CN110118624A - A kind of pressure sensor and preparation method thereof - Google Patents
A kind of pressure sensor and preparation method thereof Download PDFInfo
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- CN110118624A CN110118624A CN201910354117.2A CN201910354117A CN110118624A CN 110118624 A CN110118624 A CN 110118624A CN 201910354117 A CN201910354117 A CN 201910354117A CN 110118624 A CN110118624 A CN 110118624A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Abstract
The present invention provides a kind of pressure sensors and preparation method thereof, pressure sensor is equipped with coarse interdigital electrode by the first substrate surface of first electrode plate, second electrode plate forms the second substrate and micro structure array, the inconsistent connection of rough surface and micro structure array of interdigital electrode using graphene/PMDS mixing material or graphene/PI mixing material.Pressure sensor second electrode plate therein forms the second substrate and micro structure array integration using graphene/PMDS mixing material or graphene/PI mixing material, so that the stability of pressure sensor obtained greatly promotes, there has also been large increases for service life, the reaction speed of pressure sensor has also been greatly improved simultaneously, the structure of the pressure sensor is simple, its preparation process difficulty is low, is easy to be mass produced.
Description
Technical field
The present invention relates to pressure sensor technique fields more particularly to a kind of pressure sensor and preparation method thereof.
Background technique
Pressure sensor is the basis of modern Intelligent life, electronic skin, wearable electronic, human body physical sign monitoring,
The fields such as intelligent robot, almost all smart machines all be unable to do without pressure sensor.Wherein, pliable pressure sensor is because of its tool
Flexible, soft flexible feature, is widely used.With the development of artificial intelligence, for the sensitive of pliable pressure sensor
Degree requires to be continuously improved, and flexible, wearability and light-weighted pressure sensor are in software robot, health monitoring and energy acquisition etc.
Field has important application value.So far, former according to its effect in studied numerous novel pressure sensor parts
The difference of reason is broadly divided into three categories: the first kind, resistive pressure sensor mainly pass through the variation of measurement resistance
To reflect the size of pressure；Second class, capacitance pressure transducer, are mainly reflected by the variation of measuring circuit capacitor
The size of pressure；Third class, piezoelectric pressure indicator, i.e., mainly by measuring the pressure sensor when applying certain pressure
The potential change at part both ends reflects pressure size.Wherein, resistive pressure sensor is since its production is simple, sensitivity
High, relatively low energy is current research emphasis.
It is also higher and higher to the performance requirement of pressure sensor in order to meet the application demand of information age, to measured
The desired value and idealization of each performance parameter such as range, precision and the stable case of information require to step up.Wearable device
Sensing system gradually show its limitation with upper some, flexible insufficient including current sensor, precision is not high,
Sensing range is small, response lag and is easy interference etc. by physiology signal noise, causes to dress uncomfortable, signal and adopt
Collect fuzzy and imperfect, inaccurate etc..
A kind of resistive pressure sensor is developed at present, and wherein the surface of first electrode plate has the metal of rough surface
Interdigital electrode, the surface of second electrode plate are formed on micro structure array and the micro structure array and are covered with complex metal layer, lead to
It crosses complex metal layer and is mutually contradicted with rough surface and is connect.This kind of Sensitivity in Pressure Sensors height, but due to micro structure array
Material is PMDS, and the complex metal layer that surface covers is low with micro structure array affinity, and pressure sensor is caused to be recycled
Complex metal layer is easy to fall off in the process, and pressure sensor stability is poor, service life limitation.
In consideration of it, overcome the above defect in the prior art, a kind of pressure sensor and preparation method thereof is provided.
Summary of the invention
It is an object of the invention in view of the above drawbacks of the prior art, provide a kind of linkage fire-fighting system of energy storage container
System.
The purpose of the present invention can be realized by technical measures below:
To achieve the goals above, the present invention provides a kind of pressure sensor, the pressure sensor includes opposite sets
The first electrode plate and second electrode plate set, the first electrode plate include the first substrate and are arranged in first substrate one
Metal interdigital electrode on a surface, the metal interdigital electrode have rough surface；
The second electrode plate includes the second substrate, and a surface of second substrate has a micro structure array, institute the
The material of two substrates includes graphene/PI mixing material or graphene/PDMS mixing material；
Wherein, the micro structure array is mutually contradicted with the rough surface and is connect.
Preferably, the material of first substrate is PI.
Preferably, second substrate with a thickness of 1~2mm, the height of the micro structure array is 6~8 μm, described micro-
The center spacing of two neighboring micro-structure in array of structures is 10~20 μm.
Preferably, the micro structure array includes the different multiple micro-structures of height or the consistent multiple micro-structures of height.
Preferably, the shape of the micro-structure is round table-like, and micro-structure upper surface radius is 3~4 μm, lower surface
Radius is 7~10 μm.
Preferably, the surface roughness on the interdigital electrode roughness surface of the metal is 8~15 μm.
Preferably, the metal interdigital electrode includes multiple sub-electrodes, and the length of each sub-electrode is 15~25mm, width
For 0.20~0.24mm, the center spacing of two neighboring sub-electrode is 0.20~0.24mm.
Preferably, the metal material of the metal interdigital electrode includes silver nanowires.
Preferably, the diameter of the silver nanowires is 30~100nm, and length is 30~100 μm.
The present invention also provides a kind of preparation methods of any of the above-described pressure sensor, comprising:
The preparation step of first electrode plate: S110 prepares the first substrate using polyimide material；S120, using silk screen
Printing technology makes the surface of first substrate plate one layer of nanometer in a surface printing silver nanowires of first substrate
Silver layer, S130 application laser scribe process etch nano silver, form the interdigital electrode with rough surface；
The preparation step of second electrode plate:
S210 prepares graphene/PMDS or graphene/PI mixing material；
Graphene/PMDS or graphene/PI are solidified to form cured layer, are etched using etching technics by S220
The cured layer, the cured layer after etching are the second electrode plate；Or, S220, prepares photoresist diaphragm plate, using reverse mould
Technique forms graphene/PMDS or graphene/PI cured layer on the photoresist diaphragm plate, dissolves solid described in photoresist lift off
Change layer, the cured layer is the second electrode plate；
Encapsulation step: the second electrode plate lamination is arranged on the first electrode plate, and encapsulation obtains the pressure
Sensor.
The beneficial effects of the invention are as follows to provide a kind of pressure sensor and preparation method thereof, pressure sensing of the invention
Device second electrode plate forms the second substrate and micro-structure using graphene/PMDS mixing material or graphene/PI mixing material
Array integration, the second substrate for being formed instead of original second electrode plate using PMDS material, micro structure array and is covered micro-
The complex metal layer on array of structures surface so that the stability of pressure sensor obtained is obviously improved, service life there has also been
Large increase, while the response speed of pressure sensor has also been greatly improved, the structure of the pressure sensor is simple, it is made
Standby technology difficulty is low, is easy to be mass produced.
Detailed description of the invention
Fig. 1 is the coarse interdigital electrode optical microscopy flowering structure figure of pressure sensor of the embodiment of the present invention.
Fig. 2 is the pressure sensor micro-structure display scanning electron microscope (SEM) photograph of the embodiment of the present invention.
Fig. 3 is the pressure sensor side structure schematic diagram of the embodiment of the present invention.
Fig. 4 is the cyclical stability test curve figure of the pressure sensor of the embodiment of the present invention.
Fig. 5 is the electrical testing curve graph of the pressure sensor of the embodiment of the present invention.
Fig. 6 is that the real-time current during the pressure sensor pressure of the embodiment of the present invention applies and discharges changes over time
Curve graph.
Fig. 7 is that the pressure of the embodiment of the present invention applies the electric current versus time curve figure of process.
Fig. 8 is electric current versus time curve figure in the pressure releasing process of the embodiment of the present invention.
Fig. 9 is the sample test equipment structure chart of the embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing and specific implementation
Invention is further described in detail for example.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
In order to keep the narration of this disclosure more detailed with it is complete, below for embodiments of the present invention and specific real
It applies example and proposes illustrative description；But this not implements or uses the unique forms of the specific embodiment of the invention.Embodiment
In cover multiple specific embodiments feature and to construction with operate these specific embodiments method and step it is suitable with it
Sequence.However, can also reach identical or impartial function and sequence of steps using other specific embodiments.
Pressure sensor structure of the invention is further told about below, please refers to Fig. 1-3, Fig. 1 illustrates of the invention real
It applies coarse interdigitated electrode structure figure, Fig. 2 under a pressure sensor optical microscopy and illustrates pressure sensor of the embodiment of the present invention
Micro-structure array architecture figure under scanning electron microscope, Fig. 3 illustrate pressure sensor side structure schematic diagram of the embodiment of the present invention.
Pressure sensor includes the first electrode plate 1 and second electrode plate 2 being oppositely arranged, and first electrode plate 1 includes first
Substrate 11 and the first substrate 11 is set towards the metal interdigital electrode 12 on a side surface of second electrode plate 2, metallic tines
Refer to that electrode 12 has rough surface 12B, and the material of the first substrate is PI.
Specifically, the metal interdigital electrode 12 on the first substrate 11 in the embodiment of the present invention includes multiple sub-electrode 12A,
The length L1 of each sub-electrode 12A is 15~25mm, and width is that D1 is 0.20~0.24mm, in two neighboring sub-electrode 12A
It is in the heart 0.20~0.24mm away from H1, the surface roughness on the interdigital electrode roughness surface of metal is 8~15 μm.In gold of the invention
Category interdigital electrode roughness range and the areal extent of interdigital electrode are able to ascend the sensitivity of pressure sensor.
Second electrode plate 2 includes the second substrate 21, and the side surface towards first electrode plate 1 of second substrate 21 has
There is micro structure array 210, micro structure array 210 includes multiple micro-structure 210A, and the material of the second substrate 21 includes graphene/PI
Mixing material or graphene/PDMS mixing material.
Specifically, the thickness H2 of the second substrate is 1~2mm, the height of micro structure array therein in the embodiment of the present invention
H3 is 6~8 μm, and the spacing H4 of two neighboring micro-structure is 10~20 μm, also, micro structure array 210 can be a variety of height
Different micro-structure 210A composition, or all micro-structure 210A are set as height having the same.Further,
Micro-structure structure in a circular table shape in the present embodiment on the second substrate, the radius of lower surface are that r1 is 7~10 μm, upper surface
Radius r2 is 3~4 μm.The altitude range of micro structure array in the present embodiment, the spacing range of micro-structure and micro-structure
The radius lower pressure sensor of upper and lower surface has excellent sensitivity.
Wherein, micro structure array 210 is mutually contradicted with rough surface 12A and is connect.
In conclusion pressure sensor provided by the invention, wherein the interdigital electrode surface of first electrode plate is coarse table
Face, the surface of second electrode plate are formed with micro structure array, the electrode structure of rough surface and the electrode structure of micro structure array
Contact under a certain pressure can be divided into Four processes: be successively point contact, point saturation, face contact and face saturation.
And the second substrate material of second electrode plate of the invention is PI/ graphene or PDMS/ graphene mixing material
Material, simplifies the preparation process of second electrode plate in the prior art, in addition also avoids micro structure array flexibility PMDS material
Material and two kinds of materials of complex metal layer are not affine, and long-time service is caused to be easy to cause the complex metal layer for being overlying on micro-structure surface easy
It falls off, so that pressure sensor is recycled, stability is poor, the data inaccuracy measured.What second electrode plate of the invention used
PI/ graphene or PDMS/ graphene mixing material are conductive, and utilize seep effect, therefore in lower range range
The slight change of interior ambient pressure will will lead to increasing sharply for contact point, so as to dramatically increase the spirit of the pressure sensor
Sensitivity and dynamic range, and also it is able to maintain the stability of device cycle.In addition, the structure of the pressure sensor is simple, it
Preparation process difficulty is low, is easy to be mass produced.
The preparation method of pressure sensor of the present invention is described further below.
In preparation first electrode plate step, comprising:
S110 prepares the first substrate using polyamide-imide material.
The left side 10min is placed specifically, the polyamic acid solution of clear viscous is put into drying box under room temperature and is evacuated to vacuum
The right side removes the bubble in solution, and then the polyamic acid solution is coated on clean glass substrate with coating instrument, is then put
It sets on level curtain coating warm table, after being gradually increased to 60 DEG C from room temperature, is kept for two hours.This is coated with to the glass of polyamic acid solution
Glass substrate is placed in the vacuum oven with nitrogen protection and vacuumizes, and being evacuated to pressure in case is 50-90Pa, is then charged with nitrogen
Gas heats up according to the procedure below to atmospheric pressure: 80 DEG C of 2hrs, 120 DEG C of 1hr, 150 DEG C of 1hr, 200 DEG C of 1hr, 250 DEG C of 1hr,
340℃1hr.It is cooled to room temperature to temperature and takes out glass plate and be placed in warm water and demould, the Kapton is then placed in 100
It is 2 hours dry in DEG C drying box, polyamide-imide film, i.e. the first substrate required for obtaining.
S120 makes the table of the first substrate using silk-screen printing technique in a surface printing silver nanowires of the first substrate
Face plates one layer of nano silver.
Specifically, above-mentioned the first substrate of polyamide-imide film is handled with oxygen gas plasma, the first lining after treatment
Bottom surface is using screen printing technique printing silver nanowires (AgNWs), so that one layer of nano silver is plated in the first substrate surface, this
In embodiment, for the diameter of the silver nanowires used for 30~100nm, length is 30~100um.
S130 etches nano silver using laser scribe process, forms the interdigital electrode with rough surface
Extra nano silver is removed by laser scribe process, forms the interdigital electrode with high roughness surface.Into one
Step, by controlling the design parameter of laser scribe process, so that the length of each sub-electrode is 15~25mm, width 0.20
~0.24mm, surface roughness are 8~15 μm, thus prepare first electrode plate.
In the preparation of second electrode plate, comprising:
S210, prepares graphene/PMDS or graphene/PI mixing material, and S220 forms graphene/PMDS or stone
Black alkene/PI cured layer etches the cured layer using etching technics, and the cured layer after etching is the second electrode plate,
Or photoresist diaphragm plate is prepared, it is solid that graphene/PMDS or graphene/PI is formed on the photoresist diaphragm plate using reverse mould technique
Change layer, dissolve cured layer described in photoresist lift off, the cured layer is the second electrode plate.
In the present embodiment, the material of the second substrate is selected as PDMS/ graphene hybrid films, and is by etching technics system
It is standby to be formed.The step specifically includes:
PDMS predecessor and curing agent, graphene weight ratio are 9~11:1:1~3, preferably 10:1:2 mixing by S210
Stirring obtains mixed liquor；Mixed liquor is put in a vacuum drying oven, the bubble in mixed liquor is removed, it is mixed to form PDMS/ graphene
Close liquid.
Specifically, in the present embodiment, electronic balance precise 15g PDMS predecessor, 1.5g curing agent and 3g stone are used
Black alkene is added stirrer and stirs 15min in 50ml beaker, and forms homogeneous solution, finally puts it into again in drying box often
It is evacuated to vacuum under temperature and places 10min or so, until naked eyes are no longer it is observed that with the presence of bubble in solution.
