CN1859815B - Polycrystal silicon vibration film silicon micro capacitor microphone chip and its preparing method - Google Patents
Polycrystal silicon vibration film silicon micro capacitor microphone chip and its preparing method Download PDFInfo
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- CN1859815B CN1859815B CN2005100680063A CN200510068006A CN1859815B CN 1859815 B CN1859815 B CN 1859815B CN 2005100680063 A CN2005100680063 A CN 2005100680063A CN 200510068006 A CN200510068006 A CN 200510068006A CN 1859815 B CN1859815 B CN 1859815B
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Abstract
The present invention discloses polysilicon vibration membrane silicon micro-condenser microphone chip and preparation method. Said silicon micro-condenser microphone chip includes polysilicon vibration membrane , protective layer, isolating layer, air gap, silicon chip and punching backboard, said punching backboard including one doping layer and having plurality of acoustic holes, said acoustic hole formed by etching one continuous doping layer. Said preparation method includes forming one continuous doping layer on said silicon chip upper surface, said doping layer forming at least a part of punching backboard of silicon micro-condenser microphone chip, from said continuous doping layer upper surface down etching out plurality of acoustic hole formed acoustic hole pattern. The present invention adopts polysilicon as vibrating membrane, making completely compatibility with plane semiconductor technology.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, the present invention relates to a kind of polycrystal silicon vibration film silicon micro capacitor microphone chip and preparation method thereof.
Background technology
Silicon micro capacitor microphone is a kind of novel microphone, and it is grouped into by the silicon part and the peripheral circuit portion that form silicon micro capacitor usually.Wherein the silicon micro capacitor chip partly is the core of microphone, and it is to utilize modern very lagre scale integrated circuit (VLSIC) technology, and the body etching technics by complexity on silicon chip is made.Silicon micro capacitor chip part by silicon chip and on the perforation backboard acoustic holes backboard, air-gap, separator, protective layer, vibrating membrane and metal electrode are formed in other words.Because the complexity of its manufacture craft, along with the development of technology, a lot of new structures and preparation method thereof constantly are suggested.
Known, P.-C.Hsu etc. once proposed to adopt square air gap abroad, the microphone chip structure of separator and polysilicon vibrating membrane and preparation method (see Micro Electro Mechanical Systems (MEMS), 1998 IEEE 11th International Workshop p580-585, by P.-C.Hsu, C.H.Mastrangelo, described in " A HIGH SENSITIVITY POLYSILICON DIAPHRAGMCONDENSER MICROPHONE " literary composition that and K.D.Wise is shown), one of shortcoming of this silicon micro capacitor microphone chip is to concentrate at the sharp corner generation stress of square vibrating membrane, and then causing the sensitivity decline and even the vibrating membrane of microphone to break, rate of finished products is very low.Another shortcoming is to adopt the degree of depth (10 to 20 microns) the dense boron diffusion of selectivity to make the acoustic holes of perforation backboard, and this can bring many technologic difficulties.
The applicant is to have proposed to overcome square vibrating membrane with regard to the silicon micro capacitor microphone of low stress nitride silicon vibrating membrane in 03153254.3 and 03153253.5 the Chinese patent application to produce stress at sharp corner and concentrate the problem of being brought at application number, microphone chip that has annular separator and circular air-gap and preparation method thereof has been proposed, in its preparation process, use two kinds of different thin-film materials respectively as annulus separator and circular sacrifice layer.Fig. 1 shows a kind of like this profile of silicon micro capacitor microphone chip 10, includes a silicon chip 11.This silicon chip 11 has a hollow area 12 that is essentially terrace with edge shape, and the upper end of hollow area 12 has a circular perforations backboard 13 that is formed in the silicon chip upper surface.Have a plurality of acoustic holes 14 on this perforation backboard 13, so that form the acoustic holes pattern.Upper surface at silicon chip 11 also is formed with an annular separator 15, and is formed with a Round Membranes 16 on the separator 15.By separator 15, between perforation backboard 13 and vibrating membrane 16, provide circular air-gap 17.Has electrode 18 respectively on perforation backboard 13 and the vibrating membrane 16.In these two applications, annular separator 15 in the microphone chip 10 and circular air-gap 17 can effectively reduce concentrating of stress, break thereby improved microphone chip sensitivity and reduced vibrating membrane.
More than the vibrating membrane of several known silicon micro capacitor microphone chips all be low stress nitride silicon, the preparation of its perforation backboard all is to carry out the degree of depth (10 to 20 microns) the dense boron diffusion of selectivity at silicon chip (for example silicon chip 11 of Fig. 1) front surface earlier, promptly dense boron diffusion is carried out in the zone outside the acoustic holes of perforation backboard, form a doped layer, this doped layer stops layer certainly as the body etching simultaneously, then, carrying out the body etching again from the rear surface forms.The perforation backboard of Xing Chenging (for example perforation backboard 13 among Fig. 1) only comprises the doped layer layer of material usually like this.This with low stress nitride silicon as vibrating membrane and adopt the shortcoming of the dense boron diffusion method of depth-selectiveness preparation perforation backboard mainly to comprise:
1) manufacture craft of low stress nitride silicon fiml is still in conceptual phase, and especially the making of silicon-rich silicon nitride has very strong corrosivity to equipment, and a lot of manufacturers of semiconductor devices all can not be made the low stress nitride silicon fiml.
2) the acoustic holes zone is to limit by the dense boron diffusion of selectivity, that is to say, when carrying out dense boron diffusion on the surface of silicon chip, do not mix in the zone that will become acoustic holes, and silicon materials etching that should the zone when the body etching is removed to form acoustic holes.Optionally dense boron diffusion is very difficult on technology, the one, because in the depth direction diffusion, also have horizontal diffusion, the 2nd, the diffusion mask can not stop the diffusion at reserve area sometimes fully, thereby causes the result of the dense boron diffusion of selectivity undesirable, even failure.
3) because the perforation backboard only is made up of the doped layer layer of material,, need carry out the dense boron diffusion of the degree of depth in order to reach the thickness requirement (usually between 12 microns to 20 microns) of perforation backboard.And the dense boron diffusion of degree of depth length consuming time (generally wanting more than 20 hours), and the dense boron diffusion of the degree of depth causes that easily silicon chip upwarps at the edge, makes the dense boron diffusion of the degree of depth various technologies thereafter make relatively difficulty.Particularly big silicon chip (as 4 inches or the bigger substrate) influence to production usefulness is bigger.
4) because this anisotropy of silicon in corrosive liquid, the chip transaudient to silicon micro capacitor, back plate thickness requires between 12 microns to 20 microns, so, backboard perforation with the dense boron diffusion preparation of the degree of depth just can not be too little, therefore, the size of silicon micro capacitor microphone chip just can not be too little, and this cost that makes silicon micro capacitor microphone chip when producing in enormous quantities is than higher.
Summary of the invention
The objective of the invention is to overcome the dense boron diffusion of depth-selectiveness and make the shortcoming and defect that the perforation of silicon micro capacitor microphone chip backboard is brought, thereby a kind of polycrystal silicon vibration film silicon micro capacitor microphone chip and preparation method thereof is provided.
To achieve these goals, the invention provides a kind of polycrystal silicon vibration film silicon micro capacitor microphone chip, comprise silicon chip and on perforation backboard, separator, protective layer, vibrating membrane and electrode, described protective layer is on described separator, and with its encirclement, described separator and protective layer are between described perforation backboard and described vibrating membrane, in order to the air-gap between described perforation backboard and the described vibrating membrane to be provided, described perforation backboard comprises a doped layer and has the acoustic holes pattern of being made up of a plurality of acoustic holes; Acoustic holes on the described perforation backboard is that etching one continuous doped layer forms.
Described perforation backboard only is made up of doped layer, and described acoustic holes is passed described doped layer; Perhaps, described perforation backboard comprises that also one is positioned at the silicon material layer under the doped layer, and described acoustic holes is passed described doped layer and described silicon material layer.Described separator is an annular.Acoustic holes on the described perforation backboard is to form with the described continuous doped layer of inductively coupled plasma etching.Described vibrating membrane is the polysilicon vibrating membrane that injects and anneal through ion.Described protective layer adopts the low stress nitride silicon fiml.
The preparation method of polycrystal silicon vibration film silicon micro capacitor microphone chip provided by the invention comprises:
Step 1 a: silicon chip with upper surface and lower surface is provided;
Step 2: from the upper surface of described silicon chip described silicon chip being mixed forms a continuous doped layer;
Step 3: on the upper surface of described silicon chip, form a separator;
Step 4: on described separator, form a protective layer;
Step 5: etch the acoustic holes pattern of forming by a plurality of acoustic holes downwards from the upper surface of described continuous doped layer;
Step 6: form a sacrifice layer on the upper surface of described silicon chip and in the described acoustic holes;
Step 7: on described sacrifice layer, form a polysilicon vibrating membrane and carry out ion injection and annealing;
Step 8: on described polysilicon vibrating membrane and doped layer, form electrode respectively;
Step 9: from the lower surface of described silicon chip described silicon chip is carried out etching, and etching is removed described sacrifice layer, at least a portion perforation backboard of described doped layer formation silicon micro capacitor microphone chip.
In step 9, when the lower surface of described silicon chip carried out etching to described silicon chip, this etching proceeded to described doped layer, makes described perforation backboard only be made up of described doped layer.In step 9, when the lower surface of described silicon chip carried out etching to described silicon chip, this etching also residual was positioned at the silicon material layer of described doped layer below, makes described perforation backboard be made up of described doped layer and described residual silicon material layer.In step 9, utilize time of control etching to control the thickness of described residual silicon material layer.
In step 5, described acoustic holes pattern is to form with the described continuous doped layer of inductively coupled plasma etching.
The present invention has following beneficial effect:
1) polysilicon that adopts of the present invention silicon micro capacitor microphone chip of making vibrating membrane and preparation method thereof is compatible fully with existing planar semiconductor technology, can directly be transformed into industrialized mass from laboratory sample.
2) the present invention adopts and prepare acoustic holes in advance by etching on continuous doped layer, particularly can select ICP (inductively coupled plasma) etching technics to come the etching doped layer, say in principle, the backboard perforation of this method preparation is little of several micron dimensions, like this, the sound hole dimension of silicon micro capacitor microphone chip will no longer become the factor of restriction silicon micro capacitor microphone chip size.
3) in a kind of preferred implementation of the present invention, the perforation backboard of microphone chip can be compound backboard, comprise that one deck doped layer and one deck do not erode and residual silicon material layer, like this, using when preparing doped layer such as dense boron diffusion, do not need to carry out deep diffusion, thus avoided the dense boron diffusion of depth-selectiveness make the backboard perforation bring the silicon chip edge upwarp with silicon micro capacitor microphone chip can not be too little etc. problem.
In a word, polycrystal silicon vibration film silicon micro capacitor microphone chip provided by the invention and preparation method thereof, not only with existing semiconductor technology compatibility, and overcome the dense boron diffusion of depth-selectiveness and make problem and the difficulty that backboard and backboard perforation are brought, for the suitability for industrialized production microphone chip provides a cover simple and easy to do technology.
Description of drawings
Fig. 1 is the structural representation of a kind of silicon micro capacitor microphone chip of relating in the background technology;
Fig. 2 is the generalized section after the silicon chip upper surface forms doped layer in the embodiment of the invention 1;
Fig. 3 is the embodiment of the invention 1 junction diagram 2 generalized section after forming separator, protective layer on the silicon chip and etching acoustic holes afterwards;
Fig. 4 is the embodiment of the invention 1 junction diagram 3 generalized section after forming sacrifice layer and vibrating membrane on the silicon chip afterwards;
Fig. 5 is the structural representation of the embodiment of the invention 1, that is: after Fig. 4 to silicon chip carry out the body etching remove sacrifice layer and electrode be set after the generalized section of the final silicon micro capacitor microphone chip that forms;
Fig. 6 is the vertical view of the silicon micro capacitor microphone chip of the embodiment of the invention 1;
Fig. 7 is the generalized section after the silicon chip upper surface forms doped layer in the embodiment of the invention 2;
Fig. 8 is the embodiment of the invention 2 junction diagrams 7 generalized sections after forming separator on the silicon chip and etching acoustic holes afterwards;
Fig. 9 is the structural representation of the embodiment of the invention 2, that is: the generalized section after forming sacrifice layer and vibrating membrane on the silicon chip after Fig. 8;
Figure 10 is the generalized section of the final silicon micro capacitor microphone chip that forms after the embodiment of the invention 2 junction diagrams 9 carry out body etching removal sacrifice layer and electrode is set silicon chip afterwards.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1:
Fig. 2～Fig. 5 shows the preparation flow of silicon micro capacitor microphone chip of the present invention in one embodiment, wherein the microphone chip for preparing for the method according to this invention of Fig. 5.
As shown in Figure 2, at first choose a silicon chip 100, this silicon chip 100 can be n type or p+ type silicon chip.Silicon chip 100 has a upper surface 101 and a lower surface 102, in one embodiment, the thickness of this silicon chip 100 is 400 microns, but is appreciated that those skilled in the art can select the silicon chip 100 of different-thickness according to needed microphone chip size.Silicon chip 100 is through high temperature oxidation process growth one deck high temperature silica, and exemplarily, the thickness of this high temperature silica is 1 micron; Make mask 103 utilizing hydrofluoric acid corrosion high temperature silica on the upper surface 101 of silicon chip 100 after to this floor height temperature silicon dioxide photoetching.Outside the overlay area of mask 103, mix from 101 pairs of silicon chips 100 of upper surface, to form a continuous doped layer 104.Can adopt dense boron diffusion or phosphorus to inject to the doping of silicon chip 100 here, mixes.From following description as can be known, in the present embodiment, the perforation backboard of microphone chip is only formed by doped layer 104 layer of material, and therefore, the thickness of doped layer 104 is identical with the thickness of needed perforation backboard in the present embodiment.For example, the thickness of microphone chip perforation backboard usually between 12 microns to 20 microns, therefore, in the present embodiment, the thickness of doped layer 104 also can be selected between 12 microns to 20 microns, and those skilled in the art also can make other selection according to actual needs.
As shown in Figure 3; with the high temperature silica mask 103 among hydrofluoric acid removal Fig. 2; upper surface 101 at silicon chip 100 forms a low temperature silicon dioxide separator 105 and a silicon nitride protective layer 106 then, and is the residual composite membrane of one deck 108 on the lower surface 102 of silicon chip 100.This separator 105 is preferably hollow circle, and protected seam 106 surrounds on every side.Can form by the following method: the upper surface 101 at silicon chip 100 forms one deck low temperature silicon dioxide, then this layer low temperature silicon dioxide is carried out going out to comprise with reactive ion etching (IRE) after the photoetching separator 105 of hollow circle and hearth electrode; Then, the one low stress nitride silicon fiml protective layer 106 of deposit thereon, and go out hollow circle with reactive ion etching (IRE); Because generally, the stress of silicon nitride film is bigger, and thicker silicon nitride film adopts silicon nitride/silicon dioxide/silicon nitride sandwich structure of composite membrane.Etching acoustic holes 107 on doped layer 104 then; in one embodiment; the thickness of separator 105 low temperature silicon dioxide is 3.5 microns; the thickness of protective layer 106 silicon nitrides is 0.35 micron (sandwich of Cai Yonging wherein; i.e. 0.15 micron silicon nitride/0.05 micron silica/0.15 micron silicon nitride); doped layer 104 region surface that separator 105 and protective layer 106 are surrounded are carried out whirl coating; make needed acoustic holes pattern by lithography, use inductively coupled plasma (ICP) technology to etch a plurality of acoustic holes 107 of forming the acoustic holes pattern then.These acoustic holes 107 see through the whole thickness of doped layer 104, and it highly is a bit larger tham the thickness of doped layer 104.In addition, acoustic holes 107 can adopt such as shapes known in those skilled in the art such as squares.Like this, comprise that the doped layer 104 by a plurality of acoustic holes 107 has formed the perforation backboard of silicon micro capacitor microphone chip.
From Fig. 2 and Fig. 3 as can be known, than limiting acoustic holes by optionally mixing, in the present invention, the acoustic holes 107 of microphone chip perforation backboard is that etching forms on a continuous doped layer 104.
As shown in Figure 4, after the glue that is got rid of when removing photoetching acoustic holes pattern, around 106 region surrounded of protective layer, form a sacrifice layer 109, and form a polysilicon vibrating membrane 110 thereon.This sacrifice layer 109 is full of the space that protective layer 106 is centered on, and has been full of each acoustic holes 107 that forms in Fig. 3 simultaneously.In one embodiment, the method of available deposit, deposit goes out the sacrifice layer 109 of a phosphorosilicate glass (PSG), because during deposit, silicon chip 100 is immersed in the plasma, so each side deposit simultaneously of the acoustic holes 107 that phosphorosilicate glass (PSG) etches at ICP, acoustic holes 107 will be full of by phosphorosilicate glass (PSG) sacrifice layer 109 very soon, the sacrifice layer substantially flat of deposit this moment just has a small pit at the center of acoustic holes 107, this pit is to not influence of device performance.Then; sacrifice layer 109 is carried out eroding away needed sacrifice layer shape with the hydrofluoric acid that cushions after the photoetching; for example, sacrifice layer 109 can be eroded away circular sacrifice layer 109 with hollow circular separator 105 and protective layer 106 hollow circular shape concentrics for the separator 105 and the protective layer 106 of Fig. 4 hollow core circle.Then, deposit one polysilicon film 110 on sacrifice layer 109 and protective layer 106, and carry out ion and inject and etching, form circular low stress vibrating membrane.Exemplarily, the thickness of sacrifice layer 109 is 4 microns, and the thickness of polysilicon film 110 is 3 microns.Behind the method generation polysilicon film with deposit, carry out ion injection and annealing with conductivity that increases film and the internal stress that reduces film.Then, use inductively coupled plasma (ICP) technology to etch circular polysilicon vibrating membrane 110 again, the vibrating membrane of this moment also is a conducting film.As shown in Figure 6, for hollow circular separator 105 and protective layer 106 and circular sacrifice layer 109, the shape of vibrating membrane 110 correspondingly is circular.In Fig. 4, the residual composite membrane 108 of substrate 100 lower surfaces has increased one deck phosphorosilicate glass and polycrystalline silicon material again, and it can be as the mask of body etching.
As shown in Figure 5, etch the window of hearth electrode from doped layer 104, and vacuum evaporation metal and photoetching corrosion go out metal electrode 111 (as gold electrode) on polysilicon vibrating membrane 110 and doped layer 104, this metal electrode comprises top electrode and hearth electrode.With residual composite membrane 108 as mask, begin silicon chip 100 usefulness EPW or potassium hydroxide are carried out silicon body etching from the lower surface 102 of silicon chip 100, because corrosive liquid is to the anisotropy of silicon chip corrosion, when eroding to doped layer 104, the body etching just stops to form hollow terrace with edge 112 automatically.Then, hydrofluoric acid corrosion phosphorosilicate glass (PSG) sacrifice layer 109 with buffering, since the hydrofluoric acid of buffering to the corrosion rate of phosphorosilicate glass (PSG) sacrifice layer 109 in the acoustic holes 107 far above doped layer 104 zones around it, acoustic holes 107 interior sacrifice layers 109 are eroded very soon, thereby expose original acoustic holes 107 that etching forms in Fig. 3.And then hydrofluoric acid further arrives phosphorosilicate glass (PSG) sacrifice layer 109 that protective layer 106 is surrounded by acoustic holes 107, and sacrifice layer 109 is all corroded.At last, utilize the method for displacement and low-temperature distillation that corrosive liquid and water are discharged again, thereby at the doped layer 104 formation air-gap 113 between backboard and the vibrating membrane 110 of boring a hole in other words.The position of vibrating membrane 110 and metal electrode 111 is seen clearlyer in Fig. 6.As can be seen from the figure, polysilicon vibrating membrane 110 is simultaneously also as conducting film, because do not cover conducting metal on the whole vibrating membrane, and the metal electrode 111 on it just is used for connecting lead-in wire.
Embodiment 2:
Fig. 7～Figure 10 shows the preparation flow of silicon micro capacitor microphone chip of the present invention in another embodiment, wherein Figure 10 microphone chip of preparing of the method according to this invention in this embodiment.Hereinafter in the description to embodiment 2, the part identical with embodiment 1 no longer narrated, emphasis is described the difference part of embodiment 2 and embodiment 1, wherein, in Fig. 7～Figure 10, still use the label consistent with Fig. 2～Fig. 5 with embodiment 1 identical composition, the part different with embodiment 1 adopts other label.
As shown in Figure 7, the difference of present embodiment and embodiment 1 is that the thickness of doped layer 104 is significantly less than the thickness of doped layer 104 among Fig. 2.Description from behind as can be known, in the present embodiment, the perforation backboard of microphone chip is a lamination layer structure, by doped layer 104 with and under one deck etching after residual silicon material layer form.Therefore, in the present embodiment, guaranteeing that by silicon material layer doped layer 104 can be thinner, can select usually under the situation of perforation back plate thickness between 0.1 micron～3 microns.
As shown in Figure 8, be that with the difference of Fig. 3 acoustic holes 107 sees through the whole thickness of doped layer 104 and continues to extend downwards, the height of acoustic holes 107 thickness with desired perforation backboard basically is identical.Basically the thickness with doped layer 104 is identical.For example, the thickness of microphone chip perforation backboard usually between 12 microns to 20 microns, therefore, in the present embodiment, the height of acoustic holes 107 also can be selected between 12 microns to 20 microns, and those skilled in the art also can make other selection according to actual needs.
As shown in Figure 9, compare with Fig. 4, remove doped layer 104 different with doped layer 104 thickness among Fig. 3 outside, other process is basic identical.
As shown in figure 10, compare with Fig. 5, in the present embodiment, when silicon chip 100 is carried out the body etching, residual below doped layer 104 have a silicon material layer 214, and the lamination layer structure that this residual silicon material layer 214 and doped layer 104 form has been formed the perforation backboard of silicon microphone chip with acoustic holes 107.Wherein, the thickness of perforation backboard composite bed---specifically the thickness of silicon material layer 214 can decide the time of the body etching of silicon chip 100 by control, because the transaudient chip of silicon micro capacitor is not high to the required precision of perforation backboard composite bed thickness, therefore under the existing processes condition, adopting time method control is that those skilled in the art is easy to accomplish.
Claims (11)
1. polycrystal silicon vibration film silicon micro capacitor microphone chip, comprise silicon chip and on perforation backboard, separator, vibrating membrane and electrode, it is characterized in that described silicon micro capacitor microphone chip also comprises protective layer; Described protective layer is between separator and vibrating membrane, and separator surrounded, described separator and protective layer are between described perforation backboard and described vibrating membrane, in order to the air-gap between described perforation backboard and the described vibrating membrane to be provided, described perforation backboard comprises a doped layer and has the acoustic holes pattern of being made up of a plurality of acoustic holes; Acoustic holes on the described perforation backboard is that etching one continuous doped layer forms.
2. silicon micro capacitor microphone chip according to claim 1 is characterized in that, described perforation backboard only is made up of doped layer, and described acoustic holes is passed described doped layer.
3. silicon micro capacitor microphone chip according to claim 1 is characterized in that, described perforation backboard comprises that also one is positioned at the silicon material layer under the doped layer, and described acoustic holes is passed described doped layer and silicon material layer.
4. silicon micro capacitor microphone chip according to claim 1 is characterized in that, described separator is an annular.
5. silicon micro capacitor microphone chip according to claim 1 is characterized in that, the acoustic holes on the described perforation backboard is to form with the described continuous doped layer of inductively coupled plasma etching.
6. silicon micro capacitor microphone chip according to claim 1 is characterized in that, described vibrating membrane is the polysilicon vibrating membrane that injects and anneal through ion; Described protective layer adopts the low stress nitride silicon fiml.
7. the preparation method of a polycrystal silicon vibration film silicon micro capacitor microphone chip comprises:
Step 1 a: silicon chip with upper surface and lower surface is provided;
Step 2: from the upper surface of described silicon chip described silicon chip being mixed forms a continuous doped layer;
Step 3: on the doped layer of described silicon chip, form a separator;
Step 4: on described separator, form a protective layer;
Step 5: etch the acoustic holes pattern of forming by a plurality of acoustic holes downwards from the upper surface of described continuous doped layer;
Step 6: form a sacrifice layer on the upper surface of described silicon chip and in the described acoustic holes;
Step 7: on described sacrifice layer, form a polysilicon vibrating membrane and carry out ion injection and annealing;
Step 8: on described polysilicon vibrating membrane and doped layer, form electrode respectively;
Step 9: from the lower surface of described silicon chip described silicon chip is carried out etching, and etching is removed described sacrifice layer, at least a portion perforation backboard of described doped layer formation silicon micro capacitor microphone chip.
8. according to the preparation method of the described silicon micro capacitor microphone chip of claim 7, it is characterized in that, in step 9, when the lower surface of described silicon chip carries out etching to described silicon chip, this etching proceeds to described doped layer, makes described perforation backboard only be made up of described doped layer.
9. according to the preparation method of the described silicon micro capacitor microphone chip of claim 7, it is characterized in that, in step 9, when the lower surface of described silicon chip carries out etching to described silicon chip, this etching also residual one is positioned at the silicon material layer of described doped layer below, makes described perforation backboard be made up of described doped layer and described residual silicon material layer.
10. according to the preparation method of the described silicon micro capacitor microphone chip of claim 9, it is characterized in that, in step 9, utilize time of control etching to control the thickness of described residual silicon material layer.
11. the preparation method according to the described silicon micro capacitor microphone chip of claim 7 is characterized in that, in step 4, described acoustic holes pattern is to form with the described continuous doped layer of inductively coupled plasma etching.
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| CN101346014B (en) * | 2007-07-13 | 2012-06-20 | 清华大学 | Micro electro-mechanical system microphone and preparation method thereof |
| CN101355827B (en) * | 2007-07-27 | 2012-01-04 | 苏州敏芯微电子技术有限公司 | Integrated preparation method for integrated circuit and capacitance type micro-silicon microphone single slice as well as chip |
| WO2014159552A1 (en) * | 2013-03-14 | 2014-10-02 | Robert Bosch Gmbh | Mems acoustic transducer with silicon nitride backplate and silicon sacrificial layer |
| KR102322257B1 (en) * | 2017-05-11 | 2021-11-04 | 현대자동차 주식회사 | Microphone and manufacturing method thereof |
| CN113582130B (en) * | 2021-07-27 | 2024-01-05 | 绍兴中芯集成电路制造股份有限公司 | Method for preparing MEMS device based on wafer |
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| US6383832B1 (en) * | 2001-04-16 | 2002-05-07 | Mitsubishi Denki Kabushiki Kaisha | Pressure responsive device and method of manufacturing semiconductor substrate for use in pressure responsive device |
| CN1582064A (en) * | 2003-08-12 | 2005-02-16 | 中国科学院声学研究所 | Chip for silicon micro capacitor microphone and its preparation method |
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| US6383832B1 (en) * | 2001-04-16 | 2002-05-07 | Mitsubishi Denki Kabushiki Kaisha | Pressure responsive device and method of manufacturing semiconductor substrate for use in pressure responsive device |
| CN1582064A (en) * | 2003-08-12 | 2005-02-16 | 中国科学院声学研究所 | Chip for silicon micro capacitor microphone and its preparation method |
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