CN108063183B - A method of closing porous piezoelectric electret energy accumulator is prepared based on nano impression - Google Patents
A method of closing porous piezoelectric electret energy accumulator is prepared based on nano impression Download PDFInfo
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- CN108063183B CN108063183B CN201711240330.8A CN201711240330A CN108063183B CN 108063183 B CN108063183 B CN 108063183B CN 201711240330 A CN201711240330 A CN 201711240330A CN 108063183 B CN108063183 B CN 108063183B
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000012528 membrane Substances 0.000 claims abstract description 28
- 238000002360 preparation method Methods 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 9
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 6
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940113088 dimethylacetamide Drugs 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000002493 microarray Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000013557 residual solvent Substances 0.000 claims description 3
- 239000000523 sample Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical class CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- MERJTCXDDLWWSK-UHFFFAOYSA-N 1-methylpyrrole pyrrolidin-2-one Chemical compound CN1C=CC=C1.N1C(CCC1)=O MERJTCXDDLWWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/084—Shaping or machining of piezoelectric or electrostrictive bodies by moulding or extrusion
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
A method of closing porous piezoelectric electret energy accumulator is prepared based on nano impression, the preparation and processing of imprint mold is first carried out, then carry out piezo-electric electret thin film preparation, is then imprinted and demoulded, obtain the poroid film of piezo-electric electret;Multiple poroid films are bonded together to form into multilayer closing perforated membrane again;Corona charge is carried out, multilayer closing perforated membrane both ends is finally carried out and sputters working electrode, charge storage strength and stability can be greatly improved in inventive closure hole chamber, and multilayer pore structure can improve power photoelectric transformation efficiency, improve energy accumulator output.
Description
Technical field
The invention belongs to technical field of micro-nano manufacture, and in particular to one kind is stayed based on nano impression preparation closing porous piezoelectric
The method of polar body energy accumulator.
Background technique
With the exploitation of new material and the progress of nano-fabrication technique, flexible electronic technology combines acquirement with nanosecond science and technology
Fast development, electronic device of new generation is towards flexibility, multi-functional, miniaturization, a variety of micro-nano sensings of high sensitivity
Device, flexible light-emitting display, Flexible Transistor Arrays etc. developed in succession, in information interchange, Gernral Check-up, environmental monitoring etc.
Aspect plays a significant role.Meanwhile the quantity of wearable electronic is also growing, the flexible electronic device of these substantial amounts
Sustainable power supply becomes a new challenge.Currently, can be by human motion, mechanical vibration using piezoelectric effect and triboelectric effect
The mechanical energy of the naturally occurrings such as dynamic, fluid is converted into electric energy and powers to flexible device, is expected to realize the self-powered for being not necessarily to external power supply
Dynamic nano-device.Friction nanometer power generator realizes prisoner's energy using friction pair contact separation, needs special encapsulating structure, and
Export it is unstable, be easy influenced by factors such as ambient humidities;Flexible piezoelectric energy accumulator is integral type film shape structure, structure letter
Single, output is stablized, but flexible piezoelectric material internal polarization intensity is not high, is exported limited, it is difficult to effectively driving microelectronic component.It is more
Mechanical energy effectively can be changed into electric energy by the injection charge of long-term preservation in the piezo-electric electret material use hole of hole, in macroscopic view
On show good piezoelectric property, very high polarization intensity can be obtained in material internal by space electret, overcome biography
Piezopolymer of uniting exports not high problem, and structure is simple, flexible, is very suitable to be integrated into from driving flexible electronics system
In, it has broad application prospects.
In order to manufacture porous piezoelectric electret film, most common method is that electret film is increased to material from room temperature
Warm area is melted, is gradually increased the thickness of electret hole film with the raising of heat treatment temperature using pressure expansion,
Space charge is injected into the hole of extruding generation and obtains strong piezoelectricity by further high-voltage corona electret.Such pressure is swollen
Chemical industry skill is usually used in the forming of polypropylene hole film, selective to material, it is difficult to be suitable for other electrets;And technique
It is difficult to effectively control the size of hole, layered distribution is often presented in perforated membrane, and the hole of formation does not form effective closing chamber
Room, therefore the space charge formed after corona polarizing is easy to be influenced output stability by such environmental effects such as humidity.In addition,
Porous structure electret bore hole size, density and distribution mode will affect the springform of inside configuration field distribution and material entirety
Amount, to influence charge-trapping density and power electricity conversion performance.It is more therefore, it is necessary to develop a kind of new electret polymer material
Hole manufacturing process realizes the manufacture of a variety of electret difference closed cell size sizes, optimizes porous electret space charge
Intensity and power photoelectric transformation efficiency are captured, realizes the high efficiency manufacture of flexible high-performance porous piezoelectric electret energy accumulator.
Summary of the invention
In order to overcome the disadvantages of the above prior art, the purpose of the present invention is to provide one kind based on nano impression preparation envelope
Charge storage strength and stability, multilayer can be greatly improved in the method for closing porous piezoelectric electret energy accumulator, blind hole chamber
Pore structure can improve power photoelectric transformation efficiency, improve energy accumulator output.
In order to achieve the above object, the technical scheme adopted by the invention is as follows:
A method of closing porous piezoelectric electret energy accumulator is prepared based on nano impression, comprising the following steps:
The first step, the preparation and processing of imprint mold: imprint mold 1 is made on silicon wafer using the technique of lithography and etching
Make microwell array, carry out low-surface-energy processing, prevents from damaging micro array structure when demoulding;
Second step, piezo-electric electret thin film preparation: substrate 2 uses flexible polyimide film (PI film), is existed using sol evenning machine
2 surface spin coating a layer thickness of substrate is the piezo-electric electret solution of micron level and residual solvent is evaporated on hot plate, is formed
Piezo-electric electret thin film 3;
Third step, coining and demoulding: in an oven, with the pressure of 15Mpa, by the first step, treated that imprint mold 1 is pressed in
On the piezo-electric electret thin film 3 of second step preparation, and oven temperature risen to the molten temperature of piezo-electric electret, 20-40 points
Zhong Hou is cooled to room temperature, and demoulding obtains the poroid film 4 of the piezo-electric electret stayed on substrate 2, then by piezo-electric electret
Poroid film 4 removed from substrate 2, the poroid film 4 of isolated piezo-electric electret;
4th step, multiple poroid films bond together to form multilayer closing perforated membrane: poroid film 4 prepared by multiple third steps
Electret flat membrane 5 with connection encapsulation makes after being heated to electret glass transition temperature after vertical direction alignment
It is bonded with bonder, forms a monolith multilayer and close perforated membrane;
Corona charge: the multilayer closing perforated membrane of 4th step preparation is placed on the enterprising horizontal high voltage of corona equipment 6 and put by the 5th step
Electricity is injected into the porous chamber interior two of closing after air ionization and surveys, forms injection charge;
6th step sputters working electrode 9 at the 5th step treated multilayer closing perforated membrane both ends.
Low-surface-energy is handled in the first step, is to impregnate the silicon fluoride solution of imprint mold 16 hours, and 170 DEG C
Baking 12 hours.
The 5th step mesohigh electric discharge, 7 voltage of high-voltage power supply are adjusted to 20KV, and probe 8 to multilayer closes perforated membrane table
Identity distance is from 5cm.
The piezoelectric electret material is fluorinated ethylene propylene copolymer (FEP), polytetrafluoroethylene (PTFE) (PTFE) or poly- third
Alkene (PP).
The piezo-electric electret solution be by piezo-electric electret, in a solvent with 10% mass concentration dispersion,
It dissolves it sufficiently with magnetic stirrer stirring under water bath to obtain, solvent is n,N-Dimethylformamide, N- methyl pyrrole
Pyrrolidone or dimethyl acetamide.
The invention has the benefit that
It present invention can be suitably applied to a variety of piezoelectric electret materials, nanometer embossing can be accurately controlled hole shape and ruler
It is very little, the manufacture of multilayer closing perforated membrane may be implemented using bonding technology, the stability of injection charge, multilayer closing is greatly improved
Perforated membrane further enhances the flexibility of film entirety, is easier to deform under external force, to improve piezo-electric electret device
Prisoner's energy efficiency of part, closing porous piezoelectric electret energy accumulator prepared by the present invention both can be by diversified forms such as pressure, strains
Mechanical energy be converted to electric energy and give flexible electronic device power supply, realize self actuating system, while can be used as highly sensitive soft
Property sensor, be applied to small power measure, environmental monitoring, the fields such as flexible sensing.
Detailed description of the invention:
Fig. 1 is the structural schematic diagram of imprint mold of the present invention.
Fig. 2 is the schematic diagram that the present invention prepares one layer of piezo-electric electret thin film on substrate.
Fig. 3 is that imprint mold of the present invention is pressed in the schematic diagram on piezo-electric electret thin film.
Fig. 4 is the poroid film schematic diagram of formation piezo-electric electret after present invention demoulding.
Fig. 5 is the seperated schematic diagram from substrate of the poroid film by piezo-electric electret of the invention.
Fig. 6 is that multiple poroid films of the invention bond together to form the schematic diagram that multilayer closes perforated membrane.
Fig. 7 is the schematic diagram that the present invention closes perforated membrane injection charge using high-voltage corona discharge to multilayer.
Fig. 8 is that multilayer of the present invention after electret closes the schematic diagram that perforated membrane both ends prepare electrode.
Specific embodiment
Below in conjunction with attached drawing, the present invention will be described in detail.
A method of closing porous piezoelectric electret energy accumulator is prepared based on nano impression, comprising the following steps:
The first step, the preparation and processing of imprint mold: imprint mold 1 is made on silicon wafer using the technique of lithography and etching
Make microwell array, as shown in Figure 1, being impregnated 6 hours with silicon fluoride solution after the completion, and 170 DEG C of bakings carry out low surface in 12 hours
It can handle, prevent from damaging micro array structure when demoulding;
Second step, piezo-electric electret thin film preparation: substrate 2 uses flexible polyimide film (PI film), is existed using sol evenning machine
2 surface spin coating a layer thickness of substrate is the piezo-electric electret solution of micron level and residual solvent is evaporated on hot plate, is formed
Piezo-electric electret thin film 3, as shown in Figure 2;
Third step, coining and demoulding: in an oven, with the pressure of 15Mpa, by the first step, treated that imprint mold 1 is pressed in
On the piezo-electric electret thin film 3 of second step preparation, and oven temperature risen to the molten temperature of piezo-electric electret, 20-40 points
Zhong Hou is cooled to room temperature, and demoulding, the poroid film 4 for obtaining the piezo-electric electret stayed on substrate 2 connects as shown in Figure 3, Figure 4
The poroid film 4 of piezo-electric electret is removed from substrate 2, the poroid film 4 of isolated piezo-electric electret, such as Fig. 5
It is shown;
4th step, multiple poroid films bond together to form multilayer closing perforated membrane: poroid film 4 prepared by multiple third steps
Electret flat membrane 5 with connection encapsulation makes after being heated to electret glass transition temperature after vertical direction alignment
It is bonded with bonder, forms a monolith multilayer and close perforated membrane, as shown in Figure 6;
Corona charge: the multilayer closing perforated membrane of 4th step preparation is placed on the enterprising horizontal high voltage of corona equipment 6 and put by the 5th step
Electricity, 7 voltage of high-voltage power supply are adjusted to 20KV, and probe 8 to multilayer closes porous film surface distance 5cm, is injected into envelope after air ionization
It closes porous chamber interior two to survey, forms injection charge, as shown in Figure 7;
6th step sputters working electrode 9 at the 5th step treated multilayer closing perforated membrane both ends, as shown in Figure 8.
The piezoelectric electret material is fluorinated ethylene propylene copolymer (FEP), polytetrafluoroethylene (PTFE) (PTFE) or poly- third
Alkene (PP).
The piezo-electric electret solution be by piezo-electric electret, in a solvent with 10% mass concentration dispersion,
It dissolves it sufficiently with magnetic stirrer stirring under water bath to obtain, solvent is n,N-Dimethylformamide, N- methyl pyrrole
Pyrrolidone or dimethyl acetamide.
Present invention employs the method that nano impression and multilayer film are bonded, obtain with the multilayer closing for suppressing electrical effect
Perforated membrane, nano-imprinting method is able to achieve the large area manufacture of the poroid film of piezo-electric electret, and size is controllable, simple to pass through
The poroid Thin-film key synthesizing multilayer for the piezo-electric electret that multiple coinings obtain is closed perforated membrane, space not only may be implemented by Ji
The long-time of injection charge saves, and also can increase the flexibility of multilayer closing perforated membrane, prisoner's energy efficiency is improved, due to such processing work
Skill economy is controllable, and can according to need the preparation for completing different pore sizes, different layers of multilayers closing perforated membrane, very suitable
Conjunction is integrated into wearable flexible sensor and self actuating system.
Claims (5)
1. a kind of method for preparing closing porous piezoelectric electret energy accumulator based on nano impression, which is characterized in that including following
Step:
The first step, the preparation and processing of imprint mold: imprint mold (1) uses the technique of lithography and etching, makes on silicon wafer
Microwell array carries out low-surface-energy processing, prevents from damaging micro array structure when demoulding;
Second step, piezo-electric electret thin film preparation: substrate (2) uses flexible polyimide film (PI film), using sol evenning machine in base
Material (2) surface spin coating a layer thickness is the piezo-electric electret solution of micron level and residual solvent is evaporated on hot plate, is formed
Piezo-electric electret thin film (3);
Third step, coining and demoulding: in an oven, with the pressure of 15Mpa, by the first step, treated that imprint mold (1) is pressed in the
On the piezo-electric electret thin film (3) of two steps preparation, and oven temperature risen to the molten temperature of piezo-electric electret, 20-40 points
Zhong Hou is cooled to room temperature, and demoulding obtains the poroid film (4) of the piezo-electric electret stayed on substrate (2);Then piezoelectricity is stayed
The poroid film (4) of polar body is removed from substrate (2), the poroid film (4) of isolated piezo-electric electret;
4th step, multiple poroid films bond together to form multilayer closing perforated membrane: poroid film (4) prepared by multiple third steps and
Multiple electret flat membranes (5) of encapsulation are connected after vertical direction is alternately arranged alignment, are heated to electret glassy state
It is bonded after inversion temperature using bonder, forms a monolith multilayer and close perforated membrane;
Corona charge: the multilayer closing perforated membrane of 4th step preparation is placed on corona equipment (6) enterprising horizontal high voltage and put by the 5th step
Electricity is injected into the porous chamber interior two sides of closing after air ionization, forms injection charge;
6th step, in the 5th step treated multilayer closing perforated membrane both ends sputtering working electrode (9).
2. a kind of method that closing porous piezoelectric electret energy accumulator is prepared based on nano impression according to claim 1,
It is characterized by: in the first step low-surface-energy handle, be by imprint mold (1) with silicon fluoride solution impregnate 6 hours, and
170 DEG C are toasted 12 hours.
3. a kind of method that closing porous piezoelectric electret energy accumulator is prepared based on nano impression according to claim 1,
It is characterized by: the 5th step mesohigh discharges, high-voltage power supply (7) voltage is adjusted to 20,000 volts, and probe (8) to multilayer is closed
Porous film surface distance 5cm.
4. a kind of method that closing porous piezoelectric electret energy accumulator is prepared based on nano impression according to claim 1,
It is characterized by: the piezoelectric electret material is fluorinated ethylene propylene copolymer (FEP), polytetrafluoroethylene (PTFE) (PTFE) or poly-
Propylene (PP).
5. a kind of method that closing porous piezoelectric electret energy accumulator is prepared based on nano impression according to claim 1,
It is characterized by: the piezo-electric electret solution is by being dispersed in solvent with 10% mass concentration piezo-electric electret
In, it is dissolved sufficiently with magnetic stirrer stirring under water bath and is obtained, and solvent is n,N-Dimethylformamide, N- methyl
Pyrrolidones or dimethyl acetamide.
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CN112002800A (en) * | 2020-09-02 | 2020-11-27 | 哈尔滨工程大学 | Preparation method of composite piezoelectric electret material |
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CN103682081A (en) * | 2012-09-14 | 2014-03-26 | 纳米新能源(唐山)有限责任公司 | Piezoelectric electret film and preparation method thereof |
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