S220, after being successively cleaned by ultrasonic substrate of glass (or other rigid basements) with cleanser, ethyl alcohol, deionized water
It is dried up, on the glass substrate spin coating photoresist layer, then photoresist layer is exposed, developing process with nitrogen gun, by
This prepares photoresist diaphragm plate on the glass substrate, is formed with pores array in photoresist diaphragm plate.It will be in above-mentioned steps S210
Mixed liquor obtained is spin-coated on photoetching glue pattern plate with spin coating instrument, is subsequently placed on warm table and is heated to solidifying for 75-85 DEG C, is obtained
PDMS/ graphene cured layer.
Specifically, the specification of substrate of glass is long 5cm × wide 5cm × thickness 2mm in the present embodiment, successively uses cleanser, second
It is dried up again with nitrogen gun after alcohol, deionized water ultrasonic cleaning, is then placed in 80 DEG C of baking oven drying, then on the glass substrate
Spin coating photoresist layer specifically first rotates spin coating 10s under 500 revs/min, then spin coating 30s is rotated under 3000 revs/min,
The then front baking 6min at 120 DEG C, exposes 8s under litho machine, then rear at 120 DEG C to dry 3min, and develops in developer solution
3min finally dries 5min after rinsing the photoresist after above-mentioned exposure with deionized water firmly at 100 DEG C, tool is thus prepared
The photoresist diaphragm plate of hole array.It is revolved using above-mentioned photoresist film plate as substrate under sol evenning machine with 400 revs/min of spin speeds
The above-mentioned mixed liquor of 30s is applied, and stands in air and is heating and curing at 75-85 DEG C 2 hours ten minutes later, is thus made on glass
It is standby to obtain PDMS/ graphene cured layer.
S230 dissolves photoresist diaphragm plate using organic solutions such as acetone or propylene glycol methyl ether acetates, by ultrasonic clear
Cleaning is so that PDMS/ graphene cured layer is stripped down from glass substrate in washing machine, i.e., PDMS/ graphene cured layer be with
Second substrate of micro structure array.
Specifically, substrate of glass preparation being formed with after PDMS/ graphene cured layer is immersed in acetone or propylene glycol
It in the organic solutions such as methyl ether acetate, then is placed and cleans 10min or so in supersonic cleaning machine, by dissolving photoresist diaphragm plate
So that PDMS/ graphene cured layer is removed from substrate of glass, the PDMS cured layer separated is the second substrate,
The part that PDMS/ graphene cured layer corresponds to the pores array of the photoresist diaphragm plate is the micro- knot be formed as on the second substrate
Structure array.
It should be noted that controlling the shape, size, depth of hole by the exposure in above step, developing process
And pitch of holes, the micro structure array of respective shapes can be obtained.Wherein in the present embodiment the second substrate thickness H2 be 1~
2mm, the height H3 of micro structure array are 6~8 μm, and the spacing H4 of two neighboring micro-structure is 10~20 μm.Further, originally
Micro-structure structure in a circular table shape in embodiment on the second substrate, the radius of upper surface are 3~4 μm, and the radius of lower surface is 7
~10 μm.
In encapsulation step, second electrode plate lamination produced above is arranged on first electrode plate, encapsulation obtains pressure
Force snesor.
The second electrode plate lamination is arranged on the first electrode plate, wherein micro structure array and interdigital electrode
Rough surface mutually contradict connection, by ratio be 10:1 PDMS prepolymer and curing agent mixing liquid stir 15 minutes after drip
It is coated in the surrounding of first electrode plate and second electrode plate, and then at 80 DEG C in solidification 2h.Obtain pressure sensor of the invention.
Specifically, contact conductor (usually using copper conductor) is welded out in the first electrode plate, when thus to obtain high stability, response
Between fast pressure sensor, have quite wide application prospect in fields such as artificial intelligence, electronic skins.
Fig. 4 is the cyclical stability test curve figure of the pressure sensor of the embodiment of the present invention, specifically durations
Apply 3000 times that certain pressure (600Pa) discharges afterwards and recycles lower electric current relative changing value to time response curve, from figure
In it can be seen that pressure sensor of the present invention has very high circulation stability, enhance the use longevity of pressure sensor of the invention
Life.
As shown in figure 5, Fig. 5 illustrates the electrical testing curve graph of the pressure sensor of the embodiment of the present invention, it is shown that pressure
By force with the correlogram of curent change relative value.It is 983KPa by the sensitivity of the available pressure sensor of the curve-1。
As shown in figs 6-8, Fig. 6 is illustrated after rapid given external pressure, during pressure sensor pressure applies and discharges
Real-time i-t curve, Fig. 7 illustrate pressure apply process electric current change with time, Fig. 8 is illustrated in pressure releasing process
Electric current changes with time, and compared to existing pressure sensor, the response time of pressure sensor of the invention is shorter, shows
The response speed of pressure sensor of the present invention is faster.
Fig. 9 is sample test equipment of the invention.Test equipment includes pressure gauge 100, model keithley2400
Multifunctional power ammeter 200 and computer equipment 300.Pressure data is read by pressure gauge 100, passes through keithley 2400
Multifunctional power ammeter 200 read current data, data above is obtained by computer equipment 300 and calculate, draw
Make and show electric current and pressure relationship graph.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of pressure sensor, the pressure sensor includes the first electrode plate and second electrode plate being oppositely arranged, special
Sign is, the first electrode plate includes the first substrate and the interdigital electricity of metal that is arranged on first substrate, one surface
Pole, the metal interdigital electrode have rough surface；
The second electrode plate includes the second substrate, and a surface of second substrate has micro structure array, and institute second serves as a contrast
The material at bottom includes graphene/PI mixing material or graphene/PDMS mixing material；
Wherein, the micro structure array is mutually contradicted with the rough surface and is connect.
2. pressure sensor according to claim 1, which is characterized in that the material of first substrate is PI.
3. pressure sensor according to claim 1, which is characterized in that second substrate with a thickness of 1~2mm, institute
The height for stating micro structure array is 6~8 μm, and the center spacing of the two neighboring micro-structure in the micro structure array is 10~20
μm。
4. pressure sensor according to claim 1, which is characterized in that the micro structure array includes that height is different more
A micro-structure or the consistent multiple micro-structures of height.
5. pressure sensor according to claim 4, which is characterized in that the shape of the micro-structure be it is round table-like, it is described
Micro-structure upper surface radius is 3~4 μm, and the radius of lower surface is 7~10 μm.
6. pressure sensor according to claim 1, which is characterized in that the surface on the interdigital electrode roughness surface of metal
Roughness is 8~15 μm.
7. pressure sensor according to claim 1, which is characterized in that the metal interdigital electrode includes multiple son electricity
Pole, the length of each sub-electrode are 15~25mm, and width is 0.20~0.24mm, and the center spacing of two neighboring sub-electrode is
0.20~0.24mm.
8. pressure sensor according to claim 1, which is characterized in that the metal material of the metal interdigital electrode includes
Silver nanowires.
9. pressure sensor according to claim 8, which is characterized in that the diameter of the silver nanowires is 30~100nm,
Length is 30~100 μm.
10. a kind of preparation method of the pressure sensor as described in claim 1-9 is any characterized by comprising
The preparation step of first electrode plate: S110 prepares the first substrate using polyimide material；S120, using silk-screen printing
Technique makes the surface of first substrate plate one layer of nano silver in a surface printing silver nanowires of first substrate
Layer, S130 etch nano silver using laser scribe process, form the interdigital electrode with rough surface；
The preparation step of second electrode plate:
S210 prepares graphene/PMDS or graphene/PI mixing material；
S220 solidifies graphene/PMDS or graphene/PI to form cured layer, etch using etching technics described in
Cured layer, the cured layer after etching are the second electrode plate；Or, S220 ', prepares photoresist diaphragm plate, using reverse mould work
Skill forms graphene/PMDS or graphene/PI cured layer on the photoresist diaphragm plate, dissolves and solidifies described in photoresist lift off
Layer, the cured layer are the second electrode plate；
Encapsulation step: the second electrode plate lamination is arranged on the first electrode plate, and encapsulation obtains the pressure sensing
Device.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110579295A (en) * | 2019-09-16 | 2019-12-17 | 深圳先进技术研究院 | Pressure sensor and method for manufacturing the same |
| CN111024279A (en) * | 2019-12-30 | 2020-04-17 | 浙江清华柔性电子技术研究院 | Pressure sensor unit and pressure sensor |
| CN111060238A (en) * | 2019-12-26 | 2020-04-24 | 浙江清华柔性电子技术研究院 | Resistance type flexible pressure sensor and preparation method thereof |
| CN111811701A (en) * | 2020-07-20 | 2020-10-23 | 中国科学院重庆绿色智能技术研究院 | Multistage microstructure gate thin film transistor flexible pressure sensor and preparation method thereof |
| CN114199424A (en) * | 2021-11-29 | 2022-03-18 | 江苏大学 | Piezoresistive sensor and preparation process thereof |
| CN115855324A (en) * | 2022-12-26 | 2023-03-28 | 厦门大学 | Thin film pressure sensor for detecting expansion of lithium battery cell and preparation method thereof |
| WO2023138195A1 (en) * | 2022-01-18 | 2023-07-27 | 清华大学 | Flexible pressure sensor provided with microstructure and manufacturing method therefor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120137787A1 (en) * | 2009-08-14 | 2012-06-07 | Kui Yao | Piezoelectric sensor and a method of fabricating a piezoelectric sensor |
| CN104251751A (en) * | 2014-09-26 | 2014-12-31 | 中国科学院半导体研究所 | Multi-sense organ integrated electronic skin and manufacturing method thereof |
| CN104803339A (en) * | 2015-04-21 | 2015-07-29 | 电子科技大学 | Flexible micro pressure sensor and preparation method thereof |
| CN105021329A (en) * | 2015-07-22 | 2015-11-04 | 上海交通大学 | Resistor-type pressure sensor and making method thereof |
| CN105651429A (en) * | 2016-01-04 | 2016-06-08 | 京东方科技集团股份有限公司 | Piezoelectric element, manufacturing method thereof, and piezoelectric sensor |
| CN105738015A (en) * | 2016-02-01 | 2016-07-06 | 上海交通大学 | Resistive film tension sensor and preparation method thereof |
| CN105758562A (en) * | 2016-03-29 | 2016-07-13 | 电子科技大学 | Flexible pressure sensor and preparation method thereof |
| CN109540354A (en) * | 2018-12-03 | 2019-03-29 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
| CN109556768A (en) * | 2018-12-03 | 2019-04-02 | 深圳先进技术研究院 | Pressure sensor and preparation method thereof |
-
2019
- 2019-04-29 CN CN201910354117.2A patent/CN110118624A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120137787A1 (en) * | 2009-08-14 | 2012-06-07 | Kui Yao | Piezoelectric sensor and a method of fabricating a piezoelectric sensor |
| CN104251751A (en) * | 2014-09-26 | 2014-12-31 | 中国科学院半导体研究所 | Multi-sense organ integrated electronic skin and manufacturing method thereof |
| CN104803339A (en) * | 2015-04-21 | 2015-07-29 | 电子科技大学 | Flexible micro pressure sensor and preparation method thereof |
| CN105021329A (en) * | 2015-07-22 | 2015-11-04 | 上海交通大学 | Resistor-type pressure sensor and making method thereof |
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