CN101355828B - Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip - Google Patents
Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip Download PDFInfo
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- CN101355828B CN101355828B CN2007100443230A CN200710044323A CN101355828B CN 101355828 B CN101355828 B CN 101355828B CN 2007100443230 A CN2007100443230 A CN 2007100443230A CN 200710044323 A CN200710044323 A CN 200710044323A CN 101355828 B CN101355828 B CN 101355828B
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Abstract
The invention provides an integrated circuit based on an SOI silicon chip, a method for monolithically integrating a capacitor type micro-silicon microphone and a chip. An SOI substrate is provided with a first area and a second area. A device layer of the SOI substrate positioned on the second area is taken as one electrode of the capacitor. Firstly, the integrated circuit is generated on the device layer of the first area; secondly, the device layer of the second area adopts the low temperature technique below 400 DEG C to generate a sacrificial layer, a conductive membrane is formed on the sacrificial layer by the low temperature technique; and finally, etching solution is fed to partially erode the sacrificial layer from a gas vent and the capacitor type micro-silicon microphone is formed, and the conductive membrane is taken as the other electrode of the capacitor, thereby reducing the size of the chip, lowering the manufacturing cost, avoiding adopting the high temperature technique to reduce the stress of the device layer taken as a vibrating membrane, and avoiding adopting the complex vibrating membrane with complicated technique and the poor repetitiveness to reduce the stress.
Description
Technical field
The present invention relates to a kind of integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone and monolithic integrated chip of formation based on soi wafer.
Background technology
Microphone is a kind of transducer that voice signal is converted into the signal of telecommunication.The basic structure of Electret Condencer Microphone comprises a sensitive membrane as electric capacity one utmost point, and a back pole plate is as the other utmost point of electric capacity.When voice signal acts on microphone, acoustic pressure causes sensitive membrane to produce deformation, thereby causes that the electric capacity between sensitive membrane and the back pole plate changes, and this capacitance variations is converted into the signal of telecommunication via subsequent process circuit again.
Since Bell laboratory scientist invented electret capacitor microphone (ECM) in 1962, through the development of decades, ECM had been widely used in every field.But the traditional E CM at high temperature resident electric charge in its sensitive membrane can leak, and then causes ECM to lose efficacy.And in the packaging technology of consumer electronics product; Device automation surface attachment process need experience the welding temperature up to 260 ℃; So ECM can only rely on the manpower hand assembled when being assembled to circuit board; Be accompanied by the development in consumer electronics product markets such as mobile phone, PDA, MP3 player and digital camera, ECM loses the upper hand in the consumer electronics product field of these production in enormous quantities just gradually.
MEMS is a new technology of high speed development in recent years, and it adopts advanced semiconductor fabrication process, can realize the batch manufacturing of MEMS device.Compare with the respective devices that adopts conventional art to make, the MEMS device is in high temperature resistant, volume, power consumption, weight and obvious advantages is arranged in price.And utilize the capacitance type minitype silicon microphone of MEMS technology manufacturing owing to can tolerate high temperature in the surface mount, and becoming the substitute of ECM product just rapidly, the occupation rate of market of capacitance type minitype silicon microphone had suitable high growth in recent years.
Utilize capacitance type micro-silicon microphone and important difference of traditional E CM of the processing of MEMS technology to be that bias voltage applies mode.ECM setovers to it through the resident electric charge that is stored in the microphone sensitive diaphragm; And the capacitance type micro-silicon microphone is directly to microphone bias voltage to be provided through external power; Need not in sensitive membrane, store resident electric charge, thus the danger that not resident electric charge at high temperature runs off, so the capacitance type micro-silicon microphone can bear the high temperature of required experience in the attachment process of automation surface; Thereby can adopt automation surface attachment process, manpower is manual to be installed and need not adopt.
At present, MEMS device and integrated circuit (IC) generally adopt the multi-disc integration mode integrated, promptly adopt the different processes flow process to come the independent respectively making of accomplishing circuit and MEMS device by different vendor, and then both hybrid package are integrated into a functional unit.The benefit of this method is that the manufacturing process difficulty is little, and the design of MEMS device and manufacturing can be optimized separately.This kind method all has application in multiple MEMS device is integrated, resistance pressure type transducer etc. for example, the shortcoming of this kind method be between MEMS device and the integrated circuit to be electrically connected path long and be subject to the interference signal influence.
