CN103402162A - Capacitive silicon microphone provided with vibrating membrane with concave-convex structure, and preparation method thereof - Google Patents
Capacitive silicon microphone provided with vibrating membrane with concave-convex structure, and preparation method thereof Download PDFInfo
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- CN103402162A CN103402162A CN2013103124533A CN201310312453A CN103402162A CN 103402162 A CN103402162 A CN 103402162A CN 2013103124533 A CN2013103124533 A CN 2013103124533A CN 201310312453 A CN201310312453 A CN 201310312453A CN 103402162 A CN103402162 A CN 103402162A
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Abstract
The invention relates to a capacitive silicon microphone which is formed on a circuit area on a semiconductor substrate, and comprises a passivation layer, a dielectric layer, a device group, an air gap, an air cavity, at least one vent hole and a metal layer, wherein the passivation layer is a surface layer of the circuit area; the dielectric layer is arranged between the passivation layer and the substrate; the device group is embedded at the bottom of the passivation layer and comprises a first device and a second device; the air gap is arranged above the passivation layer; the air cavity is formed in the substrate; the at least one vent hole passes through the passivation layer and the dielectric layer downwards from the circuit area where the device group is not laid, and is respectively communicated with the air cavity and the air gap; the metal layer comprises a first part and a second part which are connected with each other, wherein the first part covers the air gap, and the second part passes through the passivation layer and is connected with the second device; the upper surface of the first part comprises at least one release hole and at least one concave part, wherein the position of each concave part corresponds to that of each vent hole. The capacitive silicon microphone can effectively improve the uniformity of the stress in a vibrating membrane of the silicon microphone, and can improve the sensitivity of the silicon microphone.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, more particularly, relate to a kind of capacitance silicon microphone with concaveconvex structure vibrating membrane and preparation method thereof.
Background technology
The operation principle of electret microphone is by air, to cause that the vibrations of electret vibration film produce displacement with voice, thereby make these two the interelectrode distances of metal level on back electrode and electret change, electric capacity also changes thereupon, because the charge number on electret remains constant, by Q=CU, can show that the voltage U that will cause the capacitor two ends when C changes changes, thereby output electrical signals, realize that acoustical signal arrives the conversion of the signal of telecommunication.
The key element of acoustic-electric conversion is the electret vibrating membrane.And traditional electret capacitor microphone has approached the limit on volume-diminished, further dwindling of its technology and ceiling structure volume processed, the microphone structure that market in urgent need is new and technology, come satisfying the market to the demand on cost, performance, ease for use and design freedom.
At present, the MEMS microphone has been widely used in microphone and has manufactured field, it is by with integrated circuit, manufacturing the microphone of compatible surface (as silicon substrate) processing or Bulk micro machining manufacture, owing to can utilizing the CMOS technology that continues micro, the MEMS microphone can be done very littlely, thereby can be widely applied in the portable equipments such as mobile phone, notebook computer, video camera.The operation principle of MEMS microphone and traditional electret capacitor microphone (ECM) are similar, by the variable in distance between vibrating membrane and substrate, cause the variation of capacitor voltage at both ends, thereby realize the acoustic-electric transfer process.
In actual production, polysilicon membrane usually by low-pressure chemical vapor deposition (LPCVD) generate, as the vibrating membrane of silicon microphone, between the zones of different of this film, can there is internal stress gradient difference, and the internal stress of the silicon microphone chip vibrating membrane of each production batch also has notable difference, and then has influence on the consistency of device performance and technique; Traditional vibrating membrane structure is smooth planar structure simultaneously, and under the effect of certain acoustic pressure, its mechanical oscillation scope is less, and sensitivity is lower.
Therefore, the industry expectation obtains a kind of capacitance silicon microphone structure, and it can improve the uniformity of vibrating membrane internal stress at least, realizes the consistency of production technology.
Summary of the invention
The object of the present invention is to provide a kind of capacitance silicon microphone, be used to the uniformity of improving the vibrating membrane internal stress, the consistency that realizes production technology, and can improve sensitivity of microphone.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of capacitance silicon microphone, be formed on Semiconductor substrate one circuit region, comprising: a passivation layer, and it is the circuit region superficial layer; One dielectric layer, be arranged between passivation layer and substrate; One device group, be embedded in the passivation layer bottom, and it comprises the first device and the second device, and the first device is electric capacity first utmost point of capacitance silicon microphone; One air-gap, be positioned at the passivation layer top, for the dielectric as the capacitance silicon microphone; One air cavity, be formed in substrate; And at least one air vent hole, it connects passivation layer and dielectric layer downwards from the circuit region of not laying the device group, respectively with air cavity, air-gap conducting; One metal level, for electric capacity second utmost point as the capacitance silicon microphone, comprise interconnective First and second one, First coats air-gap from top, second one connects passivation layer and is connected with the second device, the First upper surface comprises: at least one release aperture is communicated with respectively capacitance silicon microphone outside and air-gap; At least one recess is corresponding one by one with the position of air vent hole.
Preferably, the recess flare, its sidewall is curved, to the recess axis, approaches.
Another object of the present invention is to provide a kind of preparation method of capacitance silicon microphone, the capacitance silicon microphone for preparing by the method has process consistency preferably, and sensitivity is higher.
For achieving the above object, a kind of technical scheme of the present invention is as follows:
A kind of method for preparing the capacitance silicon microphone, comprise the steps: a), provide semi-conductive substrate, on substrate, form a circuit region, circuit region comprises a passivation layer, a device group and a dielectric layer of vertical distribution, passivation layer is the circuit region superficial layer, and dielectric layer is vertically installed in the passivation layer below, and the device group is embedded in the passivation layer bottom, it comprises the first device and the second device, and the first device forms electric capacity first utmost point of capacitance silicon microphone; B), with patterning method, at circuit region, form at least one air vent hole, air vent hole connects passivation layer and dielectric layer downwards from the circuit region of not laying the device group, stops at substrate; C), at circuit region uniform deposition one sacrifice layer; D), to the sacrifice layer patterning to define the air-gap zone; E), on the air-gap zone uniform deposition one metal level, and metal level is connected with the second device, to form electric capacity second utmost point of capacitance silicon microphone; F), on metal level, form at least one release aperture; G), the etched circuit zone, remove sacrifice layer to form air-gap; H), from air vent hole, be etched down in substrate and form air cavity.
For achieving the above object, the another technical scheme of the present invention is as follows:
A kind of method for preparing the capacitance silicon microphone, comprise the steps: a), provide semi-conductive substrate, on substrate, form a circuit region, circuit region comprises a passivation layer, a device group and a dielectric layer of vertical distribution, passivation layer is the circuit region superficial layer, and dielectric layer is vertically installed in the passivation layer below, and the device group is embedded in the passivation layer bottom, it comprises the first device and the second device, and the first device forms electric capacity first utmost point of capacitance silicon microphone; B), with patterning method, at circuit region, form at least one air vent hole, air vent hole connects passivation layer and dielectric layer downwards from the circuit region of not laying the device group, stops at substrate; C), at circuit region uniform deposition one sacrifice layer; D), to the sacrifice layer patterning to define the air-gap zone; E), on the air-gap zone uniform deposition one metal level, and metal level is connected with the second device, to form electric capacity second utmost point of capacitance silicon microphone; F), on metal level, form at least one release aperture; G), from the substrate back, upwards be etched to dielectric layer or sacrifice layer and substrate contact face and form air cavity; H), the etched circuit zone, remove sacrifice layer to form air-gap, air-gap is by air vent hole and air cavity conducting.
Capacitance silicon microphone provided by the invention and preparation method thereof, by uniform deposition sacrifice layer and metal level again after forming air vent hole, be formed self-aligned a kind of vibrating membrane of concaveconvex structure, improved the non-uniformity problem of the internal stress of silicon microphone vibrating membrane, and effectively improved the problem of diaphragm mechanical tolerance limit, thereby promoted the mechanical performance of vibrating membrane, the sensitivity that has improved silicon microphone, and between each production batch, easily realized the consistency of technique.This preparation method is easy to realize, can in the semiconductor machining industry, be applicable.
The accompanying drawing explanation
Fig. 1 illustrates the capacitance silicon microphone structure schematic diagram of first embodiment of the invention;
Fig. 2 illustrates the capacitance silicon microphone manufacturing method schematic flow sheet of second embodiment of the invention;
Fig. 3 A-3E illustrates silicon microphone structural representation in each step of capacitance silicon microphone manufacturing method of second embodiment of the invention;
Fig. 4 illustrates the capacitance silicon microphone structure schematic diagram of third embodiment of the invention;
Fig. 5 illustrates the capacitance silicon microphone manufacturing method schematic flow sheet of fourth embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
As shown in Figure 1, first embodiment of the invention provides a kind of capacitance silicon microphone, is formed on a smooth circuit region 10 of substrate, comprising: a passivation layer 102, and it is circuit region 10 superficial layers; One dielectric layer 101, be arranged between passivation layer 102 and substrate; One device group, be embedded in passivation layer 102 bottoms, and it comprises that the first device 1031 and the second device 1032, the first devices 1031 are electric capacity first utmost point of capacitance silicon microphone; One air-gap 107, be positioned at passivation layer 102 tops, for the dielectric as the capacitance silicon microphone; One air cavity 108, be formed in substrate; And a plurality of air vent holes 104, it connects passivation layer 102 and dielectric layer 101 downwards from the circuit region of not laying the device group, respectively with air cavity 108, air-gap 107 conductings; One metal level 106, for electric capacity second utmost point as the capacitance silicon microphone, comprise interconnective First and second one, First coats air-gap 107 from top, second one connects passivation layer 102 and is connected with the second device 1032, the First upper surface comprises: a plurality of release aperture 1062 are communicated with respectively capacitance silicon microphone outside and air-gap 107; A plurality of recesses 1061, recess 1061 is corresponding one by one with the position of air vent hole 104.
Particularly, recess 1061 can separate setting with release aperture 1062, also can be wholely set (being that release aperture 1062 is positioned on recess 1061); Release aperture 1062 also can be arranged at the optional position of metal level 106 Firsts.
Wherein, air-gap 107 is as the dielectric of capacitance silicon microphone, and the air pressure in air cavity 108 is for defining and characterize the air pressure inside corresponding to capacitance silicon microphone external pressure.The first device 1031 is electric capacity first utmost point of capacitance silicon microphone, metal level 106 is electric capacity second utmost point of capacitance silicon microphone, and as the vibrating membrane of silicon microphone, the first device 1031 and metal level 106 and as together with the air-gap 107 of dielectric between the two as a plane-parallel capacitor, together with other circuit, form whole capacitance silicon microphone circuit.
When voice signal produces draught head in the vibrating membrane both sides, vibrating membrane will produce vibration, and the voltage at electric capacity two ends is changed, thereby realize changing voice signal into the signal of telecommunication.
According to the above embodiment of the present invention, metal level 106 Firsts coat air-gap 107 from top, and its upper surface is provided with a plurality of release aperture 1062 and a plurality of recess 1061.Release aperture 1062 is filled in the sacrificial layer material of air-gap for volatilization in subsequent technique.The setting of recess 1061, improved the uniformity of silicon microphone vibrating membrane internal stress, improved simultaneously the consistency of silicon microphone production technology, and with respect to the planar structure vibrating membrane, silicon microphone sensitivity has significantly been promoted.
Further, recess 1061 flares, recess 1061 sidewalls are curved, to the axis of recess 1061, approach.That is, recess 1061 sink to bottom gently from edge, makes the internal stress of the vibrating membrane of metal level 106 formation obviously reduce.
Further, the sidewall that air vent hole 104 and air-gap 107 are connected to form is hierarchic structure, thereby in subsequent technique after uniform deposition sacrifice layer and metal level, be more convenient for forming vibrating membrane multi-level, concaveconvex structure, make the internal stress of vibrating membrane further even, and significantly promote sensitivity of microphone.
Further, recess 1061 bottom surfaces are higher than passivation layer 102 end faces of air vent hole 104 peripheries.
As shown in Fig. 2 and Fig. 3 A-3E, second embodiment of the invention provides a kind of preparation method of capacitance silicon microphone, comprises following each step:
Step S10 a: substrate is provided, forms a smooth circuit region 10 on substrate, be used to making the silicon microphone circuit.
particularly, on circuit region 10, vertical distribution has a passivation layer 102, one device group and a dielectric layer 101, passivation layer 102 is the superficial layer of circuit region, dielectric layer 101 is vertically installed in passivation layer 102 belows, the device group is embedded in the passivation layer bottom, be positioned on dielectric layer, it comprises the first device 1031 and the second device 1032, the first device 1031 and the second device 1032 are respectively an element of silicon microphone circuit, the first device 1031 is for forming an electrode of capacitance silicon microphone at subsequent technique, the second device 1032 is connected with another electrode (forming in subsequent technique) of capacitance silicon microphone, thereby form a plane-parallel capacitor, and together with other partial circuits, form whole silicon microphone circuit.The silicon microphone structure as shown in Figure 3A at this moment.
Step S11: form at least one air vent hole 104 at circuit region 10.
Because air vent hole 104 has formed, circuit region 10 surfaces have had concavo-convex pattern, after this circuit region surface uniform deposition sacrifice layer 105, sacrifice layer 105 upper surfaces also correspondingly present concavo-convex pattern, its upper surface comprises a plurality of recesses 1051, and recess 1051 is corresponding one by one with the position of air vent hole 104.
Step S13: sacrifice layer 105 patternings are defined to the air-gap zone.
Particularly, according to the silicon microphone air gap size of technological requirement, the sacrifice layer 105 on circuit region 10 is carried out to patterning, define an air-gap zone, and the sacrifice layer outside this air-gap zone is disposed from circuit region 10 surfaces.The silicon microphone structure as shown in Figure 3 C at this moment.
Step S14: uniform deposition one metal level 106 on the air-gap zone, and 106 1 ones of metal levels are connected with the second device 1032.
Particularly, metal level 106 is deposited on sacrifice layer 105 tops, covers the upper surface of circuit region 10, and one section coats the sacrifice layer 105 in the air-gap zone from top.Metal level 106 another ones, with after the second device 1032 is connected, form electric capacity second utmost point of capacitance silicon microphone, are also the vibrating membranes of silicon microphone simultaneously.
Because sacrifice layer 105 presents concavo-convex pattern, metal level 106 at its surface uniform deposition also presents concavo-convex pattern, it comprises a plurality of recesses 1061, and recess 1061 is corresponding one by one with the position of the recess 1051 of sacrifice layer 105, and is also corresponding one by one with the position of air vent hole 104.The silicon microphone structure as shown in Figure 3 D at this moment.
Step S15: form at least one release aperture 1062 on metal level 106.
Particularly, release aperture 1062 is separated setting with recess 1061, and for the sacrificial layer material in preparation technology volatilization or etching are filled in air-gap, it connects metal level 106, stops at sacrifice layer 105 upper surfaces.
Step S16: remove remaining sacrifice layer 105 to form air-gap 107.
Particularly, in this step S16, adopt the isotropic etching material, by release aperture 1062, remove remaining sacrifice layer 105 to be completed into air-gap 107, this moment, the silicon microphone structure was as shown in Fig. 3 E.
Step S17: be etched down in substrate and form air cavity 108 from air vent hole.
On the basis of step S16, further be etched down in substrate and form a circle basin shape air cavity 108.When there is voice signal the silicon microphone outside, air cavity 108 air pressure inside and silicon microphone external pressure poor, to cause the vibration vibration of membrane that is formed by metal level 106, thereby change the capacitance of plane-parallel capacitor, realize the conversion of voice signal to voltage signal.
After this, namely form capacitance silicon microphone structure as shown in Figure 1.
Further, sacrifice layer 105 materials are amorphous silicon or low temperature polycrystalline silicon.
Further, the etching material of etched circuit zone 10 employings is XeF
2, SF
6Deng.
Further, metal level 106 materials are Al, AlSi or AlSiCu, or their composition.
Further, step S15 specifically comprises: provide a mask, to comprise BCl
3At interior etching material, etching sheet metal 106 is to form release aperture 1062.
The capacitance silicon microphone for preparing formation by this embodiment, its upper surface have a plurality of recesses 1061, this Structure Improvement the uniformity of silicon microphone vibrating membrane internal stress.The capacitance silicon microphone manufacturing method that this embodiment provides, be conducive to realize better the consistency of technique in preparation technology, and can promote sensitivity of microphone, and the method is easy to realize, production cost is lower.
As shown in Figure 4, the capacitance silicon microphone that third embodiment of the invention provides, be formed on a smooth circuit region 10 of substrate, comprise: dielectric layer 101, passivation layer 102, the first device 1031 that is embedded in passivation layer 102 bottoms, the second device 1032, be positioned at air-gap 107 on passivation layer 102, as the metal level 106 of capacitance silicon vibration membrane for microphone and the air cavity 108 that is formed at the substrate back.Air cavity 108 is communicated with air-gap 107 by a plurality of air vent holes 104, and air-gap 107 is communicated with silicon microphone is outside by a plurality of release aperture 1062 of metal level 106 upper surfaces.Except air cavity 108, remaining part structure and function all with first embodiment of the invention in identical.
Wherein, metal level 106 Firsts coat air-gap 107 from top, and 106 second ones of metal levels connect passivation layer 102 and are connected with the second device 1032; Coat this First metal level upper surface of air-gap 107 except comprising a plurality of release aperture 1062, also comprise a plurality of recesses 1061.
The internal stress that is arranged so that the silicon microphone vibrating membrane that metal level 106 forms of recess 1061 is more even, and makes the mechanical tolerance of vibrating membrane improve, and improves its sensitivity.
Further, the sidewall that air vent hole 104 and air-gap 107 are connected to form is hierarchic structure, in subsequent technique, after uniform deposition sacrifice layer and metal level, is more convenient for forming vibrating membrane multi-level, concaveconvex structure.
Further, recess 1061 flares, recess 1061 sidewalls are curved, to the axis of recess 1061, approach.
Further, recess 1061 bottom surfaces are higher than passivation layer 102 end faces of air vent hole 104 peripheries.
As shown in Figure 5, and in conjunction with Fig. 4, fourth embodiment of the invention provides a kind of preparation method of capacitance silicon microphone, and the capacitance silicon microphone for the preparation of above-mentioned the 3rd embodiment provides comprises following each step:
Step S20 a: substrate is provided, forms a smooth circuit region 10 on substrate, be used to making the silicon microphone circuit.
On circuit region 10, vertical distribution has a passivation layer 102, a device group and a dielectric layer 101, passivation layer 102 is the superficial layer of circuit region, dielectric layer 101 is vertically installed in passivation layer 102 belows, the device group is embedded in the passivation layer bottom, is positioned on dielectric layer, it comprises that the first device 2031 and the second device 1032, the first devices 1031 form an electrode of capacitance silicon microphone, the second device 1032 is connected with another electrode (metal level 106 that namely forms in step S24) of capacitance silicon microphone.
Step S21: form at least one air vent hole 104 at circuit region 10.
Step S22: at circuit region 10 uniform deposition one sacrifice layers (not shown in Fig. 4).
Due to the setting of air vent hole 104 and evenly carrying out of deposition, the sacrifice layer upper surface has a plurality of recesses (not shown in Fig. 4), and these recesses are corresponding one by one with the position of air vent hole 104.Sacrificial layer material is amorphous silicon or low temperature polycrystalline silicon.
Step S23: the sacrifice layer patterning is defined to the air-gap zone.
In this step, the sacrifice layer outside this air-gap zone is disposed from circuit region 10 surfaces.
Step S24: uniform deposition one metal level 106 on the air-gap zone, and 106 1 ones of metal levels are connected with the second device 1032.
Particularly, metal level 106, with after the second device 1032 is connected, forms electric capacity second utmost point of capacitance silicon microphone.Metal level 106 as the vibrating membrane of silicon microphone, its upper surface has a plurality of recesses 1061; Recess 1061 is corresponding one by one with the position of sacrifice layer upper surface recess, thereby corresponding one by one with the position of air vent hole 104.The material of metal level 106 is aluminium.
Step S25: form at least one release aperture 1062 on metal level 106.
Provide a mask, to comprise BCl
3At interior etching material, etching sheet metal 106 to be to form a plurality of release aperture 1062, and release aperture 1062 connects metal levels 106, stops at the sacrifice layer upper surface, for the sacrificial layer material in preparation technology's volatilization or etching are filled in air-gap 107.
Step S26: the etching that makes progress from the substrate back forms air cavity 108.
Particularly, from the substrate back, carry out anisotropic etching, to dielectric layer 101, stop during with the substrate contact face, or stop during to sacrifice layer and substrate contact face, the etching material is for example SF
6Deng.
Step S27: etched circuit zone 10, remove remaining sacrifice layer to form air-gap 107.
From substrate top surface or lower surface or upper and lower surface in the same time etching off except remaining sacrificial layer material, form capacitance silicon microphone two interelectrode dielectrics, namely air-gap 107.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure done of every utilization specification of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (9)
1. a capacitance silicon microphone, be formed on Semiconductor substrate one circuit region, comprising:
One passivation layer, it is described circuit region superficial layer;
One dielectric layer, be arranged between described passivation layer and described substrate;
One device group, be embedded in described passivation layer bottom, and it comprises the first device and the second device, electric capacity first utmost point that described the first device is described capacitance silicon microphone;
One air-gap, be positioned at described passivation layer top, for the dielectric as described capacitance silicon microphone;
One air cavity, be formed in described substrate; And
At least one air vent hole, it connects described passivation layer and described dielectric layer downwards from the circuit region of not laying described device group, respectively with described air cavity, described air-gap conducting;
One metal level, for as electric capacity second utmost point of described capacitance silicon microphone, comprise interconnective First with second one, described First is from the described air-gap of top coating, described second described passivation layer of perforation is connected with described the second device, and described First upper surface comprises:
At least one release aperture, be communicated with respectively described capacitance silicon microphone outside and described air-gap;
At least one recess is corresponding one by one with the position of described air vent hole.
2. capacitance silicon microphone as claimed in claim 1, is characterized in that, described recess flare, and its sidewall is curved, to described recess axis, approaches.
3. capacitance silicon microphone as described as any one in claim 1 to 2, is characterized in that, described recess is a plurality of, measure-alike, is uniformly distributed in described metal level First upper surface.
4. one kind prepares the method for capacitance silicon microphone as claimed in claim 1, comprises the steps:
A), provide semi-conductive substrate, on described substrate, form a circuit region, described circuit region comprises a passivation layer, a device group and a dielectric layer of vertical distribution, described passivation layer is described circuit region superficial layer, described dielectric layer is vertically installed in described passivation layer below, described device group is embedded in described passivation layer bottom, and it comprises the first device and the second device, and described the first device forms electric capacity first utmost point of described capacitance silicon microphone;
B), with patterning method, at described circuit region, form at least one air vent hole, described air vent hole connects described passivation layer and described dielectric layer downwards from the circuit region of not laying described device group, stops at described substrate;
C), at described circuit region uniform deposition one sacrifice layer;
D), to described sacrifice layer patterning to define the air-gap zone;
E), on described air-gap zone uniform deposition one metal level, and described metal level is connected with described the second device, with electric capacity second utmost point that forms described capacitance silicon microphone;
F), on described metal level, form at least one release aperture;
G), the described circuit region of etching, remove described sacrifice layer to form described air-gap;
H), from described air vent hole, be etched down in substrate and form described air cavity.
5. one kind prepares the method for capacitance silicon microphone as claimed in claim 1, comprises the steps:
A), provide semi-conductive substrate, on described substrate, form a circuit region, described circuit region comprises a passivation layer, a device group and a dielectric layer of vertical distribution, described passivation layer is described circuit region superficial layer, described dielectric layer is vertically installed in described passivation layer below, described device group is embedded in described passivation layer bottom, and it comprises the first device and the second device, and described the first device forms electric capacity first utmost point of described capacitance silicon microphone;
B), with patterning method, at described circuit region, form at least one air vent hole, described air vent hole connects described passivation layer and described dielectric layer downwards from the circuit region of not laying described device group, stops at described substrate;
C), at described circuit region uniform deposition one sacrifice layer;
D), to described sacrifice layer patterning to define the air-gap zone;
E), on described air-gap zone uniform deposition one metal level, and described metal level is connected with described the second device, with electric capacity second utmost point that forms described capacitance silicon microphone;
F), on described metal level, form at least one release aperture;
G), from described substrate back, upwards be etched to described dielectric layer or sacrifice layer and described substrate contact face and form described air cavity;
H), the described circuit region of etching, remove described sacrifice layer to form described air-gap, described air-gap is by described air vent hole and described air cavity conducting.
6. method as described as claim 4 or 5, is characterized in that, described sacrificial layer material is amorphous silicon or low temperature polycrystalline silicon.
7. method as described as claim 4 or 5, is characterized in that, the etching material that the described circuit region of etching adopts is XeF
2, SF
6Deng etching gas.
8. method as described as claim 4 or 5, is characterized in that, described metal layer material be in following material any or appoint multiple:
Al；
AlSi; And
AlSiCu。
9. method as described as claim 4 or 5, is characterized in that, described step f) specifically comprise: a mask is provided, and the described metal level of etching is to form described release aperture, and wherein, the etching material comprises BCl
3.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103686569A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone with supporting posts arranged on lower electrodes and preparation method thereof |
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN105323686A (en) * | 2014-06-30 | 2016-02-10 | 上海丽恒光微电子科技有限公司 | MEMS microphone and manufacturing method therefor |
| CN105516879B (en) * | 2015-11-30 | 2018-11-09 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone manufacturing method |
| CN108996466A (en) * | 2017-06-07 | 2018-12-14 | 中芯国际集成电路制造（天津）有限公司 | MEMS device and forming method thereof |
| CN112678764A (en) * | 2021-03-15 | 2021-04-20 | 山东新港电子科技有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
| CN112995869A (en) * | 2021-02-23 | 2021-06-18 | 歌尔微电子股份有限公司 | MEMS chip, manufacturing method thereof, MEMS microphone module and electronic equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787694A (en) * | 2004-12-10 | 2006-06-14 | 美律实业股份有限公司 | Mfg. method for silicon crystal microphone |
| US20070261910A1 (en) * | 2004-11-04 | 2007-11-15 | Takashi Kasai | Capacitive Vibration Sensor and Method for Manufacturing Same |
| TW200940438A (en) * | 2008-01-08 | 2009-10-01 | Bosch Gmbh Robert | Protection system and method for separating MEMS structures |
| CN101572850A (en) * | 2008-04-11 | 2009-11-04 | 王文 | Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof |
| US20120187077A1 (en) * | 2008-12-22 | 2012-07-26 | Electronics And Telecommunications Research Institute | Micro-electromechanical systems (mems) microphone and method of manufacturing the same |
| CN102826502A (en) * | 2011-06-16 | 2012-12-19 | 英飞凌科技股份有限公司 | MEMS devices and methods of fabrication thereof |
-
2013
- 2013-07-23 CN CN2013103124533A patent/CN103402162A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070261910A1 (en) * | 2004-11-04 | 2007-11-15 | Takashi Kasai | Capacitive Vibration Sensor and Method for Manufacturing Same |
| CN1787694A (en) * | 2004-12-10 | 2006-06-14 | 美律实业股份有限公司 | Mfg. method for silicon crystal microphone |
| TW200940438A (en) * | 2008-01-08 | 2009-10-01 | Bosch Gmbh Robert | Protection system and method for separating MEMS structures |
| CN101572850A (en) * | 2008-04-11 | 2009-11-04 | 王文 | Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof |
| US20120187077A1 (en) * | 2008-12-22 | 2012-07-26 | Electronics And Telecommunications Research Institute | Micro-electromechanical systems (mems) microphone and method of manufacturing the same |
| CN102826502A (en) * | 2011-06-16 | 2012-12-19 | 英飞凌科技股份有限公司 | MEMS devices and methods of fabrication thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103686569A (en) * | 2013-12-31 | 2014-03-26 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone with supporting posts arranged on lower electrodes and preparation method thereof |
| CN105323686A (en) * | 2014-06-30 | 2016-02-10 | 上海丽恒光微电子科技有限公司 | MEMS microphone and manufacturing method therefor |
| CN105323686B (en) * | 2014-06-30 | 2018-10-16 | 上海丽恒光微电子科技有限公司 | Micro-electro-mechanical microphone and its manufacturing method |
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN104507014B (en) * | 2014-12-26 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane |
| CN105516879B (en) * | 2015-11-30 | 2018-11-09 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone manufacturing method |
| CN108996466A (en) * | 2017-06-07 | 2018-12-14 | 中芯国际集成电路制造（天津）有限公司 | MEMS device and forming method thereof |
| CN112995869A (en) * | 2021-02-23 | 2021-06-18 | 歌尔微电子股份有限公司 | MEMS chip, manufacturing method thereof, MEMS microphone module and electronic equipment |
| CN112995869B (en) * | 2021-02-23 | 2023-05-30 | 歌尔微电子股份有限公司 | MEMS chip, manufacturing method thereof, MEMS microphone module and electronic equipment |
| CN112678764A (en) * | 2021-03-15 | 2021-04-20 | 山东新港电子科技有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
| CN112678764B (en) * | 2021-03-15 | 2021-07-30 | 山东新港电子科技有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
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