CN103698367A - Heating type humidity sensor and manufacturing method thereof - Google Patents
Heating type humidity sensor and manufacturing method thereof Download PDFInfo
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- CN103698367A CN103698367A CN201310610529.0A CN201310610529A CN103698367A CN 103698367 A CN103698367 A CN 103698367A CN 201310610529 A CN201310610529 A CN 201310610529A CN 103698367 A CN103698367 A CN 103698367A
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Abstract
The invention discloses a heating type humidity sensor, including a substrate (1), a humidity sensitive capacitance and a heating circuit. The substrate (1) is a square sheet as a supporting structure at the lowest layer. The heating circuit encircles the humidity sensitive capacitance. Two heating type humidity sensors are used at the same time; one is for heating and dehumidification cooling, and at the same time, the other one is for humidity measurement; and after one working cycle, the two sensors swap working modes. The manufacturing method of the heating type humidity sensor comprises the following steps: selecting the substrate (1); making the heating circuit; making a capacitance lower electrode (7); making a capacitance humidity sensing dielectric layer (12); and making a capacitor upper electrode (13). The heating type humidity sensor provided by the invention in the ambient temperature of 50-90 DEG C has humidity measurement range of 0%-100% RH, humidity measurement error less than +/- 3%, humidity resolution less than 0.1% and response time of less than 1s at room temperature.
Description
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Technical field
The present invention relates to a kind of humidity sensor, particularly a kind of heated type humidity sensor and preparation method thereof.
Background technology
Aerological circumstance complication is changeable, and aerial humidity is with highly there being the larger space rate of change, the state of temperature in continuous decrease; And humidity sensor is easily polluted when rising by high humidity environments such as cloud, rain, under low temperature environment, also easily there is frost, these directly cause the serious deviation of humidity detection accuracy.
Traditional capacitance type humidity sensor only comprises humidity sensitive capacitive part, substrate, electric capacity top electrode, capacitor lower electrode, electrode pad and electric capacity humidity-sensitive medium layer, consists of.For realizing high-altitude low temperature and high relative humidity environmental testing, introduce heating and dehumidification technology, the heater circuit being formed by resistive heater and pad, during work, electric current is by heating resistor, and the effect of dehumidifying is played in resistance wire heating.Two humidity detecting module Integrated Humidity Sensors of the integrated heating circuit that for example a kind of MEMS method is made, its structure for covering heater circuit on substrate, above heater circuit, comprise respectively two humidity sensitive electric capacity, the mode of coated heating makes humicap heat loss process slow, two humidity sensitive electric capacity are integrated on same chip, the accuracy of the heat meeting humidity sensitive electric capacity interfering with each other moisture measurement that heating process gives out, and the method for making step of this kind of sensor is complicated, device yield is lower.
Summary of the invention
The object of the present invention is to provide a kind of heated type humidity sensor and preparation method thereof, solve current aerological sounding with humidity sensor under high-altitude low temperature environment, surface is easily polluted by water and frost and humidity measurement accuracy and the lower problem of sensitivity occurs.
A kind of heated type humidity sensor, comprise: substrate, also comprise: humidity sensitive electric capacity and heater circuit, wherein humidity sensitive electric capacity comprises: capacitor lower electrode metallic substrate layer, capacitor lower electrode, electric capacity humidity-sensitive medium layer, electric capacity top electrode, capacitor lower electrode pad, capacitor lower electrode pad metal basalis, electric capacity top electrode pad and electric capacity top electrode pad metal basalis, heater circuit comprises: heating resistor, heating resistor metallic substrate layer, heating resistor pad and heating resistor pad metal basalis.Substrate is square sheet, as supporting construction, is placed in lowermost layer.Capacitor lower electrode metallic substrate layer, capacitor lower electrode pad metal basalis, electric capacity top electrode pad metal basalis are positioned on substrate, and capacitor lower electrode, capacitor lower electrode pad and electric capacity top electrode pad lay respectively in the capacitor lower electrode metallic substrate layer, capacitor lower electrode pad metal basalis, electric capacity top electrode pad metal basalis of identical shaped size.Capacitor lower electrode metallic substrate layer is connected with capacitor lower electrode pad metal basalis, gapped between capacitor lower electrode metallic substrate layer and electric capacity top electrode pad metal basalis, capacitor lower electrode pad metal basalis and electric capacity top electrode pad metal basalis are placed in the both sides of capacitor lower electrode metallic substrate layer.Electric capacity humidity-sensitive medium layer covers on capacitor lower electrode, does not cover capacitor lower electrode pad and top electrode pad.Electric capacity top electrode is positioned at the capacitor lower electrode top that is coated with electric capacity humidity-sensitive medium layer, and electric capacity top electrode afterbody lead-in wire contacts with electric capacity top electrode pad.Heater circuit is surrounded on humidity sensitive electric capacity around, heating resistor metallic substrate layer and heating resistor pad metal basalis are positioned on substrate, and heating resistor and heating resistor pad lay respectively in the heating resistor metallic substrate layer and heating resistor pad metal basalis of identical shaped size.Heating resistor metallic substrate layer is connected with heating resistor pad metal basalis, and two heating resistor pad metal basalises are placed in the both sides of heating resistor metallic substrate layer.Electric capacity humidity-sensitive medium layer covers on heating resistor and does not cover heating resistor pad, and electric capacity humidity-sensitive medium layer plays the effect of surface passivation.
