CN105928567B - Silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor and preparation method thereof - Google Patents
Silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor and preparation method thereof Download PDFInfo
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Abstract
Silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor and preparation method thereof, is related to environmental monitoring technology, in order to solves the problems, such as that existing silicon base chip does not integrate gas sensor unit.Multiple gas sensor units, temperature sensitive unit and wet sensitive unit are integrated on a n type single crystal silicon piece by the present invention, the heat-insulated through hole in the second level that cross section is rectangle is provided between two neighboring unit, in each gas sensor unit, it is the trapezoidal heat-insulated through hole of the first order to be provided with cross section between per adjacent two contact conductors, and the rectangle and trapezoidal four angles use arc transition.Said chip can be monitored to the humiture index of environment simultaneously, and can monitor multiple gases, the heat-insulated different operating temperature requirement that disclosure satisfy that different units of two level.It is thermally isolated in hole and sharp angular region is replaced using arc transition, the array chip is had the advantages that good multifunctional measuring, selectivity, high mechanical strength, reliability are high, low in energy consumption, suitable for environmental monitoring.
Description
Technical field
The present invention relates to a kind of silicon substrate gas sensitization array chip.
Background technology
With the continuous acceleration of Urbanization in China, environmental problem turns into one of important content of concern, realizes
There is important science and social effect to city atmospheric environment quality accurate measurements and early warning.At present, urban meteorological environment
Monitoring uses discrete instrument, and its cost is high, volume is big, is not easy to measurement, and can not obtain temperature, humidity simultaneously in real time in situ
Etc. meteorological index.With the fast development of micro-processing technology so that low-power consumption, high performance microsensor turn into a kind of possible.
Occur a small amount of micro-gas sensors on the market in the recent period, but it is only capable of measuring a kind of gas, measurement gas with various will be purchased
The product of different model is put, function is more single, and can not continue to measure during device failure.In gas sensor array side
Face, Chinese invention patent CN104931540A disclose a kind of gas sensor array and preparation method thereof, and it is using single
The gas sensor array of metal oxide semiconductor nano material structure, to improve the selectivity of gas sensor.But its
What is used is still heater-type gas sensor of traditional earthenware for main body, and volume is larger, and power consumption is larger.Chinese invention patent
CN100559176C discloses a kind of gas sensor and its array, and it uses silicon thin film as strain diaphragm, polymer conduct
It gas sensitive, can at normal temperatures work, have the advantages that low in energy consumption, processing compatibility is good.However, using polymer as air-sensitive
The gas sensor sensitivity of material is slightly poor, and stability is bad, it is impossible to meets gas sensor high sensitivity, high stable, Gao Ke
The use demand leaned on, and can not provide temperature, humidity information without integrated temperature, wet sensitive unit wherein.Integrated in multi-parameter
In terms of sensor, existing mode is mainly two kinds：When by the assembling of various sensitive chips closely on the same substrate, its
Advantage is that R＆D costs are low, preparation method is simple, but this integrated sensor interconnection circuit is longer, and volume is relatively large, and nothing
Method is compatible with integrated circuit technology progress；Second, multiple sensors are made on the same chip, realize that single-chip is compound, but mesh
Integrated, the not integrated gas sensor unit that preceding research is mainly concentrated between the sensing units such as temperature, humidity, pressure.At present,
Silicon substrate gas sensitization chip array of integrated temperature and humidity measurement and preparation method thereof has no relevant report.
The content of the invention
The invention aims to solve existing silicon base chip mainly to concentrate on the sensing units such as temperature, humidity, pressure
Between it is integrated, the problem of integrated gas sensor unit, there is provided the silicon substrate gas sensitization core of two kinds of integrated Temperature Humidity Sensors
Piece and preparation method thereof.
The silicon substrate gas sensitization chip of the first integrated Temperature Humidity Sensor of the present invention, multiple air-sensitive lists therein
First, temperature sensitive unit and wet sensitive unit are integrated on N-type (100) monocrystalline silicon piece, and multiple gas sensor units form M × N battle array
Row, M represent the species sum of gas sensitive, and N represents the number of the gas sensor made using every kind of gas sensitive；
It is provided with that through hole is thermally isolated is heat-insulated logical as the second level between multiple gas sensor units, temperature sensitive unit and wet sensitive unit
Hole, the cross section of the heat-insulated through hole in the second level is rectangle, and four angles of the rectangle use arc transition.
The silicon substrate gas sensitization chip of second of the present invention integrated Temperature Humidity Sensor, multiple gas sensor units, temperature
Quick unit and wet sensitive unit are integrated on a n type single crystal silicon piece, and multiple gas sensor units form M × N array, and M represents gas
The species sum of quick material, N represent the number of the gas sensor made using every kind of gas sensitive；
In each gas sensor unit, per two adjacent contact conductors between be provided be thermally isolated through hole as the first order every
Heat through-hole, the cross section of the heat-insulated through hole of the first order is trapezoidal, and four trapezoidal angles use arc transition.
The preparation method of the silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor of the present invention, its detailed process
For：
Step 1: silicon dioxide layer is made on a surface of n type single crystal silicon piece, in the surface system of the silicon dioxide layer
Make silicon nitride medium layer, the silicon dioxide layer forms induction module with silicon nitride medium layer (can play sensing above silicon nitride
One unit of function can be described as an induction module) supporting layer；
Step 2: the adding thermal resistance of multiple gas sensor units and the sensitive electrical of temperature sensitive unit are made above the supporting layer
Resistance, multiple adding thermal resistances form M × N array；
Step 3: in the supporting layer disposed thereon silica or silicon nitride as the first insulating passivation layer, Ran Hou
Etch lead hole on first insulating passivation layer；
Draw Step 4: making the detecting electrode of gas sensor unit above each gas sensor unit adding thermal resistance and heating electrode
Line, while make two electrodes of electric capacity in wet sensitive unit and the pin of adding thermal resistance in temperature sensitive unit, the heating electrode
Lead is connected by fairlead with adding thermal resistance；
Step 5: then deposition silica or silicon nitride are carved as the second insulating passivation layer and remove gas sensitive and wet sensitive
The passivation layer of material adhering zone and electrode and Pin locations；
Step 6: humidity sensing polymer materials dielectric layer is made above wet sensitive unit；
Step 7: corroding to another surface of n type single crystal silicon piece, complete hollow silicon cup, the first order be thermally isolated it is logical
The making of through hole is thermally isolated in hole and the second level, and the position of the hollow silicon cup is corresponding with gas sensor unit, the first order heat
Isolated vias is located between adjacent two leads of each gas sensor unit, and through hole is thermally isolated positioned at adjacent two in the second level
Between sensing unit, through hole cross section is thermally isolated to be trapezoidal in the first order, and it is rectangle that through hole cross section, which is thermally isolated, in the second level, and first
Level is thermally isolated through hole and the second level is thermally isolated four edges and corners of through hole and uses arc transition；
Step 8: in each gas sensor unit disposed thereon gas sensitive, the making of the chip is completed, wherein per N number of gas
Quick unit uses a kind of material, and M × N number of gas sensor unit uses M kind gas sensitives altogether.
It is of the invention compared with traditional heater-type gas sensor, as a result of the micro fabrication based on silicon substrate, therefore have
Have the advantages that small volume, heating power are low, thermoelectric response is fast, can be mass, be good with ic process compatibility.With
Other gas sensors based on silicon substrate are compared, and the invention is to make the array air-sensitive that M × N number of unit is formed on the same substrate
Element, multiple gases can be monitored simultaneously, for the first gas, using Redundancy Design, add the reliability of device；And
Temperature, humidity-monitoring unit are integrated with, the humiture index of environment can be monitored simultaneously.Set in addition using two level is heat-insulated
Meter, significantly reduces hot crosstalk between unit, to meet the different operating temperature requirement of different sensing units.And set two level is heat-insulated
Meter is thermally isolated in hole and replaces sharp angular region using arc transition, make the array chip have multifunctional measuring, it is selectively good,
The advantages that high mechanical strength, reliability are high, low in energy consumption.
Brief description of the drawings
Fig. 1 is the profile of the silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor of the present invention；
Fig. 2 is the top view of the silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor of the present invention, wherein M and N
It is 2；
Fig. 3 is the structural representation of the heat-insulated through hole of the first order；
Fig. 4 is the structural representation of the heat-insulated through hole in the second level.
Embodiment
Embodiment one：Illustrate present embodiment, the collection described in present embodiment with reference to Fig. 1, Fig. 2 and Fig. 4
Into the silicon substrate gas sensitization chip of Temperature Humidity Sensor, multiple gas sensor units, temperature sensitive unit and wet sensitive unit therein are integrated
On N-type (100) monocrystalline silicon piece, multiple gas sensor units form M × N array, and M represents the species sum of gas sensitive, N
Represent the number of gas sensor made using every kind of gas sensitive；
It is provided with that through hole is thermally isolated is heat-insulated logical as the second level between multiple gas sensor units, temperature sensitive unit and wet sensitive unit
Hole, the cross section of the heat-insulated through hole in the second level is rectangle, and four angles of the rectangle use arc transition.
Present embodiment integrates gas sensor unit, temperature sensitive unit and wet sensitive unit on single crystal silicon material, can be simultaneously to environment
Humiture and gas index be monitored；
Temperature sensitive unit is realized using Pt film resistors；
Wet sensitive unit realizes that two electrodes of the electric capacity are the bonding jumper of interdigital, described using interdigitation electric capacity
The surface of electric capacity coats high polymer material as wet sensitive deielectric-coating.
The semiconductor-type gas sensitive chip array for being capable of multiple gases is made using a variety of gas sensitives, can be simultaneously to more
Kind gas is monitored, and lifts device functionality and selectivity；
Using Redundancy Design, every kind of gas sensitive makes multiple gas sensitization chips, increases the reliability of device, and lead to
Measurement of concetration precision can be improved by crossing intellectualized algorithm, and realize fault diagnosis and the data reparation of sensor, for example, for described
Multiple gases in any one gas, there is N number of gas sensor unit to be monitored simultaneously, if N number of gas sensor unit export
Monitor value all fluctuated in a zone of reasonableness, then the average value of N number of monitor value can be taken as final monitoring result
Output, if the monitor value of some gas sensor unit output exceeds described zone of reasonableness, then it is considered that the gas sensor unit goes out
The size of existing failure, the fluctuation situation of the monitor value exported according to the gas sensor unit and the amount beyond the zone of reasonableness, can be with
Determine the fault type of the gas sensor unit；
Set between each sensing unit and through hole is thermally isolated, the hot crosstalk between each unit is reduced, to meet different sensing units
Different operating temperature requirement, to improve measurement accuracy, reduce power consumption, and four angles that through hole cross section is thermally isolated are entered
Row chamfering, to substitute sharp angular region, stress concentration effect is reduced, to improve the mechanical strength of chip.
Embodiment two：Illustrate present embodiment with reference to Fig. 1, Fig. 2 and Fig. 3, present embodiment is to embodiment party
The further restriction of the silicon substrate gas sensitization chip of Temperature Humidity Sensor, in present embodiment, described gas are integrated described in formula one
In quick unit, through hole is thermally isolated as the heat-insulated through hole of the first order per being provided between two adjacent contact conductors, described the
The cross section of the heat-insulated through hole of one-level is trapezoidal, and four trapezoidal angles use arc transition.
Gas sensor unit is the semiconductor-type structure of the micro- heating plate of silicon, mainly micro- heating including hollow silicon cup and formation thereon
Plate sensing unit, micro- heating plate sensing unit are used as supporting layer using silica and silicon nitride, to add above supporting layer
Thermode lead and test electrode, as shown in Fig. 2 heating contact conductor and test electrode are interspersed to be distributed in one substantially in pros
In the region of shape.Heating contact conductor is Pt serpentine resistive bars, and two leads are drawn from the both ends of Pt serpentine resistive bars, and are in
It is diagonal to draw；Test electrode to make using Pt, Au, Al or W, be interdigital structure, two leads are also drawn in diagonal；Four are drawn
Line is located at four angles of square area respectively, and the first order that cross section is isosceles trapezoid is provided between adjacent two leads
Heat-insulated through hole, the attachment structure between four heat-insulated through holes of the first order are the support beam of micro- heating plate sensing unit, the support
The passage that beam is also drawn as electrode simultaneously.The heat-insulated through hole of the first order can reduce thermal losses, and then reduce power consumption.Four isosceles
Trapezoidal size is identical, and four angles of the isosceles trapezoid are provided with chamfering, it is therefore an objective to stress concentration effect is reduced, to carry
The mechanical strength of high gas sensor unit.
Embodiment three：The silicon substrate gas sensitization of integrated Temperature Humidity Sensor described in Fig. 1 to Fig. 4 present embodiments
The detailed process of the preparation method of chip is：
Step 1: silicon dioxide layer is made on a surface of n type single crystal silicon piece, in the surface system of the silicon dioxide layer
Make silicon nitride medium layer, the silicon dioxide layer forms induction module with silicon nitride medium layer (can play sensing above silicon nitride
One unit of function can be described as an induction module) supporting layer；
Step 2: the adding thermal resistance of multiple gas sensor units and the sensitive electrical of temperature sensitive unit are made above the supporting layer
Resistance, multiple adding thermal resistances form M × N array；
Step 3: in the supporting layer disposed thereon silica or silicon nitride as the first insulating passivation layer, Ran Hou
Etch lead hole on first insulating passivation layer；
Draw Step 4: making the detecting electrode of gas sensor unit above each gas sensor unit adding thermal resistance and heating electrode
Line, while make two electrodes of electric capacity in wet sensitive unit and the pin of adding thermal resistance in temperature sensitive unit, the heating electrode
Lead is connected by fairlead with adding thermal resistance；
Step 5: then deposition silica or silicon nitride are carved as the second insulating passivation layer and remove gas sensitive and wet sensitive
The passivation layer of material adhering zone and electrode and Pin locations；
Step 6: humidity sensing polymer materials dielectric layer is made above wet sensitive unit；
Step 7: corroding to another surface of n type single crystal silicon piece, complete hollow silicon cup, the first order be thermally isolated it is logical
The making of through hole is thermally isolated in hole and the second level, and the position of the hollow silicon cup is corresponding with gas sensor unit, the first order heat
Isolated vias is located between adjacent two leads of each gas sensor unit, and through hole is thermally isolated positioned at adjacent two in the second level
Between sensing unit, through hole cross section is thermally isolated to be trapezoidal in the first order, and it is rectangle that through hole cross section, which is thermally isolated, in the second level, and first
Level is thermally isolated through hole and the second level is thermally isolated four edges and corners of through hole and uses arc transition；
Step 8: in each gas sensor unit disposed thereon gas sensitive, the making of the chip is completed, wherein per N number of gas
Quick unit uses a kind of material, and M × N number of gas sensor unit uses M kind gas sensitives altogether.
Using the above method make chip structure as depicted in figs. 1 and 2.The above method is on a n type single crystal silicon piece
Be integrated with temperature sensitive unit and wet sensitive unit and multiple gas sensor units, and made the first order be thermally isolated through hole and second level heat every
From through hole.
The sensitive resistance of temperature sensitive unit is made using Pt (or Cr) film resistor, and the adding thermal resistance of gas sensor unit uses Pt
(or Cr) adding thermal resistance, and Pt film resistors synchronously complete with Pt adding thermal resistances, by backing material (silicon nitride)
And the hot property matching (being primarily referred to as thermal stress matching) of surface insulation passivation layer so that strain is cancelled out each other, and can improve heating
Reliability, repeatability and the stability of resistance.
Furthermore it is also possible to silicon dioxide layer is also made on another surface of n type single crystal silicon piece, and in the silicon dioxide layer
Surface make silicon nitride medium layer, the silicon dioxide layer and the silicon nitride medium layer can increase the mechanical strength of chip, and
Make the electrical property of chip not by external interference, improve the stability and reliability of chip.
Embodiment four：Fig. 1 includes 2 to Fig. 4 present embodiments using the making of the method described in embodiment one
The chip of × 2 gas sensor units, detailed process are：
Step 1: throwing silicon chip 1 from N-type (100) is double, after being cleaned using standard cleaning liquid, thermal oxide, shape are carried out to silicon chip
Into silicon dioxide layer 2, redeposited silicon nitride medium layer 3, the supporting layer of sensing module is formed；
Step 2: making Cr/Pt films above the supporting layer, carved using dry etching and remove unnecessary metallic film,
Complete the making of gas sensor unit adding thermal resistance 4 and temperature sensitive unit sensitive resistance 5；
Step 3: deposition silica makes translucent first insulating passivation layer 6, and carved using dry process and remove lead
The passivation layer of hole site；
Step 4: Cr/Au metal interdigital electrodes are made directly over each gas sensor unit, the detection electricity as gas sensor unit
The pin 9 of pole 7, two electrodes 8 of wet sensitive cell capaciator and the platinum adding thermal resistance of temperature sensitive unit also makes simultaneously in the step
Complete；
Step 5: deposition silica makes the second insulating passivation layer 10, carved using dry process except gas sensitive and wet
Second insulating passivation layer 10 of quick material corresponding region and electrode pin position, ensures the extraction of detecting electrode；
Step 6: the surface of electric capacity makes humidity sensing polymer materials dielectric layer 11 in wet sensitive unit；
Step 7: corroding to silicon chip back side, hollow silicon cup 12 is completed, through hole 13 and the second level is thermally isolated in the first order
The making of through hole 14 is thermally isolated；
Step 8: it (is to add below the first insulating passivation layer that two kinds of gas sensitives, which are sprayed in the micro- heating plate of 2 × 2 gases,
Thermal resistance, therefore, the first insulating passivation layer and the second insulating passivation layer are equivalent to micro- heating plate) detecting electrode surface, formed
Gas sensitization dielectric layer 15, complete the making of chip.
Claims (2)
1. the preparation method of the silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor, it is characterised in that this method detailed process
For：
Step 1: making silicon dioxide layer on a surface of n type single crystal silicon piece, nitrogen is made on the surface of the silicon dioxide layer
SiClx dielectric layer, the silicon dioxide layer form supporting layer with silicon nitride medium layer；
Step 2: the adding thermal resistance of multiple gas sensor units and the sensitive resistance of temperature sensitive unit are made above the supporting layer, it is more
Individual adding thermal resistance forms M × N array；
Step 3: in the supporting layer disposed thereon silica or silicon nitride as the first insulating passivation layer, then described
Etch lead hole on first insulating passivation layer；
Step 4: the detecting electrode and heating contact conductor of gas sensor unit are made above each gas sensor unit adding thermal resistance, together
When make two electrodes of electric capacity and the pin of adding thermal resistance in temperature sensitive unit in wet sensitive unit, the heating contact conductor leads to
Fairlead is crossed with adding thermal resistance to be connected；
Step 5: then deposition silica or silicon nitride are carved as the second insulating passivation layer and remove gas sensitive and humidity-sensitive material
The passivation layer of adhering zone and electrode and Pin locations；
Step 6: humidity sensing polymer materials dielectric layer is made above wet sensitive unit；
Step 7: corroding to another surface of n type single crystal silicon piece, complete hollow silicon cup, the first order be thermally isolated through hole with
And the making of through hole is thermally isolated in the second level, the position of the hollow silicon cup is corresponding with gas sensor unit, and the first order is thermally isolated
Through hole is located between adjacent two leads of each gas sensor unit, and the second level is thermally isolated through hole and is located at two adjacent sensitivities
Between unit, through hole cross section is thermally isolated to be trapezoidal in the first order, and it is rectangle that through hole cross section, which is thermally isolated, in the second level, and the first order is hot
Four edges and corners that through hole is thermally isolated in isolated vias and the second level use arc transition；
Step 8: in each gas sensor unit disposed thereon gas sensitive, the making of the chip is completed, wherein per N number of air-sensitive list
Member uses a kind of material, and M × N number of gas sensor unit uses M kind gas sensitives altogether.
2. the preparation method of the silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor according to claim 1, its feature
It is, in step 1, silicon dioxide layer is also made on another surface of n type single crystal silicon piece, and in the table of the silicon dioxide layer
Face makes silicon nitride medium layer.
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| CN106802310A (en) * | 2017-01-19 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of single chip integrated MEMS gas sensors |
| CN107064222B (en) * | 2017-05-04 | 2024-04-19 | 潍坊歌尔微电子有限公司 | Gas sensor and processing method thereof |
| CN107356637A (en) * | 2017-06-09 | 2017-11-17 | 上海申矽凌微电子科技有限公司 | The manufacture method of environmental sensor and the environmental sensor manufactured using this method |
| CN107607152B (en) * | 2017-07-18 | 2020-05-15 | 上海申矽凌微电子科技有限公司 | Method for manufacturing sensor and sensor |
| CN108217575A (en) * | 2017-12-11 | 2018-06-29 | 华南师范大学 | A kind of sensor and preparation method thereof |
| CN110161084B (en) * | 2018-02-13 | 2022-07-22 | 中国石油化工股份有限公司 | Micro-sensing chip, preparation method thereof, gas detection method and application |
| CN109613085A (en) * | 2018-12-12 | 2019-04-12 | 中国电子科技集团公司第四十九研究所 | One kind being based on the gas sensitization chip array and preparation method thereof of [111] monocrystalline silicon |
| CN109613086A (en) * | 2018-12-13 | 2019-04-12 | 中国电子科技集团公司第四十九研究所 | Gas sensitization chip and preparation method thereof |
| CN110006549B (en) * | 2019-03-27 | 2021-07-06 | 电子科技大学 | Flexible temperature and humidity sensor with integrated structure and preparation method thereof |
| CN112858394B (en) * | 2020-12-31 | 2022-12-23 | 广州奥松电子股份有限公司 | Temperature and humidity compensation method and detection device of detection system |
| WO2023208207A1 (en) * | 2022-04-29 | 2023-11-02 | 清华大学 | Multi-mode sensing micro-system integration device based on conductive holes and manufacturing method therefor |
| CN114852948B (en) * | 2022-04-29 | 2024-04-02 | 清华大学 | MEMS sensor integrated device based on through silicon via and manufacturing method thereof |
| CN114910101B (en) * | 2022-04-29 | 2024-04-23 | 清华大学 | Wafer-level integration method of multi-mode thin film sensor and electronic product |
| CN115092880A (en) * | 2022-06-22 | 2022-09-23 | 无锡惠贻华普微电子有限公司 | Combined multifunctional sensor integration method and system |
| CN115112743B (en) * | 2022-07-06 | 2023-08-25 | 上海交通大学 | Gas and biological molecule sensing chip based on organic transistor microarray |
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| GR1004106B (en) * | 2002-01-24 | 2003-01-13 | Εκεφε "Δημοκριτος" Ινστιτουτο Μικροηλεκτρονικης | Low power silicon thermal sensors and microfluidic devices based on the use of porous silicon sealed air cavity technology or microchannel technology |
| JP2005003472A (en) * | 2003-06-11 | 2005-01-06 | Osaka Gas Co Ltd | Method of manufacturing thin film gas sensor |
| CN102998479B (en) * | 2012-12-31 | 2014-08-13 | 哈尔滨理工大学 | Two-dimensional wind speed and wind direction sensor of aluminum nitride based integrated array structure and manufacture method of sensor |
| CN204479545U (en) * | 2014-12-17 | 2015-07-15 | 哈尔滨理工大学 | A kind of nichrome film heating humiture self compensation gas integrated sensor |
| CN104374886B (en) * | 2014-12-17 | 2016-08-17 | 哈尔滨理工大学 | One oozes B quasiconductor heating humiture self compensation gas integrated sensor |
| CN104698039A (en) * | 2015-03-26 | 2015-06-10 | 哈尔滨理工大学 | AlN ceramic substrate thermal insulation structure four-unit array gas sensor and manufacturing method thereof |
| CN205785343U (en) * | 2016-07-13 | 2016-12-07 | 中国电子科技集团公司第四十九研究所 | The silica-based gas sensitization chip of integrated Temperature Humidity Sensor |
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