CN104458835B - A kind of humidity sensor and preparation method thereof - Google Patents
A kind of humidity sensor and preparation method thereof Download PDFInfo
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- CN104458835B CN104458835B CN201410849515.9A CN201410849515A CN104458835B CN 104458835 B CN104458835 B CN 104458835B CN 201410849515 A CN201410849515 A CN 201410849515A CN 104458835 B CN104458835 B CN 104458835B
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Abstract
The invention provides a kind of humidity sensor and preparation method thereof, including：The substrate of surface insulation, humidity-sensitive material and interdigital electrode film layer, humidity-sensitive material positioned at insulating surface are distributed between interdigital electrode, and mutually bonded with interdigital electrode；Humidity-sensitive material is the oxidation state of interdigital electrode material.The preparation method of humidity sensor is additionally provided, including：The substrate of one surface insulation is provided；One layer of oxidation state humidity-sensitive material is formed in insulating surface；Interdigital electrode patterned mask is formed on humidity-sensitive material surface；Under the protection of interdigital electrode patterned mask, reducing process is carried out to humidity-sensitive material, interdigital electrode is formed between humidity-sensitive material；The humidity-sensitive material part that interdigital electrode patterned mask shelters from is not reduced, and the humidity-sensitive material part of interdigital electrode patterned mask exposure is reduced into interdigital electrode material；Remove interdigital electrode patterned mask.So as to be advantageous to prepare relatively thin graphene oxide humidity sensor, humidity sensor sensitivity is improved.
Description
Technical field
The present invention relates to technical field of integrated circuits, and in particular to a kind of humidity sensor and preparation method thereof.
Background technology
Humidity, the content of water vapor in air is typically referred to, it is used for the dry and wet degree for reflecting air.The daily life of people
Living and industrial and agricultural production, and the growth and existence of animals and plants, all ambient humidity with surrounding have close relationship.Humidity is surveyed
Amount needs to use humidity sensor, and it is the base that the physical effect relevant with humidity or chemical reaction can occur based on functional material
Manufactured on plinth, there is the function that humidity physical quantity is converted into electric signal.
Humidity sensor is segmented into telescopic, vaporation-type, dew point instrument, electronic type, electricity according to the difference of its operation principle
Magnetic-type etc., wherein based on the research and application of electronic type.Recent study it is more be capacitor type electronic type humidity sensor
Device, this kind of humidity sensor main operational principle are：Vapour molecule in wet sensitive Absorption of Medium air causes dielectric constant
Change, so as to which capacitance changes, being converted into the electric signal related to humidity by process circuit is read.At present, as
The material of conventional wet sensitive media mainly has porous media and high molecular polymer, but for its precision of high-end applications and response speed
All it need to be improved.In recent years, with the fast development of material science, nano-material, carbon nano-tube material, graphene base material
The Unordered system of material is gradually found and further studied.For the graphite oxide material in graphene-based material family, its is wet
Quick characteristic will be much better than traditional humidity-sensitive material.Also, research shows, property of the graphene oxide composite material thickness to humidity sensor
Can have a great impact, general graphene oxide is thinner, and the characteristic such as response speed of sensor is better.It is of the prior art to be based on
The structural representation of the humidity sensor of graphene oxide composite material is as shown in figure 1, existing based on the wet of graphene oxide composite material
The structure of degree sensor includes：Substrate 101, the insulating barrier 102 on the surface of substrate 101, the surface of insulating barrier 102 is in interphase distribution
Electrode structure 103 and the graphene oxide 104 for being covered between electrode structure 103 and its surface；Its preparation method includes：Serving as a contrast
Electrode structure 103 is formed on the insulating barrier 102 at bottom 101, then graphene oxide 104 needed for deposit, graphene oxide 104 are filled
Between electrode structure 103 and it is covered in above electrode.By technique is limited, the oxidation stone of this structure and manufacture method is used
Black alkene thickness is difficult to be made very thin, such as nanometer scale, humidity sensor performance is had a greatly reduced quality.
The content of the invention
In order to overcome problem above, it is an object of the invention to provide a kind of humidity sensor and its manufacture method, with solution
The problem of being certainly difficult to prepare relatively thin graphene oxide humidity sensor in the prior art, improve the performance of humidity sensor.
To achieve these goals, the invention provides a kind of humidity sensor, including：
Substrate, the surface insulation of the substrate；
Humidity-sensitive material and interdigital electrode film layer, it is located at the insulating surface, and the humidity-sensitive material is distributed in the fork
Between referring to electrode, and it is mutually bonded with the interdigital electrode；Wherein described humidity-sensitive material is the oxidation state of the interdigital electrode material.
Preferably, the humidity-sensitive material is graphene oxide, and the interdigital electrode is graphene or the graphite oxide of reduction
Alkene.
Preferably, the humidity-sensitive material and the thickness of interdigital electrode film layer are 1-100nm.
Preferably, the substrate is dielectric substrate or is the Semiconductor substrate that surface has insulating barrier.
To achieve these goals, present invention also offers a kind of preparation method of humidity sensor, it includes following step
Suddenly：
Step 01：The substrate of one surface insulation is provided；
Step 02：One layer of oxidation state humidity-sensitive material is formed in the insulating surface；
Step 03：Interdigital electrode patterned mask is formed on the humidity-sensitive material surface；
Step 04：Under the protection of interdigital electrode patterned mask, reducing process is carried out to the humidity-sensitive material, described wet
Quick storeroom forms interdigital electrode；Wherein, the humidity-sensitive material part that the interdigital electrode patterned mask shelters from is not gone back
Original, the humidity-sensitive material part of the interdigital electrode patterned mask exposure are reduced into interdigital electrode material；
Step 05：Remove the interdigital electrode patterned mask.
Preferably, the substrate is dielectric substrate or is the Semiconductor substrate that surface has insulating barrier.
Preferably, the oxidation state humidity-sensitive material is graphene oxide.
Preferably, in the step 02, the graphene oxide is spin-coated on the insulating surface, and place is then dried
Reason.
Preferably, in the step 04, the part graphene oxide is changed into graphene or the graphene oxide of reduction,
So as to form the interdigital electrode.
Preferably, using direct reducer reducing process, Microwave-assisted Reduction method or ultraviolet irradiation reducing process by described in part
Graphene oxide is changed into graphene or the graphene oxide of reduction.
The humidity sensor and its manufacture method of the present invention, formed by elder generation on substrate graphene oxide film be used as it is wet
The humidity-sensitive material of sensor is spent, partial oxidation of graphite alkene is then reduced into graphene or the graphene oxide of reduction, so as to
The interdigital electrode of humidity sensor is formed, humidity-sensitive material and the consistency of thickness of interdigital electrode in the humidity sensor formed, knot
Close closely, improve humidity sensor sensitivity；And because graphene oxide film can be made thin, so as to be advantageous to make
It is standby go out relatively thin graphene oxide humidity sensor, and further improve humidity sensor sensitivity.
Brief description of the drawings
Fig. 1 is humidity sensor structural profile illustration in the prior art
Fig. 2 is the humidity-sensitive material of humidity sensor and the vertical view of interdigital electrode film layer of the preferred embodiment of the present invention
Structural representation
Fig. 3 is the schematic flow sheet of the preparation method of the humidity sensor of the preferred embodiment of the present invention
Fig. 4 a-4e are that the specific steps of the preparation method of the humidity sensor of the preferred embodiment of the present invention are formed
Diagrammatic cross-section
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The humidity sensor of the present invention, including：The substrate of surface insulation, humidity-sensitive material and interdigital electricity positioned at insulating surface
Very thin film layer, humidity-sensitive material are distributed between interdigital electrode, and mutually bonded with interdigital electrode；Humidity-sensitive material is interdigital electrode material
Oxidation state.So, interdigital electrode materials conductive, and the humidity-sensitive material of oxidation state is non-conductive.Here, the substrate of surface insulation can
To be that surface has the Semiconductor substrate of insulating barrier or whole insulated substrate.
The humidity sensor and its manufacture method of the present invention are made below in conjunction with accompanying drawing 2-4e and specific embodiment further
Describe in detail.It should be noted that accompanying drawing uses very simplified form, using non-accurately ratio, and only to convenient, clear
Reach the purpose for aiding in illustrating the present embodiment clearly.
The humidity sensor of the present embodiment includes：Surface has the Semiconductor substrate of insulating barrier, positioned at surface of insulating layer
Graphene oxide humidity-sensitive material and graphene or reduced graphene interdigital electrode film layer, referring to Fig. 2, for the present invention one compared with
The humidity-sensitive material of the humidity sensor of good embodiment and the overlooking the structure diagram of interdigital electrode film layer, graphene oxide 1 divide
It is distributed between reduced graphene or graphene interdigital electrode 2, it is mutually bonded by carbon-carbon bond.Here, graphene oxide and graphene
Or the thickness of reduced graphene is 1-100nm.Substrate can be dielectric substrate or be the Semiconductor substrate that surface has insulating barrier.
Referring to Fig. 3, preparing the method for the humidity sensor in the present embodiment, comprise the following steps：
Step 01：Refer to Fig. 4 a, there is provided the substrate of a surface insulation；
Specifically, in the present embodiment, there is the substrate 401 of insulating barrier 402 using surface, can be sunk on the surface of substrate 401
One layer insulating 402 of product, for example, using one micron of thick silicon dioxide layer of chemical vapor deposition.
Step 02：Fig. 4 b are referred to, one layer of oxidation state humidity-sensitive material is formed in insulating surface；
Specifically, graphene oxide dispersion is spin-coated on into the surface of insulating barrier 402, then drying and processing, obtains one layer of oxygen
The film of graphite alkene 403；The specific process parameter of drying and processing can be set according to actual process requirement, for example, at drying
The temperature of reason can be 60 DEG C, and the time is 30 minutes, and the thickness of the obtained film of graphene oxide 403 is 10nm.
Step 03：Fig. 4 c are referred to, interdigital electrode patterned mask is formed on humidity-sensitive material surface；
Specifically, interdigital electrode patterned mask 404 can be etch layer, or inorganic hardmasks；The present embodiment
In, using photoresist as mask.By in the surface spin coating photoresist of graphene oxide 403, exposure, development and post bake, obtaining
Mask 404 with interdigital electrode pattern, the thickness of mask 404 can be set according to actual process situation, can be here
600nm。
Step 04：Fig. 4 d are referred to, under the protection of interdigital electrode patterned mask, reducing process is carried out to humidity-sensitive material,
Interdigital electrode is formed between humidity-sensitive material；
Specifically, the humidity-sensitive material part that interdigital electrode patterned mask shelters from is not reduced, interdigital electrode patterned mask
Exposed humidity-sensitive material part is reduced into interdigital electrode material；In the present embodiment, the graphene oxide 404 of expose portion changes
For graphene or the graphene oxide of reduction, so as to form interdigital electrode 405；Direct reducer reducing process, microwave can be used
Assisted Reduction method, ultraviolet irradiation reducing process etc..Finally, graphene or the graphene oxide of reduction form interdigital electrode 405, not by
The graphene oxide of reduction forms humidity-sensitive material 403 '.Also, because the two belongs to the same film of graphene oxide 404, therefore,
The thickness of the two is identical.
Step 05：Fig. 4 e are referred to, remove interdigital electrode patterned mask.
Specifically, soaking and rinsing respectively using acetone, isopropanol, deionized water successively, mask 404 is removed completely,
Complete the preparation of humidity sensor.
In summary, humidity sensor of the invention and its manufacture method, graphene oxide is formed on substrate by elder generation
Humidity-sensitive material of the film as humidity sensor, partial oxidation of graphite alkene is then reduced into graphene or the oxidation stone of reduction
Black alkene, so as to form the interdigital electrode of humidity sensor, the thickness of humidity-sensitive material and interdigital electrode in the humidity sensor formed
Degree is consistent, is tightly combined, improves humidity sensor sensitivity；And because graphene oxide film can be made thin, from
And be advantageous to prepare relatively thin graphene oxide humidity sensor, and further improve humidity sensor sensitivity.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrated only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry change and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (10)
- A kind of 1. humidity sensor, it is characterised in that including：Substrate, the surface insulation of the substrate；Humidity-sensitive material and interdigital electrode film layer, it is located at the insulating surface, and humidity-sensitive material and interdigital electrode film layer include The humidity-sensitive material and interdigital electrode of arranged in parallel, the humidity-sensitive material are distributed between the interdigital electrode side wall, and described wet The side wall of quick material and the interdigital electrode side wall are mutually bonded, the consistency of thickness of humidity-sensitive material and interdigital electrode；It is wherein described wet Quick material is the oxidation state of the interdigital electrode material；Humidity-sensitive material is oxidation state, and interdigital electrode is by by oxidation state wet sensitive material Material reduction obtains.
- 2. humidity sensor according to claim 1, it is characterised in that the humidity-sensitive material is graphene oxide, described Interdigital electrode is graphene or the graphene oxide of reduction.
- 3. humidity sensor according to claim 1, it is characterised in that the humidity-sensitive material and interdigital electrode film layer Thickness is 1-100nm.
- 4. humidity sensor according to claim 1, it is characterised in that the substrate is dielectric substrate or is that surface has The Semiconductor substrate of insulating barrier.
- 5. a kind of preparation method of humidity sensor, it is characterised in that comprise the following steps：Step 01：The substrate of one surface insulation is provided；Step 02：One layer of oxidation state humidity-sensitive material is formed in the insulating surface；Step 03：Interdigital electrode patterned mask is formed on the humidity-sensitive material surface；Step 04：Under the protection of interdigital electrode patterned mask, reducing process is carried out to the humidity-sensitive material, in the wet sensitive material Interdigital electrode is formed between material；Wherein, the humidity-sensitive material part that the interdigital electrode patterned mask shelters from is not reduced, institute The humidity-sensitive material part for stating the exposure of interdigital electrode patterned mask is reduced into interdigital electrode material；Step 05：Remove the interdigital electrode patterned mask.
- 6. the preparation method of humidity sensor according to claim 5, it is characterised in that the substrate be dielectric substrate or There is the Semiconductor substrate of insulating barrier for surface.
- 7. the preparation method of humidity sensor according to claim 5, it is characterised in that the oxidation state humidity-sensitive material is Graphene oxide.
- 8. the preparation method of humidity sensor according to claim 7, it is characterised in that in the step 02, the oxygen Graphite alkene is spin-coated on the insulating surface, and processing is then dried.
- 9. the preparation method of humidity sensor according to claim 7, it is characterised in that in the step 04, part institute State graphene oxide and be changed into graphene or the graphene oxide of reduction, so as to form the interdigital electrode.
- 10. the preparation method of humidity sensor according to claim 9, it is characterised in that reduced using direct reducer The part graphene oxide is changed into graphene or the oxygen of reduction by method, Microwave-assisted Reduction method or ultraviolet irradiation reducing process Graphite alkene.
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104958073A (en) * | 2015-07-03 | 2015-10-07 | 深圳市共进电子股份有限公司 | Humidity sensor, electronic device and respiration detection system and method |
| CN104914138A (en) * | 2015-07-03 | 2015-09-16 | 深圳市共进电子股份有限公司 | Humidity sensor, humidity sensor array and preparation method thereof |
| CN105241927B (en) * | 2015-09-25 | 2018-02-27 | 上海集成电路研发中心有限公司 | A kind of humidity sensor and preparation method |
| CN106525910A (en) * | 2016-11-30 | 2017-03-22 | 电子科技大学 | Self-energized humidity sensor and preparation method thereof |
| CN107064242B (en) * | 2017-04-11 | 2020-01-17 | 西南交通大学 | Molybdenum disulfide doped nano silver particle composite humidity sensor and preparation method thereof |
| CN107104078A (en) * | 2017-06-06 | 2017-08-29 | 深圳市华星光电技术有限公司 | Graphene electrodes and its patterning preparation method, array base palte |
| CN108287185B (en) * | 2018-01-09 | 2024-01-12 | 南京信息工程大学 | Sounding humidity sensor, preparation method, sounding humidity measurement system and sounding humidity measurement method |
| CN110793676A (en) * | 2018-08-02 | 2020-02-14 | 北京纳米能源与系统研究所 | Temperature and humidity pressure sensor, preparation method thereof and electronic skin |
| CN112683959B (en) * | 2019-10-17 | 2023-08-18 | 北京石墨烯研究院 | Humidity-sensitive composition, flexible humidity sensor and preparation method thereof |
| CN110687169B (en) * | 2019-11-01 | 2022-06-10 | 电子科技大学 | Humidity-sensitive carbon nano tube/graphene/organic composite flexible material, humidity sensor and preparation method thereof |
| CN111879827A (en) * | 2020-06-15 | 2020-11-03 | 上海集成电路研发中心有限公司 | Flexible sensor structure and preparation method thereof |
| CN114062447B (en) * | 2021-11-30 | 2023-08-18 | 中国工程物理研究院激光聚变研究中心 | Ultrathin humidity-sensitive sensor applied to low-humidity environment and preparation method thereof |
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| CN102680527B (en) * | 2012-05-23 | 2014-03-26 | 哈尔滨工业大学 | Method for preparing graphene gas sensors in batches based on nano soft lithography |
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| US3523244A (en) * | 1967-11-01 | 1970-08-04 | Panametrics | Device for measurement of absolute humidity |
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