piezoresistive block; the middle of the substrate is provided with a coplanar waveguide transmission line, the two sides of the substrate are provided with ground wires, the clamped beam is fixed on the ground wires, and the coplanar waveguide transmission line is positioned below the clamped beam; the mass block is positioned above the clamped beam, the graphene piezoresistive block is positioned between the coplanar waveguide transmission line and the clamped beam, and the graphene piezoresistive block is supported below the clamped beam; one end of the graphene piezoresistive block is connected with the current input port through a first transmission line, and the other end of the graphene piezoresistive block is connected with the current output port through a second transmission line.
2. The microwave power sensor based on the graphene piezoresistive effect according to claim 1, wherein the current input port and the current output port are used for being connected with a voltage source and forming a loop, and the magnitude of the microwave power transmitted on the coplanar waveguide transmission line is calculated by measuring the variation of the current.
3. The graphene piezoresistive effect-based microwave power sensor according to claim 1, wherein the mass is a metal mass made of copper, nickel or aluminum.
4. The microwave power sensor based on graphene piezoresistive effect according to claim 1, wherein the clamped beam is a weakly doped monocrystalline silicon or monocrystalline germanium clamped beam.
5. The microwave power sensor based on graphene piezoresistive effect according to claim 1, wherein the substrate is made of gallium nitride, has high electron mobility, and is suitable for high frequency.
6. The microwave power sensor based on graphene piezoresistive effect according to claim 1, wherein the microwave power sensor is manufactured by adopting a MEMS planar processing method.
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| CN107268187A (en) * | 2017-07-17 | 2017-10-20 | 南京邮电大学 | A kind of preparation method of PI＆ graphene oxides composite nano-fiber membrane |
| CN108376705A (en) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | Gallium nitride base power device of inverted structure with graphene heat dissipating layer and preparation method thereof |
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| WO2016102689A1 (en) * | 2014-12-23 | 2016-06-30 | Haydale Graphene Industries Plc | Piezoresistive device |
| CN105800605B (en) * | 2016-04-26 | 2019-01-18 | 华东师范大学 | A kind of graphene oxide/graphene bilayer pressure drag film and preparation method |
| CN106787945B (en) * | 2017-02-27 | 2018-09-25 | 重庆大学 | A kind of piezoelectricity-friction electricity combined wide-band miniature energy collector |
| CN107515061A (en) * | 2017-08-14 | 2017-12-26 | 京东方科技集团股份有限公司 | A kind of touch sensor and preparation method thereof |
| CN208092124U (en) * | 2018-04-26 | 2018-11-13 | 南京邮电大学 | The piezoelectric type microwave power detector of d31 based on clamped beam |
| CN108594007B (en) * | 2018-05-04 | 2023-05-23 | 南京邮电大学 | Microwave power sensor based on piezoresistive effect of clamped beam |
| CN208092125U (en) * | 2018-05-04 | 2018-11-13 | 南京邮电大学 | Microwave power detector based on clamped beam piezoresistive effect |
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| CN107268187A (en) * | 2017-07-17 | 2017-10-20 | 南京邮电大学 | A kind of preparation method of PI＆ graphene oxides composite nano-fiber membrane |
| CN108376705A (en) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | Gallium nitride base power device of inverted structure with graphene heat dissipating layer and preparation method thereof |
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Application publication date: 20190621 Assignee: NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS NANTONG INSTITUTE Co.,Ltd. Assignor: NANJING University OF POSTS AND TELECOMMUNICATIONS Contract record no.: X2021980011448 Denomination of invention: Microwave power sensor based on graphene piezoresistive effect Granted publication date: 20210316 License type: Common License Record date: 20211027 |
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