CN106680333A - Humidity sensitive capacitor and manufacturing method thereof - Google Patents
Humidity sensitive capacitor and manufacturing method thereof Download PDFInfo
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- CN106680333A CN106680333A CN201710076264.9A CN201710076264A CN106680333A CN 106680333 A CN106680333 A CN 106680333A CN 201710076264 A CN201710076264 A CN 201710076264A CN 106680333 A CN106680333 A CN 106680333A
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- humidity
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- humicap
- dielectric layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000003990 capacitor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 20
- 229920000620 organic polymer Polymers 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical group [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- -1 Hydroxyl ethyl Chemical group 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 6
- 239000010408 film Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 6
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/227—Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a humidity sensitive capacitor and a manufacturing method thereof. The humidity sensitive capacitor comprises a chip and a casing, wherein the chip is packaged in the casing, and comprises an upper electrode, a humidity sensitive membrane, a dielectric layer, a substrate and a lower electrode; the humidity sensitive membrane is an organic polymer humidity sensitive membrane; the dielectric layer is deposited on the surface of the substrate; the humidity sensitive membrane is attached to the surface of the dielectric layer; the upper electrode is arranged on the humidity sensitive membrane, and is provided with a through hole; the lower electrode is arranged below the substrate; the dielectric layer is a silicon nitride or silicon oxide dielectric layer; the substrate is a monocrystalline silicon substrate. The manufacturing method comprises a step of pretreating the substrate, a step of growing the dielectric layer on the surface of the substrate by virtue of a chemical vapor deposition method and a step of laying the humidity sensitive membrane on the surface of the dielectric layer by virtue of an automatic spin coater. The humidity sensitive capacitor is low in power consumption, high in sensitivity and long-term stable.
Description
Technical field
The present invention relates to a kind of humicap and its manufacture method, belong to capacity cell technical field.
Background technology
In fields such as meteorology, environmental protection, national defence, Aeronautics and Astronautics, navigation, industry, agricultural, electronics microelectronics, it is often necessary to right
Ambient humidity is measured and controlled.Condenser type high molecule humidity sensor is high because of reliability, is the advantages of product good weatherability
Moisture measurement element the most frequently used at present.
Condenser type high molecule humidity sensor is to produce to be situated between by electricity of high molecule sensitivity material in a kind of dielectric substrate
The electric capacity of matter, the dielectric constant of polymeric dielectrics layer changes with the moisture that it is adsorbed.The upper bottom crown of the electric capacity
It is made up of metallic film, capacitance signal is drawn from two electrodes, this requires that two electrodes all have certain thickness and solderable.
To ensure that, to humidity sensitive, the electrode on sensitive layer needs porous breathable, it is ensured that steam can pass in and out sensitive layer.
Due to the technique and the particularity of performance requirement of dew cell, traditional humicap preparation method is general to select
Potsherd or alkali-free glass piece are used as backing material, and volume is larger, and due to potsherd and alkali-free glass piece and COMS and
MEMS technology is incompatible, and automated production cannot be realized during production humicap, and cost of labor is high, low production efficiency.
The conventional production method of current humicap has two kinds：One is that the pad that signal is drawn is produced on into base material
On, porous electrode is produced on macromolecule humidity sensitive thin film, forms two electric capacity of series connection, and such one is increased the chi of element
It is very little, capacitance on the other hand is reduced under same size, reduce sensitivity.Later stage Transform Type design is using two minor metal film forming
Method, the thicker metal film of redeposited last layer between porous metallic film and the pad made with bottom electrode simultaneously
Layer, Vented metal film is connected with pad, and sensitivity is improved in the case of the size of so guarantee element is not increased, but thoroughly
The thickness of gas metallic film can only be at tens nanometers, and technique controllability is bad, and the layer can not be effective to sensitive material
Protection, easily scratches, and subsequent applications are more inconvenient, cause this condenser type high molecule humidity sensor poor reliability.
The content of the invention
In order to overcome the deficiencies in the prior art, first purpose of the invention is to provide a kind of humicap, the wet sensitive
Capacitive power dissipation is small, and sensitivity is strong, and steadily in the long term.
Realize that the purpose of the present invention can reach by adopting the following technical scheme that：A kind of humicap, including chip and
Housing；The chip package is in the housing；The chip includes：Top electrode, humidity-sensitive film, dielectric layer, substrate and bottom electrode；It is described
Humidity-sensitive film is organic polymer humidity-sensitive film；The cvd dielectric layer is on the surface of substrate；The humidity-sensitive film is attached to dielectric layer
Surface；The Top electrode is arranged on humidity-sensitive film；The Top electrode is provided with through hole；The bottom electrode is arranged on the lower section of substrate；
The dielectric layer is silicon nitride or silicon oxide dielectric layer；The substrate is monocrystalline substrate.
Preferably, the housing includes the first conductive part, the second conductive part and encapsulating film；The bottom electrode is fixed on
On one conductive part；The Top electrode is electrically connected with by electric-conductor and the second conductive part；The encapsulating film covers the opening of housing,
And by chip package in the housing.
Preferably, the electric-conductor is gold thread.
Preferably, the Top electrode is gold, silver, aluminium, platinum, tantalum, copper, chromium, nickel, molybdenum, niobium or titanium Top electrode, or comprising extremely
The alloy Top electrode of few two or more metals；The bottom electrode is electricity under gold, silver, aluminium, platinum, tantalum, copper, chromium, nickel, molybdenum, niobium or titanium
Pole, or the alloy bottom electrode comprising more than at least two metals.
More preferably, the Top electrode is molybdenum-Cr-Ni Electroplating on Al Alloys pole；The bottom electrode is molybdenum-aluminium alloy bottom electrode.
Preferably, the through hole is grid-shaped through hole, grill-shaped through hole or manhole.
Preferably, the organic polymer humidity-sensitive film is that poly hydroxy ethyl acrylate humidity-sensitive film or polyimides sense are wet
Film.
Preferably, the thickness of the humidity-sensitive film is 0.4~1.2um.
Second object of the present invention is the manufacture method for providing above-mentioned humicap, realizes the production of humicap
Automation, production in enormous quantities, compared with traditional manufacturing process, production cost reduction, product quality stabilization, reliability obtains pole
Big raising.
Realize that the purpose of the present invention can reach by adopting the following technical scheme that：A kind of humicap as described above
Manufacture method, comprises the following steps：
1) substrate acid solution, alkaline solution are cleaned successively, ionized water, acetone and absolute ethyl alcohol is then used successively
10~20min for the treatment of is carried out to substrate under ultrasound condition, is finally dried up with nitrogen；
2) by the method for chemical vapor deposition, in one layer of dielectric layer of superficial growth of substrate；
3) humidity-sensitive film is laid on the surface of dielectric layer by automatic sol evenning machine；
4) Top electrode is set in the way of vacuum evaporation on humidity-sensitive film, bottom electrode is set in the lower section of substrate；
5) through hole is etched in Top electrode in the method for photoetching；
6) by automatic scribing machine by chip cutting；
7) by chip package in the housing.
Preferably, the step 7) including procedure below：
1. chip is fixed on the first conductive part of housing by conducting resinl by automatic bonder；
2. Top electrode is bound with the second conductive part electric-conductor by automatic wire binding machine and is connected；
3. the opening of housing is covered using encapsulating film, and, obtains humicap by chip package in the housing.
Compared to existing technology, the beneficial effects of the present invention are：
1st, humicap of the invention uses monocrystalline silicon as substrate, using organic polymer humidity-sensitive film so that chip
Thickness and size are substantially reduced, and humicap small volume, sensitivity is high；
2nd, humicap of the invention preferably uses molybdenum-Cr-Ni Electroplating on Al Alloys pole and molybdenum-aluminium alloy bottom electrode, greatly improves electricity
The sensitivity of pole and corrosion resistance；
3rd, the preferred poly hydroxy ethyl acrylate humidity-sensitive film of humicap of the invention, it is only necessary to the thickness of micron level, i.e.,
Good hygroscopicity can be shown；
4th, manufacture method of the invention realizes the production automation of humicap, can be adapted to produce in enormous quantities, product matter
Amount stabilization.
Brief description of the drawings
Fig. 1 is the structural representation of humicap；
Fig. 2 is the curve map that the capacitance that embodiment 1 is detected changes with humidity.
Wherein, 1, chip；11st, Top electrode；111st, through hole；12nd, humidity-sensitive film；13rd, dielectric layer；14th, substrate；15th, bottom electrode；
2nd, housing；21st, the first conductive part；22nd, the second conductive part；23rd, encapsulating film；3rd, gold thread.
Specific embodiment
Below, with reference to accompanying drawing and specific embodiment, the present invention is described further：
Reference picture 1, a kind of humicap, including chip 1 and housing 2；The chip 1 is encapsulated in housing 2；The chip
1 includes：Top electrode 11, humidity-sensitive film 12, dielectric layer 13, substrate 14 and bottom electrode 15；The dielectric layer 13 is deposited on substrate 14
Surface；The humidity-sensitive film 12 is attached to the surface of dielectric layer 13；The Top electrode 11 is arranged on humidity-sensitive film 12；The Top electrode
11 are provided with through hole 111；The bottom electrode 15 is arranged on the lower section of substrate 14；The housing 2 includes that the first conductive part 21, second are led
Electric portion 22 and encapsulating film 23；The bottom electrode 15 is fixed on the first conductive part 21；The Top electrode 11 passes through gold thread 3 and second
Conductive part 22 is electrically connected with；The encapsulating film 23 covers the opening of housing 2, and chip 1 is encapsulated in housing 2.
The dielectric layer is silicon nitride or silicon oxide dielectric layer, and its thickness is 50~90nm；The substrate is served as a contrast for monocrystalline silicon
Bottom, its thickness is 200~400um.
In specific embodiment, the Top electrode is molybdenum-Cr-Ni Electroplating on Al Alloys pole；The bottom electrode is electricity under molybdenum-aluminium alloy
Pole.
In specific embodiment, the through hole is grid-shaped through hole, grill-shaped through hole or manhole.
In specific embodiment, the humidity-sensitive film be poly hydroxy ethyl acrylate humidity-sensitive film or polyimides humidity-sensitive film,
Thickness is 0.6~2um.
Above humicap is manufactured by following steps and obtained：
1) substrate acid solution, alkaline solution are cleaned successively, ionized water, acetone and absolute ethyl alcohol is then used successively
Treatment 18min is carried out to substrate under ultrasound condition, is finally dried up with nitrogen；
2) by the method for chemical vapor deposition, in one layer of dielectric layer of superficial growth of substrate；
3) humidity-sensitive film is laid on the surface of dielectric layer by automatic sol evenning machine；
4) Top electrode is set in the way of vacuum evaporation on humidity-sensitive film, bottom electrode is set in the lower section of substrate；
5) through hole is etched in Top electrode in the method for photoetching；
6) by automatic scribing machine by chip cutting into 1.5X1.5mm2；
7) chip is fixed on the first conductive part of housing by conducting resinl by automatic bonder；
8) Top electrode is bound with the second conductive part electric-conductor by automatic wire binding machine and is connected；
9) opening of housing is covered using encapsulating film, and, obtains humicap by chip package in the housing.
Embodiment 1~3
Embodiment 1~3 is manufactured by the manufacture method in specific embodiment and obtained with the material and parameter in form 1
Humicap.
The material and parameter setting of the humicap of the embodiment 1~3 of form 1
Humicap to being obtained in embodiment 1 is detected：The humicap that will be obtained is positioned over temperature/humidity verification box
In, humidity graded from the range of 10~90RH% is adjusted, the capacitance of humicap is detected, capacitance changes with humidity
Curve map from figure as shown in Fig. 2 can obtain：In the range of 10~90RH% of humidity, change of the humicap to humidity has line
Property response, and in gamut, humidity hysteresis is less than 1RH%, and response speed is less than 5 seconds, show good stability with it is accurate
Property.
For a person skilled in the art, technical scheme that can be as described above and design, make other each
Plant corresponding change and deform, and all these changes and deforms the protection model that should all belong to the claims in the present invention
Within enclosing.
Claims (10)
1. a kind of humicap, including chip and housing；The chip package is in the housing；The chip includes：Top electrode, sense
Wet film, dielectric layer, substrate and bottom electrode；It is characterized in that：The humidity-sensitive film is organic polymer humidity-sensitive film；The dielectric layer sinks
Product is on the surface of substrate；The humidity-sensitive film is attached to the surface of dielectric layer；The Top electrode is arranged on humidity-sensitive film；The upper electricity
Pole is provided with through hole；The bottom electrode is arranged on the lower section of substrate；The dielectric layer is silicon nitride or silicon oxide dielectric layer；The lining
Bottom is monocrystalline substrate.
2. humicap as claimed in claim 1, it is characterised in that：The housing includes the first conductive part, the second conductive part
And encapsulating film；The bottom electrode is fixed on the first conductive part；The Top electrode is electrically connected by electric-conductor with the second conductive part
Connect；The encapsulating film covers the opening of housing, and by chip package in the housing.
3. humicap as claimed in claim 2, it is characterised in that：The electric-conductor is gold thread.
4. humicap as claimed in claim 1, it is characterised in that：The Top electrode be gold, silver, aluminium, platinum, tantalum, copper, chromium,
Nickel, molybdenum, niobium or titanium Top electrode, or the alloy Top electrode comprising more than at least two metals；The bottom electrode be gold, silver, aluminium,
Platinum, tantalum, copper, chromium, nickel, molybdenum, niobium or titanium bottom electrode, or the alloy bottom electrode comprising more than at least two metals.
5. humicap as claimed in claim 4, it is characterised in that：The Top electrode is molybdenum-Cr-Ni Electroplating on Al Alloys pole；Under described
Electrode is molybdenum-aluminium alloy bottom electrode.
6. humicap as claimed in claim 1, it is characterised in that：The through hole be grid-shaped through hole, grill-shaped through hole or
Manhole.
7. humicap as claimed in claim 1, it is characterised in that：The organic polymer humidity-sensitive film is polymethylacrylic acid
Hydroxyl ethyl ester humidity-sensitive film or polyimides humidity-sensitive film.
8. humicap as claimed in claim 1, it is characterised in that：The thickness of the humidity-sensitive film is 0.4~1.2um.
9. a kind of manufacture method of humicap as claimed in claim 1, it is characterised in that：Comprise the following steps：
1) substrate acid solution, alkaline solution are cleaned successively, then successively using ionized water, acetone and absolute ethyl alcohol super
10~20min for the treatment of is carried out to substrate under the conditions of sound, is finally dried up with nitrogen；
2) by the method for chemical vapor deposition, in one layer of dielectric layer of superficial growth of substrate；
3) humidity-sensitive film is laid on the surface of dielectric layer by automatic sol evenning machine；
4) Top electrode is set in the way of vacuum evaporation on humidity-sensitive film, bottom electrode is set in the lower section of substrate；
5) through hole is etched in Top electrode in the method for photoetching；
6) by automatic scribing machine by chip cutting；
7) by chip package in the housing.
10. the manufacture method of humicap as claimed in claim 9, it is characterised in that：The step 7) including procedure below：
1. chip is fixed on the first conductive part of housing by conducting resinl by automatic bonder；
2. Top electrode is bound with the second conductive part electric-conductor by automatic wire binding machine and is connected；
3. the opening of housing is covered using encapsulating film, and, obtains humicap by chip package in the housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710076264.9A CN106680333A (en) | 2017-02-13 | 2017-02-13 | Humidity sensitive capacitor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710076264.9A CN106680333A (en) | 2017-02-13 | 2017-02-13 | Humidity sensitive capacitor and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111909376A (en) * | 2020-06-21 | 2020-11-10 | 浙江大学 | Oil liquid corrosion resistant dynamic absorption-dehydration high polymer composite sensitive material and preparation method thereof |
| CN112710706A (en) * | 2020-12-08 | 2021-04-27 | 北京智芯微电子科技有限公司 | Humidity sensor |
| CN113390931A (en) * | 2021-05-28 | 2021-09-14 | 苏州锐光科技有限公司 | Upper electrode material for capacitive humidity sensor and preparation method thereof |
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| CN111909376B (en) * | 2020-06-21 | 2021-06-01 | 浙江大学 | Oil liquid corrosion resistant dynamic absorption-dehydration high polymer composite sensitive material and preparation method thereof |
| CN112710706A (en) * | 2020-12-08 | 2021-04-27 | 北京智芯微电子科技有限公司 | Humidity sensor |
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