CN104062322A - Humidity sensor and preparation method thereof - Google Patents
Humidity sensor and preparation method thereof Download PDFInfo
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- CN104062322A CN104062322A CN201410328078.6A CN201410328078A CN104062322A CN 104062322 A CN104062322 A CN 104062322A CN 201410328078 A CN201410328078 A CN 201410328078A CN 104062322 A CN104062322 A CN 104062322A
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Abstract
The invention discloses a humidity sensor. The humidity sensor comprises a substrate, a silicon oxide layer formed on the substrate, a lower electrode and a heating electrode which are electroplated on the silicon oxide layer, a humidity sensitive layer which is coated on the lower electrode and the heating electrode by spinning, and an upper electrode which is electroplated on the humidity sensitive layer, wherein the lower electrode, the heating electrode and the upper electrode are made of metal nickel; the humidity sensitive layer is made of a high molecular material. With the adoption of the embodiment provided by the invention, the humidity sensor is simple in structure, high in sensitivity and good in linearity and is compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process.
Description
Technical field
The present invention relates to humidity sensor technical field, relate in particular to a kind of humidity sensor and preparation method thereof.
Background technology
The environment of humidity and people's life is closely bound up.The moisture instruments in early stage mainly comprises the humidity measurement instruments such as telescopic hygrometer, psychrometer and dew point instrument.But this traditional method of testing exists, and sensitivity is low, the shortcoming of poor accuracy and the aspect such as resolution is low, and non-electric test method is difficult to carry out systematization and integrated with modern communication equipment.
Along with the fast development of integrated circuit and semicon industry, utilizing new technique to prepare micro-nano sensor becomes one of global study hotspot.Therefore, humidity sensor is as the important component part of sensor field, also along with the fast development of integrated circuit and semicon industry, obtain swift and violent progress, occurred humidity sensor prepared by the humidity sensitive materials such as electrolyte, pottery and macromolecule at present.
Humidity sensor can be divided into following type according to principle of work: 1. resistance pressure type humidity sensor.After utilizing polymkeric substance to absorb hydrone, expand, the tension force producing after expanding causes the film on polymkeric substance to bend, thereby can obtain humidity value by recording crooked corresponding stress, but has the shortcoming of poor linearity.2. cantilever beam type humidity sensor.The humidity sensing polymer materials that utilization is attached on semi-girder is adsorbed near airborne vapour molecule, thereby expand the shape that produces stress changes semi-girder, causes that the variation of electric capacity measures humidity.Although can with CMOS(Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor (CMOS)) process compatible, in order to obtain high sensitivity, it is very thin that semi-girder often designs, and easily ruptures, greatly shorten serviceable life.3. thermocouple type humidity sensor.According to temperature difference Seebeck effect, utilize sensor in absorption cold and hot end temperature difference during vapour molecule, make cold and hot port direct voltage output signal, and also can by temperature sensor to external world environment temperature measure.But its poor sensitivity, is not suitable for accurate measurement.
Summary of the invention
The embodiment of the present invention proposes a kind of humidity sensor and preparation method thereof, simple in structure, highly sensitive, the linearity is good, and with CMOS process compatible.
The embodiment of the present invention provides a kind of humidity sensor, comprise substrate, be formed at the silicon oxide layer on described substrate, be plated on bottom electrode and heating electrode on described silicon oxide layer, be spun on the humidity-sensitive layer on described bottom electrode and described heating electrode, and be plated on the top electrode in described humidity-sensitive layer; Wherein, described bottom electrode, described heating electrode and described top electrode are made by metallic nickel; Described humidity-sensitive layer is made by macromolecular material.
Correspondingly, the embodiment of the present invention also provides a kind of preparation method of humidity sensor, comprising:
S1, provide one deck substrate, and on described substrate, form one deck silicon oxide layer;
S2, at described silicon oxide layer, power on and plate out bottom electrode and heating electrode; Described bottom electrode and described heating electrode are made by metallic nickel;
S3, on described bottom electrode and described heating electrode spin coating one deck humidity-sensitive layer; Described humidity-sensitive layer is made by macromolecular material;
S4, in described humidity-sensitive layer, power on and plate out top electrode; Described top electrode is made by metallic nickel.
Implement the embodiment of the present invention, there is following beneficial effect:
Humidity sensor that the embodiment of the present invention provides and preparation method thereof adopts MEMS Micro-Electro-Mechanical System, MEMS (micro electro mechanical system)) prepared by process technology, and volume is little, simple in structure, and highly sensitive, is easy to batch production; Humidity-sensitive layer is made by macromolecular material, and humidity is accurately measured, and improves the linearity and precision; Based on crystalline silicon substrates, and utilize the techniques such as sputter, plating to prepare, easy and CMOS process compatible.
Accompanying drawing explanation
Fig. 1 is the diagrammatic cross-section of an embodiment of humidity sensor provided by the invention;
Fig. 2 is the preparation method's of the humidity sensor provided by the invention schematic flow sheet of an embodiment;
Fig. 3 is the preparation method's of the humidity sensor provided by the invention schematic diagram of step S1;
Fig. 4 is the preparation method's of the humidity sensor provided by the invention schematic diagram of step S2;
Fig. 5 is the preparation method's of the humidity sensor provided by the invention schematic diagram of step S3.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Referring to Fig. 1, it is the structural representation of an embodiment of humidity sensor provided by the invention, comprise substrate 1, be formed at the silicon oxide layer 2 on substrate 1, be plated on bottom electrode 3 and heating electrode 4 on silicon oxide layer 2, be spun on the humidity-sensitive layer 5 on bottom electrode 3 and heating electrode 4, and be plated on the top electrode 6 in humidity-sensitive layer 5; Wherein, bottom electrode 3, heating electrode 4 and top electrode 6 are made by metallic nickel; Humidity-sensitive layer 5 is made by macromolecular material.
Wherein, substrate 1 is of a size of 2 cun, 4 cun or 6 cun.The thickness of silicon oxide layer 2 is 300 nm-800nm.Bottom electrode 3 and heating electrode 4 are in same plane, and thickness is 2 um-10um.Gap between bottom electrode 3 and heating electrode 4 is also filled to humidity-sensitive layer 5.Humidity-sensitive layer 5 is between bottom electrode 3 and top electrode 4, and thickness is 5 um-20um.The thickness of bottom electrode is 5 um-20um.
Further, humidity sensor also comprises the articulamentum being sputtered on silicon oxide layer 2, and is sputtered in the conductive layer on articulamentum.Wherein, articulamentum is made by crome metal or Titanium, and thickness is 20 nm-50nm.Conductive layer is made by metallic copper or metallic gold, and thickness is 80nm-150nm.
Further, humidity sensor also comprises the conductive layer being sputtered in humidity-sensitive layer 5.
Referring to Fig. 2, be the preparation method's of above-mentioned humidity sensor the schematic flow sheet of an embodiment, comprise that step S1 is to step S4, as follows:
S1, provide one deck substrate 1, and on substrate 1, form one deck silicon oxide layer 2.
As shown in Figure 3, provide the monocrystalline silicon of certain size (as 2 cun, 4 cun or 6 cun) as substrate 1, utilize the solution such as acid solution, organic solvent and deionized water to clean monocrystalline substrate, and dry up with nitrogen.And the method for utilizing thermal oxide forms the silicon oxide layer 2 that a layer thickness is 300nm-800nm in monocrystalline substrate.
S2, at silicon oxide layer 2, power on and plate out bottom electrode 3 and heating electrode 4; Bottom electrode 3 and heating electrode 4 are made by metallic nickel.
As shown in Figure 4, spin coating one deck optical cement on silicon oxide layer 2, and through steps such as oven dry, exposure, developments, figure dissolves bottom electrode 3 and heating electrode 4.Utilize the electroplanting device of metallic nickel, the optical cement after graphically powers on and plates out bottom electrode 3 and the heating electrode 4 that thickness is 2um-10um.
S3, on bottom electrode 3 and heating electrode 4 spin coating one deck humidity-sensitive layer 5; Humidity-sensitive layer 5 is made by macromolecular material.
As shown in Figure 5, on bottom electrode 3 and heating electrode 4, spin coating a layer thickness is the macromolecular material that 5um-20um has humidity sensitive effect, and dries, solidifies and process.Wherein, macromolecular material is polyimide, polystyrene etc.
S4, in humidity-sensitive layer 5, power on and plate out top electrode 6; Top electrode 6 is made by metallic nickel.
As shown in Figure 1, spin coating one deck optical cement in humidity-sensitive layer 5, and through steps such as oven dry, exposure, developments, figure dissolves top electrode 6.Utilize the electroplanting device of metallic nickel, the optical cement after graphically powers on and plates out the top electrode 6 that thickness is 2um-10um.And utilize the organic solvent of removing optical cement to remove unnecessary optical cement.
Further, before step S2, also comprise:
Sputter one deck articulamentum on silicon oxide layer 2.The crome metal that sputter a layer thickness is 20nm-50nm on silicon oxide layer or Titanium are as articulamentum, in order to increase the adhesion between film.
Sputter one deck conductive layer on articulamentum.The conductive layer that the metallic copper that sputter a layer thickness is 80nm-150nm on articulamentum or metallic gold are electroplated as bottom electrode.
Further, before step S4, also comprise:
Sputter one deck conductive layer in humidity-sensitive layer 5.The conductive layer that the metallic copper that sputter a layer thickness is 80nm-150nm in humidity-sensitive layer 5 or metallic gold are electroplated as top electrode.
Further, after step S4, also comprise:
Remove unnecessary macromolecular material in humidity-sensitive layer 5.Utilize the method for dry etching to remove unnecessary macromolecular material.
Utilize the unnecessary metal conducting layer of chemical etching solution removal.
Humidity sensor that the embodiment of the present invention provides and preparation method thereof adopts MEMS process technology to prepare, and volume is little, simple in structure, and highly sensitive, is easy to batch production; Humidity-sensitive layer is made by macromolecular material, and humidity is accurately measured, and improves the linearity and precision; Based on crystalline silicon substrates, and utilize the techniques such as sputter, plating to prepare, easy and CMOS process compatible.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (7)
1. a humidity sensor, it is characterized in that, comprise substrate, be formed at the silicon oxide layer on described substrate, be plated on bottom electrode and heating electrode on described silicon oxide layer, be spun on the humidity-sensitive layer on described bottom electrode and described heating electrode, and be plated on the top electrode in described humidity-sensitive layer; Wherein, described bottom electrode, described heating electrode and described top electrode are made by metallic nickel; Described humidity-sensitive layer is made by macromolecular material.
2. humidity sensor as claimed in claim 1, is characterized in that, described humidity sensor also comprises the articulamentum being sputtered on described silicon oxide layer, and is sputtered in the conductive layer on described articulamentum.
3. humidity sensor as claimed in claim 1 or 2, is characterized in that, described humidity sensor also comprises the conductive layer being sputtered in described humidity-sensitive layer.
4. a preparation method for humidity sensor, is characterized in that, comprising:
S1, provide one deck substrate, and on described substrate, form one deck silicon oxide layer;
S2, at described silicon oxide layer, power on and plate out bottom electrode and heating electrode; Described bottom electrode and described heating electrode are made by metallic nickel;
S3, on described bottom electrode and described heating electrode spin coating one deck humidity-sensitive layer; Described humidity-sensitive layer is made by macromolecular material;
S4, in described humidity-sensitive layer, power on and plate out top electrode; Described top electrode is made by metallic nickel.
5. the preparation method of humidity sensor as claimed in claim 4, is characterized in that, before described step S2, also comprises:
Sputter one deck articulamentum on described silicon oxide layer;
Sputter one deck conductive layer on described articulamentum.
6. the preparation method of the humidity sensor as described in claim 4 or 5, is characterized in that, before described step S4, also comprises:
Sputter one deck conductive layer in described humidity-sensitive layer.
7. the preparation method of humidity sensor as claimed in claim 4, is characterized in that, after described step S4, also comprises:
Remove macromolecular material unnecessary in described humidity-sensitive layer.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104627947A (en) * | 2015-02-09 | 2015-05-20 | 江西师范大学 | CMOS (complementary metal oxide semiconductor) humidity sensor and forming method of CMOS humidity sensor |
| CN105158305A (en) * | 2015-10-23 | 2015-12-16 | 上海集成电路研发中心有限公司 | Method for manufacturing humidity sensor compatible with CMOS process |
| CN106404038A (en) * | 2016-08-31 | 2017-02-15 | 成都市和平科技有限责任公司 | Humidity sensor |
| CN109813778A (en) * | 2019-01-30 | 2019-05-28 | 宁波大学 | A kind of integrated micro-nano sensor and preparation method thereof |
| CN111307910A (en) * | 2020-03-14 | 2020-06-19 | 深圳聚德寿科技有限公司 | Switch type zirconium-based oxygen core |
| CN111665282A (en) * | 2020-06-14 | 2020-09-15 | 沈阳航空航天大学 | Quick response moisture-in-oil humidity-sensitive capacitor |
| CN114235903A (en) * | 2020-09-09 | 2022-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas sensor and manufacturing method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104627947A (en) * | 2015-02-09 | 2015-05-20 | 江西师范大学 | CMOS (complementary metal oxide semiconductor) humidity sensor and forming method of CMOS humidity sensor |
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| CN109813778A (en) * | 2019-01-30 | 2019-05-28 | 宁波大学 | A kind of integrated micro-nano sensor and preparation method thereof |
| CN109813778B (en) * | 2019-01-30 | 2023-11-21 | 宁波大学 | Integrated micro-nano sensor and manufacturing method thereof |
| CN111307910A (en) * | 2020-03-14 | 2020-06-19 | 深圳聚德寿科技有限公司 | Switch type zirconium-based oxygen core |
| CN111665282A (en) * | 2020-06-14 | 2020-09-15 | 沈阳航空航天大学 | Quick response moisture-in-oil humidity-sensitive capacitor |
| CN114235903A (en) * | 2020-09-09 | 2022-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas sensor and manufacturing method thereof |
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