CN105158305A - Method for manufacturing humidity sensor compatible with CMOS process - Google Patents
Method for manufacturing humidity sensor compatible with CMOS process Download PDFInfo
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- CN105158305A CN105158305A CN201510697842.1A CN201510697842A CN105158305A CN 105158305 A CN105158305 A CN 105158305A CN 201510697842 A CN201510697842 A CN 201510697842A CN 105158305 A CN105158305 A CN 105158305A
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Abstract
The invention discloses a method for manufacturing a humidity sensor compatible with a CMOS process. Firstly, a sacrificial layer is formed on a lower electrode, an upper electrode is formed on the sacrificial layer, then the sacrificial layer is removed, and a humidity sensitive material is filled. The problem of air leakage of the humidity sensitive material when the upper electrode is directly prepared on the humidity sensitive material in the prior art is avoided. Therefore, the upper electrode can be manufactured by adopting a common machine table compatible with the CMOS process without a special metal deposition device, and accordingly the cost of a production device and the manufacturing cost of the humidity sensor are reduced.
Description
Technical field
The present invention relates to semiconductor processing and manufacturing technical field, more specifically, relate to humidity sensor manufacture method that is a kind of and CMOS technology compatibility.
Background technology
Humidity, typically refers to the content of water vapor in air, is used for reflecting the dry wet degree of air.Mankind's daily life, industrial and agricultural production activity and vegeto-animal existence and growth, all have close relationship with the ambient humidity of surrounding.Humidity sensor is used for the measurement of humidity, and it based on humidity functional material, the physical influence relevant with humidity or the feature of chemical reaction can occur, and realizes measurement function by converting humidity physical quantity to electric signal.
Humidity sensor, according to the difference of its principle of work, can be divided into telescopic, vaporation-type, dew point instrument, electronic type, electromagnetic type etc., wherein based on the investigation and application of electronic type.What Recent study was more is capacitive based electronic type humidity sensor, the main operational principle of this kind of humidity sensor is: during the vapour molecule of wet sensitive dielectric material in adsorption and desorption air, its specific inductive capacity can change, thus cause the capacitance of device to change, then be converted into the electric signal relevant to humidity through treatment circuit and be read out.
Capacitance type humidity sensor mainly can be divided into vertical flat plate capacitor type and horizontal plate capacitor type two class structure.As its name suggests, vertical flat plate capacitor type refers to that the positive and negative electrode plate of humidity sensor is arranged with upper and lower relative vertical mode; Wherein, electric pole plate is provided with through hole or directly adopts porosint preparation, and the steam in external environment needs to have an effect through the through hole of electric pole plate or hole and humidity-sensitive material, and electric capacity just can be caused to change.Horizontal plate capacitor type is also referred to as interdigital capacitor type, and the interdigited electrode staggered relative of its positive and negative electrode plate is arranged, and is positioned on same level direction, humidity-sensitive material be filled in two battery lead plates each interdigital between, can directly contact with external environment.
Refer to Fig. 1, Fig. 1 is the structural representation of a kind of vertical flat plate capacitor type humidity sensor of the prior art.As shown in Figure 1, this vertical flat plate capacitor type humidity sensor is produced on to be had on the substrate 101 of cmos circuit, the top electrode 104 comprising substrate 101, bottom electrode 102, humidity-sensitive material 103 from bottom to top and be formed at above humidity-sensitive material.Its preparation method is generally and first forms bottom electrode 102 on the substrate 101, then deposits humidity-sensitive material layer 103, then on humidity-sensitive material, forms top electrode 104.Wherein, top electrode 104 can directly adopt porosint to be formed, or on electric pole plate, forms through hole by lithographic etch process, and steam can arrive humidity-sensitive material layer 103 by this porosint or through hole.
In the structure of above-mentioned existing vertical flat plate capacitor type humidity sensor, because needs form metal electrode on humidity-sensitive material, and conventional humidity-sensitive material mostly is organic material and porosint, it is easy to, when deposit top electrode, gas leak phenomenon occurs, therefore need to adopt special metal deposition tool, causing cannot be compatible with CMOS technology, causes manufacture technics cost higher.
Summary of the invention
The object of the invention is to overcome the above-mentioned defect that prior art exists, humidity sensor manufacture method that is a kind of and CMOS technology compatibility be provided, can solve prior art cannot with the problem of CMOS technology compatibility, reduce costs.
For achieving the above object, technical scheme of the present invention is as follows:
A humidity sensor manufacture method with CMOS technology compatibility, comprising:
Step S01: provide one to complete substrate prepared by cmos device, forms bottom electrode over the substrate;
Step S02: form first medium layer on the bottom electrode, and form a sacrifice layer in first medium layer;
Step S03: form top electrode on sacrifice layer;
Step S04: remove sacrifice layer, forms open cavity;
Step S05: along cavity upwards, forms the humidity-sensitive material be filled between upper and lower electrode.
Preferably, in step S02, first in first medium layer, form a groove, then, in groove, fill sacrificial layer material and graphically, form sacrifice layer.
Preferably, when forming groove, bottom electrode is exposed.
Preferably, when forming groove, between channel bottom and bottom electrode, the first medium layer of 200-2000 dust is retained.
Preferably, described sacrificial layer material is silicon dioxide, SiN or amorphous silicon.
Preferably, the thickness of described sacrifice layer is 500nm-5 μm.
Preferably, in step S03, at the coated one deck separation layer of top electrode outer surface.
Preferably, comprise at the coated one deck separation layer of top electrode outer surface: first on sacrifice layer, deposition of second dielectric layer is also graphical, form the spacer medium bottom top electrode, then top electrode is formed, then, continue deposition of second dielectric layer and graphically, form the side wall of top electrode and the spacer medium at its top.
Preferably, in step S05, adopt CVD or spin coating proceeding, upwards form humidity-sensitive material layer along cavity.
Preferably, described humidity-sensitive material is organic polymer or porous media material.
As can be seen from technique scheme, the present invention is when manufacturing humidity sensor, by first forming sacrifice layer on the bottom electrode, and top electrode is formed on sacrifice layer, and then remove sacrifice layer and fill humidity-sensitive material, avoid in prior art the problem that humidity-sensitive material gas leakage occurs when directly preparing top electrode on humidity-sensitive material, therefore can adopt and make top electrode with the common board of CMOS technology compatibility, and without the need to adopting special metal deposition tool, thus reduce the manufacturing cost of production equipment cost and humidity sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of vertical flat plate capacitor type humidity sensor of the prior art;
Fig. 2 is a kind of humidity sensor manufacture method process flow diagram with CMOS technology compatibility of the present invention;
Fig. 3 a-Fig. 3 e is the processing step schematic diagram preparing a kind of humidity sensor according to the method for Fig. 2.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in following embodiment, when describing embodiments of the present invention in detail, in order to clearly represent structure of the present invention so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out partial enlargement, distortion and simplify processes, therefore, should avoid being understood in this, as limitation of the invention.
In following the specific embodiment of the present invention, refer to Fig. 2, Fig. 2 is a kind of humidity sensor manufacture method process flow diagram with CMOS technology compatibility of the present invention; Meanwhile, refer to Fig. 3 a-Fig. 3 e, Fig. 3 a-Fig. 3 e is the processing step schematic diagram preparing a kind of humidity sensor according to the method for Fig. 2, the substep device architecture formed in Fig. 3 a-Fig. 3 e, corresponding with each step in Fig. 2 so that understand respectively.As shown in Figure 2, a kind of humidity sensor manufacture method with CMOS technology compatibility of the present invention, comprises the following steps:
As shown in frame 01, step S01: provide one to complete substrate prepared by cmos device, forms bottom electrode over the substrate.
Refer to Fig. 3 a.First on silicon substrate 301, complete the chip manufacturing of CMOS treatment circuit.As an optional embodiment, the wafer silicon chip 301 of one 8 inches can be adopted as substrate, and adopt known CMOS technology, silicon chip is formed conventional cmos device structure (figure slightly).After completing cmos circuit manufacture, can adopt and prepare humidity sensor with the technique of CMOS postchannel process compatibility, namely humidity sensor and cmos circuit adopt Single-Chip Integration, to improve chip overall performance, reduce costs.
Then, on silicon substrate 301, deposition forms humidity sensor bottom electrode 302.Such as, metallic aluminium can be adopted as lower electrode material, its formation method can adopt CMOS known rear road aluminum interconnecting technique to complete.
As shown in frame 02, step S02: form first medium layer on the bottom electrode, and form a sacrifice layer in first medium layer.
Refer to Fig. 3 b.After the preparation process completing bottom electrode 302, first can adopt PECVD deposit one first medium layer 303.Then, photoetching, etching technics can be adopted in first medium layer 303 to form a groove, and the such as degree of depth is 500nm-5 μm.Then, CVD or spin coating proceeding can be adopted to fill sacrificial layer material in the trench and graphically, form the sacrifice layer 304 that thickness is 500nm-5 μm.As optional embodiment, the material of described sacrifice layer can select silicon dioxide, SiN or amorphous silicon.
In one embodiment, first can adopt the silicon dioxide first medium layer 303 that PECVD deposit 1 μm is thick, then adopt photoetching and etching technics in first medium layer 303, form one 1 μm dark groove, directly first medium layer 303 is etched away, expose the bottom electrode 302 of beneath trenches.Also can select to retain certain thickness first medium layer in beneath trenches, its thickness can be 200-2000 dust, as the separation layer of bottom electrode.Such as, can etch away the first medium layer 303 that 900nm is thick, residue 100nm first medium layer covers lower electrode surface, thus forms the dark groove of 900nm.Then, recycling PECVD deposit 1.5 μm of amorphous silicons, then adopt the graphical amorphous silicon of CMP, the sacrifice layer 304 that finally formation 1 μm is thick.
As shown in frame 03, step S03: form top electrode on sacrifice layer.
Refer to Fig. 3 c.Next, sacrifice layer 304 and dielectric layer 303 are formed the top electrode 305 of humidity sensor.In the present embodiment, adopt the aluminium interconnection process of CMOS standard universal to form upper electrode metal, metal thickness can be 1.2 μm; Then, recycling photoetching and the graphical upper electrode metal of etching technics, form top electrode 305.
As an optional embodiment, can at the coated one deck separation layer of the outer surface of upper electrode metal, in order to the erosion of isolated steam to metal electrode.Such as, separation layer can be formed at the bottom of top electrode 305, side and top by deposit dielectric material.In the present embodiment, first can adopt PECVD deposit 800 dust silicon dioxide second dielectric layer on sacrifice layer, then by photoetching and this silicon dioxide second dielectric layer of etching, form the spacer medium bottom top electrode; Adopt the aluminium interconnection process of CMOS standard universal to form upper electrode metal again, metal thickness is 1 μm; Then PECVD is adopted to continue the silicon dioxide second dielectric layer of deposit 1000 dust again, and adopt photoetching and etching technics to form the spacer medium at top electrode side wall and top, thus form complete top electrode 305 and the coated second dielectric layer isolation (figure slightly) of outer surface thereof.
As shown in frame 04, step S04: remove sacrifice layer, forms open cavity.
Refer to Fig. 3 d.Next, dry method or wet corrosion technique can be adopted to remove sacrifice layer 304, form cavity 306.In the present embodiment, xenon difluoride dry release process can be adopted to remove amorphous silicon sacrifice layer 304, form the cavity 306 of upward opening.
As shown in frame 05, step S05: along cavity upwards, forms the humidity-sensitive material be filled between upper and lower electrode.
Refer to Fig. 3 e.Next, need to form humidity-sensitive material 307 in cavity 306, make it be filled between upper and lower electrode, and complete the preparation of humidity sensor.Humidity-sensitive material can adopt known organic polymer humidity-sensitive material, such as polyimide, polymethyl methacrylate class and derivant thereof, with the multipolymer etc. of other monomers; Or adopt known porous medium humidity-sensitive material, such as porous ceramics sill, porous metal oxide and other porous semi-conductor materials etc.CVD or spin coating proceeding can be adopted, upwards form humidity-sensitive material layer 307 along cavity.The thickness of humidity-sensitive material layer is 500nm-5 μm.In the present embodiment, polyimide can be adopted as humidity-sensitive material.Preparation technology is the certain thickness polyimide precursor of first spin coating, and by photoetching, develop graphical polyimide precursor, and then through bakingout process, forms 1.5 μm of thick Kapton humidity-sensitive material layers.Kapton humidity-sensitive material is filled between upper and lower electrode.Finally, the preparation of humidity sensor of the present invention is completed.
In sum, the present invention is when manufacturing humidity sensor, by first forming sacrifice layer on the bottom electrode, and top electrode is formed on sacrifice layer, and then remove sacrifice layer and fill humidity-sensitive material, avoid in prior art the problem that humidity-sensitive material gas leakage occurs when directly preparing top electrode on humidity-sensitive material, therefore can adopt and make top electrode with the common board of CMOS technology compatibility, and without the need to adopting special metal deposition tool, thus reduce the manufacturing cost of production equipment cost and humidity sensor.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization instructions of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1., with the humidity sensor manufacture method of CMOS technology compatibility, it is characterized in that, comprising:
Step S01: provide one to complete substrate prepared by cmos device, forms bottom electrode over the substrate;
Step S02: form first medium layer on the bottom electrode, and form a sacrifice layer in first medium layer;
Step S03: form top electrode on sacrifice layer;
Step S04: remove sacrifice layer, forms open cavity;
Step S05: along cavity upwards, forms the humidity-sensitive material be filled between upper and lower electrode.
2. the humidity sensor manufacture method with CMOS technology compatibility according to claim 1, is characterized in that, in step S02, first in first medium layer, forms a groove, then, fills sacrificial layer material and graphical in groove, forms sacrifice layer.
3. the humidity sensor manufacture method with CMOS technology compatibility according to claim 2, is characterized in that, when forming groove, exposes bottom electrode.
4. the humidity sensor manufacture method with CMOS technology compatibility according to claim 2, is characterized in that, when forming groove, retains the first medium layer of 200-2000 dust between channel bottom and bottom electrode.
5. the humidity sensor manufacture method with CMOS technology compatibility according to claim 1 and 2, it is characterized in that, described sacrificial layer material is silicon dioxide, SiN or amorphous silicon.
6. the humidity sensor manufacture method with CMOS technology compatibility according to claim 1 and 2, it is characterized in that, the thickness of described sacrifice layer is 500nm-5 μm.
7. the humidity sensor manufacture method with CMOS technology compatibility according to claim 1, is characterized in that, in step S03, at the coated one deck separation layer of top electrode outer surface.
8. the humidity sensor manufacture method with CMOS technology compatibility according to claim 7, it is characterized in that, comprise at the coated one deck separation layer of top electrode outer surface: first on sacrifice layer, deposition of second dielectric layer is also graphical, form the spacer medium bottom top electrode, then top electrode is formed, then, continue deposition of second dielectric layer and graphically, form the side wall of top electrode and the spacer medium at its top.
9. the humidity sensor manufacture method with CMOS technology compatibility according to claim 1, is characterized in that, in step S05, adopts CVD or spin coating proceeding, upwards forms humidity-sensitive material layer along cavity.
10. according to claim 1 or 9 with the humidity sensor manufacture method of CMOS technology compatibility, it is characterized in that, described humidity-sensitive material is organic polymer or porous media material.
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| CN201510697842.1A CN105158305A (en) | 2015-10-23 | 2015-10-23 | Method for manufacturing humidity sensor compatible with CMOS process |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455251A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Miniature humidity sensor |
| CN1657927A (en) * | 2005-03-08 | 2005-08-24 | 东南大学 | Relative humidity sensor compatible of CMOS process |
| TW200531124A (en) * | 2004-03-03 | 2005-09-16 | Kuender & Co Ltd | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof |
| CN101825511A (en) * | 2010-05-04 | 2010-09-08 | 电子科技大学 | Minitype capacitance type gas sensor and preparation method thereof |
| CN104062322A (en) * | 2014-07-10 | 2014-09-24 | 苏州能斯达电子科技有限公司 | Humidity sensor and preparation method thereof |
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- 2015-10-23 CN CN201510697842.1A patent/CN105158305A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455251A (en) * | 2003-06-12 | 2003-11-12 | 东南大学 | Miniature humidity sensor |
| TW200531124A (en) * | 2004-03-03 | 2005-09-16 | Kuender & Co Ltd | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof |
| CN1657927A (en) * | 2005-03-08 | 2005-08-24 | 东南大学 | Relative humidity sensor compatible of CMOS process |
| CN101825511A (en) * | 2010-05-04 | 2010-09-08 | 电子科技大学 | Minitype capacitance type gas sensor and preparation method thereof |
| CN104062322A (en) * | 2014-07-10 | 2014-09-24 | 苏州能斯达电子科技有限公司 | Humidity sensor and preparation method thereof |
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