CN103686569A - Capacitive silicon microphone with supporting posts arranged on lower electrodes and preparation method thereof - Google Patents
Capacitive silicon microphone with supporting posts arranged on lower electrodes and preparation method thereof Download PDFInfo
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- CN103686569A CN103686569A CN201310753964.9A CN201310753964A CN103686569A CN 103686569 A CN103686569 A CN 103686569A CN 201310753964 A CN201310753964 A CN 201310753964A CN 103686569 A CN103686569 A CN 103686569A
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Abstract
The invention relates to a capacitive silicon microphone and a preparation method thereof. The capacitive silicon microphone comprises a passivation layer, a medium layer, a device module, an air gap, an air cavity, at least one air hole and a metal layer; the device module is buried in the bottom of the passivation layer and comprises first devices and a second device, and the first devices are lower electrodes of the capacitive silicon microphone; the air gap is used as an insulating medium of the capacitive silicon microphone; the air holes respectively communicate with the air cavity and the air gap; the metal layer is used as the upper electrode of the capacitive silicon microphone and comprises a first part and a second part which are connected with each other, the first part wraps the air gap from the top, and the second part penetrates through the passivation layer to be connected with the second device; the bottom of the medium layer under the lower electrodes is connected with at least one supporting post, and the bottom ends of the supporting posts are fixed in a substrate. The physical strength of the lower electrodes can be enhanced, so that thinner lower electrodes can be prepared, consequently, the sensitivity of the capacitive silicon microphone can be increased, and the phenomenon of lower electrode curving can be prevented in the process of preparation.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, more particularly, relate to a kind of bottom electrode and be provided with capacitance silicon microphone of support column and preparation method thereof.
Background technology
The operation principle of electret microphone is by air, to cause that the vibrations of electret vibration film produce displacement with voice, thereby these two the interelectrode distances of metal level on back electrode and electret are changed, electric capacity also changes thereupon, because the charge number on electret remains constant, by Q=CU, can draw when C changes the voltage U that causes capacitor two ends is changed, thereby output electrical signals, realizes acoustical signal to the conversion of the signal of telecommunication.
The key element of acoustic-electric conversion is electret vibrating membrane.And traditional electret capacitor microphone has approached the limit in volume-diminished, further dwindling of its technology and ceiling structure volume processed, the microphone structure that market in urgent need is new and technology, meet market to the demand on cost, performance, ease for use and design freedom.
At present, MEMS microphone has been widely used in microphone and has manufactured field, it is by manufacturing the microphone of compatible surface (as silicon substrate) processing or Bulk micro machining manufacture with integrated circuit, owing to can utilizing the CMOS technology that continues micro, MEMS microphone can be done very littlely, thereby can be widely applied in the portable equipments such as mobile phone, notebook computer, video camera.The operation principle of MEMS microphone and traditional electret capacitor microphone (ECM) are similar, cause the variation of capacitor voltage at both ends, thereby realize acoustic-electric transfer process by the change of distance between vibrating membrane (top electrode) and substrate (bottom electrode).
Yet, in the capacitance silicon microphone that prior art provides, because of bottom electrode larger from the distance of the substrate of air cavity below, when attempting to make thinner bottom electrode when improving the sensitivity of capacitance silicon microphone, its physical strength is often inadequate, and in preparation technology, when the release aperture release by top electrode is filled in the sacrifice layer in air-gap and air cavity, easily there is crooked phenomenon in thinner bottom electrode.
Therefore, in the industry expectation obtain a kind of can be when obtaining thinner bottom electrode, its physical strength obtains the capacitance silicon microphone promoting.
Summary of the invention
One object of the present invention is to provide a kind of capacitance silicon microphone, and its bottom electrode obtains the lifting of physical strength by being provided with support column.
For achieving the above object, the present invention's one technical scheme is as follows:
A capacitance silicon microphone, is formed on silicon substrate one circuit region, comprising: a passivation layer, and it is circuit region superficial layer; One dielectric layer, is arranged between passivation layer and substrate; One device group, is embedded in passivation layer bottom, and it comprises the first device and the second device, and the first device is the capacitor lower electrode of capacitance silicon microphone; One air-gap, is positioned at passivation layer top, for the dielectric as capacitance silicon microphone; One air cavity, is formed in substrate; And, at least one air vent hole, it connects passivation layer and dielectric layer downwards from the circuit region of not laying device group, respectively with air cavity, air-gap conducting; One metal level, for the electric capacity top electrode as capacitance silicon microphone, comprises interconnective First and second, and First is coated air-gap from top, and second connects passivation layer and be connected with the second device; Wherein, the dielectric layer bottom surface of bottom electrode below is connected with at least one support column, and support column bottom is fixed in substrate.
Preferably, support column is many, is connected in evenly distributedly the dielectric layer bottom surface of bottom electrode below.
Another object of the present invention is to provide a kind of preparation method of capacitance silicon microphone, it can form support column to promote the physical strength of bottom electrode below bottom electrode.
For achieving the above object, another technical scheme of the present invention is as follows:
A method at the above-mentioned capacitance silicon microphone of preparation, comprises the steps: a), provides a silicon substrate, and on substrate, etching forms a plurality of cylindrical holes, and the degree of depth in hole is greater than the air cavity degree of depth of capacitance silicon microphone; B), Xiang Kongzhong fills Si oxide, and forms successively a dielectric layer, a device group and a passivation layer at substrate surface; Wherein, dielectric layer is vertically installed in passivation layer below, and device group is embedded in passivation layer bottom, and it comprises the first device and the second device, and the first device forms the bottom electrode of capacitance silicon microphone; C), with patterning method position of offset bore in circuit region, form at least one air vent hole, air vent hole connects passivation layer and dielectric layer downwards from the circuit region of not laying device group, stops at substrate surface; D), at circuit region, deposit a sacrifice layer, sacrifice layer filling air vent hole uniform fold circuit region surface; E), to sacrifice layer patterning to define air-gap region; F), on air-gap region uniform deposition one metal level, and metal level is connected with the second device, to form the top electrode of capacitance silicon microphone; G), on metal level, form at least one release aperture; H), circuit region is carried out to etching, remove sacrifice layer in air-gap region to form air-gap, and remove the sacrifice layer in air vent hole and be etched in substrate to form air cavity.
Preferably, steps d) specifically comprise: d1), at circuit region, deposit the first sacrifice layer; D2), remove the first sacrifice layer outside air vent hole; D3), at circuit region uniform deposition the second sacrifice layer.
Preferably, steps d 2) specifically comprise: the first sacrifice layer is carried out to CMP technique, during to passivation layer, stop.
Capacitance silicon microphone provided by the invention and preparation method thereof forms a plurality of support columns below bottom electrode, for promoting the physical strength of bottom electrode, thereby can prepare thinner bottom electrode, to improve the sensitivity of capacitance silicon microphone; Meanwhile, in preparation technology, when the release aperture release by top electrode is filled in the sacrifice layer in air-gap and air cavity, can avoid bottom electrode to occur buckling phenomenon, improve product yield.The preparation of this capacitance silicon microphone is simple, it is low to realize cost, is beneficial in semicon industry and applies.
Accompanying drawing explanation
Fig. 1 illustrates the schematic flow sheet of the capacitance silicon microphone manufacturing method that first embodiment of the invention provides;
Fig. 2 A-2G illustrates the device architecture schematic diagram in above-mentioned each step of capacitance silicon microphone manufacturing method of the present invention;
Fig. 3 illustrates the distribution schematic diagram of the support column that the bottom electrode below of the capacitance silicon microphone that second embodiment of the invention provides arranges;
Fig. 4 illustrates the structural representation of the capacitance silicon microphone that third embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
It should be noted that, in an embodiment of the present invention, capacitance silicon microphone device is formed on a circuit region of silicon substrate.
As shown in Figure 1, the capacitance silicon microphone manufacturing method that first embodiment of the invention provides, comprises following each step:
Step S10, provide a silicon substrate 10, on substrate 10, etching forms a plurality of cylindrical holes 100;
Particularly, the degree of depth in hole 100 is greater than the air cavity degree of depth of capacitance silicon microphone; In the situation that considering bottom electrode position and area, the distribution in each hole is made to layout arrangement.Now, device architecture as shown in Figure 2 A.
Step S11, in hole 100, fill Si oxide, and on substrate 10 surfaces, form successively a dielectric layer 101, a device group and a passivation layer 102;
Particularly, dielectric layer 101 is vertically installed in passivation layer 102 belows, device group is embedded in passivation layer 102 bottoms, is positioned at dielectric layer 101 tops, it comprises the first device 1031 and the second device 1032, the first device 1031 forms the bottom electrode of capacitance silicon microphone, the second device 1032 is connected with the top electrode (forming in subsequent technique) of capacitance silicon microphone, thereby upper and lower electrode and air-gap between the two form a plane-parallel capacitor, and form whole silicon microphone circuit together with other partial circuits.Now device architecture as shown in Figure 2 B.
Step S12, with patterning method position of offset bore in circuit region, form at least one air vent hole, air vent hole connects passivation layer and dielectric layer downwards from the circuit region of not laying device group, stops at substrate surface;
In this step, by patterning photoetching, form a plurality of air vent holes 104 that connect dielectric layer 101 and passivation layer 102, for being communicated with air cavity and the air-gap (all forming at subsequent step) of capacitance silicon microphone.The critical size of air vent hole 104 is 6-8um, and the degree of depth is 2.6-3um.Now device architecture as shown in Figure 2 C.
Step S13, at circuit region, deposit a sacrifice layer 105, sacrifice layer 105 is filled air vent holes 104 uniform fold circuit region surface;
Particularly, this step S13 can comprise as follows step by step:
A), at circuit region, deposit the first sacrifice layer;
B), remove the first sacrifice layer outside air vent hole 104;
C), at circuit region uniform deposition the second sacrifice layer.
Wherein, B step by step) can realize in the following way: the first sacrifice layer is carried out to CMP technique, during to passivation layer 102, stop.
Further, the thickness of the first sacrifice layer is 4-4.5um, and material is amorphous silicon or low temperature polycrystalline silicon, and the second sacrificial layer thickness is 2.2um, and material is also amorphous silicon or low temperature polycrystalline silicon.
The sacrifice layer 105 forming in the above described manner, after filling air vent hole 104, can cover the circuit region surface of substrate 10 equably.
Step S14, to sacrifice layer patterning to define air-gap region;
In this step, by patterning photoetching, the sacrifice layer outside this air-gap region is disposed from circuit region surface.Now, device architecture as shown in Figure 2 D.
Step S15, on air-gap region uniform deposition one metal level 106, and metal level 106 is connected with the second device 1032, to form the top electrode of capacitance silicon microphone;
Wherein, metal level 106 is deposited on sacrifice layer 105 tops, covers the upper surface of circuit region, it is from the sacrifice layer 105 in the coated air-gap region of top and side, 106 1 of metal levels are connected with the second device 1032, form the top electrode of capacitance silicon microphone, as the vibrating membrane of capacitance silicon microphone.Now device architecture as shown in Figure 2 E.
Step S16, on metal level 106, form at least one release aperture 1061;
Particularly, one mask can be provided, to comprise the etching material of BCl3, etching sheet metal 106 is to form a plurality of release aperture 1061, release aperture 1061 connects metal level 106, stop at sacrifice layer 105 upper surfaces, for being filled in the sacrificial layer material in air-gap in follow-up preparation technology's volatilization or etching.The critical size of release aperture is for example 3um.Now device architecture as shown in Figure 2 F.
Step S17, circuit region is carried out to etching, remove sacrifice layer 105 in air-gap region to form air-gap 107, and remove the sacrifice layer 105 in air vent hole 104 and be etched in substrate 10 to form air cavity 108.
In this step, adopt isotropic etching material, by release aperture 1061, remove remaining sacrifice layer 105 finally to form air-gap 107, more further downward etched substrate 10 forms air cavitys 108.Now device architecture as shown in Figure 2 G.
Visible, because being filled with Si oxide in cylindrical hole 100, it cannot be by above-mentioned etching material institute etching, thereby formed a plurality of support columns, its top is connected in dielectric layer 101 bottom surfaces of bottom electrode below, and its bottom is connected in the substrate 10 of air cavity 108 belows, to bottom electrode, provide a physical support effect, promote the physical strength of bottom electrode, thereby can prepare thinner bottom electrode, can further improve the sensitivity of capacitance silicon microphone; Meanwhile, in preparation technology, when release aperture 1061 releases by top electrode are filled in the sacrifice layer 105 in air-gap and air cavity, can avoid bottom electrode to occur buckling phenomenon, improve product yield.
The preparation of capacitance silicon microphone that this embodiment provides is simple, it is low to realize cost, is beneficial in semicon industry and applies.
The bottom electrode below of the capacitance silicon microphone that second embodiment of the invention provides is provided with support column, the material of support column is for example silicon dioxide, for providing physical support to promote its physical strength to bottom electrode, support column top is connected in the dielectric layer bottom surface of bottom electrode below, and bottom is connected in the substrate of air cavity below.Its preparation method that can be provided by above-mentioned the first embodiment of the present invention directly obtains.
Particularly, in this embodiment, support column is many, is connected in evenly distributedly the dielectric layer bottom surface of bottom electrode below, thereby can be so that each region of bottom electrode is stressed evenly.For example, support column is 5, be connected to the first, second, third, fourth and fifth position 1001,1002,1003,1004,1005 of the dielectric layer bottom surface of bottom electrode below, wherein, first, second, third, fourth position 1001,1002,1003,1004 lays respectively at four angles of a rectangle, and the 5th position 1005 is positioned at the center of this rectangle, as shown in Figure 3.
The capacitance silicon microphone that third embodiment of the invention provides, comprising: a passivation layer 102, and it is circuit region superficial layer; One dielectric layer 101, is arranged between passivation layer 102 and substrate 10; One device group, is embedded in passivation layer bottom, and it comprises that the first device 1031 and the second device 1032, the first devices 1032 are the capacitor lower electrode of capacitance silicon microphone; One air-gap 107, is positioned at passivation layer 102 tops, for the dielectric as capacitance silicon microphone; One air cavity 108, is formed in substrate 10; And, at least one air vent hole 104, it connects passivation layer 102 and dielectric layer 101 downwards from the circuit region of not laying device group, respectively with air cavity 108, air-gap 107 conductings; One metal level 106, for the electric capacity top electrode as capacitance silicon microphone, comprises interconnective First and second, and from top, 107, the second of coated air-gaps connect passivation layers 102 and are connected with the second device 1032 First.As shown in Figure 4.
Wherein, dielectric layer 101 bottom surfaces of bottom electrode below are connected with at least one support column 100, and support column bottom is fixed in substrate 10.
Further, First metal level comprises an end face and a side, and silicon microphone circuit also comprises a connector 109, the intersection of the coated First metal level end face of connector 109 and side, and extend respectively certain distance to end face center and bottom, side.
The Main Function of connector 109 is that strengthening is as the physical strength of the metal level 106 of vibrating membrane (top electrode).The material of connector 109 can be silicon nitride; Silica; Or silicon oxynitride; Or their composite material.
The capacitance silicon microphone structure that the above-mentioned second and the 3rd embodiment provides, has promoted the physical strength of bottom electrode, thereby can prepare thinner bottom electrode, is conducive to improve the sensitivity of capacitance silicon microphone.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. a capacitance silicon microphone, is formed on silicon substrate one circuit region, comprising:
One passivation layer, it is described circuit region superficial layer;
One dielectric layer, is arranged between described passivation layer and described substrate;
One device group, is embedded in described passivation layer bottom, and it comprises the first device and the second device, and described the first device is the capacitor lower electrode of described capacitance silicon microphone;
One air-gap, is positioned at described passivation layer top, for the dielectric as described capacitance silicon microphone;
One air cavity, is formed in described substrate; And,
At least one air vent hole, it connects described passivation layer and described dielectric layer downwards from the circuit region of not laying described device group, respectively with described air cavity, described air-gap conducting;
One metal level, for the electric capacity top electrode as described capacitance silicon microphone, comprises interconnective First and second, and described First is coated described air-gap from top, and described second connects described passivation layer and be connected with described the second device;
Wherein, the dielectric layer bottom surface of described bottom electrode below is connected with at least one support column, and described support column bottom is fixed in described substrate.
2. capacitance silicon microphone as claimed in claim 1, is characterized in that, described support column is many, is connected in evenly distributedly the dielectric layer bottom surface of described bottom electrode below.
3. capacitance silicon microphone as claimed in claim 2, it is characterized in that, described support column is 5, be connected to the first, second, third, fourth and fifth position of the dielectric layer bottom surface of described bottom electrode below, wherein, described first, second, third, fourth position lays respectively at four angles of a rectangle, and described the 5th position is positioned at the center of described rectangle.
4. capacitance silicon microphone as claimed any one in claims 1 to 3, it is characterized in that, described First metal level comprises an end face and a side, described silicon microphone circuit also comprises a connector, the intersection of the coated described end face of described connector and side, and to described end face center, bottom, described side extends respectively certain distance.
5. prepare a method for capacitance silicon microphone as claimed in claim 1, comprise the steps:
A), a silicon substrate is provided, on described substrate, etching forms a plurality of cylindrical holes, the degree of depth in described hole is greater than the air cavity degree of depth of described capacitance silicon microphone;
B), in described hole, fill Si oxide, and form successively a dielectric layer, a device group and a passivation layer at described substrate surface; Wherein, described dielectric layer is vertically installed in described passivation layer below, and described device group is embedded in described passivation layer bottom, and it comprises the first device and the second device, and described the first device forms the capacitor lower electrode of described capacitance silicon microphone;
C), the position of departing from described hole with patterning method in described circuit region forms at least one air vent hole, described air vent hole connects described passivation layer and described dielectric layer downwards from the circuit region of not laying described device group, stops at described substrate surface;
D), at described circuit region, deposit a sacrifice layer, described sacrifice layer is filled circuit region surface described in described air vent hole uniform fold;
E), to described sacrifice layer patterning to define air-gap region;
F), on described air-gap region uniform deposition one metal level, and described metal level is connected with described the second device, to form electric capacity second utmost point of described capacitance silicon microphone;
G), on described metal level, form at least one release aperture;
H), described circuit region is carried out to etching, remove sacrifice layer in described air-gap region to form described air-gap, and remove the sacrifice layer in described air vent hole and be etched in described substrate to form described air cavity.
6. method as claimed in claim 5, is characterized in that, described steps d) specifically comprise:
D1), at described circuit region, deposit the first sacrifice layer;
D2), remove described the first sacrifice layer outside described air vent hole;
D3), at described circuit region uniform deposition the second sacrifice layer.
7. method as claimed in claim 6, is characterized in that, described steps d 2) specifically comprise: described the first sacrifice layer is carried out to CMP technique, during to described passivation layer, stop.
8. method as claimed in claim 6, is characterized in that, the thickness of described the first sacrifice layer is 4-4.5um, and material is amorphous silicon or low temperature polycrystalline silicon, and described the second sacrificial layer thickness is 2.2um, and material is amorphous silicon or low temperature polycrystalline silicon.
9. method as claimed in claim 5, is characterized in that, described step c) in, the critical size of described air vent hole is 6-8um, the degree of depth is 2.6-3um.
10. method as claimed in claim 5, is characterized in that, described step g) in, the critical size of described release aperture is 3um.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105871249A (en) * | 2015-01-19 | 2016-08-17 | 北京纳米能源与系统研究所 | Acoustic-electric conversion component, and charging device and sound signal gatherer using acoustic-electric conversion component |
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| US20120139066A1 (en) * | 2010-12-03 | 2012-06-07 | Electronics And Telecommunications Research Institute | Mems microphone |
| CN103369452A (en) * | 2013-07-23 | 2013-10-23 | 上海集成电路研发中心有限公司 | Preparation method of capacitive-type silicon microphone |
| CN103402162A (en) * | 2013-07-23 | 2013-11-20 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone provided with vibrating membrane with concave-convex structure, and preparation method thereof |
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2013
- 2013-12-31 CN CN201310753964.9A patent/CN103686569A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100158281A1 (en) * | 2008-12-22 | 2010-06-24 | Electronics And Telecommunications Research Institute | Micro-electromechanical systems (mems) microphone and method of manufacturing the same |
| US20120139066A1 (en) * | 2010-12-03 | 2012-06-07 | Electronics And Telecommunications Research Institute | Mems microphone |
| CN103369452A (en) * | 2013-07-23 | 2013-10-23 | 上海集成电路研发中心有限公司 | Preparation method of capacitive-type silicon microphone |
| CN103402162A (en) * | 2013-07-23 | 2013-11-20 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone provided with vibrating membrane with concave-convex structure, and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105871249A (en) * | 2015-01-19 | 2016-08-17 | 北京纳米能源与系统研究所 | Acoustic-electric conversion component, and charging device and sound signal gatherer using acoustic-electric conversion component |
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