CN1791281A - Silicon micro condenser microphone chip and its preparing method - Google Patents
Silicon micro condenser microphone chip and its preparing method Download PDFInfo
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- CN1791281A CN1791281A CN 200410098605 CN200410098605A CN1791281A CN 1791281 A CN1791281 A CN 1791281A CN 200410098605 CN200410098605 CN 200410098605 CN 200410098605 A CN200410098605 A CN 200410098605A CN 1791281 A CN1791281 A CN 1791281A
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Abstract
The invention discloses a silicon micro-condenser microphone chip, which comprises a silicon substrate with a perforated back board on top. Wherein, the said back board comprises a continual doping layer on top of said substrate with a plurality of acoustics holes by etching the continual doping layer or also a silicon material layer under the doping layer. This invention overcomes the problem to prepare back board and perforation with deep-selective enriched boron, and provides a simple and practical technique for industrial production.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, the present invention relates to a kind of silicon micro capacitor microphone chip and preparation method thereof.
Background technology
Silicon micro capacitor microphone is a kind of novel microphone, and it is grouped into by the silicon part and the peripheral circuit portion that form silicon micro capacitor usually.Wherein the silicon micro capacitor chip partly is the core of microphone, and it is to utilize modern very lagre scale integrated circuit (VLSIC) technology, and the body etching technics by complexity on silicon chip is made.Silicon micro capacitor chip part by silicon chip and on the perforation backboard acoustic holes backboard, air-gap, separator, vibrating membrane/metal film and metal electrode are formed in other words.Because the complexity of its manufacture craft, along with the development of technology, a lot of new structures and preparation method thereof constantly are suggested.
Known, P.-C.Hsu etc. once proposed to adopt square air gap abroad, the microphone chip structure of separator and vibrating membrane and preparation method (see Micro Electro Mechanical Systems (MEMS), 1998 IEEE11th International Workshop p580-585, by P.-C.Hsu, C.H.Mastrangelo, described in " A HIGH SENSITIVITY POLYSILICON DIAPHRAGM CONDENSERMICROPHONE " literary composition that andK.D.Wise showed), the shortcoming of this silicon micro capacitor microphone chip is to concentrate at the sharp corner generation stress of square vibrating membrane, and then causing the sensitivity decline and even the vibrating membrane of microphone to break, rate of finished products is very low.
The applicant has proposed to overcome square vibrating membrane and has produced stress at sharp corner and concentrate the problem of being brought in application number is 03153254.3 and 03153253.5 Chinese patent application, microphone chip that has annular separator and circular air-gap and preparation method thereof has been proposed, in its preparation process, distinguished and used two kinds of different thin-film materials as annulus separator and circular sacrifice layer.Fig. 1 shows a kind of like this profile of silicon micro capacitor microphone chip 10, includes a silicon chip 11.This silicon chip 11 has a hollow area 12 that is essentially terrace with edge shape, and the upper end of hollow area 12 has a circular perforations backboard 13 that is formed in the silicon chip upper surface.Have a plurality of acoustic holes 14 on this perforation backboard 13, so that form the acoustic holes pattern.Also be formed with an annular separator 15 at silicon chip 11 upper surfaces, and be formed with a Round Membranes 16 on the separator 15.By separator 15, between perforation backboard 13 and vibrating membrane 16, provide circular air-gap 17.Has electrode 19 respectively on perforation backboard 13 and the vibrating membrane 16.In these two applications, annular separator 15 in the microphone chip 10 and circular air-gap 17 can effectively reduce concentrating of stress, thus the decline and the vibrating membrane that have improved microphone chip sensitivity break
More than the preparation of perforation backboard of several known silicon micro capacitor microphone chips all be to carry out the degree of depth (10 to 20 microns) the dense boron diffusion of selectivity at silicon chip (for example silicon chip 11 of Fig. 1) front surface earlier, promptly dense boron diffusion is carried out in the zone outside the acoustic holes of perforation backboard, form a doped layer, this doped layer stops layer certainly as the body etching simultaneously, then, carrying out the body etching again from the rear surface forms.The perforation backboard of Xing Chenging (for example perforation backboard 13 among Fig. 1) only comprises the doped layer layer of material usually like this.The shortcoming of the dense boron diffusion method preparation of this employing depth-selectiveness perforation backboard mainly has shortcoming:
1) the acoustic holes zone is to limit by the dense boron diffusion of selectivity, that is to say, when dense boron diffusion is carried out on the surface of silicon chip, do not mix in the zone that will be configured as acoustic holes, and silicon materials etching that should the zone when the body etching is removed to form acoustic holes.Optionally dense boron diffusion is very difficult on technology, the one, because in the depth direction diffusion, also have horizontal diffusion, the 2nd, the diffusion mask can not stop the diffusion at reserve area sometimes fully, thereby causes the result of the dense boron diffusion of selectivity undesirable, even failure.
2) because the perforation backboard only is made up of the doped layer layer of material,, therefore need carry out the dense boron diffusion of the degree of depth in order to reach the thickness requirement (usually between 12 microns to 20 microns) of perforation backboard.And the dense boron diffusion of degree of depth length consuming time (generally wanting more than 20 hours), and the dense boron diffusion of the degree of depth causes that silicon chip upwarps at the edge, makes the dense boron diffusion of the degree of depth various technologies thereafter make relatively difficulty.Particularly, big silicon chip (as 4 inches or the bigger substrate) influence to production usefulness is bigger.
3) because this anisotropy of silicon in corrosive liquid, the chip transaudient to silicon micro capacitor, back plate thickness requires between 12 microns to 20 microns, so, backboard perforation with the dense boron diffusion preparation of the degree of depth just can not be too little, therefore, the size of silicon micro capacitor microphone chip just can not be too little, and this cost that makes silicon micro capacitor microphone chip when producing in enormous quantities is than higher.
Summary of the invention
One of purpose of the present invention is to overcome the dense boron diffusion of depth-selectiveness and makes the shortcoming and defect that the perforation of silicon micro capacitor microphone chip backboard is brought, thereby a kind of silicon micro capacitor microphone chip and preparation method thereof is provided.
To achieve these goals, the invention provides a kind of silicon micro capacitor microphone chip, comprise silicon chip and on perforation backboard, separator, vibrating membrane and electrode, described separator is between described perforation backboard and described vibrating membrane, in order to the air-gap between described perforation backboard and the described vibrating membrane to be provided, described perforation backboard comprises a doped layer and has the acoustic holes pattern of being made up of a plurality of acoustic holes; Acoustic holes on the described perforation backboard is that etching one continuous doped layer forms.
Described perforation backboard only is made up of doped layer, and described acoustic holes is passed described doped layer; Perhaps, described perforation backboard comprises that also one is positioned at the silicon material layer under the doped layer, and described acoustic holes is passed described doped layer and described silicon material layer.Described separator is an annular.Acoustic holes on the described perforation backboard is to form with the described continuous doped layer of inductively coupled plasma etching.
The preparation method of described silicon micro capacitor microphone chip provided by the invention comprises:
Step 1 a: silicon chip with upper surface and lower surface is provided;
Step 2: the upper surface at described silicon chip forms a continuous doped layer;
Step 3: on the upper surface of described silicon chip, form a separator;
Step 4: etch the acoustic holes pattern of forming by a plurality of acoustic holes downwards from the upper surface of described continuous doped layer:
Step 5: form a sacrifice layer on the upper surface of described silicon chip and in the described acoustic holes;
Step 6: on described sacrifice layer, form a vibrating membrane;
Step 7: from the lower surface of described silicon chip described silicon chip is carried out etching, and etching is removed described sacrifice layer, at least a portion perforation backboard of described doped layer formation silicon micro capacitor microphone chip;
Step 8: on described vibrating membrane and doped layer, form electrode respectively.
In step 7, when the lower surface of described silicon chip carried out etching to described silicon chip, this etching proceeded to described doped layer, makes described perforation backboard only be made up of described doped layer.In step 7, when the lower surface of described silicon chip carried out etching to described silicon chip, this etching also residual was positioned at the silicon material layer of described doped layer below, makes described perforation backboard be made up of described doped layer and described residual silicon material layer.In step 7, utilize time of control etching to control the thickness of described residual silicon material layer.
