CN101355828A - Integrating method for integrated circuit base on SOI silicon chip and capacitance type micro-silicon microphone single slice as well as chip - Google Patents
Integrating method for integrated circuit base on SOI silicon chip and capacitance type micro-silicon microphone single slice as well as chip Download PDFInfo
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- CN101355828A CN101355828A CNA2007100443230A CN200710044323A CN101355828A CN 101355828 A CN101355828 A CN 101355828A CN A2007100443230 A CNA2007100443230 A CN A2007100443230A CN 200710044323 A CN200710044323 A CN 200710044323A CN 101355828 A CN101355828 A CN 101355828A
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Abstract
The invention provides an integrated circuit based on an SOI silicon chip, a method for monolithically integrating a capacitor type micro-silicon microphone and a chip. An SOI substrate is provided with a first area and a second area. A device layer of the SOI substrate positioned on the second area is taken as one electrode of the capacitor. Firstly, the integrated circuit is generated on the device layer of the first area; secondly, the device layer of the second area adopts the low temperature technique below 400 DEG C to generate a sacrificial layer, a conductive membrane is formed on the sacrificial layer by the low temperature technique; and finally, etching solution is fed to partially erode the sacrificial layer from a gas vent and the capacitor type micro-silicon microphone is formed, and the conductive membrane is taken as the other electrode of the capacitor, thereby reducing the size of the chip, lowering the manufacturing cost, avoiding adopting the high temperature technique to reduce the stress of the device layer taken as a vibrating membrane, and avoiding adopting the complex vibrating membrane with complicated technique and the poor repetitiveness to reduce the stress.
Description
Technical field
The present invention relates to a kind of integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone and monolithic integrated chip of formation based on soi wafer.
Background technology
Microphone is a kind of transducer that voice signal is converted into the signal of telecommunication.The basic structure of Electret Condencer Microphone comprises a sensitive membrane as electric capacity one utmost point, and a back pole plate is as the other utmost point of electric capacity.When voice signal acts on microphone, acoustic pressure causes sensitive membrane to produce deformation, thereby causes that the electric capacity between sensitive membrane and the back pole plate changes, and this capacitance variations is converted into the signal of telecommunication via subsequent process circuit again.
Since 1962 invention electret capacitor microphone (ECM), through the development of decades, ECM has been widely used in every field from Bell laboratory scientist.But the traditional E CM at high temperature resident electric charge in its sensitive membrane can leak, and then causes ECM to lose efficacy.And in the packaging technology of consumer electronics product, device automation surface attachment process need experience the welding temperature up to 260 ℃, so ECM can only rely on the manpower hand assembled when being assembled to circuit board, be accompanied by the development in consumer electronics product markets such as mobile phone, PDA, MP3 player and digital camera, ECM loses the upper hand in the consumer electronics product field of these production in enormous quantities just gradually.
MEMS is a new technology of high speed development in recent years, and it adopts advanced semiconductor fabrication process, can realize the batch manufacturing of MEMS device.Compare with the respective devices that adopts conventional art to make, the MEMS device is in high temperature resistant, volume, power consumption, weight and obvious advantages is arranged in price.And utilize the capacitance type minitype silicon microphone of MEMS technology manufacturing owing to can tolerate high temperature in the surface mount, and becoming the substitute of ECM product just rapidly, the occupation rate of market of capacitance type minitype silicon microphone had suitable high growth in recent years.
Utilize capacitance type micro-silicon microphone and important difference of traditional E CM of the processing of MEMS technology to be that bias voltage applies mode.ECM setovers to it by the resident electric charge that is stored in the microphone sensitive diaphragm, and the capacitance type micro-silicon microphone is directly to provide bias voltage to microphone by external power, need not in sensitive membrane, store resident electric charge, so danger that not resident electric charge at high temperature runs off, therefore the capacitance type micro-silicon microphone can bear the high temperature of required experience in the attachment process of automation surface, thereby can adopt automation surface attachment process, manpower is manual to be installed and need not adopt.
At present, MEMS device and integrated circuit (IC) generally adopt the multi-disc integration mode integrated, promptly come independently to finish respectively the making of circuit and MEMS device, and then both hybrid package are integrated into a functional unit by different vendor's different technological process of employing.The benefit of this method is that the manufacturing process difficulty is little, and the design of MEMS device and manufacturing can be optimized separately.This kind method all has application in multiple MEMS device is integrated, resistance pressure type transducer etc. for example, the shortcoming of this kind method be between MEMS device and the integrated circuit to be electrically connected path long and be subject to the interference signal influence.
For some application that is subject to disturb, as the transducer of types such as the piezoelectric type of high output impedance and condenser type, MEMS device and IC carry out that monolithic is integrated then more to have superiority, and can effectively improve the device overall performance and reduce the influence of interference noise.The characteristics of capacitance type micro-silicon microphone high output impedance, cause it to be subjected to the influence of environmental interference noise and parasitic capacitance bigger, therefore little silicon microphone adopts the monolithic integration mode and can improve a lot at aspects such as device overall performance, size, power consumptions with respect to adopting the multi-disc integrated form.
Realize that MEMS device and the single chip integrated manufacture method of IC have three kinds: the first, finish the making of MEMS device earlier, and then on same substrate, finish the making of IC; The second, MEMS device and IC single-step process in manufacturing process is intersected mutually and is carried out; The third method i.e. " back semiconductor technology ", finishes the IC of standard earlier, and then finish the making of MEMS device on same substrate.Wherein, the shortcoming of first kind and second kind way is to introduce pollution, causes IC to lose efficacy, and might cause equipment pollution.The benefit of the third integrated way is to avoid preceding two kinds of pollutions that integrated approach may cause, and can make full use of existing ripe IC standard manufacturing process, helps to improve rate of finished products and reduces investment to equipment; The shortcoming of the third integrated way is after IC finishes, and for not influencing the IC performance, in the MEMS device manufacturing processes high-temperature technology can not arranged thereafter.Because after the IC manufacturing process is finished, can not bear high temperature more than 400 ℃ as the metals such as aluminium of metal electrode, high temperature also may cause the circuit devcie performance to change in addition.Existing the third integrated approach realizes on common silicon chip that all this method need use polysilicon, metal or composite membrane as vibrating membrane, faces the difficult problem of a Stress Control so at present, and technology is also comparatively complicated simultaneously.
Therefore, how to solve that shortcoming that prior art exists is real to have become the technical task that those skilled in the art need to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of need not experience high temperature and need not adopt again composite membrane as diaphragm based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone.
Another object of the present invention is to have highly sensitive based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone.
In order to achieve the above object, provided by the invention based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, comprise step: 1) a SOI substrate is provided, and surface thereof has the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone; Device layer on described second area is as a utmost point of electric capacity; 2) generate integrated circuit being on the device layer of described first area; 3) adopt the low temperature process that is lower than 400 ℃ to generate sacrifice layer being on the device layer of described second area; 4) adopt low temperature process on described sacrifice layer, to form conducting film; 5) carry out photoetching and etching process to form gas port at described conducting film; 6) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described SOI substrate to form; 7) corrosive liquid enters with partial corrosion behind the described sacrifice layer from described gas port and forms by the capacitance sensor of described conducting film as another utmost point of electric capacity.
Can adopt dry etching (for example deep trouth reflection ion etching method) to form described back of the body chamber, also can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching to form described back of the body chamber with potassium hydroxide and Tetramethylammonium hydroxide.
The described sacrifice layer left part in back that partly is corroded can be in the edge of described conducting film, for example discontinuously arranged at the multiple spot at described conducting film edge or a bit.
The material of described sacrifice layer can be silica, metal, photoresist or polyimides organic substance, when sacrificial layer material is silica, amorphous silicon, photoresist or polyimide material, can adopt the described sacrifice layer of dry etching, when sacrificial layer material is metal or photoresist material, can adopt the described sacrifice layer of wet etching.
Described conductive layer can be the composite bed that adopts physical vapor deposition process, chemical plating or the formed metal level of electroplating technology and dielectric layer material to form.
Of the present invention based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, comprising: a surface has and is used to the SOI substrate making the first area of integrated circuit and be used to make the second area of capacitance type micro-silicon microphone; Be grown in the integrated circuit district of the integrated circuit on the device layer that is positioned on the first area; And comprise and be grown in the articulamentum on the device layer that is positioned on the described second area and be grown on the described articulamentum and the back of the body chamber that forms of being corroded as the conductive layer of another utmost point of electric capacity, on another surface of described SOI substrate, and the capacitance type micro-silicon microphone area of a plurality of gas ports of forming at described conductive layer.
Can adopt dry etching (for example deep trouth reflection ion etching method) to form described back of the body chamber, also can adopt anisotropic etchant (being corrosive liquid for example) to carry out wet etching to form described back of the body chamber with potassium hydroxide and Tetramethylammonium hydroxide.
The material of described articulamentum is silica, metal, photoresist or polyimides organic substance, and it can be in the whole edges of described conducting film continuously, also can disperse to be in one or more of described conducting film edge.
Described conductive layer can be the composite bed that adopts physical vapor deposition process, chemical plating or the formed metal level of electroplating technology and dielectric layer material to form.
In sum, integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone and the monolithic integrated chip of formation based on soi wafer of the present invention proposed " the back semiconductor technology " of a cover based on soi wafer, this technology integrates integrated circuit (IC)-components and capacitance type micro-silicon microphone, and the device layer that adopts soi wafer is made the vibrating membrane of capacitance type micro-silicon microphone, can reduce chip size, reduce manufacturing cost, simultaneously can avoid adopting high-temperature technology to reduce diaphragm stress, also can avoid the complicated and repeated not good complex vibration mould mode of adopting process to reduce stress.
Description of drawings
Fig. 1 to Fig. 5 be of the present invention based on soi wafer integrated circuit and the steps flow chart schematic diagram of the method for integrating monolithic of capacitance type micro-silicon microphone.
Fig. 6 be of the present invention based on soi wafer integrated circuit and the three-dimensional profile perspective of the monolithic integrated chip of capacitance type micro-silicon microphone.
Embodiment
See also Fig. 1 to Fig. 6, of the present invention is that " a back semiconductor technology " of overlapping based on soi wafer is used to realize the method for integrating monolithic of integrated circuit (IC)-components with the MEMS device based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, described method must not change standard semiconductor technology, only need to proceed the manufacturing of MEMS device on the circuit soi wafer of standard semiconductor technology finishing, in the present embodiment, be that example is elaborated with integrated circuit and capacitance type micro-silicon microphone.
Described based on soi wafer integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone its mainly may further comprise the steps:
The first step: a SOI substrate 20 is provided, and surface thereof has and is used to make the first area 22 of integrated circuit and what be used to make the capacitance type micro-silicon microphone is the second area 21 of little silicon microphone, is positioned at device layer 41 on the second area 21 as the utmost point of electric capacity.
Second step: on the device layer of described first area 22, generate the integrated circuit (for example field-effect transistor, resistance capacitance etc.) that cooperates with little silicon microphone.For simplicity's sake, described integrated circuit is that example describes with MOS (metal-oxide-semiconductor) memory (MOSFET) only, promptly on the device layer of described first area 22, form field oxide 25a, gate oxide 25b, source leakage doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and the passivation layer 27 etc. of MOSFET device respectively, after described integrated circuit is finished, expose the part of devices layer region 50 that is positioned on the second area 21 by standard semiconductor technology.
The 3rd step: on the part of devices layer region 50 of described second area 21, adopt the low temperature process that is lower than 400 ℃ to generate sacrificial layer material, and then can obtain the sacrifice layer 51 of figure by technologies such as photoetching, corrosion, described sacrifice layer 51 materials can be organic substances such as silica, metal, photoresist or polyimides.
The 4th step: adopting low temperature process to form conducting film on described sacrifice layer 51 is back pole plate, for example can adopt the way of physical vapor deposition (PVD) technology (as sputter, evaporation), chemical plating or plating to form metal level earlier, and then to form described conducting film in conjunction with the dielectric layer material that low temperature generates be composite bed 30, carry out the composite bed 30 that photoetching and etching process can obtain figure at composite bed 30, as the back pole plate of little silicon microphone.
The 5th step: at described conducting film is that composite bed 30 carries out photoetching and etching process to form a plurality of gas ports 31.
The 6th step: carry out photoetching and corrode carrying on the back chamber 33 with respect to second area 21 places to form on described SOI substrate 20 another surfaces, can adopt anisotropic etchant to carry out wet etching (for example with potassium hydroxide KOH, Tetramethylammonium hydroxide TMAH etc. are as corrosive liquid) or dry etching (for example deep trouth reflection ion etching DRIE) and can form described back of the body chamber 33 to oxide layer 40.
The 7th step: corrosive liquid enters with the described sacrifice layer of partial corrosion 51 backs from a plurality of gas ports 31 and forms by the capacitance type micro-silicon microphone of described composite bed 30 as another utmost point of electric capacity, usually when being metal or photoresist material, sacrifice layer 51 materials can adopt wet etching, when sacrifice layer 51 materials are silica, amorphous silicon, photoresist, and polyimide material in a kind of the time can adopt dry etching, be noted that, left part 51a can be in the edge of described composite bed 30 after described sacrifice layer 51 parts were corroded, it can discontinuously be distributed in described composite bed 30 edges one or more, also but continuous distribution is at whole edges of described composite bed 30, and the sacrifice layer that is corroded part is then in described back pole plate and the intermembranous formation of described sound sensitive space 32.
Be noted that, of the present invention is not to exceed with above-mentioned sequence of steps based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, those skilled in the art can be according to actual conditions set-up procedure order, for example can carry out the corrosion of sacrifice layer earlier and finish the step that generates back of the body chamber again, in addition, also can method of the present invention be merged in the making flow process of capacitance type micro-silicon microphone according to the making flow process of other capacitance type micro-silicon microphone.
Of the present inventionly mainly comprise: SOI substrate 20, integrated circuit district, and capacitance type micro-silicon microphone area based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, in the present embodiment, the monolithic integrated chip that forms with integrated circuit and little silicon microphone is that example is elaborated.
Described SOI substrate 20 surface thereof have the second area 21 that is used to make the first area 22 of integrated circuit and is used to make the capacitance type micro-silicon microphone.
Be in the utmost point that device layer 41 on the described second area 21 is used as electric capacity promptly as the sound sensitive film of little silicon microphone.
Described integrated circuit district is grown in the integrated circuit on the device layer that is positioned on the first area 22, with the integrated circuit is that MOS (metal-oxide-semiconductor) memory (MOSFET) describes for example, promptly on the device layer 41 of described first area 22, form field oxide 25a, gate oxide 25b, source leakage doped region 23, grid conductive layer 24, dielectric insulation layer 25c, metal conducting layer 26 and the passivation layer 27 etc. of MOSFET device respectively, after described integrated circuit is finished, expose the part of devices layer region 50 that is positioned on the second area 21 by standard semiconductor technology.
Described capacitance type micro-silicon microphone area comprises the articulamentum that is grown on the device layer 41 that is positioned on the described second area 21, and be grown on the described articulamentum and as the conductive layer of another utmost point of electric capacity, wherein, described articulamentum is part 51a left after sacrifice layer 51 is corroded, its material can be silica, metal, photoresist or polyimides organic substance, described articulamentum can be in the whole edges of described conducting film continuously, also can disperse to be in one or more of described conducting film edge, when the described device layer 41 that is on the described second area is back pole plate for sound sensitive film and described conductive layer, described capacitance type micro-silicon microphone area also is included in the back of the body chamber 33 that described SOI substrate 20 another surfaces are corroded and form, reach a plurality of gas ports 31 that form at described conductive layer, described back of the body chamber 33 can be adopted anisotropic etchant to carry out wet etching (being corrosive liquid with potassium hydroxide and Tetramethylammonium hydroxide for example) and be formed, and also can adopt dry etching (for example adopting deep trouth reflection ion etching) to form.Described conductive layer can be the employing physical vapor deposition process, the composite bed 30 that chemical plating or metal level that electroplating technology forms and dielectric layer material form, simultaneously because articulamentum only is positioned at the edge of described back pole plate, therefore between described back pole plate and described sound sensitive film, has space 32, gas port 31 on sound process back pole plate 30, when passing air gap 32 arrival sound sensitive films, can cause that the sound sensitive film produces deformation, and then cause capacitance variations, because the sound sensitive film is formed by the device layer that does not almost have residual stress, the signal of little silicon microphone links to each other with integrated circuit by electric conducting material 34, and described integrated circuit changes the deformation signal of electric capacity into voltage signal, and also finally being transferred to the next stage circuit carries out respective handling.
In sum, of the present invention based on soi wafer integrated circuit and the method for integrating monolithic of capacitance type micro-silicon microphone can on soi wafer, realize experiencing high temperature and need not adopt composite membrane integrated as the monolithic of sound sensitive film, articulamentum is in the edge of sound sensitive film simultaneously, with respect to around for the sound sensitive film that is completely fixed, it has higher sensitivity, in addition, almost there is not the soi wafer device layer of stress to be used as the sound sensitive film because of adopting, so promptly can avoid adopting high-temperature technology to reduce diaphragm stress, also can avoid the complicated and repeated not good complex vibration mould mode of adopting process to reduce stress, can also reduce the size of chip, reduce manufacturing cost.
Claims (23)
1. one kind based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that comprising step:
1) provide a SOI substrate, surface thereof has the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone;
2) generate integrated circuit being on the device layer of described first area;
3) adopt the low temperature process that is lower than 400 ℃ to generate sacrifice layer being on the device layer of described second area;
4) adopt low temperature process on described sacrifice layer, to form conducting film;
5) carry out photoetching and etching process to form gas port at described conducting film;
6) carry out photoetching and corrode carrying on the back the chamber with respect to the second area place on another surface of described SOI substrate to form;
7) corrosive liquid enters with partial corrosion behind the described sacrifice layer from described gas port and forms by described conducting film as the little silicon microphone of the electric capacity of another utmost point of electric capacity.
2. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt dry etching to form described back of the body chamber.
3. as claimed in claim 2 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt deep trouth reflection ion etching to form described back of the body chamber.
4. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: adopt anisotropic etchant to carry out wet etching to form described back of the body chamber.
5. as claimed in claim 4 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: described anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
6. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: left part was in the edge of described conducting film after described sacrifice layer partly was corroded.
7. as claimed in claim 6 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: the described sacrifice layer left discontinuously arranged multiple spot of part in back that partly is corroded at described conducting film edge.
8. as claimed in claim 6 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: described sacrifice layer partly be corroded the left part in back be in described conducting film the edge a bit.
9. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: the material of described sacrifice layer is a kind of in silica, metal, photoresist and the polyimides organic substance.
10. as claimed in claim 9 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: when sacrificial layer material is metal or photoresist material, adopt the described sacrifice layer of wet etching.
11. as claimed in claim 9 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: when sacrificial layer material be silica, amorphous silicon, photoresist, and polyimide material in a kind of the time adopt the described sacrifice layer of dry etching.
12. as claimed in claim 1 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: described conductive layer is the composite bed that metal level and dielectric layer material form.
13. as claimed in claim 12 based on the integrated circuit of soi wafer and the method for integrating monolithic of capacitance type micro-silicon microphone, it is characterized in that: described metal level adopts any one technology in physical vapor deposition process, chemical plating and the plating to form.
14. one kind based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that comprising:
SOI substrate, surface thereof have the second area that is used to make the first area of integrated circuit and is used to make the capacitance type micro-silicon microphone;
The integrated circuit district comprises the integrated circuit that is grown on the device layer that is positioned at the first area;
The capacitance type micro-silicon microphone area comprises being grown in the articulamentum on the device layer that is positioned at described second area and being grown on the described articulamentum and the back of the body chamber that forms of being corroded as the conductive layer of another utmost point of electric capacity, on another surface of described SOI substrate, and a plurality of gas ports of forming at described conductive layer.
15. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt anisotropic etchant to carry out wet etching to form described back of the body chamber.
16. as claimed in claim 15 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: described anisotropic etchant is a kind of in potassium hydroxide and the tetramethyl ammonium hydroxide solution.
17. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt dry etching to form described back of the body chamber.
18. as claimed in claim 17 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: adopt deep trouth reflection ion etching to form described back of the body chamber.
19. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: described articulamentum is in the whole edges of described conducting film continuously.
20. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: described articulamentum dispersion is in one or more of described conducting film edge.
21. as claimed in claim 14 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: the material of described articulamentum is a kind of in silica, metal, photoresist and the polyimides organic substance.
22. as claimed in claim 14 based on the integrated circuit of S0I silicon chip and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: described conductive layer is the composite bed that metal level and dielectric layer material form.
23. as claimed in claim 22 based on the integrated circuit of soi wafer and the monolithic integrated chip of capacitance type micro-silicon microphone, it is characterized in that: described metal level is by adopting any one technology in physical vapor deposition process, chemical plating and the plating to be formed.
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| CN2007100443230A CN101355828B (en) | 2007-07-27 | 2007-07-27 | Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102625224A (en) * | 2012-03-31 | 2012-08-01 | 歌尔声学股份有限公司 | Chip and method for integrating capacitance silicon microphone and integrated circuit chip |
| CN102740207A (en) * | 2012-06-15 | 2012-10-17 | 歌尔声学股份有限公司 | Chip integrating silicon micro microphone and complementary metal oxide semiconductor (CMOS) integrated circuit and manufacturing method of chip |
| CN103369450A (en) * | 2013-06-25 | 2013-10-23 | 歌尔声学股份有限公司 | Manufacturing method of waterproof thin sheet used in microphone |
| CN105191350A (en) * | 2013-03-13 | 2015-12-23 | 欧姆龙株式会社 | Capacitance type sensor, acoustic sensor, and microphone |
| CN105246013A (en) * | 2014-07-11 | 2016-01-13 | 晶镁电子股份有限公司 | Microphone device |
| CN113346864A (en) * | 2021-05-28 | 2021-09-03 | 杭州星阖科技有限公司 | Bulk acoustic wave resonator and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1159950C (en) * | 2001-12-07 | 2004-07-28 | 清华大学 | Monolithic integrated capacitor type silicon base micro microphone and its producing process |
| CN100536608C (en) * | 2004-04-14 | 2009-09-02 | 北京大学 | Microsilicon microphone and its preparing method |
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- 2007-07-27 CN CN2007100443230A patent/CN101355828B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102625224A (en) * | 2012-03-31 | 2012-08-01 | 歌尔声学股份有限公司 | Chip and method for integrating capacitance silicon microphone and integrated circuit chip |
| CN102625224B (en) * | 2012-03-31 | 2015-07-01 | 歌尔声学股份有限公司 | Chip and method for integrating capacitance silicon microphone and integrated circuit chip |
| CN102740207A (en) * | 2012-06-15 | 2012-10-17 | 歌尔声学股份有限公司 | Chip integrating silicon micro microphone and complementary metal oxide semiconductor (CMOS) integrated circuit and manufacturing method of chip |
| CN105191350A (en) * | 2013-03-13 | 2015-12-23 | 欧姆龙株式会社 | Capacitance type sensor, acoustic sensor, and microphone |
| CN105191350B (en) * | 2013-03-13 | 2018-04-03 | 欧姆龙株式会社 | Electrostatic capacity sensor, sound transducer and microphone |
| CN103369450A (en) * | 2013-06-25 | 2013-10-23 | 歌尔声学股份有限公司 | Manufacturing method of waterproof thin sheet used in microphone |
| CN105246013A (en) * | 2014-07-11 | 2016-01-13 | 晶镁电子股份有限公司 | Microphone device |
| CN113346864A (en) * | 2021-05-28 | 2021-09-03 | 杭州星阖科技有限公司 | Bulk acoustic wave resonator and manufacturing method thereof |
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| CN101355828B (en) | 2012-05-02 |
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