CN105530577A - Method for preparing sound sensor - Google Patents
Method for preparing sound sensor Download PDFInfo
- Publication number
- CN105530577A CN105530577A CN201410563735.5A CN201410563735A CN105530577A CN 105530577 A CN105530577 A CN 105530577A CN 201410563735 A CN201410563735 A CN 201410563735A CN 105530577 A CN105530577 A CN 105530577A
- Authority
- CN
- China
- Prior art keywords
- sacrifice layer
- substrate
- sound transducer
- preparation
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 188
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000011241 protective layer Substances 0.000 claims abstract description 29
- 238000001039 wet etching Methods 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 80
- 238000002360 preparation method Methods 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 15
- 238000004380 ashing Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 150000002843 nonmetals Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 235000012093 Myrtus ugni Nutrition 0.000 description 1
- 244000061461 Tema Species 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a method for preparing a sound sensor. The method comprises the following steps: providing a substrate; sequentially forming a first sacrificial layer, a second sacrificial layer, a vibration electrode, a third sacrificial layer, a fixed electrode film and a protective layer on the substrate; selectively etching the protective layer and the fixed electrode film to form a fixed electrode and a sound hole; selectively etching the substrate to form a substrate opening; removing the first sacrificial layer by adopting a first wet etching process; and removing the second sacrificial layer and the third sacrificial layer by adopting an ashing process to form the sound sensor. The method for preparing the sound sensor disclosed by the invention can be used for avoiding or reducing residual etching liquid in an air cavity, so as to improve the performance of the device.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of preparation method of sound transducer.
Background technology
Microphone has application on various devices, such as mobile phone and integrated circuit (IC) recorder.As the main devices of microphone, the transmission of sound transducer to sound plays vital effect.At present, the method that the air chamber in sound transducer adopts sacrifice layer to discharge usually is prepared, and as shown in Fig. 1-Fig. 9, concrete step comprises:
First, as shown in Figure 1, a substrate 100 is provided;
Then, as shown in Figure 2, described substrate 100 forms one first sacrifice layer 110, and the material of described first sacrifice layer 110 is oxide;
Then, as shown in Figure 3, described first sacrifice layer 110 forms a vibrating electrode 120, and can be formed with crack 121 in described vibrating electrode 120, the signal to noise ratio of sound transducer can be improved in described crack 121.In addition, described first sacrifice layer 110 can also be provided with the supporter supporting described vibrating electrode 120, this is what it will be appreciated by those skilled in the art that, does not specifically illustrate in figure 3;
Subsequently, as shown in Figure 4, described vibrating electrode 120 forms one second sacrifice layer 130, and the material of described second sacrifice layer 130 is oxide;
Then, as shown in Figure 5, described second sacrifice layer 130 forms a fixed electrode film 140;
Afterwards, as shown in Figure 6, described first sacrifice layer 110 and the second sacrifice layer 130 are etched, form the fluting 131 of an annular, described first sacrifice layer 110 is divided into Part I 110a and Part II 110b by described fluting 131, described second sacrifice layer 130 is divided into Part I 130a and Part II 130b by described fluting 131, the Part I 110a of the first sacrifice layer 110 and Part I 130a of the second sacrifice layer 130 forms the sacrifice layer of air chamber, the Part II 110b of the first sacrifice layer 110 and Part II 130b of the second sacrifice layer 130 forms base part 150,
Then, as shown in Figure 7, form a protective layer 160, described protective layer 160 seals described fixed electrode film 140, second sacrifice layer 130 and the first sacrifice layer 110, described protective layer 160 seals described base part 150 simultaneously, and sacrifice layer and the base part 150 of air chamber are isolated by described protective layer 160;
Subsequently, as shown in Figure 8, protective layer 160 described in selective etch and fixed electrode film 140, form a fixed electrode 141 and sound holes 161, the second sacrifice layer 130 described in described sound holes 161 exposed portion; And substrate 100 described in selective etch, form a substrate opening 101, described substrate opening 101 exposes the Part I 110a of at least described first sacrifice layer 110;
Because the material of described first sacrifice layer 110, second sacrifice layer 130 is oxide, so, wet-etching technology is adopted to remove the Part I 110a of described first the sacrifice layer 110 and Part I 130a of the second sacrifice layer 130, as shown in Figure 9, in wet-etching technology, etching liquid flows into from described sound holes 161 and substrate opening 101, and contact described first sacrifice layer 110a and the second sacrifice layer 130a, thus remove described first sacrifice layer 110a and the second sacrifice layer 130a, form air chamber 111, thus form sound transducer 1.
But, due in the prior art, the Part I 110a of described first the sacrifice layer 110 and Part I 130a of the second sacrifice layer 130 is removed by wet-etching technology, etching liquid just can touch described first sacrifice layer 110a and the second sacrifice layer 130a after entering described sound holes 161 and substrate opening 101, after described first sacrifice layer 110a and the second sacrifice layer 130a is removed, partial etching liquid can remain in air chamber 111, thus affects the performance of sound transducer 1.
Summary of the invention
The object of the invention is to, provide a kind of preparation method of sound transducer, can avoid or reduce etching liquid can remain in air chamber, thus improves the performance of device.
For solving the problems of the technologies described above, the invention provides a kind of preparation method of sound transducer, comprising:
One substrate is provided;
Form one first sacrifice layer on the substrate, described first sacrifice layer is the loop configuration with a sacrifice layer opening, and the material of described first sacrifice layer is the material removed by wet etching;
Form one second sacrifice layer, described second sacrifice layer covers described sacrifice layer opening and described first sacrifice layer at least partly, and the material of described second sacrifice layer is the material removed by cineration technics;
Described second sacrifice layer is formed a vibrating electrode, the 3rd sacrifice layer, fixed electrode film and protective layer successively, the material of described 3rd sacrifice layer is the material removed by cineration technics, and described protective layer seals described fixed electrode film, the 3rd sacrifice layer, the second sacrifice layer and the first sacrifice layer;
Protective layer described in selective etch and fixed electrode film, form a fixed electrode and sound holes, the 3rd sacrifice layer described in described sound holes exposed portion;
Substrate described in selective etch, forms a substrate opening, and described substrate opening exposes described sacrifice layer opening and described first sacrifice layer at least partly;
The first wet-etching technology is adopted to remove described first sacrifice layer; And
Adopt cineration technics to remove described second sacrifice layer and the 3rd sacrifice layer, form sound transducer.
Optionally, the material of described first sacrifice layer is polysilicon.
Optionally, the material of described substrate is silicon, adopts substrate described in the second wet-etching technology selective etch.
Optionally, described second wet-etching technology is identical with the process conditions of the first wet-etching technology.
Optionally, the preparation method of described sound transducer also comprises: formation one is around the base part of described first sacrifice layer, and described protective layer also covers described base part, and it is isolated that described base part and described first sacrifice layer pass through described protective layer.
Optionally, the material of described base part is oxide.
Optionally, the material of described second sacrifice layer and the 3rd sacrifice layer is amorphous carbon.
Optionally, the gas of described cineration technics comprises oxygen.
Optionally, the material of described protective layer is silicon nitride.
Optionally, the material of described vibrating electrode and fixed electrode is polysilicon.
Compared with prior art, the present invention forms one first successively and sacrifices in substrate, second sacrifice layer, vibrating electrode, 3rd sacrifice layer, fixed electrode film and protective layer, wherein, the material of described first sacrifice layer is the material removed by wet etching, the material of described second sacrifice layer and the 3rd sacrifice layer is the material removed by cineration technics, after the step of substrate described in selective etch, the first wet-etching technology is first adopted to remove described first sacrifice layer, the attaching space increasing podzolic gas and described second sacrifice layer can be formed, cineration technics is adopted to remove described second sacrifice layer and the 3rd sacrifice layer afterwards, form air chamber, etching liquid is not used in the process forming air chamber, so, can avoid or reduce etching liquid can remain in air chamber, thus improve the performance of sound transducer.
Accompanying drawing explanation
Fig. 1 to Fig. 9 is the generalized section of device architecture in the preparation method of sound transducer in prior art;
Figure 10 is the flow chart of the preparation method of sound transducer in one embodiment of the invention;
Figure 11 to Figure 21 is the generalized section of device architecture in the preparation method of sound transducer in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, the preparation method to sound transducer of the present invention is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
The invention provides a kind of preparation method of sound transducer, comprise the steps:
Step S11, provides a substrate;
Step S12, form one first sacrifice layer on the substrate, described first sacrifice layer is the loop configuration with a sacrifice layer opening, and the material of described first sacrifice layer is the material removed by wet etching;
Step S13, forms one second sacrifice layer, and described second sacrifice layer covers described first sacrifice layer and sacrifice layer opening, and the material of described second sacrifice layer is the material removed by cineration technics;
Step S14, described second sacrifice layer is formed a vibrating electrode, the 3rd sacrifice layer, fixed electrode film and protective layer successively, the material of described 3rd sacrifice layer is the material removed by cineration technics, and described protective layer seals described fixed electrode film, the 3rd sacrifice layer, the second sacrifice layer and the first sacrifice layer;
Step S15, protective layer described in selective etch and fixed electrode film, form a fixed electrode and sound holes, the 3rd sacrifice layer described in described sound holes exposed portion;
Step S16, substrate described in selective etch, forms a substrate opening, and described substrate opening exposes described sacrifice layer opening and described first sacrifice layer at least partly;
Step S17, adopts the first wet-etching technology to remove described first sacrifice layer; And
Step S18, adopts cineration technics to remove described second sacrifice layer and the 3rd sacrifice layer, forms sound transducer.
As from the foregoing, the present invention is after the step of substrate described in selective etch, the first wet-etching technology is first adopted to remove described first sacrifice layer, the attaching space increasing podzolic gas and described second sacrifice layer can be formed, adopt cineration technics to remove described second sacrifice layer and the 3rd sacrifice layer afterwards, form air chamber, etching liquid is not used in the process forming air chamber, so can avoid or reduce etching liquid can remain in air chamber, thus improve the performance of sound transducer.
Below in conjunction with Figure 10 to Figure 21, illustrate the preparation method of sound transducer of the present invention.Wherein, Figure 10 is the flow chart of the preparation method of sound transducer in one embodiment of the invention; Figure 11 to Figure 21 is the schematic diagram of device architecture in the preparation method of sound transducer in one embodiment of the invention.
First, carry out step S11, as shown in figure 11, provide a substrate 200, in the present embodiment, the material of described substrate 200 is silicon, and in other embodiments of the invention, the material of described substrate 200 also can be the semi-conducting material such as germanium, SiGe.
Then, carry out step S12, as shown in figure 12, described substrate 200 forms one first sacrifice layer 211, and described first sacrifice layer 211 is for having the loop configuration of a sacrifice layer opening 212.The material of described first sacrifice layer 211 is the material removed by wet etching, in the present embodiment, the material of described first sacrifice layer 211 is polysilicon, but the material of described first sacrifice layer 211 is not limited to polysilicon, other materials removed by wet etching that also can be known to the skilled person, such as silica, carborundum etc.In the process forming described first sacrifice layer 211, due to the reason of preparation technology, also may form the material rete identical with described first sacrifice layer 211 at the another side of described substrate 200, this is what it will be appreciated by those skilled in the art that, and therefore not to repeat here.
Then, carry out step S13, as shown in figure 13, form one second sacrifice layer 213, described second sacrifice layer 213 covers described sacrifice layer opening 212 and described first sacrifice layer 211 at least partly, in fig. 13, and the first sacrifice layer 211 described in described second sacrifice layer 213 cover part, in other embodiments of the invention, described second sacrifice layer 213 can also cover described first sacrifice layer 211 completely.Wherein, the material of described second sacrifice layer 213 is the material removed by cineration technics, and in the present embodiment, the material of described second sacrifice layer 213 is amorphous carbon, and amorphous carbon can be removed by cineration technics easily.In other embodiments of the invention, as long as the material of described second sacrifice layer 213 is the solid removed by cineration technics, all within thought range of the present invention, such as the material of described second sacrifice layer 213 can also be Other substrate materials, wherein polyimide film (PolyimideFilm, PIFilm) is comparatively conventional.
Afterwards, carry out step S14, described second sacrifice layer 213 is formed a vibrating electrode, the 3rd sacrifice layer, fixed electrode film and protective layer successively.
The detailed process of described step S14 is described in detail below in conjunction with Figure 14 to Figure 18.
As shown in figure 14, described second sacrifice layer 213 forms described vibrating electrode 220, and can be formed with crack 221 in described vibrating electrode 220, the signal to noise ratio of sound transducer can be improved in described crack 221.In addition, described second sacrifice layer 213 can also have the supporter supporting described vibrating electrode 220, this is what it will be appreciated by those skilled in the art that, and in order to clearly represent main contents of the present invention, above support does not specifically illustrate in fig. 14.In the present embodiment, the material of described vibrating electrode 220 is polysilicon.In other embodiments of the invention, the material of described vibrating electrode 220 can also be selected from the combination in any of aluminium, titanium, zinc, silver, gold, copper, tungsten, cobalt, nickel, tantalum, these metals of platinum one of them or they; Or, be selected from amorphous silicon, poly-SiGe, these conductive non-metals of amorphous germanium silicon or their combination in any; Or, be selected from described metal, conductive non-metals one of them and their combination in any and the combination of insulating barrier; But be not limited to these materials, the other materials that also can be known to the skilled person;
As shown in figure 15, described vibrating electrode 220 forms one the 3rd sacrifice layer 230, wherein, the material of described 3rd sacrifice layer 230 is the material removed by cineration technics, in the present embodiment, the material of described 3rd sacrifice layer 230 is amorphous carbon, and amorphous carbon can be removed by cineration technics easily.In other embodiments of the invention, as long as the material of described 3rd sacrifice layer 230 is the solid removed by cineration technics, all within thought range of the present invention, such as the material of described 3rd sacrifice layer 230 can also be Other substrate materials, and wherein polyimide film is comparatively conventional;
As shown in figure 16, described 3rd sacrifice layer 230 forms a fixed electrode film 240.In the present embodiment, the material of described fixed electrode film 240 is polysilicon.In other embodiments of the invention, the material of described fixed electrode film 240 can also be selected from the combination in any of aluminium, titanium, zinc, silver, gold, copper, tungsten, cobalt, nickel, tantalum, these metals of platinum one of them or they; Or, be selected from amorphous silicon, poly-SiGe, these conductive non-metals of amorphous germanium silicon or their combination in any; Or, be selected from described metal, conductive non-metals one of them and their combination in any and the combination of insulating barrier; But be not limited to these materials, the other materials that also can be known to the skilled person;
In the present embodiment, also formation one is around the base part 250 of described vibrating electrode 230, as shown in figure 17, described base part 250 is positioned at the outside of the loop configuration of described first sacrifice layer 211, and described base part 250 is isolated by fluting 231 with described first sacrifice layer 211.In the present invention, the material of described base part 250 is oxide, and in other embodiments of the invention, the material of described fixed electrode film 240 can also be selected from nitride, polysilicon, amorphous carbon or carbide one of them or combinations several arbitrarily; But be not limited to these materials, the other materials that also can be known to the skilled person;
As shown in figure 18; form protective layer 260; described protective layer 260 seals described fixed electrode film 240, the 3rd sacrifice layer 230, second sacrifice layer 213 and the first sacrifice layer 211; described protection 260 also covers described base part 250; described fluting 231 is filled in described protection 260, to isolate described base part 250 and described first sacrifice layer 211.In the present embodiment, the material of described protective layer 260 is silicon nitride, and silicon nitride can preferably air-isolation and moisture, and in other embodiments of the invention, the material of described protective layer 260 can also be the material such as silica, titanium nitride.