The substrate of heated type humidity sensor is selected a kind of in the silicon chip after quartz, glass, pottery or surface oxidation, and at least one side of substrate is polished surface and surface insulation, and the thickness of substrate is 0.2mm～0.5mm.
Heating resistor metallic substrate layer and heating resistor pad metal basalis are identical material, adopt any in NiCr, Cr, TiWu or Ta, and thickness is 30nm～250nm.
Heating resistor and heating resistor pad are identical material, adopt any in NiCr or Pt, and thickness is 100nm～400nm, and resistance value is 30 Ω～150 Ω.
Capacitor lower electrode metallic substrate layer, capacitor lower electrode pad metal basalis and electric capacity top electrode pad metal basalis are identical material, adopt any in NiCr, Cr, TiWu or Ta, and thickness is 30nm～250nm.
Capacitor lower electrode, capacitor lower electrode pad and electric capacity top electrode pad are identical material, adopt any material in Au, Cu, Al or Pt, and thickness is 100nm～400nm.
The thickness of electric capacity humidity-sensitive medium layer is 300nm～1000nm.
Electric capacity top electrode adopts any in Au, Cu, Al or Pt, and thickness is 5nm～100nm, and electric capacity top electrode adopts grid type open-celled structure, and perforate is the square aperture of 5 μ m～50 μ m, is uniformly distributed; Perforate position is not island chain shape ventilating structure.
During the work of heated type humidity sensor, on humidity sensitive electric capacity, apply voltage difference, electric charge moves under the effect of electric field, because the electric capacity humidity-sensitive medium layer between electric capacity top electrode and capacitor lower electrode is nonconducting, hindered moving of electric charge and made charge accumulated on electric capacity top electrode and capacitor lower electrode, caused the storage of electric charge and form electric capacity.The absorption of electric capacity humidity-sensitive medium layer or release hydrone, in space during hydrone concentration change, the hydrone quantity of electric capacity humidity-sensitive medium layer absorption is respective change thereupon also, cause the variation of electric capacity humidity-sensitive medium layer specific inductive capacity, cause the obstruction ability of charge movement also to change thereupon, therefore the magnitude of the stored charge on capacitance electrode can change along with the variation of the adsorbance of electric capacity humidity-sensitive medium layer hydrone, causes final capacitance to change.Electric capacity top electrode pad and capacitor lower electrode pad welding lead, to data collector, carry out humidity detection by measuring the variation of capacitance between capacitance electrode.During heater circuit work, on heating resistor pad, apply voltage, when electric current passes through snakelike heating resistor, heating resistor self produces heat, and heat is delivered to other regions of chip, by humidity sensitive electric capacity and the heating of whole chip.In addition the electric capacity humidity-sensitive medium layer covering on heating resistor, also plays the effect that prevents heating resistor short circuit in the situation of getting wet.Capacitor lower electrode metallic substrate layer, capacitor lower electrode pad metal basalis, electric capacity top electrode pad metal basalis, heating resistor metallic substrate layer, heating resistor pad metal basalis are transition metal layer, only play the effect that improves capacitor lower electrode, capacitor lower electrode pad, electric capacity top electrode pad, heating resistor, heating resistor pad adhesion, can not affect the movement of electric charge under potential difference (PD).
When heated type humidity sensor uses, two independently heated type humidity sensors are installed in same data acquisition board, in the process of heated type humidity sensor heating and dehumidification and cooling, another heated type humidity sensor carries out moisture measurement; After the work period, two heated type humidity sensors exchange working method, and one is carried out moisture measurement, and another carries out heating and dehumidification and cooling.Heated type humidity sensor carries out or not moisture measurement in the process of heating and dehumidification and cooling, carries out or not heating and dehumidification in the process of moisture measurement.
A method for making for heated type humidity sensor, its concrete steps are:
The first step is selected substrate
The substrate of heated type humidity sensor is selected a kind of in the silicon chip after quartz, glass, pottery or surface oxidation.
Second step is made heater circuit
Adopt evaporation method or sputtering method directly at the first plated metal basalis of substrate surface, then deposit heating resistor metal level, employing etching or the method for peeling off are made as heating resistor metallic substrate layer, heating resistor pad metal basalis, heating resistor and heating resistor pad by metallic substrate layer and heating resistor metal level.
The 3rd step is made capacitor lower electrode and electrode pad
Adopt evaporation method or sputtering method directly at the first plated metal basalis of substrate surface, then deposited capacitances bottom electrode metal level, adopts etching or the method peeled off is made as capacitor lower electrode metallic substrate layer, capacitor lower electrode pad metal basalis, electric capacity top electrode pad metal basalis, capacitor lower electrode, capacitor lower electrode pad and electric capacity top electrode pad by metallic substrate layer and capacitor lower electrode metal level.
The 4th step is made electric capacity humidity-sensitive medium layer
Spin coating macromolecule prepolymer above substrate, and carry out prebake conditions;
Then macromolecule prepolymer is carried out to photoetching, wet etching, on capacitor lower electrode and heating resistor, form capacitor dielectric thin layer;
Finally the macromolecule prepolymer film after photoetching treatment is obtained to final electric capacity humidity-sensitive medium layer together with substrate through heating up;
The 5th step is made electric capacity top electrode
Adopt directly depositing metal layers on electric capacity humidity-sensitive medium layer of evaporation method or sputtering method, employing etching or the method for peeling off are made as electric capacity top electrode (13) by metal level.
The heated type humidity sensor that the present invention makes, in the ambient temperature range of 50 ℃～-90 ℃, moisture measurement scope is 0%～100%RH, moisture measurement error is less than ± and 3%, humidity resolution is less than 0.1%, the normal temperature environment response time is lower than 1s, realized the integrated of heating and humidity detecting function, be less than 5s by the heater circuit heat time, can make-60 ℃ of capacitance temperatures in environment be increased to rapidly+more than 70 ℃, the function that plays heating and dehumidification, is applicable to aerological sounding.The present invention adopts planar semiconductor technique that the humidity sensor with heater circuit is fabricated on micro chip, and the size of heated type humidity sensor can be adjusted according to required capacitance and heating power, and minimum dimension can be less than 3.5mm í 2.0mm.Adopt the first wet etching electric capacity humidity-sensitive medium layer that the mode of polymerization is made again to play the effect of humidity response and heating resistor passivation simultaneously, prevent the short circuit that gets wet, the method does not need to carry out humidity sensing layer dry etching and passivation layer is made, optimized process route, reduced difficulty of processing, and the high conformity of heated type humidity sensor.
Accompanying drawing explanation
The structural representation of a kind of heated type humidity sensor of Fig. 1;
The vertical view of a kind of heated type humidity sensor of Fig. 2.
1. substrate 2. heating resistor metallic substrate layer 3. heating resistor 4. heating resistor pad metal basalis 5. heating resistor pad 6. capacitor lower electrode metallic substrate layer 7. capacitor lower electrode 8. capacitor lower electrode pad metal basalis 9. electric capacity top electrode pad metal basalis 10. capacitor lower electrode pad 11. electric capacity top electrode pad 12. electric capacity humidity-sensitive medium layer 13. electric capacity top electrode.
Embodiment
A heated type humidity sensor, comprising: substrate 1, humidity sensitive electric capacity and heater circuit; Wherein humidity sensitive electric capacity comprises: capacitor lower electrode metallic substrate layer 6, capacitor lower electrode 7, electric capacity humidity-sensitive medium layer 12, electric capacity top electrode 13, capacitor lower electrode pad 10, capacitor lower electrode pad metal basalis 8, electric capacity top electrode pad 11 and electric capacity top electrode pad metal basalis 9, heater circuit comprises: heating resistor 3, heating resistor metallic substrate layer 2, heating resistor pad 5 and heating resistor pad metal basalis 4.Substrate 1 is square sheet, as supporting construction, is placed in lowermost layer.Capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8, electric capacity top electrode pad metal basalis 9 are positioned on substrate 1, and capacitor lower electrode 7, capacitor lower electrode pad 10 and electric capacity top electrode pad 11 lay respectively in the capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8, electric capacity top electrode pad metal basalis 9 of identical shaped size.Capacitor lower electrode metallic substrate layer 6 is connected with capacitor lower electrode pad metal basalis 8, gapped between capacitor lower electrode metallic substrate layer 6 and electric capacity top electrode pad metal basalis 9, capacitor lower electrode pad metal basalis 8 and electric capacity top electrode pad metal basalis 9 are placed in the both sides of capacitor lower electrode metallic substrate layer 6.Electric capacity humidity-sensitive medium layer 12 covers on capacitor lower electrode 7, does not cover capacitor lower electrode pad 10 and top electrode pad 11.Electric capacity top electrode 13 is positioned at capacitor lower electrode 7 tops that are coated with electric capacity humidity-sensitive medium layer 12, and electric capacity top electrode 13 afterbody lead-in wires contact with electric capacity top electrode pad 11.Heater circuit is surrounded on the surrounding of humidity sensitive electric capacity, heating resistor metallic substrate layer 2 and heating resistor pad metal basalis 4 are positioned on substrate 1, and heating resistor 3 and heating resistor pad 5 lay respectively in the heating resistor metallic substrate layer 2 and heating resistor pad metal basalis 4 of identical shaped size.Heating resistor metallic substrate layer 2 is connected with heating resistor pad metal basalis 4, and two heating resistor pad metal basalises 4 are placed in the both sides of heating resistor metallic substrate layer 2.Electric capacity humidity-sensitive medium layer 12 covers on the heating resistor 3 of heater circuit, does not cover heating resistor pad 5.
During the work of heated type humidity sensor, on humidity sensitive electric capacity, apply voltage difference, electric charge moves under the effect of electric field, because the electric capacity humidity-sensitive medium layer 12 between electric capacity top electrode 13 and capacitor lower electrode 7 is nonconducting, hindered moving of electric charge and made charge accumulated on electric capacity top electrode 13 and capacitor lower electrode 7, caused the storage of electric charge and form electric capacity.12 absorption of electric capacity humidity-sensitive medium layer or release hydrone, in space during hydrone concentration change, the hydrone quantity of electric capacity humidity-sensitive medium layer 12 absorption is respective change thereupon also, cause the variation of electric capacity humidity-sensitive medium layer 12 specific inductive capacity, cause the obstruction ability of charge movement also to change thereupon, therefore the magnitude of the stored charge on capacitance electrode can change along with the variation of the adsorbance of electric capacity humidity-sensitive medium layer 12 hydrone, causes final capacitance to change.Electric capacity top electrode pad 11 and capacitor lower electrode pad 10 welding leads, to data collector, carry out humidity detection by measuring the variation of capacitance between capacitance electrode.During heater circuit work, on heating resistor pad 5, apply voltage, when electric current passes through snakelike heating resistor 3, heating resistor 3 self produces heat, and heat is delivered to other regions of chip, by humidity sensitive electric capacity and the heating of whole chip.In addition the electric capacity humidity-sensitive medium layer 12 covering on heating resistor 3, also plays the effect that prevents heating resistor 3 short circuit in the situation of getting wet.Capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8, electric capacity top electrode pad metal basalis 9, heating resistor metallic substrate layer 2, heating resistor pad metal basalis 4 are transition metal layer, only play the effect that improves capacitor lower electrode 7, capacitor lower electrode pad 10, electric capacity top electrode pad 11, heating resistor 3, heating resistor pad 5 adhesion, can not affect the movement of electric charge under potential difference (PD).
When heated type humidity sensor uses, two independently heated type humidity sensors are installed in same data acquisition board, in the process of heated type humidity sensor heating and dehumidification and cooling, another heated type humidity sensor carries out moisture measurement; After the work period, two heated type humidity sensors exchange working method, and one is carried out moisture measurement, and another carries out heating and dehumidification and cooling.Heated type humidity sensor carries out or not moisture measurement in the process of heating and dehumidification and cooling, carries out or not heating and dehumidification in the process of moisture measurement.
embodiment mono-:
The substrate 1 of heated type humidity sensor is selected quartz, and the wherein one side of substrate 1 is polished surface and surface insulation, and the thickness of substrate 1 is 0.3mm.
Heating resistor metallic substrate layer 2 and heating resistor pad metal basalis 4 all adopt NiCr, and NiCr metal layer thickness is 30nm.
Heating resistor 3 and heating resistor pad 5 all adopt Pt, and Pt metal layer thickness is 100nm, and resistance value is 50 Ω.
Capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8 and electric capacity top electrode pad metal basalis 9 all adopt NiCr, and thickness is 100nm.
Capacitor lower electrode 7, capacitor lower electrode pad 10 and electric capacity top electrode pad 11 all adopt Au, and thickness is 200nm.
The thickness of electric capacity humidity-sensitive medium layer 12 is 600nm.
Electric capacity top electrode 13 adopts Au, and thickness is 10nm, and electric capacity top electrode 13 adopts grid type open-celled structure, and perforate is the square aperture of 10 μ m, is uniformly distributed; Perforate position is not island chain shape ventilating structure.
A method for making for heated type humidity sensor, its concrete steps are:
The first step is selected substrate 1
Select one side for the quartz of polished surface is as substrate 1, thickness is 0.3mm.
Second step is made heater circuit
First photoresist is evenly spin-coated on to substrate 1 surface, carries out prebake conditions.Select heating resistor mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.The substrate surface of next method that adopts magnetron sputtering after photoetching treatment carries out the sputter of NiCr metal level, and NiCr metal layer thickness is 30nm.Sputter finishes the method for rear employing magnetron sputtering and carries out immediately the sputter of Pt metal level, and its thickness is 100nm.Finally the substrate 1 that is coated with NiCr and Pt metal level is immersed in acetone soln, ultrasonic dissolution photoresist is clear to metal pattern, completes the lithography stripping of heating resistor metallic substrate layer 2, heating resistor 3, heating resistor pad metal basalis 4 and heating resistor pad 5 simultaneously.
The 3rd step is made capacitor lower electrode 7 and electrode pad
First photoresist is evenly spin-coated on to substrate 1 surface, carries out prebake conditions.Select capacitor lower electrode mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.The substrate surface of next method that adopts magnetron sputtering after photoetching treatment carries out the sputter of NiCr metal level, and its thickness is 100nm.Sputter finishes the method for rear employing magnetron sputtering and carries out immediately the sputter of Au metal level, and its thickness is 200nm.Finally the substrate 1 that is coated with NiCr metal level and Au metal level is immersed in acetone soln, ultrasonic dissolution photoresist is clear to metal pattern, completes the lithography stripping of capacitor lower electrode 7, capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad 10, capacitor lower electrode pad metal basalis 8, electric capacity top electrode pad 11 and electric capacity top electrode pad metal basalis 9 simultaneously.
The 4th step is made electric capacity humidity-sensitive medium layer 12
First at capacitor lower electrode 7 and the surperficial spin coating polyamic acid of substrate 1, then 90 ℃ are toasted 10min; Secondly at polyamic acid surface spin coating photoresist, carry out prebake conditions.Select humidity sensing layer mask exposure, spray Tetramethylammonium hydroxide is removed photoresist, and carries out rear baking after deionized water rinsing again.Then adopt the mode of spray acetone to remove the remaining photoresist in polyamic acid surface; Finally the polyamic acid layer after photoetching treatment is carried out to high temperature imidization together with substrate 1.Set gradient increased temperature program, heating rate is 2 ℃/min, by 60 ℃, starts to be incubated 10min; Medium temperature is 120 ℃, insulation 1h; The imidizate temperature in end stage is 300 ℃, insulation 4h.Finally obtaining its thickness is the polymkeric substance electric capacity humidity-sensitive medium layer 12 of 600nm.
The 5th step is made electric capacity top electrode 13
First photoresist is evenly spin-coated on to electric capacity humidity-sensitive medium layer 12 and substrate 1 surface, carries out prebake conditions.Select electric capacity top electrode mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.The sputter of Au metal level is carried out on next method that adopts magnetron sputtering humidity sensing layer 12 surface after photoetching treatment, and its thickness is 10nm.Finally the substrate 1 of plating Au metal level is immersed in acetone soln, ultrasonic dissolution photoresist is clear to metal pattern, completes the lithography stripping of electric capacity top electrode 13, obtains heated type humidity sensor.
embodiment bis-:
The substrate 1 of heated type humidity sensor is selected glass, substrate 1 is two-sided be polished surface and surface insulation, the thickness of substrate 1 is 0.5mm.
Heating resistor metallic substrate layer 2 and heating resistor pad metal basalis 4 all adopt Cr, and Cr metal layer thickness is 50nm.
Heating resistor 3 and heating resistor pad 5 all adopt NiCr, and NiCr metal layer thickness is 200nm, and resistance value is 70 Ω.
Capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8 and electric capacity top electrode pad metal basalis 9 all adopt NiCr, and thickness is 180nm.
Capacitor lower electrode 7, capacitor lower electrode pad 10 and electric capacity top electrode pad 11 all adopt Al, and thickness is 150nm.
Capacitor dielectric thin layer 12 thickness are 400nm.
Electric capacity top electrode 13 adopts Al, and thickness is 20nm, and electric capacity top electrode 13 adopts grid type open-celled structure, and perforate is the square aperture of 20 μ m, is uniformly distributed, and perforate position is not island chain shape ventilating structure.
A method for making for heated type humidity sensor, its concrete steps are:
The first step is selected substrate 1
Select the two-sided glass for polished surface as substrate 1, thickness is 0.5mm.
Second step is made heater circuit
First adopt the method for magnetron sputtering to carry out the sputter of Cr metal level on substrate 1 surface, its thickness is 50nm.Sputter finishes the method for rear employing magnetron sputtering and carries out immediately the sputter of NiCr metal level, and its thickness is 200nm.Secondly photoresist is evenly spin-coated on to the layer on surface of metal that sputter has Cr and NiCr, carries out prebake conditions.Select heating resistor mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.Then the Cr after photoetching and NiCr metal level are immersed in Cr/NiCr corrosive liquid to heating resistor 3 and heating resistor pad 5 clear patterns together with substrate 1.The photoresist that finally adopts acetone solution heating resistor 3 and heating resistor pad 5 surfaces, completes photoetching corrosion.
The 3rd step is made capacitor lower electrode 7 and electrode pad
First adopt the method for magnetron sputtering to carry out the sputter of NiCr metal level on substrate 1 surface, its thickness is 180nm.Then adopt evaporation method at NiCr layer on surface of metal, to carry out the deposition of Al metal level, its thickness is 150nm.Secondly photoresist is evenly spin-coated on to substrate surface, carries out prebake conditions.Select capacitor lower electrode mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.Then the substrate that is coated with NiCr metal level and Al metal level is successively immersed in Al corrosive liquid and NiCr corrosive liquid to capacitor lower electrode 7, capacitor lower electrode pad 10 and electric capacity top electrode pad 11 and capacitor lower electrode metallic substrate layer 6, the clear patterns of capacitor lower electrode pad metal basalis 8 and electric capacity top electrode pad metal basalis 9.Finally by capacitor lower electrode 7, capacitor lower electrode pad 10 and electric capacity top electrode pad 11 and capacitor lower electrode metallic substrate layer 6, capacitor lower electrode pad metal basalis 8 and electric capacity top electrode pad metal basalis 9 are immersed in acetone soln together with substrate 1, dissolve photoresist, complete photoetching corrosion.
The 4th step is made electric capacity humidity-sensitive medium layer 12
First at capacitor lower electrode 7 and the surperficial spin coating polyamic acid of substrate 1, then 70 ℃ are toasted 15min; Secondly at polyamic acid surface spin coating photoresist, carry out prebake conditions.Select humidity sensing layer mask exposure, spray Tetramethylammonium hydroxide is removed photoresist, and carries out rear baking after deionized water rinsing again.Then adopt the mode of soaking acetone to remove the remaining photoresist in polyamic acid surface; Finally the polyamic acid layer after photoetching treatment is carried out to high temperature imidization together with substrate 1.Set gradient increased temperature program, heating rate is 1 ℃/min, by 80 ℃, starts to be incubated 10min; Medium temperature is 135 ℃, insulation 1.5h; The imidizate temperature in end stage is 350 ℃, insulation 3h.Finally obtaining its thickness is the polymkeric substance electric capacity humidity-sensitive medium layer 12 of 400nm.
The 5th step is made electric capacity top electrode 13
First adopt evaporation method on electric capacity humidity sensing layer 12 and substrate 1 surface, to carry out the deposition of Al metal level, its thickness is 20nm.Secondly photoresist is evenly spin-coated on to Al layer on surface of metal, carries out prebake conditions.Select electric capacity top electrode mask exposure, move to developing liquid developing, after deionized water rinsing, carry out again rear baking.Then the substrate 1 that is coated with Al metal level is immersed in Al corrosive liquid to electric capacity top electrode 13 clear patterns.The photoresist that finally adopts acetone solution electric capacity top electrode 13 surfaces, completes photoetching corrosion, obtains heated type humidity sensor.
Claims (9)
1. a heated type humidity sensor, comprise: substrate (1), characterized by further comprising: humidity sensitive electric capacity and heater circuit, wherein humidity sensitive electric capacity comprises: capacitor lower electrode metallic substrate layer (6), capacitor lower electrode (7), electric capacity humidity-sensitive medium layer (12), electric capacity top electrode (13), capacitor lower electrode pad (10), capacitor lower electrode pad metal basalis (8), electric capacity top electrode pad (11) and electric capacity top electrode pad metal basalis (9), heater circuit comprises: heating resistor (3), heating resistor metallic substrate layer (2), heating resistor pad (5) and heating resistor pad metal basalis (4), substrate (1) is square sheet, as supporting construction, is placed in lowermost layer, it is upper that capacitor lower electrode metallic substrate layer (6), capacitor lower electrode pad metal basalis (8), electric capacity top electrode pad metal basalis (9) are positioned at substrate (1), and capacitor lower electrode (7), capacitor lower electrode pad (10) and electric capacity top electrode pad (11) lay respectively in the capacitor lower electrode metallic substrate layer (6), capacitor lower electrode pad metal basalis (8), electric capacity top electrode pad metal basalis (9) of identical shaped size, capacitor lower electrode metallic substrate layer (6) is connected with capacitor lower electrode pad metal basalis (8), gapped between capacitor lower electrode metallic substrate layer (6) and electric capacity top electrode pad metal basalis (9), capacitor lower electrode pad metal basalis (8) and electric capacity top electrode pad metal basalis (9) are placed in the both sides of capacitor lower electrode metallic substrate layer (6), it is upper that electric capacity humidity-sensitive medium layer (12) covers capacitor lower electrode (7), do not cover capacitor lower electrode pad (10) and top electrode pad, electric capacity top electrode (13) is positioned at capacitor lower electrode (7) top that is coated with electric capacity humidity-sensitive medium layer (12), and electric capacity top electrode (13) afterbody lead-in wire contacts with electric capacity top electrode pad (11), heater circuit is surrounded on humidity sensitive electric capacity around, it is upper that heating resistor metallic substrate layer (2) and heating resistor pad metal basalis (4) are positioned at substrate (1), and heating resistor (3) and heating resistor pad (5) lay respectively in the heating resistor metallic substrate layer (2) and heating resistor pad metal basalis (4) of identical shaped size, heating resistor metallic substrate layer (2) is connected with heating resistor pad metal basalis (4), and two heating resistor pad metal basalises (4) are placed in the both sides of heating resistor metallic substrate layer (2), electric capacity humidity-sensitive medium layer (12) covers on heating resistor (3) and does not cover heating resistor pad (5), and electric capacity humidity-sensitive medium layer (12) plays the effect of surface passivation.
2. heated type humidity sensor according to claim 1, it is characterized in that: the substrate of heated type humidity sensor (1) is selected a kind of in the silicon chip after quartz, glass, pottery or surface oxidation, the at least one side of substrate (1) is polished surface and surface insulation, and the thickness of substrate (1) is 0.2mm～0.5mm.
3. heated type humidity sensor according to claim 1, it is characterized in that: heating resistor metallic substrate layer (2) and heating resistor pad metal basalis (4) are identical material, adopt any in NiCr, Cr, TiWu or Ta, thickness is 30nm～250nm.
4. heated type humidity sensor according to claim 1, it is characterized in that: heating resistor (3) and heating resistor pad (5) are identical material, adopt any in NiCr or Pt, thickness is 100nm～400nm, and resistance value is 30 Ω～150 Ω.
5. heated type humidity sensor according to claim 1, it is characterized in that: capacitor lower electrode metallic substrate layer (6), capacitor lower electrode pad metal basalis (8) and electric capacity top electrode pad metal basalis (9) are identical material, adopt any in NiCr, Cr, TiWu or Ta, thickness is 30nm～250nm.
6. heated type humidity sensor according to claim 1, it is characterized in that: capacitor lower electrode (7), capacitor lower electrode pad (10) and electric capacity top electrode pad (11) are identical material, adopt any material in Au, Cu, Al or Pt, thickness is 100nm～400nm.
7. heated type humidity sensor according to claim 1, is characterized in that: the thickness of electric capacity humidity-sensitive medium layer (12) is 300nm～1000nm.
8. heated type humidity sensor according to claim 1, it is characterized in that: electric capacity top electrode (13) adopts any in Au, Cu, Al or Pt, thickness is 5nm～100nm, electric capacity top electrode (13) adopts grid type open-celled structure, perforate is the square aperture of 5 μ m～50 μ m, is uniformly distributed; Perforate position is not island chain shape ventilating structure.
9. a method for making for heated type humidity sensor, is characterized in that concrete steps are:
The first step is selected substrate (1)
Select the substrate (1) of at least one mirror polish and surface insulation;
Second step is made heater circuit
Adopt evaporation method or sputtering method directly at the surperficial first plated metal basalis of substrate (1), then deposit heating resistor metal level, employing etching or the method for peeling off are made as heating resistor metallic substrate layer (2), heating resistor pad metal basalis (4), heating resistor (3) and heating resistor pad (5) by metallic substrate layer and heating resistor metal level;
The 3rd step is made capacitor lower electrode (7) and electrode pad
Adopt evaporation method or sputtering method directly at the surperficial first plated metal basalis of substrate (1), then deposited capacitances bottom electrode metal level, adopts etching or the method peeled off is made as capacitor lower electrode metallic substrate layer (6), capacitor lower electrode pad metal basalis (8), electric capacity top electrode pad metal basalis (9), capacitor lower electrode (7), capacitor lower electrode pad (10) and electric capacity top electrode pad (11) by metallic substrate layer and capacitor lower electrode metal level;
The 4th step is made electric capacity humidity-sensitive medium layer (12)
At substrate (1) top spin coating macromolecule prepolymer, and carry out prebake conditions;
Then macromolecule prepolymer is carried out to photoetching, etching, at capacitor lower electrode (7) and the upper capacitor dielectric thin layer that forms of heating resistor (3);
Finally the macromolecule prepolymer film after photoetching treatment is obtained to final electric capacity humidity-sensitive medium layer (12) together with substrate (1) through heating up;
The 5th step is made electric capacity top electrode (13)
Adopt evaporation method or sputtering method directly at electric capacity humidity-sensitive medium layer (12) surface deposition metal level, employing etching or the method for peeling off are made as electric capacity top electrode (13) by metal level.
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| CN201310610529.0A CN103698367B (en) | 2013-11-27 | 2013-11-27 | A kind of heated type humidity sensor and preparation method thereof |
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| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN106053393A (en) * | 2016-05-18 | 2016-10-26 | 南京信息工程大学 | Relative humidity sensor device based on nano coaxial cavity structure and surface plasmon effect and manufacturing method thereof |
| CN107144609A (en) * | 2017-04-01 | 2017-09-08 | 上海申矽凌微电子科技有限公司 | The manufacture method of moisture sensor and the moisture sensor manufactured using this method |
| CN107407624A (en) * | 2014-12-23 | 2017-11-28 | 贺利氏传感器技术有限责任公司 | For detecting sensor, sensing system, the method for operating sensor, the manufacture method of this type sensor and this type sensor applications of conductive and/or polarizable particle |
| CN109696205A (en) * | 2017-10-23 | 2019-04-30 | 南京开天眼无人机科技有限公司 | A kind of Temperature Humidity Sensor |
| CN110346423A (en) * | 2019-07-02 | 2019-10-18 | 浙江省北大信息技术高等研究院 | A kind of CMOS-MEMS humidity sensor |
| CN110849944A (en) * | 2019-11-28 | 2020-02-28 | 北京航天微电科技有限公司 | Single-heating type humidity sensor and manufacturing method thereof |
| CN111579603A (en) * | 2020-05-09 | 2020-08-25 | 北京航空航天大学 | Silicon-based capacitive humidity sensor integrating heating control and ultrasonic vibration |
| CN112378963A (en) * | 2020-11-04 | 2021-02-19 | 北京航天微电科技有限公司 | Humidity sensor with heating and temperature measuring functions and manufacturing method thereof |
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| CN117162596B (en) * | 2023-10-31 | 2024-02-23 | 江苏苏林木业有限公司 | Waterproof type multilayer fiberboard |
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