CN1043987A - A kind of warm and humid difunctional sensitive film element and manufacture method thereof - Google Patents
A kind of warm and humid difunctional sensitive film element and manufacture method thereof Download PDFInfo
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- CN1043987A CN1043987A CN90105203.5A CN90105203A CN1043987A CN 1043987 A CN1043987 A CN 1043987A CN 90105203 A CN90105203 A CN 90105203A CN 1043987 A CN1043987 A CN 1043987A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229920001721 polyimide Polymers 0.000 claims abstract description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010936 titanium Substances 0.000 claims abstract description 22
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004411 aluminium Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000012360 testing method Methods 0.000 claims abstract description 5
- 239000000428 dust Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000001723 curing Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims 4
- 210000002683 foot Anatomy 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 41
- 230000004044 response Effects 0.000 abstract description 7
- 239000004642 Polyimide Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- 238000012271 agricultural production Methods 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000007726 management method Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 208000011580 syndromic disease Diseases 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A kind of by Kapton capacitive moisture sensor and aluminium, titanium thermometal sheet resistance formula temperature sensing element in conjunction with the temperature of forming, wet difunctional sensitive film element.This is a first growth layer of silicon dioxide on the silicon substrate surface, uses thin-film technique then, various films such as the titanium of deposit successively, aluminium, polyimide, gold on silicon dioxide insulating layer, and make film form fine pattern with mask plate.The temperature and humidity of same point in this sensitive element energy while testing environment, and it is wide to have measurement range, the linearity is good, does not need characteristics such as heated wash, response is fast, volume is little.In industrial and agricultural production, storage, management and daily life, have wide application prospects.
Description
The present invention relates to a kind of temperature, wet difunctional sensitive film element and manufacture method thereof, belong to electronic measuring technology field by aluminium, titanium sheet resistance formula temperature sensing element and Kapton capacitive moisture sensor be combined into.
To the detection of temperature and humidity, there is employing warm, the difunctional thin film sensor that wets in the prior art.U.S. Pat 4603372 has been described a kind of temperature or humidity film sensor and manufacture method thereof.This sensor is to have made a copper sheet resistance formula temperature sensing element and a thin polymer film capacitive moisture sensor on same bar printing wiring board substrate, and the former crooked strip resistive band is the double as latter's a pole plate also.The shortcoming of this sensor is to detect temperature and humidity simultaneously, can only be at one time in otherwise as temperature sensing element, or use as humidity-sensitive element; Size is bigger, is difficult to stretch into little space detected temperatures or humidity; Manufacturing process and integrated circuit technology are incompatible fully, are unfavorable for producing in batches and can't continue to be developed to the temperature that has integrated circuit, wet difunctional thin film sensor.Chinese patent CN 88102279.9 has described a kind of film resistor temperature sensor and manufacture method thereof.This sensor is made temperature sensing element with crooked strip titanium, aluminium thin-film electro stopband, makes with integrated circuit technology, but can not detect humidity.
The object of the present invention is to provide a kind of novel temperature, wet difunctional sensitive film element and manufacture method thereof.This sensitive element is on Chinese patent CN 88102279.9 described patented technology bases, titanium, aluminium film resistor temperature sensor and Kapton formula humidity-sensitive element are integrated formation, volume is small and exquisite, simultaneously the temperature and humidity of same point in the testing environment.
Description of drawings:
Fig. 1. the structure of temperature, wet difunctional sensitive film element chip and local Jie are cutd open figure, 1 silicon chip wherein, 2 silicon dioxide insulating layers, 3 titanium films, 4 aluminium films, 5 polyimide films, 6 gold medal films, 7 lead-in wires, 8 bottom electrode I, 9 bottom electrode II, 10 top electrodes, 11 substrates.
Fig. 2. the wet quick characteristic of the electric capacity-relative humidity (C-%RH) of temperature, wet difunctional sensitive film element.
Fig. 3. resistance-temperature (R-T) temperature-sensing property of temperature, wet difunctional sensitive film element.
The wet response characteristic of the sense of Fig. 4 temperature, wet difunctional sensitive film element.
Fig. 5, the temperature-sensitive response characteristic of temperature, wet difunctional sensitive film element.
Fig. 6, the sense damp-warm syndrome degree characteristic of temperature, wet difunctional sensitive film element.
The structure of sensitive element chip of the present invention is two aluminium, the titanium bilayer film bottom electrode of deposit humicap on silicon dioxide insulating layer 2, and one is the bottom electrode II 9 of crooked strip, and it is the resistive band of temperature sensing element simultaneously; Another is the bottom electrode I 8 of interdigitated. Be deposited with one layer of very thin golden film 6 at polyimides film 5, after the etching as top electrode 10. Top electrode 10 respectively forms a capacitor with bottom electrode I 8, bottom electrode II 9 respectively, and two electric capacity are together in series by top electrode 10. The hygrometric scope is 0-100%RH, and temperature-measuring range is positive 150 ℃ of negative 50-, and the linearity is good, response is fast, and needn't heated wash.
Implementation method of the present invention is: in the high-temperature oxydation stove, be that the silicon dioxide insulating layer 2 of 6000-10000 dust is as substrate 11,10 with thermal oxidation method at the superficial growth thickness at least on one side of polished silicon substrate 1
-5-10
-6In the vacuum chamber of torr, on silicon dioxide insulating layer 2, all be higher than 99.97% titanium and aluminum metallic material and be heated by resistive evaporation, electron beam evaporation or sputtering method elder generation deposit one deck titanium film 3, the film of deposit layer of aluminum again 4 on the titanium film 3 of institute's deposit subsequently with purity.Silicon chip 1 is heated to 100-350 ℃ when deposit titanium, aluminium film, and deposition speed is controlled between the per second 3-25 dust.The thickness of titanium film 3 is the 500-700 dust, and the thickness of aluminium film 4 is the 4000-7000 dust.Resist coating exposes with the metal pattern mask subsequently, erodes unnecessary photoresist with wet method (or dry method), forms the crooked strip resistive band bottom electrode II 9 of mask and the fine pattern of interdigitated bottom electrode I 8.Under the protection of photoresist; till revealing to titanium film 5 with phosphoric acid solution etching aluminium film 4; again with rare hydrofluoric acid etch titanium film 5 until forming a crooked strip resistive band; as bottom electrode II 9 and another interdigited electrode; as bottom electrode I 8; their width is 4-6 μ m, and the length breadth ratio of resistive band is (1.2-1.9) * 10
4Width etching error is no more than ± 1 μ m.The bonding pin that an external lead wire is respectively arranged at the two ends of bottom electrode II 9 also has a bonding pin at edge, bottom electrode I 8 middle part.The resistance value of aluminium, titanium double-layer metal film is 600-1300 Ω, resistance positive temperature coefficient about+4200 * 10
-6/ ℃, maximum nonlinearity is less than 0.5% in the positive 150 ℃ temperature-measuring range of negative 50-.Then coating polyimide glue is evenly distributed polyimide glue with lacquering technique, and THICKNESS CONTROL is at the 3000-6000 dust.Resist coating carries out alignment and exposure with the polyimide pattern mask to existing metal superfine pattern on silicon dioxide insulating layer 2 subsequently.Etch away unnecessary photoresist with wet method (or dry method) photoetching or plasma etching technology, form the rectangular patterns of mask, it is of a size of 1.4 * 1.3mm.Under the photoresist protection, fall unnecessary polyimide with dry etching, the polyimide film 5 that stays rectangle covers in bottom electrode II 9 and bottom electrode I 8, vacates three bonding pin.Sintering curing in purity is the high temperature furnace of 99.99% nitrogen subsequently, temperature is 250-300 ℃, the time is 1 hour.Then 10
-5-10
-6In the vacuum chamber of torr, on the polyimide film 5 that solidifies, be heated by resistive evaporation method, electron-beam vapor deposition method, or sputtering method deposit one deck purity is higher than 99.97% golden film 6.Silicon chip 1 temperature is 100-200 ℃ during deposit gold film 6, and deposition rate is controlled between the per second 3-25 dust.The thickness of gold film 6 is the 250-500 dust.Resist coating more subsequently, with golden film mask the polyimide film 5 that has been shaped is carried out alignment and exposure, erode unnecessary photoresist with wet method (or dry method), form the rectangle gold film that the edge is slightly less than polyimide film 5 edges, its undersized is in 1.4 * 1.3mm, as top electrode 10.Then remove photoresist, scribing becomes the chip of required temperature, wet difunctional sensitive element.With conducting resinl die bonding in the metal base, sintering is firm in about 200 ℃ temperature again.With the key presser feet of Si-Al wire 7 bonding chips and the outer lead of base, it is electrically connected.Detect qualified sensitive element,, carry out burin-in process at last with the pipe cap soldering and sealing that bleeder vent is arranged.
The present invention compared with prior art has following characteristics:
Hygrometric, temperature-measuring range is wide, performance good.
Hygrometric scope 0-100%RH
Positive 150 ℃ of the negative 50-of temperature-measuring range
Humidity measurement precision ± 3%RH(25 ℃)
Temperature measurement accuracy ± 0.5 ℃
Wet-sensitive sensitivity 0.1PF/%RH
Temperature coefficient for humidity is born 0.16%RH/ ℃ (5-50 ℃)
Wet response time＜16 second (90% range) of sense
Temperature-sensitive response time＜16 second (63% range)
Compact conformation, volume is little, processing is simple and easy.
Adopt integration mode that humidity-sensitive element and temperature sensing element are combined.Chip volume is 1.6 * 1.6 * 0.4mm.Only need thin-film technique, needn't carry out microfabrication silicon chip; Be easy to draw outer lead, technology is easy.
3. stable performance, reliable.
The characteristics of Kapton humidity-sensitive element are not to be afraid of airborne pollution, needn't heated wash.Polyimide film has played the passivation protection effect to aluminium, titanium film temperature sensing element simultaneously, has prevented electrolytic corrosion.This temperature, wet difunctional sensitive film element be the storage fail-test more than 5 months, stable performance, reliable.
The temperature and humidity of same point in temperature of the present invention, the wet difunctional sensitive film element energy while testing environment, and it is wide to have measurement range, the linearity is good, does not need characteristics such as heated wash, response is fast, volume is little.Its manufacturing process and integrated circuit are compatible fully, not only help to carry out large-scale production and reduce production costs, but also help to be developed further into the temperature of band integrated circuit, wet difunctional sensitive film element.So temperature of the present invention, wet difunctional sensitive film element are a kind of temperature that all has wide application prospects in industrial and agricultural production, storage, management and daily life, wet sensitive element.
Claims (13)
1, a kind of temperature, wet difunctional sensitive film element, it is characterized in that, chip used structure is, the silicon chip 1 of silicon dioxide insulating layer 2 is arranged as substrate 11 with growth at least on one side, deposit one deck titanium film 3 on the silicon dioxide insulating layer 2 of substrate 11, deposit layer of aluminum film 4 on titanium film 3, the titanium of deposit, the aluminium bilayer film is etched into resistive band and another electrode as the interdigitated pattern of bottom electrode I8 of the crooked strip pattern of a double as bottom electrode II 9 simultaneously, on the silicon dioxide insulating layer 2 that is deposited with bottom electrode I8 and bottom electrode II 9, be coated with last layer polyimide film 5, be etched into and cover in bottom electrode I8, bottom electrode II 9 and vacate the rectangular-shaped of three key presser feets, deposit gold film 6 on polyimide film 5 again, be etched into the edge and be slightly less than the rectangle that gathers imines film 5, as top electrode 10; It is the electric capacity of medium with polyimide film 5 that top electrode 10 respectively forms one with bottom electrode I8, bottom electrode II 9 respectively, and two electric capacity are together in series by top electrode 10, constitutes capacitive moisture sensor, and extension line is drawn from bottom electrode I8 and bottom electrode II 9 respectively; The resistive band bottom electrode II 9 of crooked strip pattern constitutes the resistance-type temperature sensing element, and extension line is drawn from the two ends of bottom electrode II 9 respectively; There is not extension line on the top electrode 10.
2, by the described a kind of temperature of claim 1, wet difunctional sensitive film element, it is characterized in that humidity-sensitive element is formed by two capacitances in series, capacitance between 60-100PF, the about 0.1PF/%RH of wet-sensitive sensitivity.
3, by the manufacture method of the described a kind of temperature of claim 1, wet difunctional sensitive film element, comprising:
(1) in the high-temperature oxydation stove, makes the superficial growth layer of silicon dioxide insulation course 2 at least on one side of polished silicon substrate 1, as the substrate 11 of temperature, wet difunctional sensitive film element.
(2) in vacuum chamber, at one side vacuum deposition one deck titanium film 3 with silicon dioxide insulating layer 2 of silicon chip 1, deposit layer of aluminum film 4 on the titanium film 3 of institute's deposit subsequently.
(3) titanium that deposit is become, bottom electrode II 9 that the aluminium bilayer film is etched into a crooked strip and the bottom electrode I 8 of an interdigitated.The bottom electrode II 9 of a crooked strip is again the resistive band of temperature sensing element.
(4) on the silicon dioxide insulating layer 2 that has bottom electrode I 8 and bottom electrode II 9, be coated with last layer polyimide film 5.
(5) polyimide film 5 is etched into rectangular-shaped, covers in bottom electrode I 8 and bottom electrode II 9, vacate three key presser feets.
(6) in high temperature furnace, make polyimide film 5 sintering curings on the silicon chip 1.
(7) in vacuum chamber, has one side of polyimide film 5 at silicon chip 1, vacuum deposition one deck gold film 6.
(8) golden film 6 is etched into the rectangle that its edge is slightly less than polyimide film 5 edges, as top electrode 10.Made required chip.
(9) with die bonding on the metal base, connecting key presser feet and outer lead 7 are electrically connected it.
(10) with there being the metal pipe cap of bleeder vent to encapsulate.
(11) test.
(12) burin-in process.
By the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that 4, it is the 6000-10000 dust that the growth at least on one side of silicon chip 1 has silicon dioxide insulating layer 2, its thickness.
By the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that 5, the technology that forms polyimide film 5 is a lacquering technique.
6, by the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that the thickness of polyimide film 5 is the 3000-6000 dust.
7, by the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that polyimide film 5 is used photoetching, plasma etching technology forms the rectangle that is of a size of 1.4 * 1.3mm.
By the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that 8, polyimide film 5 is a sintering curing in 99.99% the nitrogen high temperature furnace in purity, the temperature of sintering is 250-300 ℃, 1 hour time.
9, by the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that the vacuum deposition technique that forms golden film 6 is a resistance heating evaporation, a kind of method in electron beam evaporation and the sputtering method.
10, by the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that the purity of the gold of deposit gold film 6 usefulness is higher than 99.97%.
By the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that 11, the vacuum tightness of vacuum deposition gold film 6 is 10
-5-10
-6Torr, the heating-up temperature of silicon chip 1 are 100-200 ℃.
12, by the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that golden film 6 thickness of institute's deposit are the 250-500 dust.
By the manufacture method of the described a kind of temperature of claim 4, wet difunctional sensitive film element, it is characterized in that 13, golden film 6 usefulness photoetching, corrosion technology form undersized in the rectangle of 1.4 * 1.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN90105203.5A CN1016896B (en) | 1989-12-26 | 1989-12-26 | Dual-functional temp. and humidity sensitive film element and making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN90105203.5A CN1016896B (en) | 1989-12-26 | 1989-12-26 | Dual-functional temp. and humidity sensitive film element and making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1043987A true CN1043987A (en) | 1990-07-18 |
| CN1016896B CN1016896B (en) | 1992-06-03 |
Family
ID=4879034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN90105203.5A Expired CN1016896B (en) | 1989-12-26 | 1989-12-26 | Dual-functional temp. and humidity sensitive film element and making method |
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| Country | Link |
|---|---|
| CN (1) | CN1016896B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100372679C (en) * | 2001-08-20 | 2008-03-05 | 戈斯国际公司 | Water content sensing system for ink/water emulsion of lithographic printer |
| CN101162705B (en) * | 2006-10-13 | 2010-05-26 | 光环科技股份有限公司 | Multifunctional filmistor-electric capacity array |
| CN101459044B (en) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Dishing phenomenon detection unit in chemical mechanical polishing, manufacturing method and detection method |
| CN103547915A (en) * | 2011-06-08 | 2014-01-29 | 3M创新有限公司 | Humidity sensor and sensor element therefor |
| CN103698367A (en) * | 2013-11-27 | 2014-04-02 | 北京长峰微电科技有限公司 | Heating type humidity sensor and manufacturing method thereof |
| CN103771507A (en) * | 2013-12-25 | 2014-05-07 | 武汉工程大学 | Humidity sensitivity material as well as preparation method and application thereof |
| CN102077081B (en) * | 2008-06-26 | 2014-07-23 | Abb技术有限公司 | Test body, test arrangement, method for manufacturing of a test body, and method for determining a moisture content of the insulation of a power transformer during drying thereof |
| CN104614079A (en) * | 2015-02-10 | 2015-05-13 | 东南大学 | Infrared sensor |
| CN104697661A (en) * | 2015-01-04 | 2015-06-10 | 东南大学 | Three-dimensional integrated capacitance type temperature and humidity sensor based on oxidized graphene and preparation method thereof |
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1989
- 1989-12-26 CN CN90105203.5A patent/CN1016896B/en not_active Expired
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| CN100372679C (en) * | 2001-08-20 | 2008-03-05 | 戈斯国际公司 | Water content sensing system for ink/water emulsion of lithographic printer |
| CN101162705B (en) * | 2006-10-13 | 2010-05-26 | 光环科技股份有限公司 | Multifunctional filmistor-electric capacity array |
| CN101459044B (en) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Dishing phenomenon detection unit in chemical mechanical polishing, manufacturing method and detection method |
| CN102077081B (en) * | 2008-06-26 | 2014-07-23 | Abb技术有限公司 | Test body, test arrangement, method for manufacturing of a test body, and method for determining a moisture content of the insulation of a power transformer during drying thereof |
| CN103547915B (en) * | 2011-06-08 | 2015-11-25 | 3M创新有限公司 | Humidity sensor and sensor element thereof |
| CN103547915A (en) * | 2011-06-08 | 2014-01-29 | 3M创新有限公司 | Humidity sensor and sensor element therefor |
| US9599583B2 (en) | 2011-06-08 | 2017-03-21 | 3M Innovative Properties Company | Humidity sensor and sensor element therefor |
| CN103698367A (en) * | 2013-11-27 | 2014-04-02 | 北京长峰微电科技有限公司 | Heating type humidity sensor and manufacturing method thereof |
| CN103698367B (en) * | 2013-11-27 | 2015-11-25 | 北京长峰微电科技有限公司 | A kind of heated type humidity sensor and preparation method thereof |
| CN103771507B (en) * | 2013-12-25 | 2015-06-24 | 武汉工程大学 | Humidity sensitivity material as well as preparation method and application thereof |
| CN103771507A (en) * | 2013-12-25 | 2014-05-07 | 武汉工程大学 | Humidity sensitivity material as well as preparation method and application thereof |
| CN104697661A (en) * | 2015-01-04 | 2015-06-10 | 东南大学 | Three-dimensional integrated capacitance type temperature and humidity sensor based on oxidized graphene and preparation method thereof |
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| CN104614079A (en) * | 2015-02-10 | 2015-05-13 | 东南大学 | Infrared sensor |
| CN105047152A (en) * | 2015-08-05 | 2015-11-11 | 昆山龙腾光电有限公司 | Display module |
| CN106500761A (en) * | 2016-10-11 | 2017-03-15 | 中国航空工业集团公司北京航空精密机械研究所 | A kind of while the sensor of detection temperature and strain signal |
| CN106500761B (en) * | 2016-10-11 | 2019-01-11 | 中国航空工业集团公司北京航空精密机械研究所 | Sensor that is a kind of while detecting temperature and strain signal |
| CN106768050A (en) * | 2016-12-26 | 2017-05-31 | 上海集成电路研发中心有限公司 | A kind of single-chip high-accuracy temperature-humidity sensor |
| CN106768050B (en) * | 2016-12-26 | 2020-02-14 | 上海集成电路研发中心有限公司 | Single-chip high-precision temperature and humidity sensor |
| CN108489541A (en) * | 2018-03-21 | 2018-09-04 | 北京中硕众联智能电子科技有限公司 | A kind of artificial skin and its detection pressure, the method for temperature and humidity |
| CN108709585A (en) * | 2018-03-21 | 2018-10-26 | 北京中硕众联智能电子科技有限公司 | A kind of artificial skin and its detection pressure, the humiture and method for adjusting temperature |
| CN108489541B (en) * | 2018-03-21 | 2020-11-03 | 北京中硕众联智能电子科技有限公司 | Artificial skin and method for detecting pressure, temperature and humidity thereof |
| CN108709585B (en) * | 2018-03-21 | 2020-12-29 | 北京中硕众联智能电子科技有限公司 | Artificial skin and method for detecting pressure, temperature and humidity and adjusting temperature of artificial skin |
| CN111092073A (en) * | 2020-01-09 | 2020-05-01 | 芯思杰技术(深圳)股份有限公司 | Photoelectric device, chip and chip manufacturing method |
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