CN108217575A - A kind of sensor and preparation method thereof - Google Patents
A kind of sensor and preparation method thereof Download PDFInfo
- Publication number
- CN108217575A CN108217575A CN201711305897.9A CN201711305897A CN108217575A CN 108217575 A CN108217575 A CN 108217575A CN 201711305897 A CN201711305897 A CN 201711305897A CN 108217575 A CN108217575 A CN 108217575A
- Authority
- CN
- China
- Prior art keywords
- electrode
- sensor
- lower electrode
- projection
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000011540 sensing material Substances 0.000 claims abstract description 33
- 239000007772 electrode material Substances 0.000 claims abstract description 4
- 238000007641 inkjet printing Methods 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 241000209094 Oryza Species 0.000 claims 2
- 235000007164 Oryza sativa Nutrition 0.000 claims 2
- 235000009566 rice Nutrition 0.000 claims 2
- 238000005259 measurement Methods 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00841—Cleaning during or after manufacture
- B81C1/00849—Cleaning during or after manufacture during manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
Abstract
The invention discloses a kind of sensor, including substrate, at least one lower electrode, at least one middle electrode and at least one top electrode；Lower electrode is set to surface, middle electrode, top electrode are set to the top of descended electrode and lower electrode, middle electrode, top electrode are respectively arranged in the Different Plane being mutually parallel in space, the projecting of the lower electrode of sensor, the projection of middle electrode and the projection of top electrode intersect at projection crosspoint to form at least one microbridge, sensor further includes the sensing material contacted with middle electrode, and sensing material is set in projection crosspoint；The invention also discloses a kind of preparation methods of sensor.Sensor of the invention is type polar distance variable capacitance formula sensor, and at least one differential microbridge, realizes highly sensitive sensing measurement, nonlinear error reduction.In addition, a kind of preparation method of sensor of the present invention, for making the sensor, preparation method is simple.
Description
Technical field
The present invention relates to sensor field, especially a kind of sensor and preparation method thereof.
Background technology
Today's society Automation of Manufacturing Process constantly expands to every field, and the single sensor of function cannot meet
The growing measurement demand of people, can not meet the needs of automatical measure and control system.When marching toward industry 4.0 with the mankind
In generation, sensor miniaturization, intelligence and standardization are trends of the times, reduce sensor bulk and weight, improve sensitivity, are resisted
Interference with it is multi-functional into for people's lives in social production to an urgent demand of sensor.Due to condenser type in numerous sensors
Sensor structure is simple, cheap, high sensitivity, zero magnetic hysteresis, vacuum compatibility, overload capacity is strong, dynamic response characteristic it is good with
To high temperature, radiation, the strong mal-conditions such as shake adaptable, the advantages that realizing non-cpntact measurement, so as to be used widely.
But condenser type Multifunction Sensor majority belongs to dielectric constant variable type, and one layer of sensing material is coated on substrate
Realize sensing, sensitivity is poor, while will appear in measurement process since tested gas or other impurities are attached on substrate
Lead to measurement noise caused by change in dielectric constant, accuracy is low.
Invention content
In order to solve the above-mentioned technical problem, the object of the present invention is to provide a kind of sensor and preparation method thereof, for carrying
The sensitivity of high sensor and accuracy.
The technical solution adopted in the present invention is：A kind of sensor, including substrate, the sensor further includes at least one
Lower electrode, at least one middle electrode and at least one top electrode；The lower electrode is set to surface, the middle electrode, on
Electrode is set to the top of the lower electrode and the lower electrode, middle electrode, top electrode are respectively arranged in space and are mutually parallel
Different Plane on, the projecting of the lower electrode of the sensor, the projection of middle electrode and the projection of top electrode intersect at projection
For crosspoint to form at least one microbridge, the sensor further includes the sensing material contacted with middle electrode, the sensing material
It is set in projection crosspoint.
Further, the orthographic projection phase of the orthographic projection of the lower electrode of the sensor, the orthographic projection of middle electrode and top electrode
Meet at projection crosspoint.
Further, orthographic projection, the orthographic projection of middle electrode and the orthographic projection of top electrode of the lower electrode of the sensor are hung down
Directly intersect at projection crosspoint.
Further, the lower electrode, middle electrode, top electrode material be nano silver material.
Further, the thickness of the sensing material is 2-3 μm.
Further, the sensing material includes acetylbutyrylcellulose, Nanometer Copper functional composite material or paraffinic base work(
It can composite material.
Further, the substrate is pet substrate.
Further, the thickness of the middle electrode is 2 μm, and width is 80 μm, length 2mm.
Further, the thickness of the top electrode is 2 μm, and width is 65 μm, and length is 1888 μm.
Another technical solution of the present invention is：A kind of preparation method of sensor, applied to the sensor,
Include the following steps：
S1, cleaning simultaneously dry up substrate, heat the substrate；
S2, it is heated after carrying out oxygen plasma treatment to the surface of the substrate；
S3, on the substrate, Nano silver solution using inkjet printing technology printed to heat after obtaining lower electrode；
S4, it photoresist and propylene glycol methyl ether acetate is carried out to mixed preparing obtains preparing solution, along the lower electrode,
It is heated after using inkjet printing technology, the preparation solution is printed upon above the lower electrode；
S5, the edge direction vertical with the lower electrode, using inkjet printing technology by the Nano silver solution in the light
It is printed to be heated after obtaining middle electrode in photoresist；
S6, sensing material is printed upon on the overlapping region of the middle electrode and the photoresist using inkjet printing technology
After heated；
S7, along the lower electrode, the preparation solution is printed upon on the sensing material using inkjet printing technology
After heated；
S8, will to obtain top electrode on the Nano silver solution substrate that is printed upon that treated using inkjet printing technology laggard
Row heating；
S9, photoresist is removed using developer solution.
The beneficial effects of the invention are as follows：
A kind of sensor of the present invention including substrate, at least one lower electrode, at least one middle electrode and at least one powers on
Pole；Lower electrode is set to surface, and middle electrode, top electrode are set to the top of descended electrode and lower electrode, middle electrode, power on
Pole is respectively arranged in the Different Plane being mutually parallel in space, the projecting of the lower electrode of sensor, the projection of middle electrode and
The projection of top electrode intersects at projection crosspoint to form at least one microbridge, and sensor further includes the sensing contacted with middle electrode
Material, sensing material are set in projection crosspoint.Sensor of the invention is type polar distance variable capacitance formula sensor, and is had
At least one differential microbridge realizes highly sensitive sensing measurement, nonlinear error reduction.
In addition, the present invention also provides a kind of preparation method of sensor, for making the sensor, preparation method letter
It is single.
Description of the drawings
The specific embodiment of the present invention is described further below in conjunction with the accompanying drawings：
Fig. 1 is an a kind of specific embodiment schematic diagram of sensor of the present invention；
Fig. 2 is an a kind of specific embodiment sectional view of the microbridge of sensor of the present invention；
Fig. 3 is an a kind of specific embodiment stereoscopic schematic diagram of the microbridge of sensor of the present invention；
Wherein, 1-PET substrates；Electrode under 2-；Electrode in 3-；4- top electrodes；5- sensing materials；A- microbridges.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.
A kind of sensor, including substrate, at least one lower electrode, at least one middle electrode and at least one top electrode；Under
Electrode is set to surface, and middle electrode, top electrode are set to the top of lower electrode and lower electrode, middle electrode, top electrode difference
It is set in the Different Plane being mutually parallel in space, the projecting of the lower electrode of sensor, the projection of middle electrode and top electrode
Projection intersect at projection crosspoint to form at least one microbridge, sensor further includes the sensing material contacted with middle electrode,
Sensing material is set in projection crosspoint.
Sensor of the invention is using type polar distance variable difference structure, wherein descend electrode and power on extremely fixed electrode,
Sensing material and the contact of middle electrode, sensing material occur swollen because being measured (i.e. measurand, such as humidity, temperature) change
Electrode bends during swollen or polycondensation drives, and changes its pole span with upper and lower electrode so as to cause capacitance variations, realizes sensing inspection
It surveys, therefore, middle electrode is movable electrode；And since at least one differential microbridge, multiple differential microbridges are carried out at the same time biography
Sense detects, then microbridge parallel-connection structure of the invention has unrivaled relative to existing monopole type polar distance variable capacitance formula sensor
Sensitivity, nonlinearity erron reduce.
As being further improved for technical solution, the orthographic projection of the lower electrode of sensor, the orthographic projection of middle electrode and power on
The orthographic projection of pole intersects at projection crosspoint, i.e. top electrode, middle electrode is spatially parallel with lower electrode and in orthographic projection direction
On intersection point, the intersection point be form sensor micro-bridge structure, for sensing detection.Further, with reference to figure 1, Fig. 2 and figure
3, Fig. 1 be an a kind of specific embodiment schematic diagram of sensor of the present invention；Fig. 2 is an a kind of tool of the microbridge of sensor of the present invention
Body embodiment sectional view；Fig. 3 is an a kind of specific embodiment stereoscopic schematic diagram of the microbridge of sensor of the present invention；Wherein, substrate
It is surface size for 2mm*2mm, thickness is 100 μm of pet substrate 1；In Fig. 1, outer rim is pet substrate 1, and horizontal line represents sensing
The middle electrode 3 of device, vertical line are the lower electrode 2 and top electrode 4 overlapped, and horizontal line and vertical line in Fig. 1 are crossed to form projection crosspoint,
That is microbridge A, Fig. 1 include in the lower electrodes 2 of eight row, ten rows 3 and eight row top electrode 4 of electrode and formed 80 microbridge A (edge
Except intersection point)；Fig. 2 and Fig. 3 illustrates that the schematic construction of microbridge A in Fig. 1, and sensing material 5 is arranged on the top of middle electrode 3,
In fact, sensing material 5 can also be arranged on the lower section of middle electrode 3, if sensing material 5 be arranged in projection crosspoint and with
Middle electrode 3 contacts.In fact, left and right sides of the middle electrode 3 across pet substrate 1, top electrode 4 and lower electrode 2 are across PE substrates
1 upper and lower sides.In addition, in the present embodiment, the orthographic projection of the lower electrode 2 of sensor, the orthographic projection of middle electrode 3 and top electrode 4
Orthographic projection is vertically intersected on projection crosspoint.Lower electrode 2, middle electrode 3, top electrode 4 material be nano silver material.Lower electrode 2
Thickness for 200nm, width is 65 μm, and length is 1880 μm；The thickness of middle electrode 3 is 2 μm, and width is 80 μm, and length is
2mm；The thickness of top electrode 4 is 2 μm, and width is 65 μm, and length is 1888 μm.The thickness of sensing material 5 is 2-3 μm.Further
Acetylbutyrylcellulose, Nanometer Copper functional composite material or paraffin base functional composite material may be used in ground, sensing material 5.
With reference to figure 1, different sensing materials can be printed in different microbridge A, realize the measurement of multiple physical quantitys.It can be with
Producing micron-sized micro-bridge structure as shown in Figure 2 as much as possible in pet substrate, this is the least unit of sensing,
The quantity of microbridge A is more in unit area, and compared to other type polar distance variable sensors, the sensitivity of sensor is higher.Secondly, middle electricity
The lead of pole can be drawn from the left or right side of substrate, and the lead of upper and lower electrode can draw from substrate the upper side and lower side respectively
Go out, be conducive to subsequent sensor test using vertical parallel.
A kind of preparation method of sensor, applied to the sensor, includes the following steps：
S1, cleaning simultaneously dry up substrate, heat the substrate.
Successively with acetone, isopropanol and deionized water continuous dipping substrate 10 minutes, and dried up with nitrogen.
140 degrees Celsius are heated to the substrate hot plate again, continues 30 minutes.
S2, it is heated after carrying out oxygen plasma treatment to the surface of substrate.
To treated, substrate surface carries out power as 50W, and frequency is the oxygen plasma treatment of 13.56MHz, continues 35
Second, this is the wetability in order to enhance substrate surface, improves the hydrophily of substrate, and the solution for preventing from subsequently adding in is in substrate surface
It flows everywhere, solution is allowed to be adhered to substrate surface, be conducive to precisely make electrode structure.Treated substrate puts into oven with
120 degrees Celsius are toasted 5 minutes, this is to cause to print to prevent marking ink from stretching in substrate while maintaining substrate wetability
Line it is too wide.
S3, on substrate, Nano silver solution is printed to heat after obtaining lower electrode using inkjet printing technology.
It it is 40 μm using inkjet printing setting ink-jet point spacing, the printing number of plies is 2 layers, by the nano silver that solid content is 20%
Lower electrode is used as on slurry (i.e. Nano silver solution) is printed upon that treated substrate.
It puts oven into gained sample to toast 30 minutes with 140 degrees Celsius, lower electrode is allowed to cure.
S4, by photoresist and propylene glycol methyl ether acetate using mass ratio as 1:9 progress mixed preparings obtain preparing solution, edge
Electrode down, will be prepared after solution is printed upon above lower electrode and heated using inkjet printing technology.
Since photoresist directly cannot directly be sprayed with inkjet printing, for convenience using inkjet printing technology to sensor
It is processed, by photoresist and propylene glycol methyl ether acetate using mass ratio as 1:9 carry out being sufficiently mixed preparation injection Inkjet Cartridge, profit
It is 20 μm with inkjet printing setting ink-jet point spacing, nozzle temperature is 55 degree, and excitation speed and frequency are respectively 9m/s and 7kHz,
It is 2 layers to print the number of plies, will prepare solution and gained sample is printed along lower electrode path, formed lower electrode and middle electrode it
Between interval, in subsequent step the photoresist of sensor remove after so as to form the gap of capacitance structure, such as Fig. 2 and Fig. 3
It is shown.It is put into 115 degrees Celsius of hot plate to gained sample to heat 10 minutes, cures photoresist.
S5, the edge direction vertical with lower electrode, are beaten Nano silver solution using inkjet printing technology on a photoresist
Print is heated after obtaining middle electrode.
By above-mentioned nanometer silver paste using 20 μm of inkjet printing setting ink-jet point spacing, printed along the direction vertical with lower electrode
Electrode in 6 layers of conduct often prints in one layer and will heat sample 30 minutes with 115 degrees Celsius of hot plate after electrode, this is
The nanometer silver paste of the top is flowed down along photoresist wall in order to prevent, can cause the micro-bridge structure of middle electrode excessively fragile in this way.
S6, added after using inkjet printing technology, sensing material is printed upon on the overlapping region of middle electrode and photoresist
Heat.
Sensing material is for example measured using inkjet printing humidity acetylbutyrylcellulose be printed upon the middle electrode with
The overlapping region of photoresist is (in addition, sensing material can also change to send out by sensing material in middle base part because being measured
Electrode bending during raw expansion or polycondensation drive, changes its pole span with upper/lower electrode so as to cause capacitance variations), and according to sensing
Device is placed on hot plate and is heated 30 minutes with 110 degree by material character.Sensing material can also be the expanded by heating for thermometric
Nanometer Copper/paraffin base functional composite material and other functional materials.
S7, along lower electrode, will be prepared after solution is printed upon on sensing material and heated using inkjet printing technology.
By photoresist and propylene glycol methyl ether acetate using mass ratio as 1:9 carry out being sufficiently mixed preparation, utilize inkjet printing
It is 20 μm to set ink-jet point spacing, and nozzle temperature is 55 degree, and it is respectively 9m/s and 7kHz to encourage speed and frequency, and the printing number of plies is
2 layers, solution will be prepared, gained sample is printed along lower electrode path, the gap in formation between electrode and top electrode.
It is put into 115 degrees Celsius of hot plate to gained sample to heat 10 minutes, cures photoresist.
S8, added after obtaining top electrode on the Nano silver solution substrate that is printed upon that treated using inkjet printing technology
Heat.
It it is 40 μm using inkjet printing setting ink-jet point spacing, the printing number of plies is 2 layers, by the nano silver that solid content is 20%
As top electrode on slurry is printed upon that treated substrate.Oven is put into gained sample to toast 30 minutes with 140 degrees Celsius.
S9, photoresist is removed using developer solution.
Completely cut off electrode using photoresist, photoresist is removed again after being heating and curing.
The photoresist in gained sample is removed using developer solution, the making of the difference structure of sensor is completed, that is, is formed such as
Include the capacitive sensor structure of top electrode, lower electrode and middle electrode shown in Fig. 2.
It is that the preferable of the present invention is implemented to be illustrated, but the invention is not limited to the implementation above
Example, those skilled in the art can also make various equivalent variations under the premise of without prejudice to spirit of the invention or replace
It changes, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (10)
1. a kind of sensor, including substrate, which is characterized in that the sensor further includes at least one lower electrode, at least one
Middle electrode and at least one top electrode；The lower electrode is set to surface, the middle electrode, top electrode be set to it is described under
The top of the electrode and lower electrode, middle electrode, top electrode are respectively arranged in the Different Plane being mutually parallel in space, institute
It states the projecting of the lower electrode of sensor, the projection of middle electrode and the projection of top electrode and intersects at projection crosspoint to form at least one
A microbridge, the sensor further include the sensing material contacted with middle electrode, and the sensing material is set in projection crosspoint.
2. sensor according to claim 1, which is characterized in that the orthographic projection of the lower electrode of the sensor, middle electrode
Orthographic projection and the orthographic projection of top electrode intersect at projection crosspoint.
3. sensor according to claim 1, which is characterized in that the orthographic projection of the lower electrode of the sensor, middle electrode
Orthographic projection and the orthographic projection of top electrode be vertically intersected on projection crosspoint.
4. sensor according to claim 1, which is characterized in that the lower electrode, middle electrode, top electrode material to receive
Rice ag material.
5. sensor according to claim 1, which is characterized in that the thickness of the sensing material is 2-3 μm.
6. sensor according to claim 1, which is characterized in that the sensing material includes acetylbutyrylcellulose, receives
Rice copper functional composite material or paraffin base functional composite material.
7. sensor according to any one of claims 1 to 6, which is characterized in that the substrate is pet substrate.
8. sensor according to any one of claims 1 to 6, which is characterized in that the thickness of the middle electrode is 2 μm, wide
It is 80 μm to spend, length 2mm.
9. sensor according to any one of claims 1 to 6, which is characterized in that the thickness of the top electrode is 2 μm, wide
It is 65 μm to spend, and length is 1888 μm.
10. a kind of preparation method of sensor, applied to claim 1 to 9 any one of them sensor, which is characterized in that
Include the following steps：
S1, cleaning simultaneously dry up substrate, heat the substrate；
S2, it is heated after carrying out oxygen plasma treatment to the surface of the substrate；
S3, on the substrate, Nano silver solution using inkjet printing technology printed to heat after obtaining lower electrode；
S4, photoresist and propylene glycol methyl ether acetate progress mixed preparing are obtained preparing solution, along the lower electrode, is utilized
Inkjet printing technology heats after the preparation solution is printed upon above the lower electrode；
S5, the edge direction vertical with the lower electrode, using inkjet printing technology by the Nano silver solution in the photoresist
On printed to be heated after obtaining middle electrode；
S6, using inkjet printing technology by sensing material be printed upon the middle electrode with it is laggard on the overlapping region of the photoresist
Row heating；
S7, along the lower electrode, the preparation solution is printed upon using inkjet printing technology laggard on the sensing material
Row heating；
S8, added after obtaining top electrode on the Nano silver solution substrate that is printed upon that treated using inkjet printing technology
Heat；
S9, photoresist is removed using developer solution.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711305897.9A CN108217575A (en) | 2017-12-11 | 2017-12-11 | A kind of sensor and preparation method thereof |
| PCT/CN2018/109628 WO2019114390A1 (en) | 2017-12-11 | 2018-10-10 | Sensor, and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711305897.9A CN108217575A (en) | 2017-12-11 | 2017-12-11 | A kind of sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108217575A true CN108217575A (en) | 2018-06-29 |
Family
ID=62654056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711305897.9A Pending CN108217575A (en) | 2017-12-11 | 2017-12-11 | A kind of sensor and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108217575A (en) |
| WO (1) | WO2019114390A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019114390A1 (en) * | 2017-12-11 | 2019-06-20 | 华南师范大学 | Sensor, and manufacturing method thereof |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484020A (en) * | 2002-07-29 | 2004-03-24 | ��ʽ�����ɽ | Electrostatic capacitive sensor |
| CN1847857A (en) * | 2005-04-15 | 2006-10-18 | 威海双丰电子集团有限公司 | Capacitor MEMS acceleration sensor |
| CN102507688A (en) * | 2011-10-13 | 2012-06-20 | 中国科学院化学研究所 | Electrochemical biological sensor and preparation method and application thereof |
| CN102841109A (en) * | 2012-08-28 | 2012-12-26 | 浙江工业大学 | Device for testing thermal expansion properties of novel nano thermo-sensitive composite material |
| CN103076370A (en) * | 2012-12-28 | 2013-05-01 | 武汉纺织大学 | Flexible sensor capable of detecting ammonia at normal temperature and preparation method thereof |
| WO2014114148A1 (en) * | 2013-01-25 | 2014-07-31 | 深圳市汇顶科技股份有限公司 | Single-layer capacitive touch sensor and touch control terminal |
| CN104555882A (en) * | 2013-10-10 | 2015-04-29 | 原相科技股份有限公司 | Micro-electro-mechanical element and micro-electro-mechanical compensation structure |
| JP2015233030A (en) * | 2014-06-09 | 2015-12-24 | 株式会社リコー | Method for manufacturing electromechanical conversion film, method for manufacturing electromechanical conversion device, liquid discharge head, ink-jet printer, deflection mirror, acceleration sensor, hdd head fine controller, ferroelectric memory device, angular rate sensor, micropump and microvalve |
| US20160231849A1 (en) * | 2013-06-23 | 2016-08-11 | Nissha Printing Co., Ltd. | Touch panel having press detection function |
| CN105928567A (en) * | 2016-07-13 | 2016-09-07 | 中国电子科技集团公司第四十九研究所 | Silicon-based gas sensitive chip of integrated humiture sensor and manufacturing method thereof |
| CN106017718A (en) * | 2016-07-28 | 2016-10-12 | 国网山西省电力公司忻州供电公司 | Flexible temperature sensor |
| CN106046216A (en) * | 2016-07-07 | 2016-10-26 | 广州海谷电子科技有限公司 | High-temperature-resistant and high-humidity humidity-sensitive polymer, method for preparing same and capacitive sensor prepared on basis of high-temperature-resistant and high-humidity humidity-sensitive polymer |
| CN207688895U (en) * | 2017-12-11 | 2018-08-03 | 深圳市国华光电科技有限公司 | A kind of sensor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236096B1 (en) * | 1998-10-06 | 2001-05-22 | National Science Council Of Republic Of China | Structure of a three-electrode capacitive pressure sensor |
| CN101187674A (en) * | 2007-12-14 | 2008-05-28 | 紫光通讯科技有限公司 | Differential capacitance type micromechanical accelerometer |
| CN102156202A (en) * | 2011-03-07 | 2011-08-17 | 东南大学 | Fixing structure for electrode pad |
| CN105865324B (en) * | 2016-05-12 | 2019-02-01 | 全普光电科技(上海)有限公司 | Capacitive sensing apparatus |
| CN108217575A (en) * | 2017-12-11 | 2018-06-29 | 华南师范大学 | A kind of sensor and preparation method thereof |
-
2017
- 2017-12-11 CN CN201711305897.9A patent/CN108217575A/en active Pending
-
2018
- 2018-10-10 WO PCT/CN2018/109628 patent/WO2019114390A1/en active Application Filing
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484020A (en) * | 2002-07-29 | 2004-03-24 | ��ʽ�����ɽ | Electrostatic capacitive sensor |
| CN1847857A (en) * | 2005-04-15 | 2006-10-18 | 威海双丰电子集团有限公司 | Capacitor MEMS acceleration sensor |
| CN102507688A (en) * | 2011-10-13 | 2012-06-20 | 中国科学院化学研究所 | Electrochemical biological sensor and preparation method and application thereof |
| CN102841109A (en) * | 2012-08-28 | 2012-12-26 | 浙江工业大学 | Device for testing thermal expansion properties of novel nano thermo-sensitive composite material |
| CN103076370A (en) * | 2012-12-28 | 2013-05-01 | 武汉纺织大学 | Flexible sensor capable of detecting ammonia at normal temperature and preparation method thereof |
| WO2014114148A1 (en) * | 2013-01-25 | 2014-07-31 | 深圳市汇顶科技股份有限公司 | Single-layer capacitive touch sensor and touch control terminal |
| US20160231849A1 (en) * | 2013-06-23 | 2016-08-11 | Nissha Printing Co., Ltd. | Touch panel having press detection function |
| CN104555882A (en) * | 2013-10-10 | 2015-04-29 | 原相科技股份有限公司 | Micro-electro-mechanical element and micro-electro-mechanical compensation structure |
| JP2015233030A (en) * | 2014-06-09 | 2015-12-24 | 株式会社リコー | Method for manufacturing electromechanical conversion film, method for manufacturing electromechanical conversion device, liquid discharge head, ink-jet printer, deflection mirror, acceleration sensor, hdd head fine controller, ferroelectric memory device, angular rate sensor, micropump and microvalve |
| CN106046216A (en) * | 2016-07-07 | 2016-10-26 | 广州海谷电子科技有限公司 | High-temperature-resistant and high-humidity humidity-sensitive polymer, method for preparing same and capacitive sensor prepared on basis of high-temperature-resistant and high-humidity humidity-sensitive polymer |
| CN105928567A (en) * | 2016-07-13 | 2016-09-07 | 中国电子科技集团公司第四十九研究所 | Silicon-based gas sensitive chip of integrated humiture sensor and manufacturing method thereof |
| CN106017718A (en) * | 2016-07-28 | 2016-10-12 | 国网山西省电力公司忻州供电公司 | Flexible temperature sensor |
| CN207688895U (en) * | 2017-12-11 | 2018-08-03 | 深圳市国华光电科技有限公司 | A kind of sensor |
Non-Patent Citations (1)
| Title |
|---|
| 林金堵;: "喷墨打印技术在PCB中的应用前景", 印制电路信息, no. 04, pages 8 - 13 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019114390A1 (en) * | 2017-12-11 | 2019-06-20 | 华南师范大学 | Sensor, and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019114390A1 (en) | 2019-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Farahani et al. | Humidity sensors principle, mechanism, and fabrication technologies: a comprehensive review | |
| CN100523799C (en) | Polyelectrolyte / intrinsic conducting polymer composite humidity sensor and its production method | |
| CN107589155A (en) | A kind of capacitance type sensor and preparation method thereof | |
| CN105758562A (en) | Flexible pressure sensor and preparation method thereof | |
| CN104634833B (en) | MEMS capacitive relative humidity sensor and preparation method thereof | |
| CN108400019A (en) | Flexible miniature ultracapacitor and preparation method thereof | |
| CN108615807A (en) | A kind of range and the adjustable flexible sensor of sensitivity and preparation method thereof | |
| CN103474568B (en) | Based on the film thermocouple preparation method of printed electronics | |
| CN104461211B (en) | A kind of 3D manufacture methods of resistive touch screen | |
| CN207688895U (en) | A kind of sensor | |
| CN108217575A (en) | A kind of sensor and preparation method thereof | |
| CN204008531U (en) | A kind of MEMS gas sensor with adiabatic groove | |
| Ahmad et al. | A low-cost printed humidity sensor on cellulose substrate by EHD printing | |
| CN109764981B (en) | Flexible force-heat integrated sensor | |
| CN106092203B (en) | A kind of multifunction sensor device and preparation method thereof | |
| CN114235226A (en) | Off-electric wireless passive flexible pressure sensor, preparation and application | |
| CN109399556A (en) | A kind of preparation method of the flexible micro-nano pressure sensor based on mode of printing | |
| CN106383161B (en) | Based on Li3PO4-Li4SiO4Potential type gas sensor of hybrid solid electrolyte and preparation method thereof | |
| CN103901079A (en) | Test paper with code information and manufacturing method thereof | |
| CN207133149U (en) | A kind of QCM humidity sensors | |
| Kinkeldei et al. | Feasibility of printing woven humidity and temperature sensors for the integration into electronic textiles | |
| JP2006275997A (en) | Dew condensation sensor and method for manufacturing the same | |
| CN104742549A (en) | Preparation method for decorating silk-screen printing electrode ethanol sensor by nanometer copper oxide | |
| CN104914153B (en) | Two-layer electrode formula solid electrolyte CO2Gas sensor and preparation technology | |
| CN110702747B (en) | Diaminoanthraquinone squaramide polymer, humidity-sensitive sensor based on squaramide polymer and preparation method of humidity-sensitive sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |