CN2080670U - Capacitance type organic film humidity sensor - Google Patents
Capacitance type organic film humidity sensor Download PDFInfo
- Publication number
- CN2080670U CN2080670U CN 90224139 CN90224139U CN2080670U CN 2080670 U CN2080670 U CN 2080670U CN 90224139 CN90224139 CN 90224139 CN 90224139 U CN90224139 U CN 90224139U CN 2080670 U CN2080670 U CN 2080670U
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- CN
- China
- Prior art keywords
- humidity
- humidity sensor
- organic membrane
- silicon dioxide
- dioxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012528 membrane Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000004642 Polyimide Substances 0.000 claims abstract description 12
- 229920002521 macromolecule Polymers 0.000 claims abstract description 12
- 229920001721 polyimide Polymers 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The utility model relates to a capacitance type organic film humidity sensor used for measuring and controlling humidity, comprising a top electrode, a bottom electrode, a silicon chip, a silicon dioxide layer and a wetness sensing membrane with a polyimide macromolecule organic film as a medium. The utility model is characterized in that the silicon chip is used as the bottom electrode on which the silicon dioxide layer is arranged, and the wetness sensing membrane is arranged on the silicon dioxide layer; the top electrode made of a metal aluminum layer is arranged on the wetness sensing membrane. Besides the humidity sensor has the same excellent repeatability and stability of technical performances and technical parameters with the existing humidity sensor, the utility model also has a series of good technical features such as high reliability and compatibility, and low cost, with 80% production yield.
Description
A kind of condenser type organic membrane humidity sensor that can be used for quantitative measurment and controlled humidity can be widely used in a department that is essential and measures and monitor humidity in the industries such as agricultural, weaving, electronics, medicine, food, air-conditioning.
Although the temperature sensor kind of all departments' use at present is a lot, ubiquity the defective on the technical features such as stability, repeatability and interchangeability are poor, and precision is not high, and the parameter dispersiveness is big.For addressing the above problem, develop a kind of condenser type organic membrane humidity sensor at present again, introduced a kind of new material-polyimide macromolecule organic membrane in this sensor.Its structure of such humidity sensor is referring to synoptic diagram 1, it is by silicon chip, silicon dioxide layer on it, upper and lower electrode on this, that adopt concentric garden shape double-level-metal to make, and be sandwiched between the upper/lower electrode, constitute with the humidity-sensitive film of polyimide macromolecule organic membrane as medium.This humidity sensor is owing to introduced the polyimide macromolecule organic membrane with good heat-resisting quantity, thermal stability, electrical insulating property, chemical stability, make this humidity sensor overcome the defective on aforementioned many humidity sensors of thread technical feature, have performances such as good thermal stability, repeatability and high precision.But there are two big shortcomings in the polyimide macromolecule organic membrane that is used as the humidity-sensitive film medium: the one, be difficult in manufacture process guarantee that polyimide macromolecule organic membrane does not have pin hole and breakage, and therefore very easily cause upper and lower interelectrode short circuit; The 2nd, be difficult in use guarantee that polyimide macromolecule organic membrane thickness is even, the humidity-sensitive film layer has only 0.8～1.4 micron thickness in addition, also easily causes the voltage breakdown between upper/lower electrode.The existence of above-mentioned performance deficiency makes that this condenser type organic membrane sensor yield rate is low, the life-span short, specially the phase poor reliability.
The purpose of this utility model is to provide a kind of technical features such as good stable, repeatability that both had, and it is long to have the life-span again, special phase good reliability, the novel capacitance-type organic membrane humidity sensor of good characteristics such as fabrication yield height.
Structure of the present utility model such as synoptic diagram 2, it also includes upper and lower electrode, silicon chip, silicon dioxide layer is made the humidity-sensitive film of medium with polyimide macromolecule organic membrane.Its feature is to adopt silicon chip itself as bottom electrode, is the layer of silicon dioxide layer on the silicon chip, is humidity-sensitive film on the silicon dioxide layer, is the top electrode of making of the metal aluminium lamination on the humidity-sensitive film.This top electrode can adopt latticed or concentric garden shape structure, also can adopt other planform.
The utility model has been owing to adopted the method for the high-temperature thermal oxidation growth layer of silicon dioxide layer of having grown first on the silicon chip as bottom electrode, this oxide layer compact structure, and thickness is even, and is withstand voltage greater than 100 excellent, therefore has good insulation performance; Moreover applied one deck humidity-sensitive film again thereon, make to form dielectric layers between upper/lower electrode, thereby prevented short circuit phenomenon between pin hole or the inhomogeneous upper/lower electrode that causes is arranged effectively because of humidity-sensitive film.Therefore this condenser type organic membrane humidity sensor is except that technical feature such as the good repeatability of the humidity sensor that keeps structure shown in Figure 1, stability and technical parameter, the good characteristic that also has following uniqueness:
1, the rate that manufactures a finished product transfers 80% to by original 30%;
2, dependability improves, high conformity;
3, cost reduces;
4, bottom electrode needn't be drawn through the top electrode window, can directly draw from shell, makes technological operation easy.
Description of drawings:
Fig. 1: former condenser type organic membrane humidity sensor structural representation
1, bottom electrode exit; 2, the top electrode of double-metal layer making;
3, humidity-sensitive film; 4, the bottom electrode of double-metal layer making;
5, silicon dioxide layer; 6, silicon chip;
Fig. 2: structural representation of the present utility model
7, the top electrode of aluminum metal layer making; 8, silicon bottom electrode;
Fig. 3: can reflect the vertical view of Fig. 1 structure humidity sensor top electrode layout, top electrode is concentric garden shape structure among the figure;
Fig. 4: can reflect the vertical view of the utility model humidity sensor top electrode layout, the network-like structure of top electrode among the figure.
Embodiment:
By structure shown in Figure 2, make by following technology:
1, conventional method cleaning silicon chip;
2, the high-temperature thermal oxidation layer thickness of growing is the silicon dioxide insulating layer of 8000 ° of A, and wherein furnace temperature is 1150 ℃ of logical oxygen 500 ml/min, and the time is 40 minutes;
3, oxide layer is removed at the conventional method corrosion of silicon back side;
4, utilizing the spin method to apply a layer thickness is 0.9～1.6 micron polyimide macromolecule organic membrane;
5, utilize conventional photoetching process, etching polyimide macromolecule organic membrane;
6, oxygen removes photoresist, and dries above-mentioned organic membrane, and adopting furnace temperature is 400 ℃, logical oxygen 500 ml/min, 7 minutes time;
7, to evaporate a layer thickness be that 0.5～0.8 micron metal aluminium lamination is as top electrode to conventional method;
8, conventional method etches electrode structure;
9, putting it into temperature is 400 ℃, and oxygen flow is in the stove of 500 ml/min 5 minutes, removes on the aluminium photoresist and makes the aluminium electrode firm;
10, conventional method test scribing, qualified pipe is made in the bonding die pressure welding at last.
Make the basic parameter and the structure similar shown in Figure 1 of structure humidity sensor shown in Figure 2 with above-mentioned process, numerical value is as follows:
1, when 75% relative humidity, C＞80PF;
2, (the RH of 20%～80%RH) sensitivity＞0.3PF/(1%) of wet scope in;
3, serviceability temperature-20 ℃～80 ℃;
4, the response time was less than 20 seconds (full scale 90%);
5, hygrometric scope 0～100%RH.
C wherein: be humidity sensor capacitance PF: the unit micromicrofarad of potential value
RH: relative humidity english abbreviation
The reflection prior art references is the IEEE TRANSACTIONS ONELECTRON DEVICES.VOL.ED-32 of the U.S., NO.7, and JULY 1985.
Claims (2)
1, a kind of condenser type organic membrane humidity sensor that is used for quantitative measurment and controlled humidity includes upper and lower electrode, make the humidity-sensitive film of medium with polyimide macromolecule organic membrane, silicon dioxide layer and silicon chip, of the present utility model being characterised in that, it is to adopt silicon chip itself as bottom electrode, being silicon dioxide layer on it, is the humidity-sensitive film of making medium with polyimide macromolecule organic membrane on this, is the top electrode of making of the metal aluminium lamination on the humidity-sensitive film.
2, condenser type organic membrane temperature sensor according to claim 1 is characterized in that top electrode can adopt network-like or concentric garden shape structure, also can adopt other planform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 90224139 CN2080670U (en) | 1990-11-27 | 1990-11-27 | Capacitance type organic film humidity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 90224139 CN2080670U (en) | 1990-11-27 | 1990-11-27 | Capacitance type organic film humidity sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2080670U true CN2080670U (en) | 1991-07-10 |
Family
ID=4901771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 90224139 Withdrawn CN2080670U (en) | 1990-11-27 | 1990-11-27 | Capacitance type organic film humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2080670U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101726526A (en) * | 2009-11-20 | 2010-06-09 | 西安交通大学 | Solid electrolyte SO2 gas sensor and manufacturing method thereof |
| CN101040181B (en) * | 2004-10-18 | 2010-09-29 | 森迈帝克公司 | A humidity sensor and a method for manufacturing the same |
| CN101949878A (en) * | 2010-09-03 | 2011-01-19 | 兰州交通大学 | Polyimide film miniature quick-response humidity sensing element and manufacturing method thereof |
| CN101960299A (en) * | 2007-04-19 | 2011-01-26 | 徐世烈 | Sensor for humidity and management system therefor |
| CN102043000A (en) * | 2009-10-21 | 2011-05-04 | 迈克纳斯公司 | Humidity sensor |
| CN102639993A (en) * | 2009-12-22 | 2012-08-15 | 纳米及先进材料研发院有限公司 | Rapid response relative humidity sensor using anodic aluminum oxide film |
| CN103547915A (en) * | 2011-06-08 | 2014-01-29 | 3M创新有限公司 | Humidity sensor and sensor element therefor |
-
1990
- 1990-11-27 CN CN 90224139 patent/CN2080670U/en not_active Withdrawn
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040181B (en) * | 2004-10-18 | 2010-09-29 | 森迈帝克公司 | A humidity sensor and a method for manufacturing the same |
| CN101960299A (en) * | 2007-04-19 | 2011-01-26 | 徐世烈 | Sensor for humidity and management system therefor |
| CN101960299B (en) * | 2007-04-19 | 2014-05-28 | 徐世烈 | Sensor for humidity and management system therefor |
| CN102043000B (en) * | 2009-10-21 | 2015-01-21 | 迈克纳斯公司 | Humidity sensor |
| CN102043000A (en) * | 2009-10-21 | 2011-05-04 | 迈克纳斯公司 | Humidity sensor |
| CN101726526A (en) * | 2009-11-20 | 2010-06-09 | 西安交通大学 | Solid electrolyte SO2 gas sensor and manufacturing method thereof |
| CN102639993A (en) * | 2009-12-22 | 2012-08-15 | 纳米及先进材料研发院有限公司 | Rapid response relative humidity sensor using anodic aluminum oxide film |
| CN102639993B (en) * | 2009-12-22 | 2015-03-25 | 纳米及先进材料研发院有限公司 | Rapid response relative humidity sensor using anodic aluminum oxide film |
| CN101949878B (en) * | 2010-09-03 | 2013-05-01 | 兰州交通大学 | Polyimide film miniature quick-response humidity sensing element and manufacturing method thereof |
| CN101949878A (en) * | 2010-09-03 | 2011-01-19 | 兰州交通大学 | Polyimide film miniature quick-response humidity sensing element and manufacturing method thereof |
| CN103547915A (en) * | 2011-06-08 | 2014-01-29 | 3M创新有限公司 | Humidity sensor and sensor element therefor |
| CN103547915B (en) * | 2011-06-08 | 2015-11-25 | 3M创新有限公司 | Humidity sensor and sensor element thereof |
| US9599583B2 (en) | 2011-06-08 | 2017-03-21 | 3M Innovative Properties Company | Humidity sensor and sensor element therefor |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |