CN202425038U - Monolithic integration chip with integrated circuit and capacitance-type micro-silicon microphone - Google Patents
Monolithic integration chip with integrated circuit and capacitance-type micro-silicon microphone Download PDFInfo
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- CN202425038U CN202425038U CN201220036103XU CN201220036103U CN202425038U CN 202425038 U CN202425038 U CN 202425038U CN 201220036103X U CN201220036103X U CN 201220036103XU CN 201220036103 U CN201220036103 U CN 201220036103U CN 202425038 U CN202425038 U CN 202425038U
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Abstract
The utility model discloses a monolithic integration chip with an integrated circuit and a capacitance-type micro-silicon microphone on the basis of an SOI (Silicon On Insulator) substrate and a semiconductor technology. According to the monolithic integration chip, the micro-silicon microphone comprises a back electrode plate, a sound sensitive film, a sacrificial layer and other structures manufactured on a base chip subjected to a standard semiconductor technology by utilizing a low temperature process, thereby integrating the micro-silicon microphone with circuits existing on the base chip. Therefore, the integrated circuit component is integrated with the micro-silicon microphone to form the monolithic integration chip with high sensitivity.
Description
Technical field
The utility model relates to a kind of based on the integrated circuit of SOI substrate and the monolithic integrated chip of capacitance type micro-silicon microphone, belongs to the MEMS field.
Background technology
Microphone is a kind of transducer that voice signal is converted into the signal of telecommunication.The basic structure of Electret Condencer Microphone comprises as the sensitive membrane of electric capacity one utmost point with as the back pole plate of the other utmost point of electric capacity; When voice signal acts on microphone; Acoustic pressure causes sensitive membrane to produce deformation; And then causing that the electric capacity between sensitive membrane and the back pole plate changes, this capacitance variations can be converted into the signal of telecommunication by subsequent process circuit.
Since Bell laboratory scientist invented electret capacitor microphone (ECM) in 1962, through the development of decades, ECM had been widely used in every field.But the traditional E CM at high temperature resident electric charge in its sensitive membrane can leak, and then causes ECM to lose efficacy.And in the technology of assembling consumer electronics product; Device automation surface attachment process often need experience the welding temperature up to 260 ℃; So ECM is when being fitted to circuit board; Can only rely on the manpower hand assembled at present, be accompanied by the development in consumer electronics product markets such as mobile phone, PDA, MP3 player and digital camera, ECM loses the upper hand in the consumer electronics product field of these production in enormous quantities just gradually.
MEMS is a new technology of high speed development in recent years, and its adopts sophisticated semiconductor manufacturing process, can realize the batch manufacturing of MEMS device.Compare with corresponding traditional devices, the MEMS device is in high temperature resistant, volume, power consumption, weight and obvious advantages is arranged in price.And the micro silicon microphone that utilizes the MEMS technology to make receives the advantage of high temperature in the surface mount owing to have the capability of doing sth, and becomes the substitute of ECM product just rapidly, and there was suitable high growth in micro silicon microphone market in recent years.
Utilize little silicon microphone and important difference of traditional E CM of the processing of MEMS technology to be that bias voltage applies mode.ECM setovers to it through the resident electric charge that is stored in the microphone sensitive diaphragm; And little silicon microphone is directly to microphone bias voltage to be provided through external power; Need not in sensitive membrane, store resident electric charge, so the danger that not resident electric charge at high temperature runs off, therefore little silicon microphone can bear the high temperature of required experience in the attachment process of automation surface; Thereby can adopt automation surface attachment process, manpower is manual to be installed but not adopt.
At present; MEMS device and integrated circuit (IC) generally adopt the multi-disc integration mode integrated; Promptly adopt the independent respectively making of accomplishing circuit and MEMS device on different chips of different processes flow process, and then both hybrid package are integrated into a functional unit by different vendor.The benefit of this method is that the manufacturing process difficulty is little, and the design of MEMS device and manufacturing can be optimized separately.This kind method all has application in multiple MEMS device is integrated, for example resistance pressure type transducer etc.
Yet use for some, like the transducer of types such as the piezoelectricity of high output impedance and electric capacity, MEMS device and IC carry out that monolithic is integrated more to have superiority, and can effectively improve the device overall performance and reduce the influence of interference noise.The capacitance type micro-silicon microphone promptly has the characteristics of high output impedance; Cause it to receive the influence of environmental interference noise and parasitic capacitance bigger, therefore little silicon microphone adopts the monolithic integration mode and can improve a lot at aspects such as device overall performance, size, power consumptions with respect to adopting the multi-disc integrated form.
Realize that MEMS device and the single chip integrated manufacture method of IC have three kinds: the first, accomplish the making of MEMS device earlier, and then on same substrate, accomplish the making of IC; The second, MEMS device and IC single-step process in manufacturing process is intersected each other and is carried out; The third method i.e. " back semiconductor technology ", adopts standard technology to make IC earlier, and then on same substrate, accomplishes the making of MEMS device.
The shortcoming of first kind and second method is possibly introduce pollution, causes IC to lose efficacy, and has further and possibly cause equipment pollution.The benefit of the third integrated approach is the pollution that can avoid preceding two kinds of integrated approaches to introduce, also can make full use of existing ripe IC standard manufacturing process, needn't revise the IC manufacturing process, and this helps to improve rate of finished products and reduces investment of devices.The shortcoming of the third integrated approach is after IC accomplishes, and for not influencing the IC performance, in the MEMS device manufacturing processes high-temperature technology can not arranged thereafter, because after the IC manufacturing process accomplishes, can not bear the high temperature more than 400 ℃ as the metals such as aluminium of metal electrode.And have materials such as adopting polysilicons in the MEMS technology now as structural material more, and the temperature of preparation polysilicon generally is higher than 400 ℃.
Therefore, how to solve the problem that prior art exists and on same substrate, accomplish the IC and the making of MEMS device of standard, reality has become the technical task that those skilled in the art need to be resolved hurrily.
The utility model content
The purpose of the utility model be to provide a kind of based on the SOI substrate, have the monolithic integrated chip of highly sensitive integrated circuit and capacitance type micro-silicon microphone.
For solving the problems of the technologies described above; The utility model adopts following technical scheme: the monolithic integrated chip of a kind of integrated circuit and capacitance type micro-silicon microphone; Said monolithic integrated chip is provided with the SOI substrate; Said SOI substrate is provided with first surface and reaches and said first surface opposing second surface; Said first surface is provided with first area and second area; Generate on the wherein said first area integrated circuit is arranged; Generate on the said second area capacitance type micro-silicon microphone is arranged; Said integrated circuit and said capacitance type micro-silicon microphone are electrically connected together, said capacitance type micro-silicon microphone comprise be arranged at on-chip first pole plate of said SOI, second pole plate relative, the cavity between said first pole plate and said second pole plate with said first pole plate, link to each other with said second pole plate and in order to the anchor point that supports said second pole plate, be arranged on the said SOI substrate and run through the back of the body chamber of said second surface and be arranged on the said SOI substrate and be communicated with said cavity and some the holes in said back of the body chamber, said first pole plate and said second pole plate constitute two pole plates of microphone electric capacity; Wherein said first pole plate is the back pole plate of said capacitance type micro-silicon microphone, and the sound sensitive film that said second pole plate is said capacitance type micro-silicon microphone and the material of said second pole plate are the polycrystalline silicon germanium film.
As the further technical scheme of the utility model; Said SOI substrate comprises silicon substrate, is covered in the insulating oxide silicon layer on the said silicon substrate and is covered in the silicon device layer on the said insulating oxide silicon layer; Said first surface is positioned on the said silicon device layer; Said second surface is positioned on the said silicon substrate, and said first pole plate is formed by said silicon device layer.
As the further technical scheme of the utility model, said silicon substrate and said insulating oxide silicon layer are run through in said back of the body chamber.
As the further technical scheme of the utility model, said silicon device layer is run through in said sound hole.
As the further technical scheme of the utility model, said second pole plate is to offer the narrow groove that is communicated with said cavity on movable structure and the said sound sensitive film.
As the further technical scheme of the utility model; Said integrated circuit is a MOS memory, and this MOS memory comprises field oxide, source leakage doped region, grid conductive layer, dielectric insulation layer, metal conducting layer and passivation layer.
As the further technical scheme of the utility model, metal conducting layer on the said first area and dielectric insulation layer further extend to said second area.
As the further technical scheme of the utility model; The material of said second pole plate is identical with said anchor point, said anchor point be in continuously said sound sensitive film whole edges, or the edge that is in said sound sensitive film that disperses one or more, or be in the center of said sound sensitive film.
As the further technical scheme of the utility model, said capacitance type micro-silicon microphone comprises the dielectric insulation layer that covers on said first pole plate, and said anchor point is positioned on this dielectric insulation layer.
As the further technical scheme of the utility model, said polycrystalline silicon germanium film adopts the low-pressure vapor phase depositing technics or the plasma enhancing vapor deposition process that are lower than 400 ℃ to generate.
Compared with prior art, the monolithic integrated chip of integrated circuit of the utility model and capacitance type micro-silicon microphone can adopt low temperature process can IC-components be integrated with micro silicon microphone, and then has high sensitivity.
Description of drawings
Fig. 1 to Fig. 6 is the single chip integrated manufacturing process sketch map of the utility model integrated circuit and capacitance type micro-silicon microphone.
Fig. 7 is the schematic perspective view of the monolithic integrated chip of the utility model integrated circuit and capacitance type micro-silicon microphone.
Embodiment
The single chip integrated manufacture method of the utility model integrated circuit and capacitance type micro-silicon microphone is used to realize that the monolithic of circuit devcie and MEMS device is integrated.This manufacture method does not need standard semiconductor technology is changed; Only need to proceed the manufacturing of MEMS device on the circuit silicon chip of standard semiconductor technology accomplishing, below will be integrated into example and be elaborated with monolithic based on the integrated circuit of SOI substrate and little silicon microphone.
The single chip integrated manufacture method of the utility model integrated circuit and capacitance type micro-silicon microphone mainly comprises the steps:
The first step: please join shown in Figure 1; One SOI is provided (Silicon On Insulator; Silicon on the dielectric substrate) substrate 20, and its first surface (being upper surface in the present embodiment) has the second area 22 that is used to generate the first area 21 of integrated circuit and is used to generate the capacitance type micro-silicon microphone.Said SOI substrate 20 comprise in order to as the silicon substrate 20a of SOI substrate, be covered in the insulating oxide silicon layer 20b on the silicon substrate 20a and be covered in the silicon device layer 20c on the insulating oxide silicon layer 20b.
Second step: please join shown in Figure 1ly, on said first area 21, generate and the integrated circuit that is electrically connected of capacitance type micro-silicon microphone according to the standard semiconductor technological process, said integrated circuit can be field-effect transistor, resistance capacitance etc.Be simplicity of illustration, the integrated circuit in this execution mode is that example describes with MOS memory (MOSFET) only.The MOSFET that on said first area 21, is formed by standard semiconductor technology comprises field oxide 25a, source leakage doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 etc.Simultaneously; Field oxide 25a on the first area 21, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 further extend to said second area 22, field oxide 25a, dielectric insulation layer 25c, metal conducting layer 26 and the passivation layer 27 together made when having with the making integrated circuit on the promptly said second area 22.
The 3rd step: please join shown in Figure 2ly, remove field oxide 25a, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27 on said second area 22 tops, to expose silicon device layer 20c.Then, adopt deep trouth reactive ion etching (DRIE) technology or photoetching and etching technics to get rid of part silicon device layer 20c, and etching is from stopping on the insulating oxide silicon layer 20b.On said second area 22, whole said silicon device layer 20c is as first pole plate (being back pole plate in the present embodiment) of microphone electric capacity.Through above-mentioned etching, back pole plate figure and a plurality of holes 31 on said back pole plate, have been formed.This back pole plate figure can be different shapes such as circle, rectangle.Said sound hole 31 has functions such as realizing regulating sound sensitive vibration of membrane damping, conducting sound and help release.
The 4th step: please join shown in Figure 3ly, above silicon substrate 20a and insulating oxide silicon layer 20b, adopt to be lower than 400 ℃ low temperature deposition technology deposit sacrifice layer 32.Said sacrifice layer 32 also can be said hole 31 growth inside in grown on top, and final the filling expired sound hole 31 and covered the flatness layer 321 on the dielectric insulation layer 25c in formation above the sound hole 31.The material of said sacrifice layer 32 includes but not limited to adopt low-pressure vapor phase deposit (LPCVD) or plasma to strengthen polycrystalline germanium (Poly Ge) film that vapor deposition (PECVD) technology generates, and using plasma strengthens the silica that vapor deposition (PECVD) technology generates.
The 5th step: please join shown in Figure 4ly, adopt low-pressure vapor phase depositing technics or the plasma be lower than 400 ℃ to strengthen vapor deposition process, on sacrifice layer 32, generate polycrystalline silicon germanium (Poly Si1-xGex) film 33.Said polycrystalline silicon germanium film 33 also covers dielectric insulation layer 25c and goes up with follow-up formation anchor point 32a except covering on the sacrifice layer 32.Above-mentioned arts demand adopts silane, germane, borine etc. as reactant; Flow, pressure, the ratio that can regulate each reactant as required waits and forms needed SiGe ratio, can be met the polycrystalline silicon germanium film 33 of certain stress and corrosion-resistant requirement like this.Then, this polycrystalline silicon germanium film 33 is carried out photoetching and etching, to form second pole plate (being the sound sensitive film in the present embodiment) of microphone electric capacity.Simultaneously, also realized the purpose that is electrically connected with metal conducting layer 26, and then made said capacitance type micro-silicon microphone and said integrated circuit realize both being electrically connected through said polycrystalline silicon germanium film 33.The shape of said second pole plate 33 can be circle, rectangle etc.
The 6th step: please join shown in Figure 5; In said SOI substrate 20 and first surface opposing second surface (being lower surface in the present embodiment) corresponding to carrying out photoetching in second area 22 places; Adopt anisotropic etchant wet etching (for example adopting potassium hydroxide (KOH) or TMAH (TMAH) etc.) or dry etching (for example deep trouth reactive ion etching) to remove the partial oxidation silicon insulating barrier 20b of SOI substrate 20 subsequently, form back of the body chamber 34 thus as corrosive liquid.This back of the body chamber 34 has functions such as the sound of transmission, adjusting frequency response.Said back of the body chamber 34 links to each other with sacrifice layer 32 in being filled in hole 31.
The 7th step: please join shown in Figure 6,31 said sacrifice layer 32 of corrosion and the dielectric insulation layer 25c from said sound hole, thus make second pole plate become movable structure.In this execution mode, if sacrifice layer 32 is the polycrystalline germanium material, then corrosive liquid is the hydrogen peroxide solution of heating.Because the speed of hydrogen peroxide solution corrosion polycrystalline silicon germanium and polycrystalline germanium differs greatly, thus can adopt the hydrogen peroxide solution corrosive liquid of heating to corrode the said sacrifice layer 32 that forms by polycrystalline germanium from said sound hole 31, and can not corrode second pole plate that forms by polycrystalline silicon germanium.Erode dielectric insulation layer 25c with diluent hydrofluoric acid solution subsequently.
If the material of sacrifice layer 32 is a silica, then can directly adopt dilute hydrofluoric acid to erode dielectric insulation layer 25c and sacrifice layer 32 simultaneously.
The sacrifice layer 32 that is filled in the hole 31 is corroded, to expose the said sound hole 31 that is communicated with back of the body chamber 34.The flatness layer 321 of said sacrifice layer 32 and the dielectric insulation layer 25c that is positioned under this flatness layer 321 are corroded, to form the cavity 36 between sound sensitive film and back pole plate.Part (promptly covering the part on the dielectric insulation layer 25c) left after said sacrifice layer 32 is corroded forms said anchor point 32a, in order to support said sound sensitive film.Said anchor point 32a can be in whole edges of sound sensitive film continuously, also can disperse to be in one or more of edge of sound sensitive film, also can be in the center of sound sensitive film.This scheme that said anchor point 32a is in the center of sound sensitive film can make the sound sensitive film all insensitive to the stress of making or encapsulation is introduced, and then makes that the properties of product consistency is better.
In addition, when making, narrow groove 35 can on said sound sensitive film, be offered according to actual needs, to improve the performance of capacitance type micro-silicon microphone.
Please join Fig. 6 and shown in Figure 7, the monolithic integrated chip of making according to above method 10 based on the integrated circuit of SOI substrate and capacitance type micro-silicon microphone comprises SOI substrate 20 with first area 21 and second area 22, is created on the integrated circuit on the first area 21 and is created on the capacitance type micro-silicon microphone on the second area 22.Said SOI substrate 20 comprise in order to as the silicon substrate 20a of SOI substrate, be covered in the insulating oxide silicon layer 20b on the silicon substrate 20a and be covered in the silicon device layer 20c on the insulating oxide silicon layer 20b.Said silicon device layer 20c is provided with first surface (being upper surface in the present embodiment), and said silicon substrate 20a is provided with and first surface opposing second surface (being lower surface in the present embodiment).Said first area 21 and second area 22 are positioned on the first surface.
Said integrated circuit comprises field oxide 25a, source leakage doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and passivation layer 27.Need to prove: in the process of making integrated circuit, dielectric insulation layer 25c on the first area 21 and metal conducting layer 26 further extend to said second area 22 at least.
Said capacitance type micro-silicon microphone comprises first pole plate that formed by said silicon device layer 20c (being back pole plate in the present embodiment), be deposited on dielectric insulation layer 25c on the said silicon device layer 20c, second pole plate (in the present embodiment be sound sensitive film), the cavity 36 first pole plate and second pole plate between relative with first pole plate, be deposited on the dielectric insulation layer 25c and in order to support the anchor point 32a of second pole plate.Said first pole plate and second pole plate constitute two pole plates of microphone electric capacity.The material of said second pole plate and anchor point 32a is the polycrystalline silicon germanium film, and this polycrystalline silicon germanium film adopts the low-pressure vapor phase depositing technics or the plasma enhancing vapor deposition process that are lower than 400 ℃ to generate.Said anchor point 32a be in continuously the sound sensitive film whole edges, or the edge that is in the sound sensitive film that disperses one or more, or be in the center of sound sensitive film.
In addition, said capacitance type micro-silicon microphone also comprises the back of the body chamber 34 of running through second surface and is communicated with cavity 36 and some the holes 31 of carrying on the back chamber 34.Whole silicon substrate 20a and insulating oxide silicon layer 20b are run through in said back of the body chamber 34.Said sound hole 31 is arranged at silicon device layer 20c and runs through whole silicon device layer 20c.Said second pole plate is a movable structure, and offers the narrow groove that is communicated with said cavity 36 on the said sound sensitive film to improve the performance of capacitance type micro-silicon microphone.
Said integrated circuit and capacitance type micro-silicon microphone are electrically connected together through metal conducting layer 26.
In sum; The utility model proposes the single chip integrated manufacture method based on the integrated circuit and the capacitance type micro-silicon microphone of SOI substrate of a cover " back semiconductor technology "; Be included in structures such as adopting low temperature process making back pole plate, sound sensitive film, sacrifice layer on the substrate of accomplishing standard semiconductor technology and form little silicon microphone; To realize having the integrated of circuit on little silicon microphone same substrate, so can IC-components be integrated formation with micro silicon microphone and have highly sensitive monolithic integrated chip.
Above-described embodiment is merely technological thought and the characteristics of setting forth the utility model; Its purpose is to make the personage who knows this technology can understand the content of the utility model and implements according to this; But can not be as the protection range of the utility model; Be every according to spirit that the utility model disclosed and modify or change, must think the protection range of including the utility model in.The utility model requires the scope of protection to be as the criterion with the scope that appended claims defines.
Claims (10)
1. the monolithic integrated chip of integrated circuit and capacitance type micro-silicon microphone; Said monolithic integrated chip is provided with the SOI substrate; Said SOI substrate is provided with first surface and reaches and said first surface opposing second surface; Said first surface is provided with first area and second area; Generate on the wherein said first area integrated circuit is arranged; Generate on the said second area capacitance type micro-silicon microphone is arranged; Said integrated circuit and said capacitance type micro-silicon microphone are electrically connected together; It is characterized in that: said capacitance type micro-silicon microphone comprise be arranged at on-chip first pole plate of said SOI, second pole plate relative, the cavity between said first pole plate and said second pole plate with said first pole plate, link to each other with said second pole plate and in order to the anchor point that supports said second pole plate, be arranged on the said SOI substrate and run through the back of the body chamber of said second surface and be arranged on the said SOI substrate and be communicated with said cavity and some the holes in said back of the body chamber; Said first pole plate and said second pole plate constitute two pole plates of microphone electric capacity, and wherein said first pole plate is the back pole plate of said capacitance type micro-silicon microphone, and the sound sensitive film that said second pole plate is said capacitance type micro-silicon microphone and the material of said second pole plate are the polycrystalline silicon germanium film.
2. monolithic integrated chip as claimed in claim 1; It is characterized in that: said SOI substrate comprises silicon substrate, is covered in the insulating oxide silicon layer on the said silicon substrate and is covered in the silicon device layer on the said insulating oxide silicon layer; Said first surface is positioned on the said silicon device layer; Said second surface is positioned on the said silicon substrate, and said first pole plate is formed by said silicon device layer.
3. monolithic integrated chip as claimed in claim 2 is characterized in that: said silicon substrate and said insulating oxide silicon layer are run through in said back of the body chamber.
4. monolithic integrated chip as claimed in claim 2 is characterized in that: said silicon device layer is run through in said sound hole.
5. monolithic integrated chip as claimed in claim 1 is characterized in that: said second pole plate is to offer the narrow groove that is communicated with said cavity on movable structure and the said sound sensitive film.
6. monolithic integrated chip as claimed in claim 1; It is characterized in that: said integrated circuit is a MOS memory, and this MOS memory comprises field oxide, source leakage doped region, grid conductive layer, dielectric insulation layer, metal conducting layer and passivation layer.
7. monolithic integrated chip as claimed in claim 6 is characterized in that: metal conducting layer on the said first area and dielectric insulation layer further extend to said second area.
8. monolithic integrated chip as claimed in claim 1; It is characterized in that: the material of said second pole plate is identical with said anchor point, said anchor point be in continuously said sound sensitive film whole edges, or the edge that is in said sound sensitive film that disperses one or more, or be in the center of said sound sensitive film.
9. monolithic integrated chip as claimed in claim 1 is characterized in that: said capacitance type micro-silicon microphone comprises the dielectric insulation layer that covers on said first pole plate, and said anchor point is positioned on this dielectric insulation layer.
10. monolithic integrated chip as claimed in claim 1 is characterized in that: said polycrystalline silicon germanium film adopts the low-pressure vapor phase depositing technics or the plasma enhancing vapor deposition process that are lower than 400 ℃ to generate.
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| CN201220036103XU CN202425038U (en) | 2012-02-06 | 2012-02-06 | Monolithic integration chip with integrated circuit and capacitance-type micro-silicon microphone |
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| CN201220036103XU CN202425038U (en) | 2012-02-06 | 2012-02-06 | Monolithic integration chip with integrated circuit and capacitance-type micro-silicon microphone |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281663A (en) * | 2013-06-27 | 2013-09-04 | 苏州敏芯微电子技术有限公司 | Manufacturing method for integrated circuit and capacitive type micro-silicon microphone single chip integration |
| CN110366084A (en) * | 2019-06-06 | 2019-10-22 | 七色堇电子科技（上海）有限公司 | A kind of semiconductor devices and preparation method thereof and electronic device |
-
2012
- 2012-02-06 CN CN201220036103XU patent/CN202425038U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281663A (en) * | 2013-06-27 | 2013-09-04 | 苏州敏芯微电子技术有限公司 | Manufacturing method for integrated circuit and capacitive type micro-silicon microphone single chip integration |
| CN110366084A (en) * | 2019-06-06 | 2019-10-22 | 七色堇电子科技（上海）有限公司 | A kind of semiconductor devices and preparation method thereof and electronic device |
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