In step 4, described acoustic holes pattern is to form with the described continuous doped layer of inductively coupled plasma etching.
The present invention has following beneficial effect:
1) the present invention adopts and prepare acoustic holes in advance by etching on continuous doped layer, particularly can select ICP (inductively coupled plasma) etching technics to come the etching doped layer, say in principle, the backboard perforation of this method preparation is little of several micron dimensions, like this, the sound hole dimension of silicon micro capacitor microphone chip will no longer become the factor of restriction silicon micro capacitor microphone chip size.
2) in a kind of preferred implementation of the present invention, the perforation backboard of microphone chip can be compound backboard, comprise that one deck doped layer and one deck do not erode and residual silicon material layer, like this, using when preparing doped layer such as dense boron diffusion, do not need to carry out deep diffusion, thus avoided the dense boron diffusion of depth-selectiveness make the backboard perforation bring the silicon chip edge upwarp with silicon micro capacitor microphone chip can not be too little etc. problem.
In a word, silicon micro capacitor microphone chip provided by the invention and preparation method thereof has overcome problem and difficulty that dense boron diffusion making backboard of depth-selectiveness and backboard perforation are brought, for the suitability for industrialized production microphone chip provides a cover simple and easy to do technology.
Description of drawings
Fig. 1 is the structural representation of a kind of silicon micro capacitor microphone chip of relating in the background technology;
Fig. 2 is the generalized section after the silicon chip upper surface forms doped layer among the embodiment 1;
Fig. 3 is embodiment 1 junction diagram 2 generalized section after forming separator on the silicon chip and etching acoustic holes afterwards;
Fig. 4 is embodiment 1 junction diagram 3 generalized section after forming sacrifice layer and vibrating membrane on the silicon chip afterwards;
Fig. 5 is the generalized section of the final silicon micro capacitor microphone chip that forms after embodiment 1 junction diagram 4 carries out body etching removal sacrifice layer and electrode is set silicon chip afterwards;
Fig. 6 is the vertical view of silicon micro capacitor microphone chip shown in Figure 5;
Fig. 7 is the generalized section after the silicon chip upper surface forms doped layer among the embodiment 2;
Fig. 8 is embodiment 2 junction diagrams 7 generalized sections after forming separator on the silicon chip and etching acoustic holes afterwards;
Fig. 9 is embodiment 2 junction diagrams 8 generalized sections after forming sacrifice layer and vibrating membrane on the silicon chip afterwards;
Figure 10 is the generalized section of the final silicon micro capacitor microphone chip that forms after embodiment 2 junction diagrams 9 carry out body etching removal sacrifice layer and electrode is set silicon chip afterwards.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1:
Fig. 2～Fig. 5 shows the preparation flow of silicon micro capacitor microphone chip of the present invention in one embodiment, wherein the microphone chip for preparing for the method according to this invention of Fig. 5.
As shown in Figure 2, at first choose a silicon chip 100, this silicon chip 100 can be n type or p+ type silicon chip.Silicon chip 100 has a upper surface 101 and a lower surface 102, in one embodiment, the thickness of this silicon chip 100 is 400 microns, but is appreciated that those skilled in the art can select the silicon chip 100 of different-thickness according to needed microphone chip size.Silicon chip 100 is through high temperature oxidation process growth one deck high temperature silica, and exemplarily, the thickness of this high temperature silica is 1 micron; Make mask 103 utilizing hydrofluoric acid corrosion high temperature silica on the upper surface 101 of silicon chip 100 after to this floor height temperature silicon dioxide photoetching.Outside the overlay area of mask 103, mix from 101 pairs of silicon chips 100 of upper surface, to form a continuous doped layer 104.Can adopt dense boron diffusion or phosphorus to inject to the doping of silicon chip 100 here, mixes.From following description as can be known, in the present embodiment, the perforation backboard of microphone chip is only formed by doped layer 104 layer of material, and therefore, the thickness of doped layer 104 is identical with the thickness of needed perforation backboard in the present embodiment.For example, the thickness of microphone chip perforation backboard usually between 12 microns to 20 microns, therefore, in the present embodiment, the thickness of doped layer 104 also can be selected between 12 microns to 20 microns, and those skilled in the art also can make other selection according to actual needs.
As shown in Figure 3, with the high temperature silica mask 103 among hydrofluoric acid removal Fig. 2, the upper surface 101 at silicon chip 100 forms a separator 105 then.In Fig. 6, see clearlyer, this separator 105 is preferably annular, can form by the following method: the upper surface 101 at silicon chip 100 forms one deck low temperature silicon dioxide, then this layer low temperature silicon dioxide is carried out eroding away with hydrofluoric acid after the photoetching separator 105 of annular.Etching acoustic holes 106 on doped layer 105 then, in one embodiment, doped layer 104 region surface that separator 105 is surrounded are carried out whirl coating, make needed acoustic holes pattern by lithography, use inductively coupled plasma (ICP) technology to etch a plurality of acoustic holes 106 of forming the acoustic holes pattern then.These acoustic holes 106 see through the whole thickness of doped layer 104, and it highly is a bit larger tham the thickness of doped layer 104.In addition, acoustic holes 106 can adopt such as shapes known in those skilled in the art such as squares.Like this, comprise that the doped layer 104 by a plurality of acoustic holes 106 has formed the perforation backboard of silicon micro capacitor microphone chip.
From Fig. 2 and Fig. 3 as can be known, than limiting acoustic holes by optionally mixing, in the present invention, the acoustic holes 106 of microphone chip perforation backboard is that etching forms on a continuous doped layer 104.
As shown in Figure 4, after the glue that is got rid of when removing photoetching acoustic holes pattern, around 105 region surrounded of separator, form a sacrifice layer 107.This sacrifice layer 107 is full of the space that separator 105 is centered on, and has been full of each acoustic holes 106 that forms in Fig. 3 simultaneously.In one embodiment, the method of available planar magnetic control sputtering, deposit goes out the sacrifice layer 107 of a zinc oxide material, because during planar magnetic control sputtering, silicon chip 100 is to be immersed in the plasma of glow discharge, so each side deposit simultaneously of the acoustic holes 106 that zinc oxide etches at ICP, acoustic holes 106 is filled very fast oxidized zinc full, the sacrifice layer substantially flat of deposit this moment just has a small pit at the center of acoustic holes 106, this pit is to not influence of device performance.Then, sacrifice layer 107 is carried out going out needed sacrifice layer shape with phosphoric acid corrosion after the photoetching,, sacrifice layer 107 can be carried out after the photoetching going out the circular sacrifice layer 107 concentric with annular separator 105 with phosphoric acid corrosion for example for annular separator 105 among Fig. 4.Then, at upper surface 101 and lower surface 102 two-sided deposit one deck silicon nitrides of silicon chip 100, exemplarily, the thickness of this silicon nitride layer is 1 micron.After upper surface 101 photoetching of silicon chip 100, silicon nitride layer is etched into vibrating membrane 108, after lower surface 102 photoetching, etches body etching diaphragm 109.As shown in Figure 6, for annular separator 105, the shape of vibrating membrane 108 correspondingly is circular.In Fig. 4, the uncovered area of body etching diaphragm 109 is a square, so that begin silicon chip 100 is carried out the body etching from this square area.
As shown in Figure 5, begin silicon chip 100 usefulness potassium hydroxide are carried out silicon body etching from the lower surface 102 of silicon chip 100, when potassium hydroxide erodes to the acoustic holes 106 that the sacrifice layer 107 of zinc oxide material fills, since potassium hydroxide to the corrosion rate of the zinc oxide sacrifice layer 107 in the acoustic holes 106 far above doped layer 104 zones around it, acoustic holes 106 interior sacrifice layers 107 are eroded very soon, thereby expose original acoustic holes 106 that etching forms in Fig. 3.Then, potassium hydroxide further arrives the zinc oxide sacrifice layer 107 that separators 105 are surrounded by acoustic holes 106, and sacrifice layer 107 is all corroded, thereby at the doped layer 104 formation air-gap 110 between backboard and the vibrating membrane 108 of boring a hole in other words.At last, on the surface of vibrating membrane 108 and doped layer 104 metal electrode 111 is set respectively, this sees clearlyer in Fig. 6.These two metal electrodes 111 can be by the upper surface 101 evaporation layer of metal films at silicon chip 100, and for example the aluminium film becomes electrode 111 to this metallic film photoetching and with phosphoric acid corrosion then.
Embodiment 2:
Fig. 7～Figure 10 shows the preparation flow of silicon micro capacitor microphone chip of the present invention in another embodiment, wherein Figure 10 microphone chip of preparing of the method according to this invention in this embodiment.Hereinafter in the description to embodiment 2, the part identical with embodiment 1 no longer narrated, emphasis is described the difference part of embodiment 2 and embodiment 1, wherein, in Fig. 7～Figure 10, still use the label consistent with Fig. 2～Fig. 5 with embodiment 1 identical composition, the part different with embodiment 1 adopts other label.
As shown in Figure 7, the difference of present embodiment and embodiment 1 is that the thickness of doped layer 204 is significantly less than the thickness of doped layer 104 among Fig. 2.Description from behind as can be known, in the present embodiment, the perforation backboard of microphone chip is a lamination layer structure, by doped layer 204 with and under one deck etching after residual silicon material layer form.Therefore, in the present embodiment, guaranteeing that by silicon material layer doped layer 204 can be thinner, can select usually under the situation of perforation back plate thickness between 0.1 micron～3 microns.
As shown in Figure 8, be that with the difference of Fig. 3 acoustic holes 106 sees through the whole thickness of doped layer 204 and continues to extend downwards, the height of acoustic holes 106 thickness with desired perforation backboard basically is identical.Basically the thickness with doped layer 104 is identical.For example, the thickness of microphone chip perforation backboard usually between 12 microns to 20 microns, therefore, in the present embodiment, the height of acoustic holes 106 also can be selected between 12 microns to 20 microns, and those skilled in the art also can make other selection according to actual needs.
As shown in Figure 9, compare with Fig. 4, remove doped layer 204 different with doped layer 104 thickness among Fig. 3 outside, other process is basic identical.
As shown in figure 10, compare with Fig. 5, in the present embodiment, when silicon chip 100 is carried out the body etching, residual by a silicon material layer 212 below doped layer 204, the lamination layer structure that this residual silicon material layer 212 and doped layer 204 forms has been formed the perforation backboard of silicon microphone chip with acoustic holes 106.Wherein, and the thickness of perforation backboard composite bed---specifically the thickness of silicon material layer 212 can decide the time of the body etching of silicon chip 100 by control, because the transaudient chip of silicon micro capacitor is not high to the required precision of the thickness of perforation backboard composite bed, therefore under the existing processes condition, adopting time method control is that those skilled in the art is easy to accomplish.
Claims (10)
1, a kind of silicon micro capacitor microphone chip, comprise silicon chip and on perforation backboard, separator, vibrating membrane and electrode, described separator is between described perforation backboard and described vibrating membrane, in order to the air-gap between described perforation backboard and the described vibrating membrane to be provided, described perforation backboard comprises a doped layer and has the acoustic holes pattern of being made up of a plurality of acoustic holes; It is characterized in that the acoustic holes on the described perforation backboard is that etching one continuous doped layer forms.
2, silicon micro capacitor microphone chip according to claim 1 is characterized in that, described perforation backboard only is made up of doped layer, and described acoustic holes is passed described doped layer.
3, silicon micro capacitor microphone chip according to claim 1 is characterized in that, described perforation backboard comprises that also one is positioned at the silicon material layer under the doped layer, and described acoustic holes is passed described doped layer and described silicon material layer.
4, silicon micro capacitor microphone chip according to claim 1 is characterized in that, described separator is an annular.
5, silicon micro capacitor microphone chip according to claim 1 is characterized in that, the acoustic holes on the described perforation backboard is to form with the described continuous doped layer of inductively coupled plasma etching.
6, the preparation method of the described silicon micro capacitor microphone chip of a kind of claim 1 comprises:
Step 1 a: silicon chip with upper surface and lower surface is provided;
Step 2: the upper surface at described silicon chip forms a continuous doped layer;
Step 3: on the upper surface of described silicon chip, form a separator;
Step 4: etch the acoustic holes pattern of forming by a plurality of acoustic holes downwards from the upper surface of described continuous doped layer;
Step 5: form a sacrifice layer on the upper surface of described silicon chip and in the described acoustic holes;
Step 6: on described sacrifice layer, form a vibrating membrane;
Step 7: from the lower surface of described silicon chip described silicon chip is carried out etching, and etching is removed described sacrifice layer, at least a portion perforation backboard of described doped layer formation silicon micro capacitor microphone chip;
Step 8: on described vibrating membrane and doped layer, form electrode respectively.
7, according to the preparation method of the described silicon micro capacitor microphone chip of claim 6, it is characterized in that, in step 7, when the lower surface of described silicon chip carries out etching to described silicon chip, this etching proceeds to described doped layer, makes described perforation backboard only be made up of described doped layer.
8, according to the preparation method of the described silicon micro capacitor microphone chip of claim 6, it is characterized in that, in step 7, when the lower surface of described silicon chip carries out etching to described silicon chip, this etching also residual one is positioned at the silicon material layer of described doped layer below, makes described perforation backboard be made up of described doped layer and described residual silicon material layer.
9, the preparation method of described silicon micro capacitor microphone chip according to Claim 8 is characterized in that, in step 7, utilizes time of control etching to control the thickness of described residual silicon material layer.
According to the preparation method of the described silicon micro capacitor microphone chip of claim 6, it is characterized in that 10, in step 4, described acoustic holes pattern is to form with the described continuous doped layer of inductively coupled plasma etching.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101835085A (en) * | 2010-05-10 | 2010-09-15 | 瑞声声学科技(深圳)有限公司 | Method for manufacturing silicon-based condenser microphone |
| CN101959118A (en) * | 2010-04-19 | 2011-01-26 | 瑞声声学科技(深圳)有限公司 | Method for producing silicon microphone |
| CN102378092A (en) * | 2010-08-18 | 2012-03-14 | Nxp股份有限公司 | Mems microphone |
| CN101478710B (en) * | 2009-01-17 | 2012-10-17 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN105246012A (en) * | 2014-05-30 | 2016-01-13 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN105530577A (en) * | 2014-10-21 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing sound sensor |
| CN106904566A (en) * | 2015-12-22 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS and preparation method thereof, electronic installation |
| CN108622846A (en) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN111757228A (en) * | 2020-07-06 | 2020-10-09 | 瑞声科技（南京）有限公司 | MEMS microphone |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478710B (en) * | 2009-01-17 | 2012-10-17 | 歌尔声学股份有限公司 | Silicon capacitor microphone |
| CN101959118A (en) * | 2010-04-19 | 2011-01-26 | 瑞声声学科技(深圳)有限公司 | Method for producing silicon microphone |
| CN101835085A (en) * | 2010-05-10 | 2010-09-15 | 瑞声声学科技(深圳)有限公司 | Method for manufacturing silicon-based condenser microphone |
| CN102378092A (en) * | 2010-08-18 | 2012-03-14 | Nxp股份有限公司 | Mems microphone |
| CN102378092B (en) * | 2010-08-18 | 2014-04-16 | Nxp股份有限公司 | Mems microphone |
| US9061889B2 (en) | 2010-08-18 | 2015-06-23 | Nxp, B.V. | MEMS microphone |
| CN105246012A (en) * | 2014-05-30 | 2016-01-13 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN105530577B (en) * | 2014-10-21 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of sound transducer |
| CN105530577A (en) * | 2014-10-21 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Method for preparing sound sensor |
| CN106904566A (en) * | 2015-12-22 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS and preparation method thereof, electronic installation |
| CN106904566B (en) * | 2015-12-22 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
| CN108622846A (en) * | 2017-03-22 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN108622846B (en) * | 2017-03-22 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone and forming method thereof |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN108882132B (en) * | 2017-05-11 | 2021-07-06 | 现代自动车株式会社 | Microphone and method for manufacturing the same |
| CN111757228A (en) * | 2020-07-06 | 2020-10-09 | 瑞声科技（南京）有限公司 | MEMS microphone |
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Open date: 20060621 |