CN101835085A - Method for manufacturing silicon-based condenser microphone - Google Patents
Method for manufacturing silicon-based condenser microphone Download PDFInfo
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- CN101835085A CN101835085A CN201010173256A CN201010173256A CN101835085A CN 101835085 A CN101835085 A CN 101835085A CN 201010173256 A CN201010173256 A CN 201010173256A CN 201010173256 A CN201010173256 A CN 201010173256A CN 101835085 A CN101835085 A CN 101835085A
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Abstract
The invention relates to a method for manufacturing a silicon-based condenser microphone, which comprises the following steps: step A: providing a silicon substrate and setting an oxide insulation layer on the silicon substrate; step B: setting a stress balance layer on the oxide insulation layer; step C: setting a polysilicon layer on the stress balance layer, doping, forming a doped layer after doping, to be used as an electrode plate of a capacitor; step D: realizing deposition of a sacrificial layer on the doped layer, and utilizing lithography for forming a plurality of counter bores on the sacrificial layer; step E: realizing the deposition of another electrode plate of the capacitor; step F: realizing the deposition of electrodes; step G: utilizing etching for forming a back cavity; and step H: releasing the sacrificial layer to obtain a gap between the two electrode plates. The silicon-based condenser microphone manufactured by the method has the advantages of high sensitivity and good consistency.
Description
Technical field
The present invention relates to a kind of manufacture method of silica-based condenser microphone.
Background technology
Development along with wireless telecommunications, Global Mobile Phone Users is more and more, the user not only is satisfied with conversation to the requirement of mobile phone, and want high-quality communication effect can be provided, especially at present the development of mobile multimedia technology, the speech quality of mobile phone becomes more important, and the microphone of mobile phone is as the voice pick device of mobile phone, and its design quality directly influences speech quality.
And the microphone of using more and better performances at present is microelectromechanical-systems microphone (Micro-Electro-Mechanical-System Microphone is called for short MEMS), and in the correlation technique, the MEMS microphone comprises substrate, backboard and vibrating diaphragm.Along with reducing of silica-based condenser microphone size, traditional potassium hydroxide wet etching is opened back of the body chamber can not satisfy microphone design dimensionally, so can use the method for deep reaction ion etching to etch back of the body chamber on the technology.And the method for deep reaction ion etching must be accompanied by the etching barrier layer that one deck is heavily stressed and thickness is thicker.Regrowth structure sheaf on this barrier layer (vibrating diaphragm or backboard) will be subjected to the Stress Transfer of silicon dioxide layer and cause very big stress gradient, thereby flexing takes place easily for uncontrollable flatness, reliability, is difficult to discharge stress gradient.Therefore, be necessary to provide a kind of novel silica-based condenser microphone manufacture method.
Summary of the invention
The technical problem that the present invention need solve provides a kind of manufacture method of silica-based condenser microphone of the sensitivity that can improve silica-based condenser microphone.
According to the above-mentioned technical problem that needs solution, designed a kind of manufacture method of silica-based condenser microphone, this method comprises the steps:
Steps A a: silicon base is provided, oxide insulating layer is set on the silicon base;
Step B: the stress equilibrium layer is set on the oxide insulating layer;
Step C: on the stress equilibrium layer polysilicon layer is set, mixes, form the doped layer after mixing, as a battery lead plate of electric capacity;
Step D: deposition of sacrificial layer on doped layer, on sacrifice layer, utilize photoetching to form some counterbores;
Step e: the another one battery lead plate of deposited capacitances;
Step F: depositing electrode;
Step G: utilize etching to form back of the body chamber;
Step H: releasing sacrificial layer obtains the gap between two battery lead plates.
Preferably, among the step C, described doped layer is the battery lead plate of vibrating diaphragm as electric capacity, and in the step e, the deposition backsheet layer is as another battery lead plate of electric capacity.
Preferably, among the step C, described doped layer is the battery lead plate of backsheet layer as electric capacity, and in the step e, the deposition vibrating diaphragm is as another battery lead plate of electric capacity.
Preferably, backsheet layer has protuberance, and backsheet layer partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
Preferably, vibrating diaphragm has protuberance, and vibrating diaphragm partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
Beneficial effect of the present invention is: because the stress equilibrium layer has the stress opposite with oxide insulating layer, thus can be used for the stress that balance is delivered to doped layer, thus flatness, reliability can be controlled; Low-pressure chemical vapor deposition silicon nitride corrosion rate in the oxide etching agent is extremely slow, can be used to prevent the undercutting that silicon dioxide brings when in the end discharging and the inaccurate shortcoming of the vibrating diaphragm dimension definitions that causes; Microphone can improve sensitivity, consistency when size reduces.
Description of drawings
Fig. 1 makes silica-based condenser microphone in the process with method provided by the invention.
Embodiment
The invention will be further described below in conjunction with drawings and embodiments.
Silicon capacitor microphone provided by the invention is mainly used in the electronic equipments such as mobile phone, is used to receive sound.Vibrating diaphragm is used for this silicon capacitor microphone.
The manufacture method of silica-based condenser microphone provided by the invention, this method comprises the steps:
Steps A a: silicon base is provided, oxide insulating layer is set on the silicon base.
Step B: the stress equilibrium layer is set on the oxide insulating layer;
Step C: on the stress equilibrium layer polysilicon layer is set, mixes, form the doped layer after mixing, as a battery lead plate of electric capacity;
Step D: deposition of sacrificial layer on doped layer, on sacrifice layer, utilize photoetching to form some counterbores;
Step e: the another one battery lead plate of deposited capacitances;
Step F: depositing electrode;
Step G: utilize etching to form back of the body chamber;
Step H: releasing sacrificial layer obtains the gap between two battery lead plates.
Among the step C, described doped layer is the battery lead plate of vibrating diaphragm as electric capacity, and in the step e, the deposition backsheet layer is as another battery lead plate of electric capacity.
Equally, among the step C, described doped layer is the battery lead plate of backsheet layer as electric capacity, and in the step e, the deposition vibrating diaphragm is as another battery lead plate of electric capacity.
That is to say that with the silica-based condenser microphone that this method is made, the position of backboard and vibrating diaphragm can exchange.
Wherein, backsheet layer has protuberance, and backsheet layer partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
Certainly, also can have protuberance by vibrating diaphragm, vibrating diaphragm partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
Can be referring to Fig. 1, as shown in Figure 1, silicon base 1 is provided with vibrating diaphragm 2, and backboard 3 is oppositely arranged with vibrating diaphragm 2, and vibrating diaphragm 3 is between backboard 3 and substrate 1.
Because the stress equilibrium layer has the stress opposite with oxide insulating layer, thus can be used for the stress that balance is delivered to doped layer, thus can control flatness, reliability; Low-pressure chemical vapor deposition silicon nitride corrosion rate in the oxide etching agent is extremely slow, can be used to prevent the undercutting that silicon dioxide brings when in the end discharging and the inaccurate shortcoming of the vibrating diaphragm dimension definitions that causes; Microphone can improve sensitivity, consistency when size reduces.
Above-described only is plurality of embodiments of the present invention, should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the invention design, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (5)
1. the manufacture method of a silica-based condenser microphone is characterized in that, this method comprises the steps:
Steps A a: silicon base is provided, oxide insulating layer is set on the silicon base;
Step B: the stress equilibrium layer is set on the oxide insulating layer;
Step C: on the stress equilibrium layer polysilicon layer is set, mixes, form the doped layer after mixing, as a battery lead plate of electric capacity;
Step D: deposition of sacrificial layer on doped layer, on sacrifice layer, utilize photoetching to form some counterbores;
Step e: the another one battery lead plate of deposited capacitances;
Step F: depositing electrode;
Step G: utilize etching to form back of the body chamber;
Step H: releasing sacrificial layer obtains the gap between two battery lead plates.
2. the manufacture method of silica-based condenser microphone according to claim 1, it is characterized in that: among the step C, described doped layer is the battery lead plate of vibrating diaphragm as electric capacity, in the step e, the deposition backsheet layer is as another battery lead plate of electric capacity.
3. the manufacture method of silica-based condenser microphone according to claim 1, it is characterized in that: among the step C, described doped layer is the battery lead plate of backsheet layer as electric capacity, in the step e, the deposition vibrating diaphragm is as another battery lead plate of electric capacity.
4. according to the manufacture method of claim 2 or 3 described silica-based condenser microphones, it is characterized in that: backsheet layer has protuberance, and backsheet layer partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
5. according to the manufacture method of claim 2 or 3 described silica-based condenser microphones, it is characterized in that: vibrating diaphragm has protuberance, and vibrating diaphragm partly enters counterbore and forms projection, and makes that thus groove appears in top, utilizes photoetching to form tone-entering hole again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010173256A CN101835085A (en) | 2010-05-10 | 2010-05-10 | Method for manufacturing silicon-based condenser microphone |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010173256A CN101835085A (en) | 2010-05-10 | 2010-05-10 | Method for manufacturing silicon-based condenser microphone |
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| CN101835085A true CN101835085A (en) | 2010-09-15 |
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| CN201010173256A Pending CN101835085A (en) | 2010-05-10 | 2010-05-10 | Method for manufacturing silicon-based condenser microphone |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106063296A (en) * | 2015-01-05 | 2016-10-26 | 歌尔股份有限公司 | Microphone with dustproof through holes |
| WO2021134688A1 (en) * | 2019-12-31 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Method for producing mems drive |
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| EP0727829A2 (en) * | 1993-03-19 | 1996-08-21 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| CN1791281A (en) * | 2004-12-13 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro condenser microphone chip and its preparing method |
| EP1931173A2 (en) * | 2006-12-06 | 2008-06-11 | Electronics and Telecommunications Research Institute | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same |
| CN101330026A (en) * | 2007-06-21 | 2008-12-24 | 新光电气工业株式会社 | Electronic device and method of manufacturing the same |
| CN101588529A (en) * | 2009-06-30 | 2009-11-25 | 瑞声声学科技(深圳)有限公司 | Silica-based condenser microphone and production method thereof |
-
2010
- 2010-05-10 CN CN201010173256A patent/CN101835085A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0727829A2 (en) * | 1993-03-19 | 1996-08-21 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
| CN1791281A (en) * | 2004-12-13 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro condenser microphone chip and its preparing method |
| EP1931173A2 (en) * | 2006-12-06 | 2008-06-11 | Electronics and Telecommunications Research Institute | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same |
| CN101330026A (en) * | 2007-06-21 | 2008-12-24 | 新光电气工业株式会社 | Electronic device and method of manufacturing the same |
| CN101588529A (en) * | 2009-06-30 | 2009-11-25 | 瑞声声学科技(深圳)有限公司 | Silica-based condenser microphone and production method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106063296A (en) * | 2015-01-05 | 2016-10-26 | 歌尔股份有限公司 | Microphone with dustproof through holes |
| WO2021134688A1 (en) * | 2019-12-31 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Method for producing mems drive |
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Application publication date: 20100915 |