Then, carry out step S15, as shown in figure 19, protective layer 260 described in selective etch and fixed electrode 240 successively, forms a fixed electrode 241 and sound holes 261, the 3rd sacrifice layer 230 described in described sound holes 261 exposed portion.In the present invention, first carry out step S15 and carry out step S16 again, in other embodiments of the invention, can also first carry out step S16 and carry out step S15 again.
Afterwards, carry out step S16, as shown in figure 20, substrate 200 described in selective etch, form a substrate opening 201, described substrate opening 201 exposes described sacrifice layer opening 212 (making the second sacrifice layer 213 described in described substrate opening 201 exposed portion) and described first sacrifice layer 211 at least partly.In the present embodiment, adopt substrate 200 described in the second wet-etching technology selective etch, material due to described substrate 200 is silicon, the material of described first sacrifice layer 211 is polysilicon, material and described first sacrifice layer 211 of described substrate 200 can adopt identical etching liquid to etch, so, while substrate 200 described in the second wet-etching technology selective etch, described first sacrifice layer 211 is continued described first sacrifice layer 211 of corrosion by the etching liquid of the second wet-etching technology, namely carried out step S17 and removed described first sacrifice layer 211, form attaching space 215, described second sacrifice layer 213 and the 3rd sacrifice layer 230 form the sacrifice layer of air chamber.
In the present embodiment, the first wet etching removing described first sacrifice layer is identical with described second wet-etching technology, described step S16 and step S17 carries out simultaneously, in other embodiments of the invention, when the material of described substrate 200 and the materials variances of described first sacrifice layer 211 larger time (as described in the material of substrate 200 be silicon, the material of described first sacrifice layer 211 is silica), when the material of described substrate 200 and described first sacrifice layer 211 can not adopt identical etching liquid to etch, described first wet etching is not identical with described second wet-etching technology, then described step S16 and step S17 carries out respectively.
In the present embodiment, the etching liquid (process silicon etching solution of such as TEMA) of described second wet-etching technology can etch along the carrying out of silicon, forms the diminishing described substrate opening 201 of A/F as shown in figure 20.
Finally, carry out step S18, as shown in figure 21, adopt cineration technics to remove described second sacrifice layer 213 and the 3rd sacrifice layer 230, form air chamber 280, and form sound transducer as shown in figure 21.In the present embodiment, the concrete grammar removing described second sacrifice layer 213 and the 3rd sacrifice layer 230 is: wait ionization oxygen to form oxygen plasma; Described oxygen plasma is passed into described substrate opening 201 and sound holes 261, the second sacrifice layer 213 and the 3rd sacrifice layer 230 described in ashing under the condition of temperature range for 150 DEG C ~ 450 DEG C.Be remove described second sacrifice layer 213 under the condition of 150 DEG C ~ 450 DEG C and the 3rd sacrifice layer 230 can ensure that the structures such as substrate 200 are injury-free in temperature range.Etching liquid is not used in the process forming air chamber 280, so, can avoid or reduce etching liquid and can remain in air chamber 280, thus improve the performance of sound transducer.
The sound transducer that the present invention is formed may be used for making microphone, described microphone is except comprising described sound transducer, can also comprise for the circuit of process output from the signal of described sound transducer, described circuit is what those having ordinary skill in the art will appreciate that, and therefore not to repeat here.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a preparation method for sound transducer, comprising:
One substrate is provided;
Form one first sacrifice layer on the substrate, described first sacrifice layer is the loop configuration with a sacrifice layer opening, and the material of described first sacrifice layer is the material removed by wet etching;
Form one second sacrifice layer, described second sacrifice layer covers described sacrifice layer opening and described first sacrifice layer at least partly, and the material of described second sacrifice layer is the material removed by cineration technics;
Described second sacrifice layer is formed a vibrating electrode, the 3rd sacrifice layer, fixed electrode film and protective layer successively, the material of described 3rd sacrifice layer is the material removed by cineration technics, and described protective layer seals described fixed electrode film, the 3rd sacrifice layer, the second sacrifice layer and the first sacrifice layer;
Protective layer described in selective etch and fixed electrode film, form a fixed electrode and sound holes, the 3rd sacrifice layer described in described sound holes exposed portion;
Substrate described in selective etch, forms a substrate opening, and described substrate opening exposes described sacrifice layer opening and described first sacrifice layer at least partly;
The first wet-etching technology is adopted to remove described first sacrifice layer; And
Adopt cineration technics to remove described second sacrifice layer and the 3rd sacrifice layer, form sound transducer.
2. the preparation method of sound transducer as claimed in claim 1, it is characterized in that, the material of described first sacrifice layer is polysilicon.
3. the preparation method of sound transducer as claimed in claim 2, it is characterized in that, the material of described substrate is silicon, adopts substrate described in the second wet-etching technology selective etch.
4. the preparation method of sound transducer as claimed in claim 3, it is characterized in that, described second wet-etching technology is identical with the process conditions of the first wet-etching technology.
5. as the preparation method of the sound transducer in claim 1-4 as described in any one; it is characterized in that; the preparation method of described sound transducer also comprises: formation one is around the base part of described first sacrifice layer; described protective layer also covers described base part, and it is isolated that described base part and described first sacrifice layer pass through described protective layer.
6. the preparation method of sound transducer as claimed in claim 5, it is characterized in that, the material of described base part is oxide.
7. the preparation method of sound transducer as claimed in claim 1, it is characterized in that, the material of described second sacrifice layer and the 3rd sacrifice layer is amorphous carbon.
8. the preparation method of sound transducer as claimed in claim 7, it is characterized in that, the gas of described cineration technics comprises oxygen.
9. the preparation method of sound transducer as claimed in claim 1, it is characterized in that, the material of described protective layer is silicon nitride.
10. the preparation method of sound transducer as claimed in claim 1, it is characterized in that, the material of described vibrating electrode and fixed electrode is polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563735.5A CN105530577B (en) | 2014-10-21 | 2014-10-21 | The preparation method of sound transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563735.5A CN105530577B (en) | 2014-10-21 | 2014-10-21 | The preparation method of sound transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105530577A true CN105530577A (en) | 2016-04-27 |
| CN105530577B CN105530577B (en) | 2019-07-02 |
Family
ID=55772498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410563735.5A Active CN105530577B (en) | 2014-10-21 | 2014-10-21 | The preparation method of sound transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105530577B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107529120A (en) * | 2016-06-20 | 2017-12-29 | 上海丽恒光微电子科技有限公司 | Microphone sensor and preparation method thereof |
| CN107973266A (en) * | 2016-10-24 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN108203075A (en) * | 2016-12-19 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
| CN112115759A (en) * | 2020-04-07 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Fingerprint identification module and forming method thereof |
| CN112580534A (en) * | 2020-12-23 | 2021-03-30 | 上海思立微电子科技有限公司 | Ultrasonic fingerprint sensing chip, electronic equipment and manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1791281A (en) * | 2004-12-13 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro condenser microphone chip and its preparing method |
| CN102616727A (en) * | 2011-01-31 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Micro electro mechanical system (MEMS) device and manufacture method of MEMS device |
| CN103373698A (en) * | 2012-04-26 | 2013-10-30 | 张家港丽恒光微电子科技有限公司 | Method for manufacturing MEMS (Micro Electro Mechanical System) and MEMS inertial sensor |
| CN103832967A (en) * | 2014-03-10 | 2014-06-04 | 上海先进半导体制造股份有限公司 | Method for processing micro-electromechanical systems (MEMS) sensor |
| US20140270271A1 (en) * | 2013-03-14 | 2014-09-18 | Infineon Technologies Ag | MEMS Acoustic Transducer, MEMS Microphone, MEMS Microspeaker, Array of Speakers and Method for Manufacturing an Acoustic Transducer |
-
2014
- 2014-10-21 CN CN201410563735.5A patent/CN105530577B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1791281A (en) * | 2004-12-13 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro condenser microphone chip and its preparing method |
| CN102616727A (en) * | 2011-01-31 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Micro electro mechanical system (MEMS) device and manufacture method of MEMS device |
| CN103373698A (en) * | 2012-04-26 | 2013-10-30 | 张家港丽恒光微电子科技有限公司 | Method for manufacturing MEMS (Micro Electro Mechanical System) and MEMS inertial sensor |
| US20140270271A1 (en) * | 2013-03-14 | 2014-09-18 | Infineon Technologies Ag | MEMS Acoustic Transducer, MEMS Microphone, MEMS Microspeaker, Array of Speakers and Method for Manufacturing an Acoustic Transducer |
| CN103832967A (en) * | 2014-03-10 | 2014-06-04 | 上海先进半导体制造股份有限公司 | Method for processing micro-electromechanical systems (MEMS) sensor |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107529120A (en) * | 2016-06-20 | 2017-12-29 | 上海丽恒光微电子科技有限公司 | Microphone sensor and preparation method thereof |
| CN107529120B (en) * | 2016-06-20 | 2019-10-25 | 上海丽恒光微电子科技有限公司 | Microphone sensor and preparation method thereof |
| CN107973266A (en) * | 2016-10-24 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN107973266B (en) * | 2016-10-24 | 2020-07-07 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, preparation method and electronic device |
| CN108203075A (en) * | 2016-12-19 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
| CN108203075B (en) * | 2016-12-19 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, preparation method thereof and electronic device |
| CN112115759A (en) * | 2020-04-07 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Fingerprint identification module and forming method thereof |
| CN112580534A (en) * | 2020-12-23 | 2021-03-30 | 上海思立微电子科技有限公司 | Ultrasonic fingerprint sensing chip, electronic equipment and manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105530577B (en) | 2019-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105530577A (en) | Method for preparing sound sensor | |
| CN107285273B (en) | Systems and methods for comb drive MEMS devices | |
| US7834409B2 (en) | Micromechanical component and corresponding method for its manufacture | |
| US10497613B2 (en) | Microelectronic conductive routes and methods of making the same | |
| US10065852B2 (en) | MEMS device and manufacturing method thereof | |
| US8165324B2 (en) | Micromechanical component and method for its production | |
| JP6415692B2 (en) | Multi-gate high electron mobility transistor and manufacturing method | |
| CN110178385A (en) | MEMS microphone system with electrode assemblies | |
| US8955212B2 (en) | Method for manufacturing a micro-electro-mechanical microphone | |
| US9736605B2 (en) | Method of manufacturing microphone, microphone, and control method therefor | |
| WO2012122869A1 (en) | Mems microphone and forming method therefor | |
| US11649162B2 (en) | Particle filter for MEMS device | |
| JP2014086447A (en) | Electronic apparatus and manufacturing method of the same | |
| JP2016529708A (en) | Method for forming fins on a substrate from different materials | |
| KR20180058515A (en) | Microphone and manufacturing method therefor | |
| CN104980858B (en) | The forming method of MEMS microphone | |
| JP2007243757A (en) | Condenser microphone | |
| CN105439077A (en) | Preparation method of pressure sensor | |
| TWI775133B (en) | Micro-electromechanical system device and method of forming the same | |
| US20190267961A1 (en) | Resonator structure encapsulation | |
| KR102475233B1 (en) | Group III-N MEMS Structures on Group IV Substrates | |
| CN109534277A (en) | MEMS microphone and forming method thereof | |
| JP2004314289A (en) | Manufacturing method of micro machine | |
| JP2014192798A (en) | Electronic device, method of manufacturing the same, and oscillator | |
| JP4737720B2 (en) | Diaphragm, manufacturing method thereof, condenser microphone having the diaphragm, and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |