CN100536608C - Microsilicon microphone and its preparing method - Google Patents
Microsilicon microphone and its preparing method Download PDFInfo
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- CN100536608C CN100536608C CNB2004100336381A CN200410033638A CN100536608C CN 100536608 C CN100536608 C CN 100536608C CN B2004100336381 A CNB2004100336381 A CN B2004100336381A CN 200410033638 A CN200410033638 A CN 200410033638A CN 100536608 C CN100536608 C CN 100536608C
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- silicon
- polysilicon membrane
- monocrystalline silicon
- microphone
- reinforcing rib
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Abstract
This invention provides a micro-silicon microphone and its preparation method, in which, said microphone includes a monocrystal silicon film and polysilicon film as the capacitor pole plates, the polysilicon film is a movable pole plate, several release holes are set on the monosilicon film and rib reinforcement structures are formed on the polysilicon film, the rib reinforcement structure is corresponding to the release hole on the monocrystal silicon film and inlayed in the release holes. The preparation method utilizes ICP technology to carry out deep bar etching to either get the release holes or realize polysilicon films with the rib reinforcement structure.
Description
Affiliated technical field
The invention belongs to microelectromechanical systems (MEMS) field, be specifically related to a kind of little silicon microphone and preparation method thereof based on silicon technology.
Background technology
For field of acoustics, microphone device consistency that many traditional process technologies are made and poor stability, reliability are low, have limited the application of microphone aspect high-fidelity and speech recognition.Silicon MEMS process technology is a kind of new manufacturing process, and its processing method and ability await constantly to be invented, innovate and be practical.Little silicon microphone is an Electret Condencer Microphone, have characteristics such as noise is little, distortion is little, sensitivity height, its structure is: adopt the pole plate of the monocrystalline silicon membrane of expansion boron as electric capacity, the polysilicon membrane of the another one pole plate of electric capacity for mixing, the monocrystalline silicon pole plate is provided with several release aperture, when air passes through release aperture, causes the polysilicon membrane vibration, and then the electric capacity between two pole plates changes, and obtains the information of air vibration by changes in capacitance.The polysilicon film surface smoothing of present little silicon microphone in use easily adheres to, and the problem of wave distortion occurs.The release aperture processing technology of this microphone also need be carried out dense boron diffusion earlier and be formed after stopping layer, at EPW solution (ethylenediamine NH
2(CH
2)
2NH
2, catechol C
6H
4(OH)
2, water H
2O) corrode in and could form because long dense boron diffusion meeting produces bigger stress on silicon chip, this microphone also exist structural stress greatly, poor stability, defect of high cost.
Summary of the invention
The present invention has overcome the defective of above-mentioned little silicon microphone structure and processing technology, a kind of little silicon microphone and preparation method thereof is provided, can avoid the wave distortion problem that occurs in flat membrane structure effectively, the microphone structure stress of preparation is little, good stability and reliability height.
Technology contents of the present invention: a kind of little silicon microphone, comprise monocrystalline silicon membrane and polysilicon membrane as capacitor plate, leave the space between two films, but polysilicon membrane is a movable plate electrode, monocrystalline silicon thin film is provided with several release aperture, between monocrystalline silicon membrane and polysilicon membrane, also be provided with insulating barrier, establish etch resistant layer on the insulating barrier, make etch resistant layer between insulating barrier and polysilicon membrane, on polysilicon membrane, form reinforcing rib structure, this structure is corresponding with the release aperture on the monocrystalline silicon thin film, and reinforcing rib structure is embedded in the release aperture.
The arrangement mode of described reinforcing rib structure can be waling and is staggered with horizontal reinforcement.
Described reinforcing rib structure can be distributed in the middle part of polysilicon membrane, and the edge that is positioned at polysilicon membrane does not have reinforcing rib structure.
Etch resistant layer can be described insulating barrier by first deposition silicon nitride film, again the deposition silicon dioxide film resilient coating, then deposit again one deck silicon nitride film make.
A kind of method for preparing little silicon microphone comprises:
(1) preparation of monocrystalline silicon pole plate;
(2) make insulating barrier and etch resistant layer with deposition process;
(3) utilize ICP that the monocrystalline silicon pole plate is carried out deep etching;
(4) make sacrifice layer with deposition process again, the groove on the partially filled monocrystalline silicon pole plate of sacrifice layer;
(5) carry out the polysilicon membrane deposit, the polysilicon of deposit is filled groove with full back and is formed reinforcing rib structure;
(6) preparation in monocrystalline silicon pole plate back of the body chamber, the groove on the monocrystalline silicon pole plate communicates with back of the body chamber, forms release aperture;
(7) method with sputter makes electrode;
(8) erode sacrifice layer, but obtain discharging as the polysilicon membrane of movable plate electrode;
(9) scribing obtains finished product.
Technique effect of the present invention: the present invention utilizes the ICP technology that the monocrystalline silicon pole plate is carried out deep etching, when ensuing sacrifice layer deposit and polysilicon membrane deposit, by filling the groove on the monocrystalline silicon pole plate, on polysilicon membrane, can form reinforcing rib structure, and this groove is by the preparation and the corrosion sacrifice layer formation release aperture in monocrystalline silicon pole plate back of the body chamber.Shape has reinforcement on polysilicon membrane, can strengthen the intensity of polysilicon membrane, avoid the wave distortion problem that in flat membrane structure, occurs, technological process of the present invention is simple, process compatible is good, the uneconomical step of processing technology is no longer necessary before making, all is beneficial to silicon MEMS technology commonly used at present, and prepared microphone cost is low, structural stress is little, good stability and reliability height.
Description of drawings
The thermal oxidation of Fig. 1 monocrystalline silicon pole plate, photoetching for the first time;
Fig. 2 silica erosion, boron diffusion;
Fig. 3 mask is removed;
Fig. 4 deposit supports insulative layer;
Fig. 5 photoetching, corrosion supports insulative layer;
The deposit of Fig. 6 etch resistant layer, photoetching, etching;
The photoetching of Fig. 7 release aperture, etching;
The deposit of Fig. 8 sacrifice layer, photoetching, etching;
The deposit of Fig. 9 structure sheaf, photoetching, etching;
Figure 10 carries on the back chamber figure photoetching, corrosion;
Figure 11 sacrifice layer corrosion, releasing structure;
Figure 12 is the polysilicon membrane of no reinforcement;
Figure 13 is the polysilicon membrane that has reinforcement.
1, silicon chip, 2, the boron diffusion district, 3, silicon dioxide supports insulative layer, 4, the silicon nitride etch resistant layer, 5, sacrifice layer (PSG), 6, the polysilicon structure layer, 7, reinforcement, 8, release aperture.
Embodiment
With reference to figure 1-Figure 11, the technology Integrated Solution of making little silicon microphone is as follows:
One, the preparation of expanding the monocrystalline silicon pole plate of boron:
1, the required mask material silicon dioxide of boron is expanded in heat growth, and 2, photoetching, 3, erode part silicon dioxide, obtain the silicon dioxide figure, 4, the short time expands the figure that boron obtains the monocrystalline silicon pole plate, 5, erode silicon dioxide as mask.
Two, the making of silicon dioxide insulating layer material:
1, the method with deposit obtains silicon dioxide insulating layer, and 2, photoetching, 3, erode part silicon dioxide, obtain the figure of insulating barrier.
Three, the etch resistant layer material:
1, first deposit silicon nitride, silicon oxide deposition again, then deposit silicon nitride, thus obtain the multilayer silicon nitride etch resistant layer, 2, photoetching, 3, etch away the figure that the part silicon nitride obtains etch resistant layer.
Four, utilize ICP that the monocrystalline silicon pole plate is carried out deep etching:
ICP is the abbreviation of Inductively Coupled Plasma inductively coupled plasma, and this technology is to apply highfield and magnetic field in reacting gas, and then produces high-density plasma, this plasma energy and pasc reaction, thus realization is to the deep etching of silicon;
1, photoetching, 2, with ICP technology etching release aperture, release aperture length is 30 microns, and wide is 10 microns, is 20 microns deeply, and arrangement mode is vertical release aperture and horizontal release aperture is staggered, and each release aperture spacing is 10 microns.
Five, the preparation of sacrificial layer material:
1, the method with deposit obtains sacrifice layer (PSG, phosphorosilicate glass), and 2, photoetching, 3, etch away the figure that part PSG obtains sacrifice layer; In the time of the deposit sacrifice layer, the groove on the monocrystalline silicon pole plate is also partially filled, forms the identical similar groove of the degree of depth.
Six, the preparation of polysilicon pole plate:
1, the method with deposit obtains polysilicon layer, and 2, mix, 3, annealing, 4, photoetching, 5, etch away the figure that the part polysilicon obtains the polysilicon pole plate, the polysilicon of deposit is filled the groove on the sacrifice layer, forms reinforcing rib structure.
Seven, the preparation in back of the body chamber:
1, photoetching, 2, corrosion obtains carrying on the back the chamber, the groove on the monocrystalline silicon pole plate is communicated with the formation release aperture with back of the body chamber.
Eight, the preparation of electrode
1, sputter, 2 photoetching, 3 erode the figure that part metals obtains electrode.
Nine, erode sacrifice layer (PSG), structure obtains discharging:
Sacrifice layer corrosion falls back polysilicon pole plate and is released, but becomes movable plate electrode.
Ten, scribing obtains finished product.
With reference to Figure 12, the polysilicon film surface smoothing of former little silicon microphone.With reference to Figure 13, have reinforcing rib structure on the polysilicon membrane of the present invention, increased the rigidity of film, have less stress.Reinforcement on the polysilicon membrane is corresponding with release aperture, and reinforcement length is 22 microns, and wide is 2 microns, and height is 20 microns, and arrangement mode is also corresponding with release aperture, and for waling and horizontal reinforcement are staggered, the spacing of two reinforcements is 18 microns.In order to have elasticity preferably, reinforcement is distributed in the middle part of monocrystalline silicon thin film, promptly in the scope at 20 microns at polysilicon membrane edge, do not establish reinforcing rib structure.
Claims (6)
1. little silicon microphone, comprise monocrystalline silicon thin film and polysilicon membrane as capacitor plate, leave the space between two films, but polysilicon membrane is a movable plate electrode, monocrystalline silicon thin film is provided with several release aperture, between monocrystalline silicon thin film and polysilicon membrane, also be provided with insulating barrier, establish etch resistant layer on the insulating barrier, make etch resistant layer between insulating barrier and polysilicon membrane, it is characterized in that: on polysilicon membrane, form reinforcing rib structure, this reinforcing rib structure is corresponding with the release aperture on the monocrystalline silicon thin film, and reinforcing rib structure is embedded in the release aperture.
2. little silicon microphone as claimed in claim 1 is characterized in that: the arrangement mode of described reinforcing rib structure is that waling is staggered with horizontal reinforcement.
3. little silicon microphone as claimed in claim 1 or 2 is characterized in that: described reinforcing rib structure is distributed in the middle part of polysilicon membrane, and the edge that is positioned at polysilicon membrane does not have reinforcing rib structure.
4. little silicon microphone as claimed in claim 1 is characterized in that: described etch resistant layer for described insulating barrier by first deposition silicon nitride film, again the deposition silicon dioxide film resilient coating, then deposit one deck silicon nitride film makes.
5. method for preparing little silicon microphone comprises:
(1) preparation of monocrystalline silicon pole plate;
(2) make insulating barrier and etch resistant layer with deposition process;
(3) utilize ICP that the monocrystalline silicon pole plate is carried out deep etching;
(4) make sacrifice layer with deposition process again, the groove on the partially filled monocrystalline silicon pole plate of sacrifice layer;
(5) carry out the polysilicon membrane deposit, the polysilicon of deposit is filled groove with full back and is formed reinforcing rib structure;
(6) preparation in monocrystalline silicon pole plate back of the body chamber, the groove on the monocrystalline silicon pole plate communicates with back of the body chamber, forms release aperture;
(7) method with sputter makes electrode;
(8) erode sacrifice layer, but obtain discharging as the polysilicon membrane of movable plate electrode;
(9) scribing obtains finished product.
6. the method for the little silicon microphone of preparation as claimed in claim 5 is characterized in that: being prepared as of etch resistant layer: first deposit silicon nitride, silicon oxide deposition, then deposit silicon nitride again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100336381A CN100536608C (en) | 2004-04-14 | 2004-04-14 | Microsilicon microphone and its preparing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100336381A CN100536608C (en) | 2004-04-14 | 2004-04-14 | Microsilicon microphone and its preparing method |
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| CN1684546A CN1684546A (en) | 2005-10-19 |
| CN100536608C true CN100536608C (en) | 2009-09-02 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960580B (en) * | 2005-11-03 | 2011-06-29 | 歌尔声学股份有限公司 | Encapsulation for silicon microphone suitable to mass-production |
| CN1980492B (en) * | 2005-12-07 | 2011-05-11 | 歌尔声学股份有限公司 | Silicon microphone package |
| CN101355827B (en) * | 2007-07-27 | 2012-01-04 | 苏州敏芯微电子技术有限公司 | Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip |
| CN101355828B (en) * | 2007-07-27 | 2012-05-02 | 苏州敏芯微电子技术有限公司 | Monolithic integration method for integrated circuit based on SOI silicon chip and capacitance type micro-silicon microphone, and chip |
| CN102320549B (en) * | 2011-07-28 | 2014-05-28 | 北京大学 | Method for improving stress linearity of film |
| CN103369450A (en) * | 2013-06-25 | 2013-10-23 | 歌尔声学股份有限公司 | Manufacturing method of waterproof thin sheet used in microphone |
| CN103686570B (en) * | 2013-12-31 | 2017-01-18 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone |
| CN111908420B (en) * | 2019-05-09 | 2024-02-27 | 无锡华润上华科技有限公司 | Method for manufacturing micro-electromechanical system device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352515A (en) * | 2001-12-07 | 2002-06-05 | 清华大学 | Monolithic integrated capacitor type silicon base micro microphone and its producing process |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1352515A (en) * | 2001-12-07 | 2002-06-05 | 清华大学 | Monolithic integrated capacitor type silicon base micro microphone and its producing process |
Non-Patent Citations (6)
| Title |
|---|
| A review of silicon microphones. P.R.Scheeper, A.G.H.van der Donk, W.Olthuis, P.Bergveld.Sencors and Actuators A. 1994 |
| A review of silicon microphones. P.R.Scheeper, A.G.H.van der Donk, W.Olthuis, P.Bergveld.Sencors and Actuators A. 1994 * |
| 多孔硅在电容式微传声器制备中的应用研究. 宁瑾，刘忠立，刘焕章，葛永才.微细加工技术，第1期. 2003 |
| 多孔硅在电容式微传声器制备中的应用研究. 宁瑾，刘忠立，刘焕章，葛永才.微细加工技术，第1期. 2003 * |
| 电容式微传声器的制备研究新进展. 宁瑾，刘忠立，赵慧.电子器件，第25卷第1期. 2002 |
| 电容式微传声器的制备研究新进展. 宁瑾，刘忠立，赵慧.电子器件，第25卷第1期. 2002 * |
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| CN1684546A (en) | 2005-10-19 |
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Granted publication date: 20090902 Termination date: 20120414 |