For some application that is subject to disturb, like the transducer of types such as the piezoelectric type of high output impedance and condenser type, MEMS device and IC carry out that monolithic is integrated then more to have superiority, and can effectively improve the device overall performance and reduce the influence of interference noise.The characteristics of capacitance type micro-silicon microphone high output impedance; Cause it to receive the influence of environmental interference noise and parasitic capacitance bigger, therefore little silicon microphone adopts the monolithic integration mode and can improve a lot at aspects such as device overall performance, size, power consumptions with respect to adopting the multi-disc integrated form.
Realize that MEMS device and the single chip integrated manufacturing approach of IC have three kinds: the first, accomplish the making of MEMS device earlier, and then on same substrate, accomplish the making of IC; The second, MEMS device and IC single-step process in manufacturing process is intersected each other and is carried out; The third method i.e. " back semiconductor technology ", finishes the IC of standard earlier, and then on same substrate, accomplishes the making of MEMS device.Wherein, the shortcoming of first kind and second kind way is to introduce pollution, causes IC to lose efficacy, and might cause equipment pollution.The benefit of the third integrated way is to avoid preceding two kinds of pollutions that integrated approach possibly cause, and can make full use of existing ripe IC standard manufacturing process, helps to improve rate of finished products and reduction to investment of devices; The shortcoming of the third integrated way is after IC accomplishes, and for not influencing the IC performance, in the MEMS device manufacturing processes high-temperature technology can not arranged thereafter.Because after the IC manufacturing process is accomplished, can not bear the high temperature more than 400 ℃ as the metals such as aluminium of metal electrode, high temperature also possibly cause the circuit devcie performance to change in addition.Existing the third integrated approach realizes on common silicon chip that all this method need use polysilicon, metal or composite membrane as vibrating membrane, faces the difficult problem of a Stress Control so at present, and technology is also comparatively complicated simultaneously.
Therefore, how to solve that shortcoming that prior art exists is real to have become the technical task that those skilled in the art need to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of need not experience high temperature and need not adopt again composite membrane as diaphragm based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone.
Another object of the present invention is to have highly sensitive based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone.
In order to achieve the above object; Provided by the invention based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone; Comprise step: 1) a SOI substrate is provided, and surface thereof has the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone; Device layer on said second area is as a utmost point of electric capacity; 2) generate integrated circuit being on the device layer of said first area; 3) adopt the low temperature process that is lower than 400 ℃ to generate sacrifice layer being on the device layer of said second area; 4) adopt low temperature process on said sacrifice layer, to form conducting film; 5) carry out photoetching and etching process to form gas port at said conducting film; 6) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of said SOI substrate to form; 7) corrosive liquid gets into partial corrosion from said gas port and forms by the capacitance sensor of said conducting film as another utmost point of electric capacity behind the said sacrifice layer.
Can adopt dry etching (for example deep trouth reflection ion etching method) to form said back of the body chamber, also can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching to form said back of the body chamber with potassium hydroxide and TMAH.
The said sacrifice layer left part in back that partly is corroded can be in the edge of said conducting film, for example discontinuously arranged at the multiple spot at said conducting film edge or a bit.
The material of said sacrifice layer can be silica, metal, photoresist or polyimides organic substance; When sacrificial layer material is silica, amorphous silicon, photoresist or polyimide material, can adopt the said sacrifice layer of dry etching, when sacrificial layer material is metal or photoresist material, can adopt the said sacrifice layer of wet etching.
Said conductive layer can be the composite bed that adopts physical vapor deposition process, chemical plating or the formed metal level of electroplating technology and dielectric layer material to form.
Of the present invention based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, comprising: a surface has and is used to the SOI substrate making the first area of integrated circuit and be used to make the second area of capacitance type micro-silicon microphone; Be grown in the integrated circuit district of the integrated circuit on the device layer that is positioned on the first area; And comprise and be grown in the articulamentum on the device layer that is positioned on the said second area and be grown on the said articulamentum and the back of the body chamber that forms of being corroded as the conductive layer of another utmost point of electric capacity, on another surface of said SOI substrate, and the capacitance type micro-silicon microphone area of a plurality of gas ports of forming at said conductive layer.
Can adopt dry etching (for example deep trouth reflection ion etching method) to form said back of the body chamber, also can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching to form said back of the body chamber with potassium hydroxide and TMAH.
The material of said articulamentum is silica, metal, photoresist or polyimides organic substance, and it can be in the whole edges of said conducting film continuously, also can disperse to be in one or more of said conducting film edge.
Said conductive layer can be the composite bed that adopts physical vapor deposition process, chemical plating or the formed metal level of electroplating technology and dielectric layer material to form.
In sum; Integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone and the monolithic integrated chip of formation based on soi wafer of the present invention proposed " the back semiconductor technology " of a cover based on soi wafer; This technology integrates IC-components and capacitance type micro-silicon microphone; And the vibrating membrane of the device layer making capacitance type micro-silicon microphone of employing soi wafer, can reduce chip size, reduce manufacturing cost; Simultaneously can avoid adopting high-temperature technology to reduce diaphragm stress, also can avoid the complicated and repeated not good complex vibration mould mode of adopting process to reduce stress.
Description of drawings
Fig. 1 to Fig. 5 is the steps flow chart sketch map of the method for integrating monolithic of integrated circuit and the capacitance type micro-silicon microphone based on soi wafer of the present invention.
Fig. 6 is the three-dimensional profile perspective of the monolithic integrated chip of integrated circuit and the capacitance type micro-silicon microphone based on soi wafer of the present invention.
Embodiment
See also Fig. 1 to Fig. 6; To be a cover be used to realize the method for integrating monolithic of IC-components with the MEMS device based on " the back semiconductor technology " of soi wafer to the method for integrating monolithic of integrated circuit and the capacitance type micro-silicon microphone based on soi wafer of the present invention; Said method must not change standard semiconductor technology; Only need to proceed the manufacturing of MEMS device on the circuit soi wafer of standard semiconductor technology accomplishing; In this execution mode, be that example is elaborated with integrated circuit and capacitance type micro-silicon microphone.
It mainly may further comprise the steps the method for integrating monolithic of said integrated circuit and capacitance type micro-silicon microphone based on soi wafer:
The first step: a SOI substrate 20 is provided, and surface thereof has and is used to make the first area 22 of integrated circuit and what be used to make the capacitance type micro-silicon microphone is the second area 21 of little silicon microphone, is positioned at device layer 41 on the second area 21 as the utmost point of electric capacity.
Second step: on the device layer of said first area 22, generate the integrated circuit (for example field-effect transistor, resistance capacitance etc.) that cooperates with little silicon microphone.For for simplicity; Said integrated circuit is that example describes with MOS memory (MOSFET) only; The field oxide 25a, gate oxide 25b, source that promptly on the device layer of said first area 22, form the MOSFET device respectively by standard semiconductor technology leak doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 etc., after said integrated circuit is accomplished, expose the part of devices layer region 50 that is positioned on the second area 21.
The 3rd step: on the part of devices layer region 50 of said second area 21, adopt the low temperature process that is lower than 400 ℃ to generate sacrificial layer material; And then can obtain the sacrifice layer 51 of figure through technologies such as photoetching, corrosion, said sacrifice layer 51 materials can be organic substances such as silica, metal, photoresist or polyimides.
The 4th step: adopting low temperature process on said sacrifice layer 51, to form conducting film is back pole plate; The way that for example can adopt physical vapor deposition (PVD) technology (like sputter, evaporation), chemical plating earlier or electroplate forms metal level; And then the dielectric layer material that combines low temperature to generate to form said conducting film be composite bed 30; Carry out the composite bed 30 that photoetching and etching process can obtain figure at composite bed 30, as the back pole plate of little silicon microphone.
The 5th step: at said conducting film is that composite bed 30 carries out photoetching and etching process to form a plurality of gas ports 31.
The 6th step: carry out photoetching and corrode carrying on the back chamber 33 with respect to second area 21 places to form on said SOI substrate 20 another surfaces; Can adopt anisotropic etchant to carry out wet etching (for example with potassium hydroxide KOH, TMAH TMAH etc. are as corrosive liquid) or dry etching (for example deep trouth reflection ion etching DRIE) and can form said back of the body chamber 33 to oxide layer 40.
The 7th step: corrosive liquid gets into the said sacrifice layer of partial corrosion 51 backs from a plurality of gas ports 31 and forms by the capacitance type micro-silicon microphone of said composite bed 30 as another utmost point of electric capacity; Usually, sacrifice layer 51 materials can adopt wet etching when being metal or photoresist material; When sacrifice layer 51 materials be silica, amorphous silicon, photoresist, and polyimide material in a kind of the time can adopt dry etching; Be noted that; Left part 51a can be in the edge of said composite bed 30 after said sacrifice layer 51 parts were corroded; It can discontinuously be distributed in said composite bed 30 edges one or more, but also continuous distribution is at whole edges of said composite bed 30, and the sacrifice layer that is corroded part is then in said back pole plate and the intermembranous formation of said sound sensitive space 32.
Be noted that; Of the present invention is not to exceed with above-mentioned sequence of steps based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone; Those skilled in the art can for example can carry out the corrosion of sacrifice layer earlier and accomplish the step that generates back of the body chamber again, in addition according to actual conditions set-up procedure order; Also can method of the present invention be merged in the making flow process of capacitance type micro-silicon microphone according to the making flow process of other capacitance type micro-silicon microphone.
Of the present inventionly mainly comprise: SOI substrate 20, integrated circuit district, and capacitance type micro-silicon microphone area based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone; In this execution mode, the monolithic integrated chip that forms with integrated circuit and little silicon microphone is that example is elaborated.
Said SOI substrate 20 surface thereof have the second area 21 that is used to make the first area 22 of integrated circuit and is used to make the capacitance type micro-silicon microphone.
Be in the utmost point that device layer 41 on the said second area 21 is used as electric capacity promptly as the sound sensitive film of little silicon microphone.
Said integrated circuit district is grown in the integrated circuit on the device layer that is positioned on the first area 22; With the integrated circuit is that MOS memory (MOSFET) describes for example; The field oxide 25a, gate oxide 25b, source that promptly on the device layer 41 of said first area 22, form the MOSFET device respectively by standard semiconductor technology leak doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 etc., after said integrated circuit is accomplished, expose the part of devices layer region 50 that is positioned on the second area 21.
Said capacitance type micro-silicon microphone area comprises and is grown in the articulamentum on the device layer 41 that is positioned on the said second area 21 and is grown on the said articulamentum and as the conductive layer of another utmost point of electric capacity; Wherein, Said articulamentum is part 51a left after sacrifice layer 51 is corroded; Its material can be silica, metal, photoresist or polyimides organic substance; Said articulamentum can be in the whole edges of said conducting film continuously; Also can disperse to be in one or more of said conducting film edge; When the said device layer 41 that is on the said second area is back pole plate for sound sensitive film and said conductive layer; Said capacitance type micro-silicon microphone area also is included in said SOI substrate 20 another surfaces the be corroded back of the body chamber 33 that forms, and a plurality of gas ports 31 of forming at said conductive layer, and said back of the body chamber 33 can be adopted anisotropic etchant to carry out wet etching (being corrosive liquid with potassium hydroxide and TMAH for example) and formed, and also can adopt dry etching (for example adopting deep trouth reflection ion etching) to form.Said conductive layer can be the composite bed 30 that adopts physical vapor deposition process, chemical plating or metal level that electroplating technology forms and dielectric layer material to form; Simultaneously because articulamentum only is positioned at the edge of said back pole plate; Therefore between said back pole plate and said sound sensitive film, has space 32; Gas port 31 on sound process back pole plate 30 when passing air gap 32 arrival sound sensitive films, can cause that the sound sensitive film produces deformation; And then cause capacitance variations; Because the sound sensitive film forms by the device layer that does not almost have residual stress, the signal of little silicon microphone links to each other with integrated circuit through electric conducting material 34, and said integrated circuit changes the deformation signal of electric capacity into voltage signal, and also finally being transferred to the next stage circuit carries out handled.
In sum; The method for integrating monolithic of integrated circuit and the capacitance type micro-silicon microphone based on soi wafer of the present invention can realize experiencing high temperature on soi wafer and need not adopt composite membrane integrated again as the monolithic of sound sensitive film; Simultaneously articulamentum is in the edge of sound sensitive film, with respect to around for the sound sensitive film that is completely fixed, it has higher sensitivity; In addition; Almost do not have the soi wafer device layer of stress to be used as the sound sensitive film because of adopting, so promptly can avoid adopting high-temperature technology to reduce diaphragm stress, can avoid the complicated and repeated not good complex vibration mould mode of adopting process to reduce stress yet; Can also reduce the size of chip, reduce manufacturing cost.
Claims (23)
1. one kind based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that comprising step:
1) a SOI substrate is provided, surface thereof has the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone;
2) generate integrated circuit being on the device layer of said first area;
3) adopt the low temperature process that is lower than 400 ℃ to generate sacrifice layer being on the device layer of said second area; Be positioned at device layer on the second area as electric capacity one utmost point;
4) adopt low temperature process on said sacrifice layer, to form conducting film;
5) carry out photoetching and etching process to form gas port at said conducting film;
6) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of said SOI substrate to form;
7) corrosive liquid gets into partial corrosion from said gas port and forms by said conducting film behind the said sacrifice layer as the little silicon microphone of the electric capacity of another utmost point of electric capacity;
The little silicon microphone of said electric capacity is connected with integrated circuit through electric conducting material.
2. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt dry etching to form said back of the body chamber.
3. as claimed in claim 2 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt deep trouth reflection ion etching to form said back of the body chamber.
4. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt anisotropic etchant to carry out wet etching to form said back of the body chamber.
5. as claimed in claim 4 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: said anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
6. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: left part was in the edge of said conducting film after said sacrifice layer partly was corroded.
7. as claimed in claim 6 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: the said sacrifice layer left discontinuously arranged multiple spot of part in back that partly is corroded at said conducting film edge.
8. as claimed in claim 6 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: said sacrifice layer partly be corroded the left part in back be in said conducting film the edge a bit.
9. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: the material of said sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance.
10. as claimed in claim 9 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: when sacrificial layer material is metal or photoresist material, adopt the said sacrifice layer of wet etching.
11. as claimed in claim 9 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: when sacrificial layer material be silica, photoresist, and polyimide material in a kind of the time adopt the said sacrifice layer of dry etching.
12. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: said conductive layer is the composite bed that metal level and dielectric layer material form.
13. as claimed in claim 12 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: said metal level adopts any one technology in physical vapor deposition process, chemical plating and the plating to form.
14. one kind based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that comprising:
SOI substrate, surface thereof have the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone;
The integrated circuit district comprises the integrated circuit that is grown on the device layer that is positioned at the first area;
The capacitance type micro-silicon microphone area comprises being grown in the articulamentum on the device layer that is positioned at said second area and being grown on the said articulamentum and the back of the body chamber that forms of being corroded as the conducting film of another utmost point of electric capacity, on another surface of said SOI substrate, and a plurality of gas ports of forming at said conductive layer; Be positioned at device layer on the second area as electric capacity one utmost point; The little silicon microphone of said electric capacity district is connected with the integrated circuit district through electric conducting material.
15. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt anisotropic etchant to carry out wet etching to form said back of the body chamber.
16. as claimed in claim 15 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: said anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
17. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt dry etching to form said back of the body chamber.
18. as claimed in claim 17 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt deep trouth reflection ion etching to form said back of the body chamber.
19. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: said articulamentum is in the whole edges of said conducting film continuously.
20. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: said articulamentum dispersion is in one or more of said conducting film edge.
21. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: the material of said articulamentum is a kind of in silica, metal, photoresist and the polyimides organic substance.
22. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: said conductive layer is the composite bed that metal level and dielectric layer material form.
23. as claimed in claim 22 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: said metal level is by adopting any one technology in physical vapor deposition process, chemical plating and the plating to be formed.
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| CN2007100443230A CN101355828B (en) | 2007-07-27 | 2007-07-27 | Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip |
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| CN2007100443230A CN101355828B (en) | 2007-07-27 | 2007-07-27 | Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip |
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| CN102625224B (en) * | 2012-03-31 | 2015-07-01 | 歌尔声学股份有限公司 | Chip and method for integrating capacitance silicon microphone and integrated circuit chip |
| CN102740207B (en) * | 2012-06-15 | 2015-08-05 | 歌尔声学股份有限公司 | Chip of a kind of integrated silicon micro-microphone and CMOS integrated circuit and preparation method thereof |
| JP6237978B2 (en) * | 2013-03-13 | 2017-11-29 | オムロン株式会社 | Capacitive sensor, acoustic sensor and microphone |
| CN103369450A (en) * | 2013-06-25 | 2013-10-23 | 歌尔声学股份有限公司 | Manufacturing method of waterproof thin sheet used in microphone |
| CN105246013B (en) * | 2014-07-11 | 2019-10-15 | 晶镁电子股份有限公司 | Microphone apparatus |
| CN113346864B (en) * | 2021-05-28 | 2022-01-04 | 杭州星阖科技有限公司 | Bulk acoustic wave resonator and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352515A (en) * | 2001-12-07 | 2002-06-05 | 清华大学 | Monolithic integrated capacitor type silicon base micro microphone and its producing process |
| CN1684546A (en) * | 2004-04-14 | 2005-10-19 | 北京大学 | Microsilicon microphone and its preparing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352515A (en) * | 2001-12-07 | 2002-06-05 | 清华大学 | Monolithic integrated capacitor type silicon base micro microphone and its producing process |
| CN1684546A (en) * | 2004-04-14 | 2005-10-19 | 北京大学 | Microsilicon microphone and its preparing method |
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