CN105758562A - Flexible pressure sensor and preparation method thereof - Google Patents

Flexible pressure sensor and preparation method thereof Download PDF

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Publication number
CN105758562A
CN105758562A CN201610189094.0A CN201610189094A CN105758562A CN 105758562 A CN105758562 A CN 105758562A CN 201610189094 A CN201610189094 A CN 201610189094A CN 105758562 A CN105758562 A CN 105758562A
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film
micro
carbon nanotube
nano structure
thin film
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CN105758562B (en
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魏雄邦
肖伦
全勇
陈志�
庞韩英
蒋昆
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Abstract

The invention relates to a flexible pressure sensor and a preparation method thereof and belongs to the field of sensors. The flexible pressure sensor successively comprises, from top to bottom, a first micro nano structure PDMS film, a first CNT film, a millimeter structure PDMS layer, a second CNT film, and a second micro nano structure PDMS film. The millimeter structure PDMS layer comprises two strip-shaped PDMS films on both ends of the first CNT film and with thicknesses from 1 to 2mm. The surfaces of the first micro nano structure PDMS film and the second micro nano structure PDMS film are conical structures. The micro nano structure PDMS films prepared by using black silicon as a template is used as the electrode substrate of the pressure sensor, the CNT films are used as the electrodes of the pressure sensor, and the millimeter structure PDMS layer is introduced between the upper electrode and the lower electrode. Thus, the pressure sensor is greatly increased in sensitivity and good in stability.

Description

A kind of pliable pressure sensor and preparation method thereof
Technical field
The invention belongs to sensor field, be specifically related to a kind of pliable pressure sensor and preparation method thereof.
Background technology
Pliable pressure sensor is to be the flexible electronic device of electrical signal by stress conversion, the mechanical quantity conversion to electrical signal is realized typically via capacity effect, piezoelectric effect or piezoresistance effect, at present, pliable pressure sensor is widely used in the fields such as flexible touch screen, intelligent robot, portable medical and frame for movement damage check.
The favor that resistance-type pliable pressure sensor processes circuit and higher sensitivity owing to having device architecture later data simple, easy and enjoys industrial circle and research circle;Being a kind of resistance-type pliable pressure sensor to electric pole type pliable pressure sensor, its device architecture is simple and easy, sensitivity is significantly high, has research and application potential greatly.The ChanghyunPang research group of Seoul National University uses a silicon as template and prepares and have micro-nano finger array, then on PDMS film, sputter Pt membrane electrode be assembled into the pressure transducer (ChanghyunPang to electrode structure, NatureMaterials, 2012,7);This sensor utilizes the finger-like conductive structure being covered with Pt electrode to be stressed effect contact area and changes thus stress conversion is realized pressure sensing for resistance variations, can detect that the minimum pressure for 5Pa, and device performance is stable in 8000 retests.Although the PDMS film with micro-nano structure can improve the sensitivity of pliable pressure sensor, but the exposure effect merely with micro-nano structure improves sensitivity, and the lifting of sensitivity is limited, and less stable.
Summary of the invention
The present invention is directed to the defect that background technology exists, it is proposed that a kind of novel pliable pressure sensor and preparation method thereof.Electric pole type pressure transducer is adopted micro-nano structure PDMS (polydimethylsiloxane) thin film using black silicon to prepare as template as pressure transducer electrode substrate by the present invention, adopt carbon nanotube thin film as pressure transducer electrode, and between upper/lower electrode, introduce the PDMS layer of millimeter structure, the sensitivity of the pressure transducer obtained is greatly improved, and stability is better.
Technical scheme is as follows:
A kind of pliable pressure sensor, is followed successively by the first micro-nano structure PDMS film, the first carbon nanotube thin film, millimeter structure PDMS layer, the second carbon nanotube thin film and the second micro-nano structure PDMS film from bottom to top;Described millimeter structure PDMS layer includes two strip PDMS film, is positioned at the two ends of the first carbon nanotube thin film, and thickness is 1~2mm, and described first micro-nano structure PDMS film and the second micro-nano structure PDMS film surface are vertebral body structure.
Further, described millimeter structure PDMS layer includes two strip PDMS film, is positioned at the two ends of carbon nanotube thin film, and the distance between two strip PDMS film is 20~26mm, and the thickness of strip PDMS film is 1~2mm.
Further, the thickness of described first micro-nano structure PDMS film and the second micro-nano structure PDMS film is 0.5~2mm, and surface is the vertebral body that thickness is 2~10 μm of array arrangement;The thickness of described first carbon nanotube thin film and the second carbon nanotube thin film is 100~300nm.
The preparation method of a kind of pliable pressure sensor, specifically includes following steps:
Step 1: prepare the first micro-nano structure PDMS film and the first carbon nanotube thin film;
Step 2: two strip PDMS film are laminated in the first carbon nanotube thin film two ends, obtains a millimeter structure PDMS layer;
Step 3: prepare the second micro-nano structure PDMS film and the second carbon nanotube thin film, and adopt the second carbon nanotube thin film the second micro-nano structure PDMS film and the second carbon nanotube thin film to be laminated on the millimeter structure PDMS layer that step 2 obtains towards the mode of the first carbon nanotube thin film;Thus obtaining pliable pressure sensor of the present invention.
Further, the preparation process of the first micro-nano structure PDMS film described in step 1 and the second micro-nano structure PDMS film described in step 3 is particularly as follows: a) ultrasonic cleaning 15~30min in acetone, ethanol successively by silicon chip, then adopting deionized water rinsing, nitrogen dries up;B) silicon chip that upper step is cleaned after drying up is positioned in the vacuum chamber of three-dimensional mobile platform, in vacuum chamber, passes into SF4After gas, it is 0.42J/cm in energy density2, umber of pulse be 612.5, energy be 0.1mJ femtosecond laser under be scanned ablation with the speed of 1mm/s, obtain black silicon, its SEM schemes as shown in Figure 2;C) above walk the black silicon obtained and clean 15~30min in acetone, dehydrated alcohol and deionized water for ultrasonic successively, after nitrogen dries up, be soaked in TMCS (trim,ethylchlorosilane) solution, heating in water bath 5~10min at 60~70 DEG C, takes out stand-by;D) by polydimethylsiloxane host and sclerosing agent according to the ratio mix homogeneously that mass ratio is 10:1,20~30min is placed to remove bubble under the vacuum environment of 0.1Torr, obtain polydimethylsiloxane spin coating liquid, then spin coating polydimethylsiloxane spin coating liquid on the black silicon obtained after upper step processes, rotating speed is 400~500rpm, degasification 20~40min under the vacuum environment of 0.1Torr first it is placed in after spin coating is complete, dry 1~3h at 60~70 DEG C of temperature, peel off, the PDMS film of micro-nano structure can be obtained.
Further, the thickness of the first micro-nano structure PDMS film described in step 1 and the second micro-nano structure PDMS film described in step 3 is 0.5~2mm, and surface is the vertebral body that thickness is 2~10 μm of array arrangement.
Further, the detailed process preparing carbon nanotube thin film on micro-nano structure PDMS film is: a) shift, on the first micro-nano structure PDMS film and the second micro-nano structure PDMS film, the carbon nanotube thin film that thickness is 100~300nm respectively, then at 90~110 DEG C, make annealing treatment 10~30min, obtain the first carbon nanotube thin film and the second carbon nanotube thin film;B) the first carbon nanotube thin film obtained in upper step and the edge of the second carbon nanotube thin film are respectively coated with conductive silver glue and adhere to Cu wire and draw, and at 60~80 DEG C of temperature baking the affected part after applying some drugs 20~40min until conductive silver glue solidification.
Further, the preparation process of strip PDMS film described in step 2 is particularly as follows: mix the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio, under the vacuum environment of 0.1Torr, place 10~30min to remove bubble, obtain polydimethylsiloxane spin coating liquid;Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment;Finally the dry 1~3h at 60~80 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under the polydimethylsiloxanefilm film after curing molding being peeled off, the strip PDMS film that thickness is 1~2mm can be obtained.
The invention have the benefit that
1, electric pole type pressure transducer is adopted the micro-nano structure PDMS film using black silicon to prepare as template as pressure transducer electrode substrate by the present invention, adopt carbon nanotube thin film as pressure transducer electrode, by introducing the PDMS layer of millimeter structure between upper/lower electrode, so that form air groove between upper/lower electrode, the existence of air groove makes the downward deformation quantitative change of the second micro-nano structure PDMS film of top big, and can prevent device from deformity deformation occurring, improve the sensitivity of device.
2, the present invention adopts femtosecond to etch black silicon as the template preparing micro-nano structure PDMS film, the shortcoming overcoming conventional lithography silicon template cost height, cycle length, and can accurately obtain the micro-nano structure of patterning.
Accompanying drawing explanation
Fig. 1 is the structural representation of pliable pressure sensor of the present invention;Wherein, 1 is the second micro-nano structure PDMS film, and 2 is the second carbon nanotube thin film, and 3 is millimeter structure PDMS layer, and 4 is silver electrode, and 5 is the copper cash for testing extraction, and 6 is the first carbon nanotube thin film, and 7 is the first micro-nano structure PDMS film;
Fig. 2 is the SEM figure of the black silicon face that the embodiment of the present invention adopts femtosecond laser method to prepare;
Fig. 3 is the pliable pressure sensor that obtains of embodiment of the present invention responsiveness test curve under different pressure;
Fig. 4 is the pliable pressure sensor that obtains of comparative example responsiveness test curve under different pressure.
Detailed description of the invention
Below in conjunction with drawings and Examples in detail, technical scheme is described in detail.
A kind of pliable pressure sensor, is followed successively by the first micro-nano structure PDMS film, the first carbon nanotube thin film, millimeter structure PDMS layer, the second carbon nanotube thin film and the second micro-nano structure PDMS film from bottom to top;Described millimeter structure PDMS layer includes two strip PDMS film, is positioned at the two ends of the first carbon nanotube thin film, and thickness is 1~2mm, and described first micro-nano structure PDMS film and the second micro-nano structure PDMS film surface are vertebral body structure.
Further, described millimeter structure PDMS layer includes two identical strip PDMS film, is positioned at the two ends of carbon nanotube thin film, and the distance between two strip PDMS film is 20~26mm, and the thickness of strip PDMS film is 1~2mm.
Further, the thickness of described first micro-nano structure PDMS film and the second micro-nano structure PDMS film is 0.5~2mm, and surface is the vertebral body that thickness is 2~10 μm of array arrangement;The thickness of described first carbon nanotube thin film and the second carbon nanotube thin film is 100~300nm.
The preparation method of a kind of pliable pressure sensor, specifically includes following steps:
Step 1, preparing the first micro-nano structure PDMS film and the first carbon nanotube thin film: a) silicon chip of 6 inches is cut into 3cm × 3cm size, then ultrasonic cleaning 15~30min in acetone, ethanol successively, then adopt deionized water rinsing, nitrogen dries up;B) silicon chip that upper step is cleaned after drying up is positioned in the vacuum chamber of three-dimensional mobile platform, in vacuum chamber, passes into SF4After gas, it is 0.42J/cm in energy density2, umber of pulse be 612.5, energy be 0.1mJ femtosecond laser under be scanned ablation with the speed of 1mm/s, obtain black silicon, its SEM schemes as shown in Figure 2;C) above walk the black silicon obtained and clean 15~30min in acetone, dehydrated alcohol and deionized water for ultrasonic successively, after nitrogen dries up, be soaked in TMCS (trim,ethylchlorosilane) solution, heating in water bath 5~10min at 60~70 DEG C, takes out stand-by;D) by polydimethylsiloxane host and sclerosing agent according to the ratio mix homogeneously that mass ratio is 10:1,20~30min is placed to remove bubble under the vacuum environment of 0.1Torr, obtain polydimethylsiloxane spin coating liquid, then spin coating polydimethylsiloxane spin coating liquid on the black silicon obtained after upper step processes, rotating speed is 400~500rpm, degasification 20~40min under the vacuum environment of 0.1Torr first it is placed in after spin coating is complete, dry 1~3h at 60~70 DEG C of temperature, peel off, the first micro-nano structure PDMS film can be obtained;E) shifting thickness on the first micro-nano structure PDMS film that upper step obtains is the carbon nanotube thin film of 100~300nm, then at 90~110 DEG C, make annealing treatment 10~30min, obtain the first carbon nanotube thin film, the first carbon nanotube thin film edge coating conductive silver glue and adhere to Cu wire draw, and at 60~80 DEG C of temperature baking the affected part after applying some drugs 20~40min until conductive silver glue solidification;
Step 2, millimeter structure PDMS layer preparation: a) ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio is mixed, under the vacuum environment of 0.1Torr place 10~30min to remove bubble, obtain polydimethylsiloxane spin coating liquid;B) the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment;C) the dry 1~3h at 60~80 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under the polydimethylsiloxanefilm film after curing molding being peeled off, the strip PDMS film that thickness is 1~2mm can be obtained;D) two strip PDMS film being put in the two ends of the first carbon nanotube thin film respectively, can obtain a millimeter structure PDMS layer, the distance between two strip PDMS film is 20~26mm;
The method that step 3, employing and step 1 are identical prepares the second micro-nano structure PDMS film and the second carbon nanotube thin film, and adopts the second carbon nanotube thin film the second micro-nano structure PDMS film and the second carbon nanotube thin film to be laminated on the millimeter structure PDMS layer that step 2 obtains towards the mode of the first carbon nanotube thin film;Thus obtaining pliable pressure sensor of the present invention.
Further, the thickness of the first micro-nano structure PDMS film described in step 1 and the second micro-nano structure PDMS film described in step 3 is 0.5~2mm, and surface is the vertebral body that thickness is 2~10 μm of array arrangement.
Embodiment
The preparation method of a kind of pliable pressure sensor, specifically includes following steps:
Step 1, preparing the first micro-nano structure PDMS film and the first carbon nanotube thin film: a) silicon chip of 6 inches is cut into 3cm × 3cm size, then ultrasonic cleaning 15min in acetone, ethanol successively, then adopt deionized water rinsing, nitrogen dries up;B) silicon chip that upper step is cleaned after drying up is positioned in the vacuum chamber of three-dimensional mobile platform, in vacuum chamber, passes into SF4After gas, it is 0.42J/cm in energy density2, umber of pulse be 612.5, energy be 0.1mJ femtosecond laser under be scanned ablation with the speed of 1mm/s, obtain black silicon, its SEM schemes as shown in Figure 2;C) above walk the black silicon obtained and clean 15min in acetone, dehydrated alcohol and deionized water for ultrasonic successively, after nitrogen dries up, be soaked in TMCS (trim,ethylchlorosilane) solution, heating in water bath 5min at 65 DEG C, takes out stand-by;D) by polydimethylsiloxane host and sclerosing agent according to the ratio mix homogeneously that mass ratio is 10:1,30min is placed to remove bubble under the vacuum environment of 0.1Torr, obtain polydimethylsiloxane spin coating liquid, then spin coating polydimethylsiloxane spin coating liquid on the black silicon obtained after upper step processes, rotating speed is 500rpm, is first placed under the vacuum environment of 0.1Torr degasification 30min after spin coating is complete, dry 1h at 65 DEG C of temperature, peel off, the first micro-nano structure PDMS film can be obtained;E) shifting thickness on the first micro-nano structure PDMS film that upper step obtains is the carbon nanotube thin film of 300nm, then at 100 DEG C, make annealing treatment 30min, obtain the first carbon nanotube thin film, the first carbon nanotube thin film edge coating conductive silver glue and adhere to Cu wire draw, and at 65 DEG C of temperature baking the affected part after applying some drugs 30min until conductive silver glue solidification;
Step 2, millimeter structure PDMS layer preparation: a) ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio is mixed, under the vacuum environment of 0.1Torr place 30min to remove bubble, obtain polydimethylsiloxane spin coating liquid;B) the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment;C) the dry 1h at 65 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under the polydimethylsiloxanefilm film after curing molding being peeled off, the strip PDMS film that thickness is 1mm can be obtained;D) two strip PDMS film are put in respectively the two ends of the first carbon nanotube thin film, a millimeter structure PDMS layer can be obtained;
The method that step 3, employing and step 1 are identical prepares the second micro-nano structure PDMS film and the second carbon nanotube thin film, and adopts the second carbon nanotube thin film the second micro-nano structure PDMS film and the second carbon nanotube thin film to be laminated on the millimeter structure PDMS layer that step 2 obtains towards the mode of the first carbon nanotube thin film;Thus obtaining pliable pressure sensor of the present invention.
Comparative example
The preparation method of a kind of pliable pressure sensor, specifically includes following steps:
Step 1, preparing the first micro-nano structure PDMS film and the first carbon nanotube thin film: a) silicon chip of 6 inches is cut into 3cm × 3cm size, then ultrasonic cleaning 15min in acetone, ethanol successively, then adopt deionized water rinsing, nitrogen dries up;B) silicon chip that upper step is cleaned after drying up is positioned in the vacuum chamber of three-dimensional mobile platform, in vacuum chamber, passes into SF4After gas, it is 0.42J/cm in energy density2, umber of pulse be 612.5, energy be 0.1mJ femtosecond laser under be scanned ablation with the speed of 1mm/s, obtain black silicon, its SEM schemes as shown in Figure 2;C) above walk the black silicon obtained and clean 15min in acetone, dehydrated alcohol and deionized water for ultrasonic successively, after nitrogen dries up, be soaked in TMCS (trim,ethylchlorosilane) solution, heating in water bath 5min at 65 DEG C, takes out stand-by;D) by polydimethylsiloxane host and sclerosing agent according to the ratio mix homogeneously that mass ratio is 10:1,30min is placed to remove bubble under the vacuum environment of 0.1Torr, obtain polydimethylsiloxane spin coating liquid, then spin coating polydimethylsiloxane spin coating liquid on the black silicon obtained after upper step processes, rotating speed is 500rpm, is first placed under the vacuum environment of 0.1Torr degasification 30min after spin coating is complete, dry 1h at 65 DEG C of temperature, peel off, the first micro-nano structure PDMS film can be obtained;E) shifting thickness on the first micro-nano structure PDMS film that upper step obtains is the carbon nanotube thin film of 300nm, then at 100 DEG C, make annealing treatment 30min, obtain the first carbon nanotube thin film, the first carbon nanotube thin film edge coating conductive silver glue and adhere to Cu wire draw, and at 65 DEG C of temperature baking the affected part after applying some drugs 30min until conductive silver glue solidification;
The method that step 2, employing and step 1 are identical prepares the second micro-nano structure PDMS film and the second carbon nanotube thin film, and adopts the second carbon nanotube thin film the second micro-nano structure PDMS film and the second carbon nanotube thin film to be laminated in the first carbon nanotube thin film that step 1 obtains towards the mode of the first carbon nanotube thin film;Thus obtaining pliable pressure sensor.
Pliable pressure sensor embodiment and comparative example the obtained resistance variations testing device under fixing weight generation fixed pressure represents the responsiveness of device, and the responsiveness computing formula of device is:Wherein, Ri represents the initial resistivity value of device, and Rr represents the resistance value of the device applied under fixed pressure, and Δ R represents the increased resistance value after applying fixed pressure.
Fig. 3 is the pliable pressure sensor that obtains of embodiment of the present invention responsiveness test curve under different pressure.From the figure 3, it may be seen that the responsiveness that the pliable pressure sensor of embodiment is under 100Pa is 50%, the responsiveness under 50Pa is 47%, and under 10Pa pressure, responsiveness is 35%, and under 5Pa, responsiveness is 25%;After device is repeatedly applied pressure, its resistance value does not have significant change, and device stability is better.To sum up, the pliable pressure sensor that embodiment obtains is compared with comparative example, and sensitivity and stability all have greatly improved.
Fig. 4 is the pliable pressure sensor that obtains of comparative example responsiveness test curve under different pressure.As shown in Figure 4, the pliable pressure sensor of comparative example responsiveness under 100Pa is 29.6%, and the responsiveness at 50Pa is 22%, and under 10Pa pressure, responsiveness is 11.7%, and under 5Pa, responsiveness is 1.8%;After device is repeatedly applied pressure, its resistance value tapers into, less stable.Therefore, the pliable pressure sensor that comparative example obtains is compared with the present invention, and sensitivity and stability are all poor.

Claims (8)

1. a pliable pressure sensor, is followed successively by the first micro-nano structure PDMS film, the first carbon nanotube thin film, millimeter structure PDMS layer, the second carbon nanotube thin film and the second micro-nano structure PDMS film from bottom to top;Described millimeter structure PDMS layer includes two strip PDMS film, is positioned at the two ends of the first carbon nanotube thin film, and thickness is 1~2mm, and described first micro-nano structure PDMS film and the second micro-nano structure PDMS film surface are vertebral body structure.
2. pliable pressure sensor according to claim 1, it is characterised in that described millimeter structure PDMS layer includes two strip PDMS film, is positioned at the two ends of carbon nanotube thin film, and the distance between two strip PDMS film is 20~26mm.
3. pliable pressure sensor according to claim 1, it is characterised in that the thickness of described first micro-nano structure PDMS film and the second micro-nano structure PDMS film is 0.5~2mm, surface is the vertebral body that thickness is 2~10 μm of array arrangement;The thickness of described first carbon nanotube thin film and the second carbon nanotube thin film is 100~300nm.
4. a preparation method for pliable pressure sensor, specifically includes following steps:
Step 1: prepare the first micro-nano structure PDMS film and the first carbon nanotube thin film;
Step 2: two strip PDMS film are laminated in the first carbon nanotube thin film two ends, obtains a millimeter structure PDMS layer;
Step 3: prepare the second micro-nano structure PDMS film and the second carbon nanotube thin film, and adopt the second carbon nanotube thin film the second micro-nano structure PDMS film and the second carbon nanotube thin film to be laminated on the millimeter structure PDMS layer that step 2 obtains towards the mode of the first carbon nanotube thin film;Thus obtaining pliable pressure sensor of the present invention.
5. the preparation method of pliable pressure sensor according to claim 4, it is characterized in that, the preparation process of the first micro-nano structure PDMS film described in step 1 and the second micro-nano structure PDMS film described in step 3 is particularly as follows: a) ultrasonic cleaning 15~30min in acetone, ethanol successively by silicon chip, then adopting deionized water rinsing, nitrogen dries up;B) silicon chip that upper step is cleaned after drying up is positioned in the vacuum chamber of three-dimensional mobile platform, in vacuum chamber, passes into SF4After gas, it is 0.42J/cm in energy density2, umber of pulse be 612.5, energy be 0.1mJ femtosecond laser under be scanned ablation with the speed of 1mm/s, obtain black silicon, its SEM schemes as shown in Figure 2;C) above walk the black silicon obtained and clean 15~30min in acetone, dehydrated alcohol and deionized water for ultrasonic successively, after nitrogen dries up, be soaked in TMCS solution, heating in water bath 5~10min at 60~70 DEG C, takes out stand-by;D) by polydimethylsiloxane host and sclerosing agent according to the ratio mix homogeneously that mass ratio is 10:1,20~30min is placed to remove bubble under the vacuum environment of 0.1Torr, obtain polydimethylsiloxane spin coating liquid, then spin coating polydimethylsiloxane spin coating liquid on the black silicon obtained after upper step processes, rotating speed is 400~500rpm, degasification 20~40min under the vacuum environment of 0.1Torr first it is placed in after spin coating is complete, dry 1~3h at 60~70 DEG C of temperature, peel off, the PDMS film of micro-nano structure can be obtained.
6. the preparation method of pliable pressure sensor according to claim 4, it is characterized in that, the thickness of the first micro-nano structure PDMS film described in rapid 1 and the second micro-nano structure PDMS film described in step 3 is 0.5~2mm, and surface is the vertebral body that thickness is 2~10 μm of array arrangement.
7. the preparation method of pliable pressure sensor according to claim 4, it is characterized in that, the detailed process preparing carbon nanotube thin film on micro-nano structure PDMS film is: shift, on the first micro-nano structure PDMS film and the second micro-nano structure PDMS film, the carbon nanotube thin film that thickness is 100~300nm respectively, then at 90~110 DEG C, make annealing treatment 10~30min, obtain the first carbon nanotube thin film and the second carbon nanotube thin film.
8. the preparation method of pliable pressure sensor according to claim 4, it is characterized in that, the preparation process of strip PDMS film described in step 2 is particularly as follows: mix the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio, under the vacuum environment of 0.1Torr, place 10~30min to remove bubble, obtain polydimethylsiloxane spin coating liquid;Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment;Finally the dry 1~3h at 60~80 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under the polydimethylsiloxanefilm film after curing molding being peeled off, the strip PDMS film that thickness is 1~2mm can be obtained.
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CN112834087A (en) * 2021-01-06 2021-05-25 武汉大学 Double-layer flexible pressure sensor and preparation method thereof
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CN114754906A (en) * 2022-03-18 2022-07-15 复旦大学 Ultra-sensitive flexible pressure sensor inspired by biology and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103083007A (en) * 2013-01-29 2013-05-08 中国科学院苏州纳米技术与纳米仿生研究所 Piezoresistive electronic skin and preparation method thereof
CN104359597A (en) * 2014-11-13 2015-02-18 中国科学院重庆绿色智能技术研究院 Electronic skin based on three-dimensional flexible substrate graphene and preparing method thereof
CN104951172A (en) * 2014-03-31 2015-09-30 松下知识产权经营株式会社 Pressure-sensitive element, method of producing the pressure-sensitive element, touch panel equipped with the pressure-sensitive element, and method of producing the pressure-sensitive element
CN105021329A (en) * 2015-07-22 2015-11-04 上海交通大学 Resistor-type pressure sensor and making method thereof
WO2015181172A1 (en) * 2014-05-28 2015-12-03 Martin Bengtsson A functionally radiolucent capacative pressure sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103083007A (en) * 2013-01-29 2013-05-08 中国科学院苏州纳米技术与纳米仿生研究所 Piezoresistive electronic skin and preparation method thereof
CN104951172A (en) * 2014-03-31 2015-09-30 松下知识产权经营株式会社 Pressure-sensitive element, method of producing the pressure-sensitive element, touch panel equipped with the pressure-sensitive element, and method of producing the pressure-sensitive element
WO2015181172A1 (en) * 2014-05-28 2015-12-03 Martin Bengtsson A functionally radiolucent capacative pressure sensor
CN104359597A (en) * 2014-11-13 2015-02-18 中国科学院重庆绿色智能技术研究院 Electronic skin based on three-dimensional flexible substrate graphene and preparing method thereof
CN105021329A (en) * 2015-07-22 2015-11-04 上海交通大学 Resistor-type pressure sensor and making method thereof

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WO2019113731A1 (en) * 2017-12-11 2019-06-20 中国科学院深圳先进技术研究院 Flexible pressure sensor and method for preparing same
CN108225625A (en) * 2017-12-11 2018-06-29 中国科学院深圳先进技术研究院 Pliable pressure sensor and preparation method thereof
CN108225625B (en) * 2017-12-11 2022-07-22 中国科学院深圳先进技术研究院 Flexible pressure sensor and preparation method thereof
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CN108195491B (en) * 2017-12-14 2020-05-08 中国科学院深圳先进技术研究院 Flexible pressure sensor and preparation method thereof
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