CN201699978U - Capacitive miniature silicon microphone - Google Patents
Capacitive miniature silicon microphone Download PDFInfo
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- CN201699978U CN201699978U CN2010201537533U CN201020153753U CN201699978U CN 201699978 U CN201699978 U CN 201699978U CN 2010201537533 U CN2010201537533 U CN 2010201537533U CN 201020153753 U CN201020153753 U CN 201020153753U CN 201699978 U CN201699978 U CN 201699978U
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- vibrating diaphragm
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- material layer
- insulation material
- pole plate
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Abstract
The utility model relates to a capacitive miniature silicon microphone, comprising a substrate, wherein the central area of the substrate is deposited with a membrane; the substrate is further deposited with an insulation material layer, corresponding to a surface provided with the substrate; the insulation material layer covers on the surfaces of the substrate and the membrane and forms a cavity with the membrane; the inner wall of the insulation material layer, corresponding to the membrane, is fixedly connected with a back electrode plate which forms a capacitive structure with the membrane; the outer wall of the insulation material layer, corresponding to the membrane, is provided with a plurality of acoustic holes which are communicated with the cavity formed by the insulation material layer and the membrane; and a acoustic cavity is arranged on the lower part of the substrate corresponding to the membrane, the depth of the acoustic cavity is from the surface on the other end of substrate, correspondingly provided with the membrane, to the membrane. The utility model has low manufacture cost, high yield and simple technological operation and meets the requirements on small size.
Description
Technical field
The utility model relates to a kind of silicon microphone and preparation method thereof, especially a kind of capacitance type minitype silicon microphone, specifically a kind of micro silicon microphone that utilizes the MEMS technology and preparation method thereof.
Background technology
MEMS (Micro-Electro-Mechanical Systems) technology is a new and high technology of high speed development in the past few years, compare with traditional respective devices, the MEMS device all has obvious advantages at aspects such as volume, power consumption, weight, and it adopts advanced semiconductor fabrication process, can realize the batch manufacturing of MEMS device, control production cost that can be fabulous, the consistency of raising device.For present MEMS product, accelerometer, pressure sensor, gyroscope, micro mirror, silicon microphone etc. have all been realized batch process, have all occupied certain share on corresponding market.
Characteristics such as silicon microphone is high temperature resistant, power consumption is little and volume is little, it will be more extensive making it use in association areas such as audio-visual products such as mobile phone, hearing aids, notebook computer, PDA, video camera and national defence, national security.From the prediction in microphone market and development, it is unquestionable that silicon microphone becomes the substitute products of traditional electret microphone, and it provides and has made quite satisfied similar of acoustic engineers even better acoustical behavior.Silicon microphone will become the major product on the microphone market after several years.
In order to develop the microphone of high sensitivity and wide bandwidth, the making of high-performance vibrating diaphragm is most important, and vibrating diaphragm is made the control that subject matter is exactly vibrating diaphragm stress that faces.The making of existing film mainly adopts the method for deposit to obtain, can there be bigger residual stress in the vibrating diaphragm that obtains by deposit, residual stress has considerable influence to the performance of micro silicon microphone, big residual stress can reduce the sensitivity of microphone significantly, compression can also reduce the voltage endurance capability of microphone, can make that microphone can't operate as normal when serious.In addition, the making of back pole plate is also most important, and the rigidity backplane is that silicon microphone has good frequency characteristic and low noise precondition.
Improving the vibrating diaphragm residual stress at present has two kinds of methods usually, and the one, by additional process, with the mode of annealing, this mode requires high to the control of technology, and repeatability is not fine; Another is by structural adjustment, as makes free membrane structure, but the making of this structure can cause the increase of process complexity, may need to add multistep technology, controls vibrating diaphragm.And realize that the rigidity backplane also is the big difficult point of one in the microphone manufacturing process, and also be to have two kinds of main method to solve at present, the one, make thick backplane, but be difficult to obtain the thick backplane of needs by the depositing technics of routine; Also having a kind of method is to improve the rigidity of back pole plate by structural adjustment, but also is the complexity that will increase technology.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of capacitance type minitype silicon microphone is provided, and its low cost of manufacture, rate of finished products height, technological operation are simple and satisfy undersized requirement.
According to the technical scheme that the utility model provides, described capacitance type minitype silicon microphone comprises substrate; The center of described substrate is deposited with vibrating diaphragm; Substrate also is deposited with insulation material layer corresponding to the surface that substrate is set; Described insulation material layer covers the surface of substrate and vibrating diaphragm, and and vibrating diaphragm between form cavity; On insulation material layer and the corresponding inwall of vibrating diaphragm the back pole plate of fixedlying connected is set, described back pole plate and vibrating diaphragm form capacitance structure; On the corresponding outer wall of insulation material layer and vibrating diaphragm the hole is set some, described sound hole is connected with the cavity that insulation material layer, vibrating diaphragm form; Substrate is provided with the operatic tunes corresponding to the bottom that vibrating diaphragm is set, and the degree of depth of the described operatic tunes extends to vibrating diaphragm from substrate corresponding to vibrating diaphragm other end surface is set.
One end of described vibrating diaphragm is provided with the vibrating diaphragm electrode, and described vibrating diaphragm electrode and vibrating diaphragm electrically connect; Described back pole plate is provided with the back pole plate electrode, and described back pole plate electrode and back pole plate electrically connect.Described substrate is provided with line film groove corresponding to the surface of deposit vibrating diaphragm.The material of described insulation material layer comprises silicon nitride and polyimides.Described vibrating diaphragm is provided with etched hole.
Advantage of the present utility model: the diaphragm structure flexible design, can be the line membrane structure, also can be flat membrane structure.Vibrating diaphragm can adopt single polycrystalline silicon material to form by high-temperature annealing process, also can adopt insulation support layer, insulating barrier and conductive layer to complement each other to form, and reaches the purpose that reduces residual stress.By the setting of sacrifice layer and insulation material layer, the distance between back pole plate and vibrating diaphragm is controlled, can satisfy stronger rigidity requirement, can reduce parasitic capacitance again.Prepare the method rate of finished products height of capacitance type minitype silicon microphone, cost is low, and technology realizes easily, can satisfy the small size requirement, and is fit to produce in enormous quantities.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the structural representation that the utlity model has etched hole.
Fig. 3 is a kind of structural representation of vibrating diaphragm.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As Fig. 1～shown in Figure 3: the utility model comprises substrate 1, line film groove 2, insulation support layer 3, insulating barrier 4, vibrating diaphragm 5, sacrifice layer 6, vibrating diaphragm electrode 7, back pole plate 8, insulation material layer 9, sound hole 10, the operatic tunes 11, movable beam 12, etched hole 13 and metal hand-hole 14
As depicted in figs. 1 and 2: be concaved with line film groove 2 on the surface of described substrate 1, substrate 1 is corresponding to the surface deposition vibrating diaphragm 5 that line film groove 2 is set.Described vibrating diaphragm 5 is that conductive polycrystalline silicon or insulation support layer 3, insulating barrier 4 and conductive layer form composite construction.When vibrating diaphragm 5 is an insulation support layer 3, insulating barrier 4 when forming composite construction with conductive layer, insulation support layer 3 is deposited on substrate 1 corresponding to the surface that line film groove 2 is set; Deposition insulating layer 4 and conductive layer successively again on the described insulation support layer 3; By cooperatively interacting of insulation support layer 3 and insulating barrier 4, can reduce the residual stress of vibrating diaphragm 5.Vibrating diaphragm 5 also can adopt polycrystalline silicon material, but need carry out high annealing to the conductive polycrystalline silicon of deposit.Described vibrating diaphragm 5 is positioned at the center of substrate 1; When vibrating diaphragm 5 was the composite construction of insulation support layer 3, insulating barrier 4 and conductive layer formation, by optionally sheltering and the etching composite construction, the vibrating diaphragm 5 that insulation support layer 3, insulating barrier 4 and conductive layer are formed was positioned at the center of substrate 1.
Also be provided with insulation material layer 9 on the described substrate 1; Described insulation material layer 9 covers the surface of substrate 1, and forms cavity with vibrating diaphragm 5.The material of described insulation material layer 9 is other materials such as silicon nitride or polyimides.On insulation material layer 9 and the vibrating diaphragm 5 corresponding inwalls back pole plate 8 is set, described back pole plate 8 has certain distance with vibrating diaphragm 5, forms the top crown and the bottom crown of electric capacity respectively, and back pole plate 8 constitutes capacitance structures with vibrating diaphragm 5.Described insulation material layer 9 is provided with metal hand-hole 14 with the corresponding surface of vibrating diaphragm 5 one ends, and described metal hand-hole 14 extend into the end of vibrating diaphragm 5 from insulation material layer 9 surfaces, thereby insulation material layer 9 is connected with the outside with the cavity that vibrating diaphragm 5 forms.Vibrating diaphragm 5 is deposited with vibrating diaphragm electrode 7 corresponding to the end that metal hand-hole 14 is set, and described vibrating diaphragm electrode 7 electrically connects with vibrating diaphragm 5.Described back pole plate 8 is provided with the back pole plate electrode, and described back pole plate electrode and back pole plate 8 electrically connect.
The top of back pole plate 8 is provided with hole 10, and described sound hole 10 is the array setting.Described sound hole 10 is connected with the cavity that insulation material layer 9, vibrating diaphragm 5 form.Array structure is lined up by vibrating diaphragm 5 and back pole plate 8 shapes in sound hole 10, can be used to form the acoustic filter that filters in certain frequency or the certain frequency scope, propagates acoustic pressure, regulates the damping between vibrating diaphragm 5 and the back pole plate 8, reduces noise; Described sound hole 10 can be arbitrary shapes such as circle, square, ellipse, and difform sound hole has different performance impacts, as circular sound hole, helps discharging air pressure, more effectively reduces press-filming damping, but can increase the complexity that technology is made; Square sound pore volume is easily made, but can cause problem of stress concentration, also can influence microphone property.
Fig. 3 is the structural representation of vibrating diaphragm 5.As shown in Figure 3, insulation support layer 3, insulating barrier 4 and conductive layer form vibrating diaphragm 5.Line film groove 2 is arranged on the inner ring that insulation support layer 3, insulating barrier 4 and conductive layer form vibrating diaphragm 5.Described vibrating diaphragm 5 is provided with etched hole 13, and described etched hole 13 is evenly arranged on the vibrating diaphragm 5.In order to improve the sensitivity of microphone, also be provided with movable beam 12 on described vibrating diaphragm 5 side faces.
As depicted in figs. 1 and 2, during use, the vibrating diaphragm electrode 7 on the vibrating diaphragm 5, the back pole plate electrode on the back pole plate 8 are connected with external detection equipment respectively, 8 of described vibrating diaphragm 5 and back pole plates form capacitance structure.When external voice from the operatic tunes 11 or sound hole 10 when entering, the sound that enters the operatic tunes 11 or sound hole 10 can produce active forces to vibrating diaphragm 5; The surface of vibrating diaphragm 5 is subjected to behind the active force deformation taking place accordingly.When deformation took place vibrating diaphragm 5, corresponding variation also can take place with the capacitance structure that back pole plate 8 forms in vibrating diaphragm 5; By detecting the variation of vibrating diaphragm electrode 7 and back pole plate electrode output, detect corresponding voice signal.
The utility model vibrating diaphragm 5 structural designs are flexible, can be the line membrane structure, also can be flat membrane structure.Vibrating diaphragm 5 can adopt single polycrystalline silicon material to form by high-temperature annealing process, also can adopt insulation support layer 3, insulating barrier 4 to complement each other to form with conductive layer, reaches the purpose that reduces residual stress.By the setting of sacrifice layer 6 with insulation material layer 9, the distance that back pole plate 8 and vibrating diaphragm are 5 is controlled, can satisfy stronger rigidity requirement, can reduce parasitic capacitance again.Prepare the method rate of finished products height of capacitance type minitype silicon microphone, cost is low, and technology realizes easily, can satisfy the small size requirement, and is fit to produce in enormous quantities.
Claims (5)
1. a capacitance type minitype silicon microphone comprises substrate (1); It is characterized in that: the center of described substrate (1) is deposited with vibrating diaphragm (5); Substrate (1) also is deposited with insulation material layer (9) corresponding to the surface that substrate (1) is set; Described insulation material layer (9) covers the surface of substrate (1) and vibrating diaphragm (5), and and vibrating diaphragm (5) between form cavity; On insulation material layer (9) and the corresponding inwall of vibrating diaphragm (5) back pole plate (8) of fixedlying connected is set, described back pole plate (8) forms capacitance structure with vibrating diaphragm (5); On insulation material layer (9) and the corresponding outer wall of vibrating diaphragm (5) some holes (10) are set, described sound hole (10) is connected with the cavity that insulation material layer (9), vibrating diaphragm (5) form; Substrate (1) is provided with the operatic tunes (11) corresponding to the bottom that vibrating diaphragm (5) is set, and the degree of depth of the described operatic tunes (11) extends to vibrating diaphragm (5) from substrate (1) corresponding to vibrating diaphragm (5) other end surface is set.
2. capacitance type minitype silicon microphone according to claim 1 is characterized in that: an end of described vibrating diaphragm (5) is provided with vibrating diaphragm electrode (7), and described vibrating diaphragm electrode (7) electrically connects with vibrating diaphragm (5); Described back pole plate (8) is provided with the back pole plate electrode, and described back pole plate electrode and back pole plate (8) electrically connect.
3. capacitance type minitype silicon microphone according to claim 1 is characterized in that: described substrate (1) is provided with line film groove (2) corresponding to the surface of deposit vibrating diaphragm (5).
4. capacitance type minitype silicon microphone according to claim 1 is characterized in that: the material of described insulation material layer (9) comprises silicon nitride or polyimides.
5. capacitance type minitype silicon microphone according to claim 1 is characterized in that: described vibrating diaphragm (5) is provided with etched hole (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201537533U CN201699978U (en) | 2010-04-09 | 2010-04-09 | Capacitive miniature silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201537533U CN201699978U (en) | 2010-04-09 | 2010-04-09 | Capacitive miniature silicon microphone |
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|---|---|
| CN201699978U true CN201699978U (en) | 2011-01-05 |
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| CN2010201537533U Expired - Fee Related CN201699978U (en) | 2010-04-09 | 2010-04-09 | Capacitive miniature silicon microphone |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101835079A (en) * | 2010-04-09 | 2010-09-15 | 无锡芯感智半导体有限公司 | Capacitance type minitype silicon microphone and preparation method thereof |
| CN107529121A (en) * | 2017-09-28 | 2017-12-29 | 歌尔股份有限公司 | Electret Condencer Microphone and electronic installation |
| CN108235203A (en) * | 2017-12-11 | 2018-06-29 | 钰太芯微电子科技（上海）有限公司 | A kind of method and microphone apparatus of adaptive tracing bias voltage |
-
2010
- 2010-04-09 CN CN2010201537533U patent/CN201699978U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101835079A (en) * | 2010-04-09 | 2010-09-15 | 无锡芯感智半导体有限公司 | Capacitance type minitype silicon microphone and preparation method thereof |
| CN101835079B (en) * | 2010-04-09 | 2013-01-02 | 无锡芯感智半导体有限公司 | Capacitance type minitype silicon microphone and preparation method thereof |
| CN107529121A (en) * | 2017-09-28 | 2017-12-29 | 歌尔股份有限公司 | Electret Condencer Microphone and electronic installation |
| WO2019061618A1 (en) * | 2017-09-28 | 2019-04-04 | 歌尔股份有限公司 | Condenser microphone and electronic device |
| KR102065290B1 (en) | 2017-09-28 | 2020-01-10 | 고어텍 인크 | Condenser Microphone and Electronics |
| US10932064B2 (en) | 2017-09-28 | 2021-02-23 | Weifang Goertek Microelectronics Co., Ltd | Condenser microphone and electronic device |
| CN108235203A (en) * | 2017-12-11 | 2018-06-29 | 钰太芯微电子科技（上海）有限公司 | A kind of method and microphone apparatus of adaptive tracing bias voltage |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110105 Termination date: 20130409 |