CN107356637A - The manufacture method of environmental sensor and the environmental sensor manufactured using this method - Google Patents
The manufacture method of environmental sensor and the environmental sensor manufactured using this method Download PDFInfo
- Publication number
- CN107356637A CN107356637A CN201710434366.3A CN201710434366A CN107356637A CN 107356637 A CN107356637 A CN 107356637A CN 201710434366 A CN201710434366 A CN 201710434366A CN 107356637 A CN107356637 A CN 107356637A
- Authority
- CN
- China
- Prior art keywords
- metal film
- layer
- film layer
- environmental sensor
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/226—Construction of measuring vessels; Electrodes therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/227—Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Electrochemistry (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The environmental sensor that the present invention is provided a kind of manufacture method of environmental sensor and manufactured using this method, comprises the following steps：Step 1, detection device is prepared in silicon chip substrate；Step 2, Thermosensor, gas sensitive device and wet sensitive device are prepared on detection device and forms TEMP area, gas sensing area and wet sensitive sensing unit；Step 3, encapsulate.Compared with prior art, beneficial effects of the present invention are as follows：Using traditional semiconductor process technique the thin-film metallic oxide gas sensing resistance of nanometer scale and the humicap of high polymer material, and the diode extremely sensitive to temperature is made on same silicon chip, while produces gas and humidity temperature pickup.Therefore, the data of gas can improve gasmetry precision by temperature humidity data correction.The cost of product, volume and power consumption can be reduced simultaneously.
Description
Technical field
The present invention relates to a kind of manufacture method of sensor, the manufacture method of particularly a kind of environmental sensor and use
The environmental sensor of this method manufacture.
Background technology
When being studied more with the sensor of metal oxide detection gas, related patent also has application and authorized.
But because gas-sensitive property is relevant with humidity and temperature, if accurately to be detected using the gas-sensitive property of metal oxide resistor
Gas is, it is necessary to accurate measuring environment humidity and temperature.Thus it is common to use person must use two in a system equipment
Body, a humidity and temperature sensor and a gas sensor.Or the class sensing unit of temperature humidity gas three is distinguished
It is made on two different chips, is encapsulated in by the method for folded envelope in same encapsulation.The quality of environment and the life of people
It is closely bound up with work comfort degree, health.In recent years, with requirement more and more higher of the people to environment, it is desirable to have
It is simple and reliable, cheap method and the quality of Product checking surrounding air, such as carbon monoxide, imflammable gas, second
Alcohol, NO2Deng discomfort or the aerial content of toxic gas.But measure gas using metal oxide gas sensing resistance
Body, its precision are influenceed by ambient humidity.
The content of the invention
For in the prior art the defects of, it is an object of the invention to provide one kind to reduce volume, reduces cost, improves production
The manufacture method and the environmental sensor using this method manufacture of the reliability of product and the environmental sensor of measurement accuracy.
In order to solve the above technical problems, the present invention provides a kind of manufacture method of environmental sensor, comprise the following steps：
Step 1, detection device is prepared in silicon chip substrate；
Step 2, Thermosensor, gas sensitive device and wet sensitive device are prepared on detection device and forms TEMP area, gas
Quick sensing unit and wet sensitive sensing unit；
Step 3, encapsulate.
Preferably, step 2 includes：
Step 2.1, the 4th oxide layer is deposited on detection device, is provided with the 4th oxide layer through the 4th oxide layer
First contact hole, the first contact is filled in the first contact hole；
Step 2.2, the 4th metal film layer is deposited with physical vaporous deposition in the 4th oxide layer, the first contact connects
Connect the 4th metal film layer and third layer metal film layer；
Step 2.3, photoetching and dry etching are carried out to the 4th metal film layer, carve adding thermal resistance layer pattern,；
Step 2.4, in the 4th metal film layer plasma enhanced chemical vapor deposition method deposit silicon nitride layer；
Step 2.5, photoetching and dry etching are carried out to silicon nitride layer, the through silicon nitride layer is opened up on silicon nitride layer
Two contact holes, the second contact is filled in the second contact hole；
Step 2.6, fifth metal film layer, the connection of the second contact are deposited with physical vaporous deposition on silicon nitride layer
Fifth metal film layer with the 4th metal film layer；
Step 2.7, the 6th metal film layer is deposited with physical vaporous deposition in fifth metal film layer；
Step 2.8, the fifth metal film layer to gas sensing area and the 6th metal film layer carry out photoetching and dry method is carved
Erosion, the first figure is carved in fifth metal film layer and the 6th metal film layer；
Step 2.9, photoetching and dry etching are carried out to the 6th metal film layer in gas sensing area, in the 6th metallic film
Second graph is carved on layer；
Step 2.10, plasma enhanced chemical vapor deposition is used in fifth metal film layer and the 6th metal film layer
Method silicon oxide deposition layer；
Step 2.11, the coating photoresist on silicon oxide layer；
Step 2.12, on the silicon oxide layer in gas sensing area with photoetching open up through photoresist, silicon oxide layer the 3rd
Contact hole；
Step 2.13, face deposits metallic oxide film with physical vaporous deposition on a photoresist；
Step 2.14, photoresist is removed using solvent, the metallic oxide film in the 3rd contact hole forms gas
Quick resistance；
Step 2.15, vacuum bakeout is carried out, crystallizes metallic oxide film；
Step 2.16, humidity sensing polymer materials are coated with the silicon oxide layer of wet sensitive sensing unit；
Step 2.17, the figure of humicap is made with photoetching in humidity sensing polymer materials；
Step 2.18, vacuum bakeout is carried out, solidifies humidity sensing polymer materials；
Step 2.19, photoetching and dry etching are carried out to the silicon oxide layer in TEMP area, formed through silicon oxide layer
4th contact hole；
Step 2.20, one end of connecting line is stretched into the 4th contact hole and is connected with the 6th metal film layer.
Preferably, the thickness of the 4th metal film layer is 200 nanometers~1 micron, and the material of the 4th metal film layer is gold
Belong to tungsten or tungsten-titanium alloy；The thickness of fifth metal film layer is 100 nanometers~1 micron, and the material of fifth metal film layer is gold
Belong to tungsten or tungsten-titanium alloy；The thickness of 6th metal film layer is 100 nanometers~3 microns, and the material of the 6th metal film layer is gold
Belong to aluminium or aluminium copper.
Preferably, the resistance of heating resistor layer is 20 ohm~200 ohm.
Preferably, the thickness of silicon nitride layer is 10 nanometers~200 nanometers.
Preferably, the thickness of silicon oxide layer is 100 nanometers~500 nanometers.
Preferably, the thickness of photoresist is 500 nanometers~2 microns.
Preferably, the thickness of metallic oxide film is 100 nanometers to 800 nanometers, the material of metallic oxide film
Matter is SnO2、ZnO、TiO2Or the gas sensitive mixed by Fe, Zn, Pt, Pd element.
Preferably, in step 15, the temperature of vacuum bakeout is 300 DEG C~500 DEG C, and the time is 10 minutes~4 hours.
Preferably, in step 18, the temperature of vacuum bakeout is 300 DEG C~400 DEG C, and the time is 10 minutes~4 hours.
A kind of environmental sensor, the sensor are manufactured using the manufacture method of environmental sensor.
Compared with prior art, beneficial effects of the present invention are as follows：Nanometer is measured using traditional semiconductor process technique
The thin-film metallic oxide gas sensing resistance of level and the humicap of high polymer material, and the diode extremely sensitive to temperature
It is made on same silicon chip, while produces gas and humidity temperature pickup.Therefore, the data of gas can be wet by temperature
Degrees of data amendment, improve gasmetry precision.The cost of product, volume and power consumption can be reduced simultaneously.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, further feature of the invention
Objects and advantages will become more apparent upon.
Fig. 1 is the manufacture method schematic diagram one of environmental sensor of the present invention；
Fig. 2 is the manufacture method schematic diagram two of environmental sensor of the present invention；
Fig. 3 is the manufacture method schematic diagram three of environmental sensor of the present invention；
Fig. 4 is the manufacture method schematic diagram four of environmental sensor of the present invention；
Fig. 5 is the manufacture method schematic diagram five of environmental sensor of the present invention；
Fig. 6 is the manufacture method schematic diagram six of environmental sensor of the present invention；
Fig. 7 is the manufacture method schematic diagram seven of environmental sensor of the present invention；
Fig. 8 is the manufacture method schematic diagram eight of environmental sensor of the present invention；
Fig. 9 is the manufacture method schematic diagram nine of environmental sensor of the present invention.
Embodiment
With reference to specific embodiment, the present invention is described in detail.Following examples will be helpful to the skill of this area
Art personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that to the common of this area
For technical staff, without departing from the inventive concept of the premise, some changes and improvements can also be made.These are belonged to
Protection scope of the present invention.
As shown in Fig. 1~Fig. 9, the manufacture method of environmental sensor of the present invention, including：Step 1：With tradition on silicon chip 1
Semiconductor technology manufacture diode and integrated circuit, to detection chip and the temperature of environment.Circuit uses 3 layers of metal
Wiring, respectively the first metal film layer 2, the second metal film layer 3, the 3rd metal film layer 4, it is big to complete later circuit
Part is oxidized the dielectric overlay of layer 10, and the only region of the first contact hole of small part 27 exposes the 3rd metal film layer 4, is used for
Connected with follow-up humidity with gas sensor.After this partial circuit completes manufacture, can with independent measurement and pio chip and
The temperature of environment, as shown in Figure 1.
Step 2：The 4th metal film layer 11 is deposited with PVD, for thickness between 200 nanometers to 1 micron, material can
Think tungsten, or tungsten-titanium alloy, or other refractory metals.The all surfaces of this layer of metal covering silicon chip, except in few portion
Dividing has beyond the region of the first contact hole 27, and largely isolates with the 3rd following metal film layer 4.Only connect first
Contact hole 27, the 4th metal film layer 11 are connected by the first contact with third layer metal film layer 4.
Step 3：Photoetching and dry etching are done, the adding thermal resistance layer pattern of strip is carved to the 4th metal film layer 11,
Resistance value is between 20 ohm to 200 ohm, as shown in Figure 2.
Step 4：With PECVD methods on the 4th metal film layer 11 deposition silicon nitride film 12, thickness at 10 nanometers extremely
Between 200 nanometers.
Step 5：Photoetching and dry etch process are done on the silicon nitride film 12, outputs the second contact hole 22.
Step 6：Layer 5 metal film layer 13 is deposited with PVD on silicon nitride layer 12, thickness is at 100 nanometers to 1
Between micron, material can be tungsten, or tungsten-titanium alloy, or other refractory metals.In some places, layer 5 gold
Belong to film layer 13 and cover the second contact hole 22, and be connected by the second contact with the 4th metal film layer 11 of its bottom.
Step 7：Layer 6 metal film layer 14 is deposited with PVD on layer 5 metal film layer 13, thickness exists
Between 200 nanometers to 3 microns, material can be metallic aluminium, or aluminium copper etc..The layer 6 metal film layer 14 covers completely
Following layer 5 metal film layer 13 is covered, and layer 5 metal film layer 13 is connected in electricity meaning.
Step 8：Photoetching and dry etching are done, to layer 6 metal film layer 14 and layer 5 metal film layer 13 simultaneously
The first figure 15 is carved, etching stopping is on silicon nitride layer 12, as shown in Figure 3.
Step 9：Photoetching and dry etching are done, second graph 16 is carved to layer 6 metal film layer 14, etching stopping exists
On layer 5 metal film layer 13.After removing photoresist, part layer 5 metal film layer 13 and whole layer 6 metallic films
Layer 14, which exposes, to be come.Expose the layer 6 metal film layer 14 come and divide three regions：A part is gas sensing resistance area 24, shape
Shape is interdigitated, and interdigital both ends do not connect, and are subsequently covered by gas sensitive, forms gas sensing resistance；A part is humicap area
25, shape is also interdigitated, and interdigital both ends do not connect, and are subsequently covered by humidity-sensitive material, forms humicap.Third portion is temperature
Sensor region 3 is spent, as shown in Figure 4.
Step 10：Oxidation is deposited on layer 5 metal film layer 13 and layer 6 metal film layer 14 with pecvd process
Silicon layer 30, thickness is between 100 nanometers to 500 nanometers.
Step 11：Coating photoresist 21, does photoetching, makes the 3rd contact hole 20.
Step 12：Using the silicon oxide layer 30 under the contact hole 20 of dry or wet etch the 3rd, aoxidized for follow-up metal
Thing stripping technology is prepared, and etching stopping is on silicon nitride layer 12.The thickness of photoresist 21 between 500 nanometers to 2 microns,
As shown in Figure 5.
Step 13：With PVD method deposit metallic oxide film 7 on photoresist 21, thickness is at 100 nanometers
To between 800 nanometers, material can be SnO2, ZnO, TiO2Deng gas sensitive, or mixed by elements such as Fe, Zn, Pt, Pd
Such gas sensitive, as shown in Figure 6.
Step 14：Photoresist 21 is removed using solvent, the contact of gas-sensitive metal sull covering the 3rd stayed
Hole 20, form gas sensing resistance.
Step 15：Vacuum bakeout is done at a certain temperature, metal oxide is crystallized the gas to form required stability characteristic (quality)
Quick resistance.For baking temperature in 300C between 500C, the time is between 10 minutes to 4 hours.During baking, layer 6 metal
Film layer 14 by silicon oxide layer 30 protection, as shown in Figure 7.
Step 16：It is coated with humidity sensing polymer materials 18.
Step 17：Photoetching is done, makes the figure of humicap.
Step 18：Vacuum bakeout is done at a certain temperature, solidifies humidity sensing polymer materials.Baking temperature is in 300C
To between 400C, the time is between 10 minutes to 4 hours.During baking, layer 6 metal film layer 14 is by silicon oxide layer 30
Protection, as shown in Figure 8.
Step 19：Photoetching is done, dry etching silicon oxide layer 30, obtains the 4th contact hole 19, layer 6 metal film layer 14
It is exposed.
Step 20：In gas sensor unit area 24, two electrodes 28 of gas sensing resistance and two electrodes 29 of metal heating thin films
Connected by the first contact hole 27 and the second contact hole 22 with the 3rd metal film layer 4 and following integrated circuit, as
The data input of gas sensing resistance.
Step 21：In wet sensitive cellular zone 25, the two end electrodes 26 of humicap pass through the second contact hole 22 and the first contact
Hole 27 is connected with the 4th metal film layer 11 and the 3rd metal film layer 4 and following integrated circuit, as humicap
Data input.
Step 22：The 6th layer of metal electrode is welded to envelope with the standard metal copper or gold solder connecting line of semiconductor-sealing-purpose
Load onto.So far, the invention of the Multifunction Sensor integrated circuit of integrated gas, humidity and temperature sensor one completes,
As shown in Figure 9.
Present invention also offers the environmental sensor that a kind of manufacture method using above-mentioned environmental sensor manufactures.
The specific embodiment of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make a variety of changes or change within the scope of the claims, this not shadow
Ring the substantive content of the present invention.In the case where not conflicting, the feature in embodiments herein and embodiment can any phase
Mutually combination.
Claims (10)
1. a kind of manufacture method of environmental sensor, it is characterised in that comprise the following steps：
Step 1, detection device is prepared in silicon chip substrate；
Step 2, Thermosensor, gas sensitive device and wet sensitive device are prepared on detection device and forms TEMP area, air-sensitive passes
Sensillary area and wet sensitive sensing unit；
Step 3, encapsulate.
2. the manufacture method of environmental sensor according to claim 1, it is characterised in that step 2 includes：
Step 2.1, the 4th oxide layer is deposited on detection device, first through the 4th oxide layer is provided with the 4th oxide layer
Contact hole, the first contact is filled in the first contact hole；
Step 2.2, the 4th metal film layer, the first contact connection the are deposited with physical vaporous deposition in the 4th oxide layer
Four metal film layers and third layer metal film layer；
Step 2.3, photoetching and dry etching are carried out to the 4th metal film layer, carves adding thermal resistance layer pattern；
Step 2.4, in the 4th metal film layer plasma enhanced chemical vapor deposition method deposit silicon nitride layer；
Step 2.5, photoetching and dry etching are carried out to silicon nitride layer, opens up on silicon nitride layer and connect through the second of silicon nitride layer
Contact hole, the second contact is filled in the second contact hole；
Step 2.6, fifth metal film layer, the second contact connection the 5th are deposited with physical vaporous deposition on silicon nitride layer
Metal film layer with the 4th metal film layer；
Step 2.7, the 6th metal film layer is deposited with physical vaporous deposition in fifth metal film layer；
Step 2.8, the fifth metal film layer to gas sensing area and the 6th metal film layer carry out photoetching and dry etching,
The first figure is carved on fifth metal film layer and the 6th metal film layer；
Step 2.9, photoetching and dry etching are carried out to the 6th metal film layer in gas sensing area, on the 6th metal film layer
Carve second graph；
Step 2.10, formed sediment in fifth metal film layer and the 6th metal film layer with plasma enhanced chemical vapor deposition method
Product silicon oxide layer；
Step 2.11, the coating photoresist on silicon oxide layer；
Step 2.12, the 3rd contact through photoresist, silicon oxide layer is opened up with photoetching on the silicon oxide layer in gas sensing area
Hole；
Step 2.13, face deposits metallic oxide film with physical vaporous deposition on a photoresist；
Step 2.14, photoresist is removed using solvent, the metallic oxide film in the 3rd contact hole forms air-sensitive electricity
Resistance；
Step 2.15, vacuum bakeout is carried out, crystallizes metallic oxide film；
Step 2.16, humidity sensing polymer materials are coated with the silicon oxide layer of wet sensitive sensing unit；
Step 2.17, the figure of humicap is made with photoetching in humidity sensing polymer materials；
Step 2.18, vacuum bakeout is carried out, solidifies humidity sensing polymer materials；
Step 2.19, photoetching and dry etching are carried out to the silicon oxide layer in TEMP area, forms the through silicon oxide layer the 4th
Contact hole；
Step 2.20, one end of connecting line is stretched into the 4th contact hole and is connected with the 6th metal film layer.
3. the manufacture method of environmental sensor according to claim 1, it is characterised in that the thickness of the 4th metal film layer
For 200 nanometers~1 micron, the material of the 4th metal film layer is tungsten or tungsten-titanium alloy；
The thickness of fifth metal film layer is 100 nanometers~1 micron, and the material of fifth metal film layer is closed for tungsten or tungsten titanium
Gold；
The thickness of 6th metal film layer is 100 nanometers~3 microns, and the material of the 6th metal film layer is closed for metallic aluminium or aluminum bronze
Gold.
4. the manufacture method of environmental sensor according to claim 1, it is characterised in that the resistance of heating resistor layer is 20
Ohm~200 ohm.
5. the manufacture method of environmental sensor according to claim 1, it is characterised in that the thickness of silicon nitride layer is received for 10
Rice~200 nanometers.
6. the manufacture method of environmental sensor according to claim 1, it is characterised in that the thickness of silicon oxide layer is 100
Nanometer~500 nanometers.
7. the manufacture method of environmental sensor according to claim 1, it is characterised in that the thickness of photoresist is received for 500
Rice~2 microns.
8. the manufacture method of environmental sensor according to claim 1, it is characterised in that the thickness of metallic oxide film
Spend for 100 nanometers to 800 nanometers, the material of metallic oxide film is SnO2、ZnO、TiO2Or by Fe, Zn, Pt, Pd member
The gas sensitive that element mixes.
9. the manufacture method of environmental sensor according to claim 1, it is characterised in that in step 15, vacuum bakeout
Temperature is 300 DEG C~500 DEG C, and the time is 10 minutes~4 hours；
In step 18, the temperature of vacuum bakeout is 300 DEG C~400 DEG C, and the time is 10 minutes~4 hours.
10. a kind of environmental sensor, it is characterised in that the sensor is using the environment described in claim 1 to 9 any one
The manufacture method manufacture of sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710434366.3A CN107356637A (en) | 2017-06-09 | 2017-06-09 | The manufacture method of environmental sensor and the environmental sensor manufactured using this method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710434366.3A CN107356637A (en) | 2017-06-09 | 2017-06-09 | The manufacture method of environmental sensor and the environmental sensor manufactured using this method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107356637A true CN107356637A (en) | 2017-11-17 |
Family
ID=60273778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710434366.3A Pending CN107356637A (en) | 2017-06-09 | 2017-06-09 | The manufacture method of environmental sensor and the environmental sensor manufactured using this method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107356637A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110726758A (en) * | 2019-09-26 | 2020-01-24 | 华南理工大学 | Gas-sensitive detection module, manufacturing method and system |
| CN111044582A (en) * | 2019-12-04 | 2020-04-21 | 中国工程物理研究院化工材料研究所 | Fluorocarbon film/metal oxide gas-sensitive film composite laminated device and preparation method thereof |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374886A (en) * | 2014-12-17 | 2015-02-25 | 哈尔滨理工大学 | B-cemented semiconductor-heating temperature and humidity self-compensation integrated gas sensor |
| CN105300540A (en) * | 2015-09-22 | 2016-02-03 | 上海申矽凌微电子科技有限公司 | Manufacturing method of integrated all-in-one temperature and humidity sensor chip |
| CN105928567A (en) * | 2016-07-13 | 2016-09-07 | 中国电子科技集团公司第四十九研究所 | Silicon-based gas sensitive chip of integrated humiture sensor and manufacturing method thereof |
| CN106082102A (en) * | 2016-07-12 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | The sensor circuit manufacture method of integrated temperature humidity gas sensing and sensor |
| CN106093138A (en) * | 2016-06-21 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | By manufacture method and the sensor of the sensor of metal-oxide detected gas |
| CN106124576A (en) * | 2016-06-28 | 2016-11-16 | 上海申矽凌微电子科技有限公司 | Integrated humidity sensor and multiple-unit gas sensor and manufacture method thereof |
-
2017
- 2017-06-09 CN CN201710434366.3A patent/CN107356637A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374886A (en) * | 2014-12-17 | 2015-02-25 | 哈尔滨理工大学 | B-cemented semiconductor-heating temperature and humidity self-compensation integrated gas sensor |
| CN105300540A (en) * | 2015-09-22 | 2016-02-03 | 上海申矽凌微电子科技有限公司 | Manufacturing method of integrated all-in-one temperature and humidity sensor chip |
| CN106093138A (en) * | 2016-06-21 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | By manufacture method and the sensor of the sensor of metal-oxide detected gas |
| CN106124576A (en) * | 2016-06-28 | 2016-11-16 | 上海申矽凌微电子科技有限公司 | Integrated humidity sensor and multiple-unit gas sensor and manufacture method thereof |
| CN106082102A (en) * | 2016-07-12 | 2016-11-09 | 上海申矽凌微电子科技有限公司 | The sensor circuit manufacture method of integrated temperature humidity gas sensing and sensor |
| CN105928567A (en) * | 2016-07-13 | 2016-09-07 | 中国电子科技集团公司第四十九研究所 | Silicon-based gas sensitive chip of integrated humiture sensor and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110726758A (en) * | 2019-09-26 | 2020-01-24 | 华南理工大学 | Gas-sensitive detection module, manufacturing method and system |
| CN111044582A (en) * | 2019-12-04 | 2020-04-21 | 中国工程物理研究院化工材料研究所 | Fluorocarbon film/metal oxide gas-sensitive film composite laminated device and preparation method thereof |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10317357B2 (en) | Integrated multi-sensor module | |
| EP2720034B1 (en) | Integrated Circuit comprising a relative humidity sensor and a thermal conductivity based gas sensor | |
| US4902138A (en) | Measuring component concentration in a gas blend | |
| CN105264365B (en) | It is integrated into the capacitive sensor and its manufacturing method of semi-conductor electricity road | |
| US8884382B2 (en) | Multi-Dimensional sensors and sensing systems | |
| US20070209433A1 (en) | Thermal mass gas flow sensor and method of forming same | |
| RU2556751C2 (en) | Sensor and method of its manufacturing | |
| WO2018176548A1 (en) | Manufacturing method for humidity sensor, and humidity sensor manufactured by using method | |
| US20070062812A1 (en) | Gas sensor and method for the production thereof | |
| CN106093138B (en) | Pass through the manufacturing method and sensor of the sensor of metal oxide detection gas | |
| CN107356637A (en) | The manufacture method of environmental sensor and the environmental sensor manufactured using this method | |
| EP1434048A1 (en) | CAPACITIVE HUMIDITY−SENSOR AND CAPACITIVE HUMIDITY−SENSOR MANUFACTURING METHOD | |
| Graf et al. | CMOS microhotplate sensor system for operating temperatures up to 500 C | |
| CN106124576B (en) | Integrated humidity sensor and multiple-unit gas sensor and its manufacturing method | |
| CN107192744A (en) | The manufacture method of gas sensing resistance and the gas sensor manufactured using this method | |
| US9234859B2 (en) | Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology | |
| CN110108762A (en) | A kind of humidity sensor and its manufacturing method | |
| CN1043987A (en) | A kind of warm and humid difunctional sensitive film element and manufacture method thereof | |
| CN106082102B (en) | The sensor circuit manufacture method and sensor of integrated temperature humidity gas sensing | |
| CN108107081B (en) | Method for manufacturing gas sensor and gas sensor manufactured thereby | |
| JPH02150754A (en) | Production of sensitive element | |
| CN106158743B (en) | Utilize the manufacturing method of the sensor of more inducing pixels detection multiple gases | |
| JPS59131152A (en) | Reducing gas sensor | |
| CN107607152B (en) | Method for manufacturing sensor and sensor | |
| CN205508820U (en) | Environmental sensor , Integrated device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171117 |
|
| RJ01 | Rejection of invention patent application